AU2020305426A1 - Double-sided coupling photovoltaic cell system based on reflection and condensation - Google Patents
Double-sided coupling photovoltaic cell system based on reflection and condensation Download PDFInfo
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- 230000008878 coupling Effects 0.000 title abstract description 5
- 238000010168 coupling process Methods 0.000 title abstract description 5
- 238000005859 coupling reaction Methods 0.000 title abstract description 5
- 230000005494 condensation Effects 0.000 title abstract 2
- 238000009833 condensation Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 230000006872 improvement Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K30/80—Constructional details
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- H10K30/81—Electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Photovoltaic Devices (AREA)
Abstract
Disclosed in the present invention is a double-sided coupling photovoltaic cell system based on reflection and condensation, which is composed of one or more structural units. Each structural unit consists of a double-sided photovoltaic cell and two reflection-type photovoltaic cells; the two reflection-type photovoltaic cells are respectively positioned on two sides of the double-sided photovoltaic cell; light receiving surfaces of the reflection-type photovoltaic cells face the double-sided photovoltaic cell; an included angle is formed between each reflection-type photovoltaic cell and the double-sided photovoltaic cell, so that incident light can irradiate the two surfaces of the double-sided photovoltaic cell after being reflected by the reflection-type photovoltaic cells. The present invention solves the problem of performance attenuation of a narrow band gap cell caused by reduced carrier concentration in a conventional multi-band gap photovoltaic cell combination, can more effectively utilize sunlight of different wave bands, fully exerts the performance of a multi-band gap photovoltaic cell system, and improves the photoelectric conversion efficiency. The battery system is simple in structure and easy to achieve.
Description
Technical Field The invention belongs to the field of semiconductor devices, and in particular relates to a double-sided coupled photovoltaic cell system based on reflective concentrating. Background
As a device that can convert solar radiation energy into electrical energy, photovoltaic cells have
the advantages such as safety, environmental protection, less restriction by regional factors, etc.
Since the development of the photovoltaic cell industry, various photovoltaic utilization devices
such as crystalline silicon cells, gallium arsenide cells, CIGS cells, cadmium telluride cells,
dye-sensitized solar cells, perovskite solar cells, etc. have emerged. Various cells play their
respective roles due to the differences in their manufacturing processes and application bands.
After a long period of development, the efficiency of photovoltaic cells with a single forbidden
band value has been greatly improved, and the efficiency of photovoltaic cells has gradually
approached the limit efficiency of photovoltaic cells with a single forbidden band value.
However, a cell with a single forbidden band value has a high utilization rate for photons near
the forbidden band value and a low utilization rate for photons far away from the forbidden band
value. Taking a silicon cell as an example, the forbidden band value of the silicon cell is about
1.leV, and the silicon cell can utilize sunlight in the waveband range of 300nm-1100nm, but the
silicon cell has a relatively low utilization rate for short waveband photons, thus leading to the
wasting of some energy and limiting the improvement of photoelectric conversion efficiency.
The coupling of multi-bandgap photovoltaic cells can make use of the response of each sub-cell
to different wavebands, so that incident sunlight can be efficiently utilized in each waveband,
thereby improving the photoelectric conversion efficiency.
At present, the coupling between multi-bandgap photovoltaic cells is mostly in the form of
stacking up and down; that is, the sunlight that is not absorbed by the wide bandgap photovoltaic
cell located in the upper layer is transmitted into the narrow bandgap photovoltaic cell located in
the lower layer so as to achieve subband utilization. However, this form of combination makes
the system unable to utilize the sunlight reflected from the surface of the wide bandgap photovoltaic cell in the upper layer, resulting in a waste of energy and limiting the improvement of system efficiency. In addition, the narrow bandgap photovoltaic cell in the lower layer only absorbs part of the energy, resulting in a decrease in the carrier concentration, which will cause the degradation of the performance of the narrow bandgap photovoltaic cell in the lower layer to a certain extent, and cannot fully utilize the advantages of the multi-bandgap coupled cells.
Summary
In order to utilize sunlight more efficiently, the objective of the invention is to provide a
double-sided coupled photovoltaic cell system based on reflective concentrating and achieve the
photoelectric conversion efficiency of efficient multi-bandgap photovoltaic cells.
In order to achieve the above objective, the technical scheme adopted by the invention is as
follows:
A double-sided coupled photovoltaic cell system based on reflective concentrating, wherein the
photovoltaic cell system includes one or more structural units; each structural unit includes a
double-sided photovoltaic cell and two reflective photovoltaic cells; the two reflective
photovoltaic cells are located on both sides of the double-sided photovoltaic cell, respectively;
the illuminated face of the reflective photovoltaic cell faces the double-sided photovoltaic cell,
and there is an included angle between the reflective photovoltaic cell and the double-sided
photovoltaic cell, so that an incident light can irradiate the two sides of the double-sided
photovoltaic cell after being reflected by the reflective photovoltaic cell.
Further, the included angle between the reflective photovoltaic cell and the double-sided
photovoltaic cell is any angle greater than 0° and less than 90.
Further, the included angles between the two reflective photovoltaic cells and the double-sided
photovoltaic cell are the included angle A and the included angle B respectively, and the included
angle A and the included angle B are the same or different.
Further, the double-sided photovoltaic cell is a cell with double-sided light-receiving and
power-generating capability.
Further, the two sides of the double-sided photovoltaic cell share the same semiconductor active
layer when receiving light and generating electricity.
Further, the reflective photovoltaic cell is a cell with at least one-sided light-receiving and
power-generating capability.
Further, the reflective photovoltaic cell is a cell that uses one or more metal electrodes or
high-reflecting films for spectral reflection.
Further, the forbidden bandwidth of the semiconductor active layer of the double-sided
photovoltaic cell is smaller than that of the reflective photovoltaic cell.
The beneficial effects: the cell system of the invention solves the performance degradation of a
narrow bandgap cell due to the reduction of carrier concentration in a traditional multi-bandgap
photovoltaic cell module, and can utilize different wavelengths of sunlight more efficiently, give
full play to the performance of a multi-bandgap photovoltaic cell system, and improve
photoelectric conversion efficiency. In addition, the cell system has a simple structure and is
easily realized.
Brief Description of the Drawings
Figure 1 is the schematic diagram of a structural unit of the invention;
Figure 2 is the structure diagram of a double-sided photovoltaic cell selected in the invention;
Figure 3 is the structure diagram of a reflective photovoltaic cell selected in the invention;
Figure 4 is the reflectance spectrum of a perovskite solar cell of the invention in the system;
Figure 5 is the I-V curve of the double-sided photovoltaic cell selected in the invention under
different incident conditions;
Figure 6 is the I-V curve of each cell in the operation of the cell system implemented by the
invention;
In the figure, 1-double-sided photovoltaic cell, 2-reflective photovoltaic cell.
Detailed Description
According to the drawings, the invention is further described as follows:
The invention relates to a double-side coupled photovoltaic cell system based on reflective
concentrating, wherein the photovoltaic cell system includes one or more structural units; Figure
1 is a structural unit; each structural unit includes a double-sided photovoltaic cell 1 and two
reflective photovoltaic cells 2; the two reflective photovoltaic cells 2 are located on both sides of
the double-sided photovoltaic cell 1, respectively; the illuminated face of the reflective
photovoltaic cell 2 faces the double-sided photovoltaic cell 1, and there is an included angle
between the reflective photovoltaic cell 2 and the double-sided photovoltaic cell 1, which is
respectively the included angle A and the included angle B, so that an incident light can irradiate the two sides of the double-sided photovoltaic cell 1 after being reflected by the reflective photovoltaic cell 2. The included angle between the reflective photovoltaic cell 2 and the double-sided photovoltaic cell 1 is any angle greater than 0° and less than 90. The included angles between the two reflective photovoltaic cells 2 and the double-sided photovoltaic cell 1 are the included angle A and the included angle B respectively, and the included angle A and the included angle B are mutually independent and can be the same or different. The double-sided photovoltaic cell 1 is a cell with double-sided light-receiving and power-generating capability; the two sides of the double-sided photovoltaic cell 1 share the same semiconductor active layer when receiving light and generating electricity. The reflective photovoltaic cell 2 is a cell with at least one-sided light-receiving and power-generating capability; the reflective photovoltaic cell 2 is a cell that uses one or more metal electrodes or high-reflecting films for spectral reflection. The forbidden bandwidth of the semiconductor active layer of the double-sided photovoltaic cell 1 is smaller than that of the reflective photovoltaic cell 2. Embodiment: The double-sided photovoltaic cell 1 uses a double-sided silicon-based heterojunction cell in the double-sided coupled photovoltaic cell system based on reflective concentrating of this embodiment; as shown in Figure 2, the cell has a double-sided pyramid textured structure, and uses intrinsic amorphous silicon as a passivation layer i, p-a-Si:H as a hole selection layer p, n-a-Si:H as an electron selection layer n, indium tin oxide (ITO) material as a transparent electrode TE, and Ag material as a metal gate line electrode. The reflective photovoltaic cell 2 uses a perovskite solar cell; as shown in Figure 3, the cell uses W-doped indium oxide (IWO) material as a transparent conductive oxide layer TCO, SnO 2 material as an electron transport layer ETL, FACsPbIBr material as a perovskite layer PSK, 2,2',7,7'-tetra[N,N-bis (4-methoxyphenyl) amino]-9,9'-spirobifluorene (Spiro-OMeTAD) material as a hole transport layer HTL, and Au as a metal electrode M. In this embodiment, both the included angle A and the included angle B between the two reflective photovoltaic cells 2 and the double-sided photovoltaic cell 1 are preferably 45°. The reflectance curve of the perovskite cell using IWO and commercial conductive oxide respectively as the transparent electrode under the conditions of this embodiment is shown in
Figure 4. The use of IWO material as a transparent conductive oxide in the invention can greatly
increase the reflectivity of the perovskite cell in the infrared band (750~1200nm) (from 63.4% to
80.5%), and can provide more energy to the silicon cell. The I-V characteristic curve of the
silicon cell reflected by the perovskite cell under different incident conditions is shown in Figure
5. When both sides are irradiated by reflected light at the same time, the open circuit voltage of
the double-sided silicon-based heterojunction cell has been effectively increased, so that the
efficiency has increased from the average of 7.85% on both sides to 8.67%. When the system
works, the efficiency of the perovskite cell is 16.81%, the efficiency of the double-sided
silicon-based heterojunction cell is 8.67%, and the total efficiency of the system is 25.48%.
Compared with a double-sided silicon-based heterojunction cell working alone (efficiency
21.1%), the efficiency has been increased by 4.38%.
The result indicates that the perovskite/silicon-based heterojunction cell system based on
reflection coupling proposed by the invention can not only avoid the reflection loss of sunlight,
but also make full use of the advantages of the double-sided silicon-based heterojunction cell so
as to improve photoelectric conversion efficiency.
The above description is only a preferred embodiment of the invention. It should be pointed out
that as far as general technicians in this technical field are concerned, they may implement some
improvements and modifications on the premise of following the principle of this invention;
however, such improvements and modifications shall be deemed to be within the coverage of
protection of the invention.
Claims (8)
1. A double-sided coupled photovoltaic cell system based on reflective concentrating, wherein the photovoltaic cell system comprises one or more structural units; each structural unit includes a double-sided photovoltaic cell (1) and two reflective photovoltaic cells (2); the two reflective photovoltaic cells (2) are located on both sides of the double-sided photovoltaic cell (1), respectively; the illuminated face of the reflective photovoltaic cell (2) faces the double-sided photovoltaic cell (1), and there is an included angle between the reflective photovoltaic cell (2) and the double-sided photovoltaic cell (1), so that an incident light can irradiate the two sides of the double-sided photovoltaic cell (1) after being reflected by the reflective photovoltaic cell (2).
2. The double-sided coupled photovoltaic cell system based on reflective concentrating according to claim 1, wherein the included angle between the reflective photovoltaic cell (2) and the double-sided photovoltaic cell (1) is any angle greater than 0° and less than 90.
3. The double-sided coupled photovoltaic cell system based on reflective concentrating according to claim 1 or 2, wherein the included angles between the two reflective photovoltaic cells (2) and the double-sided photovoltaic cell (1) are the included angle A and the included angle B respectively, and the included angle A and the included angle B are the same or different.
4. The double-sided coupled photovoltaic cell system based on reflective concentrating according to claim 1, wherein the double-sided photovoltaic cell (1) is a cell with double-sided light-receiving and power-generating capability.
5. The double-sided coupled photovoltaic cell system based on reflective concentrating according to claim 1 or 4, wherein the two sides of the double-sided photovoltaic cell (1) share the same semiconductor active layer when receiving light and generating electricity.
6. The double-sided coupled photovoltaic cell system based on reflective concentrating according to claim 1, wherein the reflective photovoltaic cell (2) is a cell with at least one-sided light-receiving and power-generating capability.
7. The double-sided coupled photovoltaic cell system based on reflective concentrating according to claim 1 or 6, wherein the reflective photovoltaic cell (2) is a cell that uses one or more metal electrodes or high-reflecting films for spectral reflection.
8. The double-sided coupled photovoltaic cell system based on reflective concentrating according to claim 1, wherein the forbidden bandwidth of the semiconductor active layer of the double-sided photovoltaic cell (1) is smaller than that of the reflective photovoltaic cell (2).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910558571.XA CN110335909B (en) | 2019-06-26 | 2019-06-26 | Two-sided coupling photovoltaic battery system based on reflection spotlight |
| CN201910558571.X | 2019-06-26 | ||
| PCT/CN2020/084108 WO2020258989A1 (en) | 2019-06-26 | 2020-04-10 | Double-sided coupling photovoltaic cell system based on reflection and condensation |
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| Publication Number | Publication Date |
|---|---|
| AU2020305426A1 true AU2020305426A1 (en) | 2021-08-19 |
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| AU2020305426A Abandoned AU2020305426A1 (en) | 2019-06-26 | 2020-04-10 | Double-sided coupling photovoltaic cell system based on reflection and condensation |
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| Country | Link |
|---|---|
| CN (1) | CN110335909B (en) |
| AU (1) | AU2020305426A1 (en) |
| WO (1) | WO2020258989A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335909B (en) * | 2019-06-26 | 2021-09-17 | 南京航空航天大学 | Two-sided coupling photovoltaic battery system based on reflection spotlight |
| WO2022061729A1 (en) * | 2020-09-25 | 2022-03-31 | 博立多媒体控股有限公司 | Solar energy utilization device |
| CN113098385A (en) * | 2021-04-29 | 2021-07-09 | 华能陕西发电有限公司 | Photovoltaic module with reflecting device |
| CN113162543A (en) * | 2021-04-29 | 2021-07-23 | 华能陕西发电有限公司 | Photovoltaic power generation system with selective reflection film |
| CN115172503A (en) * | 2022-06-29 | 2022-10-11 | 中国华能集团清洁能源技术研究院有限公司 | Included sub-cell assembly and photovoltaic cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201117666Y (en) * | 2007-10-24 | 2008-09-17 | 陈祖培 | Light gathering solar cell assembly |
| CN201570506U (en) * | 2009-11-20 | 2010-09-01 | 江苏华创光电科技有限公司 | Solar battery high-efficiency light receiving device |
| CN101872063A (en) * | 2010-06-01 | 2010-10-27 | 黄建文 | Conical concentrating system |
| CN102437208B (en) * | 2011-12-08 | 2013-11-20 | 上海太阳能电池研究与发展中心 | Mechanically assembled solar cell |
| CN102610601A (en) * | 2012-03-31 | 2012-07-25 | 上海太阳能电池研究与发展中心 | Combined solar battery capable of improving solar energy utilization rate |
| CN202633344U (en) * | 2012-04-13 | 2012-12-26 | 上海太阳能电池研究与发展中心 | Wide spectrum absorption mechanical assembly solar energy cell |
| CN205508846U (en) * | 2016-04-08 | 2016-08-24 | 合肥中南光电有限公司 | Two -sided spotlight photovoltaic structure |
| CN106847981B (en) * | 2017-03-10 | 2018-01-23 | 西藏大学 | A kind of foldable rectangular pyramid formula reflecting condensation solar cell array |
| CN110335909B (en) * | 2019-06-26 | 2021-09-17 | 南京航空航天大学 | Two-sided coupling photovoltaic battery system based on reflection spotlight |
-
2019
- 2019-06-26 CN CN201910558571.XA patent/CN110335909B/en active Active
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2020
- 2020-04-10 WO PCT/CN2020/084108 patent/WO2020258989A1/en active Application Filing
- 2020-04-10 AU AU2020305426A patent/AU2020305426A1/en not_active Abandoned
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| Publication number | Publication date |
|---|---|
| CN110335909B (en) | 2021-09-17 |
| CN110335909A (en) | 2019-10-15 |
| WO2020258989A1 (en) | 2020-12-30 |
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