CN104900761A - Crystalline silicon solar cell production process - Google Patents
Crystalline silicon solar cell production process Download PDFInfo
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- CN104900761A CN104900761A CN201510287576.5A CN201510287576A CN104900761A CN 104900761 A CN104900761 A CN 104900761A CN 201510287576 A CN201510287576 A CN 201510287576A CN 104900761 A CN104900761 A CN 104900761A
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- Prior art keywords
- silicon chip
- silicon solar
- solar cell
- production process
- crystalline silicon
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 238000003860 storage Methods 0.000 claims abstract 2
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract 2
- 238000012856 packing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a crystalline silicon solar cell production process. The crystalline silicon solar cell production process comprises the following steps of: (1) cleaning and texturizing; (2) diffusion and etching; (3) detection; (4) antireflection film deposition; (5) printing and sintering; (6) detection and sorting; and (7) packing and storage. In order to guarantee the consistency of product quality, each cell sheet is tested, and the cell sheets are classified according to the magnitude of current and power, and the cell sheets can be also classified according to cell efficiency; silicon wafers are subjected to centrifuge dripping under a vacuum condition; and the temperature of diffusion equipment ranges from 800 to 900 DEG C. The crystalline silicon solar cell production process is advantageous in simple and reasonable technique procedures. With the crystalline silicon solar cell production process adopted, product quality and yield can be effectively improved, and resources can be saved, and requirement for materials for producing solar cells can be lowered, and short-circuit current and open-circuit voltage of the cells can be improved.
Description
Technical field
The present invention relates to a kind of crystal silicon solar energy battery production technology, belongs to technical field of solar cell manufacturing.
Background technology
Solar energy is the inexhaustible regenerative resources of the mankind, is also clean energy resource, does not produce any environmental pollution.In the middle of effective utilization of solar energy; Large sun can solar photovoltaic utilization be research field with fastest developing speed in the last few years, most active, is one of project wherein attracted most attention.For this reason, people Study and Development solar cell.Make solar cell mainly based on semi-conducting material, its operation principle photoelectricity occurs in conversion reaction, according to the difference of material therefor after utilizing photoelectric material to absorb luminous energy.
The height of conversion efficiency of solar cell is the important indicator of evaluation one piece of solar cell.And the height of conversion efficiency of solar cell is not only relevant with the material of solar cell, structure, also has important contacting with the production technology of solar cell.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of crystal silicon solar energy battery production technology, and its technological process is simple, rationally, production efficiency is high, effectively can improve conversion efficiency of solar cell.
Technical problem to be solved by this invention is taked following technical scheme to realize:
A kind of crystal silicon solar energy battery production technology, it comprises following step:
(1) cleaning, making herbs into wool: with chemical bases or acid corrosion silicon chip, to remove silicon chip surface mechanical damage layer, and carry out silicon chip surface texturing, forms the matte of pyramid structure thus reduces light reflection;
(2) spread, etching: first use centrigugal swing dryer to dry the silicon chip after cleaning, then the silicon chip after drying be placed on diffusion facilities and spread, finally with corrosion phosphorosilicate glass and plasma etching edge current path;
(3) detect: the silicon chip after diffusion, etching is detected, sees and whether meet technological requirement, pick out substandard product;
(4) antireflective coating deposition: using plasma enhanced chemical vapor deposition technology deposits one deck silicon nitride anti-reflecting film at battery surface, not only can reduce the reflection of light, and have a large amount of hydrogen atoms to enter, therefore also serve the effect of good surface passivation and body passivation;
(5) print, sintering: in order to obtain electric current from battery, generally battery just, the back of the body two sides make electrode.The form of front grid electrode and thickness requirement will have high transmitance on the one hand, will ensure that grid electrode has an alap contact resistance on the other hand.BSF structure is made at the back side, to reduce surface electronic compound, will carry out high temperature sintering after printing;
(6) grouping system: in order to ensure the consistency of product quality, to each cell slice test, and will classify by electric current and watt level usually, also can carry out classification according to battery efficiency;
(7) packaging warehouse-in: a well-graded cell piece part can be packed, warehouse-in.
Above-mentioned steps carries out centrifuge dripping to silicon chip in (2), carries out under vacuum.
In above-mentioned steps (2), diffusion facilities working temperature is 800-900 DEG C.
The invention has the beneficial effects as follows: present invention process flow process is simple, reasonable, effectively can improve the quality of products and rate of finished products, economize on resources; Reducing the requirement to making solar cell material, improve battery short circuit electric current and open circuit voltage.
Accompanying drawing explanation
Fig. 1 is present invention process flow chart.
Embodiment
In order to technological means of the present invention, creation characteristic, reach object and effect is easy to understand, below in conjunction with concrete diagram, set forth the present invention further.
As shown in Figure 1, a kind of crystal silicon solar energy battery production technology, it comprises following step:
(1) cleaning, making herbs into wool: with chemical bases or acid corrosion silicon chip, to remove silicon chip surface mechanical damage layer, and carry out silicon chip surface texturing, forms the matte of pyramid structure thus reduces light reflection;
(2) spread, etching: first use centrigugal swing dryer to dry the silicon chip after cleaning, then the silicon chip after drying be placed on diffusion facilities and spread, finally with corrosion phosphorosilicate glass and plasma etching edge current path;
(3) detect: the silicon chip after diffusion, etching is detected, sees and whether meet technological requirement, pick out substandard product;
(4) antireflective coating deposition: using plasma enhanced chemical vapor deposition technology deposits one deck silicon nitride anti-reflecting film at battery surface, not only can reduce the reflection of light, and have a large amount of hydrogen atoms to enter, therefore also serve the effect of good surface passivation and body passivation;
(5) print, sintering: in order to obtain electric current from battery, generally battery just, the back of the body two sides make electrode.The form of front grid electrode and thickness requirement will have high transmitance on the one hand, will ensure that grid electrode has an alap contact resistance on the other hand.BSF structure is made at the back side, to reduce surface electronic compound, will carry out high temperature sintering after printing;
(6) grouping system: in order to ensure the consistency of product quality, to each cell slice test, and will classify by electric current and watt level usually, also can carry out classification according to battery efficiency;
(7) packaging warehouse-in: a well-graded cell piece part can be packed, warehouse-in.
Above-mentioned steps carries out centrifuge dripping to silicon chip in (2), carries out under vacuum.
In above-mentioned steps (2), diffusion facilities working temperature is 800-900 DEG C.
Present invention process flow process is simple, reasonable, effectively can improve the quality of products and rate of finished products, economize on resources; Reducing the requirement to making solar cell material, improve battery short circuit electric current and open circuit voltage.
More than show and describe general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand, and the present invention is not restricted to the described embodiments, and without departing from the spirit and scope of the present invention, the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.Application claims protection range is defined by appending claims and equivalent thereof.
Claims (3)
1. a crystal silicon solar energy battery production technology, is characterized in that: it comprises following step:
(1) cleaning, making herbs into wool: with chemical bases or acid corrosion silicon chip, to remove silicon chip surface mechanical damage layer, and carry out silicon chip surface texturing, forms the matte of pyramid structure thus reduces light reflection;
(2) spread, etching: first use centrigugal swing dryer to dry the silicon chip after cleaning, then the silicon chip after drying be placed on diffusion facilities and spread, finally with corrosion phosphorosilicate glass and plasma etching edge current path;
(3) detect: the silicon chip after diffusion, etching is detected, sees and whether meet technological requirement, pick out substandard product;
(4) antireflective coating deposition: using plasma enhanced chemical vapor deposition technology deposits one deck silicon nitride anti-reflecting film at battery surface, not only can reduce the reflection of light, and have a large amount of hydrogen atoms to enter, therefore also serve the effect of good surface passivation and body passivation;
(5) print, sinter: in order to obtain electric current from battery, generally battery just, back of the body two sides makes electrode, the form of front grid electrode and thickness requirement will have high transmitance on the one hand, to ensure that grid electrode has an alap contact resistance on the other hand, BSF structure is made at the back side, to reduce surface electronic compound, after printing, high temperature sintering will be carried out;
(6) grouping system: in order to ensure the consistency of product quality, to each cell slice test, and will classify by electric current and watt level usually, also can carry out classification according to battery efficiency;
(7) packaging warehouse-in: a well-graded cell piece part can be carried out pack, put in storage.
2. a kind of crystal silicon solar energy battery production technology according to claim 1, is characterized in that: described step carries out centrifuge dripping to silicon chip in (2), carries out under vacuum.
3. a kind of crystal silicon solar energy battery production technology according to claim 1, is characterized in that: in described step (2), diffusion facilities working temperature is 800-900 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510287576.5A CN104900761A (en) | 2015-05-29 | 2015-05-29 | Crystalline silicon solar cell production process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510287576.5A CN104900761A (en) | 2015-05-29 | 2015-05-29 | Crystalline silicon solar cell production process |
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| Publication Number | Publication Date |
|---|---|
| CN104900761A true CN104900761A (en) | 2015-09-09 |
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Family Applications (1)
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|---|---|---|---|
| CN201510287576.5A Pending CN104900761A (en) | 2015-05-29 | 2015-05-29 | Crystalline silicon solar cell production process |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720122A (en) * | 2016-02-18 | 2016-06-29 | 安徽旭能光伏电力有限公司 | Production process of double-sided glass silicon-crystal solar cell |
| CN108321220A (en) * | 2017-12-28 | 2018-07-24 | 江苏浠吉尔装备科技有限公司 | A kind of monocrystalline making herbs into wool cleaning |
| CN109411556A (en) * | 2018-08-31 | 2019-03-01 | 湖南红太阳光电科技有限公司 | A method of reducing black silion cell component package power loss |
| CN109616549A (en) * | 2018-11-15 | 2019-04-12 | 浙江艾能聚光伏科技股份有限公司 | A kind of preparation method of solar battery sheet |
| CN114843369A (en) * | 2022-04-28 | 2022-08-02 | 晶科能源(海宁)有限公司 | Monitoring method of solar cell preparation process |
| CN116014023A (en) * | 2022-10-27 | 2023-04-25 | 通威太阳能（安徽）有限公司 | Preparation method and preparation system of solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683483A (en) * | 2012-04-11 | 2012-09-19 | 北京吉阳技术股份有限公司 | Method for removing dead layer of crystalline silicon solar battery |
| CN102969402A (en) * | 2012-12-12 | 2013-03-13 | 泰州德通电气有限公司 | Preparation process of shallow junction solar battery |
| CN103165754A (en) * | 2013-03-25 | 2013-06-19 | 泰通(泰州)工业有限公司 | Preparation process for solar cell resisting potential induced degradation |
| CN103594558A (en) * | 2013-11-19 | 2014-02-19 | 金陵科技学院 | Preparation method of efficient solar cell |
-
2015
- 2015-05-29 CN CN201510287576.5A patent/CN104900761A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683483A (en) * | 2012-04-11 | 2012-09-19 | 北京吉阳技术股份有限公司 | Method for removing dead layer of crystalline silicon solar battery |
| CN102969402A (en) * | 2012-12-12 | 2013-03-13 | 泰州德通电气有限公司 | Preparation process of shallow junction solar battery |
| CN103165754A (en) * | 2013-03-25 | 2013-06-19 | 泰通(泰州)工业有限公司 | Preparation process for solar cell resisting potential induced degradation |
| CN103594558A (en) * | 2013-11-19 | 2014-02-19 | 金陵科技学院 | Preparation method of efficient solar cell |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720122A (en) * | 2016-02-18 | 2016-06-29 | 安徽旭能光伏电力有限公司 | Production process of double-sided glass silicon-crystal solar cell |
| CN108321220A (en) * | 2017-12-28 | 2018-07-24 | 江苏浠吉尔装备科技有限公司 | A kind of monocrystalline making herbs into wool cleaning |
| CN109411556A (en) * | 2018-08-31 | 2019-03-01 | 湖南红太阳光电科技有限公司 | A method of reducing black silion cell component package power loss |
| CN109411556B (en) * | 2018-08-31 | 2021-11-26 | 湖南红太阳光电科技有限公司 | Method for reducing packaging power loss of black silicon battery pack |
| CN109616549A (en) * | 2018-11-15 | 2019-04-12 | 浙江艾能聚光伏科技股份有限公司 | A kind of preparation method of solar battery sheet |
| CN114843369A (en) * | 2022-04-28 | 2022-08-02 | 晶科能源(海宁)有限公司 | Monitoring method of solar cell preparation process |
| CN116014023A (en) * | 2022-10-27 | 2023-04-25 | 通威太阳能（安徽）有限公司 | Preparation method and preparation system of solar cell |
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Application publication date: 20150909 |