CN105702754B - ITO aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode - Google Patents
ITO aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode Download PDFInfo
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- CN105702754B CN105702754B CN201610057404.3A CN201610057404A CN105702754B CN 105702754 B CN105702754 B CN 105702754B CN 201610057404 A CN201610057404 A CN 201610057404A CN 105702754 B CN105702754 B CN 105702754B
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- bottom electrode
- solar cell
- ito
- preparation
- gallium arsenide
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 14
- 238000001704 evaporation Methods 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 229910005703 Ge—Ag Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010026 decatizing Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides the preparation method that a kind of ITO aids in slim multi-junction gallium arsenide solar cell bottom electrode, belongs to solar cell preparing technical field.Preparation method of the present invention, including the step such as gluing, cleaning, evaporation metal grid line, evaporation ito film layer.The present invention is applied to the II-VI group solar cell of large scale III V that thickness reaches less than 145 μm, bottom electrode is combined as using metal grid lines and ito film layer, the bottom electrode metal area coverage of battery is reduced, efficiently solves the warpage issues of thin battery, reduces the weight of battery.
Description
Technical field
The present invention relates to the preparing technical field of solar cell, more particularly to a kind of ITO to aid in slim multi-junction gallium arsenide
The preparation method of solar cell bottom electrode.
Background technology
Three-junction gallium arsenide solar battery has the characteristics that high conversion efficiency, radiation resistance be good, hot operation efficiency high, is
The efficiency highest solar cell used in current domestic aerospace engineering.Due to three-junction gallium arsenide solar cell and as generation
The II-VI group solar cell of more knots III-V of table is in series by multiple P-N junctions, and epitaxial structure is complicated, therefore such solar energy
Cell thickness is larger.In order to mitigate the weight of unit area battery, the carrying capacity of satellite is improved, before battery performance is not influenceed
Put, the substrate of such battery is thinned.
In order to further improve pieces of cloth rate, meet higher power demand, reduce the workload of follow-up welding assembly, space flight
Inexorable trend is also turned into as generator unit using large area three-junction gallium arsenide solar battery in engineering.
However, for being thinned to, thickness is no more than 145 μm and area is more than 30cm at present2Three-junction gallium arsenide battery or
As the II-VI group solar cell of more knots III-V of representative, the preparation of its bottom electrode uses pressure decatizing depositing process more, obtained all standing
The phenomenon of warpage occurs after bottom electrode, influences the assembling of sun battle array.
The content of the invention
The problem to be solved in the present invention is：Multi-junction gallium arsenide solar cell bottom electrode of the prior art is complete using metal
Covering, causes solar cell warpage easily occur.
In order to solve the above technical problems, the technical solution adopted by the present invention is：There is provided a kind of ITO auxiliary slim more knot arsenic
The preparation method of gallium solar cell bottom electrode, comprises the following steps：
(1) gluing：The one side that Top electrode has been deposited on epitaxial wafer is subjected to gluing；
(2) clean：Epitaxial wafer after gluing is put into hydrofluoric acid solution and corroded, is soaked afterwards with organic solvent
Bubble cleaning, removes the gluing in Top electrode；
(3) evaporation metal grid line：Epitaxial wafer after cleaning is put into metal grid lines mould, is deposited at the back side of epitaxial wafer
Metal grid lines；
(4) ito film layer is deposited：By step (3) to epitaxial wafer be put into ito film layer mould, at the back side of epitaxial wafer
Ito film layer is deposited, produces；
Wherein, the metal grid lines area of bottom electrode and ito film floor area edge overlap, and the width of coincidence is more than or equal to 0.5mm.
Preferably, in the step (1), the epitaxial wafer after gluing heats 40s~60s at 60 DEG C~110 DEG C.
Further, in the step (2), the concentration of hydrofluoric acid solution is 10%~20%, etching time is 20~
40s。
Preferably, in the step (2), organic solvent is acetone.
Further, the material of the metal grid lines is Au-Ge-Ag.
Preferably, the material of the metal grid lines is Au-Ge-Ag, and its ratio is：1:1:4~1:1:20.
Preferably, in the step (4), carry out that ito film layer is deposited using vacuum coating.
Further, the vacuum of the vacuum evaporation is more than 5 × 10-4Pa。
Preferably, the thickness of the ito film layer is that the thickness of the ito film layer is 20~500nm.
Further, the area ratio in the metal grid lines area of the bottom electrode and ito film floor area is 2:1~1:50, bottom electrode
The area in middle metal grid lines area is more than or equal to weld zone area.
The present invention has the advantages and positive effects of：
1st, the present invention is applied to thickness and reaches less than 145 μm of the II-VI group solar cell of large scale III-V, using metal grid lines and
Ito film layer is combined as bottom electrode, reduces the bottom electrode metal area coverage of solar cell, efficiently solves thin battery
Warpage issues, reduce the weight of battery.
2nd, the present invention is using material systems of the Au-Ge-Ag as the bottom electrode for collecting photogenerated current, with cell semiconductor material
Material forms good Ohmic contact, has good solderability and firmness.
3rd, the application can increase the conductive capability between metal grid lines, reduce lower electricity using ito film layer as conductive film layer
The coverage rate of pole metal grid lines, the dosage of metal in battery is reduced, further mitigates solar cell weight.
Brief description of the drawings
Fig. 1 is that a kind of ITO auxiliary slim three saves showing for gallium arsenide solar cell bottom electrode in the application one embodiment
It is intended to.
Fig. 2 is a kind of gold of the slim three sections gallium arsenide solar cell bottom electrode of ITO auxiliary in the application one embodiment
Belong to grid line mould schematic diagram.
Fig. 3 is a kind of ITO of the slim three sections gallium arsenide solar cell bottom electrode of ITO auxiliary in the application one embodiment
Film layer mould schematic diagram.
In figure：1- metal grid lines area, 2-ITO film layers area, 3- weld zones.
Embodiment
In order to be better understood from the present invention, the present invention is further retouched with reference to specific embodiments and the drawings
State.
Below in conjunction with Fig. 1-Fig. 3, by taking a kind of ITO auxiliary types three-junction gallium arsenide solar cell as an example, its bottom electrode is introduced
Preparation method：
(1) bottom electrode is deposited：
The epitaxial wafer that Top electrode has been deposited is put into glue spreader, 60 after a face gluing of evaporation Top electrode, gluing
DEG C~110 DEG C of baking oven in toast 40s~60s.
(2) clean：
After baking, epitaxial wafer is put into the hydrofluoric acid solution that concentration is 10%~20% and corrodes 20~40s, is spent afterwards
Ionized water cleans 2~3 times.Then 3~5min is soaked in acetone, removes the gluing in Top electrode, it is clear with deionized water again
Wash 3~5 times, dry.
(3) evaporation metal grid line：
The epitaxial wafer obtained in step (2) is fitted into metal grid lines mould as shown in Figure 2 and fixed, be put into automatic evaporation
In equipment, fed in the crucible of equipment, set automatic evaporation process, in the back side evaporation metal grid line of epitaxial wafer.Wherein, it is golden
The material for belonging to grid line is Au-Ge-Ag, and its ratio is：1:1:4~1:1:20.
(4) ito film layer is deposited
The epitaxial wafer that step (3) obtains is put into mould as shown in Figure 3, mould is put into high vacuum coating unit afterwards
On evaporation disc, ito film material is loaded in crucible, the door for vacuum chamber of high vacuum coating unit is closed, to high vacuum coating unit in vacuum
In the case that degree is more than 5 × 10-4Pa, the ito film layer thick evaporation 100nm in the bottom electrode face of epitaxial wafer, weld zone is not deposited
Ito film layer.
So far, complete as shown in figure 1, completing a kind of manufacture of ITO auxiliary types three-junction gallium arsenide solar cell bottom electrode
Process.
Wherein, when carrying out the preparation of bottom electrode, its metal grid lines area and ito film floor coincident, the width of coincidence are more than
Equal to 0.5mm, the metal grid lines area of bottom electrode and the area ratio in ito film floor area are 2:1~1:50, metal grid lines area in bottom electrode
Area be more than or equal to weld zone area.
ITO of the present invention aids in bottom electrode producing principle：
In solar cells, the main function of upper and lower electrode is extracted current.Bottom electrode is as non-illuminated surface in order to more
Good derived current, the pattern of generally use metal electrode all standing, to obtain high reliability.However, for large scale
For battery, particularly area is more than 30cm2Battery, the metal electrode of all standing can cause the warpage of battery, influence follow-up draw
The progress of piece and assembling procedure etc..Therefore, the application is combined as under solar cell using metal grid lines with ito film layer
Electrode, the weight of battery can be mitigated, mitigate the degree of warpage, and can ensured that its electric current is derived and act on, ensure solderability and
Firmness.
Although the preferred embodiments of the present invention are described above in conjunction with accompanying drawing, the invention is not limited in upper
The embodiment stated, thickness and figure to ito film layer are not limited to the specific figure in embodiment, are only schematic
Be not it is restricted, Evaluation product is also not limited to three junction batteries.
One of ordinary skill in the art is not departing from present inventive concept and claim is protected under the enlightenment of the present invention
Under the ambit of shield, many forms can also be made.All equivalent changes made according to the scope of the invention and improvement etc., all should be still
Belong within this patent covering scope.
Claims (10)
1. a kind of ITO aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode, it is characterised in that：Including following
Step：
(1) gluing：The one side that Top electrode has been deposited on epitaxial wafer is subjected to gluing；
(2) clean：Epitaxial wafer after gluing is put into hydrofluoric acid solution and corroded, with organic solvent soak clearly afterwards
Wash, remove the gluing in Top electrode；
(3) evaporation metal grid line：Epitaxial wafer after cleaning is put into metal grid lines mould, in the back side evaporation metal of epitaxial wafer
Grid line；
(4) ito film layer is deposited：By step (3) to epitaxial wafer be put into ito film layer mould, be deposited at the back side of epitaxial wafer
Ito film layer, is produced；
Wherein, the metal grid lines area of bottom electrode and ito film floor area edge overlap, and the width of coincidence is more than or equal to 0.5mm.
2. ITO according to claim 1 aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode, it is special
Sign is：In the step (1), the epitaxial wafer after gluing heats 40s~60s at 60 DEG C~110 DEG C.
3. ITO according to claim 1 aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode, it is special
Sign is：In the step (2), the concentration of hydrofluoric acid solution is 10%~20%, and etching time is 20~40s.
4. the ITO according to claim 1 or 3 aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode,
It is characterized in that：In the step (2), organic solvent is acetone.
5. ITO according to claim 1 aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode, it is special
Sign is：The material of the metal grid lines is Au-Ge-Ag.
6. ITO according to claim 5 aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode, it is special
Sign is：The material of the metal grid lines is Au-Ge-Ag, and its ratio is：1:1:4~1:1:20.
7. ITO according to claim 1 aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode, it is special
Sign is：In the step (4), carry out that ito film layer is deposited using vacuum coating.
8. ITO according to claim 7 aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode, it is special
Sign is：The vacuum of the vacuum evaporation is more than 5 × 10-4Pa。
9. the ITO according to claim 1 or 7 or 8 aids in the preparation side of slim multi-junction gallium arsenide solar cell bottom electrode
Method, it is characterised in that：The thickness of the ito film layer is 20~500nm.
10. ITO according to claim 1 aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode, its
It is characterised by：The metal grid lines area of the bottom electrode and the area ratio in ito film floor area are 2:1~1:50, metal gate in bottom electrode
The area in line area is more than or equal to weld zone area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610057404.3A CN105702754B (en) | 2016-01-28 | 2016-01-28 | ITO aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610057404.3A CN105702754B (en) | 2016-01-28 | 2016-01-28 | ITO aids in the preparation method of slim multi-junction gallium arsenide solar cell bottom electrode |
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| Publication Number | Publication Date |
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| CN105702754A CN105702754A (en) | 2016-06-22 |
| CN105702754B true CN105702754B (en) | 2018-01-16 |
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| CN108321249A (en) * | 2017-12-27 | 2018-07-24 | 中国电子科技集团公司第十八研究所 | A kind of local reduction's gallium arsenide solar cell preparation method |
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| CN103022166A (en) * | 2011-09-28 | 2013-04-03 | 杭州赛昂电力有限公司 | Solar cell taking copper-clad aluminum wire as back electrode and producing process of solar cell |
| CN102315288A (en) * | 2011-09-30 | 2012-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Thin film solar cell and preparation method thereof |
| CN103151398A (en) * | 2013-02-17 | 2013-06-12 | 英利集团有限公司 | Heterojunction battery and manufacturing method thereof |
| CN104347754A (en) * | 2013-08-05 | 2015-02-11 | 天津恒电空间电源有限公司 | Preparation method of thin-type GaInP/GaAs/Ge solar cell |
| CN104916712A (en) * | 2014-03-11 | 2015-09-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | Solar battery grid wire combination electrode |
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