CN109768111A - A kind of GaAs nano-pillar-graphene schottky junction solar battery and preparation method thereof - Google Patents
A kind of GaAs nano-pillar-graphene schottky junction solar battery and preparation method thereof Download PDFInfo
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- CN109768111A CN109768111A CN201811525715.3A CN201811525715A CN109768111A CN 109768111 A CN109768111 A CN 109768111A CN 201811525715 A CN201811525715 A CN 201811525715A CN 109768111 A CN109768111 A CN 109768111A
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a kind of GaAs nano-pillar-graphene schottky junction solar batteries, from the bottom to top successively include back electrode, GaAs piece, GaAs nano-pillar, graphene layer, positive electrode.The GaAs nano-pillar height is 500-3000nm, and diameter is 15~100nm.The invention also discloses a kind of GaAs nano-pillar-graphene schottky junction solar battery preparation methods.The present invention increases the area of schottky junction by growth nano-pillar, improves the utilization efficiency of light, realizes the high photoelectric conversion efficiency of solar battery；Method of the invention is simple, at low cost.
Description
Technical field
The present invention relates to the technical field of solar battery, in particular to a kind of GaAs nano-pillar-graphene schottky junction
Solar battery and preparation method thereof.
Background technique
Graphene is a kind of honeycomb flat film formed by carbon atom, has high conductivity, high-transmittance, high conduction
The features such as rate, adjustable work function, is mainly applied to the preparation of solar battery in the application of semiconductor field.Graphene is quasi-
Metal, work function are greater than GaAs, and Schottky contacts can be formed by contacting with GaAs, can prepare solar-electricity using schottky junction
Pond.Graphene-GaAs schottky junction solar cell, compared to the silicon solar cell of mainstream have structure is simple, technique is convenient, at
The advantages that this is cheap, has a good application prospect.But if graphene is directly contacted with GaAs, due to being produced on GaAs
Raw electrons and holes are all easy to through graphene, and the compound of electrons and holes can occur on graphene, make photogenerated current
Reduce, so that making the efficiency of solar battery reduces.
Summary of the invention
In order to overcome the disadvantages mentioned above and deficiency of the prior art, the purpose of the present invention is to provide a kind of GaAs nano-pillars-
Graphene schottky junction solar battery, high conversion efficiency.
Another object of the present invention is to provide a kind of preparations of GaAs nano-pillar-graphene schottky junction solar battery
Method, simple process are low in cost.
The purpose of the present invention is achieved through the following technical solutions:
A kind of GaAs nano-pillar-graphene schottky junction solar battery successively includes back electrode, GaAs from the bottom to top
Piece, GaAs nano-pillar, graphene layer, positive electrode.
The GaAs nano-pillar height is 500-3000nm, and diameter is 15~100nm.
The GaAs piece is GaAs epitaxial wafer.
The GaAs piece is N-type GaAs piece.
The number of plies of the graphene layer is 5~10 layers.
The back electrode is gold electrode, silver electrode or aluminium electrode；The back electrode is with a thickness of 50~350nm.
The positive electricity extremely conductive silver glue or filamentary silver；With a thickness of 200~5000nm.
The GaAs nano-pillar-graphene schottky junction solar battery preparation method, comprising the following steps:
(1) back electrode is plated on one side in GaAs piece, the one side that back electrode is coated in GaAs piece is known as lower surface, it is another
Face is known as upper surface；GaAs nano-pillar is grown in the upper surface of GaAs piece using molecular beam epitaxial growth technique；
(2) graphene after pretreatment is transferred in nano-pillar, obtains graphene layer；
(3) positive electrode is prepared on graphene layer.
Step (1) is described to plate back electrode, specific steps in GaAs piece on one side are as follows:
(S1) it plates back electrode: one layer of metal will be deposited on GaAs wafer, as back electrode；
(S2) it cuts: the GaAs wafer for being coated with back electrode is cut into square piece, then remove the impurity on square piece surface, obtain
It is coated with the GaAs piece of back electrode on one side.
Step (2) described pretreatment, specifically:
By the GaAs piece containing graphene layer, is toasted in 75~225 DEG C, successively impregnate, blow under hot acetone, room temperature acetone
It is dry；The temperature of the hot acetone is in 20~80 DEG C, and the time of immersion is 5~50min, the number 1~3 impregnated under room temperature acetone
It is secondary.
Compared with prior art, the present invention has the following advantages and beneficial effects:
(1) present invention on the GaAs substrate of graphene-GaAs schottky junction solar battery by growing high quality
GaAs nano-pillar improves the area of schottky junction, improves the utilization rate of light, and the final photoelectricity for realizing that solar battery is high turns
Change efficiency；
(2) preparation method of the invention is simple and effective, and device preparation technology is at low cost, and cell photoelectric transfer efficiency obviously mentions
It is high.
Detailed description of the invention
Fig. 1 is GaAs nano wire-graphene schottky junction solar battery structure schematic diagram of embodiment 1.
Fig. 2 is GaAs nano wire-graphene schottky junction solar battery current-voltage relation curve of embodiment 1.
Specific embodiment
Below with reference to embodiment, the present invention is described in further detail, embodiments of the present invention are not limited thereto.
Embodiment 1
The GaAs nano-pillar of the present embodiment-graphene schottky junction solar battery structure schematic diagram is as shown in Figure 1, under
Supreme successively includes back electrode (gold electrode) 1, GaAs piece 2, nano-pillar 3, graphene layer 4 and positive electrode (conductive silver glue) 5.
The GaAs nano-pillar of the present embodiment-graphene schottky junction solar battery preparation method, comprising the following steps:
(1) preparation of rear electrode: 2 inches of GaAs wafers are attached on disk, to be pasted around the surrounding of disk
Upper circle adhesive tape, first is that fixed GaAs piece is on disk, second is that electrode is prevented to be plated to the edge of disk；Then electron beam steaming is put into
Hair system, plates one layer of gold electrode, gold electrode with a thickness of 100nm, direct removal adhesive tape after gold electrode has plated；
(2) it cuts: the GaAs disk for having plated gold electrode being cut with diamant, is cut into about one square centimeter of size
Square piece；
(3) it cleans GaAs piece: GaAs piece is placed in ultrasonic cleaning 5min in acetone；It is placed in ultrasonic cleaning in ethyl alcohol again
5min；It after then using ultrapure water 5 times, puts dilute hydrochloric acid into and handles 3min, be finally to use the surface ultrapure water GaAs 5 times
Afterwards, it dries up；
(4) GaAs makes annealing treatment: using GaAs substrate, GaAs's is oriented to (111)；It places the substrate into reaction chamber,
600~700 DEG C of annealings to progress 10-15 minutes of processed GaAs substrate, it is many tiny to be formed on GaAs layer
Hole, the growth for GaAs nano-pillar provides nucleation site.
(5) preparation of high quality GaAs nano-pillar: molecular beam epitaxial growth technique is used, on GaAs substrate after treatment
Grow GaAs nano-pillar.The height of GaAs nano wire is 600nm, diameter 20nm.
(6) it shifts graphene: taking out the GaAs piece that grown nano-pillar, graphene is shifted, graphene drift
It floats in clear water, clamps one jiao of GaAs piece with tweezers, the cautious Van der Waals force using hydrone is bonded graphene
In nano-pillar, naturally dry half an hour；The number of plies of graphene is 6-8 layers；
(7) post-process: the GaAs piece after half an hour of drying in the air is put on hot plate, toasts 15min in 75 DEG C of temperature, remove
The moisture of the inside keeps graphene closer and is bonded with GaAs piece；Then 10min is handled under 40 DEG C of acetone, removing some has
Machine object；It is transferred to after impregnating 20min under room temperature acetone, then changes an acetone soak 10min；
(8) preparation of positive electrode: being dried up with the GaAs piece after acetone treatment with gentle breeze, graphene edge rubberizing is surrounded
Then band does a circle conductive silver glue with syringe in graphene edge, conductive silver glue with a thickness of 500nm, the shape of conductive silver glue
Shape is consistent with the shape of graphene Window layer, is all rectangle or square, notices that conductive silver glue cannot meet GaAs, can only
On graphene (effect taped is exactly to prevent conductive silver glue from flowing to the surface GaAs)；Finally, toasting conductive silver at 75 DEG C
Glue about 10min dries conductive silver glue.
The present invention introduces one layer of nano-pillar between the GaAs and graphene of graphene-GaAs solar battery, on the one hand
Nano-pillar can be prevented electronics, be reduced the compound of electrons and holes with conduction hole, reduced the loss of photogenerated current, improved the sun
The efficiency of energy battery.On the other hand, the introducing of nano-pillar can increase the area of schottky junction, increase the utilization efficiency of light.Electricity
The performance in pond is as shown in Fig. 2, it can be seen from the figure that the short-circuit current density of device significantly improves, but fill factor is lower than
65%, this may be since the surface of nano-pillar lacks the effectively contact interface existing defects of passivation or nano-pillar and graphene
Cause.Therefore, the solar battery of growth nano-pillar prepared by the present invention, photoelectric conversion efficiency and fill factor all obtain obviously
It improves.
Embodiment 2
The GaAs nano-pillar of the present embodiment-graphene schottky junction solar battery preparation method, comprising the following steps:
(1) preparation of rear electrode: 2 inches of GaAs wafers are attached on disk, to be pasted around the surrounding of disk
Upper circle adhesive tape, first is that fixed GaAs piece is on disk, second is that electrode is prevented to be plated to the edge of disk；Then electron beam steaming is put into
Hair system, plates one layer of gold electrode, gold electrode with a thickness of 100nm, direct removal adhesive tape after gold electrode has plated；
(2) it cuts: the GaAs disk for having plated gold electrode being cut with diamant, is cut into about one square centimeter of size
Square piece；
(3) it cleans GaAs piece: GaAs piece is placed in ultrasonic cleaning 5min in acetone；It is placed in ultrasonic cleaning in ethyl alcohol again
5min；It after then using ultrapure water 5 times, puts dilute hydrochloric acid into and handles 3min, be finally to use the surface ultrapure water GaAs 5 times
Afterwards, it dries up；
(4) GaAs makes annealing treatment: using GaAs substrate, GaAs's is oriented to (111)；It places the substrate into reaction chamber,
600~700 DEG C of annealings to progress 10-15 minutes of processed GaAs substrate, it is many tiny to be formed on GaAs layer
Hole, the growth for GaAs nano-pillar provides nucleation site.
(5) preparation of high quality GaAs nano-pillar: molecular beam epitaxial growth technique is used, on GaAs substrate after treatment
Grow GaAs nano-pillar.The height of GaAs nano wire is 1000nm, diameter 40nm.
(6) it shifts graphene: taking out the GaAs piece that grown nano-pillar, graphene is shifted, graphene drift
It floats in clear water, clamps one jiao of GaAs piece with tweezers, the cautious Van der Waals force using hydrone is bonded graphene
In nano-pillar, naturally dry half an hour；The number of plies of graphene is 6-8 layers；
(7) post-process: the GaAs piece after half an hour of drying in the air is put on hot plate, toasts 15min in 75 DEG C of temperature, remove
The moisture of the inside keeps graphene closer and is bonded with GaAs piece；Then 10min is handled under 40 DEG C of acetone, removing some has
Machine object；It is transferred to after impregnating 20min under room temperature acetone, then changes an acetone soak 10min；
(8) preparation of positive electrode: being dried up with the GaAs piece after acetone treatment with gentle breeze, graphene edge rubberizing is surrounded
Then band does a circle conductive silver glue with syringe in graphene edge, conductive silver glue with a thickness of 500nm, the shape of conductive silver glue
Shape is consistent with the shape of graphene Window layer, is all rectangle or square, notices that conductive silver glue cannot meet GaAs, can only
On graphene (effect taped is exactly to prevent conductive silver glue from flowing to the surface GaAs)；Finally, toasting conductive silver at 75 DEG C
Glue about 10min dries conductive silver glue.
Embodiment 3
The GaAs nano-pillar of the present embodiment-graphene schottky junction solar battery preparation method, comprising the following steps:
(1) preparation of rear electrode: 2 inches of GaAs wafers are attached on disk, to be pasted around the surrounding of disk
Upper circle adhesive tape, first is that fixed GaAs piece is on disk, second is that electrode is prevented to be plated to the edge of disk；Then electron beam steaming is put into
Hair system, plates one layer of gold electrode, gold electrode with a thickness of 100nm, direct removal adhesive tape after gold electrode has plated；
(2) it cuts: the GaAs disk for having plated gold electrode being cut with diamant, is cut into about one square centimeter of size
Square piece；
(3) it cleans GaAs piece: GaAs piece is placed in ultrasonic cleaning 5min in acetone；It is placed in ultrasonic cleaning in ethyl alcohol again
5min；It after then using ultrapure water 5 times, puts dilute hydrochloric acid into and handles 3min, be finally to use the surface ultrapure water GaAs 5 times
Afterwards, it dries up；
(4) GaAs makes annealing treatment: using GaAs substrate, GaAs's is oriented to (111)；It places the substrate into reaction chamber,
600~700 DEG C of annealings to progress 10-15 minutes of processed GaAs substrate, it is many tiny to be formed on GaAs layer
Hole, the growth for GaAs nano-pillar provides nucleation site.
(5) preparation of high quality GaAs nano-pillar: molecular beam epitaxial growth technique is used, on GaAs substrate after treatment
Grow GaAs nano-pillar.The height of GaAs nano wire is 2000nm, diameter 80nm.
(6) it shifts graphene: taking out the GaAs piece that grown nano-pillar, graphene is shifted, graphene drift
It floats in clear water, clamps one jiao of GaAs piece with tweezers, the cautious Van der Waals force using hydrone is bonded graphene
In nano-pillar, naturally dry half an hour；The number of plies of graphene is 6-8 layers；
(7) post-process: the GaAs piece after half an hour of drying in the air is put on hot plate, toasts 15min in 75 DEG C of temperature, remove
The moisture of the inside keeps graphene closer and is bonded with GaAs piece；Then 10min is handled under 40 DEG C of acetone, removing some has
Machine object；It is transferred to after impregnating 20min under room temperature acetone, then changes an acetone soak 10min；
(8) preparation of positive electrode: being dried up with the GaAs piece after acetone treatment with gentle breeze, graphene edge rubberizing is surrounded
Then band does a circle conductive silver glue with syringe in graphene edge, conductive silver glue with a thickness of 500nm, the shape of conductive silver glue
Shape is consistent with the shape of graphene Window layer, is all rectangle or square, notices that conductive silver glue cannot meet GaAs, can only
On graphene (effect taped is exactly to prevent conductive silver glue from flowing to the surface GaAs)；Finally, toasting conductive silver at 75 DEG C
Glue about 10min dries conductive silver glue.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of GaAs nano-pillar-graphene schottky junction solar battery, which is characterized in that from the bottom to top successively include back electricity
Pole, GaAs piece, GaAs nano-pillar, graphene layer, positive electrode.
2. GaAs nano-pillar according to claim 1-graphene schottky junction solar battery, which is characterized in that described
GaAs nano-pillar height is 500-3000nm, and diameter is 15~100nm.
3. GaAs nano-pillar according to claim 1-graphene schottky junction solar battery, which is characterized in that described
GaAs piece is GaAs epitaxial wafer.
4. GaAs nano-pillar according to claim 1 or 3-graphene schottky junction solar battery, which is characterized in that institute
Stating GaAs piece is N-type GaAs piece.
5. GaAs nano-pillar according to claim 1-graphene schottky junction solar battery, which is characterized in that described
The number of plies of graphene layer is 5~10 layers.
6. GaAs nano-pillar according to claim 1-graphene schottky junction solar battery, which is characterized in that described
Back electrode is gold electrode, silver electrode or aluminium electrode；The back electrode is with a thickness of 50~350nm.
7. GaAs nano-pillar according to claim 1-graphene schottky junction solar battery, which is characterized in that described
Positive electricity extremely conductive silver glue or filamentary silver；With a thickness of 200~5000nm.
8. the described in any item GaAs nano-pillars of claim 1~7-graphene schottky junction solar battery preparation method,
Characterized by comprising the following steps:
(1) back electrode is plated on one side in GaAs piece, the one side that back electrode is coated in GaAs piece is known as lower surface, another side claims
For upper surface；GaAs nano-pillar is grown in the upper surface of GaAs piece using molecular beam epitaxial growth technique；
(2) graphene after pretreatment is transferred in nano-pillar, obtains graphene layer；
(3) positive electrode is prepared on graphene layer.
9. GaAs nano-pillar according to claim 8-graphene schottky junction solar battery preparation method, feature
It is, step (1) is described to plate back electrode, specific steps in GaAs piece on one side are as follows:
(S1) it plates back electrode: one layer of metal will be deposited on GaAs wafer, as back electrode；
(S2) it cuts: the GaAs wafer for being coated with back electrode is cut into square piece, then remove the impurity on square piece surface, obtain one side
It is coated with the GaAs piece of back electrode.
10. GaAs nano-pillar according to claim 8-graphene schottky junction solar battery preparation method, special
Sign is, step (2) described pretreatment, specifically:
It by the GaAs piece containing graphene layer, toasts in 75~225 DEG C, is successively impregnated under hot acetone, room temperature acetone, dry up；
The temperature of the hot acetone is in 20~80 DEG C, and the time of immersion is 5~50min, number 1~3 time impregnated under room temperature acetone.
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