CN108365047A - A kind of graphene-GaAs schottky junction solar cells and preparation method thereof - Google Patents
A kind of graphene-GaAs schottky junction solar cells and preparation method thereof Download PDFInfo
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- CN108365047A CN108365047A CN201810097623.3A CN201810097623A CN108365047A CN 108365047 A CN108365047 A CN 108365047A CN 201810097623 A CN201810097623 A CN 201810097623A CN 108365047 A CN108365047 A CN 108365047A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 126
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 230000005540 biological transmission Effects 0.000 claims abstract description 62
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 58
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims abstract description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 48
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 10
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 10
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 9
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 claims description 5
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 26
- 229910052709 silver Inorganic materials 0.000 description 26
- 239000004332 silver Substances 0.000 description 26
- 239000003292 glue Substances 0.000 description 22
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 17
- 239000010931 gold Substances 0.000 description 17
- 229910052737 gold Inorganic materials 0.000 description 17
- 239000002390 adhesive tape Substances 0.000 description 9
- 229910021642 ultra pure water Inorganic materials 0.000 description 8
- 239000012498 ultrapure water Substances 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- 235000019441 ethanol Nutrition 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005411 Van der Waals force Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 3
- 238000010025 steaming Methods 0.000 description 3
- -1 with syringe Chemical compound 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
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Abstract
The invention belongs to the technical field of solar cell, a kind of graphene GaAs schottky junction solar cells and preparation method thereof are disclosed.Solar cell includes back electrode, GaAs pieces, hole transmission layer, graphene layer, positive electrode successively from the bottom to top；It further include passivation film.Method：(1) back electrode is plated on one side in GaAs pieces, the one side that back electrode is coated in GaAs pieces is known as lower surface, another side is known as upper surface；Hole transmission layer is plated in the upper surface of GaAs pieces；Or before plating hole transmission layer, the GaAs pieces for being coated with back electrode are placed in Passivation Treatment in passivator, form passivating film；(2) graphene is transferred on hole transmission layer, obtains graphene layer；(3) positive electrode is prepared on graphene layer.Hole transmission layer is added in the present invention, reduces the compound of electrons and holes, increases photogenerated current, realizes the high photoelectric conversion efficiency of solar cell；The method of the present invention is simple, at low cost.
Description
Technical field
The invention belongs to the technical field of solar cell, more particularly to a kind of graphene-having hole transmission layer
GaAs schottky junction solar cells and preparation method thereof.
Background technology
Graphene is a kind of cellular flat film formed by carbon atom, has high conductivity, high-transmittance, work function
The features such as adjustable, extensively using on the solar cell.Graphene has the property of metal, and work function is more than GaAs, with GaAs
Contact can form Schottky contacts, and solar cell can be prepared using schottky junction.Graphene-GaAs schottky junction the sun
Battery, have many advantages, such as compared to the silicon solar cell of mainstream it is simple for process, of low cost, with good application prospect.But
It is, if graphene and GaAs are in direct contact, since the electrons and holes generated on GaAs are all easy to through graphene, meeting
The compound of electrons and holes occurs on graphene, so that photogenerated current is reduced, to make the efficiency of solar cell reduce.It is positive because
Not high for transfer efficiency, which is not utilized generally also.Therefore how research is keeping solar cell simple
The transfer efficiency that solar cell is effectively improved while technique and low cost, has a very important significance.
Invention content
It is a kind of empty with high-performance it is an object of the invention to prepare in order to overcome the disadvantages mentioned above and deficiency of the prior art
Graphene-GaAs schottky junction the solar cells of cave transport layer, not only simple for process, at low cost, transfer efficiency also obviously carries
It is high.
Another object of the present invention is to provide the above-mentioned graphene-GaAs schottky junction solar energy for having hole transmission layer
The preparation method of battery.
The purpose of the present invention is achieved through the following technical solutions：
A kind of graphene-GaAs schottky junction solar cells having hole transmission layer include the back of the body successively from the bottom to top
Electrode, GaAs pieces, hole transmission layer, graphene layer, positive electrode.
The back electrode is the electrode material of routine, preferably gold electrode, silver electrode or aluminium electrode；Thickness be 50~
350nm。
The hole transmission layer is the film layer that molybdenum oxide layer, nickel oxide layer or molybdenum oxide layer are formed by stacking with nickel oxide layer；
Its thickness is 2~12nm.
The extremely conventional electrode material of the positive electricity, preferably conductive silver glue or filamentary silver；Thickness is 200~5000nm.
The GaAs pieces are GaAs epitaxial wafers, preferably N-type GaAs pieces.
The number of plies of the graphene layer is 5~10 layers.
Graphene-GaAs schottky junction the solar cells for having hole transmission layer, further include passivation film, described
Passivation film is set between GaAs pieces and hole transmission layer；The passivation film is passivator in GaAs pieces surface passivation institute shape
At film layer；The surface is the surface for not being coated with back electrode；
The preparation method of the graphene-GaAs schottky junction solar cells for having hole transmission layer, including it is following
Step：
(1) back electrode is plated on one side in GaAs pieces, the one side that back electrode is coated in GaAs pieces is known as lower surface, it is another
Face is known as upper surface；Last layer hole transmission layer is plated in the upper surface of GaAs pieces；Or it before plating hole transmission layer, will be coated with
The GaAs pieces of back electrode, which are placed in passivator, is passivated processing, and the surface that GaAs pieces are not coated with back electrode forms passivating film；
The hole transmission layer is molybdenum oxide film layer, nickel oxide film layer or molybdenum oxide film layer and nickel oxide film layer stack combinations
It is formed by film layer；The time of Passivation Treatment is 2~50min；The passivator is thioacetyl amine aqueous solution, and thioacetamide is molten
A concentration of 5~50mM (mmol/L) of liquid；
(2) graphene is transferred on hole transmission layer, obtains graphene layer；
(3) positive electrode is prepared on graphene layer.
Thioacetyl amine aqueous solution described in step (1) is the ethanol solution of thioacetamide；
Back electrode is plated on one side in GaAs pieces in step (1), the specific steps are：
(S1) back electrode is plated：One layer of metal will be deposited on GaAs wafers, as back electrode；The metal is the electrode of routine
Material, it is preferably golden；The thickness of back electrode is 50~350nm；
(S2) it cuts：The GaAs wafers for being coated with back electrode are cut into square piece, then remove the impurity on square piece surface, are obtained
It is coated with the GaAs pieces of back electrode on one side.
The impurity on the removal square piece surface refers to using the GaAs pieces of well cutting successively ultrasound in acetone, ethyl alcohol clear
It washes, is then cleaned with ultra-pure water, then use and handled in hydrochloric acid solution.
Before plating hole transmission layer, GaAs pieces need to be cleaned with ultra-pure water, and be dried up.
Graphene layer need to be heated and be cleaned pretreatment, the heat treatment and removal of impurities pretreatment in step (2)
Refer to that the GaAs pieces containing graphene layer in 75~225 DEG C of bakings, are impregnated under hot acetone, room temperature acetone, dried up successively；
The temperature of the hot acetone is in 20~80 DEG C, and the time of immersion is 5~50min, the number impregnated under room temperature acetone 1~3 time.
The baking preferably refers to 5~30min of afterheat baking, the different temperature at different temperatures and is derived from 75~225 DEG C, and gradient is
50~75 DEG C, number >=3 of different temperatures；Preferably 75,150,225 DEG C.
The extremely conventional electrode material of positive electricity described in step (3), it is preferably silver-colored；The positive electrode is specifically by conductive silver
Glue is coated on graphene, drying.The condition of the drying is in 40~120 DEG C of dry 4~20min.The positive electrode is square,
Round, annular or other shapes, are preferably square.
Compared with prior art, the present invention has the following advantages and beneficial effect：
(1) present invention utilizes hole by the way that hole transmission layer is added in graphene-GaAs schottky junction solar cells
Transport layer has the function of stopping electronics conduction hole, electrons and holes is separated, to reduce the compound of electrons and holes,
Increase photogenerated current, the final photoelectric conversion efficiency for realizing that solar cell is high；
(2) preparation method of the invention is simple and effective, and device preparation technology is at low cost, and cell photoelectric transfer efficiency obviously carries
It is high.
Description of the drawings
Fig. 1 is the graphene-GaAs schottky junction solar battery structures signal for having hole transmission layer of embodiment 1
Figure；
Fig. 2 is the graphene-GaAs schottky junction solar cell current-voltages for having hole transmission layer of embodiment 1
Graph of relation；Wherein blank control is the graphene-GaAs schottky junction solar cells of no hole transmission layer, the holes 2nm
Transport layer is the graphene-GaAs schottky junction solar cells that embodiment 1 has hole transmission layer.
Specific implementation mode
With reference to embodiment and attached drawing, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
Embodiment 1
Graphene-GaAs schottky junction solar battery structures the schematic diagram for having hole transmission layer of the present embodiment is as schemed
Include back electrode (gold electrode) 1, GaAs pieces 2, hole transmission layer 3, graphene layer 4 and positive electrode successively from the bottom to top shown in 1
(conductive silver glue) 5.
The preparation method of the graphene-GaAs schottky junction solar cells for having hole transmission layer of the present embodiment, packet
Include following steps：
(1) preparation of backplate：One 2 inches of GaAs wafer is attached on disk, the surrounding that surround disk is pasted
Upper circle adhesive tape, first, fixed GaAs pieces are on disk, second is that electrode is prevented to be plated to the edge of disk；Then electron beam steaming is put into
Hair system plates last layer gold electrode, and the thickness of gold electrode is 100nm, and gold electrode directly removes adhesive tape after having plated；
(2) it cuts：The GaAs disks for having plated gold electrode are cut with diamant, cut into about one square centimeter of size
Square piece；
(3) GaAs pieces are cleaned：GaAs pieces are placed in ultrasonic cleaning 5min in acetone；It is placed in ultrasonic cleaning in ethyl alcohol again
5min；It then with after ultrapure water 5 times, puts dilute hydrochloric acid into and handles 3min, be finally to use the surfaces ultrapure water GaAs 5 times
Afterwards, it dries up；
(4) hole transmission layer is plated：GaAs pieces after cleaning is dried up are attached on disk, are coated with the one side and disk of gold electrode
Contact is lain around with adhesive tape and pastes a circle, is prevented plating material to be plated to edge up, is then put electron beam evaporation system into, vacuumize,
The molybdenum oxide hole transmission layer of one layer of 2nm thickness is plated on the surfaces GaAs, electron-beam voltage is 10kV during vapor deposition, and evaporation time is
2 minutes；
(5) graphene is shifted：The GaAs pieces for having plated hole transmission layer are taken out, graphene are shifted, graphene
It swims in clear water, clamps one jiao of GaAs pieces with tweezers, the cautious Van der Waals force using hydrone makes graphene paste
It closes on the hole transport layer, naturally dry half an hour；The number of plies of graphene is 6-8 layers；
(6) it post-processes：Dry in the air the GaAs pieces after half an hour, puts on hot plate, toasts 15min in 75 DEG C of temperature, removes
The moisture of the inside keeps graphene closer and is bonded with GaAs pieces；Then 10min is handled under 40 DEG C of acetone, removing some has
Machine object；It is transferred to after impregnating 20min under room temperature acetone, then changes an acetone soak 10min；
(7) preparation of positive electrode：Being dried up with gentle breeze with the GaAs pieces after acetone treatment, graphene edge rubberizing is surrounded
Then band does a circle conductive silver glue in graphene edge with syringe, the thickness of conductive silver glue is 500nm, the shape of conductive silver glue
Shape is consistent with the shape of graphene Window layer, is all rectangle or square, notices that conductive silver glue cannot meet GaAs, can only
On graphene (effect taped is exactly to prevent conductive silver glue from flowing to the surfaces GaAs)；Finally, conductive silver is toasted at 75 DEG C
Glue about 10min dries conductive silver glue.
Fig. 2 is the graphene-GaAs schottky junction solar cell current-voltages for having hole transmission layer of embodiment 1
Graph of relation；Wherein blank control is the graphene-GaAs schottky junction solar cells of no hole transmission layer, the holes 2nm
Transport layer is the graphene-GaAs schottky junction solar cells that embodiment 1 has hole transmission layer.
The fill factor of blank control group is 60%, transfer efficiency 7.73%；By adding between graphene and GaAs
Enter one layer of hole and go out transport layer, the fill factor of solar cell is increased to 72%, and transfer efficiency is increased to 9.83%, solar energy
The performance of battery significantly improves.
The present invention introduces one layer of hole transmission layer between the GaAs and graphene of graphene-GaAs solar cells, and one
Aspect hole transmission layer can pass to hole, prevent electronics, reduce the compound of electrons and holes, reduce the loss of photogenerated current,
Improve the efficiency of solar cell.On the other hand, the introducing of hole transmission layer can improve Schottky barrier, be opened to improve
Road voltage increases the fill factor of solar cell.Therefore, prepared by the present invention has the solar cell of hole transmission layer,
Photoelectric conversion efficiency and fill factor are all improved significantly.
Embodiment 2
The preparation method of the graphene-GaAs schottky junction solar cells for having hole transmission layer of the present embodiment, packet
Include following steps：
(1) preparation of backplate：One 2 inches of GaAs wafer is attached on disk, the surrounding that surround disk is pasted
Upper circle adhesive tape, first, fixed GaAs pieces are on disk, second is that electrode is prevented to be plated to the edge of disk；Then electron beam steaming is put into
Hair system plates last layer gold electrode, and the thickness of gold electrode is 60~300nm, and gold electrode directly removes adhesive tape after having plated；
(2) it cuts：The GaAs disks for having plated gold electrode are cut with diamant, cut into about one square centimeter of size
Square piece；
(3) GaAs pieces are cleaned：GaAs pieces are placed in ultrasonic cleaning 5min in acetone；It is placed in ultrasonic cleaning in ethyl alcohol again
5min；Then with after ultrapure water 5 times, puts dilute hydrochloric acid into and handle 3min；It is placed in thioacetamide solution treatment 5min again,
The surfaces GaAs are passivated, passivating film is formed on the surfaces GaAs for not being coated with back electrode, finally uses the surfaces ultrapure water GaAs 5 times
Afterwards, it dries up；
(4) hole transmission layer is plated：GaAs pieces after cleaning is dried up are attached on disk, are coated with the one side and disk of gold electrode
Contact is lain around with adhesive tape and pastes a circle, is prevented plating material to be plated to edge up, is then put electron beam evaporation system into, vacuumize,
The nickel oxide hole transmission layer of one layer of 5nm thickness is plated on the surfaces GaAs (surface of passivating film)；
(5) graphene is shifted：The GaAs pieces for having plated hole transmission layer are taken out, graphene are shifted, graphene
It swims in clear water, clamps one jiao of GaAs pieces with tweezers, the cautious Van der Waals force using hydrone makes graphene paste
It closes on the hole transport layer, naturally dry half an hour；The number of plies of graphene is 9-10 layers；
(6) it post-processes：Dry in the air the GaAs pieces after half an hour, puts on hot plate, toasts 15min in 150 DEG C of temperature, removes
The moisture of the inside keeps graphene closer and is bonded with GaAs pieces；Then 10min is handled under 40 DEG C of acetone, removing some has
Machine object；It is transferred to after impregnating 20min under room temperature acetone, then changes an acetone soak 10min；
(7) preparation of positive electrode：Being dried up with gentle breeze with the GaAs pieces after acetone treatment, graphene edge rubberizing is surrounded
Then band does a circle conductive silver glue in graphene edge with syringe, the thickness of conductive silver glue is 800nm, the shape of conductive silver glue
Shape is consistent with the shape of graphene Window layer, is all rectangle or square, notices that conductive silver glue cannot meet GaAs, can only
On graphene (effect taped is exactly to prevent conductive silver glue from flowing to the surfaces GaAs)；Finally, conductive silver is toasted at 75 DEG C
Glue about 10min dries conductive silver glue.
Embodiment 3
The preparation method of the graphene-GaAs schottky junction solar cells for having hole transmission layer of the present embodiment,
Include the following steps：
(1) preparation of backplate：One 2 inches of GaAs wafer is attached on disk, the surrounding that surround disk is pasted
Upper circle adhesive tape, first, fixed GaAs pieces are on disk, second is that electrode is prevented to be plated to the edge of disk；Then electron beam steaming is put into
Hair system plates last layer gold electrode, and the thickness of gold electrode is 100nm, and gold electrode directly removes adhesive tape after having plated；
(2) it cuts：The GaAs disks for having plated gold electrode are cut with diamant, cut into about one square centimeter of size
Square piece；
(3) GaAs pieces are cleaned：GaAs pieces are placed in ultrasonic cleaning 5min in acetone；It is placed in ultrasonic cleaning in ethyl alcohol again
5min；Then with after ultrapure water 5 times, dilute hydrochloric acid (concentrated hydrochloric acid is put into：Water volume ratio=1:3) 3min is handled in；It is placed in again
The surface thioacetamide solution treatment 10min, passivation GaAs forms passivating film, finally on the surfaces GaAs for not being coated with back electrode
With behind surfaces ultrapure water GaAs 5 times, drying；
(4) hole transmission layer is plated：GaAs pieces after cleaning is dried up are attached on disk, are coated with the one side and disk of gold electrode
Contact is lain around with adhesive tape and pastes a circle, is prevented plating material to be plated to edge up, is then put electron beam evaporation system into, vacuumize,
The molybdenum oxide hole transmission layer of one layer of 12nm thickness is plated on the surfaces GaAs；
(5) graphene is shifted：The GaAs pieces for having plated hole transmission layer are taken out, graphene are shifted, graphene
It swims in clear water, clamps one jiao of GaAs pieces with tweezers, the cautious Van der Waals force using hydrone makes graphene paste
It closes on the hole transport layer, naturally dry half an hour；The number of plies of graphene is 5-6 layers；
(6) it post-processes：Dry in the air the GaAs pieces after half an hour, puts on hot plate, toasts 15min in 75 DEG C of temperature, removes
The moisture of the inside keeps graphene closer and is bonded with GaAs pieces；Then 10min is handled under 40 DEG C of acetone, removing some has
Machine object；It is transferred to after impregnating 20min under room temperature acetone, then changes an acetone soak 10min；
(7) preparation of positive electrode：Being dried up with gentle breeze with the GaAs pieces after acetone treatment, graphene edge rubberizing is surrounded
Then band does a circle conductive silver glue in graphene edge with syringe, the thickness of conductive silver glue is 200~1000nm, conductive silver
The shape of glue is consistent with the shape of graphene Window layer, is all rectangle (7 × 15 square millimeters), notices that conductive silver glue cannot touch
It, can only be on graphene (effect taped is exactly to prevent conductive silver glue from flowing to the surfaces GaAs) to GaAs；Finally, at 75 DEG C
Conductive silver glue about 10min is toasted, conductive silver glue is dried.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications,
Equivalent substitute mode is should be, is included within the scope of the present invention.
Claims (10)
1. a kind of graphene-GaAs schottky junction solar cells having hole transmission layer, it is characterised in that：From the bottom to top according to
Secondary includes back electrode, GaAs pieces, hole transmission layer, graphene layer, positive electrode.
2. having the graphene-GaAs schottky junction solar cells of hole transmission layer according to claim 1, feature exists
In：The hole transmission layer is the film layer that molybdenum oxide layer, nickel oxide layer or molybdenum oxide layer are formed by stacking with nickel oxide layer.
3. having the graphene-GaAs schottky junction solar cells of hole transmission layer according to claim 1, feature exists
In：The thickness of the hole transmission layer is 2~12nm.
4. having the graphene-GaAs schottky junction solar cells of hole transmission layer according to claim 1, feature exists
In：The GaAs pieces are N-type GaAs pieces；The number of plies of the graphene layer is 5~10 layers.
5. having the graphene-GaAs schottky junction solar cells of hole transmission layer according to claim 1, feature exists
In：Further include passivation film, the passivation film is set between GaAs pieces and hole transmission layer；The passivation film is passivation
Agent is formed by film layer in GaAs piece surface passivations.
6. according to the graphene-GaAs schottky junction solar cells for having hole transmission layer described in any one of Claims 1 to 5
Preparation method, it is characterised in that：Include the following steps：
(1) back electrode is plated on one side in GaAs pieces, the one side that back electrode is coated in GaAs pieces is known as lower surface, another side claims
For upper surface；Last layer hole transmission layer is plated in the upper surface of GaAs pieces；Or before plating hole transmission layer, back of the body electricity will be coated with
The GaAs pieces of pole, which are placed in passivator, is passivated processing, and the surface that GaAs pieces are not coated with back electrode forms passivating film；
The hole transmission layer is molybdenum oxide film layer, nickel oxide film layer or molybdenum oxide film layer and nickel oxide film layer stack combinations institute shape
At film layer；
(2) graphene is transferred on hole transmission layer, obtains graphene layer；
(3) positive electrode is prepared on graphene layer.
7. having the preparation side of the graphene-GaAs schottky junction solar cells of hole transmission layer according to claim 6
Method, it is characterised in that：Passivator described in step (1) is thioacetyl amine aqueous solution.
8. having the preparation side of the graphene-GaAs schottky junction solar cells of hole transmission layer according to claim 6
Method, it is characterised in that：The time of Passivation Treatment is 2~50min in step (1)；Thioacetyl amine aqueous solution is described in step (1)
The ethanol solution of thioacetamide；
Back electrode is plated on one side in GaAs pieces in step (1), the specific steps are：
(S1) back electrode is plated：One layer of metal will be deposited on GaAs wafers, as back electrode；
(S2) it cuts：The GaAs wafers for being coated with back electrode are cut into square piece, then remove the impurity on square piece surface, obtain one side
It is coated with the GaAs pieces of back electrode.
9. having the preparation side of the graphene-GaAs schottky junction solar cells of hole transmission layer according to claim 6
Method, it is characterised in that：Graphene layer need to be heated and be cleaned pretreatment, the heat treatment and removal of impurities in step (2)
Pretreatment refers in 75~225 DEG C of bakings, impregnating the GaAs pieces containing graphene layer under hot acetone, room temperature acetone successively,
Drying.
10. having the preparation side of the graphene-GaAs schottky junction solar cells of hole transmission layer according to claim 9
Method, it is characterised in that：The temperature of the hot acetone is in 20~80 DEG C, and the time of immersion is 5~50min, is soaked under room temperature acetone
The number of bubble 1~3 time.
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