CN114093862A - Semitransparent perovskite/flexible CIGS four-end laminated solar cell and preparation method thereof - Google Patents
Semitransparent perovskite/flexible CIGS four-end laminated solar cell and preparation method thereof Download PDFInfo
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
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- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a semitransparent perovskite/flexible CIGS four-end laminated solar cell and a preparation method thereof, wherein the semitransparent perovskite/flexible CIGS four-end laminated solar cell comprises a stainless steel flexible substrate CIGS cell and a perovskite cell based on an amorphous IZO transparent electrode, the stainless steel flexible substrate CIGS cell comprises a cell stainless steel flexible lining body, a Mo electrode layer, a CIGS light absorption layer, a bottom cell buffer layer, a bottom cell AZO layer and a bottom cell metal grid which are sequentially laminated from bottom to top, and the perovskite cell based on the amorphous IZO transparent electrode comprises a glass lining body, an FTO layer, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer, a top cell buffer layer, a top cell TCO layer and a top cell metal grid. The semitransparent perovskite/flexible CIGS four-end laminated solar cell can improve the light utilization rate of the solar cell, further improve the photoelectric conversion efficiency of the solar cell and reduce the cost of the solar cell.
Description
Technical Field
The invention relates to the field of thin-film solar cell materials and devices, in particular to a semitransparent perovskite/flexible CIGS four-end laminated solar cell and a preparation method thereof.
Background
Solar energy is a renewable clean energy source and has important utilization value for human beings. The solar cell can directly convert solar energy into electric energy, and can be effectively utilized by human beings. At present, common solar cells include silicon cells, CIGS cells, dye-sensitized solar cells and perovskite cells, and because the energy distribution of solar spectrum is wide, any semiconductor material can only absorb photons with energy values larger than the forbidden bandwidth of the semiconductor material, and the light utilization rate of a single cell is low. Therefore, the efficiency improvement of the single solar cell is generally limited by the SQ (Shockley-queesser limit) theoretical efficiency, and the efficiency of the existing solar cell needs to be improved.
Disclosure of Invention
The invention aims to provide a semitransparent perovskite/flexible CIGS four-end laminated solar cell and a preparation method thereof, which can improve the light utilization rate of the solar cell, further improve the photoelectric conversion efficiency of the solar cell and reduce the cost of the solar cell.
In order to achieve the purpose, the invention provides the following technical scheme:
the semitransparent perovskite/flexible CIGS four-end laminated solar cell comprises a stainless steel flexible substrate CIGS cell and a perovskite cell based on an amorphous IZO transparent electrode, wherein the stainless steel flexible substrate CIGS cell comprises a cell stainless steel flexible lining body, a Mo electrode layer, a CIGS light absorption layer, a bottom cell buffer layer, a bottom cell AZO layer and a bottom cell metal grid which are sequentially stacked from bottom to top, and the perovskite cell based on the amorphous IZO transparent electrode comprises a top cell glass lining body, an FTO layer, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer, a top cell buffer layer, a top cell TCO layer and a top cell metal grid.
Preferably, the electron transport layer is SnO2The perovskite light absorption layer material is MA1-xFAxPbI3Wherein x is more than or equal to 0 and less than or equal to 1, and the hole transport layer of the semitransparent top battery is Spiro-OMeTAD, the top battery buffer layer is MoO3The TCO layer of the top battery is IZO, and the metal grid of the bottom battery and the metal grid of the top battery are both Ag grids.
A preparation method of a semitransparent perovskite/flexible CIGS four-end laminated solar cell comprises the following steps:
(1) preparation of the Electron transport layer
SnO2Diluting the 15 wt% aqueous colloidal dispersion with deionized water, wherein the dilution ratio is 1: 6, placing the diluent on a constant-temperature stirring table, stirring for 40 minutes, spin-coating the diluent on a glass substrate containing an FTO layer, and placing the glass substrate on a heating table for annealing for 30min after spin-coating;
(2)MA1-xFAxPbI3preparation of perovskite absorption layer
Mixing MAI, FAI and PbI2Mixing and dissolving in an organic solvent, stirring for 3-4 h at 70 ℃ to obtain MA with a certain concentration1- xFAxPbI3A perovskite precursor solution; then spin-coating the obtained precursor solution on a substrate, and placing the substrate on a constant-temperature heating table for annealing after the spin-coating is finished;
(3) preparation of hole transport layer
Dissolving Spiro-OMeTAD, 4-tert-butylpyridine and acetonitrile solution (the concentration is 520mg/mL) of bis (trifluoromethanesulfonyl) imido in chlorobenzene, placing the prepared solution on a constant-temperature heating table, stirring for 1h, and then spin-coating the solution on a substrate;
(4)MoO3preparation of buffer layer
MoO using thermal evaporation3Evaporating the buffer layer as a hole transport layer on the substrate;
(5) preparation of perovskite electrode based on amorphous IZO transparent electrode with high light transmittance
Will be evaporated with MoO3The substrate is placed in a magnetron sputtering instrument and is vacuumized to 3 multiplied by 10-4Pa, sputtering a layer of high-light-transmittance amorphous a-IZO film as a transparent electrode of the top cell by adopting an RF-magnetron sputtering coating technology;
(6) preparation of silver grid in semitransparent battery
Putting the substrate into a designed mask plate, putting the mask plate into a thermal evaporation coating instrument, putting Ag particles into a tungsten boat, and vacuumizing to 3 multiplied by 10-4Pa, evaporating and plating a layer of silver grid electrode on the a-IZO film by adopting a thermal evaporation method to improve the collection of current, thus obtaining the perovskite battery based on the amorphous IZO transparent electrode;
(7) stainless steel flexible substrate CIGS cell
Placing a stainless steel flexible substrate in a magnetron sputtering coating instrument, sputtering a Mo electrode layer, preparing a CIGS light absorption layer by adopting a binary co-evaporation method, then preparing a bottom cell buffer layer by adopting chemical bath deposition, then preparing a bottom cell AZO layer by adopting a magnetron sputtering method, and finally preparing a bottom cell metal grid by adopting a thermal evaporation method to obtain the CIGS cell with the stainless steel flexible substrate;
(8) preparation of four-terminal laminated solar cell
And superposing a stainless steel flexible substrate CIGS cell and a perovskite cell based on an amorphous IZO transparent electrode to obtain the semitransparent perovskite/flexible CIGS four-end laminated solar cell.
Preferably, in the step (2), the organic solvent is DMF, DMSO, and the volume ratio is DMF: DMSO ═ 4: 1.
preferably, in the step (2), MAI, FAI, PbI2In a molar ratio of 1-x: x: 1, wherein x is more than or equal to 0 and less than or equal to 1, and the concentration of the perovskite precursor solution is 1.2-1.4 mol/L.
Preferably, in the step (2), the annealing temperature of the perovskite thin film is 100-130 ℃, and the annealing time is 10-40 min.
Preferably, in the step (5), the sputtering power in the preparation of the transparent electrode is 60-100W, and the sputtering time is 25 min.
Preferably, the thickness of the FTO layer is 500-600 nm, and SnO is selected2The thickness of the layer is 30-60 nm, the thickness of the perovskite absorption layer is 400-600 nm, the thickness of the Spiro-oMeTAD hole transport layer is 100-160 nm, and MoO3The thickness of the buffer layer is 20-30 nm, the thickness of the top battery metal grid electrode is 80-120 nm, the thickness of the Mo electrode layer is 0.5-1.5 mu m, the thickness of the CIGS light absorption layer is 1.5-2.0 mu m, and the buffer layer of the bottom battery isThe thickness of the bottom battery AZO layer is 0.03-0.05 mu m, the thickness of the bottom battery AZO layer is 0.5-1.5 mu m, and the thickness of the bottom battery metal grid is 0.08-0.12 mu m.
Compared with the prior art, the invention has the beneficial effects that:
1) the high-quality amorphous a-IZO transparent electrode new material prepared by adopting a soft sputtering method at a low temperature is used as a transparent electrode, the damage of sputtered atoms to a substrate can be effectively relieved, the excellent photoelectric property can be shown, the light transmittance at near infrared short wavelength is 85%, and the resistivity is 4.18 multiplied by 10-4Omega cm, mobility of 19.9cm2·v-1·s-1The carrier concentration is 7.46 x 1020cm-3。
2) According to the semitransparent perovskite battery prepared by the invention, MA1-xFAxPbI3 is used as a perovskite light absorption layer, the band gap is 1.5-1.7ev, and meanwhile, a transparent electrode is adopted to replace a metal electrode, so that near infrared light which cannot be absorbed by the perovskite solar battery can be transmitted through the battery and absorbed by other batteries; experiments prove that the novel semitransparent perovskite battery prepared by the preparation method successfully has the photoelectric efficiency of 15.74 percent in the first batch of batteries, shows good long-term stability and wide application range, and can be effectively applied to equipment such as a top battery of a laminated battery, a transparent power generation window and the like.
3) The CIGS solar cell is prepared by using the portable stainless steel flexible substrate, and compared with a rigid substrate, the flexible substrate is more portable and flexible and is more widely applied.
4) The invention improves the photoelectric conversion efficiency of the stainless steel flexible CIGS solar cell by using the low-cost semitransparent perovskite device as the top cell of the laminated cell, and the efficiency is improved from 15.69% to 21.03%.
5) The preparation method has the characteristics of simple preparation process, low cost, repeatable processing and the like.
Drawings
Fig. 1 is a sectional view and an actual view of a perovskite cell based on an amorphous IZO transparent electrode in embodiment 1 of the present invention;
fig. 2 is a J-V curve of a perovskite cell based on an amorphous IZO transparent electrode in example 1 of the present invention;
fig. 3 is a J-V curve of a stainless steel flexible substrate CIGS cell in example 1 of the present invention;
fig. 4 is a schematic diagram of a translucent perovskite/flexible CIGS four-terminal tandem solar cell in example 1 of the present invention;
FIG. 5 is a J-V curve of a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell in example 1 of the present invention;
FIG. 6 is a graph showing the film transmittance of amorphous a-IZO films having different high transmittances in examples 1 to 5 of the present invention;
FIG. 7 is a graph showing the carrier concentration and resistivity of amorphous a-IZO thin films having different high transmittances in examples 1 to 5 of the present invention;
fig. 8 is a graph showing the mobility and hall coefficient of amorphous a-IZO thin films with different high transmittances in examples 1-5 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A semitransparent perovskite/flexible CIGS four-end laminated solar cell comprises a stainless steel flexible substrate CIGS cell and a perovskite cell based on an amorphous IZO transparent electrode, wherein the stainless steel flexible substrate CIGS cell comprises a cell stainless steel flexible lining body, a Mo electrode layer, a CIGS light absorption layer (copper indium gallium tin), a bottom cell buffer layer, a bottom cell AZO layer and a bottom cell metal grid which are sequentially stacked from bottom to top, and the cell comprises a top cell glass lining body, an FTO layer, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer, a top cell buffer layer, a top cell TCO layer and a top cell metal grid.
A preparation method of a semitransparent perovskite/flexible CIGS four-end laminated solar cell comprises the following steps:
1. preparation of perovskite battery based on amorphous IZO transparent electrode
(1) Cleaning a film substrate: cutting FTO coating glass into small blocks of 20 x 15mm, paving zinc powder on the surface of a 5 x 15mm area on one side, dripping HCl solution, removing the FTO coating by utilizing the reactive etching between HCl and the zinc powder to expose a glass substrate, after the etching is finished, ultrasonically cleaning the substrate for 20min by using deionized water containing a detergent, acetone and absolute ethyl alcohol in sequence, and after each ultrasonic treatment, washing with the deionized water and N2And (5) drying. And finally, treating for 20min by using an ultraviolet-ozone cleaning machine to obtain the clean FTO conductive glass.
(2) Preparing an electron transport layer: SnO2Diluting the 15 wt% aqueous colloidal dispersion with deionized water, wherein the dilution ratio is 1: and 6, placing the diluent on a constant-temperature stirring table, stirring at normal temperature for 40 minutes, then spin-coating the diluent on a glass substrate containing FTO, controlling the rotating speed of a spin coater to be 3000rpm for 30s, and placing the glass substrate on a constant-temperature heating table at 150 ℃ for annealing for 30min after spin-coating.
(3) Preparation of perovskite light absorption layer: mixing MAI, FAI and PbI2The powder was dissolved in 800. mu.L of DMF (N, N-dimethylformamide) and 200. mu.L of DMSO (dimethyl sulfoxide) to give yellow MA at a concentration of 1.4mol/L0.85FA0.15PbI3A perovskite precursor solution. Putting the substrate with the electronic transmission layer in a spin coating manner on a spin coater, wherein the rotating speed is 1000rpm, and the time is 10 s; at the high speed of 4000rpm for 30s, 110 μ L of ethyl acetate is dripped at the 10 th s of high-speed rotation, and after the completion of the spin coating, the substrate is placed on a constant-temperature heating table at the temperature of 110 ℃ for annealing for 20 min.
(4) Preparing a hole transport layer: the spin coater was adjusted to 4000rpm for 30 seconds, a drop of Spiro-OMeTAD solution was added dropwise during rotation, the other 5mm area of the etch was wiped off with DMF without annealing, and the mixture was left in a drying cabinet for oxidation overnight.
(5) Preparing a top cell buffer layer: 15mg of MoO are weighed3Placing the powder on a tungsten boat of a thermal evaporation coating apparatus, placing the substrate in the coating apparatus, and vacuumizing to 3 × 10-4PaHeating to MoO3Uniformly vapor-deposited on a substrate and finally evaporated MoO3The thickness of (A) is about 20 to 30 nm.
(6) Preparation of a transparent electrode: will evaporate with MoO3The substrate is placed in a magnetron sputtering instrument and is vacuumized to 3 multiplied by 10- 4And Pa, sputtering a layer of high-light-transmittance amorphous a-IZO film as a transparent electrode of the top cell by adopting an RF-magnetron sputtering coating technology, adjusting the sputtering power to be 60W, controlling the flow of argon to be 50sccm, and sputtering for 25 min.
The preparation method of the high-transmittance amorphous a-IZO film comprises the following steps:
A. cutting common float glass into 1.5 × 1.5cm, scrubbing with detergent, sequentially adding into acetone and ethanol, ultrasonic treating for 20min, washing with deionized water, blow-drying with nitrogen, drying on a constant temperature heating table at 110 deg.C, and ozone for 15 min.
B. Putting the cleaned glass substrate into a JGP-450A type high vacuum three-target magnetron sputtering coating machine, and vacuumizing to 3 x 10-4And adjusting the power to 60W, controlling the nitrogen flow to be 50sccm, sputtering for 25min, and taking out a sample after coating.
(7) Preparing an Ag grid: putting the substrate into a designed mask plate, putting the mask plate into a thermal evaporation coating instrument, putting Ag particles into a tungsten boat, and vacuumizing to 3 multiplied by 10-4Pa, starting heating evaporation with an evaporation rate of
The thickness of the finally evaporated Ag is about 100-120nm, and the perovskite battery based on the amorphous IZO transparent electrode is obtained.
FIG. 1a is a cross-sectional view of a perovskite cell based on amorphous IZO transparent electrode, from bottom to top, respectively FTO transparent conductive thin film/SnO2/MA0.85FA0.15PbI3/Spiro-OMeTAD/MoO3and/IZO. Fig. 1b is a physical representation of a semi-transparent perovskite solar cell, from which it can be seen that the cell has a high transmittance. Fig. 2 is a J-V curve of a perovskite cell based on an amorphous IZO transparent electrode, which finally achieves a 15.74% photoelectric conversion efficiency.
2. Preparation of CIGS cell with stainless steel flexible substrate
Placing the stainless steel flexible substrate into a magnetron sputtering coating instrument, and vacuumizing to 3 multiplied by 10-4Pa, sputtering Mo metal electrode, preparing a CIGS light absorption layer on the prepared substrate by adopting a binary coevaporation method, then preparing a CdS buffer layer by adopting chemical bath deposition, then preparing an AZO transparent conductive film by adopting a magnetron sputtering method, finally placing the sample in a thermal evaporation coating instrument, and vacuumizing to 3 multiplied by 10-4Pa, evaporation rate of
The thickness of the final evaporated Ag is about 80-100 nm.
Fig. 3 is a J-V curve of a stainless steel flexible substrate CIGS solar cell, which finally achieves a 15.69% photoelectric conversion efficiency.
3. Preparation of semitransparent perovskite/flexible CIGS four-end laminated solar cell
And superposing the perovskite cell based on the amorphous IZO transparent electrode and a stainless steel flexible substrate CIGS cell to obtain the semitransparent perovskite/flexible CIGS four-end laminated solar cell.
Figure 4 shows a schematic diagram of a translucent perovskite/flexible CIGS four-terminal tandem solar cell structure comprising a top cell translucent perovskite solar cell and a bottom cell stainless steel flexible CIGS solar cell, when solar energy is irradiated onto the four-terminal tandem cell, ultraviolet and visible light is absorbed by the perovskite, while near infrared light is transmitted through the translucent perovskite cell and thus absorbed by the flexible CIGS solar cell. Fig. 5 shows the photovoltaic performance of the semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell, with a 5.29% photoelectric conversion efficiency obtained with the filtered CIGS cell, and thus a 21.03% photoelectric conversion efficiency finally obtained with the four-terminal tandem cell.
Example 2
This example a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell was prepared in the same manner as in example 1, except that the sputtering power in step (6) was 65W.
Example 3
This example a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell was prepared in the same manner as in example 1, except that the sputtering power in step (6) was 70W.
Example 4
This example a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell was prepared in the same manner as in example 1, except that the sputtering power in step (6) was 80W.
Example 5
This example a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell was prepared in the same manner as in example 1, except that the sputtering power in step (6) was 100W.
In examples 1 to 5, the transmittance, carrier concentration, mobility and resistivity of IZO films of different sputtering powers, the transmittance of IZO films and hall test parameters were shown in fig. 1 and 2.
FIG. 6 shows the transmittance of the films with different sputtering powers, and it can be seen from the graph that the transmittance of the films reaches 80% between 500 and 1200nm, and the transmittance of the films is 85% at the near-infrared short-wave end. FIGS. 7-8 show the electrical properties of IZO film under different sputtering powers, and it can be seen from the graphs that the highest mobility of the film reached 19.9cm when the sputtering power was 80W2·v-1·s-1。
The foregoing is merely exemplary and illustrative of the present invention and various modifications, additions and substitutions may be made by those skilled in the art to the specific embodiments described without departing from the scope of the present invention as defined in the accompanying claims.
Claims (8)
1. A semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell, characterized by: the perovskite cell based on the amorphous IZO transparent electrode comprises a top cell glass lining body, an FTO layer, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer, a top cell buffer layer, a top cell TCO layer and a top cell metal grid.
2. A semi-transparent perovskite/flexible CIGS four-terminal laminate solar cell as claimed in claim 1, wherein: the electron transport layer is SnO2The perovskite light absorption layer material is MA1-xFAxPbI3Wherein x is more than or equal to 0 and less than or equal to 1, the hole transport layer of the semitransparent top cell is Spiro-OMeTAD, and the buffer layer of the top cell is MoO3The TCO layer of the top battery is IZO, and the metal grid of the bottom battery and the metal grid of the top battery are both Ag grids.
3. A method of fabricating a semi-transparent perovskite/flexible CIGS four-terminal stacked solar cell according to any of claims 1-2, comprising the steps of:
(1) preparation of the Electron transport layer
SnO2Diluting the 15 wt% aqueous colloidal dispersion with deionized water, wherein the dilution ratio is 1: 6, placing the diluent on a constant-temperature stirring table, stirring for 40 minutes, spin-coating the diluent on a glass substrate containing an FTO layer, and placing the glass substrate on a heating table for annealing for 30min after spin-coating;
(2)MA1-xFAxPbI3preparation of perovskite absorption layer
Mixing MAI, FAI and PbI2Mixing and dissolving in an organic solvent, stirring for 3-4 h at 70 ℃ to obtain MA with a certain concentration1-xFAxPbI3A perovskite precursor solution; then spin-coating the obtained precursor solution on a substrate, and placing the substrate on a constant-temperature heating table for annealing after the spin-coating is finished;
(3) preparation of hole transport layer
Dissolving acetonitrile solutions of Spiro-OMeTAD, 4-tert-butylpyridine and bis (trifluoromethanesulfonyl) imino in chlorobenzene, placing the prepared solution on a constant-temperature heating table, stirring for 1h, and then spin-coating the solution on a substrate;
(4)MoO3preparation of buffer layer
MoO using thermal evaporation3Evaporating the buffer layer on the substrate to be used as a hole transport layer;
(5) preparation of high-transmittance amorphous a-IZO transparent electrode in high-translucence battery
Will be evaporated with MoO3The substrate is placed in a magnetron sputtering instrument and is vacuumized to 3 multiplied by 10-4Pa, sputtering a layer of high-light-transmittance amorphous a-IZO film as a transparent electrode of the top cell by adopting an RF-magnetron sputtering coating technology;
(6) preparation of silver grid in semitransparent battery
Putting the substrate into a designed mask plate, putting the mask plate into a thermal evaporation coating instrument, putting Ag particles into a tungsten boat, and vacuumizing to 3 multiplied by 10-4Pa, evaporating and plating a silver grid on the a-IZO film by adopting a thermal evaporation method to improve the collection of current, and obtaining the perovskite battery based on the amorphous IZO transparent electrode;
(7) preparation of CIGS cell with stainless steel flexible substrate
Placing a stainless steel flexible substrate in a magnetron sputtering coating instrument, sputtering a Mo electrode layer, preparing a CIGS light absorption layer by adopting a binary co-evaporation method, then preparing a bottom cell buffer layer by adopting chemical bath deposition, then preparing a bottom cell AZO layer by adopting a magnetron sputtering method, and finally preparing a bottom cell metal grid by adopting a thermal evaporation method to obtain the CIGS cell with the stainless steel flexible substrate;
(8) four-terminal laminated solar cell preparation
And superposing a stainless steel flexible substrate CIGS cell and a perovskite cell based on an amorphous IZO transparent electrode to obtain the semitransparent perovskite/flexible CIGS four-end laminated solar cell.
4. A method of fabricating a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell as claimed in claim 3, wherein: in the step (2), the organic solvent is DMF or DMSO, and the volume ratio of DMF to DMSO is: DMSO ═ 4: 1.
5. a method of fabricating a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell as claimed in claim 3, wherein: in the step (2), MAI, FAI and PbI2In a molar ratio of 1-x: x: 1, wherein x is more than or equal to 0 and less than or equal to 1, and the concentration of the perovskite precursor solution is 1.2-1.4 mol/L.
6. A method of fabricating a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell as claimed in claim 3, wherein: in the step (2), the annealing temperature of the perovskite thin film is 100-130 ℃, and the annealing time is 10-40 min.
7. A method of fabricating a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell as claimed in claim 3, wherein: in the step (5), the sputtering power in the preparation of the transparent electrode is 60-100W, and the sputtering time is 25 min.
8. A method of fabricating a semi-transparent perovskite/flexible CIGS four-terminal tandem solar cell as claimed in claim 3, wherein: the thickness of the FTO layer is 500-600 nm, and SnO2The thickness of the layer is 30-60 nm, the thickness of the perovskite absorption layer is 400-600 nm, the thickness of the Spiro-oMeTAD hole transport layer is 100-160 nm, and MoO3The thickness of the buffer layer is 20-30 nm, the thickness of the top battery metal grid is 80-120 nm, the thickness of the Mo electrode layer is 0.5-1.5 mu m, the thickness of the CIGS light absorption layer is 1.5-2.0 mu m, the thickness of the bottom battery buffer layer is 0.03-0.05 mu m, the thickness of the bottom battery AZO layer is 0.5-1.5 mu m, and the thickness of the bottom battery metal grid is 0.08-0.12 mu m.
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| CN115207143B (en) * | 2022-06-02 | 2023-10-31 | 西安电子科技大学 | perovskite/Si two-end mechanical laminated solar cell of MXene interconnection layer and preparation method thereof |
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