CN103811582A - Method of employing ion implantation to prepare ultra low surface doping concentration low sheet resistance silicon solar cell - Google Patents
Method of employing ion implantation to prepare ultra low surface doping concentration low sheet resistance silicon solar cell Download PDFInfo
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- CN103811582A CN103811582A CN201210445413.1A CN201210445413A CN103811582A CN 103811582 A CN103811582 A CN 103811582A CN 201210445413 A CN201210445413 A CN 201210445413A CN 103811582 A CN103811582 A CN 103811582A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 61
- 239000010703 silicon Substances 0.000 title claims abstract description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000005468 ion implantation Methods 0.000 title abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 238000007650 screen-printing Methods 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 36
- 238000002513 implantation Methods 0.000 claims description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000007943 implant Substances 0.000 claims description 7
- 235000008216 herbs Nutrition 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method of employing ion implantation to prepare an ultra low surface doping concentration low sheet resistance silicon solar cell, so cleaning velvet can be carried out on a surface of a P type monocrystalline wafer; the method comprises the steps of: employing the ion implantation method to inject phosphor element on one surface of the velvet monocrystalline wafer so as to form a PN junction; carrying out high temperature annealing and growing oxide layer on the monocrystalline wafer; continuously depositing a passivation/anti-reflection film on a N type surface; screen printing and drying a positive electrode and a back side electrode; carrying out sintering processing preparation so as to obtain the ultra low surface doping concentration low sheet resistance silicon solar cell. Compared with the prior art, the method is good in controllability, simple in process, flat in a junction surface, flexible in technology, and good in uniformity and repeatability.
Description
Technical field
The present invention relates to a kind of method of preparing silicon solar cell, especially relate to a kind of Implantation and make the low square resistance silicon solar cell method of ultralow surface doping concentration.
Background technology
In recent years, under the stimulation of the multiple factors such as energy crisis and climate change, grew continuously and fast in global photovoltaic market.Since can be used for the civil solar battery of business and putting goods on the market, particularly enter 21st century, the application quantity increasing degree of solar cell remains at fair speed.
Solar cell utilizes the characteristic electron of semi-conducting material, and sunlight is directly converted to electric energy.At present, conventional business crystal-silicon solar cell processing technology routine is as follows: first carry out supplied materials sorting, then the damage layer of surface of crystalline silicon is cleaned up, and carry out making herbs into wool and reduce surface of crystalline silicon reflectivity to form certain matte; Carry out again High temperature diffusion and make PN junction; Adopt the diffusingsurface cvd nitride silicon thin film of PECVD method at battery, play the effect of anti-reflection and passivation; Finally adopt the mode of silk screen printing to prepare metal electrode and back surface field, after sintering, make crystalline silicon solar cell piece.The formation of the heart of solar cell---PN junction is played conclusive effect for battery conversion efficiency.Photovoltaic industry forms the main high temperature pipe furnace of the technology technology of PN junction, and tubular type diffusion technique can meet the manufacture of conventional batteries production, and the industry average level that the common monocrystalline technique of current employing tubular type diffusion technique reaches is 18.3%.Tubular type diffusion technique is in the time preparing the PN junction of silicon solar cell, can form higher ' dead layer ' of surface doping concentration, and unactivated P impurity can form lattice defect in interface, the charge carrier that therefore part incident light produces can be compound at fault location, and conversion efficiency is had a negative impact.For the feature of this tubular type diffusion technique, the PN junction emitter of crystal silicon solar battery is towards high square resistance, super shallow junction future development at present.But corresponding high square resistance is to guarantee the fill factor, curve factor of battery, front electrode must increase grid line number, thereby increases the shading-area of battery front surface, and increases the compound of silver-silicon electrode region, thereby has offset the castering action of high square resistance, super shallow junction.In addition, super shallow junction more easily burns, and makes sintering window become very narrow.At present, adopt the mode that spreads+anti-carve erosion can reach the object of low surface concentration, but this scheme has increased processing procedure and cost, and sheet resistance is higher, the more difficult control of uniformity.For monocrystalline silicon high-efficient battery, for adapting to new battery structure and technique, need to change PN junction preparation method.
Summary of the invention
For the problems referred to above, an object of the present invention is after Implantation, utilize annealing to activate impurity completely, make interface defect density very low, providing a kind of is not increasing the method for preparing low square resistance emitter under the combining case of interface, and it can be in the case of not affecting the short wave response of solar cell, reduce front gate line quantity, thereby reduce the shading-area of battery front surface, and reduce the compound of silver-silicon electrode region, improve the conversion efficiency of single crystal silicon solar cell.
Another object of the present invention is to utilize the degree of depth of ion implantation doping and the feature that concentration can accurately be controlled and the rear dark PN junction of annealing can not increase the compound feature of the few son in interface, utilize the process of impurity in the passive propelling of annealing process, a kind of method of ultralow surface concentration PN junction emitter is provided, can reduce recombination-rate surface, improve the short wave response of solar cell, improve the conversion efficiency of single crystal silicon solar cell.
Another object of the present invention is to provide a kind of stable method of preparing low square resistance, ultralow doping surfaces concentration emitter single crystal silicon solar cell, and it does not need complicated diffusion technology, can greatly improve technology stability.
Another object of the present invention is to provide one and prepares ultralow doping surfaces concentration emitter single crystal silicon solar cell, does not need High temperature diffusion+anti-carve etching technique, can greatly reduce production costs, and improves technology stability simultaneously.
Another object of the present invention is to provide one and prepares low square resistance, ultralow doping surfaces concentration emitter single crystal silicon solar cell, do not need the High temperature diffusion technique of 800 ℃-900 ℃, can greatly reduce the discharge capacity of waste gas in energy consumption and production process, be a kind of environment-friendly type method of preparing solar cell PN junction.
Object of the present invention can be achieved through the following technical solutions:
Implantation is made the low square resistance silicon solar cell method of ultralow surface doping concentration, comprises the following steps:
(1) cleaning and texturing is carried out in the surface of p type single crystal silicon sheet;
(2) one side of the monocrystalline silicon piece after adopting the method for Implantation to making herbs into wool is injected P elements, forms PN junction;
(3) monocrystalline silicon piece is carried out to high annealing the oxide layer of growing;
(4) continue deposition one deck passivation/antireflective film on N-type surface;
(5) silk screen printing positive electrode and backplate oven dry;
(6) make through sintering processes the low square resistance silicon solar cell that obtains ultralow surface doping concentration.
Cleaning and texturing described in step (1) is made the surface that the matte that obtains forms on pyramid, inverted pyramid or the pit shape structure of 0.1～100 micron for size.
Step (2) specifically comprises the following steps: silicon chip surface is fully cleaned and (comprise that employing ammoniacal liquor/hydrogen peroxide cleans; HCl/HF cleans) after, use ion implantor to divide 1～8 scanning to implant silicon chip with the Implantation Energy of 5～30KeV in P ion, cleaning silicon chip surface subsequently, after annealing, silicon chip sheet resistance is controlled at 50～90 Ω .cm.
Clean for the first time and adopt ammoniacal liquor/hydrogen peroxide, HCl/HF fully to clean silicon chip surface.
Clean for the second time and adopt ammoniacal liquor/hydrogen peroxide, sulfuric acid/hydrogen peroxide, hydrochloric acid/hydrogen peroxide, hydrofluoric acid to clean silicon chip surface.
Implantation is a kind of method that semiconductor is adulterated.Impurity ionization is become to ion and is focused into ion beam, in electric field, accelerate and obtain after high kinetic energy, be injected in silicon and realize doping.The acceptor or the donor impurity major part that are injected in semiconductor all rest on interstitial site place, through the annealing in process of proper temperature, can make the whole or most of of implanted dopant atom enter displacement position and discharge charge carrier from interstitial site, thereby change semi-conductive electrical characteristics; Annealing in process also can reduce implant damage simultaneously.The present invention has utilized the high controllability of ion implantation, and by high annealing, makes to form in p type single crystal silicon sheet predetermined low square resistance, ultralow doping surfaces concentration emitter.
The temperature of the high annealing described in step (3) is 850～900 ℃.
The temperature of the sintering processes described in step (6) is 850～1000 ℃.
Compared with prior art, the present invention has the following advantages:
1, controllability is good; Ion implantation is CONCENTRATION DISTRIBUTION and the doping depth of controlled doping accurately, thereby goes for the requirement of low square resistance, ultralow doping surfaces concentration emitter doping concentration distribution;
2, technique is simple: in invention, only coordinate high annealing by injection, reduced the cost of manufacture of low square resistance, ultralow surface concentration emitter silicon battery;
4, knot face is more smooth: it is comparatively smooth that the prepared PN junction of ion implantation that this invention adopts is tied face, is conducive to improve the electrical property of selective emitter battery;
5, technique is flexible: can penetrate surface film and be injected in substrate below, also can adopt multiple material to make masking film, as SiO
2, SiN
xor photoresist etc.;
6, uniformity and reproducible: this has guaranteed the product quality of silicon solar cell in large-scale production and application.
Accompanying drawing explanation
Fig. 1 is the structural representation that the present invention makes the silicon solar cell obtaining.
In figure, 1 is that silver-colored positive electrode, 2 is SiN
xfilm, 3 is SiO
2film, 4 is that N-shaped silicon, 5 is p-type silicon.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Implantation is made the low square resistance silicon solar cell method of ultralow surface doping concentration, comprises the following steps:
(1) cleaning and texturing is carried out in the surface of p type single crystal silicon sheet, the surface that the matte that making obtains forms on pyramid, inverted pyramid or the pit shape structure of 0.1～100 micron for size;
(2) one side of the monocrystalline silicon piece after adopting the method for Implantation to making herbs into wool is injected P elements, forms PN junction, specifically comprises the following steps: silicon chip surface is fully cleaned and (comprise that employing ammoniacal liquor/hydrogen peroxide cleans; HCl/HF cleans) after, use ion implantor that P ion is implanted to silicon chip with the Implantation Energy scanning of 30KeV, can adopt subsequently cleaning step (comprising employing ammoniacal liquor/hydrogen peroxide, sulfuric acid/hydrogen peroxide, hydrochloric acid/hydrogen peroxide, hydrofluoric acid) cleaning silicon chip surface, after annealing, silicon chip sheet resistance is controlled at 50 Ω .cm.Implantation is a kind of method that semiconductor is adulterated.Impurity ionization is become to ion and is focused into ion beam, in electric field, accelerate and obtain after high kinetic energy, be injected in silicon and realize doping.The acceptor or the donor impurity major part that are injected in semiconductor all rest on interstitial site place, through the annealing in process of proper temperature, can make the whole or most of of implanted dopant atom enter displacement position and discharge charge carrier from interstitial site, thereby change semi-conductive electrical characteristics; Annealing in process also can reduce implant damage simultaneously.The present invention has utilized the high controllability of ion implantation, and by high annealing, makes to form in p type single crystal silicon sheet predetermined low square resistance, ultralow doping surfaces concentration emitter.
(3) controlling temperature is 850 ℃, and monocrystalline silicon piece is carried out to high annealing the oxide layer of growing;
(4) continue deposition one deck passivation/antireflective film on N-type surface;
(5) silk screen printing positive electrode and backplate oven dry;
(6) controlling temperature is 850 ℃, makes the low square resistance silicon solar cell that obtains ultralow surface doping concentration through sintering processes, makes the structure of the silicon solar cell obtaining as shown in Figure 1, comprises top-down SiN
xfilm 2, SiO
2film 3, N-shaped silicon 4 and p-type silicon 5, wherein N-shaped silicon 4 is as the emitter of the Implantation of silicon solar cell, and p-type silicon 5 is as the substrate silicon of silicon solar cell, at SiN
xthe silver-colored positive electrode 1 that has silk screen printing to obtain on film 2.
Implantation is made the low square resistance silicon solar cell method of ultralow surface doping concentration, comprises the following steps:
(1) cleaning and texturing is carried out in the surface of p type single crystal silicon sheet, the surface that the matte that making obtains forms on pyramid, inverted pyramid or the pit shape structure of 0.1～100 micron for size;
(2) one side of the monocrystalline silicon piece after adopting the method for Implantation to making herbs into wool is injected P elements, forms PN junction, specifically comprises the following steps: silicon chip surface is fully cleaned and (comprise that employing ammoniacal liquor/hydrogen peroxide cleans; HCl/HF cleans) after, use ion implantor to divide 8 scanning to implant silicon chip with the Implantation Energy of 5KeV in P ion, can adopt subsequently cleaning step (comprising employing ammoniacal liquor/hydrogen peroxide, sulfuric acid/hydrogen peroxide, hydrochloric acid/hydrogen peroxide, hydrofluoric acid) cleaning silicon chip surface, after annealing, silicon chip sheet resistance is controlled at 90 Ω .cm.Implantation is a kind of method that semiconductor is adulterated.Impurity ionization is become to ion and is focused into ion beam, in electric field, accelerate and obtain after high kinetic energy, be injected in silicon and realize doping.The acceptor or the donor impurity major part that are injected in semiconductor all rest on interstitial site place, through the annealing in process of proper temperature, can make the whole or most of of implanted dopant atom enter displacement position and discharge charge carrier from interstitial site, thereby change semi-conductive electrical characteristics; Annealing in process also can reduce implant damage simultaneously.The present invention has utilized the high controllability of ion implantation, and by high annealing, makes to form in p type single crystal silicon sheet predetermined low square resistance, ultralow doping surfaces concentration emitter.
(3) controlling temperature is 900 ℃, and monocrystalline silicon piece is carried out to high annealing the oxide layer of growing;
(4) continue deposition one deck passivation/antireflective film on N-type surface;
(5) silk screen printing positive electrode and backplate oven dry;
(6) controlling temperature is 1000 ℃, makes the low square resistance silicon solar cell that obtains ultralow surface doping concentration through sintering processes.
Adopt metric system velvet figures method, due to matte pyramid size～2um, after HCl/HF cleans, use ion implantor to implant the P of 2.8E15 dosage with the Implantation Energy of 15KeV, subsequently after ammoniacal liquor/hydrogen peroxide cleanings-HCl cleaning-HF cleaning, by silicon chip at 5～20%O
2in the oxidizing atmosphere of concentration, with 830～860 ℃ of annealing 10～20min, (after annealing, sheet resistance is 80～85 Ω/sq, and ECV test shows that the surface concentration of phosphorus impurities is < 3E20/cm
3, junction depth is 0.3～0.5um), completing the SiNx film that uses PECVD plating～80nm thickness after annealing, finally adopt silk screen printing to complete and metallize and sintering, after completing, battery efficiency can reach 19.34% transformation efficiency.
Claims (7)
1. Implantation is made the low square resistance silicon solar cell method of ultralow surface doping concentration, it is characterized in that, the method comprises the following steps:
(1) cleaning and texturing is carried out in the surface of p type single crystal silicon sheet;
(2) one side of the monocrystalline silicon piece after adopting the method for Implantation to making herbs into wool is injected P elements, forms PN junction;
(3) monocrystalline silicon piece is carried out to high annealing the oxide layer of growing;
(4) continue deposition one deck passivation/antireflective film on N-type surface;
(5) silk screen printing positive electrode and backplate oven dry;
(6) make through sintering processes the low square resistance silicon solar cell that obtains ultralow surface doping concentration.
2. Implantation according to claim 1 is made the low square resistance silicon solar cell method of ultralow surface doping concentration, it is characterized in that, the cleaning and texturing described in step (1) is made the surface that the matte that obtains forms on pyramid, inverted pyramid or the pit shape structure of 0.1～100 micron for size.
3. Implantation according to claim 1 is made the low square resistance silicon solar cell method of ultralow surface doping concentration, it is characterized in that, step (2) specifically comprises the following steps: after silicon chip surface is fully cleaned, use ion implantor to divide 1～8 scanning to implant silicon chip with the Implantation Energy of 5～30KeV in P ion, cleaning silicon chip surface subsequently, after annealing, silicon chip sheet resistance is controlled at 50～90 Ω .cm.
4. Implantation according to claim 3 is made the low square resistance silicon solar cell method of ultralow surface doping concentration, it is characterized in that, cleans for the first time and adopts ammoniacal liquor/hydrogen peroxide, HCl/HF fully to clean silicon chip surface.
5. Implantation according to claim 3 is made the low square resistance silicon solar cell method of ultralow surface doping concentration, it is characterized in that, clean for the second time and adopt ammoniacal liquor/hydrogen peroxide, sulfuric acid/hydrogen peroxide, hydrochloric acid/hydrogen peroxide, hydrofluoric acid to clean silicon chip surface.
6. Implantation according to claim 1 is made the low square resistance silicon solar cell method of ultralow surface doping concentration, it is characterized in that, the temperature of the high annealing described in step (3) is 850～900 ℃.
7. Implantation according to claim 1 is made the low square resistance silicon solar cell method of ultralow surface doping concentration, it is characterized in that, the temperature of the described sintering processes of step (6) is 850～1000 ℃.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966744A (en) * | 2015-07-07 | 2015-10-07 | 中国科学院上海微系统与信息技术研究所 | Crystalline silicon solar cell and preparation method thereof |
| CN106409978A (en) * | 2016-11-23 | 2017-02-15 | 中利腾晖光伏科技有限公司 | Preparation method of P-type single crystal solar cell |
| CN106531842A (en) * | 2016-11-14 | 2017-03-22 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar battery |
| CN108231954A (en) * | 2018-01-03 | 2018-06-29 | 维科诚（苏州）光伏科技有限公司 | A kind of preparation method of solar cell |
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| US20110139230A1 (en) * | 2010-06-03 | 2011-06-16 | Ajeet Rohatgi | Ion implanted selective emitter solar cells with in situ surface passivation |
| CN102157585A (en) * | 2011-02-28 | 2011-08-17 | 中山大学 | Method for manufacturing uniform shallow emitter solar cell |
| CN102222726A (en) * | 2011-05-13 | 2011-10-19 | 晶澳（扬州）太阳能科技有限公司 | Technology for manufacturing interlaced back contact (IBC) crystalline silicon solar battery with ion implantation |
-
2012
- 2012-11-08 CN CN201210445413.1A patent/CN103811582A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110139230A1 (en) * | 2010-06-03 | 2011-06-16 | Ajeet Rohatgi | Ion implanted selective emitter solar cells with in situ surface passivation |
| CN102157585A (en) * | 2011-02-28 | 2011-08-17 | 中山大学 | Method for manufacturing uniform shallow emitter solar cell |
| CN102222726A (en) * | 2011-05-13 | 2011-10-19 | 晶澳（扬州）太阳能科技有限公司 | Technology for manufacturing interlaced back contact (IBC) crystalline silicon solar battery with ion implantation |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966744A (en) * | 2015-07-07 | 2015-10-07 | 中国科学院上海微系统与信息技术研究所 | Crystalline silicon solar cell and preparation method thereof |
| CN104966744B (en) * | 2015-07-07 | 2017-06-16 | 中国科学院上海微系统与信息技术研究所 | Crystal-silicon solar cell and preparation method thereof |
| CN106531842A (en) * | 2016-11-14 | 2017-03-22 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar battery |
| CN106409978A (en) * | 2016-11-23 | 2017-02-15 | 中利腾晖光伏科技有限公司 | Preparation method of P-type single crystal solar cell |
| CN108231954A (en) * | 2018-01-03 | 2018-06-29 | 维科诚（苏州）光伏科技有限公司 | A kind of preparation method of solar cell |
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Application publication date: 20140521 |