CN203839387U - N-type crystalline silicon double-sided cell - Google Patents

N-type crystalline silicon double-sided cell Download PDF

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Publication number
CN203839387U
CN203839387U CN201420253264.3U CN201420253264U CN203839387U CN 203839387 U CN203839387 U CN 203839387U CN 201420253264 U CN201420253264 U CN 201420253264U CN 203839387 U CN203839387 U CN 203839387U
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layer
battery
silicon substrate
cell
type
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高艳涛
张斌
邢国强
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Altusvia Energy Taicang Co Ltd
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Altusvia Energy Taicang Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The utility model discloses an N-type crystalline silicon double-sided cell and relates to the technical field of solar cells, which comprises an N-type silicon substrate, a boron doping layer, a cell positive pole, an alumina passivation layer, silicon nitride antireflection layers, an ion implantation phosphor doping layer, a silicon nitride passivation and antireflection layer, and a cell negative pole. The upper and lower surfaces of the N-type silicon substrate are respectively provided with the cell positive pole and the cell negative pole. The boron doping layer is arranged under the cell positive pole. The upper surface of the N-type silicon substrate is provided with the alumina passivation layer. The surface of the alumina passivation layer is provided with a first silicon nitride antireflection layer. The lower surface of the N-type silicon substrate is provided with the ion implantation phosphor doping layer. The surface of the ion implantation phosphor doping layer is provided with a second silicon nitride antireflection layer. According to the technical scheme of the N-type crystalline silicon double-sided cell provided by the utility model, the stability of the cell is improved, and the absorption of short waves is attenuated. The blue-light response is enhanced and the short-circuit current density of the cell is increased. Meanwhile, the cell efficiency is improved. Therefore, the N-type crystalline silicon double-sided cell is very practical.

Description

N-type crystalline silicon double-side cell
Technical field
The utility model belongs to technical field of solar batteries, is specifically related to a kind of N-type crystalline silicon double-side cell.
Background technology
Double-side cell can utilize sunlight more fully, not only the sunlight of positive incident also has the scattered light at the back side etc., improve the energy output of battery, this kind of battery is more suitable for architecture-integral, and the application such as at right angle setting, but traditional double-side cell complex structure, preparation cost is high, makes double-side cell move towards on a large scale market and has run into bottleneck.
Utility model content
Utility model object: the purpose of this utility model is to provide a kind of N-type crystalline silicon double-side cell, the stability of battery is improved, reduced the absorption to shortwave simultaneously, improved blue response, the short-circuit current density that has improved battery, has promoted battery efficiency.
Technical scheme: for realizing above-mentioned utility model object, the utility model adopts following technical scheme:
N-type crystalline silicon double-side cell, comprise positive pole, aluminium oxide passivation layer, silicon nitride antireflection layer, Implantation phosphorus doping layer, silicon nitride passivation and the antireflection layer of N-type silicon substrate, boron-dopped layer, battery, the negative pole of battery, be provided with respectively the negative pole of the Anode and battery of battery in the upper and lower surface of N-type silicon substrate, below battery anodal, boron-dopped layer be set; Be provided with aluminium oxide passivation layer at the upper surface of N-type silicon substrate, be provided with the first silicon nitride antireflection layer on the surface of aluminium oxide passivation layer; Be provided with Implantation phosphorus doping layer at the lower surface of N-type silicon substrate, be provided with the second silicon nitride antireflection layer on the surface of Implantation phosphorus doping layer.
Described N-type silicon substrate is the N-type silicon substrate of resistivity between 0.3 Ω cm～10 Ω cm.
The thickness of described aluminium oxide passivation layer is 5～20nm.
The thickness of the first described silicon nitride antireflection layer is 65～75nm, and the thickness of the second silicon nitride antireflection layer is 73～86nm.
Utility model principle: the utility model, by expanding boron at N-type silicon substrate upper surface Local Gravity And, forms the PN junction of a local, is prepared with Al on N-type substrate 2o 3, this Al 2o 3with fixed negative charge, and at Al 2o 3below N-type silicon in induce the inversion layer of P+; Al 2o 3above deposit silicon nitride antireflection layer cell backside and have heavily doped phosphorus, form back surface field, back surface field adopts SiN xthe two-sided light that can be subject to of passivation cell generates electricity, the two sides of distribution of electrodes battery.
Beneficial effect: compared with prior art, N-type crystalline silicon double-side cell of the present utility model, owing to there is no boron doped impact, stability test can be improved, reduced the absorption to shortwave simultaneously, improved blue response, the short-circuit current density that improves battery, battery efficiency gets a promotion; Utilize Al2O3 with fixed negative charge, induce a P type inversion layer at the front surface of N-type substrate, front electric field is provided, substituted original PN joint, there is good practicality.
Brief description of the drawings
Accompanying drawing 1N type crystalline silicon double-side cell structural representation.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described further.
As shown in Figure 1, N-type crystalline silicon double-side cell, comprise positive pole 3, aluminium oxide passivation layer 4, silicon nitride antireflection layer 5, Implantation phosphorus doping layer 6, silicon nitride passivation and the antireflection layer 7 of N-type silicon substrate 1, boron-dopped layer 2, battery, the negative pole 8 of battery, be provided with respectively the positive pole 3 of battery and the negative pole 8 of battery in the upper and lower surface of N-type silicon substrate 1, below the positive pole 3 of battery, boron-dopped layer 2 be set; Be provided with aluminium oxide passivation layer 4 at the upper surface of N-type silicon substrate 1, be provided with the first silicon nitride antireflection layer 5 on the surface of aluminium oxide passivation layer 4; Be provided with Implantation phosphorus doping layer 6 at the lower surface of N-type silicon substrate 1, be provided with the second silicon nitride antireflection layer 7 on the surface of Implantation phosphorus doping layer 6.
Wherein, the resistivity of N-type silicon substrate 1 at 0.3 Ω cm between 10 Ω cm.The thickness of aluminium oxide passivation layer 4 is at 5～20nm, and with 5 × 102cm -2～3 × 103cm -2fixed negative charge.The thickness of the first silicon nitride antireflection layer 5 is 65～75nm, and the thickness of the second silicon nitride antireflection layer 7 is 73～86nm.
Embodiment 1
The method of preparing N-type crystalline silicon double-side cell, comprises the following steps:
1) chemical cleaning
Be that the surperficial matte of the N-type silicon substrate of 0.3 Ω cm adopts rare NaOH or potassium hydroxide solution to prepare the light trapping structure of Pyramid on the surface of substrate to resistivity, clean with hydrochloric acid and the hydrofluoric acid of dilution subsequently, obtain the N-type silicon substrate that chemical cleaning is crossed;
2) upper surface printing boron-dopped layer
The upper surface printing boron-dopped layer of the N-type silicon substrate of crossing in chemical cleaning, the anodal cross sectional shape of the shape of this printing boron-dopped layer and battery coincide, and after printing, in the drying oven of 400 DEG C, dries, and obtains possessing the N-type silicon substrate in boron source;
3) lower surface injects phosphorus source annealing
Lower surface at the N-type silicon substrate that possesses boron source injects phosphorus source, in ion beam energy 8kev situation, and Implantation amount 1 × 15cm -2then the N-type silicon substrate that injects phosphorus source is put into annealing furnace, in the temperature range of 800 DEG C, anneal, after annealing, target sheet resistance is 40 Ω/, makes, in the boron diffusion body of falling silicon chip, to form local PN joint, the phosphorus source that active ions inject, and the silicon face damaging during to Implantation repairs, allow the phosphorus source of injecting form back surface field, obtain injecting the N-type silicon substrate in phosphorus source;
4) upper surface is prepared aluminium oxide passivation layer and the first silicon nitride antireflection layer
At 400 DEG C, adopt at the upper surface of the N-type silicon substrate that injects phosphorus source the alundum (Al2O3) that atomic deposition or PCVD thickness are 5nm, alundum (Al2O3) with negative electrical charge be 5 × 10 12cm -2, form aluminium oxide passivation layer;
Surface at aluminium oxide passivation layer adopts the first silicon nitride antireflection layer that PCVD thickness is 65nm;
5) lower surface is prepared the second silicon nitride antireflection layer
Lower surface at the N-type silicon substrate that injects phosphorus source adopts the second silicon nitride antireflection layer that PCVD thickness is 73nm;
6) prepare the negative pole of the Anode and battery of battery
The method that adopts printing is printed silver aluminium paste above the upper surface printing boron-dopped layer of battery, forms the positive pole of battery; Adopt the method for printing at the lower surface printed silver slurry of battery, form the negative pole of battery;
7) sintering
At the temperature of 700 DEG C, by step 6) battery that obtains carries out sintering in sintering furnace, allows battery and silicon form ohmic contact, obtains battery finished product.
Embodiment 2
The method of preparing N-type crystalline silicon double-side cell, comprises the following steps:
1) chemical cleaning
Be that the surperficial matte of the N-type silicon substrate of 10 Ω cm adopts rare NaOH or potassium hydroxide solution to prepare the light trapping structure of Pyramid on the surface of substrate to resistivity, clean with hydrochloric acid and the hydrofluoric acid of dilution subsequently, obtain the N-type silicon substrate that chemical cleaning is crossed;
2) upper surface printing boron-dopped layer
The upper surface printing boron-dopped layer of the N-type silicon substrate of crossing in chemical cleaning, the anodal cross sectional shape of the shape of this printing boron-dopped layer and battery coincide, and after printing, in the drying oven of 400 DEG C, dries, and obtains possessing the N-type silicon substrate in boron source;
3) lower surface injects phosphorus source annealing
Lower surface at the N-type silicon substrate that possesses boron source injects phosphorus source, in ion beam energy 15kev situation, and Implantation amount 7 × 15cm -2then the N-type silicon substrate that injects phosphorus source is put into annealing furnace, in the temperature range of 1000 DEG C, anneal, after annealing, target sheet resistance is 120 Ω/, makes, in the boron diffusion body of falling silicon chip, to form local PN joint, the phosphorus source that active ions inject, and the silicon face damaging during to Implantation repairs, allow the phosphorus source of injecting form back surface field, obtain injecting the N-type silicon substrate in phosphorus source;
4) upper surface is prepared aluminium oxide passivation layer and the first silicon nitride antireflection layer
At 400 DEG C, adopt at the upper surface of the N-type silicon substrate that injects phosphorus source the alundum (Al2O3) that atomic deposition or PCVD thickness are 20nm, alundum (Al2O3) with negative electrical charge be 5 × 10 13cm -2, form aluminium oxide passivation layer;
Surface at aluminium oxide passivation layer adopts the first silicon nitride antireflection layer that PCVD thickness is 75nm;
5) lower surface is prepared the second silicon nitride antireflection layer
Lower surface at the N-type silicon substrate that injects phosphorus source adopts the second silicon nitride antireflection layer that PCVD thickness is 86nm;
6) prepare the negative pole of the Anode and battery of battery
The method that adopts printing is printed silver aluminium paste above the upper surface printing boron-dopped layer of battery, forms the positive pole of battery; Adopt the method for printing at the lower surface printed silver slurry of battery, form the negative pole of battery;
7) sintering
At the temperature of 900 DEG C, by step 6) battery that obtains carries out sintering in sintering furnace, allows battery and silicon form ohmic contact, obtains battery finished product.
Embodiment 3
The method of preparing N-type crystalline silicon double-side cell, comprises the following steps:
1) chemical cleaning
Be that the surperficial matte of the N-type silicon substrate of 0.3 Ω cm adopts rare NaOH or potassium hydroxide solution to prepare the light trapping structure of Pyramid on the surface of substrate to resistivity, clean with hydrochloric acid and the hydrofluoric acid of dilution subsequently, obtain the N-type silicon substrate that chemical cleaning is crossed;
2) upper surface B Implanted source
The upper surface B Implanted source of the N-type silicon substrate of crossing in chemical cleaning, in ion beam energy 6kev situation, Implantation amount 1 × 14cm -2, after annealing, target sheet resistance is 40 Ω/, obtains possessing the N-type silicon substrate in boron source;
3) lower surface injects phosphorus source annealing
Lower surface at the N-type silicon substrate that possesses boron source injects phosphorus source, in ion beam energy 8kev situation, and Implantation amount 1 × 15cm -2then the N-type silicon substrate that injects phosphorus source is put into annealing furnace, in the temperature range of 800 DEG C, anneal, after annealing, target sheet resistance is 40 Ω/, makes, in the boron diffusion body of falling silicon chip, to form local PN joint, the phosphorus source that active ions inject, and the silicon face damaging during to Implantation repairs, allow the phosphorus source of injecting form back surface field, obtain injecting the N-type silicon substrate in phosphorus source;
4) upper surface is prepared aluminium oxide passivation layer and the first silicon nitride antireflection layer
At 400 DEG C, adopt at the upper surface of the N-type silicon substrate that injects phosphorus source the alundum (Al2O3) that atomic deposition or PCVD thickness are 5nm, alundum (Al2O3) with negative electrical charge be 5 × 10 12cm -2, form aluminium oxide passivation layer;
Surface at aluminium oxide passivation layer adopts the first silicon nitride antireflection layer that PCVD thickness is 65nm;
5) lower surface is prepared the second silicon nitride antireflection layer
Lower surface at the N-type silicon substrate that injects phosphorus source adopts the second silicon nitride antireflection layer that PCVD thickness is 73nm;
6) prepare the negative pole of the Anode and battery of battery
The method that adopts printing is printed silver aluminium paste above the upper surface printing boron-dopped layer of battery, forms the positive pole of battery; Adopt the method for printing at the lower surface printed silver slurry of battery, form the negative pole of battery;
7) sintering
At the temperature of 700 DEG C, by step 6) battery that obtains carries out sintering in sintering furnace, allows battery and silicon form ohmic contact, obtains battery finished product.
Embodiment 4
The method of preparing N-type crystalline silicon double-side cell, comprises the following steps:
1) chemical cleaning
Be that the surperficial matte of the N-type silicon substrate of 10 Ω cm adopts rare NaOH or potassium hydroxide solution to prepare the light trapping structure of Pyramid on the surface of substrate to resistivity, clean with hydrochloric acid and the hydrofluoric acid of dilution subsequently, obtain the N-type silicon substrate that chemical cleaning is crossed;
2) upper surface B Implanted source
The upper surface B Implanted source of the N-type silicon substrate of crossing in chemical cleaning, in ion beam energy 20kev situation, Implantation amount 9 × 15cm -2, after annealing, target sheet resistance is 120 Ω/, obtains possessing the N-type silicon substrate in boron source;
3) lower surface injects phosphorus source annealing
Lower surface at the N-type silicon substrate that possesses boron source injects phosphorus source, in ion beam energy 15kev situation, and Implantation amount 7 × 15cm -2then the N-type silicon substrate that injects phosphorus source is put into annealing furnace, in the temperature range of 1000 DEG C, anneal, after annealing, target sheet resistance is 120 Ω/, makes, in the boron diffusion body of falling silicon chip, to form local PN joint, the phosphorus source that active ions inject, and the silicon face damaging during to Implantation repairs, allow the phosphorus source of injecting form back surface field, obtain injecting the N-type silicon substrate in phosphorus source;
4) upper surface is prepared aluminium oxide passivation layer and the first silicon nitride antireflection layer
At 400 DEG C, adopt at the upper surface of the N-type silicon substrate that injects phosphorus source the alundum (Al2O3) that atomic deposition or PCVD thickness are 20nm, alundum (Al2O3) with negative electrical charge be 5 × 10 13cm -2, form aluminium oxide passivation layer;
Surface at aluminium oxide passivation layer adopts the first silicon nitride antireflection layer that PCVD thickness is 75nm;
5) lower surface is prepared the second silicon nitride antireflection layer
Lower surface at the N-type silicon substrate that injects phosphorus source adopts the second silicon nitride antireflection layer that PCVD thickness is 86nm;
6) prepare the negative pole of the Anode and battery of battery
The method that adopts printing is printed silver aluminium paste above the upper surface printing boron-dopped layer of battery, forms the positive pole of battery; Adopt the method for printing at the lower surface printed silver slurry of battery, form the negative pole of battery;
7) sintering
At the temperature of 900 DEG C, by step 6) battery that obtains carries out sintering in sintering furnace, allows battery and silicon form ohmic contact, obtains battery finished product.
Embodiment 5
According to embodiment 1～4, battery finished product is carried out to quality determination, obtain table 1 as follows:
Table 1 battery quality is measured
? 350nm place external quantum efficiency (%) Battery current density (mA/cm 2)
Embodiment 1 85 41.5
Embodiment 2 88 42
Embodiment 3 86 41.6
Embodiment 4 90 42.5
Because PN joint adopts Al 2o 3the inversion layer of induction is realized, and has reduced surface recombination, and battery improves 21%～28% in the wavelength response at 350nm place than conventional batteries, and simultaneously because the two-sided light that is subject to generates electricity, current density ratio conventional batteries improves 10～12%.

Claims (4)

1.N type crystalline silicon double-side cell, it is characterized in that: comprise positive pole (3), aluminium oxide passivation layer (4), silicon nitride antireflection layer (5), Implantation phosphorus doping layer (6), silicon nitride passivation and the antireflection layer (7) of N-type silicon substrate (1), boron-dopped layer (2), battery, the negative pole (8) of battery, be provided with respectively the positive pole (3) of battery and the negative pole (8) of battery in the upper and lower surface of N-type silicon substrate (1), in the below of the positive pole (3) of battery, boron-dopped layer (2) be set; Be provided with aluminium oxide passivation layer (4) at the upper surface of N-type silicon substrate (1), be provided with the first silicon nitride antireflection layer (5) on the surface of aluminium oxide passivation layer (4); Be provided with Implantation phosphorus doping layer (6) at the lower surface of N-type silicon substrate (1), be provided with the second silicon nitride antireflection layer (7) on the surface of Implantation phosphorus doping layer (6).
2. N-type crystalline silicon double-side cell according to claim 1, is characterized in that: described N-type silicon substrate (1) is the N-type silicon substrate of resistivity between 0.3 cm ~ 10 cm.
3. N-type crystalline silicon double-side cell according to claim 1, is characterized in that: the thickness of described aluminium oxide passivation layer (4) is 5 ~ 20nm.
4. N-type crystalline silicon double-side cell according to claim 1, is characterized in that: the thickness of the first described silicon nitride antireflection layer (5) is 65 ~ 75nm, and the thickness of the second silicon nitride antireflection layer (7) is 73 ~ 86nm.
CN201420253264.3U 2014-05-16 2014-05-16 N-type crystalline silicon double-sided cell Expired - Fee Related CN203839387U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103996721A (en) * 2014-05-16 2014-08-20 奥特斯维能源（太仓）有限公司 N-type crystalline silicon two-sided battery and preparing method thereof
CN104576834A (en) * 2015-01-04 2015-04-29 浙江晶科能源有限公司 Method for manufacturing solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103996721A (en) * 2014-05-16 2014-08-20 奥特斯维能源（太仓）有限公司 N-type crystalline silicon two-sided battery and preparing method thereof
CN104576834A (en) * 2015-01-04 2015-04-29 浙江晶科能源有限公司 Method for manufacturing solar cell

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