CN104576834A - Method for manufacturing solar cell - Google Patents
Method for manufacturing solar cell Download PDFInfo
- Publication number
- CN104576834A CN104576834A CN201510001117.6A CN201510001117A CN104576834A CN 104576834 A CN104576834 A CN 104576834A CN 201510001117 A CN201510001117 A CN 201510001117A CN 104576834 A CN104576834 A CN 104576834A
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- China
- Prior art keywords
- manufacture method
- solar cell
- silicon chip
- silicon
- silicon slice
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- -1 aluminum ions Chemical class 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 239000006117 anti-reflective coating Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 12
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for manufacturing a solar cell. The method for manufacturing the solar cell comprises the steps that a texture and a PN junction are manufactured on the front face of a silicon slice, and phosphorosilicate glass is removed; aluminum ions are injected into the reverse side of the silicon slice; the silicon slice is annealed, and an anti-reflection film is manufactured on the front face of the silicon slice; a back electrode and an aluminum back surface field are manufactured on the back face of the silicon slice, and a positive electrode is manufactured on the front face of the silicon slice. According to the method for manufacturing the solar cell, a high temperature annealing process only needs to be conducted once, the number of the production steps of the solar cell is reduced, and production cost is reduced.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, particularly relate to a kind of manufacture method of solar cell.
Background technology
Solar energy, as a kind of clean renewable resource, is just being subject to increasing attention, and solar cell to be a kind of solar energy that effectively utilizes carry out the equipment generated electricity, because its cost of electricity-generating is higher, therefore distance widespread adoption also needs time.Improving the photoelectric conversion efficiency of solar cell, is the effective ways reducing cost of electricity-generating, therefore improves photoelectric conversion efficiency and becomes one of pendulum important topic in face of engineers and technicians.
In order to improve the photoelectric conversion efficiency of solar cell; usual meeting makes P+ layer and speculum respectively at the back side of silicon chip; P+ layer can reduce the probability of minority carrier in silicon chip back side compound; also can as the metal electrode at the back side, and speculum can reduce not by the transmitted light that silicon absorbs, and increases reverberation; thus increase the light path of light at inside solar energy battery; improve the absorption efficiency of light, motor current, thus improve photoelectric conversion efficiency.
But in the prior art, the material that making P+ layer adopts usually is phosphorus or boron, the material that making speculum adopts usually is aluminium, therefore this is two independently processes, and each process needs to carry out corresponding high temperature anneal operation, to eliminate the damage of silicon chip surface, make the production process of solar cell loaded down with trivial details, improve production cost.
Summary of the invention
For solving the problem, the invention provides a kind of manufacture method of solar cell, the production procedure of solar cell can be reduced, reduce production cost.
The manufacture method of a kind of solar cell provided by the invention comprises:
Make matte and PN junction at front side of silicon wafer, and remove phosphorosilicate glass;
Aluminium ion is injected at described silicon chip back side;
Described silicon chip is annealed;
Antireflective coating is made at described front side of silicon wafer;
Make back electrode and aluminium back surface field at described silicon chip back side, make positive electrode at described front side of silicon wafer.
Preferably, in above-mentioned manufacture method, the dosage of described Al ion implantation is 10
15/ cm
2to 10
25/ cm
2, comprise endpoint value.
Preferably, in above-mentioned manufacture method, the Implantation Energy of described Al ion implantation is greater than 10KeV.
Preferably, in above-mentioned manufacture method, described aluminum ions injection source is AlCl
3.
Preferably, in above-mentioned manufacture method, the protective atmosphere of described annealing is nitrogen.
Preferably, in above-mentioned manufacture method, the flux of described nitrogen is 5slm to 30slm, comprises endpoint value.
Preferably, in above-mentioned manufacture method, the time of described annealing is 20 points to 40 points.
Preferably, in above-mentioned manufacture method, the temperature of described annealing be 750 DEG C to 950 DEG C, comprise endpoint value.
Preferably, in above-mentioned manufacture method, described antireflective coating is silicon nitride film.
Preferably, in above-mentioned manufacture method, hydrofluoric acid is utilized to remove described phosphorosilicate glass.
In the present invention, inject aluminium ion at silicon chip back side and anneal, so just defining P+ layer and speculum simultaneously, therefore only need to carry out a high-temperature annealing process, decrease the production procedure of solar cell, reduce production cost.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The manufacture method schematic diagram of a kind of solar cell that Fig. 1 provides for the embodiment of the present application.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The manufacture method of a kind of solar cell that the embodiment of the present application provides as shown in Figure 1, the manufacture method schematic diagram of a kind of solar cell that Fig. 1 provides for the embodiment of the present application.The method comprises the steps:
S1: make matte and PN junction at front side of silicon wafer, and remove phosphorosilicate glass;
In this step, the making of matte is the anisotropic etch utilizing silicon, forms four sides side's cone of dense distribution, make incident light carry out multiple reflections and refraction on surface at silicon face, increases the absorption of light, thus can improve the conversion efficiency of battery.The corrosive liquid that making matte utilizes is generally the alkaline solution of heat, and corrosion temperature is 70 to 85 degrees Celsius.In order to obtain uniform matte, ethanol or isopropyl alcohol etc. can also be added in the solution as complexing agent, to accelerate the corrosion of silicon.The equipment that making PN junction utilizes usually is tubular diffusion furnace, and general phosphorus oxychloride liquid source of using is as diffuse source.P-type silicon sheet is placed in the quartz container of tubular diffusion furnace, under 850 to 900 celsius temperatures, uses nitrogen to bring phosphorus oxychloride into quartz container, by phosphorus oxychloride and silicon chip reaction, obtain phosphorus atoms.Through certain hour, phosphorus atoms enters the superficial layer of silicon chip from surrounding, and by the space between silicon atom to the diffusion of silicon chip internal penetration, forms PN junction.When removing phosphorosilicate glass, by chemical corrosion method, described phosphorosilicate glass is reacted generation solable matter, thus remove phosphorosilicate glass.
S2: inject aluminium ion at described silicon chip back side;
In this step, described silicon chip is put into ion implantor, carry out aluminum ions injection, the aluminium lamination of formation is P+ layer, again can as speculum.Described aluminium lamination can reduce the probability of minority carrier in silicon chip back side compound, can reduce transmitted light again, increases reverberation, increases the light path of light at inside solar energy battery, increases the absorption efficiency of light, motor current, thus improve photoelectric conversion efficiency.
S3: described silicon chip is annealed;
In this step, utilize annealing furnace to anneal to described silicon chip, object is the damage that elimination ion implantation causes silicon chip surface, the position before the atom departing from original position of silicon chip surface is got back to ion implantation.
S4: make antireflective coating at described front side of silicon wafer;
In this step, usual using plasma enhanced chemical vapor deposition (PECVD) equipment prepares antireflective coating.Utilize low temperature plasma to make energy source, sample is placed on the negative electrode of glow discharge under low pressure, utilizes glow discharge to make sample be warmed up to predetermined temperature, then passes into appropriate reacting gas SiH
4and NH
3, gas is through series reaction, and form silicon nitride film at sample surfaces, deposit thickness can be about 70nm.Above-mentioned silicon nitride film can make the reflection of light greatly reduce, and the efficiency of battery can be improved.
S5: make back electrode and aluminium back surface field at described silicon chip back side, makes positive electrode at described front side of silicon wafer.
In this step, usually adopt silk screen printing method for producing electrode, utilize the mesh of silk screen visuals through slurry, apply certain pressure with scraper at the slurry position of silk screen, move towards the silk screen other end simultaneously.Ink is expressed on substrate from the mesh of visuals by scraper in movement.Viscous effect due to slurry makes trace set within the specific limits, and printing middle scraper linearly contacts with substrate with screen printing forme all the time, and contact wire moves with scraper and mobile, thus completes the printing of electrode.
Known by foregoing description, in the manufacture method of solar cell provided by the invention, inject aluminium ion at silicon chip back side and anneal, so just define P+ layer and speculum simultaneously, therefore only need to carry out a high-temperature annealing process, decrease the production procedure of solar cell, reduce production cost.
In above-mentioned manufacture method, the dosage of described Al ion implantation can be preferably 10
15/ cm
2to 10
25/ cm
2, comprise endpoint value, Implantation Energy can be preferably greater than 10KeV, and injection source can be preferably AlCl
3.The aluminium lamination utilizing this preferred version can make to be formed is more fine and close firm, and more effective minimizing minority carrier is in the compound of silicon chip back side, and more effective increase reverberation, improves photoelectric conversion efficiency.
In above-mentioned manufacture method, the protective atmosphere of described annealing can be preferably nitrogen, and the flux of described nitrogen can be preferably 5slm to 30slm; comprise endpoint value; the time of annealing can be preferably 20 points to 40 points, and the temperature of annealing can be preferably 750 DEG C to 950 DEG C, comprises endpoint value.Utilize the annealing process of this optimization, better can eliminate the damage that ion implantation is brought to silicon chip, the effective photoelectric conversion efficiency ensureing the solar cell made.
In above-mentioned manufacture method, described antireflective coating can be preferably silicon nitride film.This silicon nitride film has high chemical stability, high resistivity, good optical property and resistance to wear, is therefore preferably the antireflective coating of solar cell, can improves the photoelectric conversion efficiency of battery.
In above-mentioned manufacture method, hydrofluoric acid can be preferably utilized to remove described phosphorosilicate glass.Silicon chip is put and soaks in a solution of hydrofluoric acid, make it produce chemical reaction, generate network and the thing of solubility, thus at one deck phosphorosilicate glass that silicon chip surface is formed after diffusion can be removed.
Known by foregoing description, the manufacture method of solar cell provided by the invention can reduce the production procedure of solar cell, reduces production cost.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a manufacture method for solar cell, is characterized in that, comprising:
Make matte and PN junction at front side of silicon wafer, and remove phosphorosilicate glass;
Aluminium ion is injected at described silicon chip back side;
Described silicon chip is annealed;
Antireflective coating is made at described front side of silicon wafer;
Make back electrode and aluminium back surface field at described silicon chip back side, make positive electrode at described front side of silicon wafer.
2. manufacture method according to claim 1, is characterized in that, the dosage of described Al ion implantation is 10
15/ cm
2to 10
25/ cm
2, comprise endpoint value.
3. manufacture method according to claim 1, is characterized in that, the Implantation Energy of described Al ion implantation is greater than 10KeV.
4. manufacture method according to claim 1, is characterized in that, described aluminum ions injection source is AlCl
3.
5. the manufacture method according to any one of claim 1-4, is characterized in that, the protective atmosphere of described annealing is nitrogen.
6. manufacture method according to claim 5, is characterized in that, the flux of described nitrogen is 5slm to 30slm, comprises endpoint value.
7. manufacture method according to claim 5, is characterized in that, the time of described annealing is 20 points to 40 points.
8. manufacture method according to claim 5, is characterized in that, the temperature of described annealing be 750 DEG C to 950 DEG C, comprise endpoint value.
9. manufacture method according to claim 1, is characterized in that, described antireflective coating is silicon nitride film.
10. manufacture method according to claim 1, is characterized in that, utilizes hydrofluoric acid to remove described phosphorosilicate glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510001117.6A CN104576834A (en) | 2015-01-04 | 2015-01-04 | Method for manufacturing solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510001117.6A CN104576834A (en) | 2015-01-04 | 2015-01-04 | Method for manufacturing solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104576834A true CN104576834A (en) | 2015-04-29 |
Family
ID=53092461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510001117.6A Pending CN104576834A (en) | 2015-01-04 | 2015-01-04 | Method for manufacturing solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576834A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101383390A (en) * | 2008-09-25 | 2009-03-11 | 江苏林洋新能源有限公司 | Crystal silicon solar cell scale production process using sintering furnace by secondary sintering |
| CN101976711A (en) * | 2010-10-27 | 2011-02-16 | 晶澳太阳能有限公司 | Method for making solar batteries by adopting ion injection method |
| CN102044576A (en) * | 2009-10-13 | 2011-05-04 | Ips有限公司 | Solar cell and method for fabricating the same |
| CN202651171U (en) * | 2012-04-10 | 2013-01-02 | 信义玻璃工程（东莞）有限公司 | Flexible-solar-cell high-reflection combination structure |
| CN103208564A (en) * | 2013-04-11 | 2013-07-17 | 浙江正泰太阳能科技有限公司 | Method for preparing crystalline silicon solar cell |
| US20140057387A1 (en) * | 2010-07-27 | 2014-02-27 | Amtech Systems, Inc. | Systems and Methods for Depositing and Charging Solar Cell Layers |
| CN103700723A (en) * | 2013-12-20 | 2014-04-02 | 浙江正泰太阳能科技有限公司 | Method for preparing boron-back-field solar cell |
| CN203839387U (en) * | 2014-05-16 | 2014-09-17 | 奥特斯维能源（太仓）有限公司 | N-type crystalline silicon double-sided cell |
-
2015
- 2015-01-04 CN CN201510001117.6A patent/CN104576834A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101383390A (en) * | 2008-09-25 | 2009-03-11 | 江苏林洋新能源有限公司 | Crystal silicon solar cell scale production process using sintering furnace by secondary sintering |
| CN102044576A (en) * | 2009-10-13 | 2011-05-04 | Ips有限公司 | Solar cell and method for fabricating the same |
| US20140057387A1 (en) * | 2010-07-27 | 2014-02-27 | Amtech Systems, Inc. | Systems and Methods for Depositing and Charging Solar Cell Layers |
| CN101976711A (en) * | 2010-10-27 | 2011-02-16 | 晶澳太阳能有限公司 | Method for making solar batteries by adopting ion injection method |
| CN202651171U (en) * | 2012-04-10 | 2013-01-02 | 信义玻璃工程（东莞）有限公司 | Flexible-solar-cell high-reflection combination structure |
| CN103208564A (en) * | 2013-04-11 | 2013-07-17 | 浙江正泰太阳能科技有限公司 | Method for preparing crystalline silicon solar cell |
| CN103700723A (en) * | 2013-12-20 | 2014-04-02 | 浙江正泰太阳能科技有限公司 | Method for preparing boron-back-field solar cell |
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Application publication date: 20150429 |