CN103646991A - Preparation method of P-type crystal silicon double-sided cell - Google Patents
Preparation method of P-type crystal silicon double-sided cell Download PDFInfo
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- CN103646991A CN103646991A CN201310612548.7A CN201310612548A CN103646991A CN 103646991 A CN103646991 A CN 103646991A CN 201310612548 A CN201310612548 A CN 201310612548A CN 103646991 A CN103646991 A CN 103646991A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 37
- 239000013078 crystal Substances 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 230000008021 deposition Effects 0.000 claims abstract description 32
- 238000005245 sintering Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000006117 anti-reflective coating Substances 0.000 claims description 34
- 239000002002 slurry Substances 0.000 claims description 33
- 229910052782 aluminium Inorganic materials 0.000 claims description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 31
- 229910052698 phosphorus Inorganic materials 0.000 claims description 30
- 239000011574 phosphorus Substances 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 29
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 26
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 22
- 238000002513 implantation Methods 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 12
- 229910004205 SiNX Inorganic materials 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 210000002268 wool Anatomy 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 235000008216 herbs Nutrition 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000010248 power generation Methods 0.000 abstract description 2
- 238000009950 felting Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 229910052581 Si3N4 Inorganic materials 0.000 description 30
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 24
- 229910052760 oxygen Inorganic materials 0.000 description 24
- 239000001301 oxygen Substances 0.000 description 24
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 239000000377 silicon dioxide Substances 0.000 description 12
- 239000012895 dilution Substances 0.000 description 6
- 238000010790 dilution Methods 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical class CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a P-type crystal silicon double-sided cell. The preparation method comprises the following steps of felting and chemical cleaning, PN junction formation, film deposition performed on two sides, cell positive and negative pole preparation and sintering. Compared with the prior art, and according to the preparation method of the P-type crystal silicon double-sided cell of the invention, only one-time doping is required, and steps such as film splitting are not required, and therefore, a preparation process can be simpler, and original processes such as frequent high-temperature doping, mask manufacture and film splitting can be avoided, and as a result, preparation steps can be simplified, and preparation cost can be saved. The double-sided cell manufactured by using the preparation method provided by the technical schemes of the invention can fully utilize scattered light of sunlight on the ground, and therefore, the utilization rate of the sunlight can be improved, power generation amount of the cell can be increased.
Description
Technical field
The invention belongs to solar cell and manufacture field, be specifically related to the preparation method of P type crystalline silicon double-side cell.
Background technology
Under the background becoming increasingly conspicuous in problems such as energy shortage, shortage of resources and environmental pollutions, utilize natural resources solar power generation, be taken as the countermeasure that solves global warming and the exhausted problem of fossil fuel, be subject to the favor of countries in the world.Yet higher production cost is restricting its range of application, and along with government subsidy is significantly cut down, reduce the production cost of cell piece, improve generating efficiency and become the extremely urgent problem of each manufacturer.Double-side cell can utilize sunlight more fully, and not only the sunlight of positive incident also has the scattered light at the back side etc., has improved the energy output of battery.And this kind of battery be more suitable for architecture-integral, and the application such as at right angle setting.According to evidence, this cell panel can improve 10%-30% than the energy output of common batteries plate.
Conventional double-side cell is made need to enter twice doping, the P type silicon double-side cell of take is example, its structure is N+PP+, in order to realize N+, need to carry out phosphorus doping, in order to realize P+, need to carry out boron doping, expanding boron needs higher temperature, and difficulty is larger, expand phosphorus simultaneously and expand the mask that boron need to be got well, otherwise intersect, mix the variety of problems such as easy formation electric leakage.
Summary of the invention
goal of the invention:the object of the invention is to for the deficiency in currently available technology, propose a kind of preparation method of new P type crystalline silicon double-side cell.
technical scheme:for achieving the above object, the present invention adopts following technical scheme:
A preparation method for P type crystalline silicon double-side cell, is characterized in that: comprise the following steps:
(a) to the Semiconductor substrate making herbs into wool of P type monocrystalline silicon and carry out chemical cleaning: select P type silicon chip, the P type silicon chip of selecting is carried out to surperficial matte under alkali lye, then carry out chemical cleaning under acid condition, remove surface impurity;
(b) form PN junction, obtain the N+ structure of P type silicon chip front surface: the front surface in P type silicon chip substrate carries out phosphorus diffusion, form PN junction, or carry out Implantation phosphorus source at the front surface of P type silicon chip substrate, by annealing, form PN junction, thereby obtain the N+ structure of front surface;
(c) double-sided deposition antireflective coating: at PN junction one side surface deposition SiNx or SiO
2or SiO
2/ SiNx antireflective coating, at PN junction opposite side surface deposition Al
2o
3/ SiNx or SiO
2/ SiNx or Al
2o
3/ SiO
2/ SiNx antireflective coating;
(d) prepare positive pole and the negative pole of battery: adopt printing technology print respectively containing silver paste and contain aluminum slurry and form negative pole and the positive pole of battery at the front and back regional area of battery; The Main Function of electrode is that the electric current collection of solar cell is got up to derive battery again;
(e) sintering: carry out sintering in sintering furnace, the antireflective coating that the back side is pierced through containing aluminum slurry in the back side forms P
+back surface field, forms complete cell piece N
+pP
+structure.
Preferably, while diffuseing to form PN junction by phosphorus in step b, before carrying out step c, need to carry out the removal of the phosphorosilicate glass of silicon chip and back side PN junction, side PN junction.
The resistivity of the P type silicon chip of preferably, selecting in step a is 0.3-10 cm.
Preferably, surface wool manufacturing and chemical cleaning method concrete in step a are: with NaOH or the potassium hydroxide solution of 0.5-2%, at 75-85 ℃, chemical corrosion is carried out in p type single crystal silicon surface, prepare the matte of Pyramid, with hydrochloric acid and hydrofluoric acid, clean subsequently.
Preferably, the concrete grammar that diffuses to form PN junction by phosphorus in step b is: in diffusion furnace, at the temperature of 600-900 ℃, adopt POCl
3carry out phosphorus diffusion, making P type crystalline silicon sheet resistance is 40-120/; The concrete grammar that forms PN junction by Implantation phosphorus source is: first Implantation phosphorus source is that 8-15keV, Implantation amount are (1 * 15)-(7 * 15) cm at ion beam energy
-2after, then in annealing furnace, at the temperature of 800-1000 ℃, anneal, the P type crystalline silicon sheet resistance after annealing is 40-120/.The object of annealing is the phosphorus source that active ions inject, and the silicon face damaging during to Implantation is repaired.
Preferably, in step c, the coated surface of PN junction opposite side is matte or is burnishing surface, and the thickness of the two-sided antireflective coating after double-sided deposition is 50-100nm.
Preferably, in steps d back up containing aluminum slurry be that penetrating type contains aluminum slurry.Owing to using penetrating type slurry, so do not need out film and aim at printing, make production technology further become more simple.
The temperature of preferably, carrying out sintering in step e in sintering furnace is 400-800 ℃.
Preferably, the removal of phosphorosilicate glass and back side PN junction, side PN junction is that the mixed solution by the hydrofluoric acid of concentration 5-15% and the nitric acid of 50-70% carries out etching removal in the equipment of one side wet etching.
beneficial effect:adopt the present invention of technique scheme to have the following advantages:
The present invention, compared to technology in the past, only need to once adulterate, and not need out the steps such as film, make preparation process simpler, avoid original multiple high temp doping, made mask and open the processes such as film, simplified like this preparation process, saved preparation cost; Adopt the double-side cell that technical scheme of the present invention is prepared can make full use of the light of the sun at the scattered light on ground, improve the utilance of sunlight, improved the energy output of battery.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of P type crystalline silicon double-side cell of the present invention.
Embodiment
Below in conjunction with accompanying drawing and by specific embodiment, the present invention is further elaborated.
Fig. 1 is the cross-sectional view that adopts the P type crystalline silicon double-side cell that technical scheme of the present invention prepares, 1-P type silicon substrate, 2-phosphorus doping N in figure
+layer, 3,6-antireflection layer, the negative pole of 4-battery, 5-silicon-aluminum P
+the positive pole of layer, 7-battery.
Embodiment 1:
A preparation method for P type crystalline silicon double-side cell, this preparation method comprises the following steps:
(a) P type silicon substrate making herbs into wool:
Selecting resistivity is the P type silicon chip of 0.3 cm, and at 75 ℃, chemical corrosion is carried out in p type single crystal silicon surface with 0.5% sodium hydroxide solution, prepare the light trapping structure matte of Pyramid, with approximately 10% hydrochloric acid and hydrofluoric acid of dilution, clean subsequently, remove surface impurity;
(b) front surface at P type silicon substrate carries out phosphorus diffusion, forms PN junction:
In diffusion furnace, at the temperature of 600 ℃, adopt POCl
3carry out phosphorus diffusion, making its sheet resistance scope is 40-120/;
(c) removal of phosphorosilicate glass and back side PN junction, side PN junction:
In the equipment of one side etching, the mixed solution of the hydrofluoric acid of employing concentration 5% and 50% nitric acid, back of the body surface and the edge of etching silicon wafer;
(d) double-sided deposition antireflective coating:
Front surface at substrate is that PN junction one side adopts the method for PCVD (PECVD) to prepare silicon nitride film, or by hot oxygen or wet oxygen or TCA(trichloroethanes) etc. cvd silicon oxide film, or by cvd silicon oxides such as hot oxygen or wet oxygen or TCA, then the surface deposition silicon nitride at silica obtains laminated film; Back of the body surface at substrate is deposited or is adopted the alundum (Al2O3) of PCVD (PECVD) by atomic layer (ALD), then the surface deposition at aluminium oxide adopts the method for PCVD (PECVD) to prepare silicon nitride antireflection film or cvd silicon oxide and silicon nitride anti-reflecting film or the antireflective coating of deposition alundum (Al2O3), silica and silicon nitride, and the thickness of film is 50nm;
(e) prepare positive pole and the negative pole of battery:
Adopt printing technology print respectively containing silver paste and contain aluminum slurry and form negative pole and the positive pole of battery at the front and back regional area of battery, back up containing aluminum slurry be that penetrating type contains aluminum slurry, can at the temperature of 400-800 ℃, pierce through the antireflective coating at the back side;
(f) sintering:
At the temperature of 400 ℃, in sintering furnace, carry out co-sintering, the antireflective coating that the back side is pierced through containing aluminum slurry in the back side under this high temperature forms P
+back surface field, forms complete cell piece N
+pP
+structure.
Embodiment 2:
A preparation method for P type crystalline silicon double-side cell, this preparation method comprises the following steps:
(a) P type silicon substrate making herbs into wool:
Selecting resistivity is the P type silicon chip of 5 cm, and at 80 ℃, chemical corrosion is carried out in p type single crystal silicon surface with 1.0% potassium hydroxide solution, prepare the light trapping structure matte of Pyramid, with approximately 10% hydrochloric acid and hydrofluoric acid of dilution, clean subsequently, remove surface impurity;
(b) front surface at P type silicon substrate carries out phosphorus diffusion, forms PN junction:
In diffusion furnace, at the temperature of 800 ℃, adopt POCl
3carry out phosphorus diffusion, making its sheet resistance scope is 40-120/;
(c) removal of phosphorosilicate glass and back side PN junction, side PN junction:
In the equipment of one side etching, the mixed solution of the hydrofluoric acid of employing concentration 10% and 60% nitric acid, back of the body surface and the edge of etching silicon wafer;
(d) two-sided heavy antireflective coating:
Front surface at substrate is that PN junction one side adopts the method for PCVD (PECVD) to prepare silicon nitride film, or by cvd silicon oxide films such as hot oxygen or wet oxygen or TCA, or by cvd silicon oxides such as hot oxygen or wet oxygen or TCA, then the surface deposition silicon nitride at silica obtains laminated film; Back of the body surface at substrate is deposited or is adopted the alundum (Al2O3) of PCVD (PECVD) by atomic layer (ALD), then the surface deposition at aluminium oxide adopts the method for PCVD (PECVD) to prepare silicon nitride antireflection film or cvd silicon oxide and silicon nitride anti-reflecting film or the antireflective coating of deposition alundum (Al2O3), silica and silicon nitride, and the thickness of film is 75nm;
(e) prepare positive pole and the negative pole of battery:
Adopt printing technology print respectively containing silver paste and contain aluminum slurry and form negative pole and the positive pole of battery at the front and back regional area of battery, back up containing aluminum slurry be that penetrating type contains aluminum slurry, can at the temperature of 400-800 ℃, pierce through the antireflective coating at the back side;
(f) sintering:
At the temperature of 600 ℃, in sintering furnace, carry out co-sintering, the antireflective coating that the back side is pierced through containing aluminum slurry in the back side under this high temperature forms P
+back surface field, forms complete cell piece N
+pP
+structure.
Embodiment 3:
A preparation method for P type crystalline silicon double-side cell, this preparation method comprises the following steps:
(a) P type silicon substrate making herbs into wool:
Selecting resistivity is the P type silicon chip of 10 cm, and at 85 ℃, chemical corrosion is carried out in p type single crystal silicon surface with 2.0% sodium hydroxide solution, prepare the light trapping structure matte of Pyramid, with approximately 10% hydrochloric acid and hydrofluoric acid of dilution, clean subsequently, remove surface impurity;
(b) front surface at P type silicon substrate carries out phosphorus diffusion, forms PN junction:
In diffusion furnace, at the temperature of 900 ℃, adopt POCl
3carry out phosphorus diffusion, making its sheet resistance scope is 40-120/;
(c) removal of phosphorosilicate glass and back side PN junction, side PN junction:
In the equipment of one side etching, the mixed solution of the hydrofluoric acid of employing concentration 15% and 70% nitric acid, back of the body surface and the edge of etching silicon wafer;
(d) double-sided deposition antireflective coating:
Front surface at substrate is that PN junction one side adopts the method for PCVD (PECVD) to prepare silicon nitride film, or by cvd silicon oxide films such as hot oxygen or wet oxygen or TCA, or by cvd silicon oxides such as hot oxygen or wet oxygen or TCA, then the surface deposition silicon nitride at silica obtains laminated film; Back of the body surface at substrate is deposited or is adopted the alundum (Al2O3) of PCVD (PECVD) by atomic layer (ALD), then the surface deposition at aluminium oxide adopts the method for PCVD (PECVD) to prepare silicon nitride antireflection film or cvd silicon oxide and silicon nitride anti-reflecting film or the antireflective coating of deposition alundum (Al2O3), silica and silicon nitride, and the thickness of film is 100nm;
(e) prepare positive pole and the negative pole of battery:
Adopt printing technology print respectively containing silver paste and contain aluminum slurry and form negative pole and the positive pole of battery at the front and back regional area of battery, back up containing aluminum slurry be that penetrating type contains aluminum slurry, can at the temperature of 400-800 ℃, pierce through the antireflective coating at the back side;
(f) sintering:
At the temperature of 800 ℃, in sintering furnace, carry out co-sintering, the antireflective coating that the back side is pierced through containing aluminum slurry in the back side under this high temperature forms P
+back surface field, forms complete cell piece N
+pP
+structure.
Embodiment 4:
A preparation method for P type crystalline silicon double-side cell, this preparation method comprises the following steps:
(a) P type silicon substrate making herbs into wool:
Selecting resistivity is the P type silicon chip of 0.3 cm, and at 75 ℃, chemical corrosion is carried out in p type single crystal silicon surface with 0.5% sodium hydroxide solution, prepare the light trapping structure matte of Pyramid, with approximately 5% hydrochloric acid and hydrofluoric acid of dilution, clean subsequently, remove surface impurity;
(b) front surface at P type silicon substrate carries out Implantation phosphorus source annealing, forms PN junction:
First Implantation phosphorus source, when ion beam energy is that 8keV, Implantation amount are 1 * 15cm
-2after, then at 800 ℃, anneal in annealing furnace, the P type crystalline silicon sheet resistance after annealing is 40-120/;
(c) double-sided deposition antireflective coating:
Front surface at substrate is that PN junction one side adopts the method for PCVD (PECVD) to prepare silicon nitride film, or by cvd silicon oxide films such as hot oxygen or wet oxygen or TCA, or by cvd silicon oxides such as hot oxygen or wet oxygen or TCA, then the surface deposition silicon nitride at silica obtains laminated film; Back of the body surface at substrate is deposited or is adopted the alundum (Al2O3) of PCVD (PECVD) by atomic layer (ALD), then the surface deposition at aluminium oxide adopts the method for PCVD (PECVD) to prepare silicon nitride antireflection film or cvd silicon oxide and silicon nitride anti-reflecting film or the antireflective coating of deposition alundum (Al2O3), silica and silicon nitride, and the thickness of film is 50nm;
(d) prepare positive pole and the negative pole of battery:
Adopt printing technology print respectively containing silver paste and contain aluminum slurry and form negative pole and the positive pole of battery at the front and back regional area of battery, back up containing aluminum slurry be that penetrating type contains aluminum slurry, can at the temperature of 400-800 ℃, pierce through the antireflective coating at the back side;
(e) sintering:
At the temperature of 400 ℃, in sintering furnace, carry out co-sintering, the antireflective coating that the back side is pierced through containing aluminum slurry in the back side under this high temperature forms P
+back surface field, forms complete cell piece N
+pP
+structure.
Embodiment 5:
A preparation method for P type crystalline silicon double-side cell, this preparation method comprises the following steps:
(a) P type silicon substrate making herbs into wool:
Selecting resistivity is the P type silicon chip of 5 cm, and at 80 ℃, chemical corrosion is carried out in p type single crystal silicon surface with 1.0% potassium hydroxide solution, prepare the light trapping structure matte of Pyramid, with approximately 10% hydrochloric acid and hydrofluoric acid of dilution, clean subsequently, remove surface impurity;
(b) front surface at P type silicon substrate carries out Implantation phosphorus source annealing, forms PN junction:
First Implantation phosphorus source, when ion beam energy is that 12keV, Implantation amount are 4 * 15cm
-2after, then at 900 ℃, anneal in annealing furnace, the P type crystalline silicon sheet resistance after annealing is 40-120/;
(c) double-sided deposition antireflective coating:
Front surface at substrate is that PN junction one side adopts the method for PCVD (PECVD) to prepare silicon nitride film, or by cvd silicon oxide films such as hot oxygen or wet oxygen or TCA, or by cvd silicon oxides such as hot oxygen or wet oxygen or TCA, then the surface deposition silicon nitride at silica obtains laminated film; Back of the body surface at substrate is deposited or is adopted the alundum (Al2O3) of PCVD (PECVD) by atomic layer (ALD), then the surface deposition at aluminium oxide adopts the method for PCVD (PECVD) to prepare silicon nitride antireflection film or cvd silicon oxide and silicon nitride anti-reflecting film or the antireflective coating of deposition alundum (Al2O3), silica and silicon nitride, and the thickness of film is 75nm;
(d) prepare positive pole and the negative pole of battery:
Adopt printing technology print respectively containing silver paste and contain aluminum slurry and form negative pole and the positive pole of battery at the front and back regional area of battery, back up containing aluminum slurry be that penetrating type contains aluminum slurry, can at the temperature of 400-800 ℃, pierce through the antireflective coating at the back side;
(e) sintering:
At the temperature of 600 ℃, in sintering furnace, carry out co-sintering, the antireflective coating that the back side is pierced through containing aluminum slurry in the back side under this high temperature forms P
+back surface field, forms complete cell piece N
+pP
+structure.
Embodiment 6:
A preparation method for P type crystalline silicon double-side cell, this preparation method comprises the following steps:
(a) P type silicon substrate making herbs into wool:
Selecting resistivity is the P type silicon chip of 10 cm, and at 85 ℃, chemical corrosion is carried out in p type single crystal silicon surface with 2.0% sodium hydroxide solution, prepare the light trapping structure matte of Pyramid, with approximately 5% hydrochloric acid and hydrofluoric acid of dilution, clean subsequently, remove surface impurity;
(b) front surface at P type silicon substrate carries out Implantation phosphorus source annealing, forms PN junction:
First Implantation phosphorus source, when ion beam energy is that 15keV, Implantation amount are 7 * 15cm
-2after, then at 1000 ℃, anneal in annealing furnace, the P type crystalline silicon sheet resistance after annealing is 40-120/;
(c) double-sided deposition antireflective coating:
Front surface at substrate is that PN junction one side adopts the method for PCVD (PECVD) to prepare silicon nitride film, or by cvd silicon oxide films such as hot oxygen or wet oxygen or TCA, or by cvd silicon oxides such as hot oxygen or wet oxygen or TCA, then the surface deposition silicon nitride at silica obtains laminated film; Back of the body surface at substrate is deposited or is adopted the alundum (Al2O3) of PCVD (PECVD) by atomic layer (ALD), then the surface deposition at aluminium oxide adopts the method for PCVD (PECVD) to prepare silicon nitride antireflection film or cvd silicon oxide and silicon nitride anti-reflecting film or the antireflective coating of deposition alundum (Al2O3), silica and silicon nitride, and the thickness of film is 100nm;
(d) prepare positive pole and the negative pole of battery:
Adopt printing technology print respectively containing silver paste and contain aluminum slurry and form negative pole and the positive pole of battery at the front and back regional area of battery, back up containing aluminum slurry be that penetrating type contains aluminum slurry, can at the temperature of 400-800 ℃, pierce through the antireflective coating at the back side;
(e) sintering:
At the temperature of 800 ℃, in sintering furnace, carry out co-sintering, the antireflective coating that the back side is pierced through containing aluminum slurry in the back side under this high temperature forms P
+back surface field, forms complete cell piece N
+pP
+structure.
The above is comparatively preferred embodiment of the present invention, be noted that for those skilled in the art, under the premise without departing from the principles of the invention, the modification of the various equivalent form of values of the present invention is all fallen within to the application's claims limited range.
Claims (9)
1. a preparation method for P type crystalline silicon double-side cell, is characterized in that: comprise the following steps:
(a) to the Semiconductor substrate making herbs into wool of P type monocrystalline silicon and carry out chemical cleaning: select P type silicon chip, the P type silicon chip of selecting is carried out to surperficial matte under alkali lye, then carry out chemical cleaning under acid condition, remove surface impurity;
(b) form PN junction, obtain the N+ structure of P type silicon chip front surface: the front surface in P type silicon chip substrate carries out phosphorus diffusion, form PN junction, or carry out Implantation phosphorus source at the front surface of P type silicon chip substrate, by annealing, form PN junction, thereby obtain the N of front surface
+structure;
(c) double-sided deposition antireflective coating: at PN junction one side surface deposition SiNx or SiO
2or SiO
2/ SiNx antireflective coating, at PN junction opposite side surface deposition Al
2o
3/ SiNx or SiO
2/ SiNx or Al
2o
3/ SiO
2/ SiNx antireflective coating;
(d) prepare positive pole and the negative pole of battery: adopt printing technology print respectively containing silver paste and contain aluminum slurry and form negative pole and the positive pole of battery at the front and back regional area of battery;
(e) sintering: carry out sintering in sintering furnace, the antireflective coating that the back side is pierced through containing aluminum slurry in the back side forms P
+back surface field, forms complete cell piece N
+pP
+structure.
2. the preparation method of P type crystalline silicon double-side cell according to claim 1, is characterized in that: while diffuseing to form PN junction by phosphorus in step b, before carrying out step c, need to carry out the removal of the phosphorosilicate glass of silicon chip and back side PN junction, side PN junction.
3. the preparation method of P type crystalline silicon double-side cell according to claim 1, is characterized in that: the resistivity of the P type silicon chip of selecting in step a is 0.3-10 cm.
4. the preparation method of P type crystalline silicon double-side cell according to claim 1, it is characterized in that: surface wool manufacturing and chemical cleaning method concrete in step a are: with NaOH or the potassium hydroxide solution of 0.5-2%, at 75-85 ℃, chemical corrosion is carried out in p type single crystal silicon surface, prepare the matte of Pyramid, with hydrochloric acid and hydrofluoric acid, clean subsequently.
5. the preparation method of P type crystalline silicon double-side cell according to claim 1, is characterized in that: the concrete grammar that diffuses to form PN junction by phosphorus in step b is: in diffusion furnace, at the temperature of 600-900 ℃, adopt POCl
3carry out phosphorus diffusion, making P type crystalline silicon sheet resistance is 40-120/; The concrete grammar that forms PN junction by Implantation phosphorus source is: first Implantation phosphorus source is that 8-15keV, Implantation amount are (1 * 15)-(7 * 15) cm at ion beam energy
-2after, then in annealing furnace, at the temperature of 800-1000 ℃, anneal, the P type crystalline silicon sheet resistance after annealing is 40-120/.
6. the preparation method of P type crystalline silicon double-side cell according to claim 1, is characterized in that: in step c, the coated surface of PN junction opposite side is matte or is burnishing surface, and the thickness of the two-sided antireflective coating after double-sided deposition is 50-100nm.
7. the preparation method of P type crystalline silicon double-side cell according to claim 1, is characterized in that: in steps d, back up is that penetrating type contains aluminum slurry containing aluminum slurry.
8. the preparation method of P type crystalline silicon double-side cell according to claim 1, is characterized in that: the temperature of carrying out sintering in step e in sintering furnace is 400-800 ℃.
9. the preparation method of P type crystalline silicon double-side cell according to claim 2, is characterized in that: the removal of phosphorosilicate glass and back side PN junction, side PN junction is that the mixed solution by the hydrofluoric acid of concentration 5-15% and the nitric acid of 50-70% carries out etching removal in the equipment of one side wet etching.
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