CN104465868A - Crystalline silicon solar cell and preparing method thereof - Google Patents
Crystalline silicon solar cell and preparing method thereof Download PDFInfo
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- CN104465868A CN104465868A CN201410671483.8A CN201410671483A CN104465868A CN 104465868 A CN104465868 A CN 104465868A CN 201410671483 A CN201410671483 A CN 201410671483A CN 104465868 A CN104465868 A CN 104465868A
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- 238000000034 method Methods 0.000 title abstract description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- 238000009792 diffusion process Methods 0.000 claims abstract description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 27
- 239000011574 phosphorus Substances 0.000 claims abstract description 27
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003667 anti-reflective effect Effects 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004021 metal welding Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241001347978 Major minor Species 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses a preparing method of a crystalline silicon solar cell. The method includes the steps that a texturing surface is formed on the front face of a silicon wafer; high-sheet-resistance phosphorus diffusion is conducted on the front face of the silicon wafer, and the sheet resistance value adopted for high-sheet-resistance phosphorus diffusion is 110-150 ohms; front-face phosphorosilicate glass and peripheral PN nodes formed by phosphorus diffusion are removed; an anti-reflecting film is formed on the front face of the silicon wafer; a back electric field and a back electrode are printed on the back surface of the silicon wafer, a positive electrode is printed on the front face of the silicon wafer, the positive electrode comprises a main grid and an auxiliary grid, the auxiliary grid is in a nonlinear shape, and the main grid is in a linear shape. Correspondingly, the invention further provides the cell prepared through the preparing method of the crystalline silicon solar cell. According to the preparing method, the nonlinear auxiliary grid has the higher electron collecting capability than the linear auxiliary grid, the open voltage and the short current of the cell are increased through the high-sheet-resistance technology, and the photoelectric conversion efficiency of the crystalline silicon solar cell is improved.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly relate to a kind of crystal silicon solar batteries and preparation method thereof.
Background technology
Crystal silicon solar batteries is that one absorbs solar radiant energy effectively, utilize photovoltaic effect that transform light energy is become the device of electric energy, when solar irradiation is in semiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair), under the effect of P-N junction electric field, hole flows to P district by N district, and electronics flows to N district by P district, just forms electric current after connecting circuit.
The manufacturing process of crystal silicon solar batteries is divided into making herbs into wool, diffusion, etching, front plated film, silk screen printing, the large operation of sintering six.Wherein, silk screen printing is divided into back electrode printing, the printing of aluminium back surface field and positive electrode printing.
At present, the positive electrode printed patterns that industry adopts is the constitutional diagram of the secondary grid of straight line and straight line main grid, and secondary grid and main grid intersect vertically.Secondary grid are the very thin straight line of live width, and live width is between 20 microns to 100 microns, and number of lines is between 60 to 150.Main grid is the wider straight line of live width, and live width is generally between 1.4mm to 2mm, and number of lines is generally between 2 to 10.But, adopt the combination of the secondary grid of above-mentioned straight line and straight line main grid, the lifting of the photoelectric conversion efficiency of crystal silicon solar batteries can be limited.
In prior art, also the shape of main grid and secondary grid is changed to improve the precedent of the photoelectric conversion efficiency of battery, such as patent CN203277401U disclosed " the special-shaped main gate line on a kind of solar battery sheet ", described special-shaped main gate line is S shape, and secondary grid line is waveform.But main gate line and secondary grid line all adopt abnormity design, owing to must be connected to form the core-battery component of solar power station between cell piece by metal welding.If main gate line adopts non-rectilinear, metal welding cannot be welded on main grid, forces welding also can cause very large internal stress, causes welding to follow main grid loose contact, affect the derivation of electric current.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of preparation method of crystal silicon solar batteries, significantly improves the photoelectric conversion efficiency of crystal silicon solar batteries.
Technical problem to be solved by this invention is also, provides the crystal silicon solar batteries that a kind of photoelectric conversion efficiency is high.
In order to solve the problems of the technologies described above, the invention provides a kind of preparation method of crystal silicon solar batteries, comprising:
(1) matte is formed at front side of silicon wafer;
(2) carry out the diffusion of high square resistance phosphorus at front side of silicon wafer, the sheet resistance value that described high square resistance phosphorus diffusion adopts is 110 ~ 150 ohm;
(3) the front phosphorosilicate glass that diffuses to form of phosphorus and periphery P N knot is removed;
(4) described front side of silicon wafer forms antireflective film;
(5) at silicon chip back side printing back of the body electric field and back electrode;
(6) at front side of silicon wafer print positive electrode, positive electrode comprises main grid and secondary grid, and described secondary grid are non-linear shapes, and described main grid is rectilinear form.
As the improvement of such scheme, the sheet resistance value that described high square resistance phosphorus diffusion adopts is 120 ~ 140 ohm.
As the improvement of such scheme, described high square resistance phosphorus is diffused as the diffusion of liquid phosphorus oxychloride tubular type.
As the improvement of such scheme, described high square resistance phosphorus diffusion comprises: silicon chip is placed in diffusion furnace, and temperature is increased to 750-850 DEG C; Pass into oxygen in stove, first silicon chip surface grows layer of silicon dioxide; Continue intensification 5-20 DEG C, pass into oxygen and the nitrogen carrying phosphorus oxychloride; Close gas, cool to 750-850 DEG C, wherein, the flow of phosphorus oxychloride is 500-700sccm/min, and the time of passing into is 8-18min.
As the improvement of such scheme, described non-linear shapes is waveform, triangle zigzag or rectangle.
As the improvement of such scheme, described corrugated curve radian is 0 ~ π.
As the improvement of such scheme, the number of lines of described main grid is 2-8 bar, and live width is 1.0-1.4mm, and the spacing between main grid is 17.33-52mm; The number of lines of described secondary grid is 50-100 bar, and live width is 20-80 μm, and the spacing between secondary grid is 1-4mm.
As the improvement of such scheme, the number of lines of described main grid is 3, and live width is 1.3mm, and the spacing between main grid is 50.7mm; The number of lines of described secondary grid is 90, and live width is 20 μm, and the spacing between secondary grid is 1.722 mm.
As the improvement of such scheme, described antireflective film is silicon nitride anti-reflection film.
Accordingly, the present invention also provides a kind of crystal silicon solar batteries, and it is obtained by above-mentioned preparation method.
Implement the present invention, there is following beneficial effect:
The present invention adopts high square resistance technique to spread, the sheet resistance value that the diffusion of high square resistance phosphorus adopts is 110 ~ 150 ohm, in identical grid line number with under the condition of identical live width, the secondary grid of non-linear shapes of the present invention are at least higher than the sheet resistance value of the secondary grid of prior art rectilinear form 30 ohm, reduce the doping of phosphorus, decrease the compound of minority carrier, what promote battery opens pressure and short stream.Meanwhile, positive electrode half tone pattern adopts the combining structure of the secondary grid of non-rectilinear and straight line main grid, and straight line main grid can ensure that being formed with effect by metal welding between cell piece connects, and forms battery component.The secondary grid of non-rectilinear have the ability of stronger collection electronics than the secondary grid of straight line, can promote the collection ability of electronics, and then promote the photoelectric conversion efficiency of crystal silicon solar batteries.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of front electrode one embodiment of crystal silicon solar batteries of the present invention;
Fig. 2 is the schematic diagram of the another embodiment of front electrode of crystal silicon solar batteries of the present invention;
Fig. 3 is the schematic diagram of another embodiment of front electrode of crystal silicon solar batteries of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail.
The invention provides a kind of preparation method of crystal silicon solar batteries, comprising:
(1) matte is formed at front side of silicon wafer.
The matte of described silicon chip adopts HF and/or HNO
3solution is made, and front side of silicon wafer is matte, can reduce surface reflectivity, increases the utilance of light.
(2) carry out the diffusion of high square resistance phosphorus at front side of silicon wafer, form p-n junction.
The sheet resistance value that described high square resistance phosphorus diffusion adopts is 110 ~ 150 ohm, if lower than 110, then can not produce higher voltage and current, cause photoelectric conversion efficiency low.If higher than 150, the contact resistance of grid line and silicon is higher, causes fill factor, curve factor higher, causes photoelectric conversion efficiency low equally.Preferably, the sheet resistance value that described high square resistance phosphorus diffusion adopts is 120 ~ 140 ohm.Better, the sheet resistance value that described high square resistance phosphorus diffusion adopts is 120 ohm, 125 ohm, 130 ohm, 135 ohm, 140 ohm, but is not limited thereto.
The sheet resistance value that existing diffusion technology generally adopts is 60-80 ohm, the secondary grid of non-linear shapes of the present invention are at least higher than the sheet resistance value of the secondary grid of prior art rectilinear form 30 ohm, reduce the doping of phosphorus, decrease the compound of minority carrier, what promote battery opens pressure and short stream.
Described high square resistance phosphorus diffusion adopts the diffusion of liquid phosphorus oxychloride tubular type, reduced the doping content of phosphorus in silicon chip, form high square resistance by the flow and process time reducing phosphorus oxychloride.The flow of existing phosphorus oxychloride is 1000-1200sccm/min, and the time of passing into is 30min.The flow of phosphorus oxychloride is reduced to 500-700sccm/min by the present invention, and the time of passing into is reduced to 8-18min.
Concrete, described high square resistance phosphorus diffusion comprises: silicon chip is placed in diffusion furnace, and temperature is increased to 750-850 DEG C; Pass into oxygen in stove, first silicon chip surface grows layer of silicon dioxide; Continue intensification 5-20 DEG C, pass into oxygen and carry the nitrogen of phosphorus oxychloride, silicon chip surface reacts with phosphorus oxychloride and oxygen, and the elemental phosphorous of generation is diffused in silicon chip, forms N-type silicon, generation PN junction; Close gas, cool to 750-850 DEG C.Wherein, the flow of phosphorus oxychloride is 500-600sccm/min, and the time of passing into is 10-15min.
Preferably, described high square resistance phosphorus diffusion comprises: silicon chip is placed in diffusion furnace, and temperature is increased to 800 DEG C; Pass into oxygen in stove, first silicon chip surface grows the thin silicon dioxide of one deck; Continue intensification 5-20 DEG C, pass into oxygen and carry the nitrogen of phosphorus oxychloride, silicon chip surface reacts with phosphorus oxychloride and oxygen, and the elemental phosphorous of generation is diffused in silicon chip, forms N-type silicon, generation PN junction; Close gas, cool to 800 DEG C.Wherein, the flow of phosphorus oxychloride is 600sccm/min, and the time of passing into is 15min.
It should be noted that, the oxygen passed into and the flow of nitrogen and time can refer to prior art and arrange.
(3) the front phosphorosilicate glass that diffuses to form of phosphorus and periphery P N knot is removed.
Remove phosphorosilicate glass PSG, eliminate the dead layer on surface; Remove periphery P N knot, make the both positive and negative polarity open circuit of battery, form electrical potential difference.
(4) described front side of silicon wafer forms antireflective film.
Described antireflective film is preferably silicon nitride anti-reflection film.
(5) at silicon chip back side printing back of the body electric field and back electrode.
Back of the body electric field is preferably aluminium electric field, and back electrode is preferably silver electrode or copper electrode, but is not limited thereto.
(6) at front side of silicon wafer print positive electrode.
Positive electrode is preferably silver electrode or copper electrode, but is not limited thereto.
Positive electrode comprises main grid and secondary grid, and described secondary grid are non-linear shapes, and described main grid is rectilinear form.Straight line main grid can ensure that being formed with effect by metal welding between cell piece connects, and forms battery component.The secondary grid of non-rectilinear have the ability of stronger collection electronics than the secondary grid of straight line, can promote the collection ability of electronics, and then promote the photoelectric conversion efficiency of crystal silicon solar batteries.
Concrete, described non-linear shapes can be waveform, triangle zigzag or rectangle, but is not limited thereto.The number of lines of described main grid is 2-8 bar, and live width is 1.0-1.4mm, and the spacing between main grid is 17.33-52mm.The number of lines of described secondary grid is 50-100 bar, and live width is 20-80 μm, and the spacing between secondary grid is 1-4mm.
Preferably, the number of lines of described main grid is 3, and live width is 1.3mm, and the spacing between main grid is 50.7mm.The number of lines of described secondary grid is 90, live width is 20 μm, spacing between secondary grid is 1.722 mm, the pattern that main grid and secondary grid are formed is evenly distributed on the silicon chip that the length of side is 156mm, 4 edges of pattern edge distance silicon chip are all set to 0.5mm, the number of major-minor grid line and live width, according to the standard configuration the most effectively collecting electric current and reduction shading-area, ensure that the shading-area of grid line is minimum, ensure the ability the most effectively collecting electric current simultaneously.In addition, require between adjacent pair grid non-intersect.
Accordingly, the present invention also provides a kind of crystal silicon solar batteries, and it is obtained by above-mentioned preparation method, and this crystal silicon solar batteries specifically comprises: back electrode, the back of the body electric field, silicon chip, emitter, antireflective film and positive electrode.Wherein, positive electrode comprises main grid and secondary grid, and described secondary grid are non-linear shapes, and described main grid is rectilinear form.
Concrete, described non-linear shapes can be waveform, triangle zigzag or rectangle, but is not limited thereto.The number of lines of described main grid is 2-8 bar, and live width is 1.0-1.4mm, and the spacing between main grid is 17.33-52mm.The number of lines of described secondary grid is 50-100 bar, and live width is 20-80 μm, and the spacing between secondary grid is 1-4mm.
Preferably, the number of lines of described main grid is 3, and live width is 1.3mm, and the spacing between main grid is 50.7mm.The number of lines of described secondary grid is 90, live width is 20 μm, spacing between secondary grid is 1.722 mm, the pattern that main grid and secondary grid are formed is evenly distributed on the silicon chip that the length of side is 156mm, 4 edges of pattern edge distance silicon chip are all set to 0.5mm, the number of major-minor grid line and live width, according to the standard configuration the most effectively collecting electric current and reduction shading-area, ensure that the shading-area of grid line is minimum, ensure the ability the most effectively collecting electric current simultaneously.In addition, require between adjacent pair grid non-intersect.
Composition graphs 1 to Fig. 3, the invention provides the numerous embodiments of positive electrode, specific as follows:
See Fig. 1, positive electrode comprises main grid 1 and secondary grid 2, and secondary grid 2 are wave-like, and main grid 1 is rectilinear form, and corrugated curve radian is 0 ~ π.The number of lines of described main grid is 3, and live width is 1.3mm, and the spacing between main grid is 50.7mm; The number of lines of secondary grid is 90, and live width is 20 μm, and the spacing between secondary grid is 1.722mm.
See Fig. 2, positive electrode comprises main grid 1 and secondary grid 2, and secondary grid 2 are rectangular shape, and main grid 1 is rectilinear form.The number of lines of described main grid is 3, and live width is 1.3mm, and the spacing between main grid is 50.7mm; The number of lines of secondary grid is 100, and live width is 25 μm, and the spacing between secondary grid is 1.541 mm.
See Fig. 3, positive electrode comprises main grid 1 and secondary grid 2, and secondary grid 2 are triangle zigzag fashion, and main grid 1 is rectilinear form.The number of lines of described main grid is 5, and live width is 1.2mm, and the spacing between main grid is 30mm; The number of lines of secondary grid is 110, and live width is 30 μm, and the spacing between secondary grid is 1.392 mm.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a preparation method for crystal silicon solar batteries, is characterized in that, comprising:
(1) matte is formed at front side of silicon wafer;
(2) carry out the diffusion of high square resistance phosphorus at front side of silicon wafer, the sheet resistance value that described high square resistance phosphorus diffusion adopts is 110 ~ 150 ohm;
(3) the front phosphorosilicate glass that diffuses to form of phosphorus and periphery P N knot is removed;
(4) described front side of silicon wafer forms antireflective film;
(5) at silicon chip back side printing back of the body electric field and back electrode;
(6) at front side of silicon wafer print positive electrode, positive electrode comprises main grid and secondary grid, and described secondary grid are non-linear shapes, and described main grid is rectilinear form.
2. preparation method as claimed in claim 1, is characterized in that, the sheet resistance value that described high square resistance phosphorus diffusion adopts is 120 ~ 140 ohm.
3. preparation method as claimed in claim 1 or 2, is characterized in that, described high square resistance phosphorus is diffused as the diffusion of liquid phosphorus oxychloride tubular type.
4. preparation method as claimed in claim 3, is characterized in that, described high square resistance phosphorus diffusion comprises:
Silicon chip is placed in diffusion furnace, and temperature is increased to 750-850 DEG C;
Pass into oxygen in stove, first silicon chip surface grows layer of silicon dioxide;
Continue intensification 5-20 DEG C, pass into oxygen and the nitrogen carrying phosphorus oxychloride;
Close gas, cool to 750-850 DEG C;
Wherein, the flow of phosphorus oxychloride is 500-700sccm/min, and the time of passing into is 8-18min.
5. preparation method as claimed in claim 1, it is characterized in that, described non-linear shapes is waveform, triangle zigzag or rectangle.
6. preparation method as claimed in claim 5, it is characterized in that, described corrugated curve radian is 0 ~ π.
7. preparation method as claimed in claim 1, it is characterized in that, the number of lines of described main grid is 2-8 bar, and live width is 1.0-1.4mm, and the spacing between main grid is 17.33-52mm;
The number of lines of described secondary grid is 50-100 bar, and live width is 20-80 μm, and the spacing between secondary grid is 1-4mm.
8. preparation method as claimed in claim 7, it is characterized in that, the number of lines of described main grid is 3, and live width is 1.3mm, and the spacing between main grid is 50.7mm;
The number of lines of described secondary grid is 90, and live width is 20 μm, and the spacing between secondary grid is 1.722 mm.
9. preparation method as claimed in claim 1, it is characterized in that, described antireflective film is silicon nitride anti-reflection film.
10. a crystal silicon solar batteries, is characterized in that, it is obtained by the preparation method described in any one of claim 1-9.
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| CN201410671483.8A CN104465868B (en) | 2014-11-21 | 2014-11-21 | A kind of crystal silicon solar batteries and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473491A (en) * | 2018-11-22 | 2019-03-15 | 晶科能源科技（海宁）有限公司 | A kind of imbrication cell piece |
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