CN207852689U - A kind of interdigital back contact solar cell piece - Google Patents
A kind of interdigital back contact solar cell piece Download PDFInfo
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- CN207852689U CN207852689U CN201721520251.8U CN201721520251U CN207852689U CN 207852689 U CN207852689 U CN 207852689U CN 201721520251 U CN201721520251 U CN 201721520251U CN 207852689 U CN207852689 U CN 207852689U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of interdigital back contact solar cell piece, the cell piece includes silicon chip substrate and PN junction layer and electrode layer set on silicon chip back side, further includes one layer of Al from top to bottom between PN junction layer and electrode layer2O3Film and thin layer of sin, the electrode includes several thin grid and main grid pole, and the thin grid is parallel with the areas P or the areas N, and the thin grid is segmental structure, just superfine grid and the thin grid of cathode are staggered, and the open position of the thin grid of identical polar is in same vertical join line；The main grid pole is connected with the thin gate vertical of same polarity, is located on the vertical connection lines of the thin grid open position of another polarity.The areas P and the areas N is segmental structure, and the position of disconnection is consistent with the open position of thin grid thereon.The battery structure can improve battery conversion efficiency, and simplify battery production program and reduce type of stock.
Description
Technical field
The utility model belongs to solar battery sheet field, and in particular to a kind of interdigital back contact solar cell piece.
Background technology
It in current photovoltaic industry, is influenced by the market factor, cell piece transfer efficiency is at the key of Business survival, height
It has been trend of the times to imitate cell piece.Interdigital back contact solar cell cell piece becomes due to its achievable high conversion efficiency
The direction of many Corporation R ＆ Ds.
In finger-like cross arrangement, electrode is being printed and is being welded for the areas N and the areas P in interdigital back contact solar cell
In the process, two kinds of situations can be encountered：One, positive and negative anodes main grid bus electrode or for cell piece components welding welding need with just
Negative grid line contacts electrode vertical arrangement, short to prevent since positive and negative anodes grid line contact electrode intersects using finger-like and run through arrangement
Road prints positive and negative anodes primary gate electrode or needs to do insulation processing on positive and negative grid line contact electrode before carrying out components welding；Two, just
Cathode grid line contacts electrode and uses segment design, vacates main grid region, this design requirement primary gate electrode slurry cannot burn anti-reflection
Layer is penetrated, i.e., cannot be in contact with the areas N or the areas P, increase process complexity and material variety.
Therefore the utility model provide interdigital back contact solar cell piece have new PN structure layer, the PN structure layer
So that production can be simplified during subsequent electrode fabrication and reduce type of stock, reduce production cost and improve battery effect
Rate.
Utility model content
In view of the above-mentioned problems, the utility model proposes a kind of interdigital back contact solar cells with new PN structure layer
Piece, which so that production can be simplified during subsequent electrode fabrication and reduces type of stock, and reduction is produced into
This simultaneously improves battery conversion efficiency.
It realizes above-mentioned technical purpose, reaches above-mentioned technique effect, the utility model is achieved through the following technical solutions：
A kind of interdigital back contact solar cell piece, including silicon chip substrate and PN junction layer and electrode set on silicon chip back side
Layer, further includes one layer of Al from top to bottom between PN junction layer and electrode layer2O3Film and thin layer of sin, the PN structure layer include
Between wrong parallel arrangement the areas P and the areas N；The electrode layer includes positive electrode and negative electrode, and the positive electrode connects with the areas P
It touches, the negative electrode is in contact with the areas N；The Al2O3Film and thin layer of sin are equipped with the fluting of accommodating electrode layer；
The electrode includes several thin grid and main grid pole, and the thin grid is parallel with the areas P or the areas N, described
Thin grid is segmental structure, and just superfine grid and the thin grid of cathode are staggered, and the open position of the thin grid of identical polar is same
In one vertical join line；The main grid pole is connected with the thin gate vertical of same polarity, is located at the thin grid of another polarity and disconnects position
On the vertical connection lines set；
The areas P and the areas N is segmental structure, and the position of disconnection is consistent with the open position of thin grid thereon.
The areas P of same polarity or N in the extremely following PN junction layer of the main grid as a further improvement of the utility model,
Area connects, and the areas P of opposed polarity or the areas N disconnect.
Completely attached between the areas N and the areas P as a further improvement of the utility model, or part contact or
Person does not contact.
The number of just superfine grid segmentation is segmented with the thin grid of cathode as a further improvement of the utility model,
Number it is identical, the segments of the thin grid or PN junction layer is 2-30, and every section of length is 0.3-2mm.
Further include as a further improvement of the utility model, the positive electrode for being located at cell piece both sides main grid pole and
The main grid pole of negative electrode, the number of main grid pole positive electrode master identical as the segments of the thin grid of another polarity, described
Grid is identical as the main number of gates of negative electrode.
The positive main grid pole is centrosymmetric with cathode main grid pole as a further improvement of the utility model,.
The number of the same polar thin grid is 10-2000 roots as a further improvement of the utility model,.
The beneficial effects of the utility model：The utility model proposes interdigital back contact solar cell piece have new PN
The thin grid of structure sheaf, the PN structure layer and electrode layer uses segmental structure, the thin gate vertical of main grid pole and same polarity to connect,
When connecting the main grid pole of thin grid across the PN junction layer of opposed polarity, this PN junction layer disconnects, and load is not necessarily to during making electrode
Heart antireflection layer, which is burnt, causes short circuit, therefore the main grid pole of making electrode and thin grid can simultaneously be made with a slurry
Make, i.e., need not make step by step, and insulation processing need not be done and simplify production stage, reduces material variety, reduce production cost.
On the other hand the PN junction for increasing primary gate electrode region uses, and can reduce cell piece series resistance, improves battery efficiency.
Description of the drawings
Fig. 1 is solar battery sheet sectional view；
Fig. 2 is prior art solar battery sheet PN structure layer plane figure；
Fig. 3 is solar battery sheet PN structure layer plane figure in a kind of embodiment of the utility model；
Fig. 4 is solar battery sheet PN structure layer plane figure in second of embodiment of the utility model；
Fig. 5 is Fig. 4 along line A-A PN structure layer sectional view；
Wherein：1- silicon chip substrates, the areas 201-P, the areas 202-N, 3-Al2O3Film, 4- thin layer of sin, 501- positive electrodes, 502-
Negative electrode.
Specific implementation mode
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, with reference to embodiments, to this
Utility model is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain this practicality
It is novel, it is not used to limit the utility model.
The application principle of the utility model is explained in detail below in conjunction with the accompanying drawings.
A kind of interdigital back contact solar cell piece as shown in Figure 1, including silicon chip substrate and the PN set on silicon chip back side
Layer and electrode layer are tied, further includes one layer of Al from top to bottom between PN junction layer and electrode layer2O3Film and thin layer of sin.
The areas P and the areas N of the PN junction layer wrong parallel arrangement between including；The areas P are by silicon chip substrate surface
Spread what B element was formed, the areas N are formed in silicon chip surface diffusion P element.
It can as shown in Fig. 1 contact with each other between the areas P and the areas N, or as shown in Fig. 5 non-contact
, can also be part contact.
The electrode layer includes positive electrode and negative electrode, and the positive electrode is in contact with the areas P, the negative electrode and N
Area is in contact.
Due to Al2O3It is nonconducting insulating layer with thin layer of sin, needs the position of the contact in electrode layer with PN junction layer
Fluting so that the two comes into full contact with.
The electrode includes several thin grid and main grid pole, and the number for same polar thin grid is 10-
2000, the thin grid is parallel with the areas P or the areas N, and the thin grid of the positive electrode is parallel to be set in the areas P, described
The thin grid of negative electrode parallel be set in the areas N.
The thin grid is segmental structure, the number phase of the number and the thin grid segmentation of cathode of just superfine grid segmentation
Together.The open position of the thin grid of same polarity is located in same vertical join line, and it is in staggered row to be due to two kinds of polar thin grids
Row, therefore another polar thin grid is continuous in the vertical join line, i.e., the line that the thin grid of opposed polarity disconnects is not
It appears on same vertical line.The main grid pole is connected with the thin gate vertical of same polarity, is located at the thin grid of another polarity
On the vertical connection lines of pole open position, wherein the void size of thin grid open position is more than the width of main grid pole, to prevent
Short circuit.
As shown in Figure 3 and Figure 4, the areas P and the areas N are segmental structure, and the position disconnected is disconnected with thin grid thereon
Open position is consistent, avoids and constitutes short circuit between the main grid pole of opposed polarity thereon；The extremely following areas P of positive main grid connect
It connects, the areas N disconnect；The extremely following areas the N connection of cathode main grid, the areas P disconnect.Thus in Al during making solar panel2O3
With the direct trepanning in region that can pass through in main grid pole in thin layer of sin, the master for the same polarity electrode that can subsequently make simultaneously
Grid and thin grid make without substep, are made without additional insulating layer is increased, that is, reduce processing step, save energy
Source, and raw material have been saved, reduce production cost.
In the embodiments of the present invention, the segments of the thin grid or PN junction layer is 2-30, and every section of length is
The number of 0.3-2mm, segmentation are more, and every section of length is shorter.The number of main grid pole as shown in Figure 4 and the thin grid of another polarity
The segments of pole is identical, and the main grid pole is also wrapped in addition to including the main grid pole shown in Fig. 3 for being located at cell piece both sides
It includes and is arranged in the vertical join line of the thin grid open position of another polarity.It is preferred embodiment for embodiment two shown in Fig. 4, it is main
The increase of gate electrode number improves PN junction use, can reduce cell piece series resistance.
According to above-described interdigital back contact solar cell piece, production method includes the following steps：
S1：Using the corrosiveness of potassium hydroxide aqueous slkali, the silicon chip to making solar battery sheet carries out polished backside
Processing.
S2：The back side doping boron element being polished to silicon chip using the method for spin coating in the utility model, forms the areas P.
Specially first spin-coating equipment is used to be coated with one layer of boron source in silicon chip back surface, high temperature propulsion then is carried out to boron in diffusion furnace.
Hot oxygen processing is carried out after propulsion, grows layer of silicon dioxide protective layer on surface.Then the method for laser grooving is utilized to press
According to the graphic designs of PN junction in the utility model, boron that the areas selective removal N are spread.
S3：Using liquid phosphorus diffusion method, phosphorus diffusion is carried out to the areas N of silicon chip back side in tubular diffusion furnace.At this time may be used
Obtain the PN junction graphic structure designed by the utility model.In this step, phosphorus diffusion spreads for whole face, due to the areas P table in S2
Face grown silicon dioxide layer of protection, so the areas P do not have phosphorus diffusion entrance；And the protective layer in the areas N is swashed with the boron diffused through
Photoetching eating away can be normally carried out phosphorus diffusion.
S4：Layer of silicon dioxide protective layer is plated on the PN junction that S2, S3 are completed using room temperature chemical vapor infiltration.
S5：Silicon chip is put into potassium hydroxide basic solution, making herbs into wool processing is carried out to front, uses the nitration mixture pair of HF and HCl later
The surface of silicon chip is cleaned, and the silicon dioxide layer of protection in S4 is removed.
S6：Using back of the body paralysis facility, aluminium oxide and silicon nitride are plated on silicon chip back side PN junction, carry out passivating back.Specifically
Process be first with argon gas carry trimethyl aluminium mixed with laughing gas, then to gaseous mixture ionization, in silicon chip surface deposited oxide
Aluminium, as silicon chip passivation layer.Again by ionizing the gaseous mixture of ammonia and silane, in silicon chip surface deposited silicon nitride.
S7：Using laser slotting method in Al2O3It is equipped with accommodating positive and negative anodes electrode main grid pole and thin grid with silicon nitride film
Position on slot, it is ensured that the electrode produced can be in contact with PN junction.
S8：Using silk screen print method, the main grid pole of positive electrode and thin grid first are made simultaneously with positive electrode slurry, after drying
The main grid pole of negative electrode and thin grid are made with negative electrode slurry simultaneously；Then positive and negative gate line electrode is sintered.Wherein make
Making the sequence of anode and cathode can mutually adjust.It makes the slurry of positive electrode and makes the slurry use of negative electrode with a solid
The slurry of platiniferous, Jin Heyin that content is 90%.
S9：Sintered cell piece, can be by a piece of 180 ° of rotation, keeping the positive and negative main grid pole of two panels cell piece just right
It answers, then positive and negative main grid pole is welded to connect with welding.
In the utility model, the slurry for making just superfine grid and positive main grid pole is that it is thin to make cathode with a silver paste A
Grid and the slurry of cathode main grid pole are with a silver paste B, and the solid content in the silver paste A and silver paste B is identical or different.
The solid content of the silver paste A is 75-95%, and the solid content of the silver paste B is 75-95%, when making electrode, the silver
The identical silver paste of solid content can be used by starching A and silver paste B, the silver paste that solid content can also be used different.
The making in the areas P and the areas N of the utility model can also use solid-state printing diffusion, spin coating diffusion or ion implanting to expand
Arching pushing.
The advantages of basic principles and main features and the utility model of the utility model have been shown and described above.One's own profession
The technical staff of industry is it should be appreciated that the present utility model is not limited to the above embodiments, described in above embodiments and description
Only illustrate the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model is also
It will have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.The utility model
Claimed range is defined by the appending claims and its equivalent thereof.
Claims (7)
1. a kind of interdigital back contact solar cell piece, including silicon chip substrate and PN junction layer and electrode layer set on silicon chip back side,
Further include one layer of Al from top to bottom between PN junction layer and electrode layer2O3Film and thin layer of sin, it is characterised in that：The PN junction
The areas P and the areas N of structure floor wrong parallel arrangement between including；The electrode layer includes positive electrode and negative electrode, the positive electrode and P
Area is in contact, and the negative electrode is in contact with the areas N；The Al2O3Film and thin layer of sin are equipped with opening for accommodating electrode layer
Slot；
The electrode includes several thin grid and main grid pole, and the thin grid is parallel with the areas P or the areas N, the thin grid
Extremely segmental structure, just superfine grid and the thin grid of cathode are staggered, and the open position of the thin grid of identical polar is in same
In vertical join line；The main grid pole is connected with the thin gate vertical of same polarity, is located at the thin grid open position of another polarity
On vertical connection lines；
The areas P and the areas N is segmental structure, and the position of disconnection is consistent with the open position of thin grid thereon.
2. a kind of interdigital back contact solar cell piece according to claim 1, it is characterised in that：The main grid extremely under
The areas P of the same polarity either areas P of the areas N connection opposed polarity or the disconnection of the areas N in the PN junction layer in face.
3. a kind of interdigital back contact solar cell piece according to claim 1 or 2, it is characterised in that：The areas N and
It is completely attached between the areas P or part contacts or do not contact.
4. a kind of interdigital back contact solar cell piece according to claim 1, it is characterised in that：The just superfine grid
The number of pole segmentation is identical as the thin number of grid segmentation of cathode, and the segments of the thin grid or PN junction layer is 2-30, often
The length of section is 0.3-2mm.
5. a kind of interdigital back contact solar cell piece according to claim 4, it is characterised in that：Further include being located at
The main grid pole of the positive electrode of cell piece both sides and the main grid pole of negative electrode, number and the thin grid of another polarity of the main grid pole
Segments it is identical, the positive electrode main grid pole is identical as the main number of gates of negative electrode.
6. a kind of interdigital back contact solar cell piece according to claim 5, it is characterised in that：The positive main grid
Pole is centrosymmetric with cathode main grid pole.
7. a kind of interdigital back contact solar cell piece according to claim 1, it is characterised in that：It is described same polar
The number of thin grid is 10-2000 roots.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721520251.8U CN207852689U (en) | 2017-11-15 | 2017-11-15 | A kind of interdigital back contact solar cell piece |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721520251.8U CN207852689U (en) | 2017-11-15 | 2017-11-15 | A kind of interdigital back contact solar cell piece |
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| CN207852689U true CN207852689U (en) | 2018-09-11 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799616A (en) * | 2017-11-15 | 2018-03-13 | 南通苏民新能源科技有限公司 | A kind of interdigital back contact solar cell piece and preparation method thereof |
| CN112420853A (en) * | 2019-08-21 | 2021-02-26 | 苏州阿特斯阳光电力科技有限公司 | Multi-main-grid solar cell and solar module |
-
2017
- 2017-11-15 CN CN201721520251.8U patent/CN207852689U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799616A (en) * | 2017-11-15 | 2018-03-13 | 南通苏民新能源科技有限公司 | A kind of interdigital back contact solar cell piece and preparation method thereof |
| CN107799616B (en) * | 2017-11-15 | 2023-12-05 | 南通苏民新能源科技有限公司 | Interdigital back contact solar cell and manufacturing method thereof |
| CN112420853A (en) * | 2019-08-21 | 2021-02-26 | 苏州阿特斯阳光电力科技有限公司 | Multi-main-grid solar cell and solar module |
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| TR01 | Transfer of patent right |
Effective date of registration: 20190627 Address after: 224400 Hongkong Road, Funing Economic Development Zone, Yancheng City, Jiangsu 888 Patentee after: Funing Sumin Green Energy Technology Co., Ltd. Address before: 226300 Fuhai Road 99, Tongzhou Bay Jianghai Linkage Development Demonstration Zone, Nantong City, Jiangsu Province Patentee before: Nantong Su Minxin Energy Technology Co Ltd |