CN104966744A - Crystalline silicon solar cell and preparation method thereof - Google Patents
Crystalline silicon solar cell and preparation method thereof Download PDFInfo
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- CN104966744A CN104966744A CN201510394993.XA CN201510394993A CN104966744A CN 104966744 A CN104966744 A CN 104966744A CN 201510394993 A CN201510394993 A CN 201510394993A CN 104966744 A CN104966744 A CN 104966744A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 59
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 238000005468 ion implantation Methods 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 28
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims description 25
- 239000011574 phosphorus Substances 0.000 claims description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 19
- 239000000243 solution Substances 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 239000010953 base metal Substances 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 101710134784 Agnoprotein Proteins 0.000 claims description 10
- 239000007943 implant Substances 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 239000013078 crystal Substances 0.000 abstract description 12
- 230000004044 response Effects 0.000 abstract description 3
- 230000003595 spectral effect Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 7
- 239000002210 silicon-based material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an efficient crystal silicon solar cell and a preparation method thereof. Compared with a traditional structure, and according to the solar cell structure of the invention, micro texturized structures are formed on the surfaces of inverted Pyramid structures, and the micro texturized structures can further reduce light reflection and improve the spectral response of the device. The preparation method is suitable for P type and n type solar cells; ion implantation is adopted, so that doping preparation of a p+ layer and an n+ layer can be realized; and heavily-doped layers are selectively etched so that the micro texturized structures on the upper surface of the p<+> layer or the n<+> layer can be obtained. With the preparation method provided by the technical schemes of the invention adopted, the improvement of the performance of the crystalline silicon solar cell can be benefitted.
Description
Technical field
The invention belongs to field of photovoltaic technology, be specifically related to a kind of crystal-silicon solar cell and preparation method thereof.
Background technology
Solar cell be a kind of utilize large-area p-n junction diode solar energy is directly changed into electric energy optoelectronic semiconductor component.Becoming increasingly conspicuous in recent years along with the energy and environmental problem, more and more comes into one's own, obtains and greatly develop and extensive use.Current industrial large-scale production is also occupied an leading position and is still crystal-silicon solar cell.For a long time, people adopt surperficial inverted pyramid structure to reduce light reflection, improve device spectral response, to reach the object improving solar cell conversion efficiency, but still have the reflectivity of 10 ~ 15%, limit the further raising of solar cell performance.
In addition, there is inevitable photo attenuation problem in the p-type crystal silicon solar battery of traditional employing boron-doping.It is insensitive that N-shaped silicon has been proved to be the compound caused common transition metal impurity, has the minority diffusion length longer than p-type silicon.Therefore the solar cell that the solar cell adopting n-type crystalline silicon sheet to make adopts p-type crystal silicon chip to make relatively will have more superior performance; And adopt n-type crystalline silicon solar cell there is no the problem of photo attenuation.But, need in the preparation of n-type crystalline silicon solar cell in front surface doped with boron to form p-n junction as emitter; Doping Phosphorus is to form n-n+ back surface field as base stage overleaf.Conventional solar cell technique adopts High temperature diffusion technology to adulterate, and boron diffusion then adopts BBr
3deng liquid source, there is the problems such as serious inhomogeneities in doped layer; But also need to consider how to avoid when the another one surface of silicon chip forms phosphorus doping, the cross pollution between the impurity that two surfaces are different, complex process, difficulty are large.Ion implantation technique is the doping techniques of semiconductor applications extensive use already, have one side doping, Impurity Distribution control precisely, can form shallow junction, easily realize the advantage such as graphical of doped region, this technology accurately can realize p-type or N-shaped doping, is applied in advantage crystal silicon solar battery preparation with technology not available for High temperature diffusion technology and production aspect.
In order to overcome the limitation of diffusing, doping in crystal silicon solar battery structure and preparation, the conversion efficiency of further raising solar cell, based on the principle that heavily doped layer preferentially corrodes, propose a kind of one side selective corrosion and form solar battery structure of surperficial micro-suede structure and preparation method thereof, the method is conducive to improving battery performance, particularly short wavelength's spectral response characteristic.The method can be used for the preparation of the micro-suede structure of n+ layer or p+ layer surface, is conducive to the raising of p-type or N-shaped solar cell performance.
Summary of the invention
The shortcoming of present situation and prior art in view of the above, the object of the present invention is to provide a kind of crystal silicon solar battery and preparation method thereof, the reflection of solar battery surface in prior art be large to overcome, the problems such as doped layer existing for pn knot is uneven, impurity cross pollution that adopt diffusion technique to prepare.
For achieving the above object and other relevant objects, the invention provides a kind of crystal-silicon solar cell, it is characterized in that: the inverted pyramid structure of described p-type solar cell front surface has micro-suede structure, and described solar cell at least comprises: p-type crystalline silicon substrates, and surface has inverted pyramid structure; Have the n+ emitter layer of specific doping content, be positioned on p-type crystalline silicon substrates, n+ surface has micro-suede structure; Front surface passivation layer, is positioned on n+ emitter layer, and surface has micro-suede structure; P+ base layer, is positioned under p-type crystalline silicon substrates; Form the base metal electrode of ohmic contact with p+ base layer, be positioned under p+ base layer; Through front surface passivation layer, form the emitter metal electrode of ohmic contact with n+ emitter layer.
In efficient p-type crystal silicon solar battery provided by the invention, described front surface passivation layer is silicon nitride or silica/silicon nitride stack film, is preferably silica/silicon nitride stack film.
In efficient p-type crystal silicon solar battery provided by the invention, described silicon oxide layer thickness is 5 ~ 20nm, and silicon nitride layer thickness is 20 ~ 100nm.
In addition, the present invention also provides a kind of preparation method of efficient p-type crystal-silicon solar cell, and described method at least comprises the following steps: step one, provides a p-type crystalline silicon material, prepares inverted pyramid structure at described surface of crystalline silicon; Step 2, prepares n+ emitter layer at the described upper surface having prepared the p-type crystalline silicon substrates of inverted pyramid structure; Step 3, in the micro-suede structure of the described emitter layer of n+ surface preparation; Step 4, prepares front surface passivation layer at the micro-suede body structure surface of described n+; Step 5, emitter metal electrode and base metal electrode are prepared in silk screen printing; Step 6, electrode anneal prepares p+ base layer, and realizes electrode ohmic contact.
In the preparation method of efficient p-type crystal-silicon solar cell provided by the invention, described n+ emitter layer adopts diffusion or ion injection method preparation, preferably adopts ion injection method.
In the preparation method of efficient p-type crystal-silicon solar cell provided by the invention, the micro-suede structure of described n+ emitter surface adopts RIE etching, or adopts volume ratio to be K
2cr
2o
7: HF:H
2o=1:2:5 ~ 1:2:10 or CrO
3: HF:H
2o=1:2:5 ~ 1:2:10 or AgNO
3: the solution corrosion preparation of HF=1:4 ~ 1:8, wherein K
2cr
2o
7the molar concentration of solution is 0.05 ~ 0.15mol/L; CrO
3the molar concentration of solution is 2 ~ 3mol/L; AgNO
3the molar concentration of solution is 0.01 ~ 0.03mol/L.
In the preparation method of efficient p-type crystal-silicon solar cell provided by the invention, described n+ emitter layer implanted dopant kind is phosphorus P, arsenic As, antimony Sb, is preferably phosphorus P.
In the preparation method of efficient p-type crystal-silicon solar cell provided by the invention, described n+ emitter layer phosphorus P ion implantation energy 10 ~ 60keV, implantation dosage is 1 × 10
15~ 4 × 10
15cm
-2, implant angle is zero degree drift angle.
In the preparation method of efficient p-type crystal-silicon solar cell provided by the invention, heat-treat after described n+ emitter layer phosphorus P ion implantation, heat treatment temperature is 800 ~ 950 DEG C, heat treatment time 30sec ~ 60min.
In addition, the present invention also provides a kind of efficient n-type crystalline silicon solar cell, and the inverted pyramid structure of described N-shaped solar cell front surface has micro-suede structure, and described solar cell at least comprises: N-shaped crystalline silicon substrates, and surface has inverted pyramid structure; Have the p+ emitter layer of specific doping content, be positioned on N-shaped crystalline silicon substrates, p+ emitter layer surface has micro-suede structure; Front surface passivation layer, is positioned on p+ emitter layer, and surface has micro-suede structure; N+ base layer, is positioned under N-shaped crystalline silicon substrates; Back surface passivation layer, is positioned under n+ base layer; Through front surface passivation layer and back surface passivation layer, realize the emitter metal electrode and the base metal electrode that form ohmic contact with p+ emitter layer and n+ base layer respectively.
In efficient n-type crystalline silicon solar cell provided by the invention, described front surface passivation layer is silicon nitride or aluminium oxide/silicon nitride stack film, is preferably aluminium oxide/silicon nitride stack film.
In efficient n-type crystalline silicon solar cell provided by the invention, described back surface passivation layer is silicon nitride or silica/silicon nitride stack film, is preferably silicon nitride film.
In efficient n-type crystalline silicon solar cell provided by the invention, described alumina layer thickness is 5 ~ 20nm, and silicon nitride layer thickness is 20 ~ 100nm.
In efficient n-type crystalline silicon solar cell provided by the invention, described silicon oxide layer thickness is 5 ~ 20nm, and silicon nitride layer thickness is 20 ~ 100nm.
In addition, the present invention also provides a kind of preparation method of efficient N-shaped crystal-silicon solar cell, and described method at least comprises the following steps: step one, provides a N-shaped crystalline silicon material, prepares inverted pyramid structure at described surface of crystalline silicon; Step 2, prepares p+ emitter layer at the described upper surface having prepared the N-shaped crystalline silicon substrates of inverted pyramid structure; Step 3, in the micro-suede structure of the described emitter layer of p+ surface preparation; Step 4, prepares n+ base layer at the described N-shaped crystalline silicon substrates lower surface having prepared inverted pyramid structure; Step 5, prepares front surface passivation layer at the micro-suede body structure surface of described p+, at described n+ base layer surface preparation back surface passivation layer; Step 6, emitter metal electrode and base metal electrode are prepared in silk screen printing, and annealing realizes electrode ohmic contact.
In the preparation method of efficient N-shaped crystal-silicon solar cell provided by the invention, described p+ emitter layer and n+ base layer adopt diffusion or ion injection method preparation, preferably adopt ion injection method.
The micro-suede structure of described p+ emitter surface adopts RIE etching, or adopts volume ratio to be K
2cr
2o
7: HF:H
2o=1:2:5 ~ 1:2:10 or CrO
3: HF:H
2o=1:2:5 ~ 1:2:10 or AgNO
3: the solution corrosion preparation of HF=1:4 ~ 1:8, wherein K
2cr
2o
7the molar concentration of solution is 0.05 ~ 0.15mol/L; CrO
3the molar concentration of solution is 2 ~ 3mol/L; AgNO
3the molar concentration of solution is 0.01 ~ 0.03mol/L.
In the preparation method of efficient N-shaped crystal-silicon solar cell provided by the invention, described p+ emitter layer implanted dopant kind is boron, aluminium Al, gallium Ga, indium In, is preferably boron; Described n+ base stage pole layer implanted dopant kind is phosphorus P, arsenic As, antimony Sb, is preferably phosphorus P.
In the preparation method of efficient N-shaped crystal-silicon solar cell provided by the invention, it is B that described p+ emitter layer boron injects ion
+or BF
2 +, be preferably B
+ion, ion implantation energy 5 ~ 40keV, implantation dosage is 1 × 10
15~ 4 × 10
15cm
-2, implant angle is zero degree drift angle; Described n+ base layer phosphorus P ion implantation energy 10 ~ 60keV, implantation dosage is 1 × 10
15~ 4 × 10
15cm
-2, implant angle is zero degree drift angle.
In the preparation method of efficient N-shaped crystal-silicon solar cell provided by the invention, heat-treat after described p+ emitter layer boron ion implantation, heat treatment temperature is 950 ~ 1250 DEG C, heat treatment time 30sec ~ 60min; Heat-treat after described n+ base layer phosphorus P ion implantation, heat treatment temperature is 800 ~ 950 DEG C, heat treatment time 30sec ~ 60min.
Beneficial effect of the present invention is: propose a kind of surface with the p-type of micro-suede structure or N-shaped solar battery structure, improve solar cell performance; The invention provides simultaneously a kind of based on ion implantation technique, be applicable to the present invention propose the p-type of the micro-suede structure in surface or the technology of preparation method of N-shaped solar cell, overcome during conventional solar cell technique adopts High temperature diffusion technology to adulterate, it is uneven that doped layer exists; Cross pollution in the diffusion of front and rear surfaces boron phosphorus between impurity, the problems such as complex process, difficulty are large, are applicable to large-scale industrial production.
Accompanying drawing explanation
Fig. 1 is shown as one of the present invention efficient p-type crystal silicon solar battery structure.
The structural representation that each step of preparation method that Fig. 2 .1 to Fig. 2 .7 is shown as a kind of efficient p-type crystal silicon solar battery of the present invention presents.
Fig. 3 is shown as the reflection characteristic of the micro-suede body structure surface of n+ layer of the present invention.
Fig. 4 is shown as the efficient n-type crystalline silicon solar battery structure of one of the present invention.
The structural representation that each step of preparation method that Fig. 5 .1 to Fig. 5 .7 is shown as a kind of efficient n-type crystalline silicon solar cell of the present invention presents.
Fig. 6 is shown as the reflection characteristic of the micro-suede body structure surface of p+ layer of the present invention.
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to shown in accompanying drawing.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment one:
Refer to Fig. 1, the invention provides a kind of efficient p-type crystal silicon solar battery, described p-type solar cell front surface has inverted pyramid structure, and also has micro-suede structure on this structure.
Particularly, described efficient p-type crystal silicon solar battery at least comprises: p-type crystalline silicon substrates, and surface has inverted pyramid structure; Have the n+ emitter layer of specific doping content, be positioned on p-type crystalline silicon substrates, n+ surface has micro-suede structure; Front surface passivation layer, is positioned on n+ emitter layer, and surface has micro-suede structure; P+ base layer, is positioned under p-type crystalline silicon substrates; Form the base metal electrode of ohmic contact with p+ base layer, be positioned under p+ base layer; Through front surface passivation layer, form the emitter metal electrode of ohmic contact with n+ emitter layer.
Particularly, described front surface passivation layer is silicon nitride or silica/silicon nitride stack film, is preferably silica/silicon nitride stack film.
Particularly, described silicon oxide layer thickness is 5 ~ 20nm, and silicon nitride layer thickness is 20 ~ 100nm.
Embodiment two:
Refer to Fig. 2 .1 to Fig. 2 .7, the present invention also provides a kind of preparation method of efficient p-type crystal-silicon solar cell, described method at least comprises the following steps: step one, one p-type crystalline silicon material (as Fig. 2 .1) is provided, prepares inverted pyramid structure (as Fig. 2 .2) at described surface of crystalline silicon; Step 2, prepares n+ emitter layer (as Fig. 2 .3) at the described upper surface having prepared the p-type crystalline silicon substrates of inverted pyramid structure; Step 3, the described emitter layer of the n+ surface micro-suede structure of preparation (as Fig. 2 .4); Step 4, prepares front surface passivation layer (as Fig. 2 .5) at the micro-suede body structure surface of described n+; Step 5, emitter metal electrode and base metal electrode (as Fig. 2 .6) are prepared in silk screen printing; Step 6, electrode anneal prepares p+ base layer, and realizes electrode ohmic contact (as Fig. 2 .7).
Particularly, described n+ emitter layer adopts diffusion or ion injection method preparation, preferably adopts ion injection method.
Particularly, the micro-suede structure of described n+ emitter surface adopts p+ layer-selective one side chemical corrosion method to prepare, and RIE can be adopted to etch, or adopt volume ratio to be the K of 1:2:5 ~ 1:2:10
2cr
2o
7(molar concentration is roughly 0.05 ~ 0.15mol/L): HF:H
2o or CrO
3(molar concentration is roughly 2 ~ 3mol/L): HF:H
2the AgNO of O or 1:4 ~ 1:8
3(molar concentration is roughly 0.01 ~ 0.03mol/L): HF solution, etching time is 10sec ~ 5min.The reflection behavior of surface of micro-suede structure has been prepared as shown in Figure 3 on n+ layer surface.
Particularly, described n+ emitter layer implanted dopant kind is phosphorus P, arsenic As, antimony Sb, is preferably phosphorus P.
Particularly, described n+ emitter layer phosphorus P ion implantation energy 10 ~ 60keV, implantation dosage is 1 × 10
15~ 4 × 10
15cm
-2, implant angle is zero degree drift angle.
Particularly, heat-treat after described n+ emitter layer phosphorus P ion implantation, heat treatment temperature is 800 ~ 950 DEG C, heat treatment time 30sec ~ 60min.
Embodiment three:
Refer to Fig. 4, the invention provides a kind of efficient n-type crystalline silicon solar cell, described N-shaped solar cell front surface has inverted pyramid structure, and also has micro-suede structure on this structure.
Particularly, described efficient n-type crystalline silicon solar cell at least comprises: N-shaped crystalline silicon substrates, and surface has inverted pyramid structure; Have the p+ emitter layer of specific doping content, be positioned on N-shaped crystalline silicon substrates, surface has micro-suede structure; Front surface passivation layer, is positioned on p+ emitter layer, and surface has micro-suede structure; N+ base layer, is positioned under N-shaped crystalline silicon substrates; Back surface passivation layer, is positioned under n+ base layer; Through front surface passivation layer and back surface passivation layer, realize the emitter metal electrode and the base metal electrode that form ohmic contact with p+ emitter layer and n+ base layer respectively.
Particularly, described N-shaped crystalline silicon substrates material is monocrystal silicon substrate or polycrystalline silicon substrate, is preferably monocrystal silicon substrate.
Particularly, described front surface passivation layer is silicon nitride or aluminium oxide/silicon nitride stack film, is preferably aluminium oxide/silicon nitride stack film.
Particularly, described back surface passivation layer is silicon nitride or silica/silicon nitride stack film, is preferably silicon nitride film.
Particularly, described alumina layer thickness is 5 ~ 20nm, and silicon nitride layer thickness is 20 ~ 100nm.
Particularly, described silicon oxide layer thickness is 5 ~ 20nm, and silicon nitride layer thickness is 20 ~ 100nm.
Embodiment four:
Refer to Fig. 5 .1 to Fig. 5 .7, the present invention also provides a kind of preparation method of efficient N-shaped crystal-silicon solar cell, described method at least comprises the following steps: step one, one N-shaped crystalline silicon material (as Fig. 5 .1) is provided, prepares inverted pyramid structure (as Fig. 5 .2) at described surface of crystalline silicon; Rapid two, prepare p+ emitter layer (as Fig. 5 .3) at the described upper surface having prepared the N-shaped crystalline silicon substrates of inverted pyramid structure; Step 3, the described emitter layer of the p+ surface micro-suede structure of preparation (as Fig. 5 .4); Step 4, prepares n+ base layer (as Fig. 5 .5) at the described N-shaped crystalline silicon substrates lower surface having prepared inverted pyramid structure; Step 5, prepares front surface passivation layer at the micro-suede body structure surface of described p+, described n+ base layer surface preparation back surface passivation layer (as Fig. 5 .6); Step 6, preparation emitter metal electrode and base metal electrode (as Fig. 5 .7).
Particularly, described p+ emitter layer and n+ base layer adopt diffusion or ion injection method preparation, preferably adopt ion injection method.
Particularly, the micro-suede structure of described p+ emitter surface adopts p+ layer-selective one side chemical corrosion method to prepare, and RIE can be adopted to etch, or adopt volume ratio to be the K of 1:2:5 ~ 1:2:10
2cr
2o
7(molar concentration is roughly 0.05 ~ 0.15mol/L): HF:H
2o or CrO
3(molar concentration is roughly 2 ~ 3mol/L): HF:H
2the AgNO of O or 1:4 ~ 1:8
3(molar concentration is roughly 0.01 ~ 0.03mol/L): HF solution, etching time is 10sec ~ 5min.The reflection behavior of surface of micro-suede structure has been prepared as shown in Figure 6 on p+ layer surface.
Particularly, described p+ emitter layer implanted dopant kind is boron, aluminium Al, gallium Ga, indium In, is preferably boron; Described n+ base stage pole layer implanted dopant kind is phosphorus P, arsenic As, antimony Sb, is preferably phosphorus P.
Particularly, described p+ emitter layer boron injects ion is B
+or BF
2 +, be preferably B
+ion, ion implantation energy 5 ~ 40keV, implantation dosage is 1 × 10
15~ 4 × 10
15cm
-2, implant angle is zero degree drift angle; Described n+ base layer phosphorus P ion implantation energy 10 ~ 60keV, implantation dosage is 1 × 10
15~ 4 × 10
15cm
-2, implant angle is zero degree drift angle.
Particularly, heat-treat after described p+ emitter layer boron ion implantation, heat treatment temperature is 950 ~ 1250 DEG C, heat treatment time 30sec ~ 60min; Heat-treat after described n+ base layer phosphorus P ion implantation, heat treatment temperature is 800 ~ 950 DEG C, heat treatment time 30sec ~ 60min.
In sum, the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (17)
1. a crystal-silicon solar cell, is characterized in that: described crystal-silicon solar cell at least comprises:
Upper and lower surface is formed with the p-type crystalline silicon substrates of inverted pyramid structure;
Be formed at the n+ emitter layer of described p-type crystalline silicon substrates upper surface, described n+ emitter layer surface has micro-suede structure;
Be formed at the front surface passivation layer on described n+ emitter layer, described front surface passivation layer surface has micro-suede structure;
Be positioned at the p+ base layer of described p-type crystalline silicon substrates lower surface;
Be positioned under described p+ base layer and form the base metal electrode of ohmic contact with described p+ base layer;
Through described front surface passivation layer, form the emitter metal electrode of ohmic contact with described n+ emitter layer.
2. crystal-silicon solar cell according to claim 1, is characterized in that, described front surface passivation layer is silicon nitride or silica/silicon nitride stack film.
3. a crystal-silicon solar cell, is characterized in that: described crystal-silicon solar cell at least comprises:
Upper and lower surface is formed with the N-shaped crystalline silicon substrates of inverted pyramid structure;
Be formed at the p+ emitter layer of described N-shaped crystalline silicon substrates upper surface, described p+ emitter layer surface has micro-suede structure;
Be formed at the front surface passivation layer on described p+ emitter layer, described front surface passivation layer surface has micro-suede structure;
Be positioned at the n+ base layer of described N-shaped crystalline silicon substrates lower surface;
Be positioned at the back surface passivation layer on described n+ base layer surface;
Through described front surface passivation layer and back surface passivation layer, realize the emitter metal electrode and the base metal electrode that form ohmic contact with p+ emitter layer and n+ base layer respectively.
4. crystal-silicon solar cell according to claim 3, is characterized in that, described front surface passivation layer is silicon nitride or aluminium oxide/silicon nitride stack film.
5. crystal-silicon solar cell according to claim 2, is characterized in that, described front surface passivation layer is silica/silicon nitride stack film, and described silicon oxide layer thickness is 5 ~ 20nm, and silicon nitride layer thickness is 20 ~ 100nm.
6. crystal-silicon solar cell according to claim 4, is characterized in that, described front surface passivation layer is aluminium oxide/silicon nitride stack film, described alumina layer thickness 5 ~ 20nm, and silicon nitride layer thickness is 20 ~ 100nm.
7. a preparation method for crystal-silicon solar cell according to claim 1, is characterized in that, at least comprises the following steps:
Step one, provides the p-type crystalline silicon substrates that has a upper and lower surface, prepares inverted pyramid structure in described crystalline silicon substrates upper and lower surface;
Step 2, prepares n+ emitter layer at the described upper surface having prepared the p-type crystalline silicon substrates of inverted pyramid structure;
Step 3, forms micro-suede structure on described n+ emitter layer surface;
Step 4, prepares front surface passivation layer on the n+ emitter layer surface with micro-suede structure;
Step 5, then emitter metal electrode and base metal electrode are prepared in silk screen printing;
Step 6, electrode anneal prepares p+ base layer, and realizes electrode ohmic contact.
8. the preparation method of crystal-silicon solar cell according to claim 7, is characterized in that: described n+ emitter layer adopts diffusion or ion injection method preparation.
9. the preparation method of crystal-silicon solar cell according to claim 7, is characterized in that: described step 3 is adopt RIE etching or adopt volume ratio to be K in the method that described n+ emitter layer surface forms micro-suede structure
2cr
2o
7: HF:H
2o=1:2:5 ~ 1:2:10 or CrO
3: HF:H
2o=1:2:5 ~ 1:2:10 or AgNO
3: the solution corrosion preparation of HF=1:4 ~ 1:8; Wherein, described K
2cr
2o
7the molar concentration of solution is 0.05 ~ 0.15mol/L; Described CrO
3the molar concentration of solution is 2 ~ 3mol/L; Described AgNO
3the molar concentration of solution is 0.01 ~ 0.03mol/L, and etching time is 10sec ~ 5min.
10. the preparation method of crystal-silicon solar cell according to claim 8, is characterized in that: described n+ emitter layer adopts ion injection method preparation, and ion implanted impurity kind is phosphorus P, arsenic As or antimony Sb.
The preparation method of 11. crystal-silicon solar cells according to claim 10, is characterized in that: described ion implanted impurity kind is phosphorus P, and described phosphorus P ion implantation energy 10 ~ 60keV, implantation dosage is 1 × 10
15~ 4 × 10
15cm
-2, implant angle is zero degree drift angle.
The preparation method of 12. crystal-silicon solar cells according to claim 11, is characterized in that: also comprise heat treatment step after described phosphorus P ion implantation, described heat treatment temperature is 800 ~ 950 DEG C, heat treatment time 30sec ~ 60min.
The preparation method of 13. 1 kinds of crystal-silicon solar cells according to claim 3, is characterized in that, at least comprises the following steps:
Step one, provides the N-shaped crystalline silicon substrates that has a upper and lower surface, prepares inverted pyramid structure in described crystalline silicon substrates upper and lower surface;
Step 2, prepares p+ emitter layer at the described upper surface having prepared the N-shaped crystalline silicon substrates of inverted pyramid structure;
Step 3, forms micro-suede structure on described p+ emitter layer surface;
Step 4, prepares n+ base layer at the described N-shaped crystalline silicon substrates lower surface having prepared described inverted pyramid structure;
Step 5, prepares front surface passivation layer at the described p+ emitter layer upper surface with micro-suede structure, at described n+ base layer surface preparation back surface passivation layer;
Step 6, emitter metal electrode and base metal electrode are prepared in silk screen printing, and annealing realizes electrode ohmic contact.
The preparation method of 14. crystal-silicon solar cells according to claim 13, is characterized in that: the micro-suede structure of described p+ emitter surface adopts RIE etching or adopts volume ratio to be K
2cr
2o
7: HF:H2O=1:2:5 ~ 1:2:10 or CrO
3: HF:H
2o=1:2:5 ~ 1:2:10 or AgNO
3: the solution corrosion preparation of HF=1:4 ~ 1:8; Wherein, described K
2cr
2o
7the molar concentration of solution is 0.05 ~ 0.15mol/L; Described CrO
3the molar concentration of solution is 2 ~ 3mol/L; Described AgNO
3the molar concentration of solution is 0.01 ~ 0.03mol/L, and etching time is 10sec ~ 5min.
The preparation method of 15. crystal-silicon solar cells according to claim 13, is characterized in that: described p+ emitter layer adopts ion injection method preparation, and ion implanted impurity kind is boron, aluminium Al, gallium Ga or indium In; Described n+ base stage pole layer implanted dopant kind is phosphorus P, arsenic As or antimony Sb.
The preparation method of 16. crystal-silicon solar cells according to claim 15, is characterized in that: it is B that described p+ emitter layer boron injects ion
+or BF
2 +, ion implantation energy 5 ~ 40keV, implantation dosage is 1 × 10
15~ 4 × 10
15cm
-2, implant angle is zero degree drift angle; Described n+ base layer phosphorus P ion implantation energy 10 ~ 60keV, implantation dosage is 1 × 10
15~ 4 × 10
15cm
-2, implant angle is zero degree drift angle.
17. p+ emitter layers according to claim 16 and n+ base layer ion implantation preparation method, is characterized in that: heat-treat after described p+ emitter layer boron ion implantation, heat treatment temperature is 950 ~ 1250 DEG C, heat treatment time 30sec ~ 60min; Heat-treat after described n+ base layer phosphorus P ion implantation, heat treatment temperature is 800 ~ 950 DEG C, heat treatment time 30sec ~ 60min.
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| CN102270688A (en) * | 2010-06-01 | 2011-12-07 | 刘爱民 | Solar cell |
| CN102623546A (en) * | 2011-01-30 | 2012-08-01 | 无锡尚德太阳能电力有限公司 | Silicon chip texturing method and solar cell manufactured through using the method |
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