CN103337558A - Preparation method of N-type crystalline silicon double-side photovoltaic cells - Google Patents
Preparation method of N-type crystalline silicon double-side photovoltaic cells Download PDFInfo
- Publication number
- CN103337558A CN103337558A CN2013102368047A CN201310236804A CN103337558A CN 103337558 A CN103337558 A CN 103337558A CN 2013102368047 A CN2013102368047 A CN 2013102368047A CN 201310236804 A CN201310236804 A CN 201310236804A CN 103337558 A CN103337558 A CN 103337558A
- Authority
- CN
- China
- Prior art keywords
- cell substrate
- preparation
- type
- crystalline silicon
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of N-shaped crystalline silicon double-side photovoltaic cells. The combination of an ion implantation technology and a diffusion technology is utilized, or the ion implantation technology is utilized exclusively to prepare PN Junctions and back surface fields of illuminated surfaces. The process of repeated diffusion and masking in the prior art is omitted; the preparation technology of the conventional double-side photovoltaic cell is simplified; the manufacturing cost is reduced.
Description
Technical field
The present invention relates to a kind of preparation method of N-type crystalline silicon double side photovoltaic battery, belong to the photovoltaic cell field.
Background technology
Under the background that energy shortage, problem of environmental pollution become increasingly conspicuous, Renewable Energy Development has become the key subjects in the whole world, and utilizing solar energy then is an emphasis direction of Renewable Energy Development.
Since 2010, the sale of solar cell piece is from the seller's market to the buyer's market, the government affairs subsidy is significantly cut down, make the battery sheet get manufacturer and make great efforts to reduce the production cost of oneself, and the efficient that improves the battery sheet is exactly valid approach, not only reduced every watt production cost, and sold to such an extent that market is bigger; In the research and development of high-efficiency battery, the research and development of two-sided battery are very important a kind of batteries at present.Because this battery can utilize sunlight more fully, not only the sunlight of positive incident also has the scattered light at the back side etc., has improved the energy output of battery.And this kind battery is more suitable for architecture-integral, and application such as vertical installation.And the preparation method of existing two-sided battery has comprised the multistep diffusion technology, the whole process flow complexity, and the preparation cost height makes two-sided battery move towards market on a large scale and has run into bottleneck.
Summary of the invention
Goal of the invention: the present invention proposes a kind of preparation method of N-type crystalline silicon double side photovoltaic battery, has simplified existing double side photovoltaic battery preparation technology.
Technical scheme: the technical solution used in the present invention is a kind of preparation method of N-type crystalline silicon double side photovoltaic battery, comprises the silicon chip of choosing N-type, and this N-type silicon chip is carried out chemical cleaning and making herbs into wool obtains cell substrate, and is next further comprising the steps of:
1) makes PN junction at the sensitive surface of described cell substrate;
2) shady face in cell substrate forms heavily doped region;
3) at cell substrate sensitive surface deposition passivating film and antireflective coating;
4) shady face in cell substrate deposits antireflective coating;
5) both positive and negative polarity of making battery.
As a kind of improvement of the present invention, the described the 1st) use ion implantation technology to inject boron at sensitive surface in the step to form PN junction, ion beam energy is at 6-20KeV, and the ion injection rate is 1*10
14～9*10
15Cm
-2, annealing after ion injects and forming square resistance is the zone of 40～120 Ω/.
As a kind of improvement of the present invention, described 1) sensitive surface to cell substrate uses diffusion technology to carry out the boron diffusion in 800～1000 ℃ temperature range in the step, the square resistance of boron diffused region is 40～120 Ω/, removes back of the body knot, limit knot and Pyrex then.
As a further improvement on the present invention, the described the 3rd) use ion implantation technology to inject the phosphorus source at the shady face of N-type cell substrate in the step, ion beam energy is at 8-15KeV, and the ion injection rate is 1*10
15～7*10
15Cm
-2, annealing forms back of the body field then.
As a further improvement on the present invention, the described the 3rd) also can carry out the phosphorus diffusion in the step at the shady face of cell substrate, remove back of the body knot, limit knot and Pyrex then.
Beneficial effect: the present invention uses the combination of ion implantation technology and diffusion technology, perhaps uses ion implantation technology separately, makes PN at the photovoltaic cell sensitive surface, and makes back of the body field at shady face.Save repeatedly diffusion and the process of mask in the existing technology, simplified existing double side photovoltaic battery preparation technology, reduced production cost.
Embodiment
Below in conjunction with specific embodiment, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims institute restricted portion to the modification of various equivalents of the present invention.
Embodiment 1: the preparation method of a kind of N-type crystalline silicon double side photovoltaic battery that present embodiment adopts may further comprise the steps:
1) select the N-type silicon substrate, the resistivity of this N-type silicon chip, and is carried out matteization and is carried out chemical cleaning the n type single crystal silicon substrate surface between the 10 Ω cm at 0.3 Ω cm.For described n type single crystal silicon substrate, adopt rare NaOH or potassium hydroxide solution to go out the light trapping structure of Pyramid in the surface preparation of substrate, increase sunlight at the refraction number of times on surface, increase the light path of light in silicon substrate, improve the utilance of sunlight.Hydrochloric acid and hydrofluoric acid with dilution cleans subsequently, removes the impurity on surface.Obtain cell substrate like this.2) cell substrate of described N-type is put into diffusion furnace, under 800 ℃ condition, its sensitive surface is carried out the boron diffusion, used boron source is BBr
3, the square resistance of formation is 40 Ω/.
3) mixed solution of the nitric acid of the hydrofluoric acid of use 5～15% concentration and 50～70% concentration, etching is positioned at the PN junction at the cell substrate back side and edge, removes surperficial formed Pyrex simultaneously.
4) the shady face ion in cell substrate injects the phosphorus source, and the energy of its ion beam is 8KeV, and the ion injection rate is 1*10
15Cm
-2
5) cell substrate is put into annealing furnace, anneal in 800 ℃-1000 ℃ temperature range, purpose is the phosphorus source that active ions inject, and the silicon face of damage is repaired when ion injected, allows the phosphorus source of injecting form back of the body field.
6) at sensitive surface deposition of aluminium oxide and the silicon nitride film of cell substrate, under 400 ℃ temperature, atomic layer (ALD) deposits the alundum (Al of 5-10nm, and the used source of ALD can be Al (CH
3)
3And H
2O or O
3, also can be AlCl
3And H
2O.Perhaps adopt the alundum (Al of PCVD (PECVD) 5-10nm, used source can be Al (CH
3)
3And N
2O. adopt the method for PCVD (PECVD) to prepare 65nm to the thick silicon nitride antireflection film of 75nm on the surface of aluminium oxide then.7) shady face at silicon chip adopts the method for PCVD (PECVD) to prepare 73nm to the thick silicon nitride antireflection film of 86nm.
8) adopt screen printing technique to starch to form positive pole and the negative pole of battery at sensitive surface and the shady face difference printed silver aluminium paste of cell substrate with silver.After silk screen printing is finished, cell substrate is put into sintering furnace, under 700-900 ℃ temperature, carry out sintering, allow electrode metal and silicon form ohmic contact.
Embodiment 2: present embodiment the 2nd) cell substrate of described N-type is put into diffusion furnace in the step, under 1000 ℃ condition, its sensitive surface is carried out boron diffusion, used boron source is BBr
3, the square resistance of formation is 120 Ω/.
Present embodiment the 4th) inject the phosphorus source at the shady face ion of cell substrate in the step, the energy of its ion beam is 15KeV, the ion injection rate is 7*10
15Cm
-2
Other parts of present embodiment are identical with embodiment 1.
Embodiment 3: present embodiment the 2nd) cell substrate of described N-type is put into diffusion furnace in the step, under 900 ℃ condition, its sensitive surface is carried out boron diffusion, used boron source is BBr
3, the square resistance of formation is 80 Ω/.
Present embodiment the 4th) inject the phosphorus source at the shady face ion of cell substrate in the step, the energy of its ion beam is 11.5KeV, the ion injection rate is 4*10
15Cm
-2
Other parts of present embodiment are identical with embodiment 1.
Embodiment 4: the preparation method of a kind of N-type crystalline silicon double side photovoltaic battery that present embodiment adopts may further comprise the steps:
1) select the N-type silicon substrate, the resistivity of this N-type silicon chip, and is carried out matteization and is carried out chemical cleaning the n type single crystal silicon substrate surface between the 10 Ω cm at 0.3 Ω cm.For described n type single crystal silicon substrate, adopt rare NaOH or potassium hydroxide solution to go out the light trapping structure of Pyramid in the surface preparation of substrate, increase sunlight at the refraction number of times on surface, increase the light path of light in silicon substrate, improve the utilance of sunlight.Hydrochloric acid and hydrofluoric acid with dilution cleans subsequently, removes the impurity on surface.Obtain cell substrate like this.
2) the cell substrate sensitive surface to described N-type carries out the injection of boron source ion, and ion beam energy is 6KeV, and the ion injection rate is 1*10
14Cm
-2, the square resistance that the annealing back forms is 40 Ω/.
3) cell substrate is put into annealing furnace, anneal in 800 ℃-1000 ℃ temperature range, purpose is the boron source that active ions inject, and the silicon face that damages when ion injected is repaired.
4) the shady face ion in cell substrate injects the phosphorus source, and the energy of its ion beam is 8KeV, and the ion injection rate is 1*10
15Cm
-2
5) cell substrate is put into annealing furnace, anneal in 800 ℃-1000 ℃ temperature range, purpose is the phosphorus source that active ions inject, and the silicon face of damage is repaired when ion injected, allows the phosphorus source of injecting form back of the body field.
6) at sensitive surface deposition of aluminium oxide and the silicon nitride film of cell substrate, under 400 ℃ temperature, atomic layer (ALD) deposits the alundum (Al of 5-10nm, and the used source of ALD can be Al (CH
3)
3And H
2O or O
3, also can be AlCl
3And H
2O.Perhaps adopt the alundum (Al of PCVD (PECVD) 5-10nm, used source can be Al (CH
3)
3And N
2O. adopt the method for PCVD (PECVD) to prepare 65nm to the thick silicon nitride antireflection film of 75nm on the surface of aluminium oxide then.
7) shady face at silicon chip adopts the method for PCVD (PECVD) to prepare 73nm to the thick silicon nitride antireflection film of 86nm.
8) adopt screen printing technique to starch to form positive pole and the negative pole of battery at sensitive surface and the shady face difference printed silver aluminium paste of cell substrate with silver.After silk screen printing is finished, cell substrate is put into sintering furnace, under 700-900 ℃ temperature, carry out sintering, allow electrode metal and silicon form ohmic contact.
Embodiment 5: present embodiment the 2nd) the cell substrate sensitive surface of described N-type is carried out the boron source ion in the step and injects, ion beam energy is 20KeV, the ion injection rate is 9*10
15Cm
-2, the square resistance that the annealing back forms is 120 Ω/.
Present embodiment the 4th) inject the phosphorus source at the shady face ion of cell substrate in the step, the energy of its ion beam is 15KeV, the ion injection rate is 7*10
15Cm
-2
Other parts of present embodiment are identical with embodiment 4.
Embodiment 6: present embodiment the 2nd) the cell substrate sensitive surface of described N-type is carried out the boron source ion in the step and injects, ion beam energy is 13KeV, the ion injection rate is 4.5*10
15Cm
-2, the square resistance that the annealing back forms is 80 Ω/.
Present embodiment the 4th) inject the phosphorus source at the shady face ion of cell substrate in the step, the energy of its ion beam is 11.5KeV, the ion injection rate is 4*10
15Cm
-2
Other parts of present embodiment are identical with embodiment 4.
Embodiment 7: the preparation method of a kind of N-type crystalline silicon double side photovoltaic battery that present embodiment adopts may further comprise the steps:
1) select the N-type silicon substrate, the resistivity of this N-type silicon chip, and is carried out matteization and is carried out chemical cleaning the n type single crystal silicon substrate surface between the 10 Ω cm at 0.3 Ω cm.For described n type single crystal silicon substrate, adopt rare NaOH or potassium hydroxide solution to go out the light trapping structure of Pyramid in the surface preparation of substrate, increase sunlight at the refraction number of times on surface, increase the light path of light in silicon substrate, improve the utilance of sunlight.Hydrochloric acid and hydrofluoric acid with dilution cleans subsequently, removes the impurity on surface.Obtain cell substrate like this.
2) the cell substrate sensitive surface to described N-type carries out the injection of boron source ion, and ion beam energy is 6KeV, and the ion injection rate is 1*10
14Cm
-2, the square resistance that the annealing back forms is 40 Ω/.
3) cell substrate of described N-type is put into diffusion furnace and carried out the single face diffusion, under 800 ℃ condition, its sensitive surface is carried out the phosphorus diffusion, the square resistance of formation is 40 Ω/.
4) mixed solution of the nitric acid of the hydrofluoric acid of use 5～15% concentration and 50～70% concentration, etching is positioned at the PN junction of battery edge, removes surperficial formed Pyrex simultaneously.
5) at sensitive surface deposition of aluminium oxide and the silicon nitride film of cell substrate, under 400 ℃ temperature, atomic layer (ALD) deposits the alundum (Al of 5-10nm, and the used source of ALD can be Al (CH
3)
3And H
2O or O
3, also can be AlCl
3And H
2O.Perhaps adopt the alundum (Al of PCVD (PECVD) 5-10nm, used source can be Al (CH
3)
3And N
2O. adopt the method for PCVD (PECVD) to prepare 65nm to the thick silicon nitride antireflection film of 75nm on the surface of aluminium oxide then.
6) shady face at silicon chip adopts the method for PCVD (PECVD) to prepare 73nm to the thick silicon nitride antireflection film of 86nm.
7) adopt screen printing technique to starch to form positive pole and the negative pole of battery at sensitive surface and the shady face difference printed silver aluminium paste of cell substrate with silver.After silk screen printing is finished, cell substrate is put into sintering furnace, under 700-900 ℃ temperature, carry out sintering, allow electrode metal and silicon form ohmic contact.
Embodiment 8: present embodiment the 2nd) the cell substrate sensitive surface of described N-type is carried out the boron source ion in the step and injects, ion beam energy is 20KeV, the ion injection rate is 9*10
15Cm
-2, the square resistance that the annealing back forms is 120 Ω/.
Present embodiment the 4th) cell substrate of described N-type is put into diffusion furnace in the step, under 1000 ℃ condition, its sensitive surface is carried out phosphorus diffusion, the square resistance of formation is 120 Ω/.
Other parts of present embodiment are identical with embodiment 7.
Embodiment 9: present embodiment the 2nd) the cell substrate sensitive surface of described N-type is carried out the boron source ion in the step and injects, ion beam energy is 13KeV, the ion injection rate is 4.5*10
15Cm
-2, the square resistance that the annealing back forms is 80 Ω/.
Present embodiment the 4th) cell substrate of described N-type is put into diffusion furnace in the step, under 900 ℃ condition, its sensitive surface is carried out phosphorus diffusion, the square resistance of formation is 80 Ω/.
Other parts of present embodiment are identical with embodiment 7.
Claims (5)
1. the preparation method of a N-type crystalline silicon double side photovoltaic battery comprises the silicon chip of choosing N-type, and this N-type silicon chip is carried out chemical cleaning and making herbs into wool obtains cell substrate, it is characterized in that, and is further comprising the steps of:
1) makes PN junction at the sensitive surface of described cell substrate;
2) shady face in cell substrate forms heavily doped region;
3) at cell substrate sensitive surface deposition passivating film and antireflective coating;
4) shady face in cell substrate deposits antireflective coating;
5) both positive and negative polarity of making battery.
2. the preparation method of N-type crystalline silicon double side photovoltaic battery according to claim 1 is characterized in that, the described the 1st) use ion implantation technology to inject boron at sensitive surface in the step and form PN junction, ion beam energy is at 6-20KeV, and the ion injection rate is 1*10
14～9*10
15Cm
-2, annealing after ion injects and forming square resistance is the zone of 40～120 Ω/.
3. the preparation method of N-type crystalline silicon double side photovoltaic battery according to claim 1, it is characterized in that, described 1) sensitive surface to cell substrate uses diffusion technology to carry out the boron diffusion in 800～1000 ℃ temperature range in the step, the square resistance of boron diffused region is 40～120 Ω/, removes back of the body knot, limit knot and Pyrex then.
4. according to the preparation method of claim 2 or 3 described N-type crystalline silicon double side photovoltaic batteries, it is characterized in that, the described the 3rd) use ion implantation technology to inject the phosphorus source at the shady face of N-type cell substrate in the step, ion beam energy is at 8-15KeV, and the ion injection rate is 1*10
15～7*10
15Cm
-2, annealing forms back of the body field then.
5. the preparation method of N-type crystalline silicon double side photovoltaic battery according to claim 2 is characterized in that, the described the 3rd) shady face in cell substrate carries out the phosphorus diffusion in the step, removes back of the body knot, limit knot and Pyrex then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310236804.7A CN103337558B (en) | 2013-06-14 | 2013-06-14 | A kind of preparation method of N-type crystalline silicon double side photovoltaic battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310236804.7A CN103337558B (en) | 2013-06-14 | 2013-06-14 | A kind of preparation method of N-type crystalline silicon double side photovoltaic battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103337558A true CN103337558A (en) | 2013-10-02 |
| CN103337558B CN103337558B (en) | 2016-05-18 |
Family
ID=49245688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310236804.7A Expired - Fee Related CN103337558B (en) | 2013-06-14 | 2013-06-14 | A kind of preparation method of N-type crystalline silicon double side photovoltaic battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103337558B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996721A (en) * | 2014-05-16 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | N-type crystalline silicon two-sided battery and preparing method thereof |
| CN105489671A (en) * | 2015-12-28 | 2016-04-13 | 苏州中来光伏新材股份有限公司 | N-type double-sided solar cell and preparation method thereof |
| CN105702800A (en) * | 2014-11-27 | 2016-06-22 | 上海神舟新能源发展有限公司 | N-type double-face solar cell and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692466A (en) * | 2009-09-17 | 2010-04-07 | 中电电气（南京）光伏有限公司 | Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique |
| CN102339894A (en) * | 2010-07-23 | 2012-02-01 | 上海凯世通半导体有限公司 | Method for manufacturing solar cell |
| CN102386247A (en) * | 2010-09-03 | 2012-03-21 | 上海凯世通半导体有限公司 | Solar wafer and preparation method thereof |
| CN102683493A (en) * | 2012-05-27 | 2012-09-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of N-type crystalline silicon double-sided back contact solar cell |
-
2013
- 2013-06-14 CN CN201310236804.7A patent/CN103337558B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692466A (en) * | 2009-09-17 | 2010-04-07 | 中电电气（南京）光伏有限公司 | Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique |
| CN102339894A (en) * | 2010-07-23 | 2012-02-01 | 上海凯世通半导体有限公司 | Method for manufacturing solar cell |
| CN102386247A (en) * | 2010-09-03 | 2012-03-21 | 上海凯世通半导体有限公司 | Solar wafer and preparation method thereof |
| CN102683493A (en) * | 2012-05-27 | 2012-09-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of N-type crystalline silicon double-sided back contact solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996721A (en) * | 2014-05-16 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | N-type crystalline silicon two-sided battery and preparing method thereof |
| CN105702800A (en) * | 2014-11-27 | 2016-06-22 | 上海神舟新能源发展有限公司 | N-type double-face solar cell and preparation method thereof |
| CN105489671A (en) * | 2015-12-28 | 2016-04-13 | 苏州中来光伏新材股份有限公司 | N-type double-sided solar cell and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103337558B (en) | 2016-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102222726B (en) | Technology for manufacturing interlaced back contact (IBC) crystalline silicon solar battery with ion implantation | |
| CN107482079A (en) | Selective emitter junction and tunnel oxide high-efficiency N-type battery preparation method | |
| CN105489671A (en) | N-type double-sided solar cell and preparation method thereof | |
| CN108172658B (en) | A kind of preparation method of N-type hetero-junctions double-sided solar battery | |
| CN105826409B (en) | A kind of preparation method of local back field N-type solar cell | |
| Yadav et al. | c-Si solar cells formed from spin-on phosphoric acid and boric acid | |
| CN111477720A (en) | Passivated contact N-type back junction solar cell and preparation method thereof | |
| CN102931287A (en) | N-type battery slice and preparation method thereof | |
| WO2020211207A1 (en) | Bifacial solar cell and preparation method therefor | |
| CN103646992A (en) | Preparation method of P-type crystal silicon double-sided cell | |
| CN103646994A (en) | Preparation method of solar cell positive electrode | |
| CN107240621A (en) | A kind of method for making selective doping structure | |
| CN110459638A (en) | A kind of IBC battery and preparation method thereof of Topcon passivation | |
| CN103681971B (en) | A kind of preparation method of N-type back junction solar battery | |
| CN103996721A (en) | N-type crystalline silicon two-sided battery and preparing method thereof | |
| CN109378356A (en) | A kind of preparation method of IBC solar battery | |
| CN110571303B (en) | Preparation method of P-type crystalline silicon battery | |
| CN103208564B (en) | A kind of preparation method of crystal silicon solar energy battery | |
| Chen et al. | Self-Aligned Selective Area Front Contacts on Poly-Si/SiO x Passivating Contact c-Si Solar Cells | |
| CN102306664B (en) | Solar battery with black silicon structure on emitter and preparation method of solar battery | |
| CN103337558A (en) | Preparation method of N-type crystalline silicon double-side photovoltaic cells | |
| CN103996745A (en) | Method for manufacturing boron diffusion and phosphorus ion implantation combination solar cell capable of being produced in large-scale mode | |
| CN104134706B (en) | Graphene silicon solar cell and manufacturing method thereof | |
| CN105161552A (en) | Single surface polished N-type solar cell and preparation method thereof | |
| CN102683492B (en) | Preparation method of double-sided back contact crystalline silicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160518 Termination date: 20180614 |