CN209357742U - Three-knot laminated solar battery - Google Patents
Three-knot laminated solar battery Download PDFInfo
- Publication number
- CN209357742U CN209357742U CN201822071279.9U CN201822071279U CN209357742U CN 209357742 U CN209357742 U CN 209357742U CN 201822071279 U CN201822071279 U CN 201822071279U CN 209357742 U CN209357742 U CN 209357742U
- Authority
- CN
- China
- Prior art keywords
- layer
- battery
- gainp
- gaas
- type doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
This application involves a kind of three-knot laminated solar batteries.The three-knot laminated solar battery includes the bottom battery that successively lamination is arranged, intermediate cell and top battery, the bottom battery is connected with the intermediate cell by first tunnel junctions, the intermediate cell is connected with the top battery by the second tunnel junctions, wherein, the bottom battery is CIGS solar battery.The three-knot laminated solar battery Radiation hardness with higher provided by the embodiments of the present application.Meanwhile the three-knot laminated solar battery provided by the embodiments of the present application effectively reduces preparation cost.
Description
Technical field
This application involves area of solar cell, more particularly to a kind of three-knot laminated solar battery.
Background technique
Solar energy power generating obtains tremendous development in the whole world.Common solar battery generally comprises crystal silicon solar electricity
Pond, thin-film solar cells, GaAs (GaAs) solar battery etc..Wherein, reversed lattice mismatch three-knot laminated GaAs is too
Perfect match of the positive energy battery due to realizing sub- battery forbidden bandwidth and spectrum, has higher photoelectric conversion efficiency, therefore
The favor of people is obtained.Currently, the laboratory transfer efficiency of reversed lattice mismatch three-knot laminated gallium arsenide solar cell is
Realized 37.9% (AM1.5).
The reversed lattice mismatch three-knot laminated solar battery of traditional technology is mainly tri- knot of GaInP/GaInAs/GaInAs
Lamination solar cell.However, there are the anti-spokes of battery for the reversed lattice mismatch three-junction gallium arsenide three-knot laminated battery of traditional technology
According to the problem of performance difference.
Utility model content
Based on this, it is necessary to be directed to anti-radiation performance difference problem, provide a kind of three-knot laminated solar battery.
A kind of three-knot laminated solar battery, bottom battery, intermediate cell and top battery including the setting of successively lamination are described
Bottom battery is connected with the intermediate cell by first tunnel junctions, and the intermediate cell and the top battery pass through the second tunnel
Wear knot connection, wherein the bottom battery is CIGS solar battery.
The intermediate cell is GaAs solar battery in one of the embodiments,.
The GaAs solar battery includes the p-type doping Al of successively lamination setting in one of the embodiments,xGa1- xAs back surface field layer, the base area p-type doping GaAs, n-type doping GaAs emitter region and n-type doping AlxGa1-xAs Window layer, wherein the p
Type adulterates AlxGa1-xAs back surface field layer is connect with first tunnel junctions, the n-type doping AlxGa1-xAs Window layer and described second
Tunnel junctions connection.
The top battery is GaInP solar battery in one of the embodiments,.
The GaInP solar battery includes the p-type doping of successively lamination setting in one of the embodiments,
AlGaInP back surface field layer, the base area p-type doping GaInP, n-type doping GaInP emitter region and n-type doping AlInP Window layer, wherein institute
P-type doping AlGaInP back surface field layer is stated to connect with second tunnel junctions.
First tunnel junctions include the tunnel layer and bonded layer of lamination setting, the tunnel in one of the embodiments,
It wears layer to connect with the intermediate cell, the bonded layer is connect with the bottom battery.
The tunnel layer includes AlGaAs layers of the first p-type and the first N-shaped of lamination setting in one of the embodiments,
GaInP layers, GaInP layers of first N-shaped is connect with the bonded layer.
The bonded layer is made in one of the embodiments, of GaAs material.
The bottom battery includes substrate, the Mo back electrode, p-type CIGS of successively lamination setting in one of the embodiments,
Absorbed layer, CdS buffer layer, intrinsic i-ZnO layers and N-shaped ZnO:Al Window layer, wherein the N-shaped ZnO:Al Window layer with it is described
The connection of first tunnel junctions.
In one of the embodiments, second tunnel junctions include successively AlGaAs layer of the second p-type of lamination setting with
Second GaInP layers of N-shaped, GaInP layers of second p-type are connect with the intermediate cell, GaInP layers of second N-shaped with it is described
Push up battery connection.
Detailed description of the invention
Fig. 1 is the three-knot laminated solar battery structure schematic diagram that the application one embodiment provides；
Fig. 2 is the bottom battery structure schematic diagram that the application one embodiment provides；
Fig. 3 is the intermediate cell structural schematic diagram that the application one embodiment provides；
Fig. 4 is the top battery structure schematic diagram that the application one embodiment provides；
Fig. 5 is the three-knot laminated solar battery structure schematic diagram that the application one embodiment provides；
Fig. 6 is the tunnelling schematic diagram of a layer structure that the application one embodiment provides；
Fig. 7 is the second tunnelling node structure schematic diagram that the application one embodiment provides；
Fig. 8 is the three-knot laminated preparation method of solar battery flow diagram that the application one embodiment provides；
Fig. 9 is the GaInP/GaAs double knuckle battery structure schematic diagram that the application one embodiment provides；
Figure 10 is the bonding GaInP/GaAs double knuckle battery and the sub- battery of the CIGS that the application one embodiment provides
Method flow schematic diagram；
The method flow of the substrate for the removing GaInP/GaAs double knuckle battery that Figure 11 the application one embodiment provides shows
It is intended to；
The three-knot laminated solar battery structure schematic diagram that Figure 12 the application one embodiment provides.
Description of symbols:
Three-knot laminated solar battery 10
GaInP/GaAs double knuckle battery 11
GaAs substrate 111
GaAs buffer layer 112
AlAs sacrificial layer 113
GaInP etch stop layer 114
GaInP pushes up battery 115
GaAs intermediate cell 116
N-type doping GaAs cap layers 117
The sub- battery 12 of CIGS
GaInP/GaAs/CIGS battery 13
Bottom battery 100
Substrate 110
Mo back electrode 120
P-type CIGS absorbed layer 130
CdS buffer layer 140
Intrinsic i-ZnO layer 150
N-shaped ZnO:Al Window layer 160
Intermediate cell 200
P-type doping AlxGa1-xAs back surface field layer 210
The base area p-type doping GaAs 220
N-type doping GaAs emitter region 230
N-type doping AlxGa1-xAs Window layer 240
Push up battery 300
P-type doping AlGaInP back surface field layer 310
The base area p-type doping GaInP 320
N-type doping GaInP emitter region 330
N-type doping AlInP Window layer 340
First tunnel junctions 400
Tunnel layer 410
First p-type AlGaAs layer 411
First N-shaped GaInP layer 412
Bonded layer 420
Second tunnel junctions 500
Specific embodiment
In order to which the objects, technical solutions and advantages of the application are more clearly understood, by the following examples, and combine attached
Figure, is further elaborated the three-knot laminated solar battery and preparation method thereof of the application.It should be appreciated that this place
The specific embodiment of description only to explain the application, is not used to limit the application.
It is herein component institute serialization number itself, such as " first ", " second " etc., is only used for distinguishing described object,
Without any sequence or art-recognized meanings.And " connection ", " connection " described in the application, unless otherwise instructed, include directly and
It is indirectly connected with (connection).In the description of the present application, it is to be understood that term " on ", "lower", "front", "rear", " left side ",
The orientation of the instructions such as " right side ", "vertical", "horizontal", "top", "bottom", "inner", "outside", " clockwise ", " counterclockwise " or position are closed
System indicates to be based on the orientation or positional relationship shown in the drawings, being merely for convenience of description the application and simplifying description
Or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot understand
For the limitation to the application.
In this application unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with
It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below "
One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
Referring to Figure 1, the application one embodiment provides a kind of three-knot laminated solar battery 10 comprising successively lamination
Bottom battery 100, intermediate cell 200 and the top battery 300 of setting.The bottom battery 100 and the intermediate cell 200 pass through first
Tunnel junctions 400 connect.The intermediate cell 200 and the top battery 300 are connected by the second tunnel junctions 500.Wherein, the bottom
Battery 100 is CIGS (copper indium gallium selenide) solar battery.
The intermediate cell 200, the top battery 300 and second tunnel junctions 500 can use extension back growth
It is sequentially prepared.The bottom battery 100 is made of CIGS material.The bottom battery 100 can be Cu (In, Ga) Se2.Institute
Stating bottom battery 100 can be prepared by coevaporation method, can also be prepared by selenizing method after magnetron sputtering, can be with
It is prepared by other methods.The application to the preparation method of the bottom battery 100 and work without limitation, can be according to reality
The selection of border demand.The bottom battery 100 is connect with the intermediate cell 200 by first tunnel junctions 400.The bottom battery
100 can realize and connect by the methods of being bonded with the intermediate cell 200.
Fig. 2 is referred to, the bottom battery 100 may include the substrate 110 that successively lamination is arranged from bottom to top, Mo back electrode
120, p-type CIGS absorbed layer 130, CdS buffer layer 140, intrinsic i-ZnO layer 150 and N-shaped ZnO:Al Window layer 160.The N-shaped
ZnO:Al Window layer 160 is connect with first tunnel junctions 400.The CdS buffer layer 140 may be replaced by In (OH) xSy
Buffer layer made of material.Wherein, the substrate 110 can be made of materials such as soda-lime glass, stainless steel paillons.The Mo back
Electrode 120 can use Grown by Magnetron Sputtering.The thickness of the Mo back electrode 120 can be 1um-2um.The Mo back electrode
120 square resistances can be 0.1 Ω/sq-0.3 Ω/sq.The p-type CIGS absorbed layer 130 can be splashed using coevaporation or magnetic control
Rear selenizing growth is penetrated to be made.The thickness of the p-type CIGS absorbed layer 130 can be 1um-3um.The p-type CIGS absorbed layer 130
Doping concentration can be 1 × 1016-1×1017cm-3.The CdS buffer layer 140 can using chemical bath (CBD) growth and
At.The thickness of the CdS buffer layer 140 can be 30nm-80nm.The intrinsic i-ZnO layer 150 can be raw using magnetron sputtering
Length is made.The thickness of the intrinsic i-ZnO layer 150 can be 30nm-80nm.The N-shaped ZnO:Al Window layer 160 can use
Grown by Magnetron Sputtering is made.The thickness of the N-shaped ZnO:Al Window layer 160 can be 300nm-500nm.The N-shaped ZnO:Al
Square resistance 10-20 Ω/sq of Window layer 160.
The forbidden bandwidth of the top battery 300 may be about 1.86eV.The forbidden bandwidth of the intermediate cell 200 can be about
For 1.4eV.The forbidden bandwidth of the bottom battery 100 may be about 1.05eV.The top battery 300,200 and of the intermediate cell
The bottom battery 100 can be realized the basic matching of band gap and the solar spectrum of AM0 (outside atmospheric thermodynamics) with band gap as above combination,
Photoelectric conversion efficiency is consistent with reversed lattice mismatch (IMM) three-junction gallium arsenide battery.
In the present embodiment, the three-knot laminated solar battery 10 includes that successively the bottom battery 100 of lamination setting, centre are electric
Pond 200 and top battery 300.The bottom battery 100 and the intermediate cell 200 are connected by the first tunnel junctions 400.The centre
Battery 200 and the top battery 300 are connected by the second tunnel junctions 500.Wherein, the bottom battery 100 is CIGS solar-electricity
Pond.The three-knot laminated solar battery 10 provided in this embodiment is using CIGS solar battery as bottom battery, anti-radiation performance
Higher than InP system, GaAs system and Si system solar battery.Therefore, the three-knot laminated solar battery 10 anti-spoke with higher
According to ability.Meanwhile the three-knot laminated solar battery 10 provided in this embodiment, the forbidden bandwidth of the bottom battery 100 with
The difference of Ga content, can be adjusted in the range of 1.02eV-1.67eV.Therefore, it is right to can satisfy the intermediate cell 200
The area requirement of forbidden bandwidth, to improve the photoelectric conversion efficiency of the three-knot laminated solar battery 10.In addition, this implementation
The three-knot laminated solar battery 10 that example provides, preparation cost is low, and preparation method is simple.
Fig. 3 is referred to, in one embodiment, the intermediate cell 200 is GaAs (GaAs) solar battery.It is described
Intermediate cell 200 is made of GaAs semiconductor material.The GaAs solar battery may include that successively lamination is set from bottom to top
The p-type doping Al setxGa1-xAs back surface field layer 210, the base area p-type doping GaAs 220, n-type doping GaAs emitter region 230 and N-shaped are mixed
Miscellaneous AlxGa1-xAs Window layer 240.The p-type doping AlxGa1-xAs back surface field layer 210 is connect with first tunnel junctions 400, described
N-type doping AlxGa1-xAs Window layer 240 is connect with second tunnel junctions 500.
Wherein, the p-type doping AlxGa1-xThe thickness of As back surface field layer 210 can be 100nm-200nm；The p-type doping
The thickness of the base area GaAs 220 can be 1000nm-2000nm；The thickness of the n-type doping GaAs emitter region 230 can be
50nm-200nm；The n-type doping AlxGa1-xThe thickness of As Window layer 240 can be 30nm-100nm.
The p-type doping AlxGa1-xThe doping concentration of As back surface field layer 210 can be 1 × 1017-1×1019cm-3；The p
The doping concentration that type adulterates the base area GaAs can be 1 × 1016-1×1017cm-3；The doping of the n-type doping GaAs emitter region is dense
Degree can be 1 × 1017-1×1019cm-3；The n-type doping AlxGa1-xThe doping concentration of As Window layer 240 can for 1 ×
1017-1×1019cm-3.Wherein, 0.3≤x≤0.5.
Fig. 4 is referred to, in one embodiment, the top battery 300 is GaInP (gallium indium phosphorus) solar battery.It is described
Top battery 300 is made of GaInP semiconductor material.The top battery 300 may include the p-type that successively lamination is arranged from bottom to top
Adulterate AlGaInP back surface field layer 310, the base area p-type doping GaInP 320, n-type doping GaInP emitter region 330 and n-type doping AlInP
Window layer 340.The p-type doping AlGaInP back surface field layer 310 is connect with second tunnel junctions 500.
Wherein, the thickness of the p-type doping AlGaInP back surface field layer 310 can be 100nm-200nm；The p-type doping
The thickness of the base area GaInP 320 can be 500nm-1000nm；The thickness of the n-type doping GaInP emitter region 330 can be
50nm-100nm；The thickness of the n-type doping AlInP Window layer 340 can be 30nm-100nm.
The doping concentration of the p-type doping AlGaInP back surface field layer 310 can be 1 × 1017-1×1019cm-3；The p-type
The doping concentration for adulterating the base area GaInP 320 can be 1 × 1016-1×1017cm-3；The n-type doping GaInP emitter region 330
Doping concentration can be 1 × 1017-1×1019cm-3；The doping concentration of the n-type doping AlInP Window layer 340 can for 1 ×
1017-1×1019cm-3。
Fig. 5 is referred to, in one embodiment, first tunnel junctions 400 include the tunnel layer 410 and key of lamination setting
Close layer 420.The tunnel layer 410 is connect with the intermediate cell 200.The bonded layer 420 is connect with the bottom battery 100.
The tunnel layer 410 can be prepared with the bonded layer 420 by oppositely extending growth.The tunnel layer
410 for realizing the intermediate cell 200 and the bonded layer 420 connection.The bonded layer 420 is for realizing the tunnelling
The connection of layer 410 and the bottom battery 100.The thickness of the bonded layer 420 can be 50nm-100nm.
In the present embodiment, first tunnel junctions 400 include the tunnel layer 410 and the bonded layer of lamination setting
420.Increase the thickness of first tunnel junctions 400 by the bonded layer 420, thus be conducive to first tunnel junctions 400 with
The bonding of the bottom battery 100.
Fig. 6 is referred to, in one embodiment, the tunnel layer 410 includes the first p that successively lamination is arranged from bottom to top
Type AlGaAs layer 411 and the first N-shaped GaInP layer 412.The first N-shaped GaInP layer 412 is connect with the bonded layer 420.
The thickness of the first p-type AlGaAs layer 411 can be 10nm-100nm.The first p-type AlGaAs layer 411
Doping concentration can be 1 × 1018-1×1020cm-3.The thickness of the first N-shaped GaInP layer 412 can be 10nm-100nm.
The doping concentration of the first N-shaped GaInP layer 412 can be 1 × 1018-1×1020cm-3.The first p-type AlGaAs layer 411
It is connect with the bonded layer 420.The p-type doping of the first N-shaped GaInP layer 412 and the intermediate cell 200
AlxGa1-xAs back surface field layer 210 connects.
In one embodiment, the bonded layer 420 is made of GaAs material.The thickness of the bonded layer 420 can be
50nm-100nm.The bonded layer 420 can be n-type doping GaAs layers.N-type doping GaAs layers of the doping concentration can be
1×1018-1×1020cm-3.In the present embodiment, 420 GaAs materials of the bonded layer are made, and are more advantageous to the bottom battery
100 bonding, and be conducive to and the tunnel layer 410 combination and connection.
Fig. 7 is referred to, in one embodiment, second tunnel junctions 500 include successively lamination setting from bottom to top
Second p-type AlGaAs layer 510 and the second N-shaped GaInP layer 520.The second p-type GaInP layer 510 and the intermediate cell 200
Connection.The second N-shaped GaInP layer 520 is connect with the top battery 300.
The thickness of the second p-type AlGaAs layer 510 can be 10nm-100nm.The second p-type AlGaAs layer 510
Doping concentration can be 1 × 1018-1×1020cm-3.The thickness of the second N-shaped GaInP layer 520 can be 10nm-100nm.
The doping concentration of the second N-shaped GaInP layer 520 can be 1 × 1018-1×1020cm-3.The second p-type AlGaAs layer 510
With the n-type doping Al of the intermediate cell 200xGa1-xAs Window layer 240 connects.The second N-shaped GaInP layer 520 with
The p-type doping AlGaInP back surface field layer 310 connection of the top battery 300.
Fig. 8 is referred to, the application one embodiment provides a kind of preparation method of three-knot laminated solar battery, comprising:
S10, epitaxial growth prepare GaInP/GaAs double knuckle battery 11.
The preparation of the GaInP/GaAs double knuckle battery 11 can use metal-organic chemical vapor deposition equipment (MOCVD)
Technology growth forms, and can also be formed using molecular beam epitaxy (MBE) technology growth.The GaInP/GaAs double knuckle battery 11
Including the sub- battery of GaInP and the sub- battery of GaAs.The sub- battery of GaInP and the sub- battery of the GaAs pass through second tunnel junctions
500 connections.Specifically, the sub- battery of GaInP may include the p-type doping AlGaInP back of successively lamination setting from bottom to top
Field layer 310, the base area p-type doping GaInP 320, n-type doping GaInP emitter region 330, n-type doping AlInP Window layer 340.It is described
The sub- battery of GaAs may include the p-type doping Al that successively lamination is arranged from bottom to topxGa1-xAs back surface field layer 210, p-type doping GaAs
Base area 220, n-type doping GaAs emitter region 230 and n-type doping AlxGa1-xAs Window layer 240.The GaInP/GaAs double knuckle
Battery 11 includes substrate, and the substrate can be GaAs substrate 111.The application is to the GaInP/GaAs double knuckle battery 11
Specific preparation method, technique without limitation, as long as the preparation of the GaInP/GaAs double knuckle battery 11 may be implemented.
S20 prepares the sub- battery 12 of CIGS.
The sub- battery 12 of CIGS can be prepared by coevaporation method, can also pass through selenizing legal system after magnetron sputtering
It is standby to form, it can also be prepared by other methods.The application to the preparation method of the sub- battery of the CIGS 12 and work not
It limits, can select according to actual needs.The sub- battery 12 of CIGS may include the lining that successively lamination is arranged from bottom to top
Bottom 110, Mo back electrode 120, p-type CIGS absorbed layer 130, CdS buffer layer 140, intrinsic i-ZnO layer 150 and N-shaped ZnO:Al window
Layer 160.
In one embodiment, the method for preparing the sub- battery 12 of the CIGS includes:
S210 cleans 110 surface of substrate using materials such as soda-lime glass, stainless steel paillons as the substrate 110
Afterwards, using sputtering technology, the Mo thin layer for being about 1um-2um in the 110 surface sputtering sedimentation thickness of substrate, as the CIGS
The Mo back electrode 120 of sub- battery 12；
S220 in the 120 surface deposition thickness of Mo back electrode is about 1um- using selenizing method after evaporation or magnetron sputtering
The p-type CIGS absorbed layer 130 of 3um；
S230 in the 130 surface deposition thickness of p-type CIGS absorbed layer is about 30nm- using chemical water bath (CBD)
The CdS buffer layer 140 of 80nm；
S240, the institute for being about 30nm-80nm in the surface deposition thickness of the CdS buffer layer 140 using radio frequency sputtering method
State intrinsic i-ZnO layer 150；
S250 in the surface deposition thickness of the intrinsic i-ZnO layer 150 is about 300nm- using direct current magnetron sputtering process
The N-shaped ZnO:Al Window layer 160 of 500nm.
The forbidden bandwidth for the sub- battery 12 of the CIGS that the method provided in this embodiment is formed with Ga content not
Together, it can be adjusted in the range of 1.02eV-1.67eV.And the anti-radiation performance of the sub- battery 12 of CIGS is high.
The GaInP/GaAs double knuckle battery 11 and the sub- battery 12 of the CIGS are bonded by S30, generate GaInP/
GaAs/CIGS battery 13.
The S20 GaInP/GaAs double knuckle battery 11 generated and the S30 battery 12 of the CIGS generated are carried out
Bonding.The application such as specific method, step, the technique used are bonded without limitation, as long as the GaInP/GaAs may be implemented
The bonding of double knuckle battery 11 and the sub- battery 12 of the CIGS, generates the GaInP/GaAs/CIGS battery 13.
S40 removes the substrate of GaInP/GaAs double knuckle battery 11 described in the GaInP/GaAs/CIGS battery 13,
Form three-knot laminated solar battery 10.
Since the GaInP/GaAs/CIGS battery 13 that bonding generates includes the GaInP/GaAs double knuckle battery 11
Substrate, further include the substrate of the sub- battery 12 of the CIGS, it is therefore desirable to remove the GaInP/GaAs double knuckle battery 11
Substrate retains the substrate of the sub- battery 12 of the CIGS.The application is to removing 11 substrate of GaInP/GaAs double knuckle battery
Method and technique are not specifically limited, as long as may be implemented the substrate of the GaInP/GaAs double knuckle battery 11 from described
It is removed in GaInP/GaAs/CIGS battery 13.The three-knot laminated solar battery 10 is obtained after removing.
Antireflection layer and top electrode are deposited on 10 surface of three-knot laminated solar battery, that is, is completed folded to three knot
It is prepared by the technique of layer solar cell 10.
In the present embodiment, the method prepares GaInP/GaAs double knuckle battery 11, preparation CIGS by epitaxial growth
Battery 12, and the GaInP/GaAs double knuckle battery 11 and the sub- battery 12 of the CIGS are bonded, generate GaInP/GaAs/
Then CIGS battery 13 removes the lining of GaInP/GaAs double knuckle battery 11 described in the GaInP/GaAs/CIGS battery 13
Bottom forms three-knot laminated solar battery 10.First, the method provided in this embodiment is by the sub- battery 12 of the CIGS and institute
It states the bonding of GaInP/GaAs double knuckle battery 11 and generates the three-knot laminated solar battery 10, can effectively overcome reversed lattice
Mismatch bring microcell defect problem.Meanwhile by by the sub- battery of the CIGS 12 and the GaInP/GaAs double knuckle battery
11 bondings generate the three-knot laminated solar battery 10, and preparation process is simple, the three-knot laminated at low cost, and preparing
10 stable structure of solar battery.Second, the three-knot laminated solar battery 10 of the present embodiment the method preparation resists
Irradiation behaviour is higher than InP system, GaAs system and Si system solar battery.Therefore, the three of the method formation provided in this embodiment
Tie the Radiation hardness with higher of lamination solar cell 10.Three knot of third, the preparation of the present embodiment the method is folded
Layer solar cell 10, the forbidden bandwidth of the bottom battery 100, can be 1.02eV-1.67eV's with the difference of Ga content
Adjustment in range.Therefore, it can satisfy the GaInP/GaAs double knuckle battery 11 to the area requirement of forbidden bandwidth, to mention
The photoelectric conversion efficiency of the high three-knot laminated solar battery 10.4th, the GaInP/GaAs double knuckle battery of removing
11 substrate can reuse, and significantly reduce the preparation cost of battery.
Fig. 9 is referred to, in one embodiment, S10 includes:
S110, on 111 surface of GaAs substrate, successively epitaxial growth GaAs buffer layer 112, AlAs sacrificial layer 113, GaInP are rotten
Lose stop-layer 114, GaInP pushes up battery 115, the second tunnel junctions 500, GaAs intermediate cell 116, the first tunnel junctions 400, formation institute
State GaInP/GaAs double knuckle battery 11.Wherein, between the GaInP etch stop layer 114 and the top GaInP battery 115
It further include n-type doping GaAs cap layers 117.
In one embodiment, first tunnel junctions 400 include tunnel layer 410 and bonded layer 420.The tunnel layer
410 include the first p-type AlGaAs layer 411 and the first N-shaped GaInP layer 412.The bonded layer 420 is made of GaAs material.
The specific generation step of the GaInP/GaAs double knuckle battery 11 is as follows:
Selecting GaAs substrate 111 described in n-type doping is substrate, and the thickness of the GaAs substrate 111 can be 300um-
600um, the doping concentration of the GaAs substrate 111 can be 1 × 1017-1×1018cm-3.In one embodiment, described
The doping concentration of GaAs substrate 111 is 1 × 1018cm-3。
GaAs substrate 111 described in n-type doping is placed in MOCVD (metal-organic chemical vapor deposition equipment) operating room, in institute
State 111 surface of GaAs substrate successively GaAs buffer layer 112, the AlAs sacrificial layer 113 described in extension back growth, described
GaInP etch stop layer 114, the n-type doping GaAs cap layers 117, the GaInP push up battery 115, second tunnel junctions
500, the GaAs intermediate cell 116, the tunnel layer 410 and the bonded layer 420.Extension back growth temperature can be set
It is 500 DEG C -800 DEG C.The GaAs buffer layer 112 is the nucleating layer as growth GaAs sill.The GaAs buffer layer 112
Thickness can be 0.1um ﹣ 0.3um.The AlAs sacrificial layer 113 is being etched for realizing removing epitaxial growth substrate
Layer.The thickness of the AlAs sacrificial layer 113 can be 0.1um ﹣ 0.3um.The GaInP etch stop layer 114 is as removing
The corrosion control layer of epitaxial growth substrate.The thickness of the GaInP etch stop layer 114 can be 0.1um ﹣ 0.3um.The n
Type doping GaAs cap layers 117 are attached most importance to doped epitaxial layer.The n-type doping GaAs cap layers 117 form Ohmic contact with metal electrode.
The thickness of the n-type doping GaAs cap layers 117 can be 100nm ﹣ 500nm.The doping of the n-type doping GaAs cap layers 117 is dense
Degree can be 1 × 1018-1×1019cm-3.The thickness of the bonded layer 420 can be 50nm ﹣ 100nm.
The top GaInP battery 115 may include the p-type doping AlGaInP back surface field layer that successively lamination is arranged from bottom to top
310, the base area p-type doping GaInP 320, n-type doping GaInP emitter region 330 and n-type doping AlInP Window layer 340.Wherein, institute
The thickness for stating p-type doping AlGaInP back surface field layer 310 can be 100nm-200nm；The thickness of the base area the p-type doping GaInP 320
It can be 500nm-1000nm；The thickness of the n-type doping GaInP emitter region 330 can be 50nm-100nm；The N-shaped is mixed
The thickness of miscellaneous AlInP Window layer 340 can be 30nm-100nm.The doping concentration of the p-type doping AlGaInP back surface field layer 310
It can be 1 × 1017-1×1019cm-3；The doping concentration of the base area the p-type doping GaInP 320 can be 1 × 1016-1×
1017cm-3；The doping concentration of the n-type doping GaInP emitter region 330 can be 1 × 1017-1×1019cm-3；The N-shaped is mixed
The doping concentration of miscellaneous AlInP Window layer 340 can be 1 × 1017-1×1019cm-3.The forbidden band of the top GaInP battery 115 is wide
Degree is about 1.86eV.
The GaAs intermediate cell 116 may include the p-type doping Al that successively lamination is arranged from bottom to topxGa1-xAs back surface field
Layer 210, the base area p-type doping GaAs 220, n-type doping GaAs emitter region 230 and n-type doping AlxGa1-xAs Window layer 240.Its
In, the p-type doping AlxGa1-xThe thickness of As back surface field layer 210 can be 100nm-200nm；The base area the p-type doping GaAs
220 thickness can be 1000nm-2000nm；The thickness of the n-type doping GaAs emitter region 230 can be 50nm-200nm；
The n-type doping AlxGa1-xThe thickness of As Window layer 240 can be 30nm-100nm.The p-type doping AlxGa1-xAs back surface field layer
210 doping concentration can be 1 × 1017-1×1019cm-3；The doping concentration of the base area the p-type doping GaAs can for 1 ×
1016-1×1017cm-3；The doping concentration of the n-type doping GaAs emitter region can be 1 × 1017-1×1019cm-3；The N-shaped
Adulterate AlxGa1-xThe doping concentration of As Window layer 240 can be 1 × 1017-1×1019cm-3.Wherein, 0.3≤x≤0.5.It is described
The forbidden bandwidth of GaAs intermediate cell 116 is about 1.4eV.
In the present embodiment, the method by 111 surface of GaAs substrate successively epitaxial growth GaAs buffer layer 112,
AlAs sacrificial layer 113, GaInP etch stop layer 114, GaInP push up battery 115, the second tunnel junctions 500, GaAs intermediate cell
116, the first tunnel junctions 400 form the GaInP/GaAs double knuckle battery 11, and growth technique is simple.And it generates described
The three-knot laminated solar battery 10 that GaInP/GaAs double knuckle battery 11 and the sub- battery 12 of the CIGS bond together to form
Photoelectric conversion efficiency is high.Meanwhile compared with traditional technology, the GaInP/GaAs double knuckle battery 11 and institute are realized by bonding
The connection of the sub- battery 12 of CIGS is stated, reversed lattice mismatch bring microcell defect problem can be effectively overcome.
Referring to Figure 10, in one embodiment, S30 includes:
S310 polishes the GaInP/GaAs double knuckle battery 11 and sub- 12 surface of battery the CIGS.
By chemically mechanical polishing (CMP) technique to the bonded layer 420 of the GaInP/GaAs double knuckle battery 11
It is surface-treated with the N-shaped ZnO:Al Window layer 160 of the sub- battery 12 of the CIGS, so that the bonded layer 420 and institute
The surface roughness for stating N-shaped ZnO:Al Window layer 160 is down within 1nm.
S320, to after polishing the GaInP/GaAs double knuckle battery 11 and sub- 12 surface of battery the CIGS live
Change processing, and be bonded.
By after polishing the bonded layer 420 and 160 surface of N-shaped ZnO:Al Window layer clean, and with etc. from
Daughter carries out surface activation process.Then the bonded layer 420 and the N-shaped ZnO:Al Window layer 160 are bonded.It is described
GaInP/GaAs double knuckle battery 11 and the sub- battery 12 of the CIGS are fit together by Van der Waals force.
The GaInP/GaAs double knuckle battery 11 of fitting and the sub- battery 12 of the CIGS are carried out low temperature key by S330
It closes.
The GaInP/GaAs double knuckle battery 11 of fitting and the sub- battery 12 of the CIGS are placed in the bonding of bonder
Chamber.It is bonded intracavitary full of N2.The temperature for being bonded chamber is risen to 80 DEG C -120 DEG C, to the GaInP/GaAs double knuckle electricity of fitting
Pond 11 and the sub- battery 12 of the CIGS carry out preheating in -120 seconds 60 seconds.Then to the GaInP/GaAs double knuckle electricity of fitting
Pond 11 and the sub- battery 12 of the CIGS apply the bonding pressure of 1KN-5KN, will be bonded intracavitary temperature with the heating rate of 15 DEG C/min
Degree is promoted to 150 DEG C -250 DEG C.Then constant temperature is kept, bonding in -2 hours 1 hour is carried out.Finally, with the cooling speed of 3 DEG C/min
Bonding cavity temperature is dropped to room temperature by degree, realizes low-temperature bonding.
In the present embodiment, by carrying out surface to the GaInP/GaAs double knuckle battery 11 and the sub- battery 12 of the CIGS
Polishing treatment, then to after polishing the GaInP/GaAs double knuckle battery 11 and sub- 12 surface of battery the CIGS live
Change processing, and be bonded, then the GaInP/GaAs double knuckle battery 11 of fitting and the sub- battery 12 of the CIGS are carried out
Low-temperature bonding.The method provided through this embodiment realizes the GaInP/GaAs double knuckle battery 11 and CIGS
The bonding of battery 12, bonding method is simple to operation, and is bonded result and stablizes, and improves the three-knot laminated solar battery 10
Stability.
1 and Figure 12 referring to Figure 1, in one embodiment, S40 includes:
S410 corrodes the AlAs sacrificial layer 113.
Use AlAs sacrificial layer 113 described in corrosion corrosion.
S420 removes the GaAs substrate 111 and the GaAs buffer layer 112.
After corroding the AlAs sacrificial layer 113, the GaAs substrate 111 and the GaAs buffer layer 112 can be from described
It is removed in GaInP/GaAs/CIGS battery 13.The GaAs substrate 111 after removing can reuse, and reduce by three knot
The preparation cost of lamination solar cell 10.
The GaInP etch stop layer 114 is removed in S430, corrosion.
Use HCl:H2GaInP etch stop layer 114 described in the corrosion corrosion of O=1:1, by the GaInP etching-stop
Layer 114 is peeled off from the GaInP/GaAs/CIGS battery 13, completes substrate desquamation.It is finally clear with deionized water ultrasound again
The battery for washing into removing obtains the three-knot laminated solar battery 10 as shown in figure 12.
It is slow by corroding the AlAs sacrificial layer 113, the removing GaAs substrate 111 and the GaAs in the present embodiment
Layer 112 is rushed, then corrodes the removing GaInP etch stop layer 114.The method operating method provided in this embodiment is simple,
And the GaAs substrate 111 separated can reuse, and reduce preparation cost.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
The limitation to claim therefore cannot be interpreted as.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of three-knot laminated solar battery, which is characterized in that bottom battery (100), intermediate electricity including the setting of successively lamination
Pond (200) and top battery (300), the bottom battery (100) and the intermediate cell (200) are connected by the first tunnel junctions (400)
It connects, the intermediate cell (200) and the top battery (300) are connected by the second tunnel junctions (500), wherein the bottom battery
It (100) is CIGS solar battery.
2. three-knot laminated solar battery according to claim 1, which is characterized in that the intermediate cell (200) is
GaAs solar battery.
3. three-knot laminated solar battery according to claim 2, which is characterized in that the GaAs solar battery includes
The successively p-type doping Al of lamination settingxGa1-xAs back surface field layer (210), the base area p-type doping GaAs (220), n-type doping GaAs hair
Penetrate area (230) and n-type doping AlxGa1-xAs Window layer (240), wherein the p-type doping AlxGa1-xAs back surface field layer (210) with
First tunnel junctions (400) connection, the n-type doping AlxGa1-xAs Window layer (240) and second tunnel junctions (500)
Connection.
4. three-knot laminated solar battery according to claim 2, which is characterized in that the top battery (300) is GaInP
Solar battery.
5. three-knot laminated solar battery according to claim 4, which is characterized in that the GaInP solar battery packet
Include successively the p-type doping AlGaInP back surface field layer (310) of lamination setting, the base area p-type doping GaInP (320), n-type doping GaInP
Emitter region (330) and n-type doping AlInP Window layer (340), wherein the p-type doping AlGaInP back surface field layer (310) with it is described
Second tunnel junctions (500) connection.
6. three-knot laminated solar battery according to any one of claim 1 to 5, which is characterized in that first tunnel
Wear the tunnel layer (410) and bonded layer (420) that knot (400) includes lamination setting, the tunnel layer (410) and the intermediate cell
(200) it connects, the bonded layer (420) connect with the bottom battery (100).
7. three-knot laminated solar battery according to claim 6, which is characterized in that the tunnel layer (410) includes folded
The first p-type AlGaAs layers (411) of layer setting and GaInP layers of the first N-shaped (412), first N-shaped GaInP layers (412) and institute
State bonded layer (420) connection.
8. three-knot laminated solar battery according to claim 6, which is characterized in that the bonded layer (420) is GaAs
Material is made.
9. three-knot laminated solar battery according to claim 1, which is characterized in that the bottom battery (100) include according to
Substrate (110), the Mo back electrode (120), p-type CIGS absorbed layer (130), CdS buffer layer (140), intrinsic i- of secondary lamination setting
ZnO layer (150) and N-shaped ZnO:Al Window layer (160), wherein the N-shaped ZnO:Al Window layer (160) and first tunnelling
Tie (400) connection.
10. three-knot laminated solar battery according to claim 1, which is characterized in that the second tunnel junctions (500) packet
Include the second p-type AlGaAs layers (510) and GaInP layers of the second N-shaped (520) of successively lamination setting, AlGaAs layers of second p-type
(510) it is connect with the intermediate cell (200), GaInP layers of second N-shaped (520) is connect with the top battery (300).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822071279.9U CN209357742U (en) | 2018-12-11 | 2018-12-11 | Three-knot laminated solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822071279.9U CN209357742U (en) | 2018-12-11 | 2018-12-11 | Three-knot laminated solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209357742U true CN209357742U (en) | 2019-09-06 |
Family
ID=67798793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822071279.9U Active CN209357742U (en) | 2018-12-11 | 2018-12-11 | Three-knot laminated solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209357742U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524991A (en) * | 2020-04-20 | 2020-08-11 | 中山德华芯片技术有限公司 | GaInP/GaAs/CIGS triple-junction laminated solar cell and preparation method thereof |
| CN111524992A (en) * | 2020-04-20 | 2020-08-11 | 中山德华芯片技术有限公司 | GaInP/GaAs/HIT triple-junction laminated solar cell and preparation method thereof |
-
2018
- 2018-12-11 CN CN201822071279.9U patent/CN209357742U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524991A (en) * | 2020-04-20 | 2020-08-11 | 中山德华芯片技术有限公司 | GaInP/GaAs/CIGS triple-junction laminated solar cell and preparation method thereof |
| CN111524992A (en) * | 2020-04-20 | 2020-08-11 | 中山德华芯片技术有限公司 | GaInP/GaAs/HIT triple-junction laminated solar cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102184980B (en) | Wafer-bonding-based triple-junction solar cell and preparation method thereof | |
| CN103000759B (en) | Preparation method of gallium arsenide thin-film multijunction stacked solar cells | |
| CN102790120B (en) | GaInP/GaAs/Ge three-junction solar battery and manufacturing method thereof | |
| CN104465843A (en) | Double-sided growth GaAs four-junction solar cell | |
| CN101901854A (en) | Method for preparing InGaP/GaAs/InGaAs three-junction thin film solar cell | |
| CN209357742U (en) | Three-knot laminated solar battery | |
| CN109285909A (en) | A kind of multijunction solar cell and preparation method thereof | |
| CN104659158A (en) | Inverted multi-junction solar cell and manufacturing method thereof | |
| CN105762219B (en) | Cuprous oxide-based multi-lamination heterojunction solar cell and preparation method thereof | |
| CN102790116A (en) | Inverted GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof | |
| CN102790117B (en) | GaInP/GaAs/InGaNAs/Ge four-junction solar cell and preparation method thereof | |
| CN209357741U (en) | Three-knot laminated solar battery | |
| CN110491964A (en) | A kind of flexible double-sided solar battery and preparation method thereof | |
| CN106409958B (en) | Inverted triple-junction solar cell based on graphite substrate and preparation method thereof | |
| CN103000740B (en) | GaAs/GaInP double-junction solar battery and preparation method thereof | |
| CN204315612U (en) | Double-sided growth four-junction solar cell with quantum structure | |
| CN111312843A (en) | Three-junction laminated solar cell and preparation method thereof | |
| CN102779865B (en) | Silicon-based triple-junction solar battery using germanium as tunneling junction | |
| CN105355668A (en) | In(0.3)Ga(0.7)As cell with amorphous buffer layer structure and preparation method thereof | |
| CN105810760A (en) | Lattice-matched five-junction solar cell and fabrication method thereof | |
| CN102522505A (en) | Inorganic and organic hybrid solar cell | |
| CN102130206A (en) | Method for manufacturing silicon-doped indium arsenide/gallium arsenide quantum-dot solar cell | |
| CN110534612A (en) | Preparation method of reverse growth three-junction solar cell | |
| CN110556445A (en) | laminated parallel solar cell | |
| CN104218108B (en) | High-efficiency flexible thin film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210112 Address after: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee after: Deyun Chuangxin (Beijing) Technology Co.,Ltd. Address before: 100176 10th floor, building 2, yard 9, Ronghua South Road, Yizhuang Economic and Technological Development Zone, Daxing District, Beijing Patentee before: Juntai innovation (Beijing) Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right |