CN102522505A - Inorganic and organic hybrid solar cell - Google Patents
Inorganic and organic hybrid solar cell Download PDFInfo
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- CN102522505A CN102522505A CN2012100109293A CN201210010929A CN102522505A CN 102522505 A CN102522505 A CN 102522505A CN 2012100109293 A CN2012100109293 A CN 2012100109293A CN 201210010929 A CN201210010929 A CN 201210010929A CN 102522505 A CN102522505 A CN 102522505A
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Abstract
The invention discloses an inorganic and organic hybrid solar cell which mainly solves the problem of low efficiency and high cost of the traditional solar cell. The inorganic and organic hybrid solar cell comprises an SiC substrate (1), an AlN buffer layer (2), an inorganic epitaxial layer (3), a cathode (4), an organic polymer layer (5) and an anode (6), wherein the AlN buffer layer (2) has a thickness of 150-200nm and grows by adopting an MOCVD (Metal Organic Chemical Vapor Deposition); the cathode (4) is formed by depositing Ti and Al on a nitrogen surface n-GaN; the organic polymer layer (5) has a thickness of 50-800nm and is formed by spinning on the nitrogen surface n-GaN; the anode (6) is formed by depositing Au on the organic polymer layer (5); and the inorganic epitaxial layer (3) is the nitrogen surface n-GaN growing by the MOCVD, wherein the electron concentration of the nitrogen surface n-GaN is 1.0*10<17>cm<-3>-2.0*10<18>cm<-3>, a contact surface of the nitrogen surface and the cathode (4) is a smooth surface, and a contact surface of the nitrogen surface and the organic polymer layer (5) is a suede with a depth of 450nm-1.5mu m and a density of 1.0*10<7>cm<-2>-4.0*10<8>cm<-2>, and pits are distributed on the suede. The inorganic and organic hybrid solar cell has the characteristics of simple process, low cost and high photoelectric conversion efficiency, and can be used in commercial and civil power generation systems.
Description
Technical field
The invention belongs to microelectronics technology, particularly a kind of inorganic and organic substance hybrid solar cell.Can be used for commercial and civilian electricity generation system.
Technical background
Development of modern industry has strengthened demands for energy on the one hand, causes energy crisis, in the use of conventional energy resource, discharges great amount of carbon dioxide gas on the other hand, causes global " greenhouse effect ".For this reason, the dependence to conventional energy resource is tried hard to break away from by various countries, and the accelerated development regenerative resource is as a kind of very important regenerative resource.Safe and reliable, noiseless, pollution-free that solar energy has, energy is available anywhere, and not limited by the region; Need not consume fuel, mechanical rotating part, failure rate is low; Easy maintenance can unattended duty, and the construction period is short; Scale is random, need not the frame transmission line, and can make countries in the world be full of keen interest with advantages such as building combine easily to utilizing solar power generation.
Solar cell mainly is made up of light absorbing zone, electron transfer layer, hole transmission layer and two electrodes of negative and positive.After on the light absorbing zone of solar light irradiation at battery; Light absorbing zone absorbs solar photon and forms electron-hole pair through photon excitation and since in build electromotive force effect, excite the electronics of formation to arrive negative electrode through electron transfer layer; And the hole arrives anode through hole transmission layer; Make negative and positive the two poles of the earth form electrical potential difference, i.e. the output voltage of solar cell, thus realize by the conversion of luminous energy to electric energy.Traditional solar cell is divided into two kinds of inorganic solar cell and organic solar batteries basically.
The material of inorganic solar cell light absorbing zone, electron transfer layer and hole transmission layer is an inorganic material.For example wide because of its absorption spectrum ranges with the solar cell of silicon and GaAs preparation, carrier mobility is high, and diffusion length is long; Thermal stability is high; Characteristics such as mechanical strength is big and higher photoelectric conversion efficiency is arranged, but this inorganic solar cell cost is high, and toxicity is big; Material source is rare, is difficult to large-scale application.
The light absorbing zone of organic photovoltaic cell, electron transfer layer and hole transmission layer are organic material.It is low for example to be with dye-sensitized cell and organic polymer that the organic solar batteries of representative has a cost, and processing technology is simple, and is in light weight, characteristics such as ultra-thin and flexible, absorption coefficient height, very suitable large-area preparation and personalized application; But the mobility of charge carrier rate is crossed low than little 3 one magnitude of inorganic material in this organic substance material; Exciton diffusion length is short to be 10nm; Can't absorb 60% the infrared part energy that has accounted for whole energy in the solar spectrum, make that the photoelectric conversion efficiency of organic solar batteries is lower.Characteristics such as for this reason, people attempt the inorganic material absorption spectrum ranges is wide, and carrier mobility is high, and diffusion length is long, and thermal stability is high, and mechanical strength is big and organic advantages get up to prepare inorganic-organic mixed solar cell.
At present research is more is based on semiconductor material with wide forbidden band ZnO and TiO
2Hybrid solar cell; Though they do not absorb in visible-range; But has higher electronic transmission performance, synthesis technique is simple, with low cost; Low, the good stability of toxicity, the advantage that useful life is long has potential using value in inorganic nano-crystal-polymer solar battery field.Especially TiO
2Nano material, it can be prepared into the continuous structure of nanoporous, makes whole organic polymer can be filled in the middle of the pore, has not only reduced the thickness of device greatly, and has improved the open circuit voltage and the fill factor, curve factor of device, with the exception of this, TiO
2Can also be used as the optics separate layer, the efficient that helps to collect more electronics and then improve device.
Except TiO
2Outside two kinds of semiconductor material with wide forbidden band of ZnO, gallium nitride (GaN) material that also has developed recently to get up, it belongs to direct gap semiconductor, and it is wide to have a forbidden band, and carrier mobility is high, and thermal conductivity is high, and is high pressure resistant, high temperature resistant, anticorrosive, outstanding advantage such as radioresistance; But the hybrid solar cell of processing at present not only production cost is high, and its photoelectric conversion efficiency is still lower, the conversion efficiency less than 40% that it is maximum.
Summary of the invention
The objective of the invention is to deficiency, propose inorganic and organic hybrid solar cell and preparation method thereof,, reduce cost, enlarge its range of application to improve the efficient of mixing solar cell to above-mentioned prior art.
The technical thought that realizes the object of the invention is; Utilize nitrogen face GaN material in alkaline solution, to be easy to realize the characteristics of corrosion area; Through the surperficial suede raising organic macromolecule polymer compactedness of nitrogen face GaN, improve the performance of mixing solar cell, its technical scheme is following.
Battery of the present invention; Comprise from bottom to top: SiC substrate, AlN resilient coating, inorganic epitaxial loayer, negative electrode, organic polymer layers and anode; Wherein epitaxial loayer adopts nitrogen face n-GaN; And the nitrogen face n-GaN surf zone that contacts with negative electrode adopts the shiny surface structure, and the nitrogen face n-GaN surf zone that contacts with organic polymer layers adopts the suede structure that is covered with depression.
Said depression, its density are 1 * 10
7Cm
-2-4 * 10
8Cm
-2, the degree of depth is 450nm-1.5 μ m.
Prepare the method for the above-mentioned battery structure of the present invention, comprise the steps:
(A) on the SiC substrate, adopting MOCVD method growth thickness is the AlN resilient coating of 150-200nm;
(B) on the AlN resilient coating, adopting MOCVD method growth thickness is that 2-3 μ m, electron concentration are 1.0 * 10
17Cm
-3-2.0 * 10
18Cm
-3Nitrogen face n-GaN epitaxial loayer;
(C) specimen material that will grow behind the nitrogen face n-GaN epitaxial loayer is put into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively, repeat 2 times after with deionized water ultrasonic cleaning 10-15min;
(D) sample after cleaning is put into thermal evaporation station, the Ti of deposit 20nm and the Al of 80nm successively on nitrogen face n-GaN layer, and the 1min that in 600 ℃ thermal annealing stove, anneals constitute negative electrode;
(E) in beaker, adding concentration is the KOH solution of 15%-25%; Be heated to 70-90 ℃ with the general-purpose heating furnace; Also control the general-purpose heating furnace at any time with thermocouple thermo detector thermometric; After treating that solution temperature keeps balance 3-5min, the sample behind the making negative electrode is put into KOH solution carry out surface corrosion 10-20min, the nitrogen face n-GaN surf zone that contacts with negative electrode adopts the shiny surface structure; The nitrogen face n-GaN surf zone that contacts with organic polymer layers adopts the suede structure that is covered with depression, and the density of this depression is 1 * 10
7Cm
-2-4 * 10
8Cm
-2, the degree of depth is 450nm-1.5 μ m, accomplishes the surperficial matteization of nitrogen face n-GaN epitaxial loayer, treats that sample cooling back washes with deionized water;
(F) sample after the matteization is placed on the photoresist spinner; At nitrogen face n-GaN laminar surface spin coating one layer thickness is the organic polymer that 50-80nm, process diameter 450nm filter filter; With the 3000-3500rpm revolution; Behind the rotation 50-90s, sample is placed on the hot plate under 120 ℃ toasts 10min again, make the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts;
(G) sample that will accomplish above-mentioned preparation flow is put into Au and the organic polymer layers that thermal evaporation station deposit one layer thickness is 100nm and is formed the anode that Schottky contacts constitutes device, accomplishes the making of matte hybrid solar cell.
The present invention compared with prior art has following advantage:
1) advantage that the present invention is high with the inorganic material electron mobility is low with the organic material cost, advantage of simple technology combines and is made into the solar cell that mixes with Schottky contacts; Effectively reduce the cost of making solar cell, improved the efficient of existing mixing solar cell.Specifically, the present invention selects for use nitrogen face n-GaN as inorganic electron transfer layer, and its electron mobility is than ZnO, TiO
2Higher, the life-span of electronics is longer, and the electronics that negative electrode is collected is more, makes the short circuit current of battery bigger; Organic material adopts high conductivity, high transmission rate, and the organic polymer solar cell of high work function, not only the carrier collection rate is high, and manufacture craft is simple, with low cost.
2) the present invention is because the suede structure that is covered with depression is adopted on the nitrogen face n-GaN surface that contacts with organic polymer; With respect to smooth contact-making surface in the existing mixing solar cell, this matte makes nitrogen face GaN layer and organic contact area increase on the one hand, and the absorption area of light is increased; Thereby improve the utilance of light; Effectively reduced the interface on the other hand to sun reflection of light, improved the absorption of interface, the efficient of photoexcitation carrier is improved light; The external quantum efficiency of solar cell improves, and the photoelectric conversion efficiency of solar cell also improves thereupon.
3) to use the KOH of high temperature fused state to corrode with respect to gallium face GaN; The nitrogen face GaN that the present invention adopts can realize corrosion in the KOH dilute solution; Etching time and temperature are easy to control, the corrosion area breadth depth ratio is big; The not only easy abundant filling that realizes surperficial suedeization but also help organic polymer improves Solar cell performance.
Description of drawings
Fig. 1 is the inorganic and organic structure chart that mixes solar cell of the present invention;
Fig. 2 is a process chart of the present invention.
Embodiment
With reference to Fig. 1, battery structure of the present invention comprises from bottom to top: SiC substrate 1, AlN resilient coating 2, inorganic epitaxial loayer 3, negative electrode 4, organic polymer 5 and anode 6.Wherein, AlN resilient coating 2 adopts the growth of MOCVD method, and thickness is 150-200nm; Inorganic epitaxial loayer 3 is nitrogen face n-GaN, adopts the growth of MOCVD method, and thickness is that 2-3 μ m, electron concentration are 1.0 * 10
17Cm
-3-2.0 * 10
18Cm
-3, the nitrogen face n-GaN surf zone that contacts with negative electrode 4 adopts the shiny surface structure, and the nitrogen face n-GaN surf zone that contacts with organic polymer layers 5 adopts the suede structure that is covered with depression, and the density of its depression is 1 * 10
7Cm
-2-4 * 10
8Cm
-2, the degree of depth is 450nm-1.5 μ m; Negative electrode 4 be on nitrogen face n-GaN layer successively the Al of the Ti of deposit 20nm and 80nm form; Organic polymer 5 is to filter for the 450nm filter through diameter, and the nitrogen face n-GaN surface spin coating after making negative electrode forms, and thickness is 50-80nm; Anode 6 is Au of the 100nm of deposit on organic polymer layers.
With reference to Fig. 2, make battery of the present invention and provide following three kinds of embodiment:
The first step is 1050 ℃ in temperature, NH
3Be 3500sccm, TMAl is 30sccm, and the time is under the process conditions of 30min, and adopting MOCVD method growth thickness on the SiC substrate is the AlN resilient coating of 150nm.
Second step was 1020 ℃ in temperature, NH
3Be 5000sccm, TEGa is 220sccm, and the time is under 2.5 hours the process conditions, and adopting MOCVD method growth thickness on the AlN resilient coating is that 2.5 μ m, electron concentration are 1.0 * 10
17Cm
-3-2.0 * 10
18Cm
-3Nitrogen face n-GaN epitaxial loayer.
The 3rd step, the specimen material behind the growth nitrogen face n-GaN epitaxial loayer is put into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively, repeat 2 times after with deionized water ultrasonic cleaning 10min.
In the 4th step, sample after cleaning is put into thermal evaporation station, the Ti of deposit 20nm and the Al of 80nm successively on nitrogen face n-GaN layer, and the 1min that in 600 ℃ thermal annealing stove, anneals, formation negative electrode.
In the 5th step, the concentration that adding prepares in beaker is 15% KOH solution, is heated to 80 ℃ with the general-purpose heating furnace; Also control the general-purpose heating furnace at any time with thermocouple thermo detector thermometric; After treating that solution temperature keeps balance 5min, to put into above-mentioned concentration be that 15% KOH solution carries out surface corrosion 20min with making sample behind the negative electrode, is insoluble to above-mentioned solution owing to make metal Ti, the Al of negative electrode; The nitrogen face n-GaN surf zone that contacts with negative electrode is the shiny surface structure; The nitrogen face n-GaN surf zone that contacts with organic polymer layers is to form the suede structure that is covered with depression behind 15% the KOH solution corrosion owing to do not cover by concentration, and this depression density is 1 * 10
7Cm
-2-4 * 10
8Cm
-2, the degree of depth is 450-800nm, treats that sample cooling back washes with deionized water.
The 6th step, use diameter to filter organic polymer PANI solution as the 450nm filter, the sample after will annealing again is placed on the photoresist spinner; Drip full whole nitrogen face n-GaN laminar surface with sharp mouth suction pipe uniformly crossing the PANI solution that filters; With the 3300rpm revolution, rotate 70s then, forming thickness is the PANI organic membrane of 50nm; Again sample is placed on the hot plate under 120 ℃ baking 10min to remove organic solvent, makes the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts.
The 7th step; The sample of accomplishing above-mentioned preparation flow is put into thermal evaporation station; Deposit one layer thickness is the Au of 100nm and the anode that organic polymer layers forms Schottky contacts formation device on organic polymer PANI, accomplishes the making of matte hybrid solar cell.
The 1st step, adopt the MOCVD method, be 1050 ℃ with temperature, NH
3Be 3500sccm, TMAl is 30sccm, and the time is the process conditions of 30min, and growth thickness is the AlN resilient coating of 150nm on the SiC substrate.
The 2nd step, adopt the MOCVD method, be 1020 ℃ with temperature, NH
3Be 5000sccm, TEGa is 220sccm, and the time is 2 hours process conditions, and growth thickness is that 2 μ m, electron concentration are 1.0 * 10 on the AlN resilient coating
17Cm
-3-2.0 * 10
18Cm
-3Nitrogen face n-GaN epitaxial loayer.
The 3rd step, the sample behind the growth nitrogen face n-GaN epitaxial loayer is put into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively, repeat 2 times after with deionized water ultrasonic cleaning 15min;
In the 4th step, sample after cleaning is put into thermal evaporation station, the Ti of deposit 20nm and the Al of 80nm successively on nitrogen face n-GaN layer, and the 1min that in 600 ℃ thermal annealing stove, anneals, formation negative electrode.
In the 5th step, adding concentration is 20% KOH solution in beaker, is heated to 85 ℃ with the general-purpose heating furnace; Also control the general-purpose heating furnace at any time with thermocouple thermo detector thermometric; After treating that solution temperature keeps balance 5min, the sample behind the making negative electrode is put into KOH solution carry out surface corrosion 15min, be insoluble to above-mentioned solution owing to make metal Ti, the Al of negative electrode; The nitrogen face n-GaN surf zone that contacts with negative electrode is the shiny surface structure; The nitrogen face n-GaN surf zone that contacts with organic polymer layers is to form the suede structure that is covered with depression behind 20% the KOH solution corrosion owing to do not cover by concentration, and this depression density is 1 * 10
7Cm
-2-4 * 10
8Cm
-2, the degree of depth is 0.6-1.1 μ m, treats that sample cooling back washes with deionized water.
The 6th step; Use diameter to filter as the 450nm filter organic polymer PANI solution, the sample after will annealing again is placed on the photoresist spinner, drips full whole nitrogen face n-GaN laminar surface with sharp mouth suction pipe uniformly crossing the PANI solution that filters; With the 3000rpm revolution; Forming thickness behind the rotation 60s is the PANI organic membrane of 60nm, sample is placed on the hot plate under 120 ℃ toasts 10min again, makes the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts;
The 7th step; The sample of accomplishing above-mentioned preparation flow is put into thermal evaporation station; Deposit one layer thickness is the Au of 100nm on organic polymer PANI, forms the anode that Schottky contacts constitutes device with organic polymer layers, accomplishes the making of matte hybrid solar cell.
In the A step, on the SiC substrate, adopting MOCVD method growth thickness is the AlN resilient coating of 200nm, and its process conditions are: temperature is 1050 ℃, NH
3Be 3500sccm, TMAl is 30sccm, and the time is 40min.
In the B step, on the AlN resilient coating, adopting MOCVD method growth thickness is that 3 μ m, electron concentration are 1.0 * 10
17Cm
-3-2.0 * 10
18Cm
-3Nitrogen face n-GaN epitaxial loayer: its process conditions are: temperature is 1020 ℃, NH
3Be 5000sccm, TEGa is 220sccm, and the time is 3 hours.
C step, the specimen material behind the growth nitrogen face n-GaN epitaxial loayer is put into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively, repeat 2 times after with deionized water ultrasonic cleaning 10min.
D step, sample after cleaning is put into thermal evaporation station, the Ti of deposit 20nm and the Al of 80nm successively on nitrogen face n-GaN layer, and the 1min that in 600 ℃ thermal annealing stove, anneals, formation negative electrode.
In the E step, adding concentration is 25% KOH solution in beaker, is heated to 90 ℃ with the general-purpose heating furnace; Also control the general-purpose heating furnace at any time with thermocouple thermo detector thermometric; After treating that solution temperature keeps balance 3-5min, the sample behind the making negative electrode is put into KOH solution carry out surface corrosion 20min, be insoluble to above-mentioned solution owing to make metal Ti, the Al of negative electrode; The nitrogen face n-GaN surf zone that contacts with negative electrode is the shiny surface structure; The nitrogen face n-GaN surf zone that contacts with organic polymer layers is to form the suede structure that is covered with depression behind 25% the KOH solution corrosion owing to do not cover by concentration, and this depression density is 1 * 10
7Cm
-2-4 * 10
8Cm
-2, the degree of depth is 0.9-1.5 μ m, treats that sample cooling back washes with deionized water.
The F step; Use diameter to filter as the 450nm filter organic polymer PEDOT:PSS solution, the sample after will annealing again is placed on the photoresist spinner, drips full whole nitrogen face n-GaN laminar surface with sharp mouth suction pipe uniformly crossing the PEDOT:PSS solution that filters; Revolution with 2500rpm; Forming thickness behind the rotation 80s is the PEDOT:PSS organic membrane of 80nm, sample is placed on the hot plate under 120 ℃ toasts 10min again, makes the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts.
The G step; The sample of accomplishing above-mentioned preparation flow is put into thermal evaporation station; At organic polymer PEDOT:PSS surface deposition one layer thickness is the Au of 100nm, forms the anode that Schottky contacts constitutes device with organic polymer layers, accomplishes the making of matte hybrid solar cell.
Claims (5)
1. organic and inorganic hybrid solar cell; Comprise from bottom to top: SiC substrate (1), AlN resilient coating (2), inorganic epitaxial loayer (3), negative electrode (4), organic polymer layers (5) and anode (6); It is characterized in that inorganic epitaxial loayer (3) adopts nitrogen face n-GaN; And the nitrogen face n-GaN surf zone that contacts with negative electrode (4) adopts the shiny surface structure, and the nitrogen face n-GaN surf zone that contacts with organic polymer layers (5) adopts the suede structure that is covered with depression.
2. according to claims 1 described organic and inorganic hybrid solar cell, the density that it is characterized in that said depression is 1 * 10
7Cm
-2-4 * 10
8Cm
-2, the degree of depth is 450nm-1.5 μ m.
3. the manufacture method of an organic and inorganic hybrid solar cell comprises the steps:
(A) on the SiC substrate, adopting MOCVD method growth thickness is the AlN resilient coating of 150-200nm;
(B) on the AlN resilient coating, adopting MOCVD method growth thickness is that 2-3 μ m, electron concentration are 1.0 * 10
17Cm
-3-2.0 * 10
18Cm
-3Nitrogen face n-GaN epitaxial loayer;
(C) specimen material that will grow behind the nitrogen face n-GaN epitaxial loayer is put into acetone, absolute ethyl alcohol ultrasonic cleaning 3min respectively successively, repeat 2 times after with deionized water ultrasonic cleaning 10-15min;
(D) sample after cleaning is put into thermal evaporation station, the Ti of deposit 20nm and the Al of 80nm successively on nitrogen face n-GaN layer, and the 1min that in 600 ℃ thermal annealing stove, anneals constitute negative electrode;
(E) in beaker, adding concentration is the KOH solution of 15%-25%; Be heated to 70-90 ℃ with the general-purpose heating furnace; Also control the general-purpose heating furnace at any time with thermocouple thermo detector thermometric; After treating that solution temperature keeps balance 3-5min, the sample behind the making negative electrode is put into KOH solution carry out surface corrosion 10-20min, form shiny surface at the nitrogen face n-GaN surf zone that is contacting with negative electrode; Form the matte that is covered with depression at the nitrogen face n-GaN surf zone that contacts with organic polymer layers, the density of this depression is 1 * 10
7Cm
-2-4 * 10
8Cm
-2, the degree of depth is 450nm-1.5 μ m, treats that sample cooling back washes with deionized water;
(F) sample after the matteization is placed on the photoresist spinner; At nitrogen face n-GaN laminar surface spin coating one layer thickness is the organic polymer that 50-80nm, process diameter 450nm filter filter; With the 3000-3500rpm revolution; Behind the rotation 50-90s, sample is placed on the hot plate under 120 ℃ toasts 10min again, make the nitrogen face n-GaN layer after organic membrane and the matteization form good Schottky contacts;
(G) sample that will accomplish above-mentioned preparation flow is put into Au and the organic polymer layers that thermal evaporation station deposit one layer thickness is 100nm and is formed the anode that Schottky contacts constitutes device, accomplishes the making of matte hybrid solar cell.
4. the manufacture method of hybrid solar cell according to claim 3, wherein the described employing of step (1) MOCVD method growth thickness is the AlN resilient coating of 150-200nm, is to be 1050 ℃ in temperature, NH
3Be 3500sccm, TMAl is 30sccm, and the time is to carry out under the process conditions of 30-40min.
5. the manufacture method of hybrid solar cell according to claim 3, wherein the described employing of step (2) MOCVD method growth thickness is that 2-3 μ m, electron concentration are 1.0 * 10
17Cm
-3-2.0 * 10
18Cm
-3Nitrogen face n-GaN epitaxial loayer, be to be 1020 ℃ in temperature, NH
3Be 5000sccm, TEGa is 220sccm, and the time is to carry out under 2-3 hour the process conditions.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035310A (en) * | 2012-12-27 | 2013-04-10 | 长安大学 | Silicon carbide (SIC) transverse Schottky junction type mini-sized nuclear battery and manufacturing method thereof |
| CN104051044A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Series-connection sandwich-type epitaxy GaN PIN-type beta irradiation battery and preparation method |
| CN105932163A (en) * | 2016-05-20 | 2016-09-07 | 中国科学院宁波材料技术与工程研究所 | Solar cell and manufacture method thereof |
| CN110416414A (en) * | 2019-08-02 | 2019-11-05 | 华南师范大学 | A kind of ultraviolet detector and preparation method thereof |
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| CN102244116A (en) * | 2010-05-12 | 2011-11-16 | Lg电子株式会社 | Solar cell |
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| CN1486513A (en) * | 2001-01-15 | 2004-03-31 | 丰田合成株式会社 | Compound semiconductor element based on group III element nitride |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103035310A (en) * | 2012-12-27 | 2013-04-10 | 长安大学 | Silicon carbide (SIC) transverse Schottky junction type mini-sized nuclear battery and manufacturing method thereof |
| CN104051044A (en) * | 2014-06-29 | 2014-09-17 | 西安电子科技大学 | Series-connection sandwich-type epitaxy GaN PIN-type beta irradiation battery and preparation method |
| CN105932163A (en) * | 2016-05-20 | 2016-09-07 | 中国科学院宁波材料技术与工程研究所 | Solar cell and manufacture method thereof |
| CN110416414A (en) * | 2019-08-02 | 2019-11-05 | 华南师范大学 | A kind of ultraviolet detector and preparation method thereof |
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| CN102522505B (en) | 2014-08-20 |
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