CN219476695U - Double-sided gallium arsenide solar cell - Google Patents
Double-sided gallium arsenide solar cell Download PDFInfo
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- CN219476695U CN219476695U CN202320148469.4U CN202320148469U CN219476695U CN 219476695 U CN219476695 U CN 219476695U CN 202320148469 U CN202320148469 U CN 202320148469U CN 219476695 U CN219476695 U CN 219476695U
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Abstract
The embodiment of the utility model relates to a double-sided gallium arsenide solar cell, which sequentially comprises a back metal electrode, a first silicon carbide contact layer, a gallium arsenide solar cell body, a second silicon carbide contact layer and a front metal electrode from bottom to top, wherein highly doped polycrystalline or microcrystalline silicon carbide is used as the cell contact layer, and the performances of wide band gap, high conductivity and high refractive index are used as transparent conductive electrodes on two sides of the cell contact layer, so that light transmission on two sides is realized, the surface light transmission area is increased, the photoelectric conversion efficiency is improved, the electrode metal usage amount is reduced, and the cost is reduced.
Description
Technical Field
The utility model relates to the field of photovoltaic power generation, in particular to a double-sided gallium arsenide solar cell.
Background
Gallium arsenide solar cells are solar cells based on gallium arsenide (GaAs), and their development has been in the past 40 years. The eg=1.43 eV of GaAs materials, theoretically estimated, gaAs single junction solar cells can reach 27% efficiency, and GaAs solar cell technology has undergone several stages of development from LPE to MOCVD, homoepitaxy to heteroepitaxy, single junction to multi-junction stacked structures from the last 80 th century, with increasingly faster development speeds and ever increasing efficiency.
Compared with silicon-based solar cells, gallium arsenide solar cells have higher photoelectric conversion efficiency, stronger irradiation resistance and better high temperature resistance. However, because of high cost, the gallium arsenide solar cell is difficult to popularize in the civil field, and the design of new materials and new structures is important for gallium arsenide solar cells with low cost and guaranteed photoelectric conversion efficiency.
Disclosure of Invention
Aiming at the defects of the prior art, the utility model provides a double-sided gallium arsenide solar cell, which uses high-doped polycrystalline or microcrystalline silicon carbide as a cell contact layer and uses the performances of wide band gap, high conductivity and high refractive index of the high-doped polycrystalline or microcrystalline silicon carbide as transparent conductive electrodes on two sides, so that light transmission on two sides is realized, the surface light transmission area is increased, the photoelectric conversion efficiency is improved, the electrode metal usage amount is reduced, and the cost is reduced.
In view of this, the double-sided gallium arsenide solar cell structure sequentially comprises, from bottom to top, a back metal electrode, a first silicon carbide contact layer, a gallium arsenide solar cell body, a second silicon carbide contact layer, and a front metal electrode, wherein the first silicon carbide contact layer and the second silicon carbide contact layer are both doped polycrystalline or microcrystalline silicon carbide.
Preferably, the front metal electrode is one or more of Ti/Al, ti, al, ag, cu and the back metal electrode is one or more of Ni/Cr, ni, ti, al, ag, cu.
Preferably, the thicknesses of the first silicon carbide contact layer and the second silicon carbide contact layer are 1-30 micrometers, and the doping concentration range is 5 multiplied by 10 18 ～1×10 20 cm -3 。
Preferably, the gallium arsenide solar cell body is single junction, double junction, triple junction or multi-junction, and the gallium arsenide solar cell body structure comprises a substrate layer, a buffer layer, a cell layer, a window layer and a high-doped contact layer from bottom to top.
Preferably, the first silicon carbide contact layer is a P-type silicon carbide film layer, the second silicon carbide contact layer is an N-type silicon carbide film layer, or the first silicon carbide contact layer is an N-type silicon carbide film layer, and the second silicon carbide contact layer is a P-type silicon carbide film layer.
Further preferably, the doping element of the P-type silicon carbide film layer is aluminum or boron, and the doping element of the N-type silicon carbide film layer is nitrogen.
According to the double-sided gallium arsenide solar cell provided by the embodiment of the utility model, the polycrystalline or microcrystalline silicon carbide material is used in the structure of the double-sided gallium arsenide solar cell, from the standpoint of material performance, the silicon carbide has the advantages of high conductivity, wide band gap, easy regulation and control of doping concentration and the like, and the heavily doped polycrystalline silicon carbide can realize good transverse carrier transportation under the condition of wide band gap, so that the transparent conductive electrode layer of the cell is used for realizing effective collection of current, the use of surface metal grid lines is reduced, a low-cost and high-efficiency structure is provided for the gallium arsenide solar cell, and the polycrystalline or microcrystalline silicon carbide can be safely produced in a large area and at low cost by utilizing a magnetron sputtering method from the standpoint of production and manufacture and is compatible with the production and manufacture process of the solar cell.
Drawings
Fig. 1 is a schematic structural diagram of a double-sided gallium arsenide solar cell according to an embodiment of the present utility model;
fig. 2 is a flowchart of a method for manufacturing a double-sided gallium arsenide solar cell according to an embodiment of the present utility model.
Detailed Description
The technical scheme of the utility model is further described in detail through the drawings and the embodiments.
Fig. 1 is a schematic structural diagram of a double-sided gallium arsenide solar cell according to an embodiment of the present utility model, as shown in fig. 1, the double-sided gallium arsenide solar cell structure sequentially includes, from bottom to top, a back metal electrode 1, a first silicon carbide contact layer 2, a gallium arsenide solar cell body 3, a second silicon carbide contact layer 4, and a front metal electrode 5, where the first silicon carbide contact layer 2 and the second silicon carbide contact layer 4 are doped with polycrystalline or microcrystalline silicon carbide.
Wherein the front metal electrode 5 may be one or more of Ti/Al, ti, al, ag, cu and the back metal electrode 1 may be one or more of Ni/Cr, ni, ti, al, ag, cu.
The thicknesses of the first silicon carbide contact layer 2 and the second silicon carbide contact layer 4 are preferably 1-30 micrometers, and the doping concentration range is preferably 5×10 18 ～1×10 20 cm -3 。
It should be noted that, the first silicon carbide contact layer may be a P-type or N-type microcrystalline or polycrystalline silicon carbide film layer, and the second silicon carbide contact layer may be an N-type or P-type microcrystalline or polycrystalline silicon carbide film layer, specifically, when the first silicon carbide contact layer is a P-type microcrystalline or polycrystalline silicon carbide film layer, the second silicon carbide contact layer is an N-type microcrystalline or polycrystalline silicon carbide film layer, and when the first silicon carbide contact layer is an N-type microcrystalline or polycrystalline silicon carbide film layer, the second silicon carbide contact layer is a P-type microcrystalline or polycrystalline silicon carbide film layer, wherein the doping elements of the P-type silicon carbide film layer include, but are not limited to, aluminum or boron, and the doping elements of the N-type silicon carbide film layer include, but are not limited to, nitrogen.
It should be appreciated that silicon carbide has the advantages of wide band gap, high conductivity, simple and safe preparation process, etc., and replaces the surface gate line electrode in terms of performance and production process.
Further, the gallium arsenide solar cell body 3 may be a single junction, double junction, triple junction or multi-junction gallium arsenide solar cell, and the main structure comprises a substrate layer, a buffer layer, a cell layer, a window layer and a highly doped contact layer from bottom to top.
The working process of the double-sided gallium arsenide solar cell in the embodiment is that sunlight irradiates on the surface of the cell, the front side irradiates on the gallium arsenide solar cell body 3 through the second silicon carbide contact layer 4 to generate current, and some diffuse reflected sunlight irradiates on the back side of the gallium arsenide solar cell body 3 through the first silicon carbide contact layer 2 to generate current. The current is collected through the silicon carbide contact layers 2, 4 on both sides, and is led out through the back metal electrode 1 and the front metal electrode 5. Compared with the existing battery, the use of the surface metal grid line is omitted, the production cost of the battery is greatly reduced, meanwhile, the silicon carbide contact layer is used, light is transmitted from two sides, the surface light transmission area is increased, and the photoelectric conversion efficiency is improved.
The polycrystalline or microcrystalline silicon carbide material is used in the structure of the double-sided gallium arsenide solar cell, from the standpoint of material performance, the silicon carbide has the advantages of high conductivity, wide band gap, easy regulation and control of doping concentration and the like, and the heavily doped polycrystalline silicon carbide can realize good transverse carrier transport under the condition of wide band gap, so that the polycrystalline silicon carbide can be used as a transparent conductive electrode layer of the cell to realize effective collection of current, reduce the use of surface metal grid lines and provide a low-cost and high-efficiency structure for the gallium arsenide solar cell.
The embodiment of the utility model also provides a preparation method of the double-sided gallium arsenide solar cell, as shown in fig. 2, the preparation method comprises the following steps:
and 101, placing the gallium arsenide solar cell epitaxial wafer into a grinder to thin the substrate to a thickness of 100-150 microns, and polishing the thinned substrate by using a chemical solution or chemical mechanical polishing mode.
It can be appreciated that the gallium arsenide solar cell epitaxial wafer can be single junction, double junction, triple junction or multi-junction, and the chemical solution can be NH 4 OH/H 2 O 2 Solution, NH 4 OH/H 2 O 2 The volume ratio of the solution is preferably NH 4 OH:H 2 O 2 Substrate thickness was controlled to around 100 microns according to its etch rate =1:8.
And 102, cleaning the polished gallium arsenide solar cell epitaxial wafer.
Specifically, sequentially washing with acetone, isopropanol and deionized water to remove surface particles, organic pollutants, surface metal ions and the like, and then putting into HCl/H 2 Cleaning in O solution, washing with deionized water, and removing surface stain, wherein the HCl/H ratio is 2 The volume ratio of the O solution is preferably 1:1.
And step 103, depositing a microcrystalline or polycrystalline silicon carbide film layer on the back surface of the cleaned gallium arsenide solar cell epitaxial wafer to obtain a first silicon carbide contact layer.
Specifically, a microcrystalline or polycrystalline silicon carbide target material is used to deposit a microcrystalline or polycrystalline silicon carbide film layer on the back surface of the cleaned gallium arsenide solar cell epitaxial wafer by utilizing a magnetron sputtering technology to obtain a first silicon carbide contact layer, wherein the thickness of the first silicon carbide contact layer is preferably 1-30 micrometers, and the doping concentration range is preferably 5 multiplied by 10 18 ～1×10 20 cm -3 。
And 104, depositing a microcrystalline or polycrystalline silicon carbide film layer on the front surface to obtain a second silicon carbide contact layer.
Specifically, a microcrystalline or polycrystalline silicon carbide film layer is deposited on the front surface of the epitaxial wafer on which the first silicon carbide contact layer is deposited in the step 103 by using a microcrystalline or polycrystalline silicon carbide target material through a magnetron sputtering technology, so as to obtain a second silicon carbide contact layer, wherein the thickness of the second silicon carbide contact layer is preferably 1-10 micrometers, and the doping concentration range is preferably 5×10 micrometers 18 ～1×10 20 cm -3 。
It should be noted that, the sequence of steps 103 and 104 may be exchanged, where the first silicon carbide contact layer may be a P-type or N-type microcrystalline or polycrystalline silicon carbide film layer, and the second silicon carbide contact layer may be an N-type or P-type microcrystalline or polycrystalline silicon carbide film layer, specifically, when the first silicon carbide contact layer is a P-type microcrystalline or polycrystalline silicon carbide film layer, the second silicon carbide contact layer is an N-type microcrystalline or polycrystalline silicon carbide film layer, and when the first silicon carbide contact layer is an N-type microcrystalline or polycrystalline silicon carbide film layer, the second silicon carbide contact layer is a P-type microcrystalline or polycrystalline silicon carbide film layer, where the doping element of the P-type silicon carbide film layer includes, but is not limited to, aluminum or boron, and the doping element of the N-type silicon carbide film layer includes, but is not limited to, nitrogen.
At step 105, a back metal electrode is deposited on the first silicon carbide contact layer and a front metal electrode is deposited on the second silicon carbide contact layer using a hard mask.
Specifically, the hard mask is used to deposit the back metal electrode and the front metal electrode on the first silicon carbide contact layer and the second silicon carbide contact layer by adopting electron beam evaporation or magnetron sputtering, and preferably, the front metal electrode and the back metal electrode are point-shaped metals.
Further, the front metal electrode may be one or more of Ti/Al, ti, al, ag, cu and the back metal electrode may be one or more of Ni/Cr, ni, ti, al, ag, cu.
The preparation method of the double-sided gallium arsenide solar cell provided by the embodiment of the utility model adopts polycrystalline or microcrystalline silicon carbide to produce the double-sided gallium arsenide solar cell safely, in a large area and at low cost by utilizing a magnetron sputtering method, and is compatible with the production and manufacturing process of the solar cell.
In order to better understand the technical scheme provided by the utility model, the following specific processes of the preparation method of the double-sided gallium arsenide solar cell provided by the embodiment of the utility model and the prepared cell characteristics are respectively described in a plurality of specific examples, and are compared and described in comparative examples.
Example 1
The embodiment provides a method for preparing a double-sided gallium arsenide solar cell by selecting a single-sided gallium arsenide solar cell epitaxial wafer, and the specific structure is shown in the following table 1:
TABLE 1
The preparation method of the double-sided gallium arsenide solar cell comprises the following steps:
1. the single junction gallium arsenide solar cell epitaxial wafer is placed in a grinder to thin the substrate to a thickness of about 150 microns. And then polishing the substrate by using a Chemical Mechanical Polishing (CMP) mode, and controlling the thickness of the substrate to be about 100 microns.
2. Cleaning the polished single-junction gallium arsenide solar cell epitaxial wafer: wash in acetone for 3 min, put in isopropanol for 3 min, rinse with deionized water for 3 min, then put in HCl: h 2 O=1:1 (volume ratio) solution for 1 minute and then deionized water for 3 minutes to remove surface stains.
3. Depositing a P-type microcrystalline silicon carbide film layer on the front surface of an epitaxial wafer by using an aluminum-doped P-type microcrystalline silicon carbide target material through a magnetron sputtering technology to obtain a second silicon carbide contact layer, wherein the thickness is 5 micrometers, and the doping concentration range is 5 multiplied by 10 18 cm -3 ；
4. Depositing an N-type microcrystalline silicon carbide film layer on the back surface of an epitaxial wafer by using a nitrogen-doped N-type microcrystalline silicon carbide target material through a magnetron sputtering technology to obtain a first silicon carbide contact layer, wherein the thickness is 5 micrometers, and the doping concentration range is 1 multiplied by 10 19 cm -3 。
5. And depositing a front metal electrode and a back metal electrode on the second silicon carbide contact layer and the first silicon carbide contact layer by adopting electron beam evaporation or magnetron sputtering by utilizing a hard mask, wherein the metal electrodes are punctiform metals, so that the preparation of the double-sided single-junction gallium arsenide solar cell with the silicon carbide film layer is completed.
Example 2
The embodiment provides a method for preparing a double-sided gallium arsenide solar cell by selecting a two-junction gallium arsenide solar cell epitaxial wafer, and the specific structure is shown in the following table 2:
TABLE 2
The preparation method of the double-sided gallium arsenide solar cell comprises the following steps:
1. and (3) placing the two-junction gallium arsenide solar cell epitaxial wafer into a grinder to thin the substrate to a certain thickness of about 150 microns. Then using NH 4 OH:H 2 O 2 The solution of =1:8 (volume ratio) polishes the substrate, controlling the substrate thickness to around 100 microns according to its etch rate.
2. Cleaning the polished two-junction gallium arsenide solar cell epitaxial wafer: wash in acetone for 3 min, put in isopropanol for 3 min, rinse with deionized water for 3 min, then put in HCl: h 2 O=1:1 (volume ratio) solution for 1 minute and then deionized water for 3 minutes to remove surface stains.
3. Depositing a P-type microcrystalline silicon carbide film layer on the front surface of an epitaxial wafer by using an aluminum-doped P-type microcrystalline silicon carbide target material through a magnetron sputtering technology to obtain a second silicon carbide contact layer, wherein the thickness is 5 micrometers, and the doping concentration range is 5 multiplied by 10 18 cm -3 ；
4. Depositing an N-type microcrystalline silicon carbide film layer on the back surface of an epitaxial wafer by using a nitrogen-doped N-type microcrystalline silicon carbide target material through a magnetron sputtering technology to obtain a first silicon carbide contact layer, wherein the thickness is 5 micrometers, and the doping concentration range is 1 multiplied by 10 19 cm -3 。
5. And depositing a front metal electrode and a back metal electrode on the second silicon carbide contact layer and the first silicon carbide contact layer by adopting electron beam evaporation or magnetron sputtering by utilizing a hard mask, wherein the metal electrodes are punctiform metals, so that the preparation of the double-sided two-junction gallium arsenide solar cell with the silicon carbide film layer is completed.
Example 3
The embodiment provides a method for preparing a double-sided gallium arsenide solar cell by selecting a three-junction gallium arsenide solar cell epitaxial wafer, and the specific structure is shown in the following table 3:
TABLE 3 Table 3
The preparation method of the double-sided gallium arsenide solar cell comprises the following steps:
1. and (3) placing the three-junction gallium arsenide solar cell epitaxial wafer into a grinder to thin the Ge substrate to a certain thickness of about 150 microns. Then using NH 4 OH:H 2 O 2 The solution of =1:8 (volume ratio) polishes the substrate, controlling the substrate thickness to around 100 microns according to its etch rate.
2. Cleaning the polished three-junction gallium arsenide solar cell epitaxial wafer: wash in acetone for 3 min, put in isopropanol for 3 min, rinse with deionized water for 3 min, then put in HCl: h 2 O=1:1 (volume ratio) solution for 1 minute and then deionized water for 3 minutes to remove surface stains.
3. N-type microcrystalline silicon carbide film layer is deposited on the front surface of the epitaxial wafer by using a nitrogen-doped N-type microcrystalline silicon carbide target material through a magnetron sputtering technology, so that a second silicon carbide contact layer is obtained, the thickness is 5 micrometers, and the doping concentration range is 1 multiplied by 10 19 cm -3 ；
4. Depositing a P-type microcrystalline silicon carbide film layer on the back surface of an epitaxial wafer by using an aluminum-doped P-type microcrystalline silicon carbide target material through a magnetron sputtering technology to obtain a first silicon carbide contact layer, wherein the thickness is 5 micrometers, and the doping concentration range is 5 multiplied by 10 18 cm -3 。
5. And depositing a front metal electrode and a back metal electrode on the second silicon carbide contact layer and the first silicon carbide contact layer by adopting electron beam evaporation or magnetron sputtering by utilizing a hard mask, wherein the metal electrodes are punctiform metals, so that the preparation of the double-sided three-junction gallium arsenide solar cell with the silicon carbide film layer is completed.
Comparative example 1
The gallium arsenide solar cell in comparative example 1 is a single-sided cell, by first forming a layer of SiO on the front side of the cell epitaxial wafer shown in Table 1 2 /TiO 2 Then evaporating the metal front grid line electrode on the anti-reflection film, and finally evaporating the metal electrode on the whole back surface to obtain single-sided single-junction gallium arsenideA solar cell.
Comparative example 2
The gallium arsenide solar cell in comparative example 2 is a single-sided cell by first forming a layer of SiO on the front side of the cell epitaxial wafer shown in Table 2 2 /TiO 2 And then evaporating the metal front grid line electrode on the anti-reflection film, and finally evaporating the metal electrode on the whole back surface, thereby obtaining the single-sided double-junction gallium arsenide solar cell.
Comparative example 3
The gallium arsenide solar cell in comparative example 3 is a single-sided cell by first forming a layer of SiO on the front side of the cell epitaxial wafer shown in Table 3 2 /TiO 2 And then evaporating the metal front grid line electrode on the anti-reflection film, and finally evaporating the metal electrode on the whole back surface, thereby obtaining the single-sided three-junction gallium arsenide solar cell.
The solar cells of 1 square centimeter in the solar cells obtained in the above examples 1, 2, 3 and comparative examples 1, 2, 3 were selected and tested several times in a one-time solar simulator, and the test results were as follows:
from the test results, it can be seen that the double sided gallium arsenide solar cell of each example is comparable to its corresponding comparative example in Voc and FF index, and is higher in Isc, pm and off index than the cell of the comparative example.
According to the double-sided gallium arsenide solar cell provided by the embodiment of the utility model, the high-doped polycrystalline or microcrystalline silicon carbide is used as the cell contact layer, and the performances of wide band gap, high conductivity and high refractive index are used as the transparent conductive electrodes on two sides, so that light transmission on two sides is realized, the surface light transmission area is increased, the photoelectric conversion efficiency is improved, the electrode metal usage amount is reduced, and the cost is reduced.
In the description of the present utility model, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "left", "right", "front", "rear", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present utility model and simplifying the description, and do not indicate or imply that the devices or units referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present utility model.
In the description herein, the terms "one particular embodiment," "some embodiments," "one embodiment," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the utility model, and is not meant to limit the scope of the utility model, but to limit the utility model to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the utility model are intended to be included within the scope of the utility model.
Claims (5)
1. The double-sided gallium arsenide solar cell is characterized in that the double-sided gallium arsenide solar cell structure sequentially comprises a back metal electrode, a first silicon carbide contact layer, a gallium arsenide solar cell body, a second silicon carbide contact layer and a front metal electrode from bottom to top, wherein the first silicon carbide contact layer and the second silicon carbide contact layer are doped polycrystalline or microcrystalline silicon carbide.
2. The dual sided gallium arsenide solar cell of claim 1, wherein the first silicon carbide contact layer and the second silicon carbide contact layer each have a thickness of 1 micron to 30 microns.
3. The double sided gallium arsenide solar cell of claim 1, wherein the gallium arsenide solar cell body is single junction, double junction, triple junction or multi junction, and the gallium arsenide solar cell body structure comprises a substrate layer, a buffer layer, a cell layer, a window layer and a highly doped contact layer from bottom to top.
4. The dual sided gallium arsenide solar cell of claim 1, wherein the first silicon carbide contact layer is a P-type silicon carbide film, the second silicon carbide contact layer is an N-type silicon carbide film, or wherein the first silicon carbide contact layer is an N-type silicon carbide film, and the second silicon carbide contact layer is a P-type silicon carbide film.
5. The dual sided gallium arsenide solar cell of claim 4, wherein the doping element of the P-type silicon carbide film is aluminum or boron and the doping element of the N-type silicon carbide film is nitrogen.
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| CN117276360A (en) * | 2023-11-22 | 2023-12-22 | 长三角物理研究中心有限公司 | Novel crystalline silicon heterojunction solar cell structure and preparation method and application thereof |
| CN117276360B (en) * | 2023-11-22 | 2024-02-09 | 长三角物理研究中心有限公司 | Novel crystalline silicon heterojunction solar cell structure and preparation method and application thereof |
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