CN110634968A - Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact - Google Patents

Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact Download PDF

Info

Publication number
CN110634968A
CN110634968A CN201910883679.6A CN201910883679A CN110634968A CN 110634968 A CN110634968 A CN 110634968A CN 201910883679 A CN201910883679 A CN 201910883679A CN 110634968 A CN110634968 A CN 110634968A
Authority
CN
China
Prior art keywords
film
silver
monocrystalline silicon
silicon
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201910883679.6A
Other languages
Chinese (zh)
Inventor
杨柳
何赛灵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang University ZJU
Original Assignee
Zhejiang University ZJU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University ZJU filed Critical Zhejiang University ZJU
Priority to CN201910883679.6A priority Critical patent/CN110634968A/en
Publication of CN110634968A publication Critical patent/CN110634968A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022491—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of a thin transparent metal layer, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a monocrystalline silicon heterojunction solar cell based on a grid-line-free and non-doped contact structure, which sequentially comprises an antireflection film, an ultrathin metal film, a hole selective contact, monocrystalline silicon, an electron selective contact and a back electrode from top to bottom; the ultrathin metal film is a continuous film, and the thickness of the ultrathin metal film is less than 10 nm. The hole selective contact and the electron selective contact can be respectively two layers or one layer. The ultrathin metal film is introduced, so that the shielding effect of a grid electrode on sunlight in the traditional cell is avoided, the collection efficiency of photon-generated carriers is increased, the limiting effect on long-wave-band sunlight is enhanced, and the short-circuit current of the cell can be greatly improved; the metal film can also improve the stability of the battery and increase the flexibility of the battery; the whole battery has the advantages of simple structure, flexible design, simple process, no need of additional doping process, no need of defining electrode pattern structure, controllable process temperature within 100 ℃ and low cost.

Description

Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact
Technical Field
The invention relates to the technical field of solar photovoltaics, in particular to a monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact.
Background
The monocrystalline silicon solar cell occupies the most major photovoltaic market in the world and is an important photovoltaic technical scheme. The traditional monocrystalline silicon photovoltaic technology is represented by two solar cells of a homojunction and a heterojunction, wherein the homojunction and the heterojunction adopt p + type hole selective contact and n + type electron selective contact formed by diffusion doping; the latter uses intrinsic amorphous silicon as passivation layer, and p + type and n + type heavily doped amorphous silicon as hole and electron selective contact respectively. These doped contact techniques have several disadvantages: from the physical aspect, the heavy doping inevitably causes unfavorable factors such as Auger recombination, forbidden band narrowing, body/surface recombination, free carrier absorption and the like, and greatly limits the open-circuit voltage and the short-circuit current of the battery; in technical terms, doping often requires high-temperature diffusion and annealing processes, and also requires toxic gases (borane and phosphine) to grow p + type and n + type amorphous silicon, so that the process is complex and high in cost. To overcome the above problems, the use of undoped carrier-selective contacts instead of doped contacts has become an emerging development in the field of single crystal silicon photovoltaic technology (Energy & Environmental Science 9, 1552-1576 (2016)).
At this stage, single crystal silicon heterojunction solar cells have been constructed primarily for which the electron (or hole) selective contact is undoped and the hole (or electron) selective contact is doped, for the exploration of a variety of different electron and hole selective materials. Reports on single crystal silicon heterojunction solar cells in which both electron and hole selective contacts are undoped are not uncommon.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a monocrystalline silicon heterojunction solar cell based on no grid line and no doped contact, simplifies the cell preparation process, reduces the cell cost, improves the photoelectric conversion efficiency of the cell, and can expand the application range of the solar cell to the field of flexible optoelectronic devices.
A monocrystalline silicon heterojunction solar cell based on no grid line and no doped contact sequentially comprises an antireflection film, an ultrathin metal film, a hole selective contact, monocrystalline silicon, an electron selective contact and a back electrode from top to bottom; the ultrathin metal film is a continuous film, and the thickness of the ultrathin metal film is less than 10 nm.
The forbidden band width of the antireflection film is larger than 3 eV, and the thickness of the antireflection film is smaller than 100 nm.
The ultrathin metal film is a silver, gold, copper and aluminum single-layer film; or the double-layer film is aluminum/silver, gold/silver, calcium/silver, germanium/silver, chromium/silver, nickel/silver, copper/silver, titanium/silver, aluminum/gold, nickel/gold and titanium/gold, the thickness ratio is 1:1-1:20, and the total thickness of the double-layer film is less than 10 nm; or an alloy film formed by mixing aluminum/silver, gold/silver, calcium/silver, germanium/silver, chromium/silver, nickel/silver, copper/silver, titanium/silver, aluminum/gold, nickel/gold and titanium/gold according to a certain proportion, wherein the mixing proportion is 1:1-1:20, and the total thickness of the alloy film is less than 10 nm.
The hole selective contact is two layers, namely a hole selective film and a first passivation film, and the first passivation film is in contact with the monocrystalline silicon; or a layer, namely a hole selective film with a passivation function, and is in contact with the monocrystalline silicon.
The monocrystalline silicon is doped in an n type mode, the resistivity is less than 10 omega cm, the thickness is less than 400 mu m, and the surface is smooth or is provided with a suede light trapping structure.
The electron selective contact is two layers, namely an electron selective film and a second passivation film, and the second passivation film is in contact with the monocrystalline silicon; or an electron selective film with passivation function, and is contacted with the monocrystalline silicon.
The back electrode is a silver and aluminum single-layer film, and the thickness of the back electrode is more than 20 nm; or calcium/silver, magnesium/silver, calcium/aluminum and magnesium/aluminum double-layer films with the thickness ratio of 1:1-1:50, and the total thickness of the double-layer films is more than 20 nm.
The work function of the hole selective contact film is higher than that of the monocrystalline silicon, the forbidden band width is larger than 3 eV, and extra doping is not needed; the first passivation film is one or a combination of silicon oxide, aluminum oxide, titanium oxide, hafnium oxide, silicon nitride, silicon oxynitride, nitrogen oxide, intrinsic hydrogenated amorphous silicon and silicon carbide, and the thickness of the first passivation film is less than 10 nm.
The work function of the electron selective contact film is lower than that of the monocrystalline silicon, the forbidden band width is larger than 3 eV, and extra doping is not needed; the second passivation film is one or a combination of more of silicon oxide, aluminum oxide, titanium oxide, hafnium oxide, silicon nitride, silicon oxynitride, nitrogen oxide, intrinsic hydrogenated amorphous silicon and silicon carbide, and the thickness of the second passivation film is less than 10 nm.
The monocrystalline silicon heterojunction solar cell is applied, the thickness of the monocrystalline silicon is smaller than 100 mu m, and the application of the monocrystalline silicon heterojunction solar cell comprises the field of flexible photoelectron.
The invention has the beneficial effects that:
compared with other monocrystalline silicon solar cells, the solar cell disclosed by the invention introduces the ultrathin metal film as the top electrode, replaces the grid line electrode, ITO and other brittle transparent conductive oxides in the traditional solar cell, overcomes the shielding effect of the grid line electrode on sunlight, and is expected to expand the application range of the monocrystalline silicon solar cell to the field of flexible photoelectrons. Theoretically, a metal film with a thickness less than 10 nm would have good optical transmittance. In practice, however, metal thin films are often produced by physical vapor deposition methods. Due to the difference of surface tension between the substrate and the metal, the metal with the thickness less than 10 nm is difficult to form a film continuously, so that the metal film has large absorption of incident light and low conductivity. Therefore, in many reported monocrystalline silicon solar cells, no ultrathin metal thin film is introduced to collect and conduct photogenerated carriers. The invention creatively provides an ultrathin metal film as a top electrode of a monocrystalline silicon solar cell, uses hole selective contact as a substrate, and combines a single-layer metal, a double-layer metal or a metal alloy film to overcome the surface tension difference between the metal and the substrate, thereby generating the ultrathin metal continuous film with the thickness of less than 10 nm. The film has good optical transmittance and electrical conductivity, and the optical transmittance can be further improved by the action of the top antireflection film. Compared with a grid line electrode, the ultrathin metal film completely covers the hole selective contact, so that sunlight is not shielded, and the collection efficiency of photo-generated carriers is high; meanwhile, the reflectivity of the solar cell is high, after long-wave-band sunlight penetrates through the ultrathin metal film, the sunlight can be tightly bound in monocrystalline silicon between the film and the back electrode under the Fabry-Perot effect and is fully absorbed to generate photon-generated carriers, and the thinner the monocrystalline silicon is, the more remarkable the light trapping effect is. In summary, the introduction of the ultra-thin metal film can greatly improve the short-circuit current of the battery. In addition, the ultrathin metal film can protect the hole selective contact film from being polluted by carbon, water, oxygen and the like, and the stability of the battery is improved. In addition, the ultrathin metal film has excellent flexibility, is applied to a monocrystalline silicon battery with the thickness of less than 100 mu m, and can expand the application field of the monocrystalline silicon solar battery to the field of flexible photoelectrons.
The invention has simple structure design and is composed of a plurality of layers of functional films; the structural design can be flexibly adjusted, for example, if the hole selective contact film has a passivation effect, the first passivation film can be removed; if the electron selective contact film has a passivation effect, the second passivation film of the present invention can be removed.
The preparation process is very simple, only multilayer functional films are required to be sequentially deposited on the front side and the back side of the monocrystalline silicon piece, an additional doping process is not required, an electrode pattern structure is not required to be defined, the process temperature can be controlled within 100 ℃, and the cost is low.
Drawings
Figure 1 is a single crystal silicon heterojunction solar cell based on a gridless, undoped contact as shown in example 1;
figure 2 is a single crystal silicon heterojunction solar cell based on a gridless, undoped contact as shown in example 2;
in the figure, an antireflection film 1, an ultrathin metal film 2, a hole selective contact 3, single crystal silicon 4, an electron selective contact 5, a back electrode 6, a hole selective film 7, a first passivation film 8, a second passivation film 9, and an electron selective film 10.
Detailed Description
The invention is further illustrated with reference to the figures and examples.
A monocrystalline silicon heterojunction solar cell based on no grid line and no doped contact sequentially comprises an antireflection film 1, an ultrathin metal film 2, a hole selective contact 3, monocrystalline silicon 4, an electron selective contact 5 and a back electrode 6 from top to bottom; the ultrathin metal film 2 is a continuous film, and the thickness is less than 10 nm.
The forbidden band width of the antireflection film 1 is more than 3 eV, and the thickness of the antireflection film is less than 100 nm.
The ultrathin metal film 2 is a silver, gold, copper and aluminum single-layer film; or the double-layer film is aluminum/silver, gold/silver, calcium/silver, germanium/silver, chromium/silver, nickel/silver, copper/silver, titanium/silver, aluminum/gold, nickel/gold and titanium/gold, the thickness ratio is 1:1-1:20, and the total thickness of the double-layer film is less than 10 nm; or an alloy film formed by mixing aluminum/silver, gold/silver, calcium/silver, germanium/silver, chromium/silver, nickel/silver, copper/silver, titanium/silver, aluminum/gold, nickel/gold and titanium/gold according to a certain proportion, wherein the mixing proportion is 1:1-1:20, and the total thickness of the alloy film is less than 10 nm.
The hole selective contact 3 is formed by two layers, namely a hole selective film 7 and a first passivation film 8, and the first passivation film 8 is in contact with the monocrystalline silicon 4; or a layer, namely a hole selective film with passivation function, and is in contact with the monocrystalline silicon 4.
The monocrystalline silicon 4 is doped in an n-type mode, the resistivity is less than 10 omega-cm, the thickness is less than 400 mu m, and the surface is smooth or is provided with a suede light trapping structure.
The electron selective contact 5 is two layers, namely an electron selective film 9 and a second passivation film 10, and the second passivation film 10 is in contact with the monocrystalline silicon 4; or an electron selective film having a passivation function and being in contact with the single crystal silicon 4.
The back electrode 8 is a silver and aluminum single-layer film, and the thickness is more than 20 nm; or calcium/silver, magnesium/silver, calcium/aluminum and magnesium/aluminum double-layer films with the thickness ratio of 1:1-1:50, and the total thickness of the double-layer films is more than 20 nm.
The work function of the hole selective contact film 7 is higher than that of the monocrystalline silicon 4, the forbidden band width is larger than 3 eV, and extra doping is not needed; the first passivation film 8 is one or a combination of silicon oxide, aluminum oxide, titanium oxide, hafnium oxide, silicon nitride, silicon oxynitride, nitrogen oxide, intrinsic hydrogenated amorphous silicon and silicon carbide, and the thickness of the first passivation film is less than 10 nm.
The work function of the electron selective contact film 9 is lower than that of the monocrystalline silicon 4, the forbidden band width is larger than 3 eV, and extra doping is not needed; the second passivation film 9 is one or a combination of silicon oxide, aluminum oxide, titanium oxide, hafnium oxide, silicon nitride, silicon oxynitride, nitrogen oxide, intrinsic hydrogenated amorphous silicon and silicon carbide, and the thickness is less than 10 nm.
The thickness of the monocrystalline silicon 4 is less than 100 mu m, and the application of the monocrystalline silicon heterojunction solar cell comprises the field of flexible photoelectron.
Example 1
Setting the antireflection film 1 as molybdenum oxide with the thickness of 50 nm; the ultrathin metal film 2 is an alloy film formed by mixing aluminum/silver in a ratio of 1:10, and the thickness is 5 nm; the hole-selective contact 3 comprises a hole-selective film 7 and a first passivation film 8 of molybdenum oxide 10 nm thick and silicon oxide 1 nm thick, respectively; the thickness of the single crystal silicon 4 is 10 μm; the electron selective contact 5 comprises a second passivation film 9 and an electron selective film 10, which are respectively 1 nm thick silicon oxide and 1 nm thick lithium fluoride; the back electrode 6 is aluminum and has a thickness of 100 nm.
On the basis of cleaning the monocrystalline silicon 4, depositing silicon oxide as a first passivation film 8 and a second passivation film 9 by utilizing an atomic layer deposition method, and then sequentially depositing lithium fluoride and aluminum on one surface of the monocrystalline silicon 4 by utilizing a thermal evaporation method to respectively serve as an electron selective film 10 and a back electrode 6; finally, molybdenum oxide, an aluminum-doped silver alloy film and molybdenum oxide are sequentially deposited on the other surface of the monocrystalline silicon 4 by using a thermal evaporation method to respectively serve as the hole selective film 7, the ultrathin metal film 2 and the antireflection film 1. Wherein, the aluminum/silver alloy film can be prepared by adopting a co-evaporation method. Because doping and electrode pattern structure definition are not needed, the whole process is very simple, the times of thermal evaporation and vacuum pumping are only needed twice, the process flow is greatly simplified, and the process time is saved. The thickness of the monocrystalline silicon 4 is 10 μm, and the application of the ultra-thin metal film 2, the battery will have very good flexibility.
Example 2
Setting the antireflection film 1 as molybdenum oxide with the thickness of 50 nm; the ultrathin metal film 2 is an aluminum/silver double-layer film with the thickness ratio of 1:5 and the thickness of 6 nm; the hole selective contact 3 is chromium oxide with a thickness of 20 nm; the thickness of the monocrystalline silicon 4 is 50 mu m, and pyramid textured light trapping structures are arranged on the upper surface and the lower surface of the monocrystalline silicon 4; the electron selective contact 5 is titanium oxide with the thickness of 1 nm; the back electrode 8 is a calcium/aluminum double-layer film with a thickness ratio of 1:20 and a thickness of 100 nm.
By selecting different materials and setting different film thickness parameters, the monocrystalline silicon heterojunction solar cell based on the non-grid line and non-doped contact can be flexibly designed, and the cell can be prepared by adopting a plurality of different film deposition methods, including but not limited to thermal evaporation, chemical vapor deposition, electron beam evaporation, sputtering, atomic layer deposition and thermal oxidation.

Claims (10)

1. A monocrystalline silicon heterojunction solar cell based on no grid line and no doped contact is characterized by comprising an antireflection film (1), an ultrathin metal film (2), a hole selective contact (3), monocrystalline silicon (4), an electron selective contact (5) and a back electrode (6) from top to bottom in sequence; the ultrathin metal film (2) is a continuous film, and the thickness is less than 10 nm.
2. The monocrystalline silicon heterojunction solar cell according to claim 1, wherein said antireflection film (1) has a forbidden bandwidth greater than 3 eV and a thickness less than 100 nm.
3. The monocrystalline silicon heterojunction solar cell according to claim 1, wherein said ultra-thin metal thin film (2) is a single-layer thin film of silver, gold, copper, aluminum; or the double-layer film is aluminum/silver, gold/silver, calcium/silver, germanium/silver, chromium/silver, nickel/silver, copper/silver, titanium/silver, aluminum/gold, nickel/gold and titanium/gold, the thickness ratio is 1:1-1:20, and the total thickness of the double-layer film is less than 10 nm; or an alloy film formed by mixing aluminum/silver, gold/silver, calcium/silver, germanium/silver, chromium/silver, nickel/silver, copper/silver, titanium/silver, aluminum/gold, nickel/gold and titanium/gold according to a certain proportion, wherein the mixing proportion is 1:1-1:20, and the total thickness of the alloy film is less than 10 nm.
4. The monocrystalline silicon heterojunction solar cell according to claim 1, characterized in that said hole-selective contact (3) is two layers, respectively a hole-selective thin film (7) and a first passivation thin film (8), and the first passivation thin film (8) is in contact with said monocrystalline silicon (4); or a layer, namely a hole selective film with passivation function, and is in contact with the monocrystalline silicon (4).
5. The monocrystalline silicon heterojunction solar cell of claim 1, wherein the monocrystalline silicon (4) is n-doped, has a resistivity of less than 10 Ω · cm, a thickness of less than 400 μm, and has a smooth surface or textured light trapping structure.
6. The monocrystalline silicon heterojunction solar cell according to claim 1, characterized in that said electron selective contact (5) is two layers, respectively an electron selective thin film (9) and a second passivation thin film (10), and the second passivation thin film (10) is in contact with said monocrystalline silicon (4); or an electron selective film with passivation function, and is contacted with the monocrystalline silicon (4).
7. The monocrystalline silicon heterojunction solar cell of claim 1, wherein said back electrode (8) is a silver, aluminum single-layer thin film with a thickness greater than 20 nm; or calcium/silver, magnesium/silver, calcium/aluminum and magnesium/aluminum double-layer films with the thickness ratio of 1:1-1:50, and the total thickness of the double-layer films is more than 20 nm.
8. The monocrystalline silicon heterojunction solar cell according to claim 4, wherein the work function of the hole-selective contact film (7) is higher than that of the monocrystalline silicon (4), the forbidden band width is greater than 3 eV, and no additional doping is required; the first passivation film (8) is one or a combination of silicon oxide, aluminum oxide, titanium oxide, hafnium oxide, silicon nitride, silicon oxynitride, intrinsic hydrogenated amorphous silicon and silicon carbide, and the thickness of the first passivation film is less than 10 nm.
9. The single-crystal silicon heterojunction solar cell according to claim 6, wherein the work function of the electron selective contact film (9) is lower than that of the single-crystal silicon (4), the forbidden band width is greater than 3 eV, and no additional doping is required; the second passivation film (9) is one or a combination of silicon oxide, aluminum oxide, titanium oxide, hafnium oxide, silicon nitride, silicon oxynitride, intrinsic hydrogenated amorphous silicon and silicon carbide, and the thickness of the second passivation film is less than 10 nm.
10. Use of a single crystal silicon heterojunction solar cell according to any of claims 1 to 9, characterized in that said single crystal silicon (4) is less than 100 μm thick, said single crystal silicon heterojunction solar cell use comprising the field of flexible optoelectronics.
CN201910883679.6A 2019-09-18 2019-09-18 Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact Withdrawn CN110634968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910883679.6A CN110634968A (en) 2019-09-18 2019-09-18 Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910883679.6A CN110634968A (en) 2019-09-18 2019-09-18 Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact

Publications (1)

Publication Number Publication Date
CN110634968A true CN110634968A (en) 2019-12-31

Family

ID=68971584

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910883679.6A Withdrawn CN110634968A (en) 2019-09-18 2019-09-18 Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact

Country Status (1)

Country Link
CN (1) CN110634968A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112151625A (en) * 2020-09-04 2020-12-29 泰州隆基乐叶光伏科技有限公司 Solar cell, production method and cell module
CN112151626A (en) * 2020-09-15 2020-12-29 泰州隆基乐叶光伏科技有限公司 Solar cell, production method and photovoltaic module
WO2022134994A1 (en) * 2020-12-25 2022-06-30 泰州隆基乐叶光伏科技有限公司 Solar cell, production method, and photovoltaic module
CN115000191A (en) * 2022-06-05 2022-09-02 北京工业大学 Novel silicon oxide composite passivation layer compound heterojunction contact silicon solar cell

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253165A (en) * 2013-06-27 2014-12-31 海洋王照明科技股份有限公司 Solar cell device and method for manufacturing same
CN104979037A (en) * 2015-05-14 2015-10-14 上海电力学院 Transparent conducting thin film with enhanced thermal stability and preparation method and application thereof
CN104992988A (en) * 2015-06-24 2015-10-21 中山大学 Crystalline silicon solar cell surface passivation layer having good conductive performance and passivation method
CN106024978A (en) * 2016-06-16 2016-10-12 华东师范大学 Transparent conductive thin film with metal alloy sandwich structure with anti-ultraviolet function
CN110085683A (en) * 2019-04-04 2019-08-02 浙江师范大学 Silicon/crystalline silicon heterogenous joint solar cell of non-impurity-doped and preparation method thereof
CN211350668U (en) * 2019-09-18 2020-08-25 浙江大学 Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253165A (en) * 2013-06-27 2014-12-31 海洋王照明科技股份有限公司 Solar cell device and method for manufacturing same
CN104979037A (en) * 2015-05-14 2015-10-14 上海电力学院 Transparent conducting thin film with enhanced thermal stability and preparation method and application thereof
CN104992988A (en) * 2015-06-24 2015-10-21 中山大学 Crystalline silicon solar cell surface passivation layer having good conductive performance and passivation method
CN106024978A (en) * 2016-06-16 2016-10-12 华东师范大学 Transparent conductive thin film with metal alloy sandwich structure with anti-ultraviolet function
CN110085683A (en) * 2019-04-04 2019-08-02 浙江师范大学 Silicon/crystalline silicon heterogenous joint solar cell of non-impurity-doped and preparation method thereof
CN211350668U (en) * 2019-09-18 2020-08-25 浙江大学 Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112151625A (en) * 2020-09-04 2020-12-29 泰州隆基乐叶光伏科技有限公司 Solar cell, production method and cell module
CN112151626A (en) * 2020-09-15 2020-12-29 泰州隆基乐叶光伏科技有限公司 Solar cell, production method and photovoltaic module
CN115148838A (en) * 2020-09-15 2022-10-04 泰州隆基乐叶光伏科技有限公司 Solar cell, production method and photovoltaic module
CN115148838B (en) * 2020-09-15 2023-07-18 泰州隆基乐叶光伏科技有限公司 Solar cell, production method and photovoltaic module
WO2022134994A1 (en) * 2020-12-25 2022-06-30 泰州隆基乐叶光伏科技有限公司 Solar cell, production method, and photovoltaic module
CN115000191A (en) * 2022-06-05 2022-09-02 北京工业大学 Novel silicon oxide composite passivation layer compound heterojunction contact silicon solar cell

Similar Documents

Publication Publication Date Title
KR101219926B1 (en) Heterocontact solar cell with inverted geometry of its layer structure
CN110634968A (en) Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact
US10084107B2 (en) Transparent conducting oxide for photovoltaic devices
EP2095429B1 (en) Solar cell and method for manufacturing the same
JP5762552B2 (en) Photoelectric conversion device and manufacturing method thereof
CN113257940B (en) Laminated photovoltaic device and production method
CN211350668U (en) Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact
US20090314337A1 (en) Photovoltaic devices
WO2016069758A1 (en) Tandem photovoltaic device
JP2014072530A (en) Solar cell and method of manufacturing the same
KR101886818B1 (en) Method for manufacturing of heterojunction silicon solar cell
KR101597532B1 (en) The Manufacturing Method of Back Contact Solar Cells
CN114678430B (en) Electron selective passivation contact structure, solar cell and preparation method
CN111384187A (en) Composite back electrode, preparation method thereof and laminated solar cell
CN214176064U (en) Double-sided incident laminated solar cell
WO2012057604A1 (en) Nanostructure-based photovoltaic cell
RU2757544C1 (en) Silicon-based double-sided heterojunction photovoltaic converter
KR20200061479A (en) Silicon solar cell including a carrier seletive thin layer and method of manufacturing the same
KR101210110B1 (en) Solar cell and method of fabricating the same
KR20090076638A (en) Thin-film type solar cell and manufacturing method thereof
US20110155229A1 (en) Solar cell and method for manufacturing the same
JP4412766B2 (en) Thin film polycrystalline Si solar cell
KR20130061346A (en) Solar cell and method of manufacturing the same
CN219476692U (en) Gallium arsenide solar cell with silicon carbide contact layer
CN114744063B (en) Solar cell, production method and photovoltaic module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication

Application publication date: 20191231