CN115000191A - Novel silicon oxide composite passivation layer compound heterojunction contact silicon solar cell - Google Patents
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- CN115000191A CN115000191A CN202210631894.9A CN202210631894A CN115000191A CN 115000191 A CN115000191 A CN 115000191A CN 202210631894 A CN202210631894 A CN 202210631894A CN 115000191 A CN115000191 A CN 115000191A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 238000002161 passivation Methods 0.000 title claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 35
- 239000010703 silicon Substances 0.000 title claims abstract description 35
- 150000001875 compounds Chemical class 0.000 title claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 17
- 239000002131 composite material Substances 0.000 title claims abstract description 16
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000010409 thin film Substances 0.000 claims abstract description 54
- 239000010408 film Substances 0.000 claims abstract description 50
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 44
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 14
- 230000005525 hole transport Effects 0.000 claims abstract description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000004408 titanium dioxide Substances 0.000 claims description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 claims description 8
- 150000003377 silicon compounds Chemical class 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 6
- 238000013083 solar photovoltaic technology Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 72
- 238000004088 simulation Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021488 crystalline silicon dioxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Abstract
A novel silicon oxide composite passivation layer compound heterojunction contact silicon solar cell belongs to the field of solar photovoltaic technology research. An intrinsic hydrogenated amorphous silicon passivation film is deposited on the front surface of a silicon wafer by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method to passivate dangling bonds on the surface of crystalline silicon, and in order to avoid direct contact between the hydrogenated amorphous silicon on the front surface and a molybdenum trioxide thin film deposited on the hydrogenated amorphous silicon passivation film, a silicon dioxide protection layer is deposited on the front surface of the hydrogenated amorphous silicon passivation film. Since hydrogenated amorphous silicon is directly contacted with molybdenum trioxide, a sparse silicon dioxide film is generated at the contact interface of the hydrogenated amorphous silicon, the molybdenum trioxide can be disabled, and the passivation effect of the hydrogenated amorphous silicon is reduced, so that the effect of the molybdenum trioxide as a hole transport layer and the effect of the hydrogenated amorphous silicon as passivation are protected, and the passivation effect is further improved. And the efficiency and the stability of the silicon solar cell are further improved.
Description
Technical Field
The invention relates to the technical field of solar photovoltaics, in particular to a silicon compound heterojunction solar cell based on a crystalline silicon substrate.
Background
Based on the advantages of high power generation efficiency, novelty, high reliability, low cost and the like, the crystalline silicon solar cell always occupies more than 94% of the market of photovoltaic products. Silicon compound heterojunction contact Solar Cells (SCHs) have received a high degree of research interest from researchers in the industry and academia due to their advantages of wide band gap, doping-free, low non-heterojunction, low process temperature, excellent temperature characteristics and light stability, and capability of double-sided power generation.
The solar cell performance parameters are evaluated by short-circuit current, open-circuit voltage and fill factor. However, although the photoelectric conversion efficiency of the current compound solar cell is 23.5%, there are some problems due to the structural restriction of the compound solar cell. The existing comparison analysis of a large amount of data shows that the problem of diffusion of hydrogen and oxygen elements exists in the structure of the cell using hydrogenated amorphous silicon as a passivation layer and molybdenum trioxide as a hole transport layer in the existing compound silicon-based solar cell, so that the solar cell adopting the novel silicon oxide composite passivation layer structure is adopted.
In order to fully utilize the advantages of a silicon-based compound heterojunction solar cell and solve the problems, the invention adopts a novel silicon oxide composite passivation layer compound heterojunction contact silicon solar cell and a preparation method, can solve the problems of element diffusion and cell stability, and can stabilize the cell by adopting the structure.
Disclosure of Invention
In order to reduce the problems of parasitic absorption of the solar cell and protect the performance stability of the solar cell and obtain higher short-circuit current, a silicon dioxide passivation protective layer is added to a hydrogenated amorphous silicon layer and a molybdenum trioxide layer, and finally the high efficiency and stability of the solar cell are realized.
A novel silicon oxide composite passivation layer compound heterojunction contact silicon solar cell has a basic structure that a first hydrogenated amorphous silicon thin film layer (2), a first silicon dioxide thin film layer (3), a molybdenum trioxide thin film layer (4), a first transparent conductive oxide thin film layer (5) and a front metal electrode (6) are sequentially arranged on the front surface, namely the upper surface, of a monocrystalline silicon (1), a second hydrogenated amorphous silicon thin film layer (7), a second silicon dioxide thin film layer (8), a titanium dioxide thin film layer (9), a second transparent conductive oxide thin film layer (10) and a back metal electrode (11) are sequentially arranged on the front surface, namely the lower surface, of the monocrystalline silicon (1), the first hydrogenated amorphous silicon thin film layer (2) and the second hydrogenated amorphous silicon thin film layer (7) are passivation layers, the first silicon dioxide thin film layer (3) and the second silicon dioxide thin film layer (8) are passivation protection layers, and the molybdenum trioxide thin film layer (4) is a hole transmission layer, the titanium dioxide film layer (9) is an electron transmission layer,
the silicon chip comprises monocrystalline silicon (1), namely an n-type silicon chip, a passivation layer is formed by hydrogenated amorphous silicon on the front surface and the back surface, a p-n junction is formed by a molybdenum trioxide thin film layer and a titanium dioxide thin film layer, and the molybdenum trioxide thin film layer is used as a hole selective transport layer; the titanium dioxide film layer is used as an electron transport layer.
The silicon compound heterojunction contact solar cell is formed by connecting a plurality of basic units in series or/and in parallel, and the corresponding front metal electrode (6) and the back metal electrode (11) are connected in series or/and in parallel.
Taking a silicon compound heterojunction contact solar cell of an n-type substrate (equivalent to (1) of fig. 1) as an example, a front surface hydrogenated amorphous silicon passivation film (equivalent to (2) of fig. 1) of crystalline silicon and silicon dioxide are passivation protective films, and a molybdenum trioxide film is a hole selective transport layer. On the back of the silicon chip, a hydrogenated amorphous silicon passivation film (corresponding to (4) of fig. 1) and silicon dioxide are deposited to be a passivation protective film, and a titanium dioxide film is used as an electron selective transmission layer. The transparent conductive oxide film on the front surface is deposited on the upper part of the molybdenum trioxide film, and a metal electrode is arranged on the upper part of the transparent conductive oxide film to form close ohmic contact. The transparent conductive oxide film on the back is deposited on the titanium dioxide film, and a metal electrode is arranged on the transparent conductive oxide film to form close ohmic contact. Constituting the structure of the entire battery.
The silicon wafer of the monocrystalline silicon (1) of the substrate is n-type, and the thickness is generally between 131 and 275 mu m;
ultrasonically cleaning an n-type silicon wafer by using deionized water, absolute ethyl alcohol and acetone to obtain a clean silicon wafer;
the first hydrogenated amorphous silicon thin film layer (2) and the second hydrogenated amorphous silicon thin film layer (7) are 10nm thick and are deposited by a chemical vapor deposition method;
the first silicon dioxide film layer (3) and the second silicon dioxide film layer (8) are 5nm thick and are deposited by a chemical vapor deposition method;
the front surface molybdenum trioxide thin film layer (3) and the back surface titanium dioxide thin film layer (8) are deposited by a thermal evaporation method, and the thickness of the front surface molybdenum trioxide thin film layer and the back surface titanium dioxide thin film layer is 10 nm;
the first transparent conductive oxide film layer (5) and the second transparent conductive oxide film layer (10) are both Indium Tin Oxide (ITO) films, the thickness is 200nm, and the indium tin oxide films are deposited by a radio frequency magnetron sputtering method;
the front metal electrode (6) and the back metal electrode layer (11) are made of silver materials and adopt a thermal evaporation method. The thickness was 200 nm.
An intrinsic hydrogenated amorphous silicon passivation film is deposited on the front surface of a silicon wafer by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method to passivate dangling bonds on the surface of crystalline silicon, and a silicon dioxide protective layer is deposited on the front surface of the hydrogenated amorphous silicon passivation film in order to avoid direct contact between the hydrogenated amorphous silicon on the front surface and a molybdenum trioxide thin film deposited on the hydrogenated amorphous silicon passivation film. Because hydrogenated amorphous silicon is directly contacted with molybdenum trioxide, a sparse silicon dioxide film is generated at the contact interface of the hydrogenated amorphous silicon, the molybdenum trioxide can be disabled, and the passivation effect of the hydrogenated amorphous silicon is reduced, so that the effect of the molybdenum trioxide as a hole transport layer and the effect of the hydrogenated amorphous silicon as passivation are protected, and the passivation effect is further improved. And the efficiency and the stability of the silicon solar cell are further improved.
The purpose of the present invention is to solve the problem of element diffusion in hydrogenated amorphous silicon and molybdenum trioxide layers in batteries and to solve the resulting problem by using a novel silicon oxide composite passivation layer structure.
Drawings
Fig. 1 is a cross-sectional view of a solar cell basic unit: wherein,
(1) is an n-type silicon wafer;
(2) the first hydrogenated amorphous silicon thin film layer covers the whole front surface of the silicon wafer;
(3) the first silicon dioxide film layer covers the whole upper surface of the hydrogenated amorphous silicon passivation layer in an area corresponding to the whole upper surface of the hydrogenated amorphous silicon passivation layer;
(4) the molybdenum trioxide thin film layer and the hole transport layer cover the area corresponding to the upper surface of the whole silicon dioxide passivation protective layer;
(5) a first transparent conductive oxide thin film layer covering the entire upper surface molybdenum trioxide thin film layer;
(6) the transparent conductive oxide film layer is a front metal electrode and a metal thin wire and covers the whole upper surface.
(7) The second hydrogenated amorphous silicon thin film layer covers the whole back surface of the silicon wafer;
(8) the second silicon dioxide film layer covers the whole hydrogenated amorphous silicon passivation layer back surface in an area corresponding to the whole hydrogenated amorphous silicon passivation layer back surface;
(9) the area covered by the titanium dioxide film layer corresponds to the whole back surface of the silicon dioxide passivation protective layer;
(10) the second transparent conductive oxide film layer covers the whole back surface titanium dioxide film layer;
(11) the back metal electrode covers the whole upper surface of the transparent conductive oxide film layer.
Figure 2 is a schematic view of the upper surface of a solar cell,
figure 3 is a schematic view of the upper surface of another solar cell,
(12) is an anti-reflection layer;
(13) a front surface field layer;
(14) the metal wires are designed with various forms for connecting the transparent conductive oxide films.
FIG. 4 is a schematic view of a region-selective deposited film,
(15) is a shadow mask (or reticle).
FIG. 5 is a schematic diagram of a typical crystalline silicon compound heterojunction contact solar cell;
fig. 6 is a schematic view of a silicon compound heterojunction contact solar cell according to an embodiment of the present invention (wherein the corresponding portions in fig. 1 are not shown in the figure).
Fig. 7 is a performance diagram of simulation results of a solar cell.
Fig. 8 is a graph of simulation results of stability of the solar cell.
Detailed Description
The invention solves the problem of element diffusion in compound batteries. The embodiment of the invention is that a silicon oxide layer is added between a hydrogenated amorphous silicon layer and a molybdenum trioxide layer, and the preparation process of the novel silicon oxide composite passivation layer compound heterojunction contact silicon solar cell comprises the following steps:
(1) carrying out deionized water, absolute ethyl alcohol and acetone on an n-type silicon wafer, and carrying out ultrasonic cleaning on the silicon wafer to obtain a clean silicon wafer;
(2) depositing hydrogenated amorphous silicon films on the front side and the back side of the n-type crystalline silicon substrate respectively by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method and taking SiH4 and H2 as reaction gases;
(3) and depositing silicon dioxide films on the front surface hydrogenated amorphous silicon film and the back surface hydrogenated amorphous silicon film respectively by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method and taking SiH4 and N2O as reaction gases.
(4) And respectively depositing a molybdenum trioxide film and a titanium dioxide film on the front and back SiO2 films by a thermal evaporation method.
(5) Depositing a transparent conductive film Indium Tin Oxide (ITO) on the front and back molybdenum trioxide films and the titanium dioxide film by a radio frequency magnetron sputtering method;
(6) and (3) evaporating metal electrodes on the front and back ITO films by a shadow mask or a mask respectively by adopting a thermal evaporation method.
Examples
In order to show the effect of the invention, the present embodiment shows the parameters and results of simulation performed by the simulation tool silverco ATLAS, and the simulation is performed by using AM1.5 standard sunlight.
Comparative example structure:
the comparative example is a conventional compound solar cell, and the solar cell model width is set to 999 μm, see fig. 5.
The invention is a local front surface field silicon compound heterojunction contact solar cell, the model structure is shown in figure 6 (thickness dimension is marked on the figure), and the width of the solar cell model is 999 μm.
| Battery with a battery cell | Open circuit voltage (v) | Short-circuit current (A) | Filling factor (%) | Efficiency of |
| Examples of the invention | 0.742 | 3.3E-7 | 84.3 | 12.85％ |
| Comparative example | 0.739 | 3.0E-7 | 83.4 | 10.84％ |
。
Claims (8)
1. A silicon oxide composite passivation layer compound heterojunction contact silicon solar cell is characterized in that a basic structure is that a first hydrogenated amorphous silicon thin film layer (2), a first silicon dioxide thin film layer (3), a molybdenum trioxide thin film layer (4), a first transparent conductive oxide thin film layer (5) and a front metal electrode (6) are sequentially arranged on the front surface, namely the upper surface, of a monocrystalline silicon (1), a second hydrogenated amorphous silicon thin film layer (7), a second silicon dioxide thin film layer (8), a titanium dioxide thin film layer (9), a second transparent conductive oxide thin film layer (10) and a back metal electrode (11) are sequentially arranged on the front surface, namely the lower surface, of the monocrystalline silicon (1), the first hydrogenated amorphous silicon thin film layer (2) and the second hydrogenated amorphous silicon thin film layer (7) are passivation layers, the first silicon dioxide thin film layer (3) and the second silicon dioxide thin film layer (8) are passivation protection layers, the molybdenum trioxide thin film layer (4) is a hole transport layer, the titanium dioxide thin film layer (9) is an electron transport layer,
the single crystal silicon (1) is an n-type silicon wafer, a molybdenum trioxide thin film layer and a titanium dioxide thin film layer form a p-n junction, and the molybdenum trioxide thin film layer is used as a hole selective transport layer; the titanium dioxide film layer is used as an electron transport layer.
2. A silicon oxide composite passivation layer compound heterojunction contact silicon solar cell according to claim 1, characterized in that the silicon compound heterojunction contact solar cell is formed by connecting a plurality of basic units in series or/and in parallel, and connecting the corresponding front metal electrode (6) and the back metal electrode (11) in series or/and in parallel.
3. A silicon oxide composite passivation layer compound heterojunction contact silicon solar cell as claimed in claim 1, characterized in that the silicon wafer of the single crystal silicon (1) of the substrate is n-type with thickness generally between 131-; and ultrasonically cleaning the n-type silicon wafer by using deionized water, absolute ethyl alcohol and acetone to obtain a clean silicon wafer.
4. A silicon oxide composite passivation layer compound heterojunction contact silicon solar cell according to claim 1, wherein the first hydrogenated amorphous silicon thin film layer (2) and the second hydrogenated amorphous silicon thin film layer (7) have a thickness of 10nm and are deposited by chemical vapor deposition.
5. A silicon oxide composite passivation layer compound heterojunction contact silicon solar cell according to claim 1, characterized in that the first silicon dioxide thin film layer (3) and the second silicon dioxide thin film layer (8), having a thickness of 5nm, are deposited by chemical vapor deposition.
6. A silicon oxide composite passivation layer compound heterojunction contact silicon solar cell according to claim 1, characterized in that the front surface molybdenum trioxide thin film layer (3) and the back surface titanium dioxide thin film layer (8), having a thickness of 10nm, are deposited by thermal evaporation.
7. The silicon oxide composite passivation layer compound heterojunction contact silicon solar cell according to claim 1, wherein the first transparent conductive oxide thin film layer (5) and the second transparent conductive oxide thin film layer (10) are both Indium Tin Oxide (ITO) films with a thickness of 200nm, and are deposited by a radio frequency magnetron sputtering method.
8. A silicon oxide composite passivation layer compound heterojunction contact silicon solar cell as claimed in claim 1, wherein the front metal electrode (6) and the back metal electrode layer (11) are made of silver and have a thickness of 200nm by thermal evaporation.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108074994A (en) * | 2016-11-14 | 2018-05-25 | Lg电子株式会社 | Solar cell and its manufacturing method |
| WO2019050185A1 (en) * | 2017-09-05 | 2019-03-14 | 엘지전자 주식회사 | Solar cell and method for manufacturing same |
| CN110634968A (en) * | 2019-09-18 | 2019-12-31 | 浙江大学 | Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact |
| CN112701182A (en) * | 2020-12-29 | 2021-04-23 | 北京工业大学 | Solar cell with double-sided light incidence structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108074994A (en) * | 2016-11-14 | 2018-05-25 | Lg电子株式会社 | Solar cell and its manufacturing method |
| WO2019050185A1 (en) * | 2017-09-05 | 2019-03-14 | 엘지전자 주식회사 | Solar cell and method for manufacturing same |
| CN110634968A (en) * | 2019-09-18 | 2019-12-31 | 浙江大学 | Monocrystalline silicon heterojunction solar cell based on non-grid line and non-doped contact |
| CN112701182A (en) * | 2020-12-29 | 2021-04-23 | 北京工业大学 | Solar cell with double-sided light incidence structure |
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