CN221239628U - High-performance HBC solar cell structure - Google Patents
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- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 39
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 230000031700 light absorption Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 69
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000005922 Phosphane Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 238000002425 crystallisation Methods 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910000064 phosphane Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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- 230000008569 process Effects 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
The utility model discloses a high-performance HBC solar cell structure, which comprises a crystalline silicon substrate, wherein a first intrinsic amorphous silicon layer, a first silicon nitride film, a second silicon nitride film, a silicon oxynitride film and a silicon oxide film are sequentially arranged on the front surface of the crystalline silicon substrate from inside to outside, and the refractive index of the crystalline silicon substrate is sequentially reduced from inside to outside; the back surface of the crystalline silicon substrate is sequentially provided with a second intrinsic amorphous silicon layer, a doped microcrystalline silicon layer which is in interdigital arrangement, a transparent conductive layer and an electrode layer from inside to outside. The front surface of the battery structure adopts the first intrinsic amorphous silicon layer to laminate the high refractive index silicon nitride-low refractive index oxide multilayer antireflection film, so that the refractive index of the antireflection film is gradually reduced from inside to outside, incident light is refracted for multiple times in the film layer, light loss caused by large angle refraction due to direct incident light into the high refractive index silicon nitride is avoided, the optical utilization rate of the HBC front surface film layer is improved, light absorption is increased, and the photoelectric conversion efficiency of the HBC battery is improved.
Description
Technical Field
The utility model belongs to the technical field of solar cells, and particularly relates to a high-performance HBC solar cell structure.
Background
Crystalline silicon solar cells are devices that utilize the photovoltaic effect to convert light energy into electrical energy. The N-type Heterojunction Back Contact (HBC) monocrystalline silicon solar cell has the advantages of Heterojunction (HIT) and back contact (IBC) batteries, and is characterized in that the front surface of the battery is electrodeless, metal grid lines of positive and negative electrodes are arranged in an interdigital manner and the back surface of the battery, so that the N-type Heterojunction Back Contact (HBC) monocrystalline silicon solar cell has higher short-circuit current, the temperature coefficient of the battery can be effectively reduced, high open-circuit voltage and large short-circuit current can be obtained, and the laboratory efficiency reaches 26.63%. HBC batteries have the development potential of highest conversion efficiency, rapidly attracting research of a large number of research and development institutions and enterprises, and becoming one of the hottest technological routes.
The current HBC solar cell is not industrialized on a large scale, and the existing manufacturing technology also has the problems of low absorption of a long-wave spectrum by using an amorphous silicon film, easy occurrence of photoelectric effect degradation and the like. The front surface of the HBC solar cell is electrodeless, the front surface antireflection layer is mainly made of a silicon nitride film, and incident light with a short wave band is easier to reflect through the front surface of the cell, so that the utilization rate of the cell to light can be improved by further reducing the optical reflection of the front surface. The optical characteristics of the crystalline silicon material are optimized, and the photoelectric conversion efficiency of the crystalline silicon solar cell can be effectively improved. In order to reduce the influence of optical loss on the battery, a plurality of layers of antireflection films with good optical performance can be manufactured on the front surface, the reflection of light on the surface of the battery can be effectively reduced, and finally the purpose of improving the photoelectric conversion efficiency of the battery is achieved.
At present, the front anti-reflection layer of the HBC solar cell is mainly composed of a silicon nitride film, incident light of a short wave band is easily reflected by the front surface of the cell, optical loss is serious, photoelectric conversion efficiency is low, amorphous silicon or an amorphous silicon/microcrystalline silicon composite layer structure is used on the back surface, as in the HBC solar cell structure with amorphous silicon/microcrystalline silicon composite layer disclosed in China patent CN216902958U, the amorphous silicon film has low absorption to a long wave spectrum, photoelectric effect degradation is easily caused, and the like, but the amorphous silicon/microcrystalline silicon composite layer has complex manufacturing process, and the composite layer has poor film thickness uniformity and serious light parasitic absorption.
Disclosure of utility model
In order to overcome the defects of the prior art, the utility model provides a high-performance HBC solar cell structure which enhances the photoelectric conversion efficiency and improves the passivation effect.
The technical scheme adopted for solving the technical problems is as follows: the high-performance HBC solar cell structure comprises a crystalline silicon substrate, wherein a first intrinsic amorphous silicon layer, a first silicon nitride film, a second silicon nitride film, a silicon oxynitride film and a silicon oxide film are sequentially arranged on the front surface of the crystalline silicon substrate from inside to outside, and the refractive indexes of the first intrinsic amorphous silicon layer, the first silicon nitride film, the second silicon nitride film, the silicon oxynitride film and the silicon oxide film are sequentially reduced from inside to outside;
The back surface of the crystalline silicon substrate is sequentially provided with a second intrinsic amorphous silicon layer, a doped microcrystalline silicon layer which is in interdigital arrangement, a transparent conductive layer and an electrode layer from inside to outside.
The anti-reflection film in the solar cell structure gradually reduces the refractive index from inside to outside, so that incident light is refracted for many times in the film layer, light loss caused by large-angle refraction caused by direct incidence of the incident light on high-refractive-index silicon nitride is avoided, the problem of optical mismatch caused by large refractive index difference between the existing single-layer silicon nitride film layer and the semiconductor dielectric film layer is solved, the overall reflectivity of the front surface of the solar cell can be reduced, the light loss is reduced, the light absorption is increased, and the photoelectric conversion efficiency of the HBC cell is improved.
Further, the refractive index of the first silicon nitride film is 2.2-2.3, and the thickness of the first silicon nitride film is 20-30nm.
Further, the refractive index of the second silicon nitride film is 2.0-2.1, and the thickness of the second silicon nitride film is 10-20nm.
Further, the refractive index of the silicon oxynitride film is 1.6-1.9, and the thickness of the silicon oxynitride film is 5-10nm.
Further, the refractive index of the silicon oxide film is 1.3-1.5, and the thickness of the silicon oxide film is 5-10nm.
Further, the thickness of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer is 3-10nm.
Further, the doped microcrystalline silicon layer comprises an n+ doped microcrystalline silicon layer and a p+ doped microcrystalline silicon layer which are arranged in an interdigital mode.
Further, the thickness of the n+ doped microcrystalline silicon layer is 10-30nm; the thickness of the p+ doped microcrystalline silicon layer is 10-30nm.
Further, the thickness of the transparent conductive layer is 70-120nm.
The beneficial effects of the utility model are as follows: 1) The front surface of the battery structure is provided with the first intrinsic amorphous silicon laminated high-refractive-index silicon nitride-low-refractive-index oxide multilayer antireflection film, the optical matching performance of the first intrinsic amorphous silicon laminated multilayer antireflection film can be flexibly adjusted, the gradual reduction of the refractive index of the antireflection film from inside to outside is realized, incident light is refracted for many times in the film, light loss caused by large-angle refraction of the incident light directly incident to the high-refractive-index silicon nitride is avoided, the optical utilization rate of the HBC front surface film is improved, light absorption is increased, and the photoelectric conversion efficiency of the HBC battery is improved; 2) The back surface is replaced by doped microcrystalline silicon by the traditional doped amorphous silicon, the microcrystalline silicon film layer is simple to prepare, good in uniformity and high in flatness, low in porosity and small in light absorption coefficient, and the serious light parasitic absorption problem of the amorphous silicon layer is solved; 3) The problem of optical mismatch caused by large refractive index difference between the existing single-layer silicon nitride film layer and the semiconductor dielectric film layer is solved, the integral reflectivity of the front surface of the solar cell can be reduced, the dependence on ITO conductivity is reduced by the microcrystalline silicon structure, the microcrystalline silicon structure has high crystallization rate, the cell string resistance is reduced, the FF is improved, the light absorption coefficient is reduced to be small, the serious light parasitic absorption problem of the amorphous silicon layer is improved, and the photoelectric conversion efficiency of the HBC cell is improved.
Drawings
Fig. 1 is a schematic view of the layer structure of the present utility model.
Fig. 2 is a flow chart of a process for manufacturing a battery structure according to the present utility model.
The semiconductor device comprises a 1-crystalline silicon substrate, a 21-first intrinsic amorphous silicon layer, a 22-first silicon nitride film, a 23-second silicon nitride film, a 24-silicon oxynitride film, a 25-silicon oxide film, a 31-second intrinsic amorphous silicon layer, a 321-p+ doped microcrystalline silicon layer, a 322-n+ doped microcrystalline silicon layer, a 33-transparent conductive layer, a 341-positive electrode layer and a 342-negative electrode layer.
Detailed Description
In order to make the present utility model better understood by those skilled in the art, the following description of the technical solutions of the present utility model will be made in detail, but not all embodiments of the present utility model are apparent to some embodiments of the present utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.
As shown in fig. 1, a high performance HBC solar cell structure includes a crystalline silicon substrate 1, the crystalline silicon substrate 1 having a front surface and a back surface, the front surface of which is provided with a first intrinsic amorphous silicon layer 21, a first silicon nitride film 22, a second silicon nitride film 23, a silicon oxynitride film 24 and a silicon oxide film 25 in order from inside to outside, and refractive indexes of the first intrinsic amorphous silicon layer 21, the first silicon nitride film 22, the second silicon nitride film 23, the silicon oxynitride film 24 and the silicon oxide film 25 are reduced in order from inside to outside.
Specifically, the thickness of the first intrinsic amorphous silicon layer 21 is 3-10nm; the refractive index of the first silicon nitride film 22 is 2.2-2.3, and the thickness thereof is 20-30nm; the second silicon nitride film 23 has a refractive index of 2.0 to 2.1 and a thickness of 10 to 20nm; the silicon oxynitride film 24 has a refractive index of 1.6 to 1.9 and a thickness of 5 to 10nm; the silicon oxide film 24 has a refractive index of 1.3 to 1.5 and a thickness of 5 to 10nm.
The back surface of the crystalline silicon substrate 1 is provided with a second intrinsic amorphous silicon layer 31, a doped microcrystalline silicon layer in an interdigital arrangement, a transparent conductive layer 33 and an electrode layer in order from inside to outside.
Specifically, the thickness of the second intrinsic amorphous silicon layer 31 is 3-10nm; the doped microcrystalline silicon layer comprises an n+ doped microcrystalline silicon layer 322 and a p+ doped microcrystalline silicon layer 321 which are arranged in an interdigital manner, and the thickness of the doped microcrystalline silicon layer is 10-30nm; the transparent conductive layer 33 is a transparent conductive film (TCO); the electrode layers include a positive electrode layer 341 and a negative electrode layer 342.
Wherein, intrinsic amorphous silicon layer: is an amorphous silicon material containing a large amount of silicon-hydrogen bonds, also called hydrogenated amorphous silicon, i.e. a-Si: H.
Silicon nitride film: the silicon nitride film is a dielectric material with wide application, and is commonly used as an electric insulating layer of microelectronic technology.
Silicon oxynitride film: the film of the silicon oxynitride is abbreviated as SiOxNy, and has the advantages of light-emitting property and adjustable refractive index. The preparation method mainly comprises the following steps: chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), and high temperature nitridation.
Silicon oxide film: a silicon oxide film is a film composed of silicon atoms and oxygen atoms, abbreviated as SiOx, which can be used for suppressing conduction of electrons, and is widely used for packaging electronic components.
Doped microcrystalline silicon: it means that a certain amount of impurities are doped in the microcrystalline silicon material, and the doping material is usually pentavalent elements such as phosphorus, antimony and bismuth, or trivalent elements such as boron, having the physical structure of amorphous silicon and the optical and electrical properties of microcrystalline silicon.
FF: the ratio of the maximum output power to the limit output power, namely a filling factor for short, is one of important parameters for representing the advantages and disadvantages of the solar cell, and the larger the filling factor is, the better the performance of the solar cell is.
As shown in fig. 2, the battery manufacturing process flow in the utility model is as follows:
s1: double-sided polishing and texturing are carried out on the crystalline silicon substrate 1, and textured surfaces are formed on the front surface and the surface to be textured;
s2: depositing a first intrinsic amorphous silicon layer 21 on the front surface of the crystalline silicon substrate 1 and a second intrinsic amorphous silicon layer 31 on the back surface by PECVD;
S3: depositing an n+ doped microcrystalline silicon layer 322 on the second intrinsic amorphous silicon layer 31 on the back surface of the crystalline silicon substrate 1 by adopting RF-PECVD, wherein n+ doping is prepared by depositing mixed doped gas phosphane PH 3 of silane SiH 4 diluted by hydrogen H 2;
S4: a layer of silicon dioxide is deposited on the two sides of the front surface and the back surface of the crystalline silicon substrate 1 by adopting PECVD and low-temperature technology to be used as a mask;
S5: carrying out laser grooving and cleaning on a p+ region on the back surface of the crystalline silicon substrate 1;
S6: adopting RF-PECVD to deposit a p+ doped microcrystalline silicon layer 321 on the back surface of the crystalline silicon substrate 1, wherein p+ doping is prepared by depositing silane SiH 4 gas mixed doping gas borane B 2H6 diluted by hydrogen H 2;
s7: etching, namely removing the mask layer and the n+ doped microcrystalline silicon layer 322 on the n+ region by utilizing an HF acid solution;
S8: adopting plasma enhanced chemical vapor deposition equipment, carrying reactive gases silane and ammonia by nitrogen, preparing a multilayer anti-reflection film on the front surface of the crystalline silicon substrate 1 through a radio frequency generated plasma reaction, and realizing refractive index gradual change by controlling the ammonia/silane airflow ratio of a silicon nitride layer; the refractive index of the first silicon nitride film 22 ranges from 2.2 to 2.3, the thickness of the first silicon nitride film 22 ranges from 20 to 30nm, the refractive index of the second silicon nitride film 23 ranges from 2.0 to 2.1, the thickness of the second silicon nitride film 23 ranges from 10 to 20nm, the refractive index of the silicon oxynitride film 24 ranges from 1.6 to 1.9, the thickness of the silicon oxynitride film 24 ranges from 5 to 10nm, the refractive index of the silicon oxide film 25 ranges from 1.3 to 1.5, and the thickness of the silicon oxide film 25 ranges from 5 to 10nm;
S9: coating the back surface of the crystalline silicon substrate 1, preparing a TCO transparent conductive layer 33 on the back surface of the crystalline silicon substrate 1, adopting any one of RPD and PVD methods to prepare the TCO transparent conductive layer 33, wherein the thickness of the TCO transparent conductive layer 33 is 70-120nm,
S10: the negative electrode layer 342 and the positive electrode layer 341 are prepared by any one of screen printing, ink-jet printing, laser transfer printing, chemical plating and electroplating,
S11: slotting the middle areas of an n+ area and a p+ area on the back surface of the crystalline silicon substrate 1 by laser,
S12: screen printing and sintering.
The foregoing detailed description is provided to illustrate the present utility model and not to limit the utility model, and any modifications and changes made to the present utility model within the spirit of the present utility model and the scope of the appended claims fall within the scope of the present utility model.
Claims (9)
1. The utility model provides a high performance HBC solar cell structure, includes crystalline silicon substrate, its characterized in that:
The front surface of the crystalline silicon substrate is sequentially provided with a first intrinsic amorphous silicon layer, a first silicon nitride film, a second silicon nitride film, a silicon oxynitride film and a silicon oxide film from inside to outside, and the refractive indexes of the first intrinsic amorphous silicon layer, the first silicon nitride film, the second silicon nitride film, the silicon oxynitride film and the silicon oxide film are sequentially reduced from inside to outside;
The back surface of the crystalline silicon substrate is sequentially provided with a second intrinsic amorphous silicon layer, a doped microcrystalline silicon layer which is in interdigital arrangement, a transparent conductive layer and an electrode layer from inside to outside.
2. The high performance HBC solar cell structure of claim 1 wherein: the refractive index of the first silicon nitride film is 2.2-2.3, and the thickness of the first silicon nitride film is 20-30nm.
3. The high performance HBC solar cell structure of claim 1 wherein: the refractive index of the second silicon nitride film is 2.0-2.1, and the thickness of the second silicon nitride film is 10-20nm.
4. The high performance HBC solar cell structure of claim 1 wherein: the refractive index of the silicon oxynitride film is 1.6-1.9, and the thickness of the silicon oxynitride film is 5-10nm.
5. The high performance HBC solar cell structure of claim 1 wherein: the refractive index of the silicon oxide film is 1.3-1.5, and the thickness of the silicon oxide film is 5-10nm.
6. The high performance HBC solar cell structure of claim 1 wherein: the thickness of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer is 3-10nm.
7. The high performance HBC solar cell structure of claim 1 wherein: the doped microcrystalline silicon layer comprises an n+ doped microcrystalline silicon layer and a p+ doped microcrystalline silicon layer which are arranged in an interdigital mode.
8. The high performance HBC solar cell structure of claim 7 wherein: the thickness of the n+ doped microcrystalline silicon layer is 10-30nm; the thickness of the p+ doped microcrystalline silicon layer is 10-30nm.
9. The high performance HBC solar cell structure of claim 1 wherein: the thickness of the transparent conductive layer is 70-120nm.
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| Publication Number | Publication Date |
|---|---|
| CN221239628U true CN221239628U (en) | 2024-06-28 |
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