CN104253165A - Solar cell device and method for manufacturing same - Google Patents
Solar cell device and method for manufacturing same Download PDFInfo
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- CN104253165A CN104253165A CN201310264315.2A CN201310264315A CN104253165A CN 104253165 A CN104253165 A CN 104253165A CN 201310264315 A CN201310264315 A CN 201310264315A CN 104253165 A CN104253165 A CN 104253165A
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell device. The solar cell device comprises an anode, a hole buffer layer, an active layer, an electron buffer layer and a cathode which are sequentially stacked on one another. The active layer is made of mixtures of poly-3-hexyl-thiophene and 6,6-phenyl-C<61>-methyl butyrate, the cathode comprises a metal permeation layer, a metal oxide layer and a metal conducting layer, the metal permeation layer is stacked on the surface of the electron buffer layer, the metal oxide layer is stacked on the surface of the metal permeation layer, the metal conducting layer is stacked on the surface of the metal oxide layer, the metal permeation layer is made of aluminum or silver or gold or platinum, the metal oxide layer is made of titanium dioxide or zinc oxide or vanadium oxide, the metal conducting layer is made of aluminum or silver or gold or platinum, the thickness of the metal permeation layer ranges from 5nm to 20nm, and the thickness of the metal conducting layer ranges from 200nm to 500nm. The solar cell device has the advantage of high energy conversion efficiency. The invention further provides a method for manufacturing the solar cell device.
Description
Technical field
The present invention relates to a kind of solar cell device and preparation method thereof.
Background technology
Solar cell device is owing to having cheapness, the advantage such as clean, renewable and being widely used.Solar cell device structure conventional at present comprises the anode, Hole-injecting Buffer Layer for Improvement, active layer, electron buffer layer and the negative electrode that stack gradually.After the exciton dissociation of active layer produces hole and electronics, hole arrives anode, and electronics arrives negative electrode, thus is collected by electrode, forms effective power conversion.At present, the energy conversion efficiency of traditional solar cell is lower.
Summary of the invention
Based on this, be necessary to provide solar cell device that a kind of energy conversion efficiency is higher and preparation method thereof.
A kind of solar cell device, comprises the anode, Hole-injecting Buffer Layer for Improvement, active layer, electron buffer layer and the negative electrode that stack gradually, and the material of described active layer is poly-3-hexyl thiophene and 6,6-phenyl-C
61the mixture of-methyl butyrate, described negative electrode comprise be laminated in described electron buffer layer surface metal penetration layer, be laminated in the metal oxide layer on described metal penetration layer surface and be laminated in the metal conducting layer on described metal oxide layer surface, the material of described metal penetration layer is aluminium, silver, gold or platinum, the material of described metal oxide layer is titanium dioxide, zinc oxide or vanadic oxide, the material of described metal conducting layer is aluminium, silver, gold or platinum, the thickness of described metal penetration layer is 5nm ~ 20nm, and the thickness of described metal conducting layer is 200nm ~ 500nm.
In a preferred embodiment, the thickness of described metal oxide layer is 50nm ~ 200nm.
In a preferred embodiment, the material of described Hole-injecting Buffer Layer for Improvement is the mixture of poly-3,4-dioxyethylene thiophene and polyphenyl sulfonate.
In a preferred embodiment, the material of described electron buffer layer is cesium azide, lithium fluoride, lithium carbonate or cesium carbonate.
In a preferred embodiment, poly-3-hexyl thiophene and described 6,6-phenyl-C described in described active layer
61the mass ratio of-methyl butyrate is 1:0.5 ~ 1:4.
A preparation method for solar cell device, comprises the following steps:
Hole-injecting Buffer Layer for Improvement is prepared in spin coating on the anode surface;
On described Hole-injecting Buffer Layer for Improvement, spin coating contains poly-3-hexyl thiophene and 6,6-phenyl-C
61the solution of-methyl butyrate, forms active layer;
Electron buffer layer is prepared on the surface of described active layer successively evaporation;
On described electron buffer layer surface, evaporation prepares metal penetration layer, and the material of described metal penetration layer is aluminium, silver, gold or platinum, and the thickness of described metal penetration layer is 5nm ~ 20nm;
On described metal penetration layer surface, evaporation prepares metal oxide layer, and the material of described metal oxide layer is titanium dioxide, zinc oxide or vanadic oxide; And
On described metal oxide layer surface, evaporation prepares metal conducting layer, described metal penetration layer, metal oxide layer and metal conducting layer composition negative electrode, the material of described metal conducting layer is aluminium, silver, gold or platinum, and the thickness of described metal conducting layer is 200nm ~ 500nm.
In a preferred embodiment, the thickness of described metal oxide layer is 50nm ~ 200nm.
In a preferred embodiment, the material of described Hole-injecting Buffer Layer for Improvement is the mixture of poly-3,4-dioxyethylene thiophene and polyphenyl sulfonate.
In a preferred embodiment, the material of described electron buffer layer is cesium azide, lithium fluoride, lithium carbonate or cesium carbonate.
In a preferred embodiment, poly-3-hexyl thiophene and described 6,6-phenyl-C described in described active layer
61the mass ratio of-methyl butyrate is 1:0.5 ~ 1:4.
Above-mentioned solar cell device and preparation method thereof, the negative electrode of three-layer composite structure is formed by metal and metal oxide, negative electrode is by the metal penetration layer stacked gradually, metal oxide layer and metal conducting layer composition, metal penetration layer is mainly by thinner thickness, ensure light through, by not by the light that active layer absorbs be able to through, and metal oxide layer mainly adopts the Large stone such as titanium dioxide, the material composition that specific area is larger, pass through evaporation, the membrana granulosa Rotating fields that one deck is concavo-convex is formed on metal penetration layer, increase the roughness on metal penetration layer surface, this shape can make through light carry out scattering, change photon direction, the recombination losses of photon and cathodic metal free electron is reduced, and (this compound can produce light loss, generally produced with parallel free electron effect by vertical photon), and then prepare layer of metal conductive layer, mainly improve conductivity by thicker thickness, and the raising of thickness and light can be reflected, improve negative electrode reflectivity, thus get back to active layer and be absorbed and used again, thus raising photoelectric conversion efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of the solar cell device of an embodiment;
Fig. 2 is preparation method's flow chart of the solar cell device of an embodiment;
Fig. 3 is the solar cell device of embodiment 1 and the current density of traditional solar cell device and voltage relationship figure.
Embodiment
For the ease of understanding the present invention, below with reference to relevant drawings, the present invention is described more fully.First-selected embodiment of the present invention is given in accompanying drawing.But the present invention can realize in many different forms, is not limited to embodiment described herein.On the contrary, the object of these embodiments is provided to be make to disclosure of the present invention more thoroughly comprehensively.
Refer to Fig. 1, the solar cell device 100 of an embodiment comprises the anode 10, Hole-injecting Buffer Layer for Improvement 20, active layer 30, electron buffer layer 40 and the negative electrode 50 that stack gradually.
Anode 10 is indium tin oxide glass (ITO), mixes the tin oxide glass (FTO) of fluorine, mixes the zinc oxide glass (AZO) of aluminium or mixes the zinc oxide glass (IZO) of indium.
Hole-injecting Buffer Layer for Improvement 20 is formed at anode 10 surface.The material of Hole-injecting Buffer Layer for Improvement 20 is the mixture of poly-3,4-dioxyethylene thiophene (PEDOT) and polyphenyl sodium sulfonate (PSS).Wherein the mass ratio of PEDOT and PSS is 2:1 ~ 6:1, is preferably 2:1.The thickness of Hole-injecting Buffer Layer for Improvement 20 is 20nm ~ 80nm, is preferably 50nm.
Active layer 30 is formed at Hole-injecting Buffer Layer for Improvement 20 surface.The material of active layer 30 is poly-3-hexyl thiophene (P3HT) and 6,6-phenyl-C
61-methyl butyrate (PC
61bM) mixture.Wherein P3HT:PC
61the quality of BM is 1:0.5 ~ 1:4, is preferably 1:2.5.The thickness of active layer 30 is 100nm ~ 300nm, is preferably 140nm.
Electron buffer layer 40 is formed at active layer 30 surface.The material of electron buffer layer 40 is selected from cesium azide (CsN
3), lithium fluoride (LiF), lithium carbonate (Li
2cO
3) and cesium carbonate (Cs
2cO
3) at least one, be preferably LiF.The thickness of electron buffer layer 40 is 0.5nm ~ 10nm, is preferably 0.7nm.
Negative electrode 50 is formed at electron buffer layer 40 surface.Negative electrode 50 comprises the metal conducting layer 56 being formed at the metal penetration layer 52 being laminated in electron buffer layer 40 surface, the metal oxide layer 54 being laminated in metal penetration layer 52 surface and being laminated in metal oxide layer 54 surface.
The material of metal penetration layer 52 is aluminium (Al), silver (Ag), gold (Au) or platinum (Pt).The thickness of metal penetration layer 52 is 5nm ~ 20nm.
The material of metal oxide layer 54 is titanium dioxide (TiO
2), zinc oxide (ZnO) or vanadic oxide (V
2o
5).The thickness of metal oxide layer is 50nm ~ 200nm.
The material of metal conducting layer 56 is aluminium (Al), silver (Ag), gold (Au) or platinum (Pt).The thickness of metal conducting layer 56 is 200nm ~ 500nm.
This solar cell device 100, the negative electrode of three-layer composite structure is formed by metal and metal oxide, negative electrode is by the metal penetration layer stacked gradually, metal oxide layer and metal conducting layer composition, metal penetration layer is mainly by thinner thickness, ensure light through, by not by the light that active layer absorbs be able to through, and metal oxide layer mainly adopts the Large stone such as titanium dioxide, the material composition that specific area is larger, pass through evaporation, the membrana granulosa Rotating fields that one deck is concavo-convex is formed on metal penetration layer, increase the roughness on metal penetration layer surface, this shape can make through light carry out scattering, change photon direction, the recombination losses of photon and cathodic metal free electron is reduced, and (this compound can produce light loss, generally produced with parallel free electron effect by vertical photon), and then prepare layer of metal conductive layer, mainly improve conductivity by thicker thickness, and the raising of thickness and light can be reflected, improve negative electrode reflectivity, thus get back to active layer and be absorbed and used again, thus raising photoelectric conversion efficiency.
It should be noted that, above-mentioned solar cell device 100 can also arrange other functional layers as required.
Please refer to Fig. 2, the preparation method of the solar cell device 100 of an embodiment, it comprises the following steps:
Step S110, prepare Hole-injecting Buffer Layer for Improvement 20 in the surperficial spin coating of anode 10.
Anode 10 is indium tin oxide glass (ITO), mixes the tin oxide glass (FTO) of fluorine, mixes the zinc oxide glass (AZO) of aluminium or mixes the zinc oxide glass (IZO) of indium.
In present embodiment, antianode 10 pre-treatment comprises removes the oxonium ion process such as the organic pollution on anode 10 surface and antianode 10 carry out.Anode 10 is adopted each Ultrasonic Cleaning 15min of liquid detergent, deionized water, acetone, ethanol, isopropyl acetone, to remove the organic pollution on substrate 10 surface; It is 5min ~ 15min that antianode 10 carries out the oxonium ion processing time such as grade, and power is 10 ~ 50W.
Hole-injecting Buffer Layer for Improvement 20 is by containing the solution preparation of hole padded coaming in the surperficial spin coating of anode 10.The rotating speed of spin coating is 2000rpm ~ 6000rpm, and the time is 10s ~ 30s, and preferably, the rotating speed of spin coating is 3000rpm, and the time is 20s.Hole padded coaming is the mixture of poly-3,4-dioxyethylene thiophene (PEDOT) and polyphenyl sodium sulfonate (PSS).Wherein the mass ratio of PEDOT and PSS is 2:1 ~ 6:1, is preferably 2:1.In solution containing hole padded coaming, the mass percentage of PEDOT is 1% ~ 5%, and be preferably 3.5%, solvent is water.Heat 15 minutes ~ 60 minutes at 100 DEG C ~ 200 DEG C after spin coating, preferably heat 30 minutes at 200 DEG C.The thickness of Hole-injecting Buffer Layer for Improvement 20 is 20nm ~ 80nm, is preferably 50nm.
Step S120, prepare active layer 30 in the surperficial spin coating of Hole-injecting Buffer Layer for Improvement 20.
Active layer 30 is spin-coated on Hole-injecting Buffer Layer for Improvement 20 surface by active layer solution and makes.The rotating speed of spin coating is 3000rpm ~ 6000rpm, and the time is 10s ~ 30s, and preferably, spin coating rotating speed is 4000rpm, and the time is 10s.In active layer solution, the concentration of active layer material is 8mg/ml ~ 30mg/ml, is preferably 25mg/ml.The solvent of active layer solution is selected from least one in toluene, dimethylbenzene, chlorobenzene and chloroform, is preferably chlorobenzene.Active layer material is poly-3-hexyl thiophene (P3HT) and 6,6-phenyl-C
61-methyl butyrate (PC
61bM) mixture.Wherein P3HT:PC
61the quality of BM is 1:0.5 ~ 1:4, is preferably 1:2.5.Spin coating active layer 30 carries out in the glove box being full of inert gas, anneals 5 minutes ~ 100 minutes afterwards at 50 DEG C ~ 200 DEG C, preferably anneals 20 minutes at 100 DEG C.The thickness of active layer 30 is 100nm ~ 300nm, is preferably 140nm.
Step S130, prepare electron buffer layer 40 at the surperficial evaporation of active layer 30.
Electron buffer layer 40 is formed at active layer 30 surface.The material of electron buffer layer 40 is selected from cesium azide (CsN
3), lithium fluoride (LiF), lithium carbonate (Li
2cO
3) and cesium carbonate (Cs
2cO
3) at least one, be preferably LiF.The thickness of electron buffer layer 40 is 0.5nm ~ 10nm, is preferably 0.7nm.
Evaporation is 3 × 10 at vacuum pressure
-3~ 2 × 10
-5carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Step S140, prepare metal penetration layer 52 at the surperficial evaporation of electron buffer layer 40.
The material of metal penetration layer 52 is aluminium (Al), silver (Ag), gold (Au) or platinum (Pt).The thickness of metal penetration layer 52 is 5nm ~ 20nm.
Preferably, evaporation is 3 × 10 at vacuum pressure
-3~ 2 × 10
-5carry out under Pa, evaporation rate is 1nm/s ~ 10nm/s.
Step S150, prepare metal oxide layer 54 at the surperficial evaporation of metal penetration layer 52.
The material of metal oxide layer 54 is titanium dioxide (TiO
2), zinc oxide (ZnO) or vanadic oxide (V
2o
5).The thickness of metal oxide layer is 50nm ~ 200nm.
Metal oxide layer 54 adopts electron beam evaporation plating to prepare.The energy density of electron beam evaporation plating is 10W/cm
2~ l00W/cm
2.
Step S160, prepare metal conducting layer 56 at the surperficial evaporation of metal oxide layer 54.
The material of metal conducting layer 56 is aluminium (Al), silver (Ag), gold (Au) or platinum (Pt).The thickness of metal conducting layer 56 is 200nm ~ 500nm.
Preferably, evaporation is 3 × 10 at vacuum pressure
-3~ 2 × 10
-5carry out under Pa, evaporation rate is 1nm/s ~ 10nm/s.
Above-mentioned solar cell device preparation method, preparation technology is simple, and the energy conversion efficiency of the solar cell device of preparation is higher.
Below in conjunction with specific embodiment, the preparation method to solar cell device provided by the invention is described in detail.
The embodiment of the present invention and the preparation used by comparative example and tester are: high vacuum coating equipment (scientific instrument development center, Shenyang Co., Ltd, pressure <1 × 10
-32602), be the white light source of simulated solar irradiation with the filter set cooperation of 500W xenon lamp (Osram) and AM1.5 Pa), current-voltage tester (Keithly company of the U.S., model:.
Embodiment 1
Structure prepared by the present embodiment is: ITO/PEDOT:PSS/P3HT:PC
61bM/LiF/Al/TiO
2the solar cell device of/Al.Wherein, "/" presentation layer stack structure, ": " represents doping or mixing, and following examples are identical.
First ITO is carried out photoetching treatment, be cut into required size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, remove the organic pollution of glass surface; Clean up and carry out oxygen plasma treatment to conductive substrates afterwards, the processing time is 10min, and power is 20W; Hole-injecting Buffer Layer for Improvement is prepared in spin coating, and the mass fraction of material to be the mass ratio of PEDOT:PSS be 2:1, PEDOT is 3.5%, and the rotating speed of spin coating is 3000rpm, and the time is 20s, heats 30min after spin coating at 200 DEG C, and thickness is 50nm; Spin coating active layer, active layer is P3HT and PC of 25mg/ml by concentration
61the solution spin coating of BM forms, and solvent is chlorobenzene, P3HT and PC
61the mass ratio of BM is 1:2.5, and the rotating speed of spin coating is 4000rpm, and the time is 10s, and anneal 20 minutes at 100 DEG C after spin coating, THICKNESS CONTROL is at 140nm.Then evaporation prepares electron buffer layer, and material is LiF, and thickness is 0.7nm, and evaporation is 5 × 10 at vacuum pressure
-4carry out under Pa, evaporation rate is 0.2nm/s; Evaporation negative electrode, negative electrode comprises the metal penetration layer, metal oxide layer and the metal conducting layer that stack gradually, first prepares metal penetration layer, is Al, and adopt hot evaporation to prepare, thickness is 10nm, then prepares metal oxide layer, and material is TiO
2, be electron beam evaporation plating, thickness is 100nm, finally prepares metal conducting layer, and material is Al, adopts hot evaporation to prepare, and thickness is 300nm, and evaporation is 5 × 10 at vacuum pressure
-4carry out under Pa, hot evaporation rate is 4nm/s, and the energy density of electron beam evaporation plating is 50W/cm
2.Finally obtain desired polymer solar cell device.
Refer to Fig. 3, the structure being depicted as preparation in embodiment 1 is ITO/PEDOT:PSS/P3HT:PC
61bM/LiF/Al/TiO
2solar cell device (curve 1) and traditional structure of/Al are current density and the voltage relationship of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al solar cell device (curve 2), and the structure that table 1 is depicted as preparation in embodiment 1 is ITO/PEDOT:PSS/P3HT:PC
61bM/LiF/Al/TiO
2the solar cell device of/Al and traditional structure are the current density of ITO/PEDOT:PSS/P3HT:PCBM/LiF/Al solar cell device, voltage, energy conversion efficiency (η) and fill factor, curve factor data.In traditional solar cell device, each layer thickness is identical with each layer thickness in solar cell device prepared by embodiment 1.
Table 1
| ? | Current density (mA/cm 2） | Voltage (V) | η（%） | Fill factor, curve factor |
| Curve 1 | 12.75 | 0.69 | 3.34 | 0.38 |
| Curve 2 | 8.26 | 0.67 | 2.07 | 0.37 |
Can see from table 1 and Fig. 3, conventional solar cell device current density is 8.26mA/cm
2, and solar cell device current density prepared by embodiment 1 has brought up to 12.75mA/cm
2, this illustrates, photoelectric conversion efficiency can be improved in intermediate layer of the present invention.The energy conversion efficiency of traditional solar cell device is 2.07%, and the energy conversion efficiency of solar cell device prepared by embodiment 1 is 3.34%.
Below the current density of each embodiment and voltage curve, current density, voltage, energy conversion efficiency and fill factor, curve factor all similar with embodiment 1, each solar cell device also has similar energy conversion efficiency, repeats no more below.
Embodiment 2
Structure prepared by the present embodiment is IZO/PEDOT:PSS/P3HT:PC
61bM/Cs
2cO
3the solar cell device of/Ag/ZnO/Au.
First IZO is carried out photoetching treatment, be cut into required size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, remove the organic pollution of glass surface; Clean up and carry out oxygen plasma treatment to conductive substrates afterwards, the processing time is 15min, and power is 10W; Hole-injecting Buffer Layer for Improvement is prepared in spin coating, and the mass fraction of material to be the mass ratio of PEDOT:PSS be 2:1, PEDOT is 5%, and the rotating speed of spin coating is 6000rpm, and the time is 30s, heats 60min after spin coating at 100 DEG C, and thickness is 20nm; Spin coating active layer, active layer is P3HT and PC of 8mg/ml by concentration
61the solution spin coating of BM forms, and solvent is toluene, P3HT and PC
61the mass ratio of BM is 1:0.5, and the rotating speed of spin coating is 4000rpm, and the time is 10s, and anneal 100 minutes at 50 DEG C after spin coating, THICKNESS CONTROL is at 300nm.Then evaporation prepares electron buffer layer, and material is Cs
2cO
3, thickness is 5nm, and evaporation is 3 × 10 at vacuum pressure
-3carry out under Pa, evaporation rate is 0.1nm/s; Evaporation negative electrode, negative electrode comprises the metal penetration layer, metal oxide layer and the metal conducting layer that stack gradually, first prepares metal penetration layer, material is Ag, adopts hot evaporation to prepare, and thickness is 5nm, then prepare metal oxide layer, material is ZnO, is electron beam evaporation plating, thickness is 200nm, finally prepare metal conducting layer, material is Au, adopts hot evaporation to prepare, thickness is 200nm, and hot evaporation is 3 × 10 at vacuum pressure
-3carry out under Pa, evaporation rate is 1nm/s, and the energy density of electron beam evaporation plating is 10W/cm
2.Finally obtain desired polymer solar cell device.
Embodiment 3
Structure prepared by the present embodiment is FTO/PEDOT:PSS/P3HT:PC
61bM/CsN
3/ Pt/V
2o
5the solar cell device of/Ag.
First FTO is carried out photoetching treatment, be cut into required size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, remove the organic pollution of glass surface; Clean up and carry out oxygen plasma treatment to conductive substrates afterwards, the processing time is 5min, and power is 50W; Hole-injecting Buffer Layer for Improvement is prepared in spin coating, and the mass fraction of material to be the mass ratio of PEDOT:PSS be 6:1, PEDOT is 1%, and the rotating speed of spin coating is 2000rpm, and the time is 10s, heats 15min after spin coating at 200 DEG C, and thickness is 80nm; Spin coating active layer, active layer is P3HT and PC of 30mg/ml by concentration
61the solution spin coating of BM forms, and solvent is dimethylbenzene, P3HT and PC
61the mass ratio of BM is 1:4, and the rotating speed of spin coating is 6000rpm, and the time is 30s, and anneal 5 minutes at 200 DEG C after spin coating, THICKNESS CONTROL is at 100nm.Then evaporation prepares electron buffer layer, and material is CsN
3, thickness is 10nm, and evaporation is 2 × 10 at vacuum pressure
-5carry out under Pa, evaporation rate is 1nm/s; Evaporation negative electrode, negative electrode comprises the metal penetration layer, metal oxide layer and the metal conducting layer that stack gradually, first prepares metal penetration layer, and material is Pt, and adopt hot evaporation to prepare, thickness is 20nm, then prepares metal oxide layer, and material is V
2o
5, be electron beam evaporation plating, thickness is 50nm, finally prepares metal conducting layer, and material is Ag, adopts hot evaporation to prepare, and thickness is 500nm, and evaporation is 2 × 10 at vacuum pressure
-5carry out under Pa, evaporation rate is 10nm/s, and the energy density of electron beam evaporation plating is l00W/cm
2.Finally obtain desired polymer solar cell device.
Embodiment 4
Structure prepared by the present embodiment is ITO/PEDOT:PSS/P3HT:PC
61bM/Li
2cO
3the solar cell device of/Au/ZnO/Pt.
First ITO is carried out photoetching treatment, be cut into required size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, remove the organic pollution of glass surface; Clean up and carry out oxygen plasma treatment to conductive substrates afterwards, the processing time is 10min, and power is 25W; Hole-injecting Buffer Layer for Improvement is prepared in spin coating, and the mass fraction of material to be the mass ratio of PEDOT:PSS be 3:1, PEDOT is 3.5%, and the rotating speed of spin coating is 5000rpm, and the time is 20s, heats 20min after spin coating at 150 DEG C, and thickness is 60nm; Spin coating active layer, active layer is P3HT and PC of 10mg/ml by concentration
61the solution spin coating of BM forms, and solvent is chloroform, P3HT and PC
61the mass ratio of BM is 1:3, and the rotating speed of spin coating is 5000rpm, and the time is 20s, and anneal 30 minutes at 100 DEG C after spin coating, THICKNESS CONTROL is at 200nm.Then evaporation prepares electron buffer layer, and material is Li
2cO
3, thickness is 1nm, and evaporation is 8 × 10 at vacuum pressure
-5carry out under Pa, evaporation rate is 0.2nm/s; Evaporation negative electrode, negative electrode comprises the metal penetration layer, metal oxide layer and the metal conducting layer that stack gradually, first prepares metal penetration layer, material is Au, adopts hot evaporation to prepare, and thickness is 15nm, then prepare metal oxide layer, material is ZnO, is electron beam evaporation plating, thickness is 150nm, finally prepare metal conducting layer, material is Pt, adopts hot evaporation to prepare, thickness is 400nm, and evaporation is 8 × 10 at vacuum pressure
-5carry out under Pa, hot evaporation rate is 2nm/s, and the energy density of electron beam evaporation plating is 30W/cm
2.Finally obtain desired polymer solar cell device.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a solar cell device, is characterized in that, comprises the anode, Hole-injecting Buffer Layer for Improvement, active layer, electron buffer layer and the negative electrode that stack gradually, and the material of described active layer is poly-3-hexyl thiophene and 6,6-phenyl-C
61the mixture of-methyl butyrate, described negative electrode comprise be laminated in described electron buffer layer surface metal penetration layer, be laminated in the metal oxide layer on described metal penetration layer surface and be laminated in the metal conducting layer on described metal oxide layer surface, the material of described metal penetration layer is aluminium, silver, gold or platinum, the material of described metal oxide layer is titanium dioxide, zinc oxide or vanadic oxide, the material of described metal conducting layer is aluminium, silver, gold or platinum, the thickness of described metal penetration layer is 5nm ~ 20nm, and the thickness of described metal conducting layer is 200nm ~ 500nm.
2. solar cell device according to claim 1, is characterized in that: the thickness of described metal oxide layer is 50nm ~ 200nm.
3. solar cell device according to claim 1, is characterized in that: the material of described Hole-injecting Buffer Layer for Improvement is the mixture of poly-3,4-dioxyethylene thiophene and polyphenyl sulfonate.
4. solar cell device according to claim 1, is characterized in that: the material of described electron buffer layer is cesium azide, lithium fluoride, lithium carbonate or cesium carbonate.
5. solar cell device according to claim 1, is characterized in that: poly-3-hexyl thiophene and described 6,6-phenyl-C described in described active layer
61the mass ratio of-methyl butyrate is 1:0.5 ~ 1:4.
6. a preparation method for solar cell device, is characterized in that, comprises the following steps:
Hole-injecting Buffer Layer for Improvement is prepared in spin coating on the anode surface;
On described Hole-injecting Buffer Layer for Improvement, spin coating contains poly-3-hexyl thiophene and 6,6-phenyl-C
61the solution of-methyl butyrate, forms active layer;
Electron buffer layer is prepared on the surface of described active layer successively evaporation;
On described electron buffer layer surface, evaporation prepares metal penetration layer, and the material of described metal penetration layer is aluminium, silver, gold or platinum, and the thickness of described metal penetration layer is 5nm ~ 20nm;
On described metal penetration layer surface, evaporation prepares metal oxide layer, and the material of described metal oxide layer is titanium dioxide, zinc oxide or vanadic oxide; And
On described metal oxide layer surface, evaporation prepares metal conducting layer, described metal penetration layer, metal oxide layer and metal conducting layer composition negative electrode, the material of described metal conducting layer is aluminium, silver, gold or platinum, and the thickness of described metal conducting layer is 200nm ~ 500nm.
7. the preparation method of solar cell device according to claim 6, is characterized in that: the thickness of described metal oxide layer is 50nm ~ 200nm.
8. the preparation method of solar cell device according to claim 6, the material of described Hole-injecting Buffer Layer for Improvement is the mixture of poly-3,4-dioxyethylene thiophene and polyphenyl sulfonate.
9. the preparation method of solar cell device according to claim 6, is characterized in that: the material of described electron buffer layer is cesium azide, lithium fluoride, lithium carbonate or cesium carbonate.
10. the preparation method of solar cell device according to claim 6, is characterized in that: poly-3-hexyl thiophene and described 6,6-phenyl-C described in described active layer
61the mass ratio of-methyl butyrate is 1:0.5 ~ 1:4.
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