CN101308790A - Method for removing dielectric layer on substrate and chemical mechanical polishing process - Google Patents
Method for removing dielectric layer on substrate and chemical mechanical polishing process Download PDFInfo
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- CN101308790A CN101308790A CNA200710102581XA CN200710102581A CN101308790A CN 101308790 A CN101308790 A CN 101308790A CN A200710102581X A CNA200710102581X A CN A200710102581XA CN 200710102581 A CN200710102581 A CN 200710102581A CN 101308790 A CN101308790 A CN 101308790A
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Abstract
A method to remove the insulating layer on a substrate and the corresponding chemical mechanical lapping technique are disclosed. The method includes the following steps: the insulating layer is processed with the first chemical and mechanical lapping treatment and then with the second chemical and mechanical lapping treatment; wherein the pH values of the grinding plasmas in the two chemical and mechanical lapping processes are equal and both are more than 7. A cleaning process is added between the first chemical and mechanical lapping process and the chemical and mechanical lapping process to remove special substance which could result in the generation of harmful particles.
Description
Technical field
The invention relates to a kind of technology of semiconductor element, and particularly relevant for a kind of method that removes suprabasil insulating barrier, and corresponding chemical mechanical milling tech.
Background technology
Along with the lasting microminiaturization of semiconductor element wire spoke, at a high speed, greater functionality, high element integrated level, low power consumption and cheaply the ULSI integrated circuit (IC) chip be able to a large amount of manufacturings.Yet microminiaturization will cause exposure depth of field reduction, and will be more harsh for the requirement of the flatness of wafer surface.Therefore, planarization (planarization) technology of wafer all is to rely on the cmp technology to reach " universe planarization " (global planarization) in the wafer at present.The cmp technology has unique anisotropic and removes character, except the planarization that can be used for wafer surface, also can be applicable to vertically to reach the making, the shallow trench isolation in the FEOL of the mosaic texture of horizontal metal intraconnections (interconnects) making, MEMS (micro electro mechanical system) planarization and flat-panel screens making etc. from (STI) structure fabrication and advanced device.
The CMP technology is a principle of utilizing mechanical force to grind, cooperates suitable slurry (slurry) reaction that is hydrolyzed of grinding, and just gives " polishing " in the surface of fluctuating with the general.Typical cmp technology is with to be ground of wafer grinding pad (polishing pad) the subtend configuration with rotation, and the slurry that grinds that contains abrasive grains (abrasive) and chemical assistant is provided on grinding pad.When the part of wafer surface protrusion contacted with grinding pad, the chemical assistant that grinds in the slurry can make the contact site produce hydrolysis, and the mechanical lapping that cooperates wafer to assist by abrasive grains on grinding pad again removes and the contacted projection of grinding pad.Effect repeatedly by above-mentioned chemical reaction and mechanical lapping can form smooth surface.
Also have a kind of technology that is referred to as fixed cmp at present, it is to utilize the grinding pad that is embedded with abrasive grains to grind.When grinding, the abrasive grains that is embedded in the grinding pad can discharge, the mechanical lapping of auxiliary wafer.
Usually, the grinding rate of free-standing cmp is fast, makes grinding charge produce the phenomenon of depression easily in process of lapping.Though fixed cmp can be avoided the phenomenon that caves in,, therefore use seldom separately because grinding rate is lower.
At present, have free-standing cmp and fixed cmp are used in combination, remove the technology of the insulating barrier on the wafer, it utilizes the SiLECT6000 high selectivity to grind the free-standing chemical mechanical milling tech of slurry (HSS) earlier, to remove most insulating barrier on the wafer fast, afterwards, carry out fine grinding with the fixed cmp of SWR521 again.Can avoid the problem that caves in this way, and the situation of scratch (mircoscratch) is also rarely found.Yet HSS grinds grinding of slurry and removes rate and be changed to non-linearly, and its process window width is also very narrow.
Another kind of mode then is advanced the enforcement with silica (SiO
2) type grinds the free-standing chemical mechanical milling tech of slurry, to remove most insulating barrier on the wafer fast, afterwards, again to use CeO
2The fixed chemical mechanical milling tech of abrasive grains carries out fine grinding.Though this kind mode can increase the process window width, can cause serious scratch, its reason is as follows.In fixed chemical mechanical milling tech, by free-standing chemical mechanical milling tech before the surface of residual silica abrasive grains can hydrolysis generation-SiOH, generation-SiO again dissociates
-With H
+And CeO
2The surface of abrasive grains then can hydrolysis generation-CeOH, is dissociated into-Ce again
+With OH
-Because-Ce
+With-SiO
-Can produce the lewis acid alkali reaction, so can produce big Ce
xSiO
yParticulate, its reaction mechanism diagram is as follows.This Ce
xSiO
yThe surface of the easy scratch wafer of particulate.
Summary of the invention
The invention provides a kind of method that removes suprabasil insulating barrier, it can increase the width of process window.
The present invention provides a kind of method that removes suprabasil insulating barrier again, and it can reduce the situation of substrate scratch.
The present invention more provides a kind of chemical mechanical milling tech, the situation that it can increase the width of process window and reduce the substrate scratch.
The present invention proposes a kind of method that removes suprabasil insulating barrier.The method comprises in regular turn carries out first and second chemical mechanical milling tech to this insulating barrier, and wherein first chemical mechanical milling tech is employed grinds that slurry equates with the employed pH value of grinding slurry of second chemical mechanical milling tech and greater than 7.Also comprise the removing step between the one the second chemical mechanical milling techs, to remove the predetermined substance that can cause particulates emission to produce.
Described according to the embodiment of the invention, in the above-mentioned method that removes suprabasil insulating barrier, to remove step and can in abrasive disk, carry out, this abrasive disk is identical with the employed abrasive disk of first chemical mechanical milling tech, or different.
Described according to the embodiment of the invention, in the above-mentioned method that removes suprabasil insulating barrier, first chemical mechanical milling tech for example comprises the free-standing chemical mechanical milling tech, and second chemical mechanical milling tech comprises fixed chemical mechanical milling tech simultaneously.This moment, above-mentioned predetermined substance may be employed first abrasive grains of first chemical mechanical milling tech, and this first abrasive grains can form above-mentioned particulates emission with the employed second abrasive grains effect of second chemical mechanical milling tech.For example, the material of first abrasive grains comprises silica, and the material of second abrasive grains comprises cerium oxide, and two kinds of abrasive grains effects and the particulates emission that forms is Ce
xSiO
yParticulate.
Described according to the embodiment of the invention, in the above-mentioned method that removes suprabasil insulating barrier, when the predetermined substance that causes particulates emission to produce is first abrasive grains, removes step and comprise with the deionized water rinsing substrate, and polishing (buff) simultaneously.This removes step for example is to carry out in abrasive disk, and this abrasive disk is identical or different with the employed abrasive disk of first chemical mechanical milling tech, and the latter for example is the abrasive disk with burnishing pad.
Described according to the embodiment of the invention, in the above-mentioned method that removes suprabasil insulating barrier, when the predetermined substance that causes particulates emission to produce is first abrasive grains, removing step for example is again with the chemical treatments substrate, make surface of insulating layer have identical electrical electric charge, and polish substrate simultaneously with a plurality of first abrasive grains attached to it.This removes step for example is to carry out in abrasive disk, and this abrasive disk and the employed abrasive disk of first chemical mechanical milling tech are different, and for example are the abrasive disks with burnishing pad.In addition, above-mentioned chemicals comprises ammoniacal liquor, or contains the solution of ammoniacal liquor.
Described according to the embodiment of the invention, in the above-mentioned method that removes suprabasil insulating barrier, when the predetermined substance that causes particulates emission to produce is first abrasive grains, remove step and for example be again with chemicals remove partial insulative layer with attached to a plurality of abrasive grains on the insulating barrier.In one embodiment, this removing step is to carry out in chemical tank.In another embodiment, this removing step also comprises polishes substrate simultaneously, and remove step this moment for example is to carry out in abrasive disk, and this abrasive disk is different with the user of first chemical mechanical milling tech institute, for example is the abrasive disk with burnishing pad.In addition, above-mentioned chemicals for example comprises acid solution, and it comprises diluent hydrofluoric acid solution, or contains the solution of hydrofluoric acid.
Described according to the embodiment of the invention, in the above-mentioned method that removes suprabasil insulating barrier, when first chemical mechanical milling tech comprised that the free-standing chemical mechanical milling tech and second chemical mechanical milling tech comprise fixed chemical mechanical milling tech, this free-standing chemical mechanical milling tech, fixed chemical mechanical milling tech and removing step can all be carried out in same board.
Described according to the embodiment of the invention, in the above-mentioned method that removes suprabasil insulating barrier, first and second chemical mechanical milling tech can comprise free-standing chemical mechanical milling tech or fixed chemical mechanical milling tech separately.
Described according to the embodiment of the invention, in the above-mentioned method that removes suprabasil insulating barrier, insulating barrier can be in order to form the insulating barrier of fleet plough groove isolation structure.
Described according to the embodiment of the invention, in the above-mentioned method that removes suprabasil insulating barrier, insulating barrier can be dielectric layer.
Described according to the embodiment of the invention, the above-mentioned method that removes suprabasil insulating barrier also is included in second chemical mechanical milling tech and carries out deionized water rinsing polishing step afterwards, to remove the residue on the insulating barrier.
The present invention proposes a kind of chemical mechanical milling tech, be applicable to and grind suprabasil subject matter, be included in and carry out the first cmp step on first abrasive disk, then, on second abrasive disk, remove step, to remove the predetermined substance that can cause particulates emission to produce in the substrate, afterwards, carry out the second cmp step on the 3rd abrasive disk, wherein this first abrasive disk is employed grinds that slurry equates with the employed pH value of grinding slurry of the 3rd abrasive disk and greater than 7.
Described according to the embodiment of the invention, in the above-mentioned chemical mechanical milling tech, second abrasive disk is one to have the abrasive disk of burnishing pad.
Described according to the embodiment of the invention, in the above-mentioned chemical mechanical milling tech, remove step and comprise, and polish the subject matter of substrate simultaneously with the deionized water rinsing substrate.
Described according to the embodiment of the invention, in the above-mentioned chemical mechanical milling tech, remove step and comprise, and polish the subject matter of substrate simultaneously with the chemical treatments substrate.
Described according to the embodiment of the invention, in the above-mentioned chemical mechanical milling tech, chemicals comprises ammoniacal liquor, or contains the solution of ammoniacal liquor.
Described according to the embodiment of the invention, in the above-mentioned chemical mechanical milling tech, chemicals comprises acid solution.
Described according to the embodiment of the invention, in the above-mentioned chemical mechanical milling tech, acid solution comprises diluent hydrofluoric acid solution, or contains the solution of hydrofluoric acid.
Described according to the embodiment of the invention, in the above-mentioned chemical mechanical milling tech, the first cmp step and the second cmp step comprise free-standing cmp step or fixed cmp step separately.
Described according to the embodiment of the invention, in the above-mentioned chemical mechanical milling tech, in the first cmp step, use first abrasive grains; Use second abrasive grains in the second cmp step, wherein the material of first abrasive grains comprises silica; The material of second abrasive grains comprises cerium oxide; And particulates emission is Ce
xSiO
yParticulate.
The method that removes suprabasil insulating barrier of the present invention, it can increase the width of process window.
The method that removes suprabasil insulating barrier of the present invention, it can reduce the situation of substrate scratch.
For allowing above-mentioned and other purposes, feature and advantage of the present invention become apparent, preferred embodiment cited below particularly also cooperates appended graphicly, is described in detail as follows.
Description of drawings
Fig. 1 is a kind of method flow diagram that removes suprabasil insulating barrier that illustrates according to the embodiment of the invention;
Fig. 2 A to 2F is the flow process profile of the manufacture method of a kind of fleet plough groove isolation structure of illustrating according to one embodiment of the invention;
Fig. 3 A to 3D is the flow process profile of flatening process of the dielectric layer of a kind of semiconductor element of illustrating according to the embodiment of the invention.
The main element symbol description
10～16: step
200,300: substrate
202: pad oxide
204,204a: mask layer
206: groove
208,208a, 208b: insulating barrier
210: abrasive grains
302,302a, 302b: dielectric layer
Embodiment
Fig. 1 is a kind of method flow diagram that removes suprabasil insulating barrier that illustrates according to the embodiment of the invention.
Please refer to Fig. 1, the method that removes suprabasil insulating barrier of present embodiment is to carry out a free-standing chemical mechanical milling tech earlier, with the insulating barrier (step 10) of quick grinding base upper portion branch.In an example, the employed slurry that grinds of this chemical mechanical milling tech grinds slurry for type silicon oxide, for example is the SS-25 type that Cabot company is produced, and its pH value is greater than 7.Because silica (SiO
2) abrasive grains surface meeting hydrolysis generation-SiOH, be dissociated into again-SiO
-With H
+, and-SiO
-Meeting and CeO
2The abrasive grains surface-Ce
+Produce the lewis acid alkali reaction and cause Ce
xSiO
yThe formation of particulate is therefore if step 10 is used SiO
2Abrasive grains and directly use CeO thereafter
2Another grinding technics of abrasive grains then remains in the SiO on the insulating barrier
2Abrasive grains can cause producing Ce in the next grinding technics
xSiO
yParticulate, the surface of its easy scratch wafer.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step 10 is carried out with first abrasive disk.
Then, carry out step 12.The removing step that step 12 is carried out can be carried out in the board identical with step 10, can cause the material of particulates emission generation with removal.In one embodiment, the employed abrasive grains of step 10 is the silica abrasive grains, and this material of removing that step institute desire removes promptly be on the surface of insulating layer residual silica abrasive grains.
In one embodiment, remove step 12 and be deionized water rinsing substrate, and polish substrate simultaneously with high pressure, with remove by mechanical force on the surface of insulating layer residual abrasive grains.This removing step 12 can be carried out in order to the employed abrasive disk of the chemical mechanical milling tech that carries out step 10 when participating in the cintest, or carries out in another abrasive disk.When removing step 12 is when carrying out in another abrasive disk, can arrange in pairs or groups and use burnishing pad (buffpad) to grind.
In another embodiment, removing step 12 is the Zeta potentials (zeta potential) that change substrate surface with a chemicals, make surface of insulating layer have identical electrical electric charge with abrasive grains attached to it, and the generation mutual repulsion effect, and simultaneously substrate is polished, abrasive grains is removed with mechanical force.When insulating barrier is silicon oxide layer and step 10 when using the silica abrasive grains, removing the employed chemicals of step 12 for example is alkali, so that the surface of insulating layer of silicon oxide is all electronegative with abrasive grains in the substrate, and abrasive grains is repelled the surface of disengaging insulating barrier.Remove the employed chemicals of step 12 and comprise alkaline solution such as ammoniacal liquor, or contain the solution (for example be the solution that contains ammoniacal liquor and hydrogen peroxide, as the RCA solution that RCA Corp. produces, its concentration is that 20wt% is following) of ammoniacal liquor.It is to carry out in being different from the abrasive disk of step 10 that this kind removed step 12, and it can use burnishing pad to polish simultaneously.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step 12 is carried out with second abrasive disk.
In another embodiment, removing step 12 is to remove partial insulating layer and abrasive grains attached to it with a chemicals.When insulating barrier was silica, removing the employed chemicals of step 12 for example was an acid solution, with remove suprabasil partial insulative layer and on abrasive grains.Remove the employed acid solution of step 12 and comprise hydrofluoric acid solution, or contain the solution of hydrofluoric acid, its concentration is 0.02-1wt%.In an example, the mode of carrying out of removing step 12 is that substrate is soaked in the chemical tank that chemicals is housed.In another example, remove step 12 except removing the partial insulative layer with chemicals, also simultaneously substrate is polished, abrasive grains is removed with mechanical force.It is to carry out in being different from the abrasive disk of step 10 that this kind removed step 12, and it can use burnishing pad to polish.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step 12 is carried out with second abrasive disk.
Afterwards, carry out step 14, it can carry out a fixed chemical mechanical milling tech in same board, with the fine grinding insulating barrier.The employed pH value of grinding slurry of this fixed chemical mechanical milling tech is greater than 7, and equates with the employed pH value of grinding slurry of step 10.Fixed chemical mechanical milling tech is to use the grinding pad that is embedded with abrasive grains to carry out, and used abrasive grains for example is CeO
2Abrasive grains also may be that other and the used abrasive grains of step 10 are (as SiO
2The abrasive grains that can cause particulates emission to produce when abrasive grains) coexisting.Because previous removing step 12 removed the abrasive grains of last grinding technics, so can not produce Ce when carrying out step 14
xSiO
yParticulate and scratch substrate.It is to carry out in being different from the abrasive disk of step 10 that this kind removed step 14.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step 14 is carried out with the 3rd abrasive disk.
After carry out step 14, can carry out step 16 according to the abrasive disk quantity of actual needs and board.Step 16 is to carry out deionized water rinsing polishing (buffing) step, to remove the residue on the insulating barrier, for example is abrasive grains, grinds slurry or pollutant etc.Deionized water rinsing polishing step 16 is to carry out in being different from the abrasive disk of step 14, and it can use burnishing pad to polish simultaneously.
As mentioned above, the material of the insulating barrier of available method grinding of the present invention for example is a silica.The method of the embodiment of the invention can be applied to the manufacturing of fleet plough groove isolation structure.
Fig. 2 A to 2F is the flow process profile of the manufacture method of a kind of fleet plough groove isolation structure of illustrating according to one embodiment of the invention.
Please refer to Fig. 2 A, in substrate 200, form pad oxide 202 and mask layer 204.The formation method of pad oxide 202 for example is a thermal oxidation method; The material of mask layer 204 for example is a silicon nitride, and the formation method for example is a chemical vapour deposition technique.
Then, please refer to Fig. 2 B, patterned mask layer 204 and pad oxide 202, and in substrate 200, lose groove 206.Then, depositing insulating layer 208 in substrate 200, and its material for example is a silica, and the formation method for example is the plasma enhanced chemical vapor deposition method.The thickness of insulating barrier 208 for example is 6000 dusts.
Then, please refer to Fig. 2 C, (Fig. 1 step 10) is about 150 to 500 dusts so that stay the thickness of the insulating barrier 208a of mask layer 204 tops to carry out a free-standing chemical mechanical milling tech earlier.This chemical mechanical milling tech is employed to be ground slurry and can be type silicon oxide and grind slurry, for example is the SS-25 type that Cabot company is produced, and its pH value is greater than 7.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step is carried out with first abrasive disk.Carry out this free-standing chemical mechanical milling tech after, the surface of insulating barrier 208a can more residual abrasive grains 210.
Afterwards, please refer to Fig. 2 D, (Fig. 1 step 12), the meeting that is attached on the insulating barrier 208a with removal makes the material that produces particulates emission in the follow-up grinding technics, the employed abrasive grains of promptly last grinding technics to remove step.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step is carried out with second abrasive disk.When step 10 is used the silica abrasive grains, this remove step 12 desire removal person promptly be the silica abrasive grains that is attached on the insulating barrier 208a.Removing step 12 can or use chemicals (and cooperating polishing operation) to implement with the deionized water rinsing substrate of high pressure and polishing simultaneously.
Employed chemicals can be an alkaline solution, to change the Zeta potential (Zeta potential) on insulating barrier 208a surface, makes insulating barrier 208a abrasive grains 210 surperficial and attached to it have identical electrical electric charge, and produces mutual repulsion effect.Alkaline solution for example is an ammoniacal liquor, or contains the solution (for example be the solution that contains ammoniacal liquor and hydrogen peroxide, as the RCA solution that RCA Corp. produces, its concentration is that 20wt% is following) of ammoniacal liquor.
Employed chemicals for example can be again an acid solution, with remove partial insulative layer 208a with and on abrasive grains 210.Acid solution for example is a hydrofluoric acid solution, or contains the solution of hydrofluoric acid, and its concentration for example is 0.02-1wt%.
Thereafter, please refer to Fig. 2 E, (Fig. 1 step 14), employed pH value of grinding slurry be greater than 7, and equate with the employed pH value of grinding slurry of previous free-standing chemical mechanical milling tech to carry out a fixed chemical mechanical milling tech.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step is carried out with the 3rd abrasive disk.Fixed chemical mechanical milling tech can use and be embedded with CeO
2The grinding pad of abrasive grains exposes out until mask layer 204, and wherein the thickness loss of mask layer 204 for example is about 50 dusts, and stays mask layer 204a and insulating barrier 208b.Though CeO
2The abrasive grains surface-Ce
+Can with the used silica abrasive grains surface of last grinding technics-SiO
-Bond, and cause the Ce of easy scratch substrate surface
xSiO
yParticulate forms, but has removed residual silica abrasive grains 210 because of previous removing step 12, so can significantly reduce Ce
xSiO
yThe scratch situation that particulate causes.
Afterwards, please refer to Fig. 2 F, remove mask layer 204 and pad oxide 202, it for example is to reach with first-class tropism's etch process.
In addition, can carry out the step 16 of Fig. 1 again, with the deionized water rinsing polishing, to remove the residue on the insulating barrier 208b according to the needs of reality.
Through experiment confirm, the method for present embodiment can reduce by 86% scratch in addition.
The method of the embodiment of the invention also can be used for the grinding of dielectric layer except the manufacturing that can be applied to fleet plough groove isolation structure.
Fig. 3 A to 3D is the flow process profile of flatening process of the dielectric layer of a kind of semiconductor element of illustrating according to the embodiment of the invention.
Please refer to Fig. 3 A, formed dielectric layer 302 in the substrate 300.Dielectric layer 302 can be inner layer dielectric layer (ILD) or dielectric layer between metal layers (IMD) etc.Dielectric layer 302 has the surface that height rises and falls because of lower element, and its material for example is a silica, and the method that forms for example is a chemical vapour deposition technique.
Then, please refer to Fig. 3 B, (Fig. 1 step 10) to remove the dielectric layer 302 of part, descends the degree of the height fluctuating of the dielectric layer 302a that stays to carry out a free-standing chemical mechanical milling tech.The employed slurry that grinds of this free-standing chemical mechanical milling tech is for example for type silicon oxide grinds slurry, and as the SS-25 type that Cabot company is produced, its pH value is greater than 7.Use type silicon oxide grind slurry grinding technics after, the surface of dielectric layer 302a can more residual silica abrasive grains 310.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step is carried out with first abrasive disk.
Afterwards, please refer to Fig. 3 C, (Fig. 1 step 12) can make the material that produces particulates emission in the follow-up grinding technics, the employed abrasive grains of promptly last grinding technics to remove on the dielectric layer 302a to carry out a removing step.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step is carried out with second abrasive disk.When step 10 is used the silica abrasive grains, this remove step 12 desire removal person promptly be silica abrasive grains 310 residual on the dielectric layer 302a surface.Removing step 12 can and cooperate polishing operation or use chemicals (and cooperating polishing operation) to implement with the deionized water rinsing substrate of high pressure.
Employed chemicals can be an alkaline solution, to change the Zeta potential (Zeta potential) on dielectric layer 302a surface, make dielectric layer 302a surface with its on abrasive grains 310 have identical electrical electric charge, and generation mutual repulsion effect.Alkaline solution for example is an ammoniacal liquor, or contains below the solution (for example be the solution that contains ammoniacal liquor and hydrogen peroxide, as the RCA solution that RCA Corp. produces, its concentration is 20wt%) of ammoniacal liquor.
Employed chemicals for example can be again an acid solution, with remove suprabasil part dielectric layer 302a and on abrasive grains 310.This acid solution for example is a hydrofluoric acid solution, or contains the solution of hydrofluoric acid, and its concentration is 0.02-1wt%.
Thereafter, please refer to Fig. 3 D, (Fig. 1 step 14), employed pH value of grinding slurry be greater than 7, and equate with the employed pH value of grinding slurry of free-standing chemical mechanical milling tech to carry out a fixed chemical mechanical milling tech.In one embodiment, work-table of chemicomechanical grinding mill has three abrasive disks, and this step system carries out with the 3rd abrasive disk.Fixed chemical mechanical milling tech can use and be embedded with CeO
2The grinding pad of abrasive grains carries out, so that the further planarization of dielectric layer 302a, stays the dielectric layer 302b of planarization.Because the previous step 12 of removing has been removed silica abrasive grains 310, so can significantly reduce Ce
xSiO
yThe scratch that particulate caused.
Can carry out the step 16 of Fig. 1 again according to the needs of reality, with the deionized water rinsing polishing, to remove the residue on the dielectric layer 302b.
Though in above embodiment, be to illustrate to carry out the situation that the free-standing chemical mechanical milling tech carries out fixed chemical mechanical milling tech more earlier.Yet, the present invention also can be applied to carry out the situation that fixed chemical mechanical milling tech carries out the free-standing chemical mechanical milling tech more earlier, or the hydrolysate of any two free-standing chemical mechanical milling techs, any two fixed chemical mechanical milling techs or any other identical or different its employed different abrasive grains of chemical mechanical milling tech can react generation particulates emission person.
In addition, though producing the material of particulates emission in the grinding technics that carries out after can making among the above embodiment is the employed abrasive grains of grinding technics of carrying out earlier, but the material that produces particulates emission in the grinding technics that the present invention carries out after also can be applicable to make is the situation of other materials beyond the abrasive grains that grinding technics used or produced of carrying out earlier, as long as optionally adjust aforementioned removing step.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (33)
1. method that removes suprabasil insulating barrier, comprise this insulating barrier is carried out first chemical mechanical milling tech and the second follow-up chemical mechanical milling tech, this first chemical mechanical milling tech is employed to grind that slurry equates with the employed pH value of grinding slurry of this second chemical mechanical milling tech and greater than 7, and wherein
Between this first and second chemical mechanical milling tech, comprise the removing step, to remove the predetermined substance that can cause particulates emission to produce.
2. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this removing step is carried out in abrasive disk, and this abrasive disk is identical with the employed abrasive disk of this first chemical mechanical milling tech, or different.
3. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this first chemical mechanical milling tech comprises the free-standing chemical mechanical milling tech, and this second chemical mechanical milling tech comprises fixed chemical mechanical milling tech.
4. the method that removes suprabasil insulating barrier as claimed in claim 3; wherein this predetermined substance is employed first abrasive grains of this first chemical mechanical milling tech; this first abrasive grains can with the employed second abrasive grains effect of this second chemical mechanical milling tech, and form this particulates emission.
5. the method that removes suprabasil insulating barrier as claimed in claim 4, wherein the material of this first abrasive grains comprises silica, and the material of this second abrasive grains comprises cerium oxide, and this particulates emission of dawn is Ce
xSiO
yParticulate.
6. the method that removes suprabasil insulating barrier as claimed in claim 4, wherein this removing step comprises with this substrate of deionized water rinsing, and polishes this substrate simultaneously.
7. the method that removes suprabasil insulating barrier as claimed in claim 6, wherein this removing step is carried out in abrasive disk, and this abrasive disk is identical with the employed abrasive disk phase of this first chemical mechanical milling tech XOR.
8. the method that removes suprabasil insulating barrier as claimed in claim 7, wherein this removing step is carried out in having the abrasive disk of burnishing pad, and this abrasive disk and this user of first chemical mechanical milling tech institute are different.
9. the method that removes suprabasil insulating barrier as claimed in claim 4, wherein this removing step comprises: with this substrate of chemical treatments, make this insulating barrier and have identical electrical electric charge, and polish this substrate simultaneously attached to a plurality of first abrasive grains on this insulating barrier.
10. the method that removes suprabasil insulating barrier as claimed in claim 9, wherein this removing step is carried out in abrasive disk, and this abrasive disk and the employed abrasive disk of this first chemical mechanical milling tech are different.
11. the method that removes suprabasil insulating barrier as claimed in claim 10, wherein this removing step is carried out in having the abrasive disk of burnishing pad.
12. the method that removes suprabasil insulating barrier as claimed in claim 9, wherein this chemicals comprises ammoniacal liquor, or contains the solution of ammoniacal liquor.
13. the method that removes suprabasil insulating barrier as claimed in claim 4, wherein this removing step comprise with chemicals remove the part this insulating barrier with attached to a plurality of first abrasive grains on this insulating barrier.
14. the method that removes suprabasil insulating barrier as claimed in claim 13, wherein this removing step is carried out in chemical tank.
15. the method that removes suprabasil insulating barrier as claimed in claim 13, wherein this removing step also comprises and polishes this substrate simultaneously.
16. the method that removes suprabasil insulating barrier as claimed in claim 15, wherein this removing step is carried out in abrasive disk, and this abrasive disk is different with the employed abrasive disk of this first chemical mechanical milling tech.
17. the method that removes suprabasil insulating barrier as claimed in claim 16, wherein this removing step is carried out in having the abrasive disk of burnishing pad.
18. the method that removes suprabasil insulating barrier as claimed in claim 13, wherein this chemicals comprises acid solution.
19. the method that removes suprabasil insulating barrier as claimed in claim 18, wherein this acid solution comprises diluent hydrofluoric acid solution, or contains the solution of hydrofluoric acid.
20. the method that removes suprabasil insulating barrier as claimed in claim 3, wherein this free-standing chemical mechanical milling tech, this fixed chemical mechanical milling tech and this removing step are carried out in same board.
21. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this first chemical mechanical milling tech and this second chemical mechanical milling tech comprise free-standing chemical mechanical milling tech or fixed chemical mechanical milling tech separately.
22. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this insulating barrier is in order to form the insulating barrier of fleet plough groove isolation structure.
23. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this insulating barrier is a dielectric layer.
24. the method that removes suprabasil insulating barrier as claimed in claim 1 also is included in this second chemical mechanical milling tech and carries out deionized water rinsing polishing step afterwards, to remove the residue on this insulating barrier.
25. a chemical mechanical milling tech is applicable to and grinds suprabasil subject matter, comprising:
On first abrasive disk, carry out the first cmp step;
On second abrasive disk, remove step, to remove the predetermined substance that can cause particulates emission to produce in this substrate; And
After this removes step, on the 3rd abrasive disk, carry out the second cmp step;
Wherein this first abrasive disk is employed grinds that slurry equates with the employed pH value of grinding slurry of the 3rd abrasive disk and greater than 7.
26. chemical mechanical milling tech as claimed in claim 25, wherein this second abrasive disk is the abrasive disk with burnishing pad.
27. chemical mechanical milling tech as claimed in claim 26, wherein this removing step comprises with this substrate of deionized water rinsing, and polishes this subject matter of this substrate simultaneously.
28. chemical mechanical milling tech as claimed in claim 26, wherein this removing step comprises with this substrate of chemical treatments, and polishes this subject matter of this substrate simultaneously.
29. chemical mechanical milling tech as claimed in claim 28, wherein this chemicals comprises ammoniacal liquor, or contains the solution of ammoniacal liquor.
30. chemical mechanical milling tech as claimed in claim 28, wherein this chemicals comprises acid solution.
31. chemical mechanical milling tech as claimed in claim 30, wherein this acid solution comprises diluent hydrofluoric acid solution, or contains the solution of hydrofluoric acid.
32. chemical mechanical milling tech as claimed in claim 26, wherein this first cmp step and this second cmp step comprise free-standing cmp step or fixed cmp step separately.
33. chemical mechanical milling tech as claimed in claim 26 wherein uses first abrasive grains in this first cmp step; Use second abrasive grains in this second cmp step, wherein the material of this first abrasive grains comprises silica; The material of this second abrasive grains comprises cerium oxide; And this particulates emission is Ce
xSiO
yParticulate.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA200710102581XA CN101308790A (en) | 2007-05-16 | 2007-05-16 | Method for removing dielectric layer on substrate and chemical mechanical polishing process |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA200710102581XA CN101308790A (en) | 2007-05-16 | 2007-05-16 | Method for removing dielectric layer on substrate and chemical mechanical polishing process |
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| CN101308790A true CN101308790A (en) | 2008-11-19 |
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|---|---|---|---|
| CNA200710102581XA Pending CN101308790A (en) | 2007-05-16 | 2007-05-16 | Method for removing dielectric layer on substrate and chemical mechanical polishing process |
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| CN (1) | CN101308790A (en) |
Cited By (9)
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| CN101934497A (en) * | 2010-08-11 | 2011-01-05 | 中国电子科技集团公司第四十五研究所 | Single-sided chemically mechanical polishing method and device of silicon chip |
| CN102371534A (en) * | 2010-08-24 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method for surface of wafer |
| CN102554748A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(北京)有限公司 | Polishing method |
| CN102623327A (en) * | 2011-01-31 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical lapping method |
| CN103035504A (en) * | 2011-10-09 | 2013-04-10 | 中芯国际集成电路制造(北京)有限公司 | Chemical machinery polishing method and chemical machinery polishing device |
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| CN102371534A (en) * | 2010-08-24 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method for surface of wafer |
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| CN105817991A (en) * | 2015-01-06 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method |
| CN107369618A (en) * | 2017-07-07 | 2017-11-21 | 上海华虹宏力半导体制造有限公司 | The flattening method of wafer |
| CN107369618B (en) * | 2017-07-07 | 2020-02-21 | 上海华虹宏力半导体制造有限公司 | Method for flattening wafer |
| CN109037033A (en) * | 2018-07-17 | 2018-12-18 | 武汉新芯集成电路制造有限公司 | A kind of wafer thining method |
| CN110957217A (en) * | 2018-09-27 | 2020-04-03 | 台湾积体电路制造股份有限公司 | Semiconductor device and method for manufacturing polishing slurry for chemical mechanical polishing |
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