CN110875213A - Wafer processing equipment, wafer processing method and application thereof - Google Patents

Wafer processing equipment, wafer processing method and application thereof Download PDF

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Publication number
CN110875213A
CN110875213A CN201811025346.1A CN201811025346A CN110875213A CN 110875213 A CN110875213 A CN 110875213A CN 201811025346 A CN201811025346 A CN 201811025346A CN 110875213 A CN110875213 A CN 110875213A
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China
Prior art keywords
wafer
module
edge area
wafer processing
back grinding
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CN201811025346.1A
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Chinese (zh)
Inventor
吴明锋
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to CN201811025346.1A priority Critical patent/CN110875213A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention provides a wafer processing device, a wafer processing method and application thereof, wherein the wafer processing device comprises a workbench and a back grinding module; the workbench is used for adsorbing a wafer, and the wafer is provided with a wafer back side edge area protruding out of the workbench; the back grinding module is positioned below the wafer and is in contact with the edge area of the back of the wafer for grinding the edge area of the back of the wafer. The back grinding module is used for removing pollutants on the back of the wafer, so that the cleanliness and the flatness of the back of the wafer are improved, the pollution of the pollutants on equipment by the back of the wafer and the unevenness of the back of the wafer caused by the pollutants are avoided, the wafer falls off in the transmission process and the equipment alarms in the process of manufacturing process are avoided, meanwhile, the maintenance time of the equipment is reduced, and the utilization rate of the equipment is improved; the risk that pollutants on the back of the wafer are broken and fall off in the subsequent process of the wafer is reduced, and the product yield is improved.

Description

Wafer processing equipment, wafer processing method and application thereof
Technical Field
The invention belongs to the field of semiconductor integrated circuits, and relates to wafer processing equipment, a wafer processing method and application thereof.
Background
In the field of semiconductor integrated circuits, circuit patterns in semiconductor integrated circuits are usually prepared by using a photolithography process, which has been regarded as the most critical step in the manufacture of integrated circuits, and the circuit patterns need to be used for many times in the whole process, which has a significant influence on the quality of products.
The photolithography process is a complex process, which essentially copies a circuit pattern in the form of a pattern on a semiconductor substrate to be etched or ion-implanted later, and generally includes the following steps: firstly, a medium thin film layer (a conductor thin film or a semiconductor thin film) is formed on a wafer, then photoresist Coating equipment is used for Coating (Coating) photoresist on the wafer, illumination is irradiated on the photoresist through a mask plate with a certain pattern to enable the photoresist to be exposed (exposed) to deteriorate, then Developing (Developing) is carried out on the photoresist by utilizing a Developing solution, so that the pattern in the mask plate is transferred to the photoresist to form the photoresist with a photoresist pattern, finally, the medium thin film layer is etched (Etch) under the protection of the photoresist, so that the photoresist pattern is transferred to the medium thin film layer, and the medium thin film layer is patterned to obtain a circuit pattern.
In a conventional semiconductor integrated circuit, a method for forming a dielectric thin film layer on a wafer includes Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD), and when the dielectric thin film layer is formed on an upper surface of the wafer by using the method, a contaminant (e.g., a dielectric thin film layer) is formed in an edge region of a back surface of the wafer, as shown in fig. 1, fig. 1 is a schematic structural diagram of a wafer in the prior art, wherein a contaminant 300 is formed in the edge region of the back surface of the wafer when a dielectric thin film layer 200 is formed on the upper surface of a wafer 100. Fig. 2 is a schematic diagram of a robot in the prior art carrying a wafer, wherein the wafer 100 is transferred by the robot 400 through a wafer contact 401. Fig. 3 is a schematic diagram illustrating a structure of a robot arm in the prior art that may retain contaminants after transferring a wafer, wherein the robot arm 400 retains a portion of the contaminants 300 on a wafer contact 401 after transferring the wafer 100. The contaminant 300 in the edge area of the back side of the wafer has the following disadvantages that 1) the contaminant 300 falls on the wafer contact part 401 of the robot 400 to contaminate the wafer contact part 401 during the process of transferring the wafer 100 by the robot 400, so that the contaminant 300 is further transferred to the next wafer 100, the contamination range of the wafer 100 is expanded, and the product quality is reduced; 2) the edge area of the back side of the wafer becomes uneven, and uneven stress may be applied to the wafer 100 during the transfer of the wafer 100 by the robot 400, which may cause the wafer 100 to fall and be broken during the transfer of the robot 400; 3) the mechanical arm 400 cannot normally transmit the wafer 100, so that frequent alarm of the equipment is caused, the maintenance time of the equipment is prolonged, the utilization rate of the equipment is reduced, and even the equipment is stopped; 4) during the subsequent processes (e.g., annealing) of the wafer 100, the contaminant 300 may crack and fall off, so that the contaminant 300 may splash or fall on the upper surface of the wafer 100 or the upper surfaces of other wafers 100 close to the upper surface of the wafer 100, which may cause defects of the subsequent products and affect the product quality.
Therefore, there is a need for a wafer processing apparatus, a wafer processing method and applications thereof, which can solve the above problems caused by the contamination of the edge area of the back side of the wafer.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention provides a wafer processing apparatus, a wafer processing method and applications thereof, which are used to solve a series of quality problems caused by the residual contaminants on the edge area of the back side of the wafer in the prior art.
In view of the above, the present invention provides a wafer processing apparatus, comprising:
the wafer is provided with a wafer back side edge area protruding out of the workbench;
the back grinding module is positioned below the wafer and is in contact with the edge area of the back of the wafer so as to grind the edge area of the back of the wafer.
Optionally, the back grinding module comprises N, wherein N is more than or equal to 2.
Optionally, the shape of the longitudinal section of the back grinding module includes one or a combination of a T shape, a column shape, an inverted trapezoid shape and an inverted 'earth' shape.
Optionally, the shape of the grinding surface of the back grinding module includes a circle, and the diameter of the back grinding module ranges from 1mm to 30 mm.
Optionally, the backgrinding module comprises Al2O3And a back grinding module.
Optionally, the back grinding module includes one or a combination of a rotary back grinding module and a fixed back grinding module.
Optionally, the workbench includes one of a rotating workbench and a fixed workbench.
Optionally, when the rotary worktable is adopted by the worktable, the rotary back grinding module is adopted by the back grinding module, and the rotation direction of the rotary back grinding module and the rotation direction of the wafer include one or a combination of opposite and same directions.
Optionally, the back grinding module further comprises a driving member for driving the back grinding module.
Optionally, the wafer processing equipment further includes a nozzle module, and the nozzle module is located below the wafer and used for spraying a cleaning solution to the edge area of the back side of the wafer.
Optionally, the spray head module comprises M nozzles, wherein M is more than or equal to 2.
Optionally, the flow rate of the cleaning solution ranges from 20ml/min to 150 ml/min.
Optionally, the wafer processing apparatus further includes a collecting tank, the collecting tank is used for collecting the cleaning solution, and a bottom of the collecting tank includes a liquid discharge channel.
Optionally, the wafer processing apparatus further includes a robot arm for transferring the wafer, and the robot arm includes a wafer contact portion for carrying the wafer.
The invention also provides a wafer processing method, which comprises the following steps:
s1: providing a wafer;
s2: grinding the back edge area of the wafer by using wafer processing equipment, wherein the wafer processing equipment comprises a workbench and a back grinding module, the workbench is used for adsorbing the wafer, and the back edge area of the wafer protrudes out of the workbench; the back grinding module is positioned below the wafer and is in contact with the back edge area of the wafer so as to grind the back edge area of the wafer.
Optionally, the shape of the grinding surface of the back grinding module includes a circle, and the diameter of the back grinding module ranges from 1mm to 30 mm.
Optionally, the grinding range of the back grinding module along the radial direction of the wafer includes 1mm to 100 mm.
Optionally, the backgrinding module comprises Al2O3And a back grinding module.
Optionally, in step S2, the wafer processing apparatus further includes a nozzle module, where the nozzle module is located below the wafer and is configured to spray a cleaning solution to the edge area of the back side of the wafer.
Optionally, the back grinding module grinds the edge area of the back of the wafer, and the nozzle module is used for cleaning the edge area of the back of the wafer, and the spraying area of the cleaning solution covers the back grinding module.
Optionally, the flow rate of the cleaning solution ranges from 20ml/min to 150 ml/min.
The invention also provides a preparation method of the photoresist pattern layer, which comprises the following steps:
s1-1: providing a wafer;
s2-1: grinding the back edge area of the wafer by using wafer processing equipment, wherein the wafer processing equipment comprises a workbench and a back grinding module, the workbench is used for adsorbing the wafer, and the back edge area of the wafer protrudes out of the workbench; the back grinding module is positioned below the wafer and is in contact with the back edge area of the wafer so as to grind the back edge area of the wafer;
s3-1: and coating photoresist on the upper surface of the wafer, and carrying out photoetching and developing to prepare the photoresist pattern layer.
Optionally, the shape of the grinding surface of the back grinding module includes a circle, and the diameter of the back grinding module ranges from 1mm to 30 mm.
Optionally, the grinding range of the back grinding module along the radial direction of the wafer includes 1mm to 100 mm.
Optionally, the backgrinding module comprises Al2O3And a back grinding module.
Optionally, the wafer processing apparatus in step S2-1 further includes a nozzle module, where the nozzle module is located below the wafer and is configured to spray a cleaning solution to the edge area of the back side of the wafer.
Optionally, the back grinding module grinds the edge area of the back of the wafer, and the nozzle module is used for cleaning the edge area of the back of the wafer, and the spraying area of the cleaning solution covers the back grinding module.
Optionally, the step of cleaning the edge region of the back side of the wafer by using the showerhead module is further included after the step S2-1 and before the step S3-1.
Optionally, the flow rate of the cleaning solution ranges from 20ml/min to 150 ml/min.
According to the wafer processing equipment, the wafer processing method and the application thereof, the back grinding module in the wafer processing equipment is used for grinding the edge area of the back of the wafer, so that pollutants in the edge area of the back of the wafer can be removed, and the cleanliness and the flatness of the edge area of the back of the wafer are improved; furthermore, the wafer processing equipment is also provided with a spray head module which is used for spraying cleaning liquid to the edge area of the back surface of the wafer so as to effectively remove the abraded pollutants, thereby further improving the cleanliness and the flatness of the edge area of the back surface of the wafer; the pollutants are prevented from falling on the wafer contact part of the mechanical arm, so that the wafer contact part is prevented from being polluted, the pollutants are prevented from being transferred onto the next wafer, the pollution range of the wafer is reduced, and the product quality is improved; the thickness of the edge area of the back of the wafer is uniform, the stress of the wafer is uniform, and the phenomena of falling and fragmentation of the wafer in the transmission process of a mechanical arm are avoided; the probability of frequent alarm of the equipment is reduced, the maintenance time of the equipment is reduced, and the utilization rate of the equipment is improved; the phenomena of cracking and falling of pollutants generated in the subsequent process (such as annealing) of the wafer are reduced, the defects of subsequent products are reduced, and the product quality is improved.
Drawings
Fig. 1 is a schematic structural diagram of a wafer in the prior art.
Fig. 2 is a schematic structural diagram of a robot arm in the prior art for carrying a wafer.
Fig. 3 is a schematic diagram illustrating a structure of a robot arm according to the prior art for transferring a wafer with residual contaminants.
Fig. 4 is a schematic structural diagram of the wafer processing apparatus according to the present invention.
Fig. 5 is a schematic structural diagram of a wafer according to the present invention.
FIG. 6 is a schematic cross-sectional view of a back grinding module according to the present invention.
FIG. 7 is a schematic cross-sectional view of a back grinding module according to another embodiment of the present invention.
FIG. 8 is a schematic view of a robot arm of the present invention carrying a wafer.
Fig. 9 is a process flow diagram of a wafer processing method according to the present invention.
FIG. 10 is a schematic process flow diagram of a method for forming a patterned photoresist layer according to the present invention.
Description of the element reference numerals
100. 110 wafer
200. 210 dielectric thin film layer
300. 310 contamination
400. 410 mechanical arm
401. 411 wafer contact
510 working table
610 back grinding module
611 annular groove
710 showerhead module
810 cleaning liquid
910 collecting tank
I wafer back edge area
L1 preset distance
L2 grinding distance
Contact distance of L3 wafer contact
Thickness of H1 backgrinding module
Diameter of D1 abrasive surface
S1-S2, S1-1-S3-1 steps
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 4 to 10. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
Fig. 4 is a schematic structural diagram of a wafer processing apparatus according to the present invention, and as shown in fig. 4, an embodiment of the present invention provides a wafer processing apparatus, which mainly includes a worktable 510 and a back grinding module 610.
Specifically, the worktable 510 includes one of a rotary worktable and a fixed worktable, the worktable 510 is configured to adsorb the wafer 110, and the worktable 510 exposes a wafer back edge area I having a preset distance L1 from the edge of the wafer 110, the preset distance L1 may include 1mm to 30mm, and may also set a required actual range according to actual needs. The upper surface of the wafer 110 may include a dielectric film layer 210, the dielectric film layer 210 includes one or a combination of a silicon oxide layer and a silicon nitride layer formed by PVD, CVD or Diffusion method, and a contaminant 310 (such as a dielectric film layer) remaining in the wafer back side edge region I of the wafer 110, as shown in fig. 5, which is a schematic structural diagram of the wafer in the present invention. The wafer 110 is arranged on the upper surface of the workbench 510, the upper surface of the workbench 510 can be provided with a plurality of uniformly distributed air holes or air grooves, and the wafer 110 is vacuum-adsorbed through the uniformly distributed air holes or air grooves, so that fragments caused by sliding of the wafer 110 are avoided. The back grinding module 610 is located below the wafer 110, a grinding surface of the back grinding module 610 contacts the wafer back edge region I, and a projection of a grinding distance L2 of the back grinding module 610 in the wafer back edge region I covers the preset distance L1, so as to grind the wafer back edge region I and remove the contaminants 310 located in the wafer back edge region I. Through the back grinding module 610, the contaminants 310 in the wafer back edge area I can be effectively removed, and the cleanliness and the flatness of the wafer back edge area I can be improved.
As a further embodiment of this embodiment, the wafer processing apparatus further includes a showerhead module 710, where the showerhead module 710 is located below the wafer 110, and the showerhead module 710 is used to spray a cleaning solution 810 to the wafer back side edge area I to clean the wafer back side edge area I. The contaminants 310 abraded by the back grinding module 610 can be further effectively removed by the showerhead module 710, thereby further improving the cleanliness and flatness of the wafer back edge region I.
As a further embodiment of this embodiment, the back grinding module 610 includes N, where N is greater than or equal to 2, and the N back grinding modules 610 are in a ring shape and are uniformly distributed.
Specifically, in this embodiment, only 1 of the back grinding modules 610 is included and located below the wafer back edge region I, in another embodiment, the number of the back grinding modules 610 may also be N, where N is greater than or equal to 2, the N back grinding modules 610 may form a circular shape with the same horizontal plane below the wafer back edge region I, and adjacent back grinding modules 610 have equal intervals therebetween, so as to improve the grinding effect on the wafer back edge region I.
As a further embodiment of this embodiment, the back grinding module 610 includes one or a combination of a rotary back grinding module and a stationary back grinding module.
Specifically, when the rotary table 510 is adopted, the wafer 110 adsorbed above the rotary table may rotate, so that the back grinding module 610 may adopt a fixed grinding module fixed in the wafer processing equipment, that is, the back grinding module 610 and the wafer back edge region I may be displaced. In this embodiment, the rotary table is adopted as the table 510, the rotary backgrinding module is adopted as the backgrinding module 610, and the range of the rotation angle of the rotary backgrinding module includes 0 ° to 360 °, preferably 360 °, so that the grinding surface of the backgrinding module 610 and the wafer back edge region I are sufficiently ground, and the durability of the backgrinding module 610 is prolonged. In another embodiment, one of the other groups formed by the combination of the rotating backgrinding module and the fixed grinding module can be used, and is not limited herein.
As a further example of this embodiment, when the rotary table is adopted as the table 510, the rotary back grinding module 610 adopts a rotary back grinding module, and the rotation direction of the rotary back grinding module and the rotation direction of the wafer 110 include one or a combination of opposite and same directions.
Specifically, when the rotary table 510 is adopted as the rotary table, and the rotation direction of the rotary backgrinding module is opposite to the rotation direction of the wafer 110, the grinding effect of the backgrinding module 610 can be enhanced, and the rotation speed of the rotary backgrinding module is preferably equal to the rotation speed of the wafer 110. When the rotation direction of the rotating backgrinding module is the same as the rotation direction of the wafer 110, the two rotation speeds are different, that is, the backgrinding module 610 and the wafer back edge region I are required to generate relative displacement. When the worktable 510 is a fixed worktable, that is, the wafer 110 above the worktable 510 does not rotate, at this time, the back grinding module 610 needs to be a back grinding module capable of revolving around the wafer back edge region I, so that the back grinding module 610 and the wafer back edge region I generate relative displacement. The specific operation and speed of the backgrinding module is not limited herein.
As a further embodiment of this embodiment, the back grinding module 610 further comprises a driving member for driving the back grinding module 610 to move and rotate.
Specifically, the driving member includes a driving motor, and in order to facilitate the operation of the back grinding module 610, the driving motor can adjust the specific position (including the height and horizontal position of the back grinding module 610) and the rotation speed of the back grinding module 610, so as to expand the application range of the back grinding module 610, and a person skilled in the art can select the type and operation mode of the driving member according to the actual process requirement, which is not limited herein.
As a further example of this embodiment, the topography of the abrasive side of the backgrinding module 610 includes a circle having a diameter D1 in the range of 1mm to 30 mm.
Specifically, in a range where the predetermined distance L1 extending from the edge of the wafer 110 to the center direction of the wafer 110 includes 1mm to 30mm, the grinding surface of the back grinding module 610 is a circle having a diameter D1 in a range of 1mm to 30mm, so that the grinding surface of the rotary back grinding module can effectively cover the wafer back edge region I having the predetermined distance L1, as a highly concentrated region of the contaminants 310. The polishing surface of the back side polishing module 610 may have other shapes defined by straight lines and curved lines, and is not limited herein.
As a further embodiment of this embodiment, the polishing range of the back side polishing module 610 along the radial direction of the wafer 110 includes 1mm to 100 mm.
Specifically, the driving motor may drive the back grinding module 610 to rotate, lift and move, so that the grinding range of the back grinding module 610 may be further expanded by the movement of the back grinding module 610, and the range of the grinding distance L2 includes 1mm to 100mm, so as to reduce the damage range to the wafer 110 while ensuring that the wafer back edge region I is ground, in this embodiment, the diameter D1 of the grinding surface of the back grinding module 610 is equal to the grinding distance L2, so as to reduce the process complexity.
As a further embodiment of this embodiment, the profile of the longitudinal section of the back grinding module 610 includes a "T" shaped structure as shown in fig. 6, the profile of the grinding surface includes one of the figures enclosed by straight lines and curved lines, which includes a circle with a diameter D1 in the range of 1mm to 30mm, the thickness H1 of the back grinding module 610 includes 0.5mm to 20mm, preferably 15mm, and the service life of the back grinding module 610 is prolonged while the equipment space occupied by the back grinding module 610 is reduced.
As a further example of this embodiment, the profile of the back-grinding module 610 in longitudinal section may also include an inverted "dirt" shape as shown in FIG. 7.
Specifically, referring to fig. 7, the back grinding module 610 includes an annular groove 611, the height of the opening of the annular groove 611 includes 0.6mm to 20mm, the depth of the annular groove 611 includes 0.2mm to 10mm, and the inverted "earth" shaped structure with the annular groove 611 is adopted, which is beneficial to enhancing the stability of the back grinding module 610, thereby improving the grinding effect of the back grinding module 610. The thickness H1 of the back grinding module 610 ranges from 0.5mm to 20mm, the profile of the ground surface of the back grinding module 610 includes a circle with a diameter D1 ranging from 1mm to 30mm, and preferably the edge of the ground surface protrudes beyond the edge of the wafer 110 to ensure grinding of the wafer back edge area I, and the profile of the upper surface of the back grinding module 610 further includes one of other figures, such as a rectangle, surrounded by straight lines and curves.
As a further example of this embodiment, the longitudinal cross-sectional profile of the back grinding module 610 may further include one of a column shape and an inverted trapezoid shape, and a combination of two or more of a "T" shape, a column shape, an inverted trapezoid shape, and an inverted "earth" shape.
As a further example of this embodiment, the backgrinding module 610 includes Al2O3Back grinding module using Al having high hardness2O3A back grinding module, which can enhance the durability of the back grinding module 610.
As a further embodiment of this embodiment, the nozzle module 710 includes M nozzles, where M ≧ 2, and M of the nozzles are uniformly distributed in a circular shape.
Specifically, the nozzle module 710 includes one of a rotary nozzle module and a fixed nozzle module, and the nozzle module 710 may spray the cleaning solution 810 while the back grinding module 610 grinds, or spray the cleaning solution 810 after the back grinding module 610 grinds, so as to remove the contaminants 310 generated by grinding of the back grinding module 610. The M nozzles are positioned below the wafer 110, and form an included angle of 90-180 degrees with the edge area I of the back of the wafer, so that the spraying area of the cleaning solution 810 can be enlarged. In this embodiment, it is preferable that the cleaning solution 810 is sprayed and the sprayed area of the cleaning solution 810 covers the back grinding module 610 while the back grinding module 610 grinds, so that the back edge area I of the wafer is effectively cleaned in time while the back grinding module 610 grinds, and the effect of removing the contaminants 310 is improved.
As a further example of this embodiment, the cleaning solution 810 includes one of OK73, PGMEA, PGME, and deionized water, and the flow rate of the cleaning solution 810 ranges from 20ml/min to 150 ml/min. In this embodiment, the cleaning solution 810 preferably uses cheap and pollution-free deionized water, and the flow rate is selected to be 50ml/min, so as to reduce the impact on the wafer 110 while ensuring the cleaning effect of the cleaning solution 810, thereby reducing the damage to the wafer 110.
As a further embodiment of this embodiment, the wafer processing apparatus further includes a collecting tank 910, the collecting tank 910 forms an open cavity surrounding the worktable 510, the back side grinding module 610 and the showerhead module 710, the collecting tank 910 is open beyond the upper surface of the wafer 110 for collecting the cleaning solution 810, and the bottom of the collecting tank 910 further includes a liquid discharge channel (not shown) for facilitating the draining and collecting of the cleaning solution 810.
As a further embodiment of the embodiment, the wafer processing apparatus may further include a robot 410 for transferring the wafer 110, the robot 410 includes a wafer contact portion 411 for carrying the wafer 110, and a contact distance L3 of the wafer contact portion 411 is not greater than the polishing distance L2, as shown in fig. 8, which is a schematic structural diagram of the robot carrying the wafer according to the present invention.
Specifically, the contact distance L3 of the wafer contact 411 is less than or equal to the grinding distance L2, so as to ensure that the contact area between the wafer contact 411 and the wafer 110 is in a clean area when the robot 410 transfers the wafer 110, thereby ensuring that the wafer contact 411 is not contaminated by the contaminants 310 during the subsequent transfer of the wafer 110. The ratio of the contact distance L3 to the polishing distance L2 is preferably in the range of 1/2 to 3/4, so as to ensure the stability of the wafer 110 carried by the wafer contact 411. The robot 410 at least includes 2 wafer contacts 411, in this embodiment, the number of the wafer contacts 411 is 3, and 3 wafer contacts 411 are in the same plane, so as to form a horizontal plane capable of bearing the wafer 110, and the ratio range of the contact distance L3 to the grinding distance L2 is preferably 1/2, so as to improve the stability of the wafer contacts 411 in bearing the wafer 110, in another embodiment, the number of the wafer contacts 411 may also be other numbers, such as 4, 6, etc., and the contacts 411 may further include contact grooves having an opening height equal to the thickness of the wafer back edge area I, so as to further enhance the stability of transferring the wafer 110, and the specific shape and distribution of the wafer contacts 411 are not limited herein.
The present invention also provides a wafer processing method, as shown in fig. 9, which is a schematic process flow diagram of the wafer processing method of the present invention, and includes the following steps:
s1: providing a wafer;
s2: grinding the back edge area of the wafer by using wafer processing equipment, wherein the wafer processing equipment comprises a workbench and a back grinding module, the workbench is used for adsorbing the wafer, and the back edge area of the wafer protrudes out of the workbench; the back grinding module is positioned below the wafer and is in contact with the back edge area of the wafer so as to grind the back edge area of the wafer.
As a further embodiment of this embodiment, the topography of the abrasive side of the backgrinding module comprises a circle having a diameter in the range of 1mm to 30 mm.
As a further embodiment of this embodiment, a polishing range of the back side polishing module along the wafer radial direction includes 1mm to 100 mm.
As a further embodiment of this embodiment, the backgrinding module comprises Al2O3And a back grinding module.
As a further embodiment of the embodiment, in step S2, the wafer processing apparatus further includes a nozzle module, where the nozzle module is located below the wafer and is used to spray a cleaning solution to the edge area of the back side of the wafer.
As a further embodiment of this embodiment, the back grinding module grinds the edge area of the back side of the wafer, and the nozzle module is used to clean the edge area of the back side of the wafer, and the spraying area of the cleaning solution covers the back grinding module.
As a further embodiment of this embodiment, the method further includes step S3, in which after the back grinding module grinds the edge area of the back side of the wafer, the edge area of the back side of the wafer is cleaned by using the showerhead module.
As a further example of this embodiment, the flow rate of the cleaning solution ranges from 20ml/min to 150 ml/min.
Specifically, the structure of the wafer processing apparatus is not described herein again.
The invention also provides a method for preparing a photoresist pattern layer by using the wafer processing equipment, as shown in fig. 10, which is a schematic process flow diagram of the method for preparing the photoresist pattern layer in the invention, and comprises the following steps:
s1-1: providing a wafer;
s2-1: grinding the back edge area of the wafer by using wafer processing equipment, wherein the wafer processing equipment comprises a workbench and a back grinding module, the workbench is used for adsorbing the wafer, and the back edge area of the wafer protrudes out of the workbench; the back grinding module is positioned below the wafer and is in contact with the back edge area of the wafer so as to grind the back edge area of the wafer;
s3-1: and coating photoresist on the upper surface of the wafer, and carrying out photoetching and developing to prepare the photoresist pattern layer.
Specifically, step S1-1 is performed first, where the upper surface of the wafer includes a dielectric film layer, and the dielectric film layer includes one or a combination of a silicon oxide layer and a silicon nitride layer formed by PVD, CVD or Diffusion method, and the contaminants remain in the back edge region of the wafer.
Next, step S2-1 is performed: and grinding the edge area of the back side of the wafer through the back grinding module in the wafer processing equipment so as to remove the pollutants.
As a further embodiment of the embodiment, the wafer processing apparatus in step S2-1 further includes a nozzle module, where the nozzle module is located below the wafer and is used to spray a cleaning solution to the edge area of the back side of the wafer.
As a further embodiment of this embodiment, the back grinding module grinds the edge area of the back side of the wafer, and the nozzle module is used to clean the edge area of the back side of the wafer, and the spraying area of the cleaning solution covers the back grinding module.
As a further embodiment of this embodiment, the showerhead module may also be used to clean the wafer backside edge region after step S2-1 and before step S3-1.
As a further embodiment of this embodiment, the cleaning solution used in the cleaning process includes one of OK73, PGMEA, PGME, and deionized water, and a flow rate of the cleaning solution ranges from 20ml/min to 150ml/min, in this embodiment, the cleaning solution uses cheap and pollution-free deionized water, and a flow rate of the cleaning solution is preferably 50ml/min, so as to reduce impact on the wafer and damage to the wafer while ensuring a cleaning effect of the cleaning solution.
Finally, step S3-1 is performed, specifically, step S3-1 includes the following steps:
s3-1-1: conveying the ground and cleaned wafer to a platform of photoresist coating equipment by using a mechanical arm to adsorb the wafer;
s3-1-2: forming photoresist which is uniformly coated on the upper surface of the wafer through the rotation of the platform;
s3-1-3: baking the wafer before exposure to dry and solidify the photoresist so as to enhance the adhesiveness of the photoresist and the wafer, thereby achieving a good effect in a subsequent developing process;
s3-1-4: exposing the photoresist layer by using a mask plate to form a patterned exposure pattern in the photoresist layer;
s3-1-5: baking the wafer after exposure to improve the quality of the pattern;
s3-1-6: and coating a developing solution on the upper surface of the wafer, and developing the patterned photoresist layer to prepare the photoresist pattern layer.
The robot arm includes a wafer contact portion for bearing the wafer, and a contact distance of the wafer contact portion is not greater than a grinding distance of the back grinding module, that is, a grinding range of the back grinding module along a radial direction of the wafer, so as to ensure that a range of a contact surface between the wafer contact portion and the wafer is within the grinding distance when the robot arm transmits the wafer, thereby ensuring that the wafer contact portion is not contaminated by the contaminant in a subsequent wafer transmission process, and a type of the developing solution is not limited here, and related structures related to the wafer processing equipment are not described here again.
In summary, according to the wafer processing apparatus, the wafer processing method and the application thereof of the present invention, the back grinding module in the wafer processing apparatus grinds the back edge area of the wafer, so as to remove the contaminants in the back edge area of the wafer, thereby improving the cleanliness and the flatness of the back edge area of the wafer; furthermore, the wafer processing equipment is also provided with a spray head module which is used for spraying cleaning liquid to the edge area of the back surface of the wafer so as to effectively remove the abraded pollutants, thereby further improving the cleanliness and the flatness of the edge area of the back surface of the wafer; the pollutants are prevented from falling on the wafer contact part of the mechanical arm, so that the wafer contact part is prevented from being polluted, the pollutants are prevented from being transferred onto the next wafer, the pollution range of the wafer is reduced, and the product quality is improved; the thickness of the edge area of the back of the wafer is uniform, the stress of the wafer is uniform, and the phenomena of falling and fragmentation of the wafer in the transmission process of a mechanical arm are avoided; the probability of frequent alarm of the equipment is reduced, the maintenance time of the equipment is reduced, and the utilization rate of the equipment is improved; the phenomena of cracking and falling of pollutants generated in the subsequent process (such as annealing) of the wafer are reduced, the defects of subsequent products are reduced, and the product quality is improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (29)

1. A wafer processing apparatus, comprising:
the wafer is provided with a wafer back side edge area protruding out of the workbench;
the back grinding module is positioned below the wafer and is in contact with the edge area of the back of the wafer so as to grind the edge area of the back of the wafer.
2. The wafer processing apparatus of claim 1, wherein: the back grinding module comprises N modules, wherein N is more than or equal to 2.
3. The wafer processing apparatus of claim 1, wherein: the shape of the longitudinal section of the back grinding module comprises one or a combination of a T shape, a column shape, an inverted trapezoid shape and an inverted soil shape.
4. The wafer processing apparatus of claim 1, wherein: the shape of the grinding surface of the back grinding module comprises a circle, and the diameter range of the back grinding module comprises 1 mm-30 mm.
5. The wafer processing apparatus of claim 1, wherein: the backgrinding module comprises Al2O3And a back grinding module.
6. The wafer processing apparatus of claim 1, wherein: the back grinding module comprises one or a combination of a rotary back grinding module and a fixed back grinding module.
7. The wafer processing apparatus of claim 1, wherein: the workbench comprises one of a rotary workbench and a fixed workbench.
8. The wafer processing apparatus of claim 7, wherein: when the workbench adopts the rotary workbench, the back grinding module adopts a rotary back grinding module, and the rotation direction of the rotary back grinding module and the rotation direction of the wafer comprise one or a combination of opposite directions and the same direction.
9. The wafer processing apparatus of claim 1, wherein: the backgrinding module further comprises a driving member for driving the backgrinding module.
10. The wafer processing apparatus of claim 1, wherein: the wafer processing equipment further comprises a spray head module, wherein the spray head module is located below the wafer and used for spraying cleaning liquid to the edge area of the back side of the wafer.
11. The wafer processing apparatus of claim 10, wherein: the spray head module comprises M spray nozzles, wherein M is more than or equal to 2.
12. The wafer processing apparatus of claim 10, wherein: the flow rate range of the cleaning liquid comprises 20 ml/min-150 ml/min.
13. The wafer processing apparatus of claim 10, wherein: the wafer processing equipment further comprises a collecting tank, wherein the collecting tank is used for collecting the cleaning liquid, and the bottom of the collecting tank comprises a liquid drainage channel.
14. The wafer processing apparatus of claim 1, wherein: the wafer processing equipment further comprises a mechanical arm used for transmitting the wafer, and the mechanical arm comprises a wafer contact part used for bearing the wafer.
15. A method of processing a wafer, comprising the steps of:
s1: providing a wafer;
s2: grinding the back edge area of the wafer by using wafer processing equipment, wherein the wafer processing equipment comprises a workbench and a back grinding module, the workbench is used for adsorbing the wafer, and the back edge area of the wafer protrudes out of the workbench; the back grinding module is positioned below the wafer and is in contact with the back edge area of the wafer so as to grind the back edge area of the wafer.
16. The wafer processing method of claim 15, wherein: the shape of the grinding surface of the back grinding module comprises a circle, and the diameter range of the back grinding module comprises 1 mm-30 mm.
17. The wafer processing method of claim 15, wherein: the grinding range of the back grinding module along the radial direction of the wafer comprises 1 mm-100 mm.
18. The wafer processing method of claim 15, wherein: the backgrinding module comprises Al2O3And a back grinding module.
19. The wafer processing method of claim 15, wherein: in step S2, the wafer processing apparatus further includes a nozzle module, where the nozzle module is located below the wafer and is configured to spray a cleaning solution to an edge area of the back side of the wafer.
20. The wafer processing method of claim 19, wherein: and when the back grinding module grinds the edge area of the back of the wafer, the nozzle module is used for cleaning the edge area of the back of the wafer, and the spraying area of the cleaning liquid covers the back grinding module.
21. The wafer processing method of claim 19, wherein: the flow rate range of the cleaning liquid comprises 20 ml/min-150 ml/min.
22. A method for preparing a photoresist pattern layer is characterized by comprising the following steps:
s1-1: providing a wafer;
s2-1: grinding the back edge area of the wafer by using wafer processing equipment, wherein the wafer processing equipment comprises a workbench and a back grinding module, the workbench is used for adsorbing the wafer, and the back edge area of the wafer protrudes out of the workbench; the back grinding module is positioned below the wafer and is in contact with the back edge area of the wafer so as to grind the back edge area of the wafer;
s3-1: and coating photoresist on the upper surface of the wafer, and carrying out photoetching and developing to prepare the photoresist pattern layer.
23. The method for producing a resist pattern layer according to claim 22, wherein: the shape of the grinding surface of the back grinding module comprises a circle, and the diameter range of the back grinding module comprises 1 mm-30 mm.
24. The method for producing a resist pattern layer according to claim 22, wherein: the grinding range of the back grinding module along the radial direction of the wafer comprises 1 mm-100 mm.
25. The method for producing a resist pattern layer according to claim 22, wherein: the backgrinding module comprises Al2O3And a back grinding module.
26. The method for producing a resist pattern layer according to claim 22, wherein: in step S2-1, the wafer processing apparatus further includes a nozzle module, where the nozzle module is located below the wafer and is configured to spray a cleaning solution onto an edge area of the back side of the wafer.
27. The method for producing a resist pattern layer according to claim 26, wherein: and when the back grinding module grinds the edge area of the back of the wafer, the nozzle module is used for cleaning the edge area of the back of the wafer, and the spraying area of the cleaning liquid covers the back grinding module.
28. The method for producing a resist pattern layer according to claim 26, wherein: the method further includes cleaning the wafer back side edge region using the showerhead module after step S2-1 and before step S3-1.
29. The method for producing a resist pattern layer according to claim 26, wherein: the flow rate range of the cleaning liquid comprises 20 ml/min-150 ml/min.
CN201811025346.1A 2018-09-04 2018-09-04 Wafer processing equipment, wafer processing method and application thereof Pending CN110875213A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111430223A (en) * 2020-05-15 2020-07-17 中国科学院微电子研究所 Pre-cleaning device
CN112820629A (en) * 2020-12-31 2021-05-18 上海新昇半导体科技有限公司 Wafer grinding method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111430223A (en) * 2020-05-15 2020-07-17 中国科学院微电子研究所 Pre-cleaning device
CN112820629A (en) * 2020-12-31 2021-05-18 上海新昇半导体科技有限公司 Wafer grinding method

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