CN107275440A - A kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation - Google Patents
A kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation Download PDFInfo
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- CN107275440A CN107275440A CN201710438002.2A CN201710438002A CN107275440A CN 107275440 A CN107275440 A CN 107275440A CN 201710438002 A CN201710438002 A CN 201710438002A CN 107275440 A CN107275440 A CN 107275440A
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- 238000002161 passivation Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 18
- 229910052793 cadmium Inorganic materials 0.000 title claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 239000010931 gold Substances 0.000 claims abstract description 22
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052737 gold Inorganic materials 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 1
- 229910004611 CdZnTe Inorganic materials 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention discloses a kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation, this method is polished including a.；B. corrode；C. gold electrode is prepared；D. four steps of surface passivation, wherein last surface passivation is comprised the concrete steps that：DLC film will be deposited to the CZT planes of crystal of the gold electrode obtained by step c using anode layer ion source in vacuum chamber, it is concretely comprised the following steps：It is 10 that air pressure in Ar gas, vacuum chamber is passed through into vacuum chamber‑3~10- 4Pa, opens anode layer ion source to 8~10min of CZT surface cleans；Then pass to C2H2Gas, keeping temperature is the DLC film that 20~25 DEG C of CZT plane of crystal deposit thickness in gold electrode are 5~10nm or so, that is, obtains the cadmium zinc telluride crystal wafer of surface passivation.This method is passivated using DLC film passivation CZT surfaces can preferably reduce tracking current, increase CZT wafer surface resistivity, reduce cadmium-zinc-teiluride（CdZnTe, CZT）The tracking current of detector, improves the electric property of CZT detector.
Description
Technical field
The present invention relates to a kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation, belong to semiconductor crystal nuclear detector
Manufacturing technology field.
Background knowledge
Cadmium-zinc-teiluride（CdZnTe, CZT）Crystal has atomic number high, and energy gap is big, the high series of advantages of resistivity, is to make
The ideal material of indoor temperature nucleus radiation detector.The subject matter that detector is present is that energy resolution is high, charge collection efficiency
Relatively low, especially, noise caused by the tracking current of device is to reduce one of principal element of detector service behaviour.Electricity
Leakage current between pole generally determines the dark current of detector.The detector made of CZT crystal is penetrated in X rays, γ
It is with a wide range of applications in terms of line spectral measurement and nuclear physics imaging., must in the detector ranging that current CZT makes
Good surface passivation method must be used, the electricity noise that tracking current reduces device is just effectively reduced.
The content of the invention
Present invention aims at a kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation is provided, this method can reduce tellurium
Zinc cadmium（CdZnTe, CZT）The tracking current of detector, improves the electric property of CZT detector.
To reach above-mentioned purpose, the present invention is adopted the following technical scheme that：
The present invention is a kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation, and this method is thin using surface depositing diamond-like
Film (DLC) is passivated to CZT surface physicses dry method, and it is comprised the following steps that：
A. polish：The cadmium zinc telluride crystal wafer of well cutting is subjected to rough polishing with diamond dust first, is successively 1.0,0.3,0.1 with particle diameter
μm alumina polishing solution cadmium zinc telluride crystal wafer is polished, until surfacing, be then cleaned by ultrasonic surface with deionized water,
Again in N2Dried up under protective atmosphere；
B. corrode：Above-mentioned polished, cleaned CZT chips are sequentially placed in the first corrosive liquid, the second corrosive liquid
In, surface chemistry corrosion is carried out, the time is respectively 1~2 minute；First corrosive liquid is 5%Br2The mixed solution of+methanol (BM),
Second corrosive liquid is 2%Br2The mixed solution of+20% lactic acid+ethylene glycol (LB)；The cadmium zinc telluride crystal wafer after corrosion will be completed in first
Cleaned in alcohol, to remove surface residual Br2And other impurities；
C. gold electrode is prepared：CZT chips after corrosion are placed on N2Dry up, covered in wafer surface in one layer under protective atmosphere
Between square hollowed-out mask,；Then place a wafer into evaporation equipment, vacuum is 10-3~10-4 Pa, in CZT chips
One surface evaporation deposits Au layers, and its hydatogenesis thickness degree is 100~150nm, and then natural cooling takes after 0.5~1 hour
Go out；Place a wafer into again in evaporation equipment, repeat above-mentioned hydatogenesis step, deposited in another surface evaporation of CZT chips
Au layers, its hydatogenesis thickness degree is 100~150nm；
D. surface passivation：CZT planes of crystal obtained by step c are passivated, protected using the mask plate opposite with previous step
Au electrodes are protected, DLC film are deposited to the CZT planes of crystal obtained by step c using anode layer ion source in vacuum chamber, its is specific
Step is：It is 10 that air pressure in Ar gas, vacuum chamber is passed through into vacuum chamber-3~10- 4Pa, opens anode layer ion source to CZT tables
8~10 min are cleaned in face；Then pass to C2H2Gas, keeping temperature is that 20~25 DEG C of CZT planes of crystal in gold electrode are deposited
Thickness is 5~10nm DLC films, that is, obtains the cadmium zinc telluride crystal wafer of surface passivation.
Compared with the existing technology, the present invention has following remarkable advantage：
The present invention is passivated using DLC film passivation CZT surfaces can preferably reduce tracking current, increase CZT chips
Surface resistivity, obtains smaller leakage current；Meanwhile, DLC films can suppress the external diffusion of CZT components, while carbon is first
Element is very low to the diffusion of CZT crystal from DLC films；Substrate need not be added when preparing DLC film using linear ion source method
Heat arrives high temperature, and temperature near room temperature, the influence caused with surface electrode to device in itself is smaller, can reduce tracking current,
Improve the electric property of CZT detector.
Brief description of the drawings
In the structural representation of Fig. 1 the present embodiment nuclear detector material cadmium zinc telluride crystal wafer surface passivations, figure, above and below Au is
Surface electrode；CdZnTe is chip；DLC is film of the CdZnTe wafer surfaces in addition to electrode.
Embodiment：
After now the specific embodiment of the present invention is described in.Embodiment one
The present embodiment is passivated using surface depositing diamond-like film (DLC) to CZT surface physicses dry method, its structure such as Fig. 1 institutes
Show, this method is comprised the following steps that：
A. polish：The cadmium zinc telluride crystal wafer of well cutting is subjected to rough polishing with diamond dust first, successively with particle diameter be 1.0,0.3,
0.1 μm of alumina polishing solution is polished to cadmium zinc telluride crystal wafer, until surfacing, is then cleaned by ultrasonic table with deionized water
Face, then in N2Dried up under protective atmosphere；
B. corrode：Above-mentioned polished, cleaned CZT chips are sequentially placed in the first corrosive liquid, the second corrosive liquid
In, surface chemistry corrosion is carried out, etching time is respectively 2 minutes, the first corrosive liquid is 5%Br2The mixing of+methanol (BM) is molten
Liquid, the second corrosive liquid is 2%Br2The mixed solution of+20% lactic acid+ethylene glycol (LB)；The cadmium zinc telluride crystal wafer after corrosion will be completed
Clean in methyl alcohol, to remove surface residual Br2And other impurities；
C. gold electrode is prepared：CZT chips after corrosion are placed on N2Dried up under protective atmosphere, one layer will be covered in wafer surface
The square-mask plate of middle hollow out；Then CZT chips are put into evaporation equipment, vacuum is 10-3 Pa, the one of CZT chips
Individual surface evaporation deposits Au layers, and its hydatogenesis thickness degree is 150nm, and then natural cooling is taken out after 0.5 hour；Again by chip
It is put into evaporation equipment and repeats above-mentioned hydatogenesis step, deposits Au layers in another surface evaporation of CZT chips, it evaporates heavy
Lamination thickness is 150nm Au layers；
D. surface passivation：The CZT planes of crystal of gold electrode obtained by step c are passivated, using opposite with previous step
Mask plate protects gold electrode, thin to the CZT planes of crystal deposition DLC obtained by step c using anode layer ion source in vacuum chamber
Film, it is concretely comprised the following steps：It is 4 × 10 that air pressure in Ar gas, vacuum chamber is passed through into vacuum chamber- 3Pa, opens anode layer ion source
To the min of CZT surface cleans 10；Then pass to C2H2Gas, keeping temperature is that 25 DEG C of CZT planes of crystal in gold electrode are deposited
Thickness is 10nm DLC films, that is, obtains the cadmium zinc telluride crystal wafer of surface passivation.
Claims (1)
1. a kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation, it is characterised in that this method deposits eka-gold using surface
Diamond thin film (DLC) is passivated to CZT surface physicses dry method, and it is comprised the following steps that：
A. polish：The cadmium zinc telluride crystal wafer of well cutting is subjected to rough polishing with diamond dust first, is successively 1.0,0.3,0.1 with particle diameter
μm alumina polishing solution cadmium zinc telluride crystal wafer is polished, until surfacing, be then cleaned by ultrasonic surface with deionized water,
Again in N2Dried up under protective atmosphere；
B. corrode：Above-mentioned polished, cleaned CZT chips are sequentially placed in the first corrosive liquid, the second corrosive liquid
In, surface chemistry corrosion is carried out, etching time is respectively 1~2 minute；First corrosive liquid is 5%Br2The mixing of+methanol (BM)
Solution, the second corrosive liquid is 2%Br2The mixed solution of+20% lactic acid+ethylene glycol (LB)；By completing, the cadmium-zinc-teiluride after corrosion is brilliant
Piece is cleaned in methyl alcohol, to remove surface residual Br2And other impurities；
C. gold electrode is prepared：CZT chips after corrosion are placed on N2Dried up under protective atmosphere, one layer of centre is covered in wafer surface
Square hollowed-out mask；Then place a wafer into evaporation equipment, vacuum is 10-3~10-4 Pa, at one of CZT chips
Surface evaporation deposits Au layers, and its hydatogenesis thickness degree is 100~150nm, and then natural cooling is taken out after 0.5~1 hour；Again
Place a wafer into and above-mentioned hydatogenesis step is repeated in evaporation equipment, Au layers are deposited in another surface evaporation of CZT chips, its
Hydatogenesis thickness degree is 100~150nm；
D. surface passivation：CZT planes of crystal obtained by step c are passivated, protected using the mask plate opposite with previous step
Gold electrode is protected, DLC film is deposited to the CZT planes of crystal obtained by step c using anode layer ion source in vacuum chamber, its is specific
Step is：It is 10 that air pressure in Ar gas, vacuum chamber is passed through into vacuum chamber-3~10- 4Pa, opens anode layer ion source to CZT tables
8~10 min are cleaned in face；Then pass to C2H2Gas, keeping temperature is that 20~25 DEG C of CZT planes of crystal in gold electrode are deposited
Thickness is 5~10nm DLC films, that is, obtains the cadmium zinc telluride crystal wafer of surface passivation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710438002.2A CN107275440A (en) | 2017-06-12 | 2017-06-12 | A kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710438002.2A CN107275440A (en) | 2017-06-12 | 2017-06-12 | A kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation |
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| CN107275440A true CN107275440A (en) | 2017-10-20 |
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| CN201710438002.2A Pending CN107275440A (en) | 2017-06-12 | 2017-06-12 | A kind of method of nuclear detector tellurium-zinc-cadmium wafer surface passivation |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461668A (en) * | 2018-09-07 | 2019-03-12 | 上海大学 | The test method of gold electrode and cadmium zinc telluride crystal wafer contact resistivity |
| CN110834228A (en) * | 2019-11-28 | 2020-02-25 | 湖南大合新材料有限公司 | Cleaning process of quartz tube for growing tellurium-zinc-cadmium |
| CN111192822A (en) * | 2020-01-10 | 2020-05-22 | 上海大学 | Low temperature bonding method of silicon wafer and compound semiconductor wafer |
| CN112216749A (en) * | 2020-10-13 | 2021-01-12 | 上海大学 | Cadmium Zinc Telluride (CZT) crystal detector with high-resistance passivation layer and preparation method thereof |
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|---|---|---|---|---|
| CN1632933A (en) * | 2004-12-02 | 2005-06-29 | 上海大学 | Surface passivation method for nuclear detector tellurium-zinc-cadmium wafer |
| CN101748381A (en) * | 2009-12-31 | 2010-06-23 | 中国地质大学（北京） | Method for preparing high-performance doped diamond-like film |
| CN105220112A (en) * | 2015-09-14 | 2016-01-06 | 北京师范大学 | The method of DLC films deposited and CZT semiconductor detector on polycrystalline CZT |
-
2017
- 2017-06-12 CN CN201710438002.2A patent/CN107275440A/en active Pending
Patent Citations (3)
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|---|---|---|---|---|
| CN1632933A (en) * | 2004-12-02 | 2005-06-29 | 上海大学 | Surface passivation method for nuclear detector tellurium-zinc-cadmium wafer |
| CN101748381A (en) * | 2009-12-31 | 2010-06-23 | 中国地质大学（北京） | Method for preparing high-performance doped diamond-like film |
| CN105220112A (en) * | 2015-09-14 | 2016-01-06 | 北京师范大学 | The method of DLC films deposited and CZT semiconductor detector on polycrystalline CZT |
Non-Patent Citations (1)
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| 金玮 等: "CdZnTe核辐射探测器表面物理和化学钝化研究", 《功能材料》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461668A (en) * | 2018-09-07 | 2019-03-12 | 上海大学 | The test method of gold electrode and cadmium zinc telluride crystal wafer contact resistivity |
| CN109461668B (en) * | 2018-09-07 | 2022-07-08 | 上海大学 | Method for testing contact resistivity of gold electrode and cadmium zinc telluride wafer |
| CN110834228A (en) * | 2019-11-28 | 2020-02-25 | 湖南大合新材料有限公司 | Cleaning process of quartz tube for growing tellurium-zinc-cadmium |
| CN111192822A (en) * | 2020-01-10 | 2020-05-22 | 上海大学 | Low temperature bonding method of silicon wafer and compound semiconductor wafer |
| CN111192822B (en) * | 2020-01-10 | 2023-10-20 | 上海大学 | Method for bonding silicon wafer and compound semiconductor wafer at low temperature |
| CN112216749A (en) * | 2020-10-13 | 2021-01-12 | 上海大学 | Cadmium Zinc Telluride (CZT) crystal detector with high-resistance passivation layer and preparation method thereof |
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Application publication date: 20171020 |