CN110289215B - Inductive coupling plasma etching process method of cadmium zinc telluride crystal - Google Patents
Inductive coupling plasma etching process method of cadmium zinc telluride crystal Download PDFInfo
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- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 title claims abstract description 209
- 239000013078 crystal Substances 0.000 title claims abstract description 202
- 238000000034 method Methods 0.000 title claims abstract description 114
- 238000001020 plasma etching Methods 0.000 title abstract description 6
- 230000008878 coupling Effects 0.000 title description 2
- 238000010168 coupling process Methods 0.000 title description 2
- 238000005859 coupling reaction Methods 0.000 title description 2
- 230000001939 inductive effect Effects 0.000 title description 2
- 238000005530 etching Methods 0.000 claims abstract description 174
- 239000000463 material Substances 0.000 claims abstract description 156
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 71
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 13
- 238000001259 photo etching Methods 0.000 claims description 50
- 238000005498 polishing Methods 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000002131 composite material Substances 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 229910004611 CdZnTe Inorganic materials 0.000 claims 21
- 238000007664 blowing Methods 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 7
- 238000011160 research Methods 0.000 abstract description 6
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 238000009206 nuclear medicine Methods 0.000 abstract description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 238000000227 grinding Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000010030 laminating Methods 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000375 suspending agent Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 238000003745 diagnosis Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
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Abstract
The invention discloses an inductively coupled plasma etching process method of a cadmium zinc telluride crystal, which adopts a substrate-semiconductor combined form as a cadmium zinc telluride crystal structure before etching. SF for the invention6And Ar is used as etching gas for the inductively coupled plasma etching, compared with the traditional reactive ion etching mode, the inductively coupled plasma etching has high ion density and higher etching rate, so that the etched tellurium-zinc-cadmium crystal has higher etching appearance precision and higher selectivity, and the etched surface is smooth and flat. The etched crystal material has important significance and application prospect in the aspects of safety monitoring and radiation protection in the fields of public safety, military, nuclear industry, nuclear medicine, scientific research, aerospace and the like.
Description
Technical Field
The invention relates to a semiconductor material etching process method, in particular to an etching process method of a tellurium-zinc-cadmium material, which is applied to the technical field of inorganic non-metallic material manufacturing processes.
Background
Cadmium zinc telluride (CdZnTe) is named CZT for short, is used as an excellent II-VI compound semiconductor, has larger band gap and atomic number, has stronger blocking capability and strong radiation resistance capability to high-energy radiation, can be used for detecting high-energy particle rays such as gamma rays, X rays and the like, and can be used for a nuclear radiation detector. The CdZnTe has higher resistivity, higher carrier transport property and smaller dislocation density, so that the CdZnTe crystal detector has smaller leakage current and noise at room temperature, the charge collection rate and the energy resolution of the CdZnTe crystal detector are ensured to be maintained in a higher horizontal range, the radiation detector based on the CdZnTe has wide application fields, and a new detection technical approach is provided in the fields of basic science, safety detection, space research, medical diagnosis, industrial flaw detection and the like.
In the semiconductor device process, etching plays an important role, and can be used for manufacturing a semiconductor micro device and carrying out surface treatment on a semiconductor material. Inductively Coupled Plasma (ICP) etching is one of common dry etching methods, and the dry etching method can meet higher precision requirements, and the ICP etching has the advantages of high etching speed, simplicity in operation, high selectivity, small etching damage, good uniformity in a large area, smooth and flat etching surface, and the like. At home and abroad, the research on the ICP etching process of the CdZnTe material is still blank, so that the method has important significance on the research on the ICP etching process of the CdZnTe material.
Disclosure of Invention
In order to solve the problems of the prior art, the invention aims to overcome the defects in the prior art and provide an inductively coupled plasma etching process method for cadmium zinc telluride crystals. The method has important significance and application prospect in the aspects of safety monitoring and radiation protection in the fields of public safety, military, nuclear industry, nuclear medicine, scientific research, aerospace and the like.
In order to achieve the purpose, the invention adopts the following technical scheme:
an inductively coupled plasma etching process method of a cadmium zinc telluride crystal comprises the following steps:
(1) mechanical polishing pretreatment of CdZnTe crystal:
after preparing a CdZnTe crystal material, reducing the roughness of the surface of the CdZnTe crystal material by adopting a mechanical polishing method, polishing the surface of the CdZnTe crystal material for 1-2 hours by using a polishing solution prepared from alumina polishing powder with the granularity of 0.05-1.0 mu m until the surface of the CdZnTe crystal material is smooth and the surface light of the CdZnTe crystal material is reflected like a mirror surface and has no granular form, cleaning the CdZnTe crystal material after mechanical polishing, and blow-drying by using nitrogen to obtain the clean CdZnTe crystal material; before etching, the structure of cadmium zinc telluride crystal is preferably adopted as a substrate-semiconductor combination form;
(2) the spin coating photoetching process of the CdZnTe crystal comprises the following steps:
photoetching the surface of the clean CdZnTe crystal material prepared in the step (1) by adopting a photoetching process of a semiconductor material; when photoetching is carried out, preparing positive photoresist, coating glue by using a spin coater, controlling the total time of pre-baking and post-baking to be 5-30 min, adopting deep ultraviolet exposure, controlling the exposure time to be 8-10 s, and controlling the development time to be 10-20s to obtain a photoetching-treated CdZnTe material, then cleaning, taking out and drying to obtain a photoetching-treated CdZnTe material;
(3) the technical process of inductively coupled plasma etching of the CdZnTe crystal comprises the following steps:
etching the surface of the photoetching CdZnTe material obtained after photoetching in the step (2) by adopting an inductively coupled plasma etching method, and etching by adopting SF6And Ar gas is used as etching source gas, and the vacuum degree of the environment of the etching cavity is controlled to be not more than 1.0 multiplied by 10-4Pa; controlling the frequency of a radio frequency power supply to be 13.56MHz, controlling the air pressure of an etching cavity to be 1-2 Pa, controlling the radio frequency power RF1 to be 600W, controlling the radio frequency power source RF2 to be 150W, and controlling and adjusting Ar and SF6And (3) controlling the etching time to be 45-180 min when different gas flows and proportions achieve different etching effects, and taking out the CdZnTe material after the etching process of the inductively coupled plasma is finished to obtain the thin film tellurium-zinc-cadmium crystal material device.
As a preferable technical solution of the present invention, in the step (1), the CdZnTe crystal material is a composite thin film material having a combination of a substrate-semiconductor structure, and has a structure in which a substrate layer and a CdZnTe crystal layer are stacked, assembled, and bonded in this order.
As the preferable technical scheme of the invention, in the step (1), a precise mechanical grinding and polishing machine is adopted to carry out polishing treatment on the surface of the CdZnTe crystal material.
As a preferable technical means of the present invention, in the step (3), Ar and SF are controlled6The gas volume ratio of (1): (1-2).
As a preferable technical scheme of the invention, in the step (3), the gas flow of Ar is controlled to be not less than 40 sccm.
As the preferable technical scheme of the invention, in the step (3), CdZnTe crystal etching is carried out by adopting an etching process of inductively coupled plasma etching, and the etching time is controlled to be 45-180 min.
As a preferable technical scheme of the invention, in the step (3), the thickness of the substrate of the obtained thin film tellurium-zinc-cadmium crystal material device is not less than 2mm, and the thickness of the CdZnTe crystal is not more than 200 μm.
Compared with the prior art, the invention has the following obvious and prominent substantive characteristics and remarkable advantages:
1. the method adopts inductively coupled plasma etching, so that the ion density is high, the etching rate is higher, the etching morphology of the etched tellurium-zinc-cadmium crystal has higher precision, the selection ratio is higher, and the etching surface is smooth and flat;
2. the method of the invention has much higher etching rate to the CdZnTe crystal material than the traditional etching process.
Drawings
FIG. 1 is a structural diagram of a cadmium zinc telluride crystal used in a method according to an embodiment of the present invention.
FIG. 2 is a surface topography of a CdZnTe crystal etched by an inductively coupled plasma etching method according to an embodiment of the present invention.
Detailed Description
The above-described scheme is further illustrated below with reference to specific embodiments, which are detailed below:
the first embodiment is as follows:
in this embodiment, referring to fig. 1, an inductively coupled plasma etching process method for a CdZnTe crystal is disclosed, where the structure of the CdZnTe material is a combination of a substrate and a semiconductor structure, and the CdZnTe material is formed by sequentially stacking and assembling two parts, i.e., a substrate and a CdZnTe crystal. Wherein the thickness of the FTO substrate is 2mm, and the thickness of the CdZnTe crystal is 200 mu m.
In this embodiment, referring to fig. 1, an inductively coupled plasma etching process method for a cadmium zinc telluride crystal includes the following steps:
(1) mechanical polishing pretreatment of CdZnTe crystal:
a CdZnTe crystal material is adopted, a composite film material in a combination form of a substrate-semiconductor structure is provided, the composite film material has a structure which is formed by sequentially laminating, assembling and combining an FTO substrate layer and a CdZnTe crystal layer, wherein the thickness of the FTO substrate is 2mm, the thickness of the CdZnTe crystal is 200, referring to figure 1, after the CdZnTe crystal material is prepared, a precision mechanical grinding and polishing machine is used for polishing the prepared raw material, and polishing solution is Al with the grain diameter of 0.5 mu m2O3Mixing abrasive and suspending agent, and mechanically polishing under 115g/cm2The rotating speed of a grinding disc is 80r/min, the polishing time is adjusted to be 1 hour, the roughness of the surface of the CdZnTe crystal material is reduced until the surface of the CdZnTe crystal material is smooth, the light on the surface of the CdZnTe crystal material is reflected like a mirror surface, and the surface of the CdZnTe crystal material has no granular form, then the mechanically polished CdZnTe crystal material is sequentially and respectively ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes, and then the CdZnTe crystal material is dried by high-purity nitrogen to obtain a clean CdZnTe crystal material;
(2) the spin coating photoetching process of the CdZnTe crystal comprises the following steps:
adopting a photoetching process of a semiconductor material, prebaking the clean CdZnTe crystal material prepared in the step (1) for 5min, then adopting positive photoresist, spin-coating the CdZnTe crystal material with a spin coater to form positive photoresist, then postbaking for 5min to complete photoresist homogenizing, then adopting deep ultraviolet exposure, carrying out exposure photoetching on the CdZnTe crystal material coated with the photoresist for 10s, controlling the positive photoresist to develop for 20s to obtain a photoetching CdZnTe material, then washing with deionized water for 10s, taking out and naturally drying to obtain a photoetching CdZnTe material;
(3) the technical process of inductively coupled plasma etching of the CdZnTe crystal comprises the following steps:
etching the surface of the photoetching CdZnTe material obtained after photoetching in the step (2) by adopting an inductively coupled plasma etching method, and etching by adopting SF6And Ar gas is used as etching source gas, and Ar and SF are controlled6The gas volume ratio of (1): 2, wherein the gas flow of Ar is 40sccm, and the vacuum degree of the etching chamber environment is controlled to be 1.0 multiplied by 10-4Pa; controlling the frequency of a radio frequency power supply to be 13.56MHz, controlling the air pressure of an etching cavity to be 2Pa, controlling the radio frequency power RF1 to be 600W, controlling the radio frequency power source RF2 to be 150W, controlling the etching time to be 45min, and taking out the CdZnTe material after the etching process of the inductively coupled plasma is finished to obtain the thin film tellurium-zinc-cadmium crystal material device.
Experimental test analysis:
the CdZnTe crystal obtained by the ICP etching in this example was observed at room temperature by using a scanning electron microscope, and it was found by observation that the CdZnTe surface after plasma etching was cleaner than the CdZnTe surface without any plasma treatment, the number of surface crystal particles was greatly reduced, and the roughness of the crystal surface was greatly reduced, as shown in fig. 2. The etching rate was 4 μm/h.
In the embodiment, other etching methods for improving the CdZnTe crystal by adopting ICP etching can obtain a faster etching rate than that of the traditional growth method. In addition, compared with other methods for etching the CdZnTe crystal by using ICP, the method has several advantages, the ICP etching is performed by using physical and chemical methods, the etching has anisotropy, the problem of transverse underetching in wet etching is well changed, and the etching with smaller dimension and higher requirement is met. The etched CdZnTe crystal has higher etching morphology, higher selection ratio, small etching damage, good large-area uniformity and smooth etched surface.
Example two:
this embodiment is substantially the same as the first embodiment, and is characterized in that:
in this embodiment, a CdZnTe material is formed by sequentially stacking and assembling a substrate and a CdZnTe crystal, wherein the substrate and the CdZnTe crystal are combined in a substrate-semiconductor structure. Wherein the thickness of the FTO substrate is 2mm, and the thickness of the CdZnTe crystal is 200 mu m.
In this embodiment, an inductively coupled plasma etching process method for a cadmium zinc telluride crystal includes the following steps:
(1) mechanical polishing pretreatment of CdZnTe crystal:
a CdZnTe crystal material is adopted, a composite film material with a substrate-semiconductor structure combination form is provided, the composite film material has a structure which is formed by sequentially laminating, assembling and combining an FTO substrate layer and a CdZnTe crystal layer, wherein the thickness of the FTO substrate is 2mm, the thickness of the CdZnTe crystal is 200, after the CdZnTe crystal material is prepared, a prepared raw material is polished by a precision mechanical polishing machine, and polishing liquid is Al with the grain diameter of 0.5 mu m2O3Mixing abrasive and suspending agent, and mechanically polishing under 115g/cm2The rotating speed of a grinding disc is 80r/min, the polishing time is adjusted to be 1 hour, the roughness of the surface of the CdZnTe crystal material is reduced until the surface of the CdZnTe crystal material is smooth, the light on the surface of the CdZnTe crystal material is reflected like a mirror surface, and the surface of the CdZnTe crystal material has no granular form, then the mechanically polished CdZnTe crystal material is sequentially and respectively ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes, and then the CdZnTe crystal material is dried by high-purity nitrogen to obtain a clean CdZnTe crystal material;
(2) the spin coating photoetching process of the CdZnTe crystal comprises the following steps:
adopting a photoetching process of a semiconductor material, prebaking the clean CdZnTe crystal material prepared in the step (1) for 5min, then adopting positive photoresist, spin-coating the CdZnTe crystal material with a spin coater to form positive photoresist, then postbaking for 5min to complete photoresist homogenizing, then adopting deep ultraviolet exposure, carrying out exposure photoetching on the CdZnTe crystal material coated with the photoresist for 10s, controlling the positive photoresist to develop for 20s to obtain a photoetching CdZnTe material, then washing with deionized water for 10s, taking out and naturally drying to obtain a photoetching CdZnTe material;
(3) the technical process of inductively coupled plasma etching of the CdZnTe crystal comprises the following steps:
etching the surface of the photoetching CdZnTe material obtained after photoetching in the step (2) by adopting an inductively coupled plasma etching method, and etching by adopting SF6And Ar gas is used as etching source gas, and Ar and SF are controlled6The gas volume ratio of (1): 1, wherein the gas flow of Ar is 40sccm, and the vacuum degree of the etching chamber environment is controlled to be 1.0 multiplied by 10-4Pa; controlling the frequency of a radio frequency power supply to be 13.56MHz, controlling the air pressure of an etching cavity to be 2Pa, controlling the radio frequency power RF1 to be 600W, controlling the radio frequency power source RF2 to be 150W, controlling the etching time to be 45min, and taking out the CdZnTe material after the etching process of the inductively coupled plasma is finished to obtain the thin film tellurium-zinc-cadmium crystal material device.
Experimental test analysis:
the cadmium zinc telluride material of the ICP etching process is used as a sample to carry out experimental tests, a scanning electron microscope is used for observing the CdZnTe crystal obtained by the ICP etching at room temperature, and the observation shows that the ion etched CdZnTe surface is cleaner than the CdZnTe surface which is not treated by any plasma, the surface crystal particle number is greatly reduced, and the roughness of the crystal surface is greatly reduced. The etching rate was 6 μm/h.
In the embodiment, other etching methods for improving the CdZnTe crystal by adopting ICP etching can obtain a faster etching rate than that of the traditional growth method. In addition, compared with other methods for etching the CdZnTe crystal by using ICP, the method has several advantages, the ICP etching is performed by using physical and chemical methods, the etching has anisotropy, the problem of transverse underetching in wet etching is well changed, and the etching with smaller dimension and higher requirement is met. The etched CdZnTe crystal has higher etching morphology, higher selection ratio, small etching damage, good large-area uniformity and smooth etched surface.
Example three:
this embodiment is substantially the same as the previous embodiment, and is characterized in that:
in this embodiment, a CdZnTe material is formed by sequentially stacking and assembling a substrate and a CdZnTe crystal, wherein the substrate and the CdZnTe crystal are combined in a substrate-semiconductor structure. Wherein the thickness of the FTO substrate is 2mm, and the thickness of the CdZnTe crystal is 200 mu m.
In this embodiment, an inductively coupled plasma etching process method for a cadmium zinc telluride crystal includes the following steps:
(1) mechanical polishing pretreatment of CdZnTe crystal:
a CdZnTe crystal material is adopted, a composite film material with a substrate-semiconductor structure combination form is provided, the composite film material has a structure which is formed by sequentially laminating, assembling and combining an FTO substrate layer and a CdZnTe crystal layer, wherein the thickness of the FTO substrate is 2mm, the thickness of the CdZnTe crystal is 200, after the CdZnTe crystal material is prepared, a prepared raw material is polished by a precision mechanical polishing machine, and polishing liquid is Al with the particle size of 0.05 mu m2O3Mixing abrasive and suspending agent, and mechanically polishing under 115g/cm2The rotating speed of a grinding disc is 80r/min, the polishing time is adjusted to be 2 hours, the roughness of the surface of the CdZnTe crystal material is reduced until the surface of the CdZnTe crystal material is smooth, the light on the surface of the CdZnTe crystal material is reflected like a mirror surface, and the surface of the CdZnTe crystal material has no granular form, then the mechanically polished CdZnTe crystal material is sequentially and respectively ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes, and then the CdZnTe crystal material is dried by high-purity nitrogen to obtain a clean CdZnTe crystal material;
(2) the spin coating photoetching process of the CdZnTe crystal comprises the following steps:
adopting a photoetching process of a semiconductor material, prebaking the clean CdZnTe crystal material prepared in the step (1) for 2.5min, then adopting positive photoresist, spin-coating the CdZnTe crystal material with a spin coater to form positive photoresist, then postbaking for 2.5min to complete photoresist homogenizing, then adopting deep ultraviolet exposure to perform exposure photoetching on the CdZnTe crystal material coated with the photoresist for 8s, controlling the development of the positive photoresist for 10s to obtain a photoetching CdZnTe material, then performing deionized water cleaning for 10s, taking out and naturally drying to obtain a photoetching CdZnTe material;
(3) the technical process of inductively coupled plasma etching of the CdZnTe crystal comprises the following steps:
etching the surface of the photoetching CdZnTe material obtained after photoetching in the step (2) by adopting an inductively coupled plasma etching method, and etching by adopting SF6And Ar gas is used as etching source gas, and Ar and SF are controlled6The gas volume ratio of (1): 1.5, wherein the gas flow of Ar is 40sccm, and the vacuum degree of the etching chamber environment is controlled to be 1.0 multiplied by 10-4Pa; controlling the frequency of a radio frequency power supply to be 13.56MHz, controlling the air pressure of an etching cavity to be 1Pa, controlling the radio frequency power RF1 to be 600W, controlling the radio frequency power source RF2 to be 150W, controlling the etching time to be 30min, and taking out the CdZnTe material after the etching process of the inductively coupled plasma is finished to obtain the thin film tellurium-zinc-cadmium crystal material device.
Experimental test analysis:
the cadmium zinc telluride material of the ICP etching process is used as a sample to carry out experimental tests, a scanning electron microscope is used for observing the CdZnTe crystal obtained by the ICP etching at room temperature, and the observation shows that the ion etched CdZnTe surface is cleaner than the CdZnTe surface which is not treated by any plasma, the surface crystal particle number is greatly reduced, and the roughness of the crystal surface is greatly reduced. The etching rate was 5 μm/h.
In the embodiment, other etching methods for improving the CdZnTe crystal by adopting ICP etching can obtain a faster etching rate than that of the traditional growth method. In addition, compared with other methods for etching the CdZnTe crystal by using ICP, the method has several advantages, the ICP etching is performed by using physical and chemical methods, the etching has anisotropy, the problem of transverse underetching in wet etching is well changed, and the etching with smaller dimension and higher requirement is met. The etched CdZnTe crystal has higher etching morphology, higher selection ratio, small etching damage, good large-area uniformity and smooth etched surface.
Example four:
this embodiment is substantially the same as the previous embodiment, and is characterized in that:
in this embodiment, a CdZnTe material is formed by sequentially stacking and assembling a substrate and a CdZnTe crystal, wherein the substrate and the CdZnTe crystal are combined in a substrate-semiconductor structure. Wherein the thickness of the FTO substrate is 2mm, and the thickness of the CdZnTe crystal is 200 mu m.
In this embodiment, an inductively coupled plasma etching process method for a cadmium zinc telluride crystal includes the following steps:
(1) mechanical polishing pretreatment of CdZnTe crystal:
a CdZnTe crystal material is adopted, a composite film material with a substrate-semiconductor structure combination form is provided, the composite film material has a structure which is formed by sequentially laminating, assembling and combining an FTO substrate layer and a CdZnTe crystal layer, wherein the thickness of the FTO substrate is 2mm, the thickness of the CdZnTe crystal is 200, after the CdZnTe crystal material is prepared, a prepared raw material is polished by a precision mechanical polishing machine, and polishing liquid is Al with the grain diameter of 1.0 mu m2O3Mixing abrasive and suspending agent, and mechanically polishing under 115g/cm2The rotating speed of a grinding disc is 80r/min, the polishing time is adjusted to be 1 hour, the roughness of the surface of the CdZnTe crystal material is reduced until the surface of the CdZnTe crystal material is smooth, the light on the surface of the CdZnTe crystal material is reflected like a mirror surface, and the surface of the CdZnTe crystal material has no granular form, then the mechanically polished CdZnTe crystal material is sequentially and respectively ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes, and then the CdZnTe crystal material is dried by high-purity nitrogen to obtain a clean CdZnTe crystal material;
(2) the spin coating photoetching process of the CdZnTe crystal comprises the following steps:
adopting a photoetching process of a semiconductor material, prebaking the clean CdZnTe crystal material prepared in the step (1) for 15min, then adopting positive photoresist, spin-coating the CdZnTe crystal material with a spin coater, then postbaking for 15min to complete photoresist homogenizing, then adopting deep ultraviolet exposure, carrying out exposure photoetching on the CdZnTe crystal material coated with the photoresist for 8s, controlling the positive photoresist to develop for 20s to obtain a photoetching CdZnTe material, then washing with deionized water for 10s, taking out and naturally drying to obtain a photoetching CdZnTe material;
(3) the technical process of inductively coupled plasma etching of the CdZnTe crystal comprises the following steps:
etching the surface of the photoetching CdZnTe material obtained after photoetching in the step (2) by adopting an inductively coupled plasma etching method, and etching by adopting SF6And Ar gas is used as etching source gas, and Ar and SF are controlled6The gas volume ratio of (1): 1, wherein the gas flow of Ar is 40sccm, and the vacuum degree of the etching chamber environment is controlled to be 1.0 multiplied by 10-4Pa; controlling the frequency of a radio frequency power supply to be 13.56MHz, controlling the air pressure of an etching cavity to be 1Pa, controlling the radio frequency power RF1 to be 600W, controlling the radio frequency power source RF2 to be 150W, controlling the etching time to be 180min, and taking out the CdZnTe material after the etching process of the inductively coupled plasma is finished to obtain the thin film tellurium-zinc-cadmium crystal material device.
Experimental test analysis:
the cadmium zinc telluride material of the ICP etching process is used as a sample to carry out experimental tests, a scanning electron microscope is used for observing the CdZnTe crystal obtained by the ICP etching at room temperature, and the observation shows that the ion etched CdZnTe surface is cleaner than the CdZnTe surface which is not treated by any plasma, the surface crystal particle number is greatly reduced, and the roughness of the crystal surface is greatly reduced. The etching rate was 20 μm/h.
In the embodiment, other etching methods for improving the CdZnTe crystal by adopting ICP etching can obtain a faster etching rate than that of the traditional growth method. In addition, compared with other methods for etching the CdZnTe crystal by using ICP, the method has several advantages, the ICP etching is performed by using physical and chemical methods, the etching has anisotropy, the problem of transverse underetching in wet etching is well changed, and the etching with smaller dimension and higher requirement is met. The etched CdZnTe crystal has higher etching morphology, higher selection ratio, small etching damage, good large-area uniformity and smooth etched surface.
Example five:
the structure of the CdZnTe material adopts a combination form of a substrate-semiconductor structure and is formed by sequentially laminating and assembling a substrate and the CdZnTe crystal. Wherein the thickness of the FTO substrate is 2mm, and the thickness of the CdZnTe crystal is 200 mu m.
In this embodiment, an inductively coupled plasma etching process method for a cadmium zinc telluride crystal includes the following steps:
(1) mechanical polishing pretreatment of CdZnTe crystal:
a CdZnTe crystal material is adopted, a composite film material with a substrate-semiconductor structure combination form is provided, the composite film material has a structure which is formed by sequentially laminating, assembling and combining an FTO substrate layer and a CdZnTe crystal layer, wherein the thickness of the FTO substrate is 2mm, the thickness of the CdZnTe crystal is 200, after the CdZnTe crystal material is prepared, a prepared raw material is polished by a precision mechanical polishing machine, and polishing liquid is Al with the grain diameter of 0.5 mu m2O3Mixing abrasive and suspending agent, and mechanically polishing under 115g/cm2The rotating speed of a grinding disc is 80r/min, the polishing time is adjusted to be 1 hour, the roughness of the surface of the CdZnTe crystal material is reduced until the surface of the CdZnTe crystal material is smooth, the light on the surface of the CdZnTe crystal material is reflected like a mirror surface, and the surface of the CdZnTe crystal material has no granular form, then the mechanically polished CdZnTe crystal material is sequentially and respectively ultrasonically cleaned in acetone, ethanol and deionized water for 15 minutes, and then the CdZnTe crystal material is dried by high-purity nitrogen to obtain a clean CdZnTe crystal material;
(2) the spin coating photoetching process of the CdZnTe crystal comprises the following steps:
adopting a photoetching process of a semiconductor material, prebaking the clean CdZnTe crystal material prepared in the step (1) for 5min, then adopting positive photoresist, spin-coating the CdZnTe crystal material with a spin coater to form positive photoresist, then postbaking for 5min to complete photoresist homogenizing, then adopting deep ultraviolet exposure, carrying out exposure photoetching on the CdZnTe crystal material coated with the photoresist for 10s, controlling the positive photoresist to develop for 20s to obtain a photoetching CdZnTe material, then washing with deionized water for 10s, taking out and naturally drying to obtain a photoetching CdZnTe material;
(3) etching the CdZnTe crystal:
etching the surface of the photoetching CdZnTe material obtained after photoetching in the step (2) by adopting an inductively coupled plasma etching method, wherein Ar gas is adopted as an etching source gas, the gas flow of Ar is controlled to be 40sccm, and the vacuum degree of the environment of an etching cavity is controlled to be 1.0 multiplied by 10-4Pa; controlling the frequency of a radio frequency power supply to be 13.56MHz, controlling the air pressure of an etching cavity to be 2Pa, controlling the radio frequency power RF1 to be 600W, controlling the radio frequency power source RF2 to be 150W, controlling the etching time to be 45min, and taking out the CdZnTe material after the etching process of the inductively coupled plasma is finished to obtain a sample of the tellurium-zinc-cadmium thin film crystal material.
Experimental test analysis:
the cadmium zinc telluride material of the ICP etching process of the comparative example is used as a sample to carry out experimental tests, a scanning electron microscope is used for observing the CdZnTe crystal obtained by the ICP etching at room temperature, and the observation shows that the surface of the CdZnTe subjected to the plasma etching is cleaner than the surface of the CdZnTe which is not subjected to any plasma treatment, the number of surface crystal particles is greatly reduced, and the roughness of the surface of the crystal is greatly reduced. The etching rate is 1 mu m/h; in the comparative example, a single Ar gas is used as an etching source gas, and the etching rate is not ideal.
In summary, the above embodiments adopt ICP etching to improve other etching methods of CdZnTe crystal, and can obtain a faster etching rate than the conventional growth method. In addition, compared with other methods for etching the CdZnTe crystal by using ICP, the method has several advantages, the ICP etching is performed by using physical and chemical methods, the etching has anisotropy, the problem of transverse underetching in wet etching is well changed, and the etching with smaller dimension and higher requirement is met. The etched CdZnTe crystal has higher precision, higher selection ratio, small etching damage, good uniformity of large area and good etching tableThe surface is flat and smooth. In the inductively coupled plasma etching process method for the cadmium zinc telluride crystal according to the above embodiment, the substrate-semiconductor combination is adopted for the cadmium zinc telluride crystal structure before etching. SF for the above examples6And Ar is used as etching gas for the inductively coupled plasma etching, compared with the traditional reactive ion etching mode, the inductively coupled plasma etching has high ion density and higher etching rate, so that the etched tellurium-zinc-cadmium crystal has higher etching appearance precision and higher selectivity, and the etched surface is smooth and flat. The etched crystal material has important significance and application prospect in the aspects of safety monitoring and radiation protection in the fields of public safety, military, nuclear industry, nuclear medicine, scientific research, aerospace and the like.
The embodiments of the present invention have been described with reference to the drawings, but the present invention is not limited to the above embodiments, and various changes and modifications can be made according to the purpose of the invention, and any changes, modifications, substitutions, combinations or simplifications made according to the spirit and principle of the technical solution of the present invention shall be equivalent substitutions, as long as the invention meets the purpose of the present invention, and the technical principle and the inventive concept of the inductively coupled plasma etching process of the cdte crystal of the present invention shall not depart from the protection scope of the present invention.
Claims (5)
1. An inductively coupled plasma etching process method of a cadmium zinc telluride crystal is characterized by comprising the following steps: the method comprises the following steps:
(1) mechanical polishing pretreatment of CdZnTe crystal:
after preparing the CdZnTe crystal material, reducing the roughness of the surface of the CdZnTe crystal material by adopting a mechanical polishing method, wherein the surface roughness of the CdZnTe crystal material is 0.05-1.0
Polishing the surface of the CdZnTe crystal material for 1-2 h by using polishing solution prepared from the alumina polishing powder with the m-granularity until the surface of the CdZnTe crystal material is smooth, the light on the surface of the CdZnTe crystal material is in mirror reflection, and the surface of the CdZnTe crystal material has no granular form,cleaning the mechanically polished CdZnTe crystal material, and then blowing the CdZnTe crystal material to dry by nitrogen to obtain a clean CdZnTe crystal material;
(2) the spin coating photoetching process of the CdZnTe crystal comprises the following steps:
photoetching the surface of the clean CdZnTe crystal material prepared in the step (1) by adopting a photoetching process of a semiconductor material; when photoetching is carried out, preparing positive photoresist, coating glue by using a spin coater, controlling the total time of pre-baking and post-baking to be 5-30 min, adopting deep ultraviolet exposure, controlling the exposure time to be 8-10 s and controlling the development time to be 10-20s, then cleaning, taking out and drying to obtain a photoetching CdZnTe material;
(3) the technical process of inductively coupled plasma etching of the CdZnTe crystal comprises the following steps:
etching the surface of the photoetching CdZnTe material obtained after photoetching in the step (2) by adopting an inductively coupled plasma etching method and adopting SF6And Ar gas is used as etching source gas, and the vacuum degree of the environment of the etching cavity is controlled to be not more than 1.0 multiplied by 10-4Pa, control of Ar and SF6The gas volume ratio of (1): (1-2); controlling the frequency of a radio frequency power supply to be 13.56MHz, controlling the air pressure of an etching cavity to be 1-2 Pa, controlling the radio frequency power RF1 to be 600W, controlling the radio frequency power source RF2 to be 150W, and controlling and adjusting Ar and SF6And (3) controlling the etching time to be 30-180 min when different gas flows and proportions achieve different etching effects, and taking out the CdZnTe material after the etching process of the inductively coupled plasma is finished to obtain the thin film tellurium-zinc-cadmium crystal material device.
2. The method for etching cadmium zinc telluride crystal by using inductively coupled plasma as claimed in claim 1, wherein: in the step (1), the CdZnTe crystal material is a composite film material with a substrate-semiconductor structure in a combined form, and has a structure formed by sequentially stacking, assembling and combining a substrate layer and a CdZnTe crystal layer.
3. The method for etching cadmium zinc telluride crystal by using inductively coupled plasma as claimed in claim 1, wherein: in the step (1), a precise mechanical polishing machine is adopted to perform polishing treatment on the surface of the CdZnTe crystal material.
4. The method for etching cadmium zinc telluride crystal by using inductively coupled plasma as claimed in claim 1, wherein: in the step (3), the gas flow rate of Ar is controlled to be not less than 40 sccm.
5. The method for etching cadmium zinc telluride crystal by using inductively coupled plasma as claimed in claim 1, wherein: in the step (3), the thickness of the substrate of the obtained thin film tellurium-zinc-cadmium crystal material device is not less than 2mm, and the thickness of the CdZnTe crystal is not more than 200
。
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