CN110834228A - Cleaning process of quartz tube for growing tellurium-zinc-cadmium - Google Patents
Cleaning process of quartz tube for growing tellurium-zinc-cadmium Download PDFInfo
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- CN110834228A CN110834228A CN201911195294.7A CN201911195294A CN110834228A CN 110834228 A CN110834228 A CN 110834228A CN 201911195294 A CN201911195294 A CN 201911195294A CN 110834228 A CN110834228 A CN 110834228A
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- Prior art keywords
- quartz tube
- cadmium
- zinc
- cleaning
- growing
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention discloses a quartz tube cleaning process for growing tellurium-zinc-cadmium, which comprises the steps of firstly, grinding and brushing a quartz tube by abrasive paper, then corroding reaction residues by a bromomethanol solution, simultaneously, treating by combining ultrasonic, improving the corrosion of the bromomethanol to the reaction residues by the ultrasonic mechanical action and cavitation action, improving the cleaning speed, and finally, carrying out ultrasonic treatment by sodium hydroxide, so as to buffer the roughness of the quartz surface and ensure the smoothness of final cleaning.
Description
Technical Field
The invention relates to the technical field of quartz tube cleaning, in particular to a cleaning process for a quartz tube for growing tellurium-zinc-cadmium.
Background
The quartz tube is made of silica, and has stable chemical and physical properties. Generally, the reaction vessel is used for high-temperature reaction, and since the raw materials are heated during the reaction process, traces of reactants are left on the quartz tube, and the quartz tube after the reaction needs to be thoroughly washed before being used.
At present, quartz tubes are mostly cleaned manually, the quartz tubes are placed in a horizontal pickling tank by hydrofluoric acid for soaking and cleaning, and after soaking and cleaning, the quartz tubes are washed by a large amount of water and then dried. The cleaning method wastes water resources, has certain damage to operators, and can cause incomplete cleaning and influence cleaning quality because the cleaned quartz test tube still has residual acid liquor left on the wall of the quartz tube.
Disclosure of Invention
In view of the above, the present invention provides a cleaning process for a quartz tube for growing cadmium zinc telluride, which is used for overcoming all or part of the defects of the cleaning process for the quartz tube for growing cadmium zinc telluride in the prior art.
Based on the aim, the invention provides a process for cleaning a quartz tube for growing cadmium zinc telluride, which comprises the following steps of grinding and brushing the quartz tube for growing cadmium zinc telluride with abrasive paper while the quartz tube is hot, then placing the quartz tube into a bromomethanol solution, carrying out ultrasonic treatment for 3-8 h under the ultrasonic action, taking out, placing the quartz tube into a sodium hydroxide solution, carrying out ultrasonic soaking for 40-70 min, taking out, washing with water, and drying.
In some alternative embodiments, the abrasive paper has a roughness of no greater than 10 μm.
In some optional embodiments, the grinding and brushing are carried out along the length direction of the quartz tube for 10-30 s.
In some alternative embodiments, the bromine methanol solution has a bromine volume ratio of 0.01% to 0.05%.
In some optional embodiments, the frequency of the ultrasonic treatment is 300-500 Hz.
In some optional embodiments, the frequency of the ultrasonic soaking is 0.1-1.5 MHz.
In some alternative embodiments, the drying is performed by high pressure hot air.
In some optional embodiments, the pressure of the high-pressure hot air drying is 3-9 Mpa.
From the above, the cleaning process of the quartz tube for growing tellurium-zinc-cadmium provided by the invention comprises the steps of grinding and brushing the quartz tube for growing tellurium-zinc-cadmium while the quartz tube is hot by abrasive paper, then placing the quartz tube into a bromomethanol solution, carrying out ultrasonic treatment for 3-8 h under the ultrasonic action, taking out, placing the quartz tube into a sodium hydroxide solution, carrying out ultrasonic soaking for 40-70 min, taking out, washing with water, drying, firstly carrying out grinding and brushing on the quartz tube by the abrasive paper, on one hand, primarily removing reaction residues on the surface of the quartz tube, simultaneously not wearing the quartz tube, on the other hand, carrying out surface roughening treatment on the reaction residues on the surface of the quartz tube, increasing the contact area of subsequent chemical cleaning, simultaneously facilitating ultrasonic impact, then corroding the reaction residues by the bromomethanol solution, simultaneously combining ultrasonic treatment, and carrying out mechanical action and cavitation action on the ultrasonic, the method has the advantages that the corrosion of the bromomethanol to reaction residues is promoted, the cleaning speed is increased, the sodium hydroxide ultrasonic treatment is adopted at last, in order to buffer the roughness of the quartz surface and ensure the smoothness of final cleaning, the whole method is simple to operate, the use of hydrofluoric acid is avoided, the use of a chemical reagent is reduced by adopting ultrasound, and meanwhile, the cleaning efficiency is improved.
Detailed Description
In the following description of the embodiments, the detailed description of the present invention, such as the manufacturing processes and the operation and use methods, will be further described in detail to help those skilled in the art to more fully, accurately and deeply understand the inventive concept and technical solutions of the present invention.
In order to solve the problem of insufficient cleaning of a quartz tube for growing tellurium-zinc-cadmium in the prior art, the quartz tube cleaning process for growing tellurium-zinc-cadmium provided by the invention comprises the steps of grinding and brushing the quartz tube for growing tellurium-zinc-cadmium while the quartz tube is hot by abrasive paper, then placing the quartz tube into a bromomethanol solution, carrying out ultrasonic treatment for 3-8 h under the ultrasonic action, taking out the quartz tube, placing the quartz tube into a sodium hydroxide solution, carrying out ultrasonic soaking for 40-70 min, taking out, washing with water, and drying.
In order to increase the cleaning rate, reduce the use of chemical agents and improve the cleaning cleanliness, the roughness of the abrasive paper is not more than 10 μm.
Reduce the use of chemical reagent in order to improve abluent speed, improve abluent cleanliness factor simultaneously, the scrubbing is adopted and is gone on along quartz capsule length direction, and it is 10 ~ 30s for a long time.
In order to improve the cleaning rate, reduce the use of chemical reagents and improve the cleaning cleanliness, the bromine volume ratio of the bromine methanol solution is 0.01-0.05%.
In order to improve the cleaning speed, the use of chemical reagents is reduced, and meanwhile, the cleaning cleanliness is improved, and the frequency of ultrasonic treatment is 300-500 Hz.
In order to improve the cleaning speed, the use of chemical reagents is reduced, and meanwhile, the cleaning cleanliness is improved, and the frequency of ultrasonic soaking is 0.1-1.5 MHz.
In order to improve the cleaning speed, the use of chemical reagents is reduced, and simultaneously, the cleaning cleanliness is improved.
The use of chemical reagents is reduced in order to improve the cleaning speed, and the cleaning cleanliness is improved simultaneously the pressure of the high-pressure hot air drying is 3-9 Mpa.
Firstly, the quartz tube is ground and brushed by abrasive paper, on one hand, the reaction residues on the surface of the quartz tube are primarily removed, meanwhile, the quartz tube is not abraded, on the other hand, the reaction residues on the surface of the quartz tube are subjected to surface roughening treatment, the contact area of subsequent chemical cleaning is increased, and the ultrasonic impact is facilitated, then adopting bromocarbinol solution to corrode the reaction residue, combining ultrasonic treatment, improving the corrosion of the bromocarbinol to the reaction residue and the cleaning rate by the mechanical action and the cavitation action of the ultrasonic treatment, finally adopting sodium hydroxide ultrasonic treatment, in order to buffer the roughness of the quartz surface and ensure the smoothness of the final cleaning, the whole method is simple to operate, and the use of hydrofluoric acid is avoided, the use of chemical reagents is reduced by adopting ultrasound, and the cleaning efficiency is improved.
Specifically, in the cleaning process for the quartz tube for growing tellurium, zinc and cadmium provided by embodiment 1 of the present invention, the produced quartz tube is ground and brushed along the length direction of the quartz tube by using abrasive paper with a roughness of 1 μm while the quartz tube is hot, and the grinding and brushing process is performed for a plurality of times at a place with a large amount of reaction residues and a place with a small amount of reaction residues, so that the number of times of grinding and brushing is appropriately reduced, damage to the quartz tube is prevented, and the grinding and brushing time is 25 s. And then placing the ground and brushed quartz tube into a bromomethanol solution with the bromine volume ratio of 0.01%, simultaneously carrying out ultrasonic treatment for 5 hours under the ultrasonic action with the frequency of 400Hz, properly heating the bromomethanol solution at the temperature of 70-80 ℃ in order to accelerate the cleaning speed, taking out the bromomethanol solution, cleaning the bromomethanol solution once, placing the bromomethanol solution into a sodium hydroxide solution with the concentration of 3-7 mol/L, soaking the bromomethanol solution for 55 minutes under the ultrasonic action with the frequency of 1.2MHz, taking out the bromomethanol solution, washing the bromomethanol solution with water, drying the bromomethanol solution by adopting hot air with the pressure of 4MPa, sleeving the quartz tube on an air outlet pipe in the drying process, inclining the opening of the quartz tube downwards by 30-45 ℃, and drying the quartz tube for 30-40 minutes.
Specifically, in the cleaning process for the quartz tube for growing tellurium, zinc and cadmium provided by embodiment 2 of the present invention, the produced quartz tube is ground and brushed along the length direction of the quartz tube by using abrasive paper with a roughness of 1 μm while the quartz tube is hot, and the grinding and brushing process is performed for a plurality of times at a place with a large amount of reaction residues and a place with a small amount of reaction residues, so that the number of times of grinding and brushing is appropriately reduced, damage to the quartz tube is prevented, and the grinding and brushing time is 25 s. And then placing the ground and brushed quartz tube into a bromomethanol solution with the bromine volume ratio of 0.02%, simultaneously carrying out ultrasonic treatment for 5 hours under the ultrasonic action with the frequency of 400Hz, properly heating the bromomethanol solution at the temperature of 70-80 ℃ in order to accelerate the cleaning speed, taking out, cleaning once, placing the quartz tube into a sodium hydroxide solution with the concentration of 3-7 mol/L, soaking for 55 minutes under the ultrasonic action with the frequency of 1.2MHz, taking out, washing with water, drying by adopting hot air with the pressure of 4MPa, sleeving the quartz tube on an air outlet tube in the drying process, inclining the opening of the quartz tube downwards by 30-45 ℃, and drying for 30-40 minutes.
Specifically, in the cleaning process for the quartz tube for growing tellurium, zinc and cadmium provided by embodiment 3 of the present invention, the produced quartz tube is ground and brushed along the length direction of the quartz tube by using abrasive paper with a roughness of 1 μm while the quartz tube is hot, and the grinding and brushing process is performed for a plurality of times at a place with a large amount of reaction residues and a place with a small amount of reaction residues, so that the number of times of grinding and brushing is appropriately reduced, damage to the quartz tube is prevented, and the grinding and brushing time is 25 s. And then placing the ground and brushed quartz tube into a bromomethanol solution with the bromine volume ratio of 0.03%, simultaneously carrying out ultrasonic treatment for 5 hours under the ultrasonic action with the frequency of 400Hz, properly heating the bromomethanol solution at the temperature of 70-80 ℃ in order to accelerate the cleaning speed, taking out the bromomethanol solution, cleaning the bromomethanol solution once, placing the bromomethanol solution into a sodium hydroxide solution with the concentration of 3-7 mol/L, soaking the bromomethanol solution for 55 minutes under the ultrasonic action with the frequency of 1.2MHz, taking out the bromomethanol solution, washing the bromomethanol solution with water, drying the bromomethanol solution by adopting hot air with the pressure of 4MPa, sleeving the quartz tube on an air outlet pipe in the drying process, inclining the opening of the quartz tube downwards by 30-45 ℃, and drying the quartz tube for 30-40 minutes.
Specifically, in the cleaning process for the quartz tube for growing tellurium, zinc and cadmium provided by embodiment 4 of the present invention, the produced quartz tube is ground and brushed along the length direction of the quartz tube by using abrasive paper with a roughness of 1 μm while the quartz tube is hot, and the grinding and brushing process is performed for a plurality of times at a place with a large amount of reaction residues and a place with a small amount of reaction residues, so that the number of times of grinding and brushing is appropriately reduced, damage to the quartz tube is prevented, and the grinding and brushing time is 25 s. And then placing the ground and brushed quartz tube into a bromomethanol solution with the bromine volume ratio of 0.04%, simultaneously carrying out ultrasonic treatment for 5 hours under the ultrasonic action with the frequency of 400Hz, properly heating the bromomethanol solution at the temperature of 70-80 ℃ in order to accelerate the cleaning speed, taking out the bromomethanol solution, cleaning the bromomethanol solution once, placing the bromomethanol solution into a sodium hydroxide solution with the concentration of 3-7 mol/L, soaking the bromomethanol solution for 55 minutes under the ultrasonic action with the frequency of 1.2MHz, taking out the bromomethanol solution, washing the bromomethanol solution with water, drying the bromomethanol solution by adopting hot air with the pressure of 4MPa, sleeving the quartz tube on an air outlet pipe in the drying process, inclining the opening of the quartz tube downwards by 30-45 ℃, and drying the quartz tube for 30-40 minutes.
Specifically, in the cleaning process for the quartz tube for growing tellurium, zinc and cadmium provided by embodiment 5 of the present invention, the produced quartz tube is ground and brushed along the length direction of the quartz tube by using abrasive paper with a roughness of 1 μm while the quartz tube is hot, and the grinding and brushing process is performed for a plurality of times at a place with a large amount of reaction residues and a place with a small amount of reaction residues, so that the number of times of grinding and brushing is appropriately reduced, damage to the quartz tube is prevented, and the grinding and brushing time is 25 s. And then placing the ground and brushed quartz tube into a bromomethanol solution with the bromine volume ratio of 0.05%, simultaneously carrying out ultrasonic treatment for 5 hours under the ultrasonic action with the frequency of 400Hz, properly heating the bromomethanol solution at the temperature of 70-80 ℃ in order to accelerate the cleaning speed, taking out the bromomethanol solution, cleaning the bromomethanol solution once, placing the bromomethanol solution into a sodium hydroxide solution with the concentration of 3-7 mol/L, soaking the bromomethanol solution for 55 minutes under the ultrasonic action with the frequency of 1.2MHz, taking out the bromomethanol solution, washing the bromomethanol solution with water, drying the bromomethanol solution by adopting hot air with the pressure of 4MPa, sleeving the quartz tube on an air outlet pipe in the drying process, inclining the opening of the quartz tube downwards by 30-45 ℃, and drying the quartz tube for 30-40 minutes.
The cleaned quartz tubes of examples 1 to 5 were evaluated for appearance, internal residual mark, and finish, and the evaluation results are shown in table 1 as full score 100, and the higher the score, the better the cleanliness.
TABLE 1 evaluation results of cleanliness
From the data, the cleaning cleanliness of the embodiment of the invention is far higher than that of hydrofluoric acid. And with the increase of the volume ratio of bromine in the bromomethanol, the internal residue is smaller and smaller, but the smoothness is correspondingly reduced, so that the volume ratio of bromine in the bromomethanol is better within the range of 0.01-0.05%.
Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to intimate that the scope of the disclosure, including the claims, is limited to these examples; within the idea of the invention, also features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity.
The embodiments of the invention are intended to embrace all such alternatives, modifications and variances that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, substitutions, improvements and the like that may be made without departing from the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (8)
1. A cleaning process for a quartz tube for growing cadmium zinc telluride is characterized by comprising the following steps of brushing the quartz tube for growing cadmium zinc telluride with abrasive paper while the quartz tube is hot, placing the quartz tube into a bromomethanol solution, carrying out ultrasonic treatment for 3-8 hours under the action of ultrasonic waves, taking out the quartz tube, placing the quartz tube into a sodium hydroxide solution, carrying out ultrasonic soaking for 40-70 min, taking out, washing with water, and drying.
2. The cleaning process of the quartz tube for growing tellurium-zinc-cadmium as claimed in claim 1, wherein the roughness of the abrasive paper is not more than 10 μm.
3. The cleaning process of the quartz tube for growing tellurium-zinc-cadmium as claimed in claim 1, wherein the rubbing is performed along the length direction of the quartz tube for a time of 10-30 s.
4. The cleaning tool for the quartz tube for growing tellurium-zinc-cadmium as claimed in claim 1, wherein the bromine volume ratio of the bromine-methanol solution is 0.01-0.05%.
5. The cleaning tool for the quartz tube for growing tellurium-zinc-cadmium as claimed in claim 1 or 4, wherein the frequency of the ultrasonic treatment is 300-500 Hz.
6. The quartz tube cleaner for growing tellurium-zinc-cadmium as claimed in claim 1, wherein the frequency of the ultrasonic immersion is 0.1-1.5 MHz.
7. The quartz tube cleaner for growing tellurium-zinc-cadmium as claimed in claim 1, wherein the drying is performed by high pressure hot air.
8. The cleaning tool for the quartz tube for growing tellurium-zinc-cadmium as claimed in claim 7, wherein the pressure of the high pressure hot air drying is 3-9 Mpa.
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CN201911195294.7A CN110834228A (en) | 2019-11-28 | 2019-11-28 | Cleaning process of quartz tube for growing tellurium-zinc-cadmium |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114669546A (en) * | 2022-04-18 | 2022-06-28 | 广东先导微电子科技有限公司 | Method for cleaning indium phosphide polycrystal material |
CN114775060A (en) * | 2022-04-18 | 2022-07-22 | 安徽承禹半导体材料科技有限公司 | Impurity removal method for tellurium-zinc-cadmium wafer preparation |
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CN109396967A (en) * | 2018-12-12 | 2019-03-01 | 中国电子科技集团公司第四十六研究所 | A kind of cmp method for cadmium selenide crystal |
CN109509701A (en) * | 2018-11-02 | 2019-03-22 | 武汉电信器件有限公司 | A kind of abrasive polishing method and corresponding wafer of wafer |
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CN1632933A (en) * | 2004-12-02 | 2005-06-29 | 上海大学 | Surface passivation method for nuclear detector tellurium-zinc-cadmium wafer |
CN101038942A (en) * | 2007-03-29 | 2007-09-19 | 上海大学 | Coplanar gate anode tellurium-zinc-cadmium detector with capacitor gate and method for making same |
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Cited By (3)
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CN114669546A (en) * | 2022-04-18 | 2022-06-28 | 广东先导微电子科技有限公司 | Method for cleaning indium phosphide polycrystal material |
CN114775060A (en) * | 2022-04-18 | 2022-07-22 | 安徽承禹半导体材料科技有限公司 | Impurity removal method for tellurium-zinc-cadmium wafer preparation |
CN114669546B (en) * | 2022-04-18 | 2023-08-22 | 广东先导微电子科技有限公司 | Method for cleaning indium phosphide polycrystal material |
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Application publication date: 20200225 |