CN117810156A - Wafer bonding method and wafer bonding device - Google Patents
Wafer bonding method and wafer bonding device Download PDFInfo
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- CN117810156A CN117810156A CN202410204452.5A CN202410204452A CN117810156A CN 117810156 A CN117810156 A CN 117810156A CN 202410204452 A CN202410204452 A CN 202410204452A CN 117810156 A CN117810156 A CN 117810156A
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 235000012431 wafers Nutrition 0.000 claims abstract description 170
- 239000000853 adhesive Substances 0.000 claims abstract description 22
- 230000001070 adhesive effect Effects 0.000 claims abstract description 22
- 238000001125 extrusion Methods 0.000 claims abstract description 18
- 238000001816 cooling Methods 0.000 claims abstract description 12
- 238000012545 processing Methods 0.000 claims abstract description 12
- 238000007664 blowing Methods 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000000919 ceramic Substances 0.000 claims description 19
- 238000000227 grinding Methods 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 11
- 239000003292 glue Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 claims description 8
- 239000004744 fabric Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 23
- 229910001195 gallium oxide Inorganic materials 0.000 description 23
- 230000001105 regulatory effect Effects 0.000 description 21
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000012827 research and development Methods 0.000 description 3
- 238000005201 scrubbing Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Abstract
The invention relates to a wafer bonding method and a wafer bonding device, which belong to the field of processing of semiconductor materials, and a template is bonded to a carrier plate by using an adhesive; sequentially coating an adhesive into a plurality of wafer holes on a carrier plate; the A surface of a plurality of wafers is downward and is placed on the adhesive in each wafer hole in turn; covering a layer of paper above the carrying disc, and assembling the pressure head and the base together; pressurizing the pressure head, and extruding the B surface of the wafer in a first stage by rubber air blowing of the pressure head; the rubber drum air carries out second-stage extrusion on the B surface of the wafer; moving the sticking device to a cooling table for cooling; after the bonding device is cooled to room temperature, the pressure head is taken down, and the carrying disc is taken out from the base; carrying out subsequent process treatment on the B surface of the bonded wafer; sequentially taking out a plurality of wafers from the plurality of wafer holes; the B surface of the wafer is downward, and the A surface of the wafer is subjected to subsequent process treatment, so that the precision of processing the wafer is ensured.
Description
Technical Field
The invention relates to a wafer bonding method and a wafer bonding device, and belongs to the field of processing of semiconductor materials.
Background
For the new semiconductor materials still under development at present, such as gallium oxide, cadmium sulfide, aluminum nitride and the like, the size of the wafer is still limited to less than 2 inches of 10mm×10mm, 25mm×25mm and the like, and mass production is not realized, and the grinding or polishing process can only adopt the traditional single-sided processing technology, namely, the manual bonding mode is adopted to bond one side of the wafer on a carrier disc by means of an adhesive, and the grinding processing is carried out on the other side of the wafer. In chinese patent CN114649243a, a wafer bonding apparatus and a wafer bonding method are disclosed, in which a wafer is adsorbed on a chuck by a second adsorption apparatus, a uniform adhesive layer is manufactured by rotating a first adsorption apparatus, then the wafer of the first adsorption apparatus is combined with the adhesive layer, and finally the combination of the wafer and the adhesive layer is bonded with a mounting seat coated with an adhesive. The uniformity of the thickness of the adhesive layer and the uniformity of the distribution of the wafers on the carrier plate during wafer bonding directly affect the TTV of the processed wafers, the uniformity of the thickness among the wafers and the uniformity of the surface quality of the wafers, thereby seriously affecting the research and development iteration speed of related wafers. Therefore, the invention of the wafer bonding method and the wafer bonding device has very important significance.
Disclosure of Invention
In view of the problems that in the prior art, TTV of small-size wafers, consistency of thicknesses among wafers, consistency of quality of the surfaces of the wafers cannot be guaranteed, and the back surface is scratched during the displacement of an adhesive sheet, the invention provides a wafer bonding method and an adhesive sheet device, which can guarantee uniformity of thickness of adhesive layers, consistency of thicknesses among wafers and consistency of processing quality of the surfaces of the wafers in the same carrier disc; the method can effectively solve the problems of poor TTV, poor inter-chip consistency and low yield caused by uneven adhesive layers and uneven dispersion of wafers on the carrier plate when the traditional pure manual bonding sheets are adopted.
The technical scheme adopted by the invention is as follows: a wafer bonding method comprises the following steps: firstly, selecting a plurality of wafers as wafers to be processed;
step two, selecting a template of the die bonding device according to the size of the wafer to be processed;
thirdly, adhering the template to the carrying disc by using an adhesive with the melting point of more than 90 ℃;
fourthly, placing the base of the bonding device on a heating table, placing the carrying disc in the center of the base, setting the temperature of the heating table to be 50-90 ℃, and sequentially coating the adhesive into a plurality of wafer holes on the carrying disc;
fifthly, placing the A faces of the wafers downwards on the adhesive in each wafer hole in sequence;
step six, covering a layer of paper above the carrying disc, and assembling the pressure head of the sticking device with the base;
seventh, pressurizing the pressure head, and performing first-stage extrusion on the B surface of the wafer by rubber air blowing of the pressure head; pressurizing the pressure head again, and extruding the B surface of the wafer in a second stage by using rubber air-blowing, wherein after the second stage of extrusion, the thickness deviation of the adhesive layer is less than or equal to 2 mu m; moving the integrated adhesive sheet devices to a cooling table for cooling;
eighth, after the bonding device is cooled to room temperature, adjusting the pressure indication value to 0MPa; taking down the pressure head, and taking out the carrying disc from the base;
ninth, carrying out subsequent grinding or thinning or polishing working procedure treatment on the B surface of the bonded wafer;
tenth, after finishing the B-side grinding or thinning or polishing process of the wafer, placing the carrying disc on a heating table, setting the temperature of the heating table to 50-90 ℃, sequentially taking out a plurality of wafers from a plurality of wafer holes, and cleaning the wafers;
and eleventh, the surface B of the cleaned wafer faces downwards, the wafer is stuck, and the surface A of the wafer is subjected to subsequent grinding or thinning or polishing procedures, wherein the method is the same as that of the fourth step to the tenth step, and the grinding or thinning or polishing processing of the surface B and the surface A of the wafer is completed.
In the seventh step, the pressure indication value of the extrusion in the first stage is 0.02-0.1 MPa, and 15-90 s are maintained; the pressure indication value of the extrusion in the second stage is 0.1-0.28 MPa, and the extrusion is maintained for 3-30 min.
The adhesive is wax or glue.
And in the sixth step, a layer of paper which is wax-absorbing paper or filter paper or dust-free cloth is covered above the carrying disc.
The carrier plate is a quartz plate or a ceramic plate.
The die bonding device comprises a die plate, a carrying disc, a pressing head and a base; the template is arranged on the carrying disc, the carrying disc is arranged in the base, and the pressure head is fixed on the base.
The template is a circular plate, a locating hole is formed in the center of the template, a plurality of wafer holes are formed in the plate surface along the edge of the template at intervals, a wax guide groove is formed in the center of four symmetry axes of the wafer holes, and the wafer holes are communicated with the wax guide groove.
The diameter of the template is phi 82 mm-phi 200mm, the size of the wafer hole is 10.1mm multiplied by 10.1mm or 15.1mm multiplied by 15.1mm or 20.1mm multiplied by 20.1mm or 25.1mm multiplied by 25.1mm square holes or round holes with phi 10.1 mm-phi 50.9mm, and the diameter of the positioning hole is phi 1.0 mm-2.0 mm.
Thickness of the template = wafer target thickness +10 μm; the template is made of plastic or resin or polymer composite material or stainless steel.
The pressure head comprises a pressure head ring, a rubber sheet and a fixing ring, wherein a pressure hollow pipe is arranged outside the pressure head, the rubber sheet is fixed in the pressure head ring through the fixing ring, the pressure hollow pipe is communicated with an inner cavity of the rubber sheet, two positioning pin holes and a plurality of screw holes are formed in the pressure head ring, and the two positioning pin holes are arranged at intervals corresponding to each other.
The invention has the beneficial effects that: the invention designs a wafer bonding method and a wafer bonding device, and the wafer bonding method can solve the common problems that the thickness uniformity of an adhesive layer cannot be controlled when manually bonding wafers, and wafers are shifted when being pressed and cooled. The method is adopted to adhere the wafer, the TTV of the processed wafer is smaller than 3 mu m, and the thickness deviation between different wafers on the same disc is smaller than 3 mu m; the method can solve the problem that the wafer cannot be stuck with wax with high precision by adopting an automatic wax sticking machine due to small size in the initial stage of research and development, effectively ensures the precision of processing the wafer and provides effective guarantee for research and development and promotion of crystal materials.
Drawings
FIG. 1 is a schematic view of a die bonding apparatus according to the present invention;
FIG. 2 is an exploded view of the structure of FIG. 1;
FIG. 3 is a schematic view of the structure of the form of the present invention;
FIG. 4 is a schematic view of the structure of the ram of the present invention;
FIG. 5 is a schematic view of the structure of the base of the present invention;
FIG. 6 is a schematic illustration of a template of the present invention affixed to a carrier plate;
FIG. 7 is a schematic illustration of the application of adhesive to the template wafer aperture locations in accordance with the present invention;
FIG. 8 is a schematic view of the placement of a wafer onto an adhesive in a wafer aperture in accordance with the present invention;
FIG. 9 is a schematic view of the present invention with a carrier tray placed into a base.
In the figure: 1. a die bonding device; 1-1, a template; 1-1-1, positioning holes; 1-1-2, wafer holes; 1-1-3, a wax guiding groove; 1-2, carrying a disc; 1-3, a pressure head; 1-3-1, a pressure head ring; 1-3-2 parts of rubber; 1-3-3, a fixed ring; 1-3-4, a pressure hollow pipe; 1-3-1-1, locating pin holes; 1-3-1-2, screw holes; 1-4, a base; 1-4-1, locating pins; 1-4-2, threaded holes; 2. a wafer; 3. and (3) an adhesive.
Detailed Description
As shown in fig. 1 and 2, the die bonding device 1 includes a die plate 1-1, a carrier plate 1-2, a pressing head 1-3, and a base 1-4.
As shown in FIG. 3, a locating hole 1-1-1 is formed in the center of a template 1-1, a plurality of wafer holes 1-1-2 are formed in the plate surface along the edge of the template 1-1 at intervals, a wax guiding groove 1-1-3 is formed in the center of four symmetry axes of the wafer holes 1-1-2, and the wafer holes 1-1-2 are communicated with the wax guiding groove 1-1-3.
The diameter of the template 1-1 is phi 82 mm-phi 200mm, the size of the wafer hole 1-1-2 is 10.1mm multiplied by 10.1mm or 15.1mm multiplied by 15.1mm or 20.1mm multiplied by 20.1mm or 25.1mm multiplied by 25.1mm square holes or round holes with phi 10.1 mm-phi 50.9mm, and the diameter of the positioning hole 1-1-1 is phi 1.0 mm-2.0 mm.
Thickness of template 1-1 = wafer target thickness +10 μm; the template 1-1 is made of plastic or resin or other polymer composite materials or stainless steel.
As shown in FIG. 4, the pressure head 1-3 comprises a pressure head ring 1-3-1, a rubber cover 1-3-2 and a fixing ring 1-3-3, wherein a pressure hollow pipe 1-3-4 is arranged outside the pressure head 1-3, the rubber cover 1-3-2 is fixed in the pressure head ring 1-3-1 through the fixing ring 1-3-3, the rubber cover 1-3-2 is guaranteed to be airtight, the pressure hollow pipe 1-3-4 is communicated with an inner cavity of the rubber cover 1-3-2, two positioning pin holes 1-3-1 and a plurality of screw holes 1-3-1-2 are arranged on the pressure head ring 1-3-1, the two positioning pin holes 1-3-1-1 are correspondingly arranged at intervals, and when the pressure head is used, the pressure hollow pipe 1-3-4 is connected with a pressure supply device through a pressure regulating valve, and the pressure of the pressure regulating valve can be controlled to blow air to the rubber cover 1-3-2 through the pressure regulating valve, so that the rubber cover 1-3-2 is inflated.
As shown in FIG. 5, the base 1-4 is a ring-shaped body, two positioning pins 1-4-1 and a plurality of threaded holes 1-4-2 are arranged on the base 1-4, and the two positioning pins 1-4-1 are arranged at intervals corresponding to each other.
Example 1: firstly, selecting gallium oxide wafers with the size of 10mm multiplied by 10mm, wherein the thickness value is 850+/-30 mu m;
secondly, manufacturing a corresponding template 1-1, wherein the diameter of the template 1-1 is phi 82mm; the square hole size is 10.1mm multiplied by 10.1mm, and the thickness of the template is 600 mu m;
thirdly, aligning the center of the quartz disc with the positioning hole 1-1-1 of the template 1-1, adhering the template 1-1 to the quartz disc by adopting wax with the melting point of 95 ℃, pressurizing and cooling by using a weight, and cleaning the residual wax in the wafer hole 1-1-2 after the wax is solidified, as shown in figure 6;
fourthly, placing the quartz disc adhered with the template 1-1 on another heating table, setting the temperature of the heating table to 55 ℃, and after the temperature of the quartz disc reaches the set temperature, sequentially coating wax into a plurality of wafer holes 1-1-2 on the quartz disc, as shown in fig. 7;
fifth, the A surface of the wafer 2 of gallium oxide is placed downwards, and then the wafer is placed on the adhesive 3 in each wafer hole 1-1-2 in turn, as shown in FIG. 8;
step six, placing a quartz disc into the base 1-4, covering a layer of filter paper above the quartz disc, placing the pressure head 1-3 on the base 1-4, correspondingly inserting two positioning pins 1-4-1 of the base 1-4 into two positioning pin holes 1-3-1 of the pressure head 1-3 as shown in figure 9, connecting 6 screw holes 1-3-1-2 on the pressure head 1-3 pressure head ring 1-3-1 with 6 screw holes 1-4-2 of the base 1-4 by using 6 fixing screws, and locking the pressure head 1-3 on the base 1-4;
a seventh step of connecting a pressure supply device with a pressure head 1-3 pressure hollow pipe 1-3-4 through a pressure regulating valve, regulating the indication value of the pressure regulating valve to 0.1MPa for 30s, performing first-stage extrusion on the B surface of a wafer 2 of gallium oxide by using air blowing of a rubber cover 1-3-2 of a wafer sticking device 1, regulating the indication value of the pressure regulating valve to 0.15MPa for 4min, performing second-stage extrusion on the B surface of the wafer 2 by using air blowing of the rubber cover 1-3-2, and after the second-stage extrusion, moving the thickness deviation of an adhesive layer to be less than or equal to 2 mu m, and performing pressure maintaining and cooling on the whole wafer sticking device 1 assembled together;
eighth, after the die bonding device 1 is cooled to room temperature, adjusting the pressure value of the pressure regulating valve to 0MPa; loosening 6 fixing screws on the pressure head 1-3, taking down the pressure head 1-3, and taking out the quartz disc from the base 1-4;
ninth, scrubbing and cleaning the surface of the gallium oxide wafer 2 and residual wax at the edge by using dust-free cloth dipped with alcohol;
tenth, grinding the adhered gallium oxide wafer 2 by a grinder;
eleventh, after finishing grinding, placing the quartz disc on a heating table, setting the temperature of the heating table to 55 ℃, sequentially taking out the gallium oxide wafer 2 from the wafer holes 1-1-2, and cleaning the gallium oxide wafer 2;
twelfth, the face B of the gallium oxide wafer 2 processed by the cleaning procedure is downward, the gallium oxide wafer 2 is stuck, and the face A of the gallium oxide wafer 2 is subjected to subsequent grinding treatment, and the grinding processing of the face B and the face A of the gallium oxide wafer is completed in the same way as the methods from the fourth step to the eleventh step.
Example 2: firstly, selecting a gallium oxide wafer with the size of 2 inches, wherein the thickness value is 750+/-30 mu m;
secondly, manufacturing a corresponding template, wherein the diameter of the template is phi 136mm; the size of the circular hole is phi 50.9mm, and the thickness of the template is 650 mu m;
thirdly, aligning the center of the ceramic disc with the positioning hole 1-1-1 of the template 1-1, pasting the template on the ceramic disc by adopting glue with the softening point of 110 ℃, pressurizing and cooling by using a weight, and cleaning the glue remained in the wafer hole 1-1-2 after the glue is solidified, as shown in figure 6;
fourthly, placing the ceramic disc adhered with the template 1-1 on another heating table, setting the temperature of the heating table to be 70 ℃, and after the temperature of the ceramic disc reaches the set temperature, sequentially coating glue into a plurality of wafer holes 1-1-2 on the ceramic disc, as shown in fig. 7;
fifth, the A surface of the wafer 2 of gallium oxide is placed downwards, and then the wafer is placed on the adhesive 3 in each wafer hole 1-1-2 in turn, as shown in FIG. 8;
sixthly, placing a ceramic disc into the base 1-4, covering a layer of dust-free cloth above the ceramic disc, placing the pressure head 1-3 on the base 1-4, correspondingly inserting two positioning pins 1-4-1 of the base 1-4 into two positioning pin holes 1-3-1 of the pressure head 1-3 as shown in figure 9, respectively connecting 6 screw holes 1-3-1-2 on the pressure head 1-3 pressure head ring 1-3-1 with 6 screw holes 1-4-2 of the base 1-4 by using 6 fixing screws, and locking the pressure head 1-3 on the base 1-4;
a seventh step of connecting a pressure supply device with a pressure head 1-3 pressure hollow pipe 1-3-4 through a pressure regulating valve, regulating the indication value of the pressure regulating valve to 0.1MPa for 90s, performing first-stage extrusion on the B surface of a wafer 2 of gallium oxide by blowing air of a rubber cover 1-3-2 of a wafer sticking device 1, regulating the indication value of the pressure regulating valve to 0.28MPa for 10min, performing second-stage extrusion on the B surface of the wafer 2 by blowing air of the rubber cover 1-3-2, after the second-stage extrusion, moving the thickness deviation of a rubber layer to be less than or equal to 2 mu m, and performing pressure maintaining and cooling on the whole wafer sticking device 1 assembled together;
eighth, after the die bonding device 1 is cooled to room temperature, adjusting the pressure value of the pressure regulating valve to 0MPa; loosening 6 fixing screws on the pressure head 1-3, taking down the pressure head 1-3, and taking out the quartz disc from the base 1-4;
ninth, scrubbing and cleaning the surface of the wafer 2 of gallium oxide and the residual glue at the edge by using dust-free cloth dipped with alcohol;
tenth, polishing the adhered gallium oxide wafer 2 by a polishing machine;
eleventh, after polishing, placing the ceramic disc on a heating table, setting the temperature of the heating table to 70 ℃, sequentially taking out the gallium oxide wafer 2 from the wafer holes 1-1-2, and cleaning the gallium oxide wafer 2;
and twelfth, the B surface of the gallium oxide wafer 2 processed by the cleaning procedure is downward, the gallium oxide wafer 2 is stuck, and the A surface of the gallium oxide wafer 2 is subjected to subsequent polishing treatment, and the polishing processing of the B surface and the A surface of the gallium oxide wafer is completed by the same method as that of the fourth to eleventh steps.
Example 3: firstly, selecting an aluminum nitride wafer with the size of 1 inch, wherein the thickness value is 600+/-30 mu m;
secondly, manufacturing a corresponding template, wherein the diameter of the template is phi 136mm; the round hole has the size of phi 25.5mm, and the thickness of the template is 490 mu m;
thirdly, aligning the center of the ceramic disc with the positioning hole 1-1-1 of the template 1-1, pasting the template 1-1 on the ceramic disc by adopting glue with the melting point of 150 ℃, pressurizing and cooling by using a weight, and cleaning the glue remained in the wafer hole 1-1-2 after the glue is solidified, as shown in figure 6;
fourthly, placing the ceramic disc adhered with the template 1-1 on another heating table, setting the temperature of the heating table to be 85 ℃, and after the temperature of the ceramic disc reaches the set temperature, sequentially coating wax into a plurality of wafer holes 1-1-2 on the ceramic disc, as shown in fig. 7;
fifth, the A surface of the plurality of aluminum nitride wafers 2 is placed on the wax in each wafer hole 1-1-2 in turn, as shown in FIG. 8;
sixthly, placing a ceramic disc into the base 1-4, covering a layer of dust-free paper above the ceramic disc, placing the pressure head 1-3 on the base 1-4, correspondingly inserting two positioning pins 1-4-1 of the base 1-4 into two positioning pin holes 1-3-1 of the pressure head 1-3 as shown in figure 9, respectively connecting 6 screw holes 1-3-1-2 on the pressure head 1-3 pressure head ring 1-3-1 with 6 screw holes 1-4-2 of the base 1-4 by using 6 fixing screws, and locking the pressure head 1-3 on the base 1-4;
a seventh step of connecting a pressure supply device with a pressure head 1-3 pressure hollow pipe 1-3-4 through a pressure regulating valve, regulating the indication value of the pressure regulating valve to 0.05MPa for 70s, performing first-stage extrusion on the B surface of an aluminum nitride wafer 2 by using air blown from a rubber cover 1-3-2 of a wafer sticking device 1, regulating the indication value of the pressure regulating valve to 0.2MPa for 20min, performing second-stage extrusion on the B surface of the wafer 2 by using air blown from the rubber cover 1-3-2, and after the second-stage extrusion, moving the thickness deviation of an adhesive layer to be less than or equal to 2 mu m, and performing pressure maintaining and cooling on the whole wafer sticking device 1 assembled together;
eighth, after the die bonding device 1 is cooled to room temperature, adjusting the pressure value of the pressure regulating valve to 0MPa; loosening 6 fixing screws on the pressing head 1-3, taking down the pressing head 1-3, and taking out the ceramic disc from the base 1-4;
ninth, scrubbing and cleaning residual wax on the surface and the edge of the aluminum nitride wafer 2 by using a dust-free cloth dipped with alcohol;
tenth, grinding the adhered aluminum nitride wafer 2 by using a grinder;
eleventh, after finishing grinding, placing the ceramic disc on a heating table, setting the temperature of the heating table to be 85 ℃, sequentially taking out the aluminum nitride wafer 2 from the holes in the wafer holes 1-1-2, and cleaning the aluminum nitride wafer 2;
twelfth, the surface B of the wafer 2 processed in the cleaning step is faced downward, the aluminum nitride wafer 2 is bonded, and the surface a of the aluminum nitride wafer 2 is subjected to subsequent polishing, and the polishing of both the surface B and the surface a of the aluminum nitride wafer is completed in the same manner as in the fourth to eleventh steps.
Table 1 shows the results of the process compared with the results of the manual wax sticking process.
Table 1 comparison of the results of the three processes
As can be seen from Table 1, when the method of the present invention is used for grinding/thinning/polishing wafers, the thickness deviation and TTV between wafers are less than or equal to 3 μm, which are equivalent to the results obtained by using a commercial automatic wax bonding machine, and the result is superior to the conventional manual wax bonding, and the method is more suitable for the wafer bonding processing of small-size wafers.
Claims (10)
1. A wafer bonding method characterized by the steps of: firstly, selecting a plurality of wafers (2) as wafers to be processed;
secondly, selecting a template (1-1) of the wafer bonding device (1) according to the size of the wafer (2) to be processed;
thirdly, adhering the template (1-1) to the carrying disc (1-2) by using an adhesive (3) with the melting point of more than 90 ℃;
fourthly, placing the base (1-4) of the sticking device (1) on a heating table, placing the carrying disc (1-2) at the right center of the base (1-4), setting the temperature of the heating table to be 50-90 ℃, and sequentially coating the adhesive (3) into a plurality of wafer holes (1-1-2) on the carrying disc (1-2);
fifthly, placing the A faces of the wafers (2) downwards on the adhesive (3) in each wafer hole (1-1-2) in sequence;
step six, covering a layer of paper above the carrying disc (1-2), and assembling the pressure head (1-3) of the sticking device (1) and the base (1-4) together;
seventh, pressurizing the pressure head (1-3), and blowing air to the rubber (1-3-2) of the pressure head (1-3) to extrude the B surface of the wafer (2) in the first stage; pressurizing the pressure head (1-3) again, blowing air to the rubber (1-3-2) to extrude the B surface of the wafer (2) in the second stage, and extruding in the second stage, wherein the thickness deviation of the adhesive layer is less than or equal to 2 mu m; moving the integrated adhesive sheet devices to a cooling table for cooling;
eighth, after the bonding device is cooled to room temperature, adjusting the pressure indication value to 0MPa; taking down the pressure head (1-3), and taking out the carrying disc (1-2) from the base (1-4);
ninth, carrying out subsequent grinding or thinning or polishing working procedure treatment on the B surface of the bonded wafer (2);
tenth, after finishing the B-surface grinding or thinning or polishing process of the wafer (2), placing the carrying disc (1-2) on a heating table, setting the temperature of the heating table to be 50-90 ℃, sequentially taking out a plurality of wafers from a plurality of wafer holes (1-1-2), and cleaning the wafers;
eleventh, the surface B of the cleaned wafer (2) faces downwards, the wafer is stuck, and the surface A of the wafer (2) is subjected to subsequent grinding or thinning or polishing procedures, and the method is the same as that of the fourth to tenth steps, so that the grinding or thinning or polishing processing of the surface B and the surface A of the wafer (2) is completed.
2. The method according to claim 1, wherein the pressure indication value of the first stage extrusion in the seventh step is 0.02mpa to 0.1mpa, and 15s to 90s is maintained; the pressure indication value of the extrusion in the second stage is 0.1-0.28 MPa, and the extrusion is maintained for 3-30 min.
3. A wafer bonding method according to claim 1, characterized in that the adhesive (3) is wax or glue.
4. A wafer bonding method according to claim 1, characterized in that the sixth step is to cover a layer of paper on top of the carrier plate (1-2) as waxed paper or filter paper or dust-free cloth.
5. A wafer bonding method according to claim 1, characterized in that the carrier plate (1-2) is a quartz plate or a ceramic plate.
6. A die bonding apparatus, characterized in that: the die bonding device (1) comprises a die plate (1-1), a carrying disc (1-2), a pressing head (1-3) and a base (1-4); the template (1-1) is arranged on the carrying disc (1-2), the carrying disc (1-2) is arranged in the base (1-4), and the pressure head (1-3) is fixed on the base (1-4).
7. A die bonding apparatus according to claim 6, wherein: the template (1-1) is a circular plate, a locating hole (1-1-1) is formed in the center of the template (1-1), a plurality of wafer holes (1-1-2) are formed in the plate surface along the edge of the template (1-1) at intervals, wax guide grooves (1-1-3) are formed in the centers of four symmetrical shafts of the wafer holes (1-1-2), and the wafer holes (1-1-2) are communicated with the wax guide grooves (1-1-3).
8. A die bonding apparatus according to claim 7, wherein: the diameter of the template (1-1) is phi 82 mm-phi 200mm, the size of the wafer hole (1-1-2) is 10.1mm multiplied by 10.1mm or 15.1mm multiplied by 15.1mm or 20.1mm multiplied by 20.1mm or 25.1mm multiplied by 25.1mm square holes or phi 10.1 mm-phi 50.9mm round holes, and the diameter of the positioning hole (1-1-1) is phi 1.0 mm-2.0 mm.
9. A die bonding apparatus according to claim 6, wherein the thickness of said die plate (1-1) =wafer target thickness +10μm; the template (1-1) is made of plastic or resin or polymer composite material or stainless steel.
10. A die bonding apparatus according to claim 6, wherein: the pressure head (1-3) comprises a pressure head ring (1-3-1), a rubber (1-3-2) and a fixing ring (1-3-3), wherein a pressure hollow pipe (1-3-4) is arranged outside the pressure head (1-3), the rubber (1-3-2) is fixed in the pressure head ring (1-3-1) through the fixing ring (1-3-3), the pressure hollow pipe (1-3-4) is communicated with an inner cavity of the rubber (1-3-2), two positioning pin holes (1-3-1-1) and a plurality of screw holes (1-3-1-2) are formed in the pressure head ring (1-3-1), and the two positioning pin holes (1-3-1-1) are arranged at intervals.
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| CN210058835U (en) * | 2019-05-20 | 2020-02-14 | 青岛鑫嘉星电子科技股份有限公司 | Silicon carbide wafer wax sticking device |
| CN115302344A (en) * | 2022-09-29 | 2022-11-08 | 中国电子科技集团公司第四十六研究所 | Grinding method of small-size soft and brittle crystal material wafer |
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| JPH11277419A (en) * | 1998-03-31 | 1999-10-12 | Shin Etsu Handotai Co Ltd | Method of correcting flatness of backing pad |
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