CN115302344A - Grinding method of small-size soft and brittle crystal material wafer - Google Patents
Grinding method of small-size soft and brittle crystal material wafer Download PDFInfo
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- CN115302344A CN115302344A CN202211194548.5A CN202211194548A CN115302344A CN 115302344 A CN115302344 A CN 115302344A CN 202211194548 A CN202211194548 A CN 202211194548A CN 115302344 A CN115302344 A CN 115302344A
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000463 material Substances 0.000 title claims abstract description 27
- 239000013078 crystal Substances 0.000 title claims abstract description 20
- 235000012431 wafers Nutrition 0.000 claims abstract description 149
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 239000012530 fluid Substances 0.000 claims abstract description 5
- 239000010453 quartz Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 238000001816 cooling Methods 0.000 claims description 18
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000012216 screening Methods 0.000 claims description 2
- 239000003082 abrasive agent Substances 0.000 claims 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 1
- 229920006335 epoxy glue Polymers 0.000 claims 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 19
- 229910001195 gallium oxide Inorganic materials 0.000 description 19
- 238000005498 polishing Methods 0.000 description 10
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention relates to a grinding method of a small-size soft and brittle crystal material wafer, which comprises the following steps of placing a carrying disc on a heating table for preheating; adhering at least 3 supporting wafers to the edge of the carrying disc at intervals; placing the carrying disc on a heating table for preheating, and pasting a plurality of wafers to be processed on the carrying disc among at least 3 supporting wafers at intervals; grinding the surface B of the wafer to be processed on a grinding machine by adopting grinding fluid, taking down the wafer to be processed when the thickness of the surface B of the wafer to be processed is consistent with that of the supporting wafer, and removing wax and cleaning; by adopting the method, when the A surface of the wafer to be processed is ground to be consistent with the thickness of the edge supporting wafer, the wafer to be processed is taken down, and the wafer to be processed is cleaned by dewaxing, thus finishing the grinding of the wafer to be processed. When the invention is adopted to grind the wafers, the thickness deviation of the wafers in the same disc is less than or equal to 3 mu m, the target thickness control precision of the wafers can reach +/-5 mu m, and the consistency and the stability of the wafer thickness batches are effectively ensured.
Description
Technical Field
The invention relates to a grinding method of a small-size soft and brittle crystal material wafer, belonging to the field of processing of semiconductor materials.
Background
In order to realize the excellent characteristics of the soft brittle crystal materials such as gallium oxide, indium antimonide, cadmium sulfide, gallium antimonide, cadmium selenide and the like which are used as semiconductor materials, the polishing sheet with perfect surface quality is obtained by sequentially carrying out the following working procedures. A slicing step of slicing the ingot with a wire saw; grinding, namely removing the line marks and the unevenness on the surface of the cutting blade to reach the vicinity of the target thickness; and a polishing step of eliminating a damaged layer and scratches on the wafer surface after grinding to realize a defect-free and highly flat wafer surface. The grinding process is an intermediate step of carrying cutting and polishing, plays a role of 'starting and stopping', and has high application value in researching and perfecting the processing technology of the soft and brittle crystal material.
The grinding process of gallium oxide and cadmium sulfide adopts a single-side processing technology, i.e. quartz wax is used for bonding one side of a wafer on a carrying disc, and the other side is ground. Due to the low hardness of the crystal, the grinding removal rate of the wafer is fast, and the TTV and target thickness control of the ground wafer are extremely difficult. In order to ensure the TTV and the target thickness of the polished wafer, a precise polishing jig is required to control the polishing process, and although the precision of the wafer processed by the precise polishing jig can be high, two problems are also caused when the precise polishing jig is used: firstly, the processing precision of the wafer directly depends on the adjusting precision of the clamp, and if the adjusting of the clamp has errors, the processed wafer can be directly scrapped; secondly, because the precision of the grinding fixture is difficult to measure directly, the data of the ground sheet after finishing is needed to be verified, so that the finishing process of the grinding fixture is complicated, and the processing efficiency is seriously influenced.
Disclosure of Invention
In view of the problems of difficult control of TTV of the wafer and high dependence on a precision grinding clamp in the prior art during grinding of the soft and brittle materials, the invention provides the grinding method of the small-size soft and brittle crystal material wafer, which can effectively shorten the processing time, reduce the dependence on the precision grinding clamp and greatly reduce the processing cost of the wafer on the premise of ensuring the TTV of the ground wafer and the target thickness.
In order to achieve the purpose, the invention adopts the technical scheme that: a grinding method of a small-size soft and brittle crystal material wafer comprises the following steps: step 1, screening the cut wafers, and selecting a plurality of wafers to be processed according to the size and the thickness of the wafers; step 2, placing the carrying disc on a heating table for preheating, wherein the flatness of the carrying disc is 1-3 mu m, the diameter of the carrying disc is phi 83-phi 138mm, and the preheating temperature of the carrying disc is 70-120 ℃; step 3, adhering at least 3 supporting wafers to the edge of the carrying disc at intervals by using an adhesive, and pressurizing and cooling by using a wax adhering device with a cooling table, wherein the softening temperature of the adhesive is 65-120 ℃; step 4, placing the carrying disc obtained in the step 3 on a heating table for preheating, and adhering the surfaces A of a plurality of wafers to be processed to the carrying disc among at least 3 supporting wafers at intervals by using an adhesive, wherein the preheating temperature of the carrying disc is 45-60 ℃; the softening temperature of the adhesive is 45-59 ℃, and a wax sticking device with a cooling table is adopted for pressurizing and cooling; and 5, grinding the surface B of the wafer to be processed on a grinding machine by adopting grinding fluid, wherein the average grain diameter of a grinding material in the grinding fluid is 0.5-7 mu m, and the grinding pressure is 20g/cm 2 ~300g/cm 2 The rotating speed of the grinding machine ranges from 5rpm to 60rpm; step 6, when the thickness of the B surface of the wafer to be processed is ground to be consistent with that of the supporting wafer, the loading disc is addedHeating to 45-60 ℃, taking down the wafer to be processed, and removing wax and cleaning; step 7, adopting the steps 2 to 3, additionally taking at least 3 supporting wafers, and adhering the supporting wafers to the edge of the other carrying disc at intervals through adhesive; and (3) adhering the B surfaces of the wafers to be processed, which are taken down in the step (6), to a carrying disc among at least 3 supporting wafers at intervals by using the adhesive, heating the carrying disc to 45-60 ℃ when the A surfaces of the wafers to be processed are ground to be consistent with the thickness of the edge supporting wafers by adopting the methods in the steps (5) to (6), taking down the wafers to be processed, removing wax, cleaning and finishing the grinding of the wafers to be processed.
The carrying disc is a quartz disc or a ceramic carrying disc.
The material of the wafer to be processed is Ga 2 O 3 Or InSb or CdS or GaSb or CdSe.
The support wafer is made of SiC, sapphire, a ceramic wafer or diamond.
The supporting wafer is a square piece with the size of 10mm multiplied by 10mm or a square piece with the size of 15mm multiplied by 15mm or a round piece with the thickness of 10mm to 25mm, the thickness is 250 mu m to 800 mu m, and the TTV is 1 mu m to 5 mu m.
The thickness of the to-be-processed wafer is 260-950 mu m in a square sheet with the size of 10mm multiplied by 10mm or a square sheet with the size of 15mm multiplied by 15mm or a wafer with the size of phi 10-phi 25 mm.
The adhesive is solid wax or epoxy resin glue.
The abrasive is single crystal diamond or polycrystalline diamond or aluminum oxide or cerium oxide.
The invention has the following beneficial effects: the method solves the problem of large thickness deviation between the wafer inner and the wafer outer caused by the fast soft removing speed of the crystal material when the soft and crisp crystal material wafer is ground, solves the problem of poor target thickness control precision of the grinding wafer, and solves the problems of complicated adjusting process and heavy grinding head when a precise grinding head is adopted; the carrying disc adhered with the supporting wafer can be repeatedly used, the precision detection and the supporting sheet finishing of the carrying disc adhered with the supporting wafer are very simple and convenient, the processing time of the wafer is greatly shortened, and the processing efficiency is improved; when the method is adopted to grind the soft and brittle crystal material wafers, the thickness deviation of the wafers in the same disc is less than or equal to 3 microns, the target thickness control precision of the wafers can reach +/-5 microns, the consistency and the stability of the wafer thickness batches are effectively ensured, the wafer processing efficiency is improved, and the equipment cost for wafer processing is reduced.
Drawings
FIG. 1 is a schematic view of a support wafer of the present invention being distributed and affixed to a carrier plate;
FIG. 2 is a schematic view of the present invention illustrating the wafer to be processed being distributed and adhered to the carrier plate;
FIG. 3 is a schematic view of the present invention for cooling a wafer by applying pressure to the wafer by using a wax-sticking device with a cooling stage.
Detailed Description
Example 1, a method for grinding a small-sized wafer of soft and brittle crystalline material, comprising the steps of: step 1, selecting gallium oxide (Ga) with the size of 15mm multiplied by 15mm 2 O 3 ) The thickness of the wafer to be processed is 920 μm + -10 μm.
Step 2, preheating a quartz carrying disc with the diameter of 110mm to 110 ℃, pasting 3 SiC supporting wafers with the thickness of 780 mu m, the TTV of less than 2 mu m and the size of 15mm multiplied by 15mm onto the quartz carrying disc at intervals by adopting high-temperature solid wax, and pressurizing and cooling by adopting a wax pasting device with a cooling table as shown in figure 1, wherein the applied pressure is 1kg as shown in figure 3.
Step 3, preheating a quartz carrying disc to 60 ℃, and adopting quartz wax to paste the A surfaces of 9 gallium oxide wafers to be processed to the quartz carrying disc among the 3 SiC supporting wafers at intervals, as shown in figure 2; the wax was cooled under pressure using a wax-sticking apparatus with a cooling table, and the applied pressure was 1kg, as shown in FIG. 3.
Step 4, grinding the B surface of the wafer to be processed of 9 pieces of gallium oxide on a grinding machine by adopting an alumina grinding material with the average grain diameter of 7 mu m, wherein the pressure adopted during grinding is 30g/cm 2 The rotation speed used during the polishing was 20rpm, and the polishing was stopped when the thickness of the wafer to be processed of 9 pieces of gallium oxide was about 780 μm.
And step 5, heating the quartz carrier disc to 60 ℃, taking down 9 gallium oxide wafers to be processed, and removing wax and cleaning.
Step 6, adopting the steps 2 to 3, sticking the other 3 SiC supporting wafers with the size of 15mm multiplied by 15mm and the thickness of 660 mu m to the edge of the other quartz carrying disc at intervals by high-temperature solid wax, and sticking the B surfaces of the 9 pieces of gallium oxide wafers to be processed taken down in the step 5 to the quartz carrying discs among the 3 pieces of SiC supporting wafers at intervals by the quartz wax; grinding the A surfaces of 9 gallium oxide wafers to be processed to 660 mu m by adopting the methods from step 4 to step 5, and stopping grinding; and heating the quartz carrier disc to 60 ℃, taking down 9 wafers to be processed of the gallium oxide, removing wax, and cleaning to finish grinding the wafers to be processed of the gallium oxide.
Example 2, step 1, selection of gallium oxide (Ga) with a size of phi 25mm 2 O 3 ) The thickness of the wafer to be processed is 650 mu m +/-10 mu m.
Step 2, preheating a phi 138mm ceramic carrying disc to 69 ℃, adopting epoxy resin glue to paste 3 sapphire supporting wafers with the thickness of 530 microns and the TTV of less than 2 microns, and the size of phi 25mm onto the ceramic carrying disc at intervals, as shown in figure 1, adopting a wax sticking device with a cooling table to pressurize and cool, and applying pressure of 2.5kg, as shown in figure 3.
Step 3, preheating the ceramic carrying disc to 46 ℃, and adopting quartz wax to paste the A surfaces of 9 gallium oxide wafers to be processed to the ceramic carrying disc among the 3 sapphire supporting wafers at intervals, as shown in figure 2; the wax was cooled under pressure using a wax-sticking apparatus with a cooling table, and the applied pressure was 2.5kg, as shown in FIG. 3.
Step 4, grinding the B surface of the wafer to be processed of 9 pieces of gallium oxide on a grinding machine by using polycrystalline diamond grinding material with the average grain diameter of 0.5 mu m, wherein the pressure adopted during grinding is 280g/cm 2 The rotation speed used for polishing was 55rpm, and polishing was stopped when the thickness of the wafer reached about 530 μm.
And step 5, heating the ceramic carrying disc to 46 ℃, taking down 9 gallium oxide wafers to be processed, and removing wax and cleaning.
Step 6, adopting the steps 2 to 3, sticking another 3 pieces of sapphire supporting wafers with the diameter of 25mm and the thickness of 410 mu m to the edge of another ceramic carrying disc at intervals by high-temperature solid wax, and sticking the 9 pieces of gallium oxide to be added, which are taken off in the step 5The surface B of the worker wafer is adhered to a ceramic carrying disc among the supporting wafers of 3 pieces of sapphire at intervals through quartz wax; grinding the A surfaces of 9 gallium oxide wafers to be processed to about 410 mu m by adopting the methods from step 4 to step 5, and stopping grinding; heating the carrier disc to 60 ℃, taking down 9 gallium oxide wafers to be processed, dewaxing and cleaning to finish the gallium oxide (Ga) 2 O 3 ) Grinding the wafer to be processed.
Example 3, step 1, a wafer to be processed of cadmium selenide (CdSe) with dimensions 10mm x 10mm is selected, with a thickness value of 520 μm ± 10 μm.
Step 2, preheating a quartz carrying disc with the diameter of 84mm to 90 ℃, pasting 3 sapphire supporting wafers with the thickness of 400 microns, the TTV of less than 2 microns and the size of 10mm multiplied by 10mm onto the quartz carrying disc at intervals by adopting high-temperature solid wax, pressurizing and cooling by adopting a wax sticking device with a cooling table as shown in figure 1, and applying the pressure of 1.5kg as shown in figure 3. Step 3, preheating a quartz carrying disc to 60 ℃, and pasting 9 cadmium selenide wafers to be processed on the quartz carrying disc among the 3 sapphire supporting wafers at intervals by adopting quartz wax, as shown in fig. 2; the wax was cooled under pressure using a wax-sticking apparatus with a cooling table, applying a pressure of 1.5kg, as shown in FIG. 3.
Step 4, grinding the B surface of the cadmium selenide wafer to be processed on a grinding machine by adopting cerium oxide abrasive with the average grain diameter of 5 mu m, wherein the pressure adopted during grinding is 150g/cm 2 And the rotation speed adopted during grinding is 40rpm, and when the thickness of the 9 cadmium selenide wafers to be processed reaches about 400 mu m, the grinding is stopped.
And step 5, heating the quartz carrying disc to 60 ℃, taking down 9 cadmium selenide wafers to be processed, and removing wax and cleaning.
Step 6, adopting the steps 2 to 3, sticking the other 3 sapphire support wafers with the size of 10mm multiplied by 10mm and the thickness of 270 mu m to the edge of the other quartz carrying disc at intervals by high-temperature solid wax, and sticking the B surfaces of the 9 cadmium selenide wafers to be processed taken down in the step 5 to the quartz carrying disc between the 3 sapphire support wafers at intervals by the quartz wax; grinding the A surface of the 9 cadmium selenide wafers to be processed to about 270 mu m by adopting the method from the step 4 to the step 5, and stopping grinding; and heating the carrier disc to 60 ℃, taking down 9 cadmium selenide wafers to be processed, dewaxing and cleaning to finish grinding the cadmium selenide wafers to be processed.
The above embodiment shows a processing method of 9 wafers to be processed, if a small-sized wafer to be processed is pasted on a large-diameter carrier plate, the pasting and processing quantity of the wafer to be processed can be increased, for example, 12 wafers to be processed with the diameter of 10mm × 10mm can be pasted on a quartz carrier plate with the diameter of 110 mm.
Table 1 shows the results of the present and conventional methods and the process using the precision grinding jig vs. table 1.
TABLE 1 comparison of the results of the three processes
As can be seen from Table 1, when the wafer is ground by the method of the present invention, both the inter-wafer thickness deviation and the intra-wafer thickness deviation of the processed wafer are less than or equal to 3 μm, which is equivalent to the result obtained by using a precision grinding jig, and the result is superior to that of the conventional method; the method has higher processing efficiency than the method adopting a precision grinding fixture.
Claims (8)
1. A grinding method of a small-size soft and brittle crystal material wafer is characterized by comprising the following steps:
step 1, screening the cut wafers, and selecting a plurality of wafers to be processed according to the size and the thickness of the wafers;
step 2, placing the carrying disc on a heating table for preheating, wherein the flatness of the carrying disc is 1-3 mu m, the diameter of the carrying disc is phi 83-phi 138mm, and the preheating temperature of the carrying disc is 70-120 ℃;
step 3, adhering at least 3 supporting wafers to the edge of the carrying disc at intervals by using an adhesive, and pressurizing and cooling by using a wax adhering device with a cooling table, wherein the softening temperature of the adhesive is 65-120 ℃;
step 4, placing the carrying disc in the step 3 on a heating table for preheating, and adhering the surfaces A of a plurality of wafers to be processed to the carrying disc among at least 3 supporting wafers at intervals by using an adhesive, wherein the preheating temperature of the carrying disc is 45-60 ℃; the softening temperature of the adhesive is 45-59 ℃, and a wax sticking device with a cooling table is adopted for pressurizing and cooling;
and 5, grinding the surface B of the wafer to be processed on a grinding machine by adopting grinding fluid, wherein the average grain diameter of the grinding material in the grinding fluid is 0.5-7 mu m, and the grinding pressure is 20g/cm 2 ~300g/cm 2 The rotation speed of the grinding machine is 5rpm to 60rpm;
step 6, when the thickness of the B surface of the wafer to be processed is ground to be consistent with that of the supporting wafer, heating the carrying disc to 45-60 ℃, taking down the wafer to be processed, and removing wax and cleaning;
step 7, adopting the steps 2 to 3, additionally taking at least 3 supporting wafers, and adhering the supporting wafers to the edge of the other carrying disc at intervals through adhesive; and (3) adhering the B surfaces of the wafers to be processed, which are taken down in the step (6), to a carrying disc among at least 3 supporting wafers at intervals by using the adhesive, heating the carrying disc to 45-60 ℃ when the A surfaces of the wafers to be processed are ground to be consistent with the thickness of the edge supporting wafers by adopting the methods in the steps (5) to (6), taking down the wafers to be processed, removing wax, cleaning and finishing the grinding of the wafers to be processed.
2. A method for grinding small-size soft and brittle crystal material wafer as claimed in claim 1, characterized in that the carrier plate is a quartz plate or a ceramic carrier plate.
3. The method for grinding small-size soft and brittle crystal material wafer according to claim 1, characterized in that the material of the wafer to be processed is Ga 2 O 3 Or InSb or CdS or GaSb or CdSe.
4. The method for grinding small-size soft and brittle crystal material wafer as claimed in claim 1, characterized in that the material of the support wafer is SiC or sapphire or ceramic wafer or diamond.
5. A method for grinding small-size soft and brittle crystal material wafer as claimed in claim 1, characterized in that the support wafer has a size of 10mm x 10mm square or 15mm x 15mm square or phi 10mm to phi 25mm round, a thickness of 250 μm to 800 μm and a TTV of 1 μm to 5 μm.
6. The method for grinding small-size soft and brittle crystal material wafer as claimed in claim 1, characterized in that the wafer to be processed is a square piece with the size of 10mm x 10mm or a square piece with the size of 15mm x 15mm or a circular piece with the thickness of 10 mm-25 mm, and the thickness is 260 μm-950 μm.
7. A method as claimed in claim 1, wherein said adhesive is solid wax or epoxy glue.
8. A method as claimed in claim 1, wherein said abrasive material is single crystal diamond or polycrystalline diamond or alumina or ceria.
Priority Applications (1)
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CN202211194548.5A CN115302344B (en) | 2022-09-29 | 2022-09-29 | Grinding method of small-size soft and brittle crystal material wafer |
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CN202211194548.5A CN115302344B (en) | 2022-09-29 | 2022-09-29 | Grinding method of small-size soft and brittle crystal material wafer |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117733719A (en) * | 2024-02-21 | 2024-03-22 | 北京特思迪半导体设备有限公司 | Polishing method of gallium antimonide wafer and gallium antimonide polishing sheet prepared by polishing method |
CN117810156A (en) * | 2024-02-23 | 2024-04-02 | 中国电子科技集团公司第四十六研究所 | Wafer bonding method and wafer bonding device |
CN117810156B (en) * | 2024-02-23 | 2024-07-05 | 中国电子科技集团公司第四十六研究所 | Wafer bonding method and wafer bonding device |
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JPH0775964A (en) * | 1993-09-10 | 1995-03-20 | Nippon Steel Corp | Wafer polishing device |
JPH11333708A (en) * | 1998-06-01 | 1999-12-07 | Shin Etsu Handotai Co Ltd | Device and method for lapping |
CN1927540A (en) * | 2006-09-05 | 2007-03-14 | 大连理工大学 | Slice sticking method for hard brittle crystal thin substrate grinding and polishing |
CN101504913A (en) * | 2006-07-12 | 2009-08-12 | 住友电气工业株式会社 | Method of producing group III nitride substrate wafers and group III nitride substrate wafers |
CN105058223A (en) * | 2015-07-15 | 2015-11-18 | 中国电子科技集团公司第四十六研究所 | Single-side grinding method for germanium single crystal wafer |
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JPH0775964A (en) * | 1993-09-10 | 1995-03-20 | Nippon Steel Corp | Wafer polishing device |
JPH11333708A (en) * | 1998-06-01 | 1999-12-07 | Shin Etsu Handotai Co Ltd | Device and method for lapping |
CN101504913A (en) * | 2006-07-12 | 2009-08-12 | 住友电气工业株式会社 | Method of producing group III nitride substrate wafers and group III nitride substrate wafers |
CN1927540A (en) * | 2006-09-05 | 2007-03-14 | 大连理工大学 | Slice sticking method for hard brittle crystal thin substrate grinding and polishing |
CN105058223A (en) * | 2015-07-15 | 2015-11-18 | 中国电子科技集团公司第四十六研究所 | Single-side grinding method for germanium single crystal wafer |
Cited By (4)
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CN117733719A (en) * | 2024-02-21 | 2024-03-22 | 北京特思迪半导体设备有限公司 | Polishing method of gallium antimonide wafer and gallium antimonide polishing sheet prepared by polishing method |
CN117733719B (en) * | 2024-02-21 | 2024-05-03 | 北京特思迪半导体设备有限公司 | Polishing method of gallium antimonide wafer and gallium antimonide polishing sheet prepared by polishing method |
CN117810156A (en) * | 2024-02-23 | 2024-04-02 | 中国电子科技集团公司第四十六研究所 | Wafer bonding method and wafer bonding device |
CN117810156B (en) * | 2024-02-23 | 2024-07-05 | 中国电子科技集团公司第四十六研究所 | Wafer bonding method and wafer bonding device |
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