CN115302344B - Grinding method of small-size soft and brittle crystal material wafer - Google Patents

Grinding method of small-size soft and brittle crystal material wafer Download PDF

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Publication number
CN115302344B
CN115302344B CN202211194548.5A CN202211194548A CN115302344B CN 115302344 B CN115302344 B CN 115302344B CN 202211194548 A CN202211194548 A CN 202211194548A CN 115302344 B CN115302344 B CN 115302344B
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wafer
processed
wafers
carrying disc
grinding
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CN115302344A (en
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高飞
边子夫
王英明
王健
霍晓青
李晖
李宝珠
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CETC 46 Research Institute
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/068—Table-like supports for panels, sheets or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

The invention relates to a grinding method of a small-size soft and brittle crystal material wafer, which comprises the following steps of placing a carrying disc on a heating table for preheating; adhering at least 3 supporting wafers to the edge of the carrying disc at intervals; placing the carrying disc on a heating table for preheating, and pasting a plurality of wafers to be processed on the carrying disc among at least 3 supporting wafers at intervals; grinding the surface B of the wafer to be processed on a grinding machine by adopting grinding fluid, taking down the wafer to be processed when the thickness of the surface B of the wafer to be processed is consistent with that of the supporting wafer, and removing wax and cleaning; by adopting the method, when the A surface of the wafer to be processed is ground to be consistent with the thickness of the edge supporting wafer, the wafer to be processed is taken down, and the wafer to be processed is cleaned by removing wax to finish the grinding of the wafer to be processed. When the invention is adopted to grind the wafers, the thickness deviation of the wafers in the same disc is less than or equal to 3 mu m, the target thickness control precision of the wafers can reach +/-5 mu m, and the consistency and the stability of the wafer thickness batch are effectively ensured.

Description

Grinding method of small-size soft and brittle crystal material wafer
Technical Field
The invention relates to a grinding method of a small-size soft and brittle crystal material wafer, belonging to the field of processing of semiconductor materials.
Background
In order to realize the excellent characteristics of the soft and brittle crystal materials such as gallium oxide, indium antimonide, cadmium sulfide, gallium antimonide, cadmium selenide and the like which are used as semiconductor materials, the polishing sheet with perfect surface quality is obtained through the following procedures in sequence. A slicing step of slicing the ingot with a wire saw; grinding, namely removing the line marks and the unevenness on the surface of the cutting blade to reach the vicinity of the target thickness; and a polishing step of removing a damaged layer and scratches on the surface of the wafer after grinding to realize a defect-free and highly flat surface of the wafer. The grinding process is an intermediate step of carrying cutting and polishing, plays a role of 'starting and stopping', and has high application value in researching and perfecting the processing technology of the soft and brittle crystal material.
The grinding process of gallium oxide and cadmium sulfide adopts a single-side processing technology, i.e. quartz wax is used for bonding one side of a wafer on a carrying disc, and the other side is ground. Due to the low hardness of the crystal, the removal rate of the wafer by grinding is fast, and the TTV and target thickness control of the ground wafer is extremely difficult. In order to ensure the TTV and the target thickness of the polished wafer, a precise polishing jig is required to control the polishing process, and although the precision of the polished wafer can be improved, two problems are also encountered when using the precise polishing jig: firstly, the processing precision of the wafer directly depends on the adjusting precision of the clamp, and if the adjustment of the clamp has errors, the processed wafer can be directly scrapped; secondly, because the precision of the grinding fixture is difficult to measure directly, the data of the ground sheet after finishing is needed to be verified, so that the finishing process of the grinding fixture is complicated, and the processing efficiency is seriously influenced.
Disclosure of Invention
In view of the problems of difficult control of TTV of the wafer and high dependence on a precision grinding clamp in the prior art during grinding of the soft and brittle materials, the invention provides the grinding method of the small-size soft and brittle crystal material wafer, which can effectively shorten the processing time, reduce the dependence on the precision grinding clamp and greatly reduce the processing cost of the wafer on the premise of ensuring the TTV of the ground wafer and the target thickness.
In order to achieve the purpose, the invention adopts the technical scheme that: grinding of small-size soft and brittle crystal material waferThe grinding method comprises the following steps: step 1, screening the cut wafers, and selecting a plurality of wafers to be processed according to the size and the thickness of the wafers; step 2, placing the carrying disc on a heating table for preheating, wherein the flatness of the carrying disc is 1-3 mu m, the diameter of the carrying disc is phi 83-phi 138mm, and the preheating temperature of the carrying disc is 70-120 ℃; step 3, adhering at least 3 supporting wafers to the edge of the carrying disc at intervals by using an adhesive, and pressurizing and cooling by using a wax adhering device with a cooling table, wherein the softening temperature of the adhesive is 65-120 ℃; step 4, placing the carrying disc obtained in the step 3 on a heating table for preheating, and adhering the surfaces A of a plurality of wafers to be processed to the carrying disc among at least 3 supporting wafers at intervals by using an adhesive, wherein the preheating temperature of the carrying disc is 45-60 ℃; the softening temperature of the adhesive is 45-59 ℃, and a wax sticking device with a cooling table is adopted for pressurizing and cooling; and 5, grinding the surface B of the wafer to be processed on a grinding machine by adopting grinding fluid, wherein the average grain diameter of the grinding material in the grinding fluid is 0.5-7 mu m, and the grinding pressure is 20g/cm 2 ~300g/cm 2 The rotating speed of the grinding machine ranges from 5rpm to 60rpm; step 6, when the thickness of the B surface of the wafer to be processed is ground to be consistent with that of the supporting wafer, heating the carrying disc to 45-60 ℃, taking down the wafer to be processed, and removing wax and cleaning; step 7, adopting the steps 2 to 3, additionally taking at least 3 supporting wafers, and adhering the supporting wafers to the edge of the other carrying disc at intervals through adhesive; and (3) adhering the surfaces B of the wafers to be processed, which are taken down in the step (6), to a carrying disc among at least 3 supporting wafers at intervals by using the adhesive, heating the carrying disc to 45-60 ℃ when the surfaces A of the wafers to be processed are ground to be consistent with the thickness of the edge supporting wafers by adopting the methods from the step (5) to the step (6), taking down the wafers to be processed, removing wax and cleaning, and finishing the grinding of the wafers to be processed.
The carrying disc is a quartz disc or a ceramic carrying disc.
The material of the wafer to be processed is Ga 2 O 3 Or InSb or CdS or GaSb or CdSe.
The supporting wafer is made of SiC, sapphire, a ceramic wafer or diamond.
The supporting wafer is a square sheet with the size of 10mm multiplied by 10mm, a square sheet with the size of 15mm multiplied by 15mm, or a round sheet with the size of 10mm to 25mm, the thickness is 250 mu m to 800 mu m, and the TTV is 1 mu m to 5 mu m.
The thickness of the to-be-processed wafer is 260-950 mu m in a square sheet with the size of 10mm multiplied by 10mm or a square sheet with the size of 15mm multiplied by 15mm or a wafer with the size of phi 10-phi 25 mm.
The adhesive is solid wax or epoxy resin glue.
The abrasive is single crystal diamond or polycrystalline diamond or aluminum oxide or cerium oxide.
The invention has the following beneficial effects: the method solves the problem of large thickness deviation in and among the wafers caused by high soft removal rate of the crystal material when the soft and brittle crystal material wafers are ground, solves the problem of poor target thickness control precision of the grinding wafer, and solves the problems of complicated adjusting process and heavy grinding head when a precise grinding head is adopted; the carrying disc adhered with the supporting wafer can be repeatedly used, the precision detection and the supporting sheet finishing of the carrying disc adhered with the supporting wafer are very simple and convenient, the processing time of the wafer is greatly shortened, and the processing efficiency is improved; when the method is adopted to grind the soft and brittle crystal material wafers, the thickness deviation of the wafers in the same disc is less than or equal to 3 microns, the target thickness control precision of the wafers can reach +/-5 microns, the consistency and the stability of the wafer thickness batches are effectively ensured, the wafer processing efficiency is improved, and the equipment cost for wafer processing is reduced.
Drawings
FIG. 1 is a schematic view of a support wafer of the present invention being distributed and affixed to a carrier plate;
FIG. 2 is a schematic view of the present invention illustrating the wafer to be processed being distributed and adhered to the carrier plate;
FIG. 3 is a schematic view of the present invention for cooling a wafer by applying pressure to the wafer by using a wax-adhering device with a cooling stage.
Detailed Description
Example 1, a method for grinding a small-sized wafer of soft and brittle crystalline material, comprising the steps of: step 1, selecting gallium oxide (Ga) with the size of 15mm multiplied by 15mm 2 O 3 ) The thickness of the wafer to be processed is 920 μm + -10 μm.
Step 2, preheating a quartz carrying disc with the diameter of 110mm to 110 ℃, pasting 3 SiC supporting wafers with the thickness of 780 mu m, the TTV of less than 2 mu m and the size of 15mm multiplied by 15mm onto the quartz carrying disc at intervals by adopting high-temperature solid wax, and pressurizing and cooling by adopting a wax pasting device with a cooling table as shown in figure 1, wherein the applied pressure is 1kg as shown in figure 3.
Step 3, preheating a quartz carrying disc to 60 ℃, and adopting quartz wax to paste the A surfaces of 9 gallium oxide wafers to be processed to the quartz carrying disc among the 3 SiC supporting wafers at intervals, as shown in figure 2; the wax was cooled under pressure using a wax-sticking apparatus with a cooling table, and the applied pressure was 1kg, as shown in FIG. 3.
Step 4, grinding the B surface of the to-be-processed wafer of 9 gallium oxides on a grinding machine by adopting an alumina grinding material with the average grain diameter of 7 mu m, wherein the pressure adopted during grinding is 30g/cm 2 The rotation speed used during the polishing was 20rpm, and the polishing was stopped when the thickness of the wafer to be processed of 9 pieces of gallium oxide was about 780 μm.
And step 5, heating the quartz carrier disc to 60 ℃, taking down 9 wafers to be processed of gallium oxide, and removing wax and cleaning.
Step 6, adopting the steps 2 to 3, sticking the other 3 SiC supporting wafers with the size of 15mm multiplied by 15mm and the thickness of 660 mu m to the edge of the other quartz carrying disc at intervals by high-temperature solid wax, and sticking the B surfaces of the 9 pieces of gallium oxide wafers to be processed taken down in the step 5 to the quartz carrying discs among the 3 pieces of SiC supporting wafers at intervals by the quartz wax; grinding the A surfaces of 9 gallium oxide wafers to be processed to 660 mu m by adopting the methods from step 4 to step 5, and stopping grinding; and heating the quartz carrier disc to 60 ℃, taking down 9 wafers to be processed of the gallium oxide, removing wax, and cleaning to finish grinding the wafers to be processed of the gallium oxide.
Example 2, step 1, gallium oxide (Ga) with a size of phi 25mm is selected 2 O 3 ) The thickness of the wafer to be processed is 650 mu m +/-10 mu m.
Step 2, preheating a phi 138mm ceramic carrying disc to 69 ℃, adopting epoxy resin glue to paste 3 sapphire supporting wafers with the thickness of 530 microns and the TTV of less than 2 microns, and the size of phi 25mm onto the ceramic carrying disc at intervals, as shown in figure 1, adopting a wax sticking device with a cooling table to pressurize and cool, and applying pressure of 2.5kg, as shown in figure 3.
Step 3, preheating a ceramic carrying disc to 46 ℃, and sticking the A surfaces of 9 gallium oxide wafers to be processed to the ceramic carrying disc among 3 sapphire supporting wafers at intervals by adopting quartz wax, as shown in figure 2; the wax was cooled under pressure using a wax-sticking apparatus with a cooling table, and the applied pressure was 2.5kg, as shown in FIG. 3.
Step 4, grinding the B surface of the wafer to be processed of 9 pieces of gallium oxide on a grinding machine by using polycrystalline diamond grinding material with the average grain diameter of 0.5 mu m, wherein the pressure adopted during grinding is 280g/cm 2 The rotation speed used for polishing was 55rpm, and polishing was stopped when the thickness of the wafer reached about 530 μm.
And step 5, heating the ceramic carrying disc to 46 ℃, taking down 9 gallium oxide wafers to be processed, and removing wax and cleaning.
Step 6, adopting the steps 2 to 3, sticking the other 3 sapphire supporting wafers with the size of phi 25mm and the thickness of 410 mu m to the edge of the other ceramic carrying disc at intervals through high-temperature solid wax, and sticking the B surfaces of the 9 pieces of gallium oxide wafers to be processed, which are taken down in the step 5, to the ceramic carrying disc between the 3 pieces of sapphire supporting wafers at intervals through quartz wax; grinding the A surfaces of 9 gallium oxide wafers to be processed to about 410 mu m by adopting the method from the step 4 to the step 5, and stopping grinding; heating the carrier disc to 60 ℃, taking down 9 gallium oxide wafers to be processed, dewaxing and cleaning to finish the gallium oxide (Ga) 2 O 3 ) Grinding the wafer to be processed.
Example 3, step 1, a wafer to be processed of cadmium selenide (CdSe) with dimensions 10mm x 10mm is selected, with a thickness value of 520 μm ± 10 μm.
Step 2, preheating a quartz carrying disc with the diameter of 84mm to 90 ℃, sticking 3 sapphire supporting wafers with the thickness of 400 microns, the TTV of less than 2 microns and the size of 10mm multiplied by 10mm onto the quartz carrying disc at intervals by adopting high-temperature solid wax, and pressurizing and cooling by adopting a wax sticking device with a cooling table as shown in figure 1, wherein the applied pressure is 1.5kg as shown in figure 3. Step 3, preheating a quartz carrying disc to 60 ℃, and pasting 9 cadmium selenide wafers to be processed on the quartz carrying disc among the 3 sapphire supporting wafers at intervals by adopting quartz wax, as shown in figure 2; the wax was cooled under pressure using a wax-sticking apparatus with a cooling table, applying a pressure of 1.5kg, as shown in FIG. 3.
Step 4, grinding the B surface of the cadmium selenide wafer to be processed on a grinding machine by adopting cerium oxide abrasive with the average grain diameter of 5 mu m, wherein the pressure adopted during grinding is 150g/cm 2 And the rotation speed adopted during grinding is 40rpm, and when the thickness of the 9 cadmium selenide wafers to be processed reaches about 400 mu m, the grinding is stopped.
And step 5, heating the quartz carrying disc to 60 ℃, taking down 9 cadmium selenide wafers to be processed, and removing wax and cleaning.
Step 6, adopting the steps 2 to 3, sticking the other 3 sapphire supporting wafers with the size of 10mm multiplied by 10mm and the thickness of 270 mu m to the edge of the other quartz carrying disc at intervals by high-temperature solid wax, and sticking the B surfaces of the 9 cadmium selenide wafers to be processed, which are taken down in the step 5, to the quartz carrying disc between the 3 sapphire supporting wafers at intervals by the quartz wax; grinding the A surface of the wafer to be processed of 9 cadmium selenide slices to about 270 mu m by adopting the method from the step 4 to the step 5, and stopping grinding; and heating the carrier disc to 60 ℃, taking down 9 cadmium selenide wafers to be processed, dewaxing and cleaning to finish grinding the cadmium selenide wafers to be processed.
The above embodiment shows a processing method of 9 wafers to be processed, if a small-sized wafer to be processed is pasted on a large-diameter carrier plate, the pasting and processing quantity of the wafer to be processed can be increased, for example, 12 wafers to be processed with the diameter of 10mm × 10mm can be pasted on a quartz carrier plate with the diameter of 110 mm.
Table 1 shows the results of the process and the conventional process and the process using the precision grinding jig in table 1.
Table 1 comparison of three process results
Figure 578304DEST_PATH_IMAGE002
As can be seen from Table 1, when the wafer was ground by the method of the present invention, both the inter-wafer thickness variation and the intra-wafer thickness variation of the processed wafer were 3 μm or less, which is comparable to the results obtained by the precision grinding jig, and the results were superior to those of the conventional methods; the method has higher processing efficiency than the method adopting a precision grinding fixture.

Claims (1)

1. A grinding method of a small-size soft and brittle crystal material wafer is characterized by comprising the following steps:
step 1, screening the cut wafers, and selecting a plurality of wafers to be processed according to the size and the thickness of the wafers;
step 2, placing the carrying disc on a heating table for preheating, wherein the flatness of the carrying disc is 1-3 mu m, the diameter of the carrying disc is phi 83-phi 138mm, and the preheating temperature of the carrying disc is 70-120 ℃;
step 3, adhering at least 3 supporting wafers to the edge of the carrying disc at intervals by using an adhesive, and pressurizing and cooling by using a wax adhering device with a cooling table, wherein the softening temperature of the adhesive is 65-120 ℃;
step 4, placing the carrying disc obtained in the step 3 on a heating table for preheating, and adhering the surfaces A of a plurality of wafers to be processed to the carrying disc among at least 3 supporting wafers at intervals by using an adhesive, wherein the preheating temperature of the carrying disc is 45-60 ℃; the softening temperature of the adhesive is 45-59 ℃, and a wax sticking device with a cooling table is adopted for pressurizing and cooling;
and 5, grinding the surface B of the wafer to be processed on a grinding machine by adopting grinding fluid, wherein the average grain diameter of a grinding material in the grinding fluid is 0.5-7 mu m, and the grinding pressure is 20g/cm 2 ~300g/cm 2 The rotation speed of the grinding machine is 5rpm to 60rpm;
step 6, when the thickness of the B surface of the wafer to be processed is ground to be consistent with that of the supporting wafer, heating the carrying disc to 45-60 ℃, taking down the wafer to be processed, and removing wax and cleaning;
step 7, adopting the steps 2 to 3, additionally taking at least 3 supporting wafers, and adhering the supporting wafers to the edge of the other carrying disc at intervals through adhesive; adhering the B surfaces of the wafers to be processed, which are taken down in the step 6, to a carrying disc among at least 3 supporting wafers at intervals by using the adhesive, heating the carrying disc to 45-60 ℃ when the A surfaces of the wafers to be processed are ground to be consistent with the thickness of the edge supporting wafers by adopting the methods in the steps 5-6, taking down the wafers to be processed, removing wax, and cleaning to finish grinding the wafers to be processed;
the carrying disc is a quartz disc or a ceramic carrying disc;
the material of the wafer to be processed is Ga 2 O 3 Or InSb or CdS or GaSb or CdSe;
the supporting wafer is made of SiC, sapphire, a ceramic wafer or diamond;
the supporting wafer is a square sheet with the size of 10mm multiplied by 10mm, a square sheet with the size of 15mm multiplied by 15mm, or a round sheet with the size of 10mm to 25mm, the thickness is 250 mu m to 800 mu m, and the TTV is 1 mu m to 5 mu m;
the thickness of the wafer to be processed is 260-950 μm, and the size of the wafer to be processed is 10mm multiplied by 10mm square, 15mm multiplied by 15mm square or phi 10-phi 25mm wafer;
the adhesive is solid wax or epoxy resin glue;
the abrasive is single crystal diamond or polycrystalline diamond or aluminum oxide or cerium oxide.
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Publication number Priority date Publication date Assignee Title
CN117733719B (en) * 2024-02-21 2024-05-03 北京特思迪半导体设备有限公司 Polishing method of gallium antimonide wafer and gallium antimonide polishing sheet prepared by polishing method
CN117810156A (en) * 2024-02-23 2024-04-02 中国电子科技集团公司第四十六研究所 Wafer bonding method and wafer bonding device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0775964A (en) * 1993-09-10 1995-03-20 Nippon Steel Corp Wafer polishing device
JPH11333708A (en) * 1998-06-01 1999-12-07 Shin Etsu Handotai Co Ltd Device and method for lapping
CN1927540A (en) * 2006-09-05 2007-03-14 大连理工大学 Slice sticking method for hard brittle crystal thin substrate grinding and polishing
CN101504913A (en) * 2006-07-12 2009-08-12 住友电气工业株式会社 Method of producing group III nitride substrate wafers and group III nitride substrate wafers
CN105058223A (en) * 2015-07-15 2015-11-18 中国电子科技集团公司第四十六研究所 Single-side grinding method for germanium single crystal wafer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0775964A (en) * 1993-09-10 1995-03-20 Nippon Steel Corp Wafer polishing device
JPH11333708A (en) * 1998-06-01 1999-12-07 Shin Etsu Handotai Co Ltd Device and method for lapping
CN101504913A (en) * 2006-07-12 2009-08-12 住友电气工业株式会社 Method of producing group III nitride substrate wafers and group III nitride substrate wafers
CN1927540A (en) * 2006-09-05 2007-03-14 大连理工大学 Slice sticking method for hard brittle crystal thin substrate grinding and polishing
CN105058223A (en) * 2015-07-15 2015-11-18 中国电子科技集团公司第四十六研究所 Single-side grinding method for germanium single crystal wafer

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