CN117733719B - Polishing method of gallium antimonide wafer and gallium antimonide polishing sheet prepared by polishing method - Google Patents
Polishing method of gallium antimonide wafer and gallium antimonide polishing sheet prepared by polishing method Download PDFInfo
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- CN117733719B CN117733719B CN202410190646.4A CN202410190646A CN117733719B CN 117733719 B CN117733719 B CN 117733719B CN 202410190646 A CN202410190646 A CN 202410190646A CN 117733719 B CN117733719 B CN 117733719B
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- 238000005498 polishing Methods 0.000 title claims abstract description 407
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 title claims abstract description 155
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000004744 fabric Substances 0.000 claims abstract description 90
- 239000007788 liquid Substances 0.000 claims abstract description 70
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000460 chlorine Substances 0.000 claims abstract description 9
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 9
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 238000007517 polishing process Methods 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 239000002245 particle Substances 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 22
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 21
- 239000008367 deionised water Substances 0.000 claims description 21
- 229910021641 deionized water Inorganic materials 0.000 claims description 21
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 21
- 238000013016 damping Methods 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 238000001723 curing Methods 0.000 claims description 8
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 7
- LWXVCCOAQYNXNX-UHFFFAOYSA-N lithium hypochlorite Chemical compound [Li+].Cl[O-] LWXVCCOAQYNXNX-UHFFFAOYSA-N 0.000 claims description 4
- 238000001227 electron beam curing Methods 0.000 claims description 2
- 238000003847 radiation curing Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 141
- 238000012360 testing method Methods 0.000 description 34
- 239000007787 solid Substances 0.000 description 28
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 239000000919 ceramic Substances 0.000 description 14
- 230000001276 controlling effect Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a polishing method of a gallium antimonide wafer and a gallium antimonide polishing sheet prepared by the polishing method, the polishing method of the gallium antimonide wafer comprises the following steps: (1) Thinning the gallium antimonide wafer to remove uneven areas such as damage, high points and the like on the surface of the gallium antimonide wafer; (2) Carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting polishing cloth matched with middle polishing liquid; the medium polishing liquid comprises the following components in percentage by mass: 5-20% of alumina abrasive, 1-5% of chlorine-containing oxidant and the balance of water. The invention provides a novel polishing method of gallium antimonide wafers. The polishing of gallium antimonide wafers is achieved by a process route of polishing in a thinning combination.
Description
Technical Field
The invention relates to the technical field of processing of semiconductor materials, in particular to a polishing method of a gallium antimonide wafer and a gallium antimonide polished wafer prepared by the polishing method.
Background
Gallium antimonide (GaSb) is used as a direct band gap material, has the forbidden bandwidth of 0.725eV at room temperature, has the characteristics of high electron mobility and low power consumption, can be regulated within a wider range, and has excellent detection performance in a medium-long wave infrared band. Gallium antimonide is commonly used as a substrate material, and can be widely applied to industries such as infrared detectors, lasers, light-emitting diodes, optical communication, solar cells and the like.
The epitaxial device manufactured by growing high-quality epitaxy has high quality requirements on gallium antimonide substrate materials, and the substrate materials are required to have low defect density, high lattice integrity and an epitaxial buffer layer with atomic-level flatness, so that the high requirements on the surface quality of the gallium antimonide substrate, such as flatness, roughness and the like, are provided.
The gallium antimonide wafer has active chemical properties on the wafer surface, is easy to oxidize, has small hardness, crisp texture and easy scratch generation, so that finer and softer grinding particles and a polishing pad are used together with weaker chemical corrosive agents in the current polishing process, and the problems of scratch generation and wafer damage, low polishing efficiency of the GaSb wafer, high consumption of consumable materials such as polishing liquid and the like can be avoided to a certain extent. Therefore, how to select a proper polishing process to polish the gallium antimonide wafer with high efficiency is a problem of urgent research at present.
Disclosure of Invention
In order to solve one of the above problems in the prior art, the present invention provides a polishing method for gallium antimonide wafers and a gallium antimonide polishing sheet.
A method of polishing a gallium antimonide wafer comprising the steps of:
(1) Thinning the gallium antimonide wafer to remove uneven areas such as damage and high points on the surface of the gallium antimonide wafer;
(2) Carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting polishing cloth matched with middle polishing liquid;
The medium polishing liquid comprises the following components in percentage by mass: 5-20% of alumina abrasive, 1-5% of chlorine-containing oxidant and the balance of water.
As a specific embodiment of the present invention, the alumina abrasive has a particle size of 80 to 350nm.
As a specific embodiment of the present invention, the alumina abrasive has a particle size of 150 to 200nm.
In step (2), the polishing is chemical mechanical polishing.
As a specific embodiment of the present invention, in step (2), the medium polishing conditions include: the polishing pressure is 75-200 g/cm 2.
As a specific embodiment of the present invention, in step (2), the medium polishing conditions include: the rotation speed of the polishing disc is 30-80 revolutions per minute.
As a specific embodiment of the present invention, in step (2), the medium polishing conditions include: the rotating speed of the swinging roller wheel is 70-180 revolutions per minute.
As a specific embodiment of the present invention, in step (2), the medium polishing conditions include: the flow rate of the polishing solution is 1-15 mL/min.
As a specific embodiment of the present invention, in step (2), the medium polishing conditions include: the polishing pressure is 90-150 g/cm 2, the rotation speed of the polishing disc is 40-65 rpm, the rotation speed of the swinging roller is 100-170 rpm, and the flow rate of the polishing liquid is 3-12 mL/min.
In the middle polishing process, the polishing time is less than 12min, the total consumption of polishing solution is less than 180mL, and the roughness of the polished wafer is less than or equal to 10nm.
Preferably, the roughness of the wafer after the medium polishing is 5-7 nm.
As a specific embodiment of the present invention, the polishing method further comprises the step (3): carrying out fine polishing on the gallium antimonide wafer polished in the step (2) by adopting polishing cloth and fine polishing liquid;
The polishing solution comprises the following components in percentage by mass: 2 to 15 percent of silicon dioxide abrasive, 0.1 to 1.5 percent of chlorine-containing oxidant, 0.2 to 1.8 percent of silicate and the balance of water.
As a specific embodiment of the invention, the particle size of the silica abrasive is 20-150 nm.
In the step (3), the polishing is chemical mechanical polishing.
As a specific embodiment of the present invention, polishing conditions of the finish polishing include: the polishing pressure is 80-180 g/cm 2.
As a specific embodiment of the present invention, polishing conditions of the finish polishing include: the rotation speed of the polishing disc is 30-80 revolutions per minute.
As a specific embodiment of the present invention, polishing conditions of the finish polishing include: the rotating speed of the swinging roller is 80-170 rpm.
As a specific embodiment of the present invention, polishing conditions of the finish polishing include: the flow rate of the polishing solution is 4-20 mL/min.
As a specific embodiment of the present invention, polishing conditions of the finish polishing include: the polishing pressure is 110-140 g/cm 2, the rotation speed of the polishing disc is 40-75 rpm, the rotation speed of the swinging roller is 100-165 rpm, and the flow rate of the polishing liquid is 8-16 mL/min.
In the fine polishing process, the polishing time is less than 10min, the total consumption of polishing liquid is less than 200mL, and the roughness of the polished wafer is less than or equal to 0.7nm.
As a specific embodiment of the invention, the roughness of the wafer after finish polishing is 0.095-0.7 nm.
As a specific embodiment of the present invention, the chlorine-containing oxidizing agent includes sodium hypochlorite or lithium hypochlorite.
As a specific embodiment of the invention, the water used in the medium polishing liquid and the fine polishing liquid is deionized water.
As a specific embodiment of the present invention, the polishing cloth is a damping cloth.
As a specific embodiment of the invention, the length of the polishing cloth velvet is 200-550 nm, preferably 350-450 nm.
As a specific embodiment of the present invention, the pore diameter of the polishing cloth is 20 to 200. Mu.m, preferably 50 to 120. Mu.m.
In step (1), as a specific embodiment of the present invention, the gallium antimonide wafer thinning process includes: pasting a gallium antimonide wafer on a carrying disc, solidifying, and thinning the gallium antimonide wafer by using a thinning machine at 1200-2500 rpm by using a 1000-6000 mesh grinding wheel; the thinning removal amount is controlled to be 20-60 mu m, and the flatness TTV value of the gallium antimonide wafer is controlled to be less than or equal to 3 mu m.
As specific embodiments of the present invention, the curing conditions include: natural curing, hot air circulation curing, far infrared radiation curing, ultraviolet curing or electron beam curing.
In a second aspect, the present invention provides a gallium antimonide polished wafer prepared by the polishing method provided in the first aspect of the present invention.
As a specific embodiment of the invention, the roughness of the gallium antimonide polished wafer is 5-7 nm.
Preferably, the roughness of the gallium antimonide polished wafer is 0.095-0.7 nm.
Compared with the prior art, the invention has the following beneficial effects:
The gallium antimonide wafer polishing process in the prior art generally comprises rough polishing, medium polishing and fine polishing.
According to the technical scheme, the damage or high points on the surface of the gallium antimonide wafer are removed by replacing the traditional rough polishing process by the thinning process, the time for thinning is only one tenth or even two tenths of the time required by the rough polishing process, and compared with the traditional process for removing a large amount by rough polishing, the thinning process ensures that the damage or high points on the surface can be completely removed, greatly reduces the time spent by the original process at the stage, improves the damage or high point removing efficiency, and meanwhile, the surface flatness brought by the thinning process is higher and the surface effect is more stable.
In the prior art, because the gallium antimonide wafer is small in hardness, fragile in texture and easy to scratch, high-hardness grinding particles and chemical reagents with strong chemical corrosiveness are generally avoided in the polishing process, and thinner and softer grinding particles are matched with chemical reagents with weak chemical corrosiveness to avoid scratching and damage to the wafer, so in the gallium antimonide polishing process, the polishing time and the material are the most spent process in removing the damage or polishing after high points, the overall efficiency of the gallium antimonide polishing process is directly influenced by the polishing process in the polishing process, and the polishing process is greatly influenced by variables due to long polishing time, so that the effect is unstable.
According to the technical scheme, aluminum oxide with higher hardness is innovatively used as an abrasive, and a chlorine-containing oxidant with stronger chemical corrosiveness is used as a polishing solution of a polishing auxiliary agent, so that the surface roughness of the gallium antimonide wafer after being polished in a medium mode can reach 5-7 nm by being matched with polishing cloth, and the gallium antimonide wafer after being polished in the medium mode has no obvious deep scratches. In the examples, the minimum polishing time was 10 minutes, and the minimum consumption of the polishing liquid was 60mL. Compared with the traditional middle polishing process, the polishing efficiency is improved, the polishing time and the polishing liquid consumption are saved, and meanwhile, the surface effect is stable.
The polishing method also comprises finish polishing, and further smoothes polishing flaws and reduces roughness through treatment in the finish polishing stage.
In the technical scheme of the application, through the polishing process route, the total polishing time of the middle polishing and the finish polishing is 17min, the total consumption of the polishing solution is 165mL, and the roughness of the polished wafer can reach 0.095nm at the minimum.
In summary, in the gallium antimonide wafer polishing method, the combination of thinning and intermediate polishing and finish polishing processes is adopted, and a specific polishing abrasive is selected in the intermediate polishing and finish polishing processes, so that the polishing efficiency is greatly improved on the basis of ensuring the wafer quality. The gallium antimonide wafer has high surface quality after polishing, no scratch and fog defects and low surface roughness.
Drawings
FIG. 1 is a graph of the surface roughness of gallium antimonide wafer after fine polishing in example 6.
Detailed Description
The invention is further illustrated below in connection with specific examples, which are not to be construed as limiting the invention in any way.
The raw materials used in the examples were all from commercial sources, with alumina abrasives purchased from Xuan Chengjing rayls new materials limited; sodium hypochlorite, lithium hypochlorite, is purchased from national pharmaceutical group chemical agents, inc; the polishing liquid was purchased from Japanese fujimi.
Example 1
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
(3) Surface test: the surface quality of the polished gallium antimonide wafer is tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Example 2
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 10% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
(3) Surface test: the surface quality of the polished gallium antimonide wafer is tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Example 3
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 18% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
(3) Surface test: the surface quality of the polished gallium antimonide wafer is tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Example 4
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of alumina abrasive, 3% of lithium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 100nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
(3) Surface test: the surface quality of the polished gallium antimonide wafer is tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Example 5
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 250nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
(3) Surface test: the surface quality of the polished gallium antimonide wafer is tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Example 6
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
After the polishing step, the surface roughness of the gallium antimonide wafer is 5nm through atomic force microscope test.
(3) And (3) carrying out fine polishing on the gallium antimonide wafer polished in the step (2) by adopting polishing cloth and fine polishing liquid. The polishing solution comprises the following components in percentage by mass: 5% of silicon dioxide abrasive, 0.6% of sodium hypochlorite, 0.8% of silicate and the balance of deionized water, wherein the particle size of the silicon dioxide abrasive is 50nm.
The fine polishing is mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 15mL/min, and the polishing time is 7min.
(4) Surface test: the surface quality of the gallium antimonide wafer after the finish polishing was tested by an atomic force microscope, and the test results are shown in fig. 1 and table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Example 7
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 200-300 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
After the polishing step, the surface roughness of the gallium antimonide wafer is 6.6nm through atomic force microscope test.
(3) And (3) carrying out fine polishing on the gallium antimonide wafer polished in the step (2) by adopting polishing cloth and fine polishing liquid.
The polishing solution comprises the following components in percentage by mass: 5% of silicon dioxide abrasive, 0.6% of sodium hypochlorite, 0.8% of silicate and the balance of deionized water, wherein the particle size of the silicon dioxide abrasive is 50nm.
The fine polishing is mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 15mL/min, and the polishing time is 7min.
(4) Surface test: the surface quality of the gallium antimonide wafer after the finish polishing was tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Example 8
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 450-500 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
After the polishing step, the surface roughness of the gallium antimonide wafer is 6.4nm through atomic force microscope test.
(3) And (3) carrying out fine polishing on the gallium antimonide wafer polished in the step (2) by adopting polishing cloth and fine polishing liquid.
The polishing solution comprises the following components in percentage by mass: 5% of silicon dioxide abrasive, 0.6% of sodium hypochlorite, 0.8% of silicate and the balance of deionized water, wherein the particle size of the silicon dioxide abrasive is 50nm.
The fine polishing is mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 15mL/min, and the polishing time is 7min.
(4) Surface test: the surface quality of the gallium antimonide wafer after the finish polishing was tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Example 9
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 20 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
After the polishing step, the surface roughness of the gallium antimonide wafer is 5.4nm through atomic force microscope test.
(3) And (3) carrying out fine polishing on the gallium antimonide wafer polished in the step (2) by adopting polishing cloth and fine polishing liquid.
The polishing solution comprises the following components in percentage by mass: 5% of silicon dioxide abrasive, 0.6% of sodium hypochlorite, 0.8% of silicate and the balance of deionized water, wherein the particle size of the silicon dioxide abrasive is 50nm.
The fine polishing is mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 15mL/min, and the polishing time is 7min.
(4) Surface test: the surface quality of the gallium antimonide wafer after the finish polishing was tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Example 10
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 200 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
After the polishing step, the surface roughness of the gallium antimonide wafer is 5.89nm through atomic force microscope test.
(3) And (3) carrying out fine polishing on the gallium antimonide wafer polished in the step (2) by adopting polishing cloth and fine polishing liquid.
The polishing solution comprises the following components in percentage by mass: 5% of silicon dioxide abrasive, 0.6% of sodium hypochlorite, 0.8% of silicate and the balance of deionized water, wherein the particle size of the silicon dioxide abrasive is 50nm.
The fine polishing is mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 15mL/min, and the polishing time is 7min.
(4) Surface test: the surface quality of the gallium antimonide wafer after the finish polishing was tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Comparative example 1
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of silicon dioxide abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the silica abrasive is 180nm.
The middle polishing is mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
(3) Surface test: the surface quality of the polished gallium antimonide wafer is tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Comparative example 2
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-400 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 25% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
(3) Surface test: the surface quality of the polished gallium antimonide wafer is tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Comparative example 3
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-400 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 3% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 180nm.
The middle polishing is mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
(3) Surface test: the surface quality of the polished gallium antimonide wafer is tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Comparative example 4
In the embodiment, the polishing cloth used in the middle polishing and the finish polishing processes is made of black damping cloth, the velvet length of the polishing cloth is 350-450 mu m, and the aperture of the polishing cloth is 80 mu m.
(1) Thinning the gallium antimonide wafer: uniformly adhering gallium antimonide wafers on a ceramic carrying disc by adopting solid wax, naturally solidifying, wiping off redundant solid wax by using alcohol, grinding the gallium antimonide wafers by using a 6000-mesh grinding wheel through a thinning machine at 2000 revolutions per minute, controlling the removal amount to be 20 mu m, and detecting the flatness TTV value of the gallium antimonide wafers to be 2 mu m.
(2) And (3) carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting a polishing cloth matched middle polishing liquid.
The medium polishing liquid comprises the following components in percentage by mass: 15% of alumina abrasive, 3% of sodium hypochlorite and the balance of deionized water; wherein the particle size of the alumina abrasive is 360nm.
The middle polishing is chemical mechanical polishing, and the technological parameters are as follows: the polishing pressure is 125g/cm 2, the rotation speed of the polishing disk is 55 rpm, the rotation speed of the swinging roller is 165 rpm, the flow rate of the polishing liquid is 6mL/min, and the polishing time is 10min.
(3) Surface test: the surface quality of the polished gallium antimonide wafer is tested by an atomic force microscope, and the test results are shown in table 1. Wherein the scanning range of the atomic force microscope is 5 μm×5 μm.
Table 1 results of surface testing of gallium antimonide wafers after polishing of examples and comparative examples
In summary, the present application discloses a polishing method for gallium antimonide wafers, which uses a method combining grinding reduction and chemical mechanical polishing to polish gallium antimonide wafers. Wherein, the chemical mechanical polishing adopts two polishing modes of middle polishing and fine polishing. The polishing solution which adopts aluminum oxide with higher hardness as an abrasive and chlorine-containing oxidizing agent with stronger chemical corrosiveness as a polishing auxiliary agent is creatively used in the polishing, and the surface roughness of the gallium antimonide wafer after the polishing can reach 5-7 nm by being matched with polishing cloth. The polishing effect is further improved by the treatment in the finish polishing stage.
It should be noted that the above-described embodiments are only for explaining the present invention and do not constitute any limitation of the present invention. The invention has been described with reference to exemplary embodiments, but it is understood that the words which have been used are words of description and illustration, rather than words of limitation. Modifications may be made to the invention as defined in the appended claims, and the invention may be modified without departing from the scope and spirit of the invention. Although the invention is described herein with reference to particular means, materials and embodiments, the invention is not intended to be limited to the particulars disclosed herein, as the invention extends to all other means and applications which perform the same function.
Claims (7)
1. A method of polishing a gallium antimonide wafer, comprising the steps of:
(1) Thinning the gallium antimonide wafer;
(2) Carrying out middle polishing on the thinned gallium antimonide wafer in the step (1) by adopting polishing cloth matched with middle polishing liquid;
wherein, the polishing liquid comprises the following components in percentage by mass: 5-20% of alumina abrasive, 1-5% of chlorine-containing oxidant and the balance of water; the particle size of the alumina abrasive is 150-200 nm;
In the step (2), the middle polishing is chemical mechanical polishing; the polishing conditions include: the polishing pressure is 75-200 g/cm 2; the rotation speed of the polishing disc is 30-80 revolutions per minute; the rotating speed of the swinging head roller is 70-180 revolutions per minute; the flow rate of the polishing solution is 1-15 mL/min;
The polishing method further comprises the step (3): carrying out fine polishing on the gallium antimonide single crystal wafer subjected to the middle polishing in the step (2) by adopting polishing cloth and fine polishing liquid;
The fine polishing solution comprises the following components in percentage by mass: 2 to 15 percent of silicon dioxide abrasive, 0.1 to 1.5 percent of chlorine-containing oxidant, 0.2 to 1.8 percent of silicate and the balance of water;
The particle size of the silicon dioxide abrasive is 20-150 nm.
2. The method for polishing a gallium antimonide wafer according to claim 1, wherein the finish polishing in step (3) is chemical mechanical polishing, and the polishing conditions of the finish polishing include: the polishing pressure is 80-180 g/cm 2, the rotation speed of the polishing disc is 30-80 rpm, the rotation speed of the swinging roller is 80-170 rpm, and the flow rate of the polishing liquid is 4-20 mL/min.
3. The method of claim 1, wherein the chlorine-containing oxidizing agent comprises sodium hypochlorite or lithium hypochlorite, and/or the water is deionized water.
4. The method for polishing a gallium antimonide wafer according to claim 1, wherein the polishing cloth is a damping cloth; the length of the polishing cloth velvet is 200-550 nm, and the aperture of the polishing cloth is 20-200 mu m.
5. The method for polishing a gallium antimonide wafer according to claim 1, wherein in the step (1), the gallium antimonide wafer thinning process comprises: pasting and solidifying the gallium antimonide wafer on a carrying disc, thinning the gallium antimonide wafer by using a thinning machine, and controlling the conditions of the thinning process to include: the grinding wheel is 1000-6000 meshes, and the rotating speed is 1200-2500 rpm; the thinning and removing amount is controlled to be 20-60 mu m; the flatness TTV value of the gallium antimonide wafer is controlled to be less than or equal to 3 mu m.
6. The method of polishing a gallium antimonide wafer according to claim 5, wherein the curing conditions include: natural curing, hot air circulation curing, far infrared radiation curing, ultraviolet curing or electron beam curing.
7. A gallium antimonide polished wafer prepared by the polishing method according to any one of claims 1 to 6.
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