TWI690588B - Colloidal silica polishing composition and method for manufacturing synthetic quartz glass substrates using the same - Google Patents
Colloidal silica polishing composition and method for manufacturing synthetic quartz glass substrates using the same Download PDFInfo
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- TWI690588B TWI690588B TW103112143A TW103112143A TWI690588B TW I690588 B TWI690588 B TW I690588B TW 103112143 A TW103112143 A TW 103112143A TW 103112143 A TW103112143 A TW 103112143A TW I690588 B TWI690588 B TW I690588B
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- Organic Chemistry (AREA)
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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Abstract
Description
本發明係關於膠體二氧化矽研磨材,更詳言之,係關於使用於研磨光罩、奈米壓印、液晶彩色濾光片用等之最尖端技術所用之合成石英玻璃基板之膠體二氧化矽研磨材及使用其之合成石英玻璃基板的製造方法。 The present invention relates to colloidal silicon dioxide abrasives, and more specifically, to colloidal dioxide of synthetic quartz glass substrates used in cutting-edge technologies such as polishing masks, nanoimprints, and liquid crystal color filters. Manufacturing method of silicon abrasive and synthetic quartz glass substrate using the same.
研磨光罩、液晶基板等所使用之合成石英玻璃基板時,作為研磨材,經常使用氧化鈰、膠體二氧化矽之研磨材。 When polishing synthetic quartz glass substrates used in photomasks, liquid crystal substrates, etc., abrasive materials such as cerium oxide and colloidal silica are often used as abrasive materials.
研磨光罩、液晶所使用之合成石英玻璃基板由於要求高平坦度、高平滑性及低缺陷性,故對其表面調整係經過摩擦(lapping)步驟、拋光(polishing)步驟等之數階段步驟而製造製品。 Synthetic quartz glass substrates used for polishing photomasks and liquid crystals require high flatness, high smoothness and low defects, so the surface adjustment is performed through several steps such as a lapping step and a polishing step. Manufacturing products.
摩擦步驟係去除自錠塊切片時之加工變形,拋光步驟係使基板鏡面化並提高表面平坦度、進行形狀之 作成,於最終之最終拋光步驟中,則使用粒徑小的膠體二氧化矽研磨材使基板表面平滑,去除微小缺陷而製造基板。 The friction step is to remove the processing deformation when slicing from the ingot, and the polishing step is to mirror the substrate and improve the surface flatness and shape In the final polishing step, a colloidal silica abrasive with a small particle size is used to smooth the surface of the substrate, remove minor defects, and manufacture the substrate.
使基板鏡面化之步驟中,已知氧化鈰研磨材之使用較為一般且有效。 In the step of mirroring the substrate, it is known that the use of cerium oxide abrasives is more general and effective.
然而,近來遭逢稀土價格之高漲,為了減少氧化鈰研磨材之使用量,以替代研磨材或回收技術之開發為目標,已進行多種研究。 However, the price of rare earths has been rising recently. In order to reduce the use of cerium oxide abrasives, various researches have been conducted with the goal of replacing abrasive materials or developing recycling technologies.
例如,日本特開2009-007543號公報(專利文獻1)中,已提案使用於氧化鈰中混合氧化鋯之複合氧化物粒子作為研磨材而研磨玻璃基板之方法。 For example, Japanese Patent Laid-Open No. 2009-007543 (Patent Document 1) has proposed a method of polishing a glass substrate using composite oxide particles in which zirconia is mixed with cerium oxide as an abrasive.
且,日本特開2008-270584號公報(專利文獻2)中,顯示藉由使用非球狀之特殊形膠體二氧化矽粒子,而以比通常之使用膠體二氧化矽時更優異研磨速率研磨半導體晶圓之方法。 Furthermore, Japanese Patent Laid-Open No. 2008-270584 (Patent Document 2) shows that by using non-spherical special-shaped colloidal silica particles, the semiconductor is polished at a superior polishing rate than when the colloidal silica is generally used. Wafer method.
[專利文獻1]日本特開2009-007543號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2009-007543
[專利文獻2]日本特開2008-270584號公報 [Patent Document 2] Japanese Unexamined Patent Publication No. 2008-270584
然而,專利文獻1中由於並非完全不使用氧化鈰之方法,故專利文獻1之研磨材難以說是完全的氧化 鈰替代研磨材。且,藉由混合氧化鋯,會導致氧化鈰研磨粒與氧化鋯研磨粒表面之Zeta電位變化,而有研磨材分散性、進而研磨後於基材表面上之殘渣變多之顧慮。 However, since Patent Document 1 is not a method that does not use cerium oxide at all, it is difficult to say that the polishing material of Patent Document 1 is completely oxidized Cerium replaces abrasive materials. In addition, by mixing zirconia, the zeta potential of the surfaces of the cerium oxide abrasive grains and the zirconia abrasive grains will change, and there is a concern that the dispersibility of the abrasive and the residue on the substrate surface after polishing will increase.
且,專利文獻2中,由於源自玻璃基板之 SiO2會與膠體二氧化矽粒子結合,故膠體二氧化矽的形狀趨近球形,導致研磨速率降低。再者,由於膠體二氧化矽之形狀為特殊形,故即使抑制了基板表面之擦傷,亦容易產生可能成為光罩基板之致命缺陷之微小缺陷。 Furthermore, in Patent Document 2, since SiO 2 derived from the glass substrate is bound to the colloidal silica particles, the shape of the colloidal silica tends to be spherical, resulting in a decrease in the polishing rate. In addition, since the colloidal silicon dioxide has a special shape, even if the surface scratches of the substrate are suppressed, minute defects that may become fatal defects of the reticle substrate are easily generated.
鑑於上述情況,本發明之目的係提供一種於 合成石英玻璃基板之研磨步驟中顯示優異研磨速率,且可抑制基板表面之擦傷、微小缺陷之膠體二氧化矽研磨材及使用其之合成石英玻璃基板之製造方法。 In view of the above circumstances, the object of the present invention is to provide a The colloidal silica polishing material that exhibits excellent polishing rate in the polishing step of the synthetic quartz glass substrate, and can suppress scratches and minute defects on the surface of the substrate, and a method for manufacturing the synthetic quartz glass substrate using the same.
本發明人等,為了解決上述問題,著眼於研磨合成石英玻璃基板時所用之膠體二氧化矽研磨粒積極進行檢討。其結果,發現藉由混合真球型與會合型之具有相互不同平均一次粒徑及會合度之膠體二氧化矽研磨粒,特別是使用會合型膠體二氧化矽研磨粒之平均一次粒徑大於真球型膠體二氧化矽研磨粒之平均一次粒徑者進行研磨,於研磨時藉由離心力自基板去除之真球型膠體二氧化矽研磨粒比會合型膠體二氧化矽研磨粒更少,而可抑制基板表面之微小缺陷,獲得高的平滑性。且,藉由使用本發明之研磨材,對於所有大的或所有種類之基板,均可提高研磨 速率,因而完成本發明。 In order to solve the above-mentioned problems, the present inventors focused on colloidal silica abrasive grains used for polishing synthetic quartz glass substrates and actively conducted reviews. As a result, it was found that by mixing spherical and converging colloidal silica abrasive particles with mutually different average primary particle diameters and degrees of convergence, the average primary particle size of condensed colloidal silica abrasive particles is greater than true The average primary particle size of the spherical colloidal silica abrasive grains is polished. During grinding, the spherical spherical colloidal silica abrasive grains removed from the substrate by centrifugal force are less than the condensed colloidal silica abrasive grains. Suppress minor defects on the substrate surface and obtain high smoothness. And, by using the polishing material of the present invention, the polishing can be improved for all large or all kinds of substrates Speed, thus completing the present invention.
此處,本發明中,所謂真球型膠體二氧化矽係指二氧化矽粒子之形狀為平均真球度1.0~1.1之真球狀,較好為平均一次粒徑(D1A)為20~120nm,會合度(n1)為1.5以下之分散為膠體狀之膠體二氧化矽。此處,所謂平均真球度係指隨機取出100個二氧化矽粒子時之各粒子中之最大徑/最小徑之比的平均值。且,所謂會合型膠體二氧化矽係指真球型膠體二氧化矽粒子聚集之聚集體,較好為平均一次粒徑(D1B)為70~200nm,會合度(n2)為2.0以上之分散為膠體狀之膠體二氧化矽。 Here, in the present invention, the true spherical colloidal silica means that the shape of the silica particles is true spherical with an average true sphericity of 1.0 to 1.1, preferably an average primary particle diameter (D1A) of 20 to 120 nm , Colloidal silica dispersed in colloidal form with a meeting degree (n1) of 1.5 or less. Here, the average sphericity refers to the average value of the ratio of the largest diameter to the smallest diameter of each particle when 100 silicon dioxide particles are randomly taken. In addition, the so-called condensed colloidal silica refers to agglomerates of true spherical colloidal silica particles, preferably having an average primary particle diameter (D1B) of 70 to 200 nm and a convergence degree (n2) of 2.0 or more. Colloidal silicon dioxide.
據此,本發明提供下述之膠體二氧化矽研磨材及合成石英玻璃基板之製造方法。 Accordingly, the present invention provides the following methods for manufacturing colloidal silica abrasives and synthetic quartz glass substrates.
[1]一種膠體二氧化矽研磨材,其特徵係含有含真球型膠體二氧化矽研磨粒與會合型膠體二氧化矽研磨粒之膠體溶液。 [1] A colloidal silica abrasive material, which is characterized by containing a colloidal solution containing true spherical colloidal silica abrasive particles and convergent colloidal silica abrasive particles.
[2]如[1]所記載之膠體二氧化矽研磨材,其中前述會合型膠體二氧化矽研磨粒之平均一次粒徑(D1B)大於真球型膠體二氧化矽研磨粒之平均一次粒徑(D1A)。 [2] The colloidal silica abrasive as described in [1], wherein the average primary particle size (D1B) of the aforementioned colloidal colloidal silica abrasive particles is greater than the average primary particle size of the true spherical colloidal silica abrasive particles (D1A).
[3]如[1]或[2]所記載之膠體二氧化矽研磨材,其中前述真球型膠體二氧化矽研磨粒之平均一次粒徑(D1A)為20~120nm。 [3] The colloidal silica abrasive as described in [1] or [2], wherein the average primary particle size (D1A) of the spherical spherical colloidal silica abrasive particles is 20 to 120 nm.
[4]如[1]~[3]中任一項所記載之膠體二氧化矽研磨材,其中前述會合型膠體二氧化矽研磨粒之平均一次粒徑(D1B)為70~200nm。 [4] The colloidal silica abrasive as described in any one of [1] to [3], wherein the average primary particle size (D1B) of the convergent colloidal silica abrasive particles is 70 to 200 nm.
[5]如[1]~[4]中任一項所記載之膠體二氧化矽研磨材,其中前述真球型膠體二氧化矽研磨粒之會合度(n1)為1.0~1.5。 [5] The colloidal silica abrasive material as described in any one of [1] to [4], wherein the meeting degree (n1) of the aforementioned spherical spherical colloidal silica abrasive particles is 1.0 to 1.5.
[6]如[1]~[5]中任一項所記載之膠體二氧化矽研磨材,其中前述會合型膠體二氧化矽研磨粒之會合度(n2)為2.0~3.5。 [6] The colloidal silica abrasive material as described in any one of [1] to [5], wherein the convergence degree (n2) of the convergent colloidal silica abrasive particles is 2.0 to 3.5.
[7]如[1]~[6]中任一項所記載之膠體二氧化矽研磨材,其中前述膠體二氧化矽研磨材中之真球型膠體二氧化矽研磨粒之含量相對於會合型膠體二氧化矽研磨粒為2~5倍量(質量比)之比例。 [7] The colloidal silica abrasive material as described in any one of [1] to [6], wherein the content of the spherical spherical colloidal silica abrasive particles in the colloidal silica abrasive material is relative to the convergent type The ratio of colloidal silica abrasive particles is 2 to 5 times the amount (mass ratio).
[8]一種合成石英玻璃基板之製造方法,其在合成石英玻璃基板之製造步驟中,將如[1]~[7]中任一項所記載之膠體二氧化矽研磨材使用於半最終研磨步驟或最終研磨步驟中。 [8] A method for manufacturing a synthetic quartz glass substrate, which uses the colloidal silica polishing material described in any one of [1] to [7] for semi-final polishing in the manufacturing step of a synthetic quartz glass substrate Step or final grinding step.
依據本發明,可獲得比使用以往膠體二氧化矽之研磨更快的研磨速率且可抑制基板表面之微小缺陷,可獲得高的平滑性。且,亦可利用作為自粗糙面研磨時之氧化鈰替代研磨材,能解決最近之稀土問題。 According to the present invention, it is possible to obtain a polishing rate faster than that using conventional colloidal silica, and to suppress minute defects on the substrate surface, and to obtain high smoothness. In addition, it can also be used as a substitute for cerium oxide when polishing from a rough surface, which can solve the recent rare earth problem.
以下,針對本發明詳細加以說明。 Hereinafter, the present invention will be described in detail.
本發明之基板研磨用之膠體二氧化矽研磨之研磨粒係使用使水玻璃或烷氧基矽烷等之有機矽酸鹽化合物等水解所生成者,尤其是使用平均一次粒徑及會合度不同之真球型與會合型之不同形狀之膠體二氧化矽研磨粒。 The abrasive particles of the colloidal silica used for polishing the substrate of the present invention are produced by hydrolyzing organic silicate compounds such as water glass or alkoxysilane, especially those with different average primary particle sizes and degrees of convergence Colloidal silica abrasive grains with different shapes of spherical and convergent.
此處,使用不同形狀之膠體二氧化矽粒子之理由如下。 Here, the reasons for using colloidal silica particles of different shapes are as follows.
一般在研磨合成石英玻璃等之基板時,膠體二氧化矽研磨粒係使用於最終研磨步驟。其理由係與氧化鈰等之研磨用粒子相比,藉由使用小的粒徑且粒子表面平滑之膠體二氧化矽,可製作具有低缺陷且高平滑表面之基板。然而,由於為小粒徑,故研磨速率慢,作為研磨步驟只不過能微小量研磨基板表面,難以說是具有研削力之研磨粒。 Generally, when grinding substrates such as synthetic quartz glass, colloidal silica abrasive particles are used in the final grinding step. The reason for this is that by using colloidal silica having a small particle size and a smooth particle surface as compared with polishing particles such as cerium oxide, a substrate with low defects and a highly smooth surface can be produced. However, because of the small particle size, the polishing rate is slow. As a polishing step, the substrate surface can only be polished by a small amount, and it is difficult to say that it is a polishing particle with grinding power.
然而,使用混合不同粒徑之膠體二氧化矽研磨粒之研磨材時,每單位體積之膠體二氧化矽研磨粒之空間佔有率變大,結果,提高研磨粒衝撞玻璃基板之機率,可提高研削力。 However, when using abrasive materials in which colloidal silica abrasive grains of different particle sizes are mixed, the space occupancy rate of the colloidal silica abrasive grains per unit volume becomes larger, and as a result, the probability of the abrasive grains colliding with the glass substrate is increased, which can improve grinding force.
亦即,由具有相同平均一次粒徑之會合型膠體二氧化矽研磨粒所構建之每單位體積之最密填充構造中之空間內,進入平均一次粒徑比前述膠體二氧化矽研磨粒小的真球型膠體二氧化矽研磨粒,藉此可提高每單位體積之填充率,可獲得具有研削力之研磨粒。 That is, the space in the most densely packed structure per unit volume constructed from convergent colloidal silica abrasive grains having the same average primary particle diameter enters the average primary particle diameter smaller than the aforementioned colloidal silica abrasive grains Spherical colloidal silica abrasive particles can increase the filling rate per unit volume and obtain abrasive particles with grinding power.
再者,藉由混合真球型與會合型之不同形狀之膠體二氧化矽粒子,引出個別所具有之立體特徵,除了研磨速率之進一步提高以外,亦同時達成基板表面之缺陷 數減少及平滑性提高。 In addition, by mixing colloidal silica particles of different shapes of spherical and confluent types, the three-dimensional characteristics of the individual are drawn. In addition to the further improvement of the polishing rate, the defects on the surface of the substrate are also achieved. The number is reduced and the smoothness is improved.
以下詳細描述其機制。 The mechanism is described in detail below.
會合型膠體二氧化矽粒子由於相比於粒子形狀為真球型膠體二氧化矽研磨粒變形,故研磨粒對基板之接觸面積小,接近於點接觸。所以,可增大透過研磨粒自研磨壓盤傳遞至基板之力,而可提高研削力。 Convergent colloidal silica particles are deformed compared to the spherical spherical colloidal silica abrasive particles, so the contact area of the abrasive particles with the substrate is small and close to point contact. Therefore, the force transmitted from the polishing platen to the substrate through the polishing particles can be increased, and the grinding force can be increased.
僅由會合型膠體二氧化矽粒子所構成之單位 立方體積中之填充構造中雖有不存在粒子之空隙部,但藉由混合真球型膠體二氧化矽研磨粒埋填該空隙,見到研削力之進一步提高,結果可達成研磨速率之提高。 A unit consisting only of converging colloidal silica particles Although the filling structure in the cubic volume has voids where no particles exist, by mixing the spherical spherical colloidal silica abrasive grains to fill the voids, the grinding force is further improved, and as a result, the polishing rate can be improved.
且,上述兩種膠體二氧化矽研磨粒之平均一 次粒徑(D1)較好係會合型膠體二氧化矽研磨粒之平均一次粒徑(D1B)大於真球型膠體二氧化矽研磨粒之平均一次粒徑(D1A)。 Moreover, the average of the two colloidal silica abrasive particles The secondary particle size (D1) is preferably the average primary particle size (D1B) of the colloidal colloidal silica abrasive particles is larger than the average primary particle size (D1A) of the true spherical colloidal silica abrasive particles.
藉由會合型膠體二氧化矽研磨粒雖可提高研削力,但由於研磨粒子之表面形狀變形,故有使基板表面之面粗糙度變粗之可能性。另一方面,對於該基板表面,若以真球型膠體二氧化矽研磨粒進行研磨,則可獲得低缺陷且高平滑之基板表面。此時,若考慮於旋轉系中存在參與研磨之膠體二氧化矽粒子,則會合型膠體二氧化矽研磨粒之平均一次粒徑大於真球型膠體二氧化矽研磨粒之平均一次粒徑時,由於因離心力而優先自基板表面去除會合型膠體二氧化矽研磨粒,故可達成自上述會合型膠體二氧化矽研磨粒後接著為真球型膠體二氧化矽研磨粒之順序進行研磨之模 式,故而更佳。 Although the colloidal silica abrasive particles can improve the grinding force, the surface shape of the abrasive particles is deformed, so that the surface roughness of the substrate surface may become coarse. On the other hand, if the surface of the substrate is polished with true spherical colloidal silica abrasive grains, a substrate surface with low defects and high smoothness can be obtained. At this time, if the colloidal silica particles involved in the grinding are considered to exist in the rotating system, the average primary particle size of the colloidal silica abrasive particles will be greater than the average primary particle size of the true spherical colloidal silica abrasive particles, Due to the preferential removal of the condensed colloidal silica abrasive particles from the substrate surface due to centrifugal force, it is possible to achieve the grinding mode from the above-mentioned condensed colloidal silica abrasive particles followed by true spherical colloidal silica abrasive particles Style, so better.
此處,真球型膠體二氧化矽研磨粒之平均一 次粒徑(D1A)較好為20~120nm,更好為40~100nm,最好為50~100nm。真球型膠體二氧化矽研磨粒之平均一次粒徑小於20nm時,會有研磨後之洗淨步驟中之研磨粒難去除,而作為殘渣殘留微小凸缺陷之情況。另一方面真球型膠體二氧化矽研磨粒之平均一次粒徑大於120nm時,難以收容至由會合型膠體二氧化矽研磨粒所形成之空隙中,故會產生無法充分提高作為研磨粒之研削力之缺陷之情況。 Here, the average of the spherical spherical silica abrasive particles The secondary particle diameter (D1A) is preferably 20 to 120 nm, more preferably 40 to 100 nm, and most preferably 50 to 100 nm. When the average primary particle size of the spherical spherical colloidal silica abrasive particles is less than 20 nm, the abrasive particles in the cleaning step after grinding may be difficult to remove, and minute convex defects may remain as residues. On the other hand, when the average primary particle size of the spherical spherical colloidal silica abrasive particles is greater than 120 nm, it is difficult to be accommodated in the void formed by the condensed colloidal silica abrasive particles, so the grinding as an abrasive particle cannot be sufficiently improved The situation of the defect of power.
且,真球型膠體二氧化矽研磨粒之會合度 (n1)較好為1.5以下,更好為1.0~1.5。真球型膠體二氧化矽研磨粒之會合度大於1.5時,無法充分進入會合型膠體二氧化矽研磨粒所形成之填充構造中所形成之空隙內,無法充分提高每單位立方體積之填充率,故有無法提高研削力,難以獲得與研磨速率之提高相符之效果之情況。又,會合度係以會合度(n)=平均二次粒徑/平均一次粒徑而求得,平均一次粒徑係由BET法所得之比表面積測定值換算,平均二次粒徑係由紅色雷射所得之動態光散射之散射強度測定而算出。 And, the meeting degree of the spherical colloidal silica abrasive particles (n1) is preferably 1.5 or less, and more preferably 1.0 to 1.5. When the meeting degree of the spherical colloidal silica abrasive particles is greater than 1.5, it cannot fully enter the voids formed in the filling structure formed by the colloidal colloidal silica abrasive particles, and the filling rate per cubic volume cannot be sufficiently increased. Therefore, it may not be possible to increase the grinding force, and it is difficult to obtain an effect that is consistent with the increase in the grinding rate. In addition, the degree of convergence is determined by the degree of convergence (n)=average secondary particle diameter/average primary particle diameter, the average primary particle diameter is converted from the measured value of the specific surface area obtained by the BET method, and the average secondary particle diameter is derived from red The scattering intensity of the dynamic light scattering obtained by the laser is measured and calculated.
另一方面,會合型膠體二氧化矽研磨粒之平 均一次粒徑(D1B)較好為70~200nm,更好為70~170nm,最好為80~150nm。會合型膠體二氧化矽研磨粒之平均一次粒徑小於70nm時,會有粒子趨近球形,無法獲得充 分之研削力且難以提高研磨速率之情況。另一方面,會合型膠體二氧化矽研磨粒之平均一次粒徑大於200nm時,膠體二氧化矽粒子本身之比重會變大,而有產生分散性差之缺陷之情況。 On the other hand, the level of converging colloidal silica abrasive grains The average primary particle size (D1B) is preferably 70 to 200 nm, more preferably 70 to 170 nm, and most preferably 80 to 150 nm. When the average primary particle size of the condensed colloidal silica abrasive particles is less than 70 nm, the particles tend to be spherical and cannot be charged. It is difficult to increase the grinding rate due to the grinding force. On the other hand, when the average primary particle size of the condensed colloidal silica abrasive particles is greater than 200 nm, the specific gravity of the colloidal silica particles themselves will increase, and there may be defects in poor dispersibility.
且,會合型膠體二氧化矽研磨粒之會合度(n2)較好為2.0以上,更好為2.0~3.5。會合型膠體二氧化矽研磨粒之會合度小於2.0時,會有引起無法充分引出研削力所必要之粒子變形之缺陷的情況。 In addition, the convergence degree (n2) of the colloidal colloidal silica abrasive particles is preferably 2.0 or more, and more preferably 2.0 to 3.5. When the convergence degree of the colloidal silica dioxide abrasive particles is less than 2.0, there may be a defect that the particles cannot be sufficiently deformed to induce the grinding force.
膠體二氧化矽研磨材中之真球型膠體二氧化矽研磨粒宜以會合型膠體二氧化矽研磨粒之較佳2~5倍量(質量比),更好2~4倍量之比例混合。真球型膠體二氧化矽研磨粒之含有比例未達會合型膠體二氧化矽研磨粒之2倍量時,會產生基板表面粗糙度惡化之缺陷的情況。另一方面,真球型膠體二氧化矽研磨粒多於5倍量時,由於研磨中真球型膠體二氧化矽研磨粒之影響成為支配角色,故研削力小,而有難以有效提高研磨速率之情況。 The spherical spherical colloidal silica abrasive particles in the colloidal silica grinding material should be mixed in a ratio of preferably 2 to 5 times (mass ratio), more preferably 2 to 4 times the amount of convergent colloidal silica abrasive particles. . When the content ratio of the spherical spherical colloidal silica abrasive grains is less than twice the amount of the colloidal colloidal silica abrasive grains, a defect that the surface roughness of the substrate deteriorates may occur. On the other hand, when the amount of true spherical colloidal silica abrasive particles is more than 5 times, the influence of the true spherical colloidal silica abrasive particles becomes the dominant role during grinding, so the grinding force is small, and it is difficult to effectively increase the grinding rate Situation.
且,真球型膠體二氧化矽研磨粒與會合型膠體二氧化矽研磨粒之比例,較好係真球型膠體二氧化矽研磨粒含有50~80質量份,更好為50~75質量份,再更好為60~75質量份。另一方面,會合型膠體二氧化矽研磨粒較好含有20~50質量份,更好為25~50質量份,再更好為25~40質量份。真球型膠體二氧化矽研磨粒與會合型膠體二氧化矽研磨粒之合計量為100質量份,該等研磨粒混合物在研磨材中較好為25~50質量%,尤佳為35~50質量 %。 In addition, the ratio of true spherical colloidal silica abrasive particles to convergent colloidal silica abrasive particles is preferably 50 to 80 parts by mass, more preferably 50 to 75 parts by mass of true spherical colloidal silica abrasive particles. , Even better for 60~75 parts by mass. On the other hand, the condensed colloidal silica abrasive particles preferably contain 20-50 parts by mass, more preferably 25-50 parts by mass, and even more preferably 25-40 parts by mass. The total amount of the spherical colloidal silica abrasive grains and the convergent colloidal silica abrasive grains is 100 parts by mass. The mixture of these abrasive grains in the abrasive is preferably 25-50% by mass, particularly preferably 35-50. quality %.
本發明所使用之膠體二氧化矽研磨粒可藉多 種製法製作,舉例為例如自水玻璃之造粒、使烷氧基矽烷等之有機矽酸鹽化合物等水解而得之方法等。含有該等膠體二氧化矽研磨粒之分散液之液性,基於膠體二氧化矽之保存安定性之觀點,較好為弱鹼性,但亦可以中性或酸性側之液性使用。膠體二氧化矽通常係以分散於水中使用,但亦可使用乙醇、異丙醇等之醇類、丙酮或甲基乙基酮等之酮類、苯、甲苯、二甲苯等之芳香族化合物、或該等有機溶劑或水之混合溶劑等作為分散介質。 The colloidal silica abrasive particles used in the present invention can be borrowed more Examples of such production methods include methods such as granulation from water glass and hydrolysis of organic silicate compounds such as alkoxysilanes. The liquidity of the dispersion liquid containing these colloidal silica abrasive particles is preferably weakly alkaline from the viewpoint of the preservation stability of the colloidal silica, but it can also be used on the liquid side of the neutral or acid side. Colloidal silica is usually used dispersed in water, but alcohols such as ethanol and isopropanol, ketones such as acetone or methyl ethyl ketone, aromatic compounds such as benzene, toluene and xylene can also be used. Or these organic solvents or mixed solvents of water, etc. are used as the dispersion medium.
本發明之膠體二氧化矽研磨材可將上述真球 型膠體二氧化矽研磨粒與會合型膠體二氧化矽研磨粒分散於分散介質中,作成膠體溶液(膠體二氧化矽分散液)而得。且本發明之膠體二氧化矽研磨材亦可藉由組合市售之膠體二氧化矽分散液而製作。例如,作為真球型膠體二氧化矽之分散液,舉例有日產化學工業(股)製之SNOWTEX系列,FUJIMI INCORPORATED(股)製之COMPOL-50、COMPOL-80、COMPOL-120、COMPOL-EX III,杜邦製之SYTON、Mazin等,作為會合型膠體二氧化矽之分散液,舉例有日產化學工業(股)製之ST-UP、ST-OUP,多摩化學工業(股)製之TCSOL系列、扶桑化學工業(股)製之PL系列等。 The colloidal silica abrasive material of the present invention can be used to The colloidal silica abrasive particles and the condensed colloidal silica abrasive particles are dispersed in a dispersion medium and prepared as a colloidal solution (colloidal silica dispersion). Moreover, the colloidal silica abrasive of the present invention can also be produced by combining commercially available colloidal silica dispersions. For example, as a dispersion of true spherical colloidal silica, there are SNOWTEX series manufactured by Nissan Chemical Industry Co., Ltd., COMPOL-50, COMPOL-80, COMPOL-120, and COMPOL-EX III manufactured by FUJIMI INCORPORATED. , DuPont-made SYTON, Mazin, etc., as the dispersion of colloidal colloidal silica, examples include Nissan Chemical Industry Co., Ltd. ST-UP, ST-OUP, Tama Chemical Industry Co., Ltd. TCSOL series, Fuso PL series of chemical industry (stock) system etc.
使用本發明之研磨材研磨合成石英玻璃基板 等之基板時,可根據需要選擇適當研磨促進劑並適量放 入。藉由於研磨材中添加研磨促進劑,由於可使處於膠體二氧化矽研磨粒周圍之電雙層安定化,故期待可提高分散性,可持續快速之研磨速率。作為研磨促進劑,舉例為例如聚丙烯酸、聚丙烯酸鹽、聚(甲基)丙烯酸、聚(甲基)丙烯酸鹽、甲醛縮合物、縮合磷酸鹽等。調配研磨促進劑時,其調配量對於膠體二氧化矽(膠體溶液之固體成分)較好為10~20質量%。 Using the polishing material of the present invention to polish a synthetic quartz glass substrate When the substrate is waiting, you can select the appropriate grinding accelerator and put it in an appropriate amount according to your needs. Into. By adding a grinding accelerator to the grinding material, the electric double layer around the colloidal silica abrasive particles can be stabilized, so it is expected that the dispersibility can be improved and the grinding rate can be sustained and fast. Examples of the grinding accelerator include polyacrylic acid, polyacrylate, poly(meth)acrylic acid, poly(meth)acrylate, formaldehyde condensate, and condensed phosphate. When blending a grinding accelerator, the blending amount is preferably 10 to 20% by mass for colloidal silica (solid content of the colloidal solution).
作為使用本發明之研磨材之研磨對象的基板 ,舉例有合成石英玻璃基板、鉭酸鋰基板、矽基板、HDD用玻璃基板、鈉鈣玻璃(soda-lime glass)基板等,但本發明之研磨材尤其可使用於製造作為研磨光罩、奈米壓印、液晶濾光片用等所用之合成石英玻璃基板時之研磨步驟中。基板尺寸例如於四方型形狀之基板時,可較好地使用5吋見方(127.0×127.0mm)、6吋見方(152.4×152.4mm)之大小者,於圓形狀之基板時,可較好地使用6吋(直徑152.4mm)、8吋(直徑203.2mm)之大小者,於大型基板時,可較好地使用G8(1,220×1,400mm方形)、G10(1,620×1,780mm方形)之大小者。 Examples of substrates to be polished using the polishing material of the present invention include synthetic quartz glass substrates, lithium tantalate substrates, silicon substrates, glass substrates for HDD, soda-lime glass substrates, etc. However, the polishing of the present invention In particular, the material can be used in the polishing step when manufacturing synthetic quartz glass substrates used for polishing photomasks, nanoimprints, and liquid crystal filters. For example, when the size of the substrate is a rectangular substrate, the size of 5 inches square (127.0×127.0mm) and 6 inches square (152.4×152.4mm) can be used better. Use 6 inches (Diameter 152.4mm), 8 inches (Diameter 203.2mm), for large substrates, G8 (1,220×1,400mm square) and G10 (1,620×1,780mm square) are preferred.
本發明之膠體二氧化矽研磨材可較好地使用 於粗研磨基板後實施之半最終研磨步驟或最終研磨步驟中,使用例如麝皮研磨布等。於最終研磨步驟中使用時,可以研磨壓60~200gf/cm2進行。 The colloidal silica polishing material of the present invention can be preferably used in a semi-final polishing step or final polishing step performed after rough-grinding a substrate, for example, a musk leather polishing cloth or the like. When used in the final polishing step, the polishing pressure can be 60 to 200 gf/cm 2 .
且,粗研磨係經過使錠塊成型、退火 (annealing)、切片加工、倒角、摩擦、用以使基板表面 鏡面化之研磨步驟而實施。 Moreover, the rough grinding is done by forming and annealing the ingot (annealing), slicing, chamfering, rubbing, used to make the substrate surface The mirror polishing step is carried out.
於基板表面處於更高平滑、低缺陷時,於半 最終步驟中使用本發明之膠體二氧化矽研磨材,於最終研磨步驟中可使用更小粒徑之膠體二氧化矽研磨粒進行研磨。 When the surface of the substrate is smoother and less defective, In the final step, the colloidal silica abrasive material of the present invention is used. In the final polishing step, colloidal silica abrasive particles with a smaller particle size can be used for grinding.
又,使用本發明之研磨材之研磨方法,一般 為批式兩面研磨,亦可為以單片研磨、逐片式研磨及該等之組合而實施者。 In addition, the polishing method using the polishing material of the present invention is generally It is a batch-type two-sided grinding, and it can also be implemented by single-piece grinding, piece-by-piece grinding, and combinations thereof.
以下顯示實施例及比較例,具體說明本發明,但本發明不限於下述實施例。 Examples and comparative examples are shown below to specifically explain the present invention, but the present invention is not limited to the following examples.
對經切片之6吋見方之合成石英玻璃基板(厚6.35mm)進行摩擦、粗研磨後,投入最終研磨。使用軟質之麝皮製研磨布,使用平均一次粒徑為50nm、會合度為1.2之真球型膠體二氧化矽研磨粒(日產化學工業(股)製,商品名SNOWTEX XL)為平均一次粒徑為100nm、會合度為2.5之會合型膠體二氧化矽研磨粒(多摩化學工業(股)製,商品名:TCSOL 704)之3倍量(質量比)之SiO2濃度40質量%之膠體二氧化矽水分散液作為研磨材。使用兩面研磨機,研磨壓為100gf/cm2、研磨速率0.2μm/分鐘。 The 6-inch square synthetic quartz glass substrate (6.35 mm thick) was rubbed and rough ground, and then put into final polishing. Use soft musk leather abrasive cloth, use true spherical colloidal silica abrasive particles (manufactured by Nissan Chemical Industry Co., Ltd., trade name SNOWTEX XL) with an average primary particle size of 50 nm and a convergence degree of 1.2 as the average primary particle size Colloidal dioxide with a SiO 2 concentration of 40% by mass of 3 times the amount (mass ratio) of 100 times of the colloidal colloidal silica abrasive grains (made by Tama Chemical Industry Co., Ltd., trade name: TCSOL 704) of 100 nm and a convergence degree of 2.5 The silicon water dispersion is used as an abrasive. Using a two-sided grinding machine, the grinding pressure was 100 gf/cm 2 and the grinding rate was 0.2 μm/minute.
研磨結束後,洗淨、乾燥,並使用雷射共焦 光學系高感度缺陷裝置(LASER TECH(股)製)進行缺陷檢查後,50nm等級以上之缺陷為1.5個。且,面粗糙度(Ra)使用原子力顯微鏡(AFM)測定後,Ra=0.14nm。且,未檢測到擦傷或坑洞之研磨起因之傷痕。 After grinding, wash, dry and use laser confocal After the defect inspection of the optical system high-sensitivity defect device (made by LASER TECH Co., Ltd.), the number of defects above 50nm level was 1.5. And, after measuring the surface roughness (Ra) using an atomic force microscope (AFM), Ra=0.14 nm. Moreover, no scratches caused by abrasions or lapping were detected.
使用與實施例1相同之材料,使用軟質之麝皮製研磨布,使用含有平均一次粒徑為80nm、會合度為1.1之真球型膠體二氧化矽研磨粒(FUJIMI INCORPORATED製,商品名:COMPOL-80)之SiO2濃度40質量%之膠體二氧化矽水分散液作為研磨材。使用兩面研磨機,研磨壓為100gf/cm2、研磨速率0.07μm/分鐘。 Using the same material as in Example 1, using soft musk leather abrasive cloth, using spherical spherical colloidal silica abrasive grains (manufactured by FUJIMI INCORPORATED, containing an average primary particle diameter of 80 nm and a degree of convergence of 1.1, trade name: COMPOL -80) Colloidal silica aqueous dispersion with a SiO 2 concentration of 40% by mass is used as an abrasive. Using a double-sided grinder, the grinding pressure was 100 gf/cm 2 and the grinding rate was 0.07 μm/min.
研磨結束後,洗淨、乾燥,與實施例1同樣進行缺陷檢查後,50nm等級以上之缺陷為1.8個。且,與實施例1同樣測定面粗糙度(Ra)後,Ra=0.14nm。且,未檢測到擦傷或坑洞之研磨起因之傷痕。 After polishing, it was washed and dried, and after performing defect inspection in the same manner as in Example 1, the number of defects above 50 nm was 1.8. In addition, after measuring the surface roughness (Ra) in the same manner as in Example 1, Ra=0.14 nm. Moreover, no scratches caused by abrasions or lapping were detected.
使用與實施例1相同之材料,使用軟質之麝皮製研磨布,使用含有平均一次粒徑為110nm、會合度為1.2之會合型膠體二氧化矽研磨粒(日產化學工業(股)製,商品名:SNOWTEX ZL)之SiO2濃度20質量%之膠體二氧化矽水分散液作為研磨材。使用兩面研磨機,研磨壓為 100gf/cm2、研磨速率0.06μm/分鐘。 Using the same material as in Example 1, using soft musk leather abrasive cloth, using condensed colloidal silica abrasive particles (manufactured by Nissan Chemical Industry Co., Ltd., containing an average primary particle diameter of 110 nm and a convergence degree of 1.2) Name: SNOWTEX ZL) SiO 2 concentration 20% by mass of colloidal silica aqueous dispersion as an abrasive. Using a double-sided grinder, the grinding pressure was 100 gf/cm 2 and the grinding rate was 0.06 μm/min.
研磨結束後,洗淨、乾燥,與實施例1同樣進行缺陷檢查後,50nm等級以上之缺陷為2.1個。且,與實施例1同樣測定面粗糙度(Ra)後,Ra=0.25nm。且,未檢測到擦傷或坑洞之研磨起因之傷痕。 After polishing, it was washed and dried, and after performing defect inspection in the same manner as in Example 1, the number of defects with a level of 50 nm or higher was 2.1. In addition, after measuring the surface roughness (Ra) in the same manner as in Example 1, Ra=0.25 nm. Moreover, no scratches caused by abrasions or lapping were detected.
對經切片之8吋之合成石英玻璃基板(厚0.775mm)進行摩擦、粗研磨後,使用與實施例1相同之研磨布,使用平均一次粒徑為60nm、會合度為1.3之真球型膠體二氧化矽研磨粒(FUJIMI INCORPORATED製,商品名:COMPOL-120)為平均一次粒徑為90nm、會合度為2.8之會合型膠體二氧化矽研磨粒(扶桑化學工業(股)製,商品名:PL-7H)之4倍量(質量比)之SiO2濃度35質量%之膠體二氧化矽水分散液作為研磨材。使用兩面研磨機,研磨壓為100gf/cm2、研磨速率0.07μm/分鐘。 8-inch sliced After the synthetic quartz glass substrate (thickness 0.775mm) was rubbed and rough polished, the same polishing cloth as in Example 1 was used, and true spherical colloidal silica abrasive particles with an average primary particle size of 60nm and a convergence degree of 1.3 were used ( FUJIMI INCORPORATED, trade name: COMPOL-120) is the 4th type of colloidal colloidal silica abrasive particles with an average primary particle size of 90 nm and a convergence degree of 2.8 (made by Fusang Chemical Industry Co., Ltd., trade name: PL-7H) No. 4 A double amount (mass ratio) of colloidal silicon dioxide aqueous dispersion with a SiO 2 concentration of 35% by mass is used as an abrasive. Using a double-sided grinder, the grinding pressure was 100 gf/cm 2 and the grinding rate was 0.07 μm/min.
研磨結束後,洗淨、乾燥,與實施例1同樣進行缺陷檢查後,50nm等級以上之缺陷為2.0個。且,與實施例1同樣測定面粗糙度(Ra)後,Ra=0.17nm。且,未檢測到擦傷或坑洞之研磨起因之傷痕。 After polishing, it was washed and dried, and after performing defect inspection in the same manner as in Example 1, there were 2.0 defects of 50 nm level or higher. In addition, after measuring the surface roughness (Ra) in the same manner as in Example 1, Ra=0.17 nm. Moreover, no scratches caused by abrasions or lapping were detected.
使用與實施例2相同之材料,使用軟質之麝皮製研磨 布,使用含有平均一次粒徑為80nm、會合度為1.1之真球型膠體二氧化矽研磨粒(FUJIMI INCORPORATED製,商品名:COMPOL-80)之SiO2濃度40質量%之膠體二氧化矽水分散液作為研磨材。使用兩面研磨機,研磨壓為100gf/cm2、研磨速率0.01μm/分鐘。 The same material as in Example 2 was used, a soft musk leather abrasive cloth was used, and a spherical spherical colloidal silica abrasive grain (manufactured by FUJIMI INCORPORATED, containing a mean primary particle diameter of 80 nm and a degree of convergence of 1.1, trade name: COMPOL -80) Colloidal silica aqueous dispersion with a SiO 2 concentration of 40% by mass is used as an abrasive. Using a double-sided grinding machine, the grinding pressure was 100 gf/cm 2 and the grinding rate was 0.01 μm/min.
研磨結束後,洗淨、乾燥,與實施例1同樣進行缺陷檢查後,50nm等級以上之缺陷為2.8個。且,與實施例1同樣測定面粗糙度(Ra)後,Ra=0.15nm。且,未檢測到擦傷或坑洞之研磨起因之傷痕。 After polishing, it was washed and dried, and after defect inspection was performed in the same manner as in Example 1, the number of defects above 50 nm was 2.8. In addition, after measuring the surface roughness (Ra) in the same manner as in Example 1, Ra=0.15 nm. Moreover, no scratches caused by abrasions or lapping were detected.
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