CN1927540A - Slice sticking method for hard brittle crystal thin substrate grinding and polishing - Google Patents
Slice sticking method for hard brittle crystal thin substrate grinding and polishing Download PDFInfo
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- CN1927540A CN1927540A CN 200610047695 CN200610047695A CN1927540A CN 1927540 A CN1927540 A CN 1927540A CN 200610047695 CN200610047695 CN 200610047695 CN 200610047695 A CN200610047695 A CN 200610047695A CN 1927540 A CN1927540 A CN 1927540A
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- crystal thin
- hard brittle
- thin substrate
- brittle crystal
- temperature
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- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 239000013078 crystal Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000005498 polishing Methods 0.000 title claims description 16
- 239000000853 adhesive Substances 0.000 claims abstract description 9
- 230000001070 adhesive effect Effects 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 239000007767 bonding agent Substances 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001683 neutron diffraction Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to an adhesive method used in rigid crystal substrate furnishing. Wherein, it uses low-temperature and high-temperature adhesives to adhere two surfaces of substrate and two carrier tables; uses the low-temperature adhesive to adhere the lower surface with the first table, and not discharge the substrate when reaches furnish demand, then uses high-temperature adhesive to adhere the upper surface of substrate on the second table, heats the first table to separate the lower surface from the first table, and furnishes the lower surface to reach demand. The invention can reduce the deformation, to improve accuracy.
Description
Technical field
The invention belongs to hard and crisp crystal substrate ultraprecise manufacture field.
Background technology
Along with the fast development of high-precision technology such as microelectronics, photoelectron, semiconductor, optical element, sensor and laser technology, more and more harsher to the machining accuracy and the quality requirement of hard and crisp crystal substrate.The surface roughness that the not only very thin thickness of substrate, and requirement is extremely low and the very high flatness and the depth of parallelism.As thickness requirement 10～50 μ m of piezoelectric quartz oscillator substrate, flatness requires 0.01～0.05 μ m, Ra≤0.01 μ m; Optical element thickness requirement 50～100 μ m, flatness requires 0.01～0.05 μ m, Ra≤0.01 μ m; As the monocrystalline MgO substrate of neutron diffraction substrate, thickness requirement is less than 250 μ m, and flatness is less than λ/6, Ra≤0.2nm.Because double-faced grinding and polishing machine processing plane substrate can obtain the very high flatness and the depth of parallelism in theory, for the ultraprecise processing of hard and crisp crystal substrate, mainly be processed as the master at present with twin grinding and polishing.But, when hard and crisp crystal substrate is very thin, require thinner retaining ring, not only the retaining ring manufacturing is very difficult, and retaining ring is easy to generate distortion and outer rim collapses problems such as tooth, and unsettled process causes fragment rate very high.So ultra-thin hard crisp substrate is not suitable for still must adopting the machined of single face grinding and polishing with double-faced grinding and polishing machine processing.
At present, the single face grinding and polishing processing technology of LED reverse mounting type is:
1) with binding agent crystal substrates is bonded on the objective table;
2) its upper surface is ground, polishes processing, reach the requirement quality.
3) the dissolving binding agent takes off crystal substrates, with binding agent the substrate surface that processes is bonded on the objective table again, and the substrate lower surface is ground, polishes processing, reaches the requirement quality,
4) unload crystal substrates, all machine.
During with this processes crystal substrates, because adding trade union, grinding and polishing produce residual stress at the substrate surface layer, when the dissolving binding agent, after taking off crystal substrates, the crystal substrates surface stress discharges and produces buckling deformation, with the machined surface positioning bonding of buckling deformation, when grinding and polishing the processing another side, will cause the flatness and the parallelism error of substrate finished surface again.Particularly for thin crystal wafer processing, the buckling deformation phenomenon is more obvious, is difficult to guarantee that crystal substrates reaches high flatness and depth of parallelism requirement.
Summary of the invention
The present invention seeks to invent a kind of new method for adhering piece of hard brittle crystal thin substrate grinding and polishing processing that is used for, solve the serious buckling deformation problem that existing LED reverse mounting type processing back occurs, thereby make LED reverse mounting type reach the high flatness and the depth of parallelism.
The method for adhering piece of a kind of hard brittle crystal thin substrate grinding and polishing of the present invention, the technical scheme that adopts is to adopt bonding agent that hard brittle crystal thin substrate is bonded on the objective table, it is characterized in that, adopt two kinds of binding agents of low temperature and high temperature that two surfaces of hard brittle crystal thin substrate and two objective tables are bondd respectively, the steps include:
1) at first with the low temperature bonding agent lower surface of hard brittle crystal thin substrate is bonded on first objective table, the effective bonding temp scope of low-temperature adhesion is at 35～70 ℃;
2) the hard brittle crystal thin substrate upper surface is ground and polishes; After reaching the surface quality requirement;
3) need not take off hard brittle crystal thin substrate, with high-temperature agglomerant the upper surface of hard brittle crystal thin substrate is bonded on second objective table again; Its effective bonding temp scope is at 80～160 ℃, and the hardening time of high temperature bonding is at 5～30min;
4) first objective table of heating, the control heating-up temperature lost efficacy the low temperature bonding agent, guaranteed that simultaneously high-temperature agglomerant did not lose efficacy, and the hard brittle crystal thin substrate lower surface is separated with first objective table;
5) clean, adopt acetone, alcohol organic solvent to clean the residual low temperature bonding agent of hard brittle crystal thin substrate lower surface;
6) again the lower surface of hard brittle crystal thin hard brittle crystal thin substrate is ground and polishes, reach the surface quality requirement;
7) unload the hard brittle crystal thin hard brittle crystal thin substrate;
8) clean, adopt acetone, alcohol organic solvent to clean high-temperature agglomerant on the hard brittle crystal thin substrate, finish whole processing.
The low temperature bonding agent is low temperature bonding wax or low temperature bonding glue, and high-temperature agglomerant is liquid high temperature resistant bonded adhesives.
The present invention has following positive effect: easy and simple to handle, cost is low, environmentally safe, and the buckling deformation that machines the back crystal microchip has obtained effective inhibition, and the surface precision of processing back crystal substrates is greatly improved, and sees accompanying drawing 1.
Description of drawings
Fig. 1 adopts adhesive method grinding and polishing processing of the present invention back MgO substrate surface pattern, and Fig. 2 is a common method for adhering piece grinding and polishing processing back MgO substrate surface pattern.
The specific embodiment
In conjunction with the accompanying drawings, describe concrete enforcement of the present invention in detail.As print, select the identical substrate of two packet sizes with monocrystalline MgO substrate for use, original depth is elected 350 μ m as, adopts common adhesive method and adhesive method of the present invention respectively two groups of substrates to be cooked the twin polishing test.Because the thickness of crystal substrates is thin more, responsive more to the residual stress after the processing, buckling deformation is also obvious more, so in order to make test have more convincingness, the final thickness of two groups of prints all is worked into 110 μ m.Hard and crisp crystal LED reverse mounting type abrasive polishing process of the present invention is:
With the low temperature bonding agent crystal substrates is bonded on first objective table, after grinding, polishing, meets the requirements of surface quality; Need not take off substrate, the reusable liquid high-temperature agglomerant is bonded in the upper surface of crystal substrates on second objective table; Heat first objective table, the control heating-up temperature lost efficacy the low temperature bonding agent, guaranteed that simultaneously high-temperature agglomerant did not lose efficacy; The crystal substrates lower surface adopts acetone, alcohol organic solvent to clean the residual low temperature bonding glue of substrate lower surface with after first objective table separates; Lower surface to crystal substrates grinds and polishes, and after reaching surface quality and requiring, unloads crystal substrates; Adopt acetone, alcohol organic solvent to clean the high temperature bond glue on the crystal substrates then, finish whole processing.
Low temperature bonding wax is adopted in the low temperature bonding agent in the experiment, and its melt temperature is 40 ℃, and high-temperature agglomerant is liquid high temperature resistant bonding glue, and its effective sticking temperature is 0～120 ℃, hardening time 5～10min.Bonding wax, low temperature bonding glue and high temperature bond glue should be soluble in organic solvents such as acetone, alcohol, are easy to clean.The results are shown in accompanying drawing 1 after the processing, with the results are shown in accompanying drawing 2 after the common method for adhering piece processing.From processing result as can be seen, tangible buckling deformation has taken place with common method for adhering piece processing back MgO substrate, and tangible buckling deformation do not occur, thereby surface precision is greatly improved with the MgO substrate surface that method for adhering piece of the present invention processes.
Claims (2)
1. method for adhering piece that is used for hard brittle crystal thin substrate grinding and polishing, adopt bonding agent that hard brittle crystal thin substrate is bonded on the objective table, it is characterized in that, adopt two kinds of binding agents of low temperature and high temperature that two surfaces of hard brittle crystal thin substrate and two objective tables are bondd respectively, the steps include:
1) at first with the low temperature bonding agent lower surface of hard brittle crystal thin substrate is bonded on first objective table, the effective bonding temp scope of low-temperature adhesion is at 35～70 ℃;
2) the hard brittle crystal thin substrate upper surface is ground and polishes; After reaching the surface quality requirement;
3) need not take off hard brittle crystal thin substrate, with high-temperature agglomerant the upper surface of hard brittle crystal thin substrate is bonded on second objective table again; Its effective bonding temp scope is at 80～160 ℃, and the hardening time of high temperature bonding is at 5～30min;
4) first objective table of heating, the control heating-up temperature lost efficacy the low temperature bonding agent, guaranteed that simultaneously high-temperature agglomerant did not lose efficacy, and the hard brittle crystal thin substrate lower surface is separated with first objective table;
5) clean, adopt acetone, alcohol organic solvent to clean the residual low temperature bonding agent of hard brittle crystal thin substrate lower surface;
6) again the lower surface of hard brittle crystal thin hard brittle crystal thin substrate is ground and polishes, reach the surface quality requirement;
7) unload the hard brittle crystal thin hard brittle crystal thin substrate;
8) clean, adopt acetone, alcohol organic solvent to clean high-temperature agglomerant on the hard brittle crystal thin substrate, finish whole processing.
2. according to the said method for adhering piece of claim 1, it is characterized in that the low temperature bonding agent is low temperature bonding wax or low temperature bonding glue, high-temperature agglomerant is liquid high temperature resistant bonded adhesives.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100476954A CN100506483C (en) | 2006-09-05 | 2006-09-05 | Slice sticking method for hard brittle crystal thin substrate grinding and polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100476954A CN100506483C (en) | 2006-09-05 | 2006-09-05 | Slice sticking method for hard brittle crystal thin substrate grinding and polishing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1927540A true CN1927540A (en) | 2007-03-14 |
| CN100506483C CN100506483C (en) | 2009-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100476954A Expired - Fee Related CN100506483C (en) | 2006-09-05 | 2006-09-05 | Slice sticking method for hard brittle crystal thin substrate grinding and polishing |
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| Country | Link |
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| CN (1) | CN100506483C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102508328A (en) * | 2011-11-08 | 2012-06-20 | 昆山明本光电有限公司 | Method for producing ultrathin quartz crystal phase retardation plate |
| CN104849643A (en) * | 2015-05-15 | 2015-08-19 | 上海华力微电子有限公司 | Method of improving uniformity in case of level removal of chip |
| CN115302344A (en) * | 2022-09-29 | 2022-11-08 | 中国电子科技集团公司第四十六研究所 | Grinding method of small-size soft and brittle crystal material wafer |
-
2006
- 2006-09-05 CN CNB2006100476954A patent/CN100506483C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102508328A (en) * | 2011-11-08 | 2012-06-20 | 昆山明本光电有限公司 | Method for producing ultrathin quartz crystal phase retardation plate |
| CN104849643A (en) * | 2015-05-15 | 2015-08-19 | 上海华力微电子有限公司 | Method of improving uniformity in case of level removal of chip |
| CN104849643B (en) * | 2015-05-15 | 2019-01-18 | 上海华力微电子有限公司 | A method of improving uniformity when chip removes level |
| CN115302344A (en) * | 2022-09-29 | 2022-11-08 | 中国电子科技集团公司第四十六研究所 | Grinding method of small-size soft and brittle crystal material wafer |
| CN115302344B (en) * | 2022-09-29 | 2023-03-14 | 中国电子科技集团公司第四十六研究所 | Grinding method of small-size soft and brittle crystal material wafer |
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| Publication number | Publication date |
|---|---|
| CN100506483C (en) | 2009-07-01 |
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