TWI683785B - Rectangular substrate for imprint lithography and making method - Google Patents

Abstract

A rectangular substrate is prepared by providing a starting rectangular substrate having front and back surfaces and four side surfaces as ground, and pressing a rotary polishing pad perpendicularly against one side surface under a constant pressure, and relatively moving the rotary polishing pad and the substrate parallel to the side surface, for thereby polishing the side surface of the substrate. In the imprint lithography, the rectangular substrate is capable of controlling compression and pattern shape at a high accuracy and thus transferring a complex pattern of fine feature size to a recipient.

Description

Rectangular substrate for imprinting lithography and manufacturing method thereof

The present invention relates to a rectangular shape for imprinting lithography, such as nano-imprinting used as an original plate, required for forming a concave-convex shape on a surface in the manufacturing process of electronic devices, optical parts, memory elements, biological elements, etc. Substrate and its manufacturing method.

mm、100

mm、150

mm、200

mm之 圓形等，隨著用途而使用各式各樣的形狀。 In recent years, in the manufacture of electronic devices, optical components, memory elements, bio-elements, etc., in addition to further high performance and high definition, it is also a common situation to require a low cost of manufacturing. In this trend, compared with the previous lithography technology, the imprint lithography technology, which can be finely processed at low cost, has gradually attracted attention. In the imprint lithography technology, the concave-convex pattern is formed by a mechanical method. That is, the concave-convex pattern of the mold is transferred by pressing the substrate for the mold having a desired concave-convex pattern on the surface to the substrate to be transferred having a resin layer of a predetermined thickness (Patent Document 1: Japanese Special Table 2005-533393 Bulletin). The substrate used in imprinting lithography is, for example, a 65 mm square or 152 mm square rectangle, or 50

mm, 100

mm, 150

mm, 200

Various shapes such as a circle of mm are used depending on the application.

In imprint lithography, the resin layer to which the concave-convex pattern is transferred by pressing is preserved by curing it, but mainly by means of curing by ultraviolet rays, and by heating As for the method of hardening, it is necessary to maintain the parallelism of the substrate for the mold and the substrate for the transfer with the resin layer so that the pressed surface is pressed with a uniform pressure, which is very important . At this time, the mold substrate for drawing the concave-convex pattern is required to have high shape accuracy (Patent Document 2: Japanese Patent Laid-Open No. 3-54569).

In recent years, there has been an increasing demand for forming a finer pattern or a more complicated pattern on a substrate for a mold using ultraviolet nanoimprinting or the like and then transferring it. In high-definition imprint lithography, very precise and high-precision positioning, pressing control, and pattern shape control are required. For this reason, even in imprint lithography using a rectangular substrate, the rectangular substrate itself is required to have high shape accuracy.

For example, in the form using the rectangular substrate disclosed in Patent Document 3 (Japanese Patent Publication No. 2009-536591), the end surface of the rectangular substrate is replaced by an actuation system including a plurality of actuators surrounding the rectangular substrate Pressing with a plurality of forces causes the pressing portion of the substrate to bend and deform to perform high-precision pressing and control of the pattern shape.

[Prior Technical Literature] [Patent Literature]

[Patent Literature 1] Japanese Special Publication No. 2005-533393

[Patent Document 2] Japanese Patent Laid-Open No. 3-54569

[Patent Document 3] Japanese Special Publication No. 2009-536591

In such a situation, the rectangular substrate used in imprint lithography is required to have high shape accuracy, especially on the side of the substrate that is pressed by the actuator system, high flatness and side are required The orthogonality of each other. If the sides are not very flat, or the sides are not orthogonal to each other, even if the sides are pressurized by the above actuator system, the predetermined pressure cannot be transmitted, or the unpredictable distortion occurs, and the bending or the precision cannot be controlled. Deformed.

The present invention was developed in view of the above-mentioned matters, and aims to provide a rectangular substrate suitable for controlling the pressing and the pattern shape with high accuracy in imprint lithography.

The present inventors have worked hard to achieve the above-mentioned purpose, and found that the use of a rectangular substrate for imprinting lithography with high side flatness is useful for solving the problems in the foregoing, and therefore derived the present invention.

Therefore, the present invention provides a rectangular substrate for imprint lithography as shown below and a manufacturing method thereof.

[1]

A method for manufacturing a rectangular substrate for imprinting lithography, characterized in that the side of the substrate is the side of the rectangular substrate for imprinting lithography that has been processed by grinding, and the surface is pressed and rotated with a certain pressure in the vertical direction In the polishing pad, the rotary polishing pad is moved in parallel to the side of the front note rectangular substrate relative to the front note rectangular substrate, and the side surface of the front note rectangular substrate is polished.

[2]

The method for manufacturing a rectangular substrate for imprinting lithography as described in [1], wherein the moving speed of the relative movement of the rotary polishing pad and the rectangular substrate during the parallel movement of the preface is as the side surface of the rectangular substrate is polished The position changes and grinds.

[3]

The method for manufacturing a rectangular substrate for imprint lithography as described in [2], in which the moving speed when the center of the rotary polishing pad is located in the central region of the longitudinal direction of the side surface of the rectangular substrate is located on the side surface The moving speed in the case of the end area in the longitudinal direction is relatively fast and the grinding is performed.

[4]

The method for manufacturing a rectangular substrate for imprinting lithography as described in any one of [1] to [3], wherein the moving speed of the relative movement of the rotary polishing pad and the rectangular substrate during parallel movement as described in the previous The roughness of the side surface of the rectangular substrate is changed and polished.

[5]

The method for manufacturing a rectangular substrate for imprint lithography as described in [4], wherein the moving speed on the convex portion of the side surface is fast, and the moving speed on the concave portion of the side surface is slow, and polishing is performed.

[6]

The method for manufacturing a rectangular substrate for imprint lithography as described in any one of [1] to [5], wherein the rectangular substrate and the rotary substrate are further polished along the short side direction (width direction) of the side surface of the rectangular substrate The pads are relatively moved and polished.

[7]

The method for manufacturing a rectangular substrate for imprint lithography as described in any one of [1] to [6], wherein after grinding one side of the aforementioned rectangular substrate, the substrate is rotated by 90° one by one and the remaining grinding The bottom side surface is used to polish all four side surfaces of the rectangular substrate.

[8]

The method for manufacturing a rectangular substrate for imprinting lithography as described in any one of [1] to [7], wherein before and after the process of forming the side surface by grinding or after it will be processed by grinding The process of polishing the side surface also includes the process of forming non-penetrating holes or grooves by grinding on the back surface of the rectangular substrate.

[9]

The method for manufacturing a rectangular substrate for imprint lithography as described in [8], which further includes: grinding the side and bottom surfaces of the non-through holes or grooves that have been ground.

[10]

The method for manufacturing a rectangular substrate for imprint lithography as described in [9], wherein the process of polishing the side and bottom surfaces of the previously non-penetrating holes or grooves is that the non-processed by grinding The side of the through hole or groove And the bottom surface, the process of making the grinding processing part of the rotary grinding tool contact with a certain independent pressure to grind the grinding surface of the side surface and the bottom surface.

[11]

A rectangular substrate for imprinting lithography, characterized in that it has a front and back surface and four side surfaces, and a rectangular substrate for imprinting lithography is imprinted on the surface with a pattern caused by unevenness, wherein the front side is flat The degree system is 20 μm or less.

[12]

The rectangular substrate for imprint lithography as described in [11], wherein the angle between the side surfaces of the rectangular substrate adjacent to each other is within a range of 90±0.1°.

[13]

The rectangular substrate for imprint lithography as described in [11] or [12], wherein each side surface of the rectangular substrate is a mirror surface.

[14]

The rectangular substrate for imprint lithography as described in [13], wherein the surface roughness (Ra) of each side of the rectangular substrate is 0.01 to 2 nm.

[15]

The rectangular substrate as described in any one of [11] to [14], wherein the rectangular substrate has a non-penetrating hole or groove on the back surface.

According to the present invention, high precision can be achieved when imprinting lithography The pressure and pattern shape are controlled to a high degree, making it possible to transfer high-definition and complex patterns.

1‧‧‧rectangular substrate

2‧‧‧surface

3‧‧‧Back

4‧‧‧Side

4a‧‧‧Side

4b‧‧‧Chamfered side

4c‧‧‧Chamfered side

4d‧‧‧curved corner

5‧‧‧The pattern caused by bumps

6‧‧‧Table structure

7‧‧‧ Non-through hole

8‧‧‧Ditch

11‧‧‧Positioning fixture

12‧‧‧Locating pin

13‧‧‧The protruding amount of the positioning pin

14‧‧‧A straight line connecting the tips of the positioning pins

15‧‧‧ substrate holding table

16‧‧‧rectangular substrate

21‧‧‧Rotary polishing pad

22‧‧‧Pressure mechanism with locking mechanism

23‧‧‧rotation axis

24‧‧‧ Object

31‧‧‧Rectangular substrate side central area

32‧‧‧End area on the side of rectangular substrate

33‧‧‧Movement direction of the rotary polishing pad

41‧‧‧Straight line parallel to the width direction of the side of the rectangular substrate

42‧‧‧swing amplitude of rotating polishing pad

51‧‧‧Motion axis of rotating polishing pad

52‧‧‧Rotary polishing pad

53‧‧‧Air pressure piston pressurizing mechanism

54‧‧‧Rotary polishing pad

55‧‧‧Air pressure piston pressurizing mechanism

56‧‧‧ 5-axis multi-joint robot arm

[FIG. 1] An embodiment of a rectangular substrate for imprint lithography of the present invention, (A) is a perspective view, (B) is a cross-sectional view along line BB in (A), and (C) is a The enlarged view of one corner of the substrate is omitted from the oblique view, and (D) is the enlarged view of one side of the substrate from the front view.

[Fig. 2] Another embodiment of the rectangular substrate for imprint lithography of the present invention, (A) is a perspective view, and (B) is a cross-sectional view taken along line B-B in (A).

[Fig. 3] In another embodiment of a rectangular substrate for imprint lithography, which has been processed on the back surface, (A) is a rectangular substrate with non-through holes on the back surface, and (B) is a rectangular substrate with grooves on the back surface. Oblique view.

[FIG. 4] Another embodiment of a rectangular substrate for imprint lithography that has been processed on the back surface, (A) is a plan view of a rectangular substrate having a non-penetrating hole on the back surface of the rectangular substrate shown in FIG. 1, (B ) Is a plan view of a rectangular substrate with non-penetrating holes on the back of the rectangular substrate shown in FIG. 2, and (C) and (D) are cross-sectional views of (A) and (B), respectively.

[Fig. 5] Another embodiment of a rectangular substrate for imprint lithography that has been processed on the back surface, (A) is a plan view of a rectangular substrate having grooves on the back surface of the rectangular substrate shown in FIG. 1, (B) is a The rectangular substrate shown in Figure 2 A plan view of a rectangular substrate with grooves on the back, (C) and (D) are cross-sectional views of (A) and (B).

[FIG. 6] An explanatory diagram of an example of a method of using a positioning jig to hold a rectangular substrate, (A) is a positional relationship between a straight line connecting the tips of positioning pins and a substrate holding table, (B) is on the substrate holding table The state on which the rectangular substrate is set.

FIG. 7 is an explanatory diagram of an example of a method of polishing the rotary polishing pad side by side along the width direction of the side surface of the rectangular substrate.

[Fig. 8] A schematic view of an example of a side mirroring device, (A) is a state where a rectangular substrate is provided, and (B) is a state where a rectangular substrate is being polished.

1 and 2 illustrate an example of a rectangular substrate for imprint lithography according to the present invention. As shown in FIGS. 1 and 2, the substrate 1 is a quadrangular plate-like substrate, and has two faces and four side faces 4 that face the front face 2 and the back face 3 facing each other. One of the surfaces (surfaces) of the opposing front and back surfaces is engraved with the pattern 5 or mesa structure 6 caused by the unevenness used in imprint lithography. Generally, the four corners of the quadrangular substrate are processed into a curved shape, and the substrate has a main side surface 4a and a curved corner portion 4d that smoothly connects the main side surfaces with each other. Further, at the boundary between the main side surface 4a and the curved corner portion 4d and the front surface 2 and the rear surface 3, chamfered portions 4b and 4c are formed, respectively.

The rectangular substrate system for imprinting lithography of the present invention is: The flatness of the side surface is 20 μm or less, preferably 10 μm or less, and more preferably 5 μm or less. The flatness of the side surface of the substrate refers to the maximum value of the distance between the reference surface and the convex portion of the side surface when the least square plane of the side surface of the substrate is used as the reference surface, and the distance from the concave portion of the reference surface and the side surface Sum of the maximum value, the lower the value, the higher the flatness. The flatness can be measured by, for example, making the laser light shining on the surface of the substrate to cause it to be reflected, and using the optical interference method where the height difference of the surface of the substrate is observed by the phase deviation of the reflected light. Of it. For example, it can be measured using Zygo Mark IVxp or Zygo NewView 7300 manufactured by Zygo Corporation.

The flatness of the side surface of the substrate is the flatness of the main side surface 4a shown in FIG. 1. The flatness range does not include the curved corner portion 4d and the chamfered portions 4b and 4c. If the range of flatness is to be strictly regulated, it is a range that can be measured with good accuracy substantially, that is, a rectangular range obtained by subtracting a predetermined width from the periphery of the main side surface 4a. For example, when measuring the flatness of the side surface of the substrate by an optical interference method, the range near the periphery is close to the curved corner portion 4d and the chamfered portions 4b and 4c, so it may not be correct due to the influence of scattered light Determine the flatness. The extent to which the predetermined width at this time is set depends on the basic size and cannot be generalized, but for example, from both ends of the main side 4a in the long side direction, 2% of the length in the long side direction, ideally 5 %, more ideally, the width of the length of 10%, from both ends of the main side 4a in the short side direction (width direction), 5% of the length of the short side direction, the ideal system is 15%, the more ideal system is 20 The width of the length of% is regarded as the rectangular range after deducting the specified width, you can Defined as the flatness range.

When using a rectangular substrate for imprinting lithography with a flatness of more than 20 μm on the side, when imprinting lithography, for example, a pattern caused by unevenness of the pre-printed substrate is transferred onto a resin, the following various problems may occur.

For example, when an actuator system arranged in an imprinting lithography apparatus is used to press the side portions of a rectangular substrate for imprinting lithography, it is impossible for each of the plural actuators provided If the pressure is applied at a predetermined pressure, undesired distortion will occur in the pressing portion of the substrate, and bending or deformation of the pressing portion of the substrate cannot be controlled with high accuracy. As a result, for example, when the droplet-shaped resin on the substrate to be transferred is pressed, the gas interposed between the resins cannot be effectively controlled and squeezed out, and the gas will remain in the resin, resulting in post-transfer Defects in the pattern on the resin. In addition, the various parameters of the pattern shape (magnification characteristic, warpage/orthogonality characteristic, and mesa characteristic, etc.) of the pattern shape by deforming the pressing portion of the substrate with high precision control cannot be corrected smoothly, It is not possible to obtain patterns with the desired shape characteristics. Furthermore, by holding the rectangular substrate by pressing the side portion with low flatness, the rectangular substrate will be held in an inclined state, and the position of the pattern formed on the resin may deviate from the predetermined position.

In addition, the angle between the sides mentioned above is from the viewpoint that the side of the rectangular substrate is not rotated or tilted when the device is held by the device, and the desired position of the substrate for transfer can be accurately matched See, the ideal system is within 90°±0.1°, and the more ideal system is within 90°±0.05°. The angle between the sides of the substrate is the angle between the minimum two square planes of the side surfaces of the substrate. The angle between the sides of the substrate The measurement is, for example, according to the method of measuring squareness in the specifications of SEMI P1-92. The reference side should be any point on the side surface of the right angle, which is touched by the dial indicator, and the value from the dial indicator It can be measured by calculating the angle etc. from the distance to the measuring point.

The side surface of the rectangular substrate for imprint lithography of the present invention is preferably a mirror surface from the viewpoint of substrate cleanliness and strength, and the surface roughness (Ra) is 2 nm or less, especially 0.5 nm or less, Ideal. The surface roughness (Ra) can be measured in accordance with JIS B0601.

From the viewpoint of easy operation, the shape system of the rectangular substrate for imprint lithography of the present invention is preferably 20 to 300 mm square, especially 50 to 200 mm square. In addition, the thickness of the rectangular substrate for imprint lithography is 1~10mm, especially 3~8mm, which is ideal. If it is thinner than 1 mm, the substrate may be easily deformed due to the effect of the holding method or self-weight deflection when used in imprint lithography, resulting in mismatched pattern positions during transfer, and sometimes pattern errors. If it is thicker than 10 mm, the volume will increase, so the substrate becomes heavy and it is difficult to carry or handle, and sometimes the cost becomes high.

In addition, from the viewpoint of giving strength to the corners of the rectangular substrate to prevent peeling, cracking, and corner loss, and to prevent liquid accumulation and liquid residue when the substrate is washed and dried, the radius of curvature of the curved corners (R ) Is 0.5~10, more ideal is 1.5~3.5.

Here, the rectangular substrate system for imprint lithography of the present invention may include quartz glass, titania-doped quartz glass, silicon (Si), Silicon oxide film, polydimethylsiloxane (PDMS), nickel (Ni), sapphire, or hybrid materials of these. Among them, the quartz glass substrate has ultraviolet-transmitting properties, so it is often used to imprint lithography using ultraviolet rays in order to harden the resin layer. In addition, the quartz glass is also transparent in the visible light band, so positioning at the time of transfer is relatively easy, which has such advantages.

The surface of the rectangular substrate for imprint lithography of the present invention may also have a metal thin film or a photoresist film required for engraving patterns caused by unevenness. When forming a pattern on a mold substrate, an EB drawing device is used, but it is preferable to coat a metal thin film or a photoresist film on the front of it. The metal thin film or the photoresist film can be formed into a film with a thickness of 5 nm to 5 μm according to the usual method.

The substrate for a rectangular mold for imprint lithography of the present invention, as shown in FIGS. 3 to 5, may also have a non-penetrating hole 7 or groove 8 in the back surface 3. The non-penetrating holes 7 or grooves 8 are made in accordance with the shape or application of the device for assembling into the exposure device or the nanoimprint device.

In addition, the shape of the non-penetrating hole may be a circular shape, an elliptical shape, an oblong shape, a quadrangular shape, or a multi-rectangular shape, but the circular shape as shown in FIGS. 3(A) and 4 is preferable. Its size is a diameter if it is a round shape, a long diameter if it is an elliptical shape or an oblong shape, and a diagonal length of 5 to 150 mm if it is an angular shape, which is preferable. In the case of a groove, as shown in FIGS. 3(B) and 5, the two side walls 8a and 8b are preferably formed as planes parallel to each other, but the two side walls may not be parallel, or one or both side walls It is not straight but curved.

Next, a method of manufacturing a rectangular substrate for imprint lithography of the present invention will be described. In the present invention, the side surface of the substrate is the central area of the side surface of the rectangular substrate for imprint lithography that has been processed by grinding, and the rotary polishing pad is pressed with a certain pressure in the vertical direction, and the rotary polishing pad and the rectangular substrate are simultaneously pressed. Relatively move the side surfaces in parallel, and polish the central area of the longitudinal direction of the side surfaces of the rectangular substrate.

The rotary polishing pad is not limited as long as the polishing portion is a polishable rotating body, but a polishing cloth or the like is attached to the disk-shaped support as the polishing portion.

The material of the polishing part of the rotary polishing pad is foamed polyurethane, cerium oxide-impregnated polyurethane, zirconia-impregnated polyurethane, non-woven fabric, suede, rubber, wool felt, etc., as long as it can process and remove the workpiece, there is no type limited.

As a method of pressing the rotary polishing pad on the side of the rectangular substrate with a certain pressure, a method of using a pressurizing mechanism such as an air pressure piston, a load cell, or the like can be mentioned.

The polishing pressure for polishing the side and curved corners and chamfers is ideally 1 to 1,000,000 Pa (1 MPa), more preferably 1,000 to 100,000 Pa (0.1 MPa).

A method of moving the rotary polishing pad parallel to the rectangular substrate on the side of the substrate can be exemplified by placing the rectangular substrate on the substrate holding table, making the side of the substrate parallel to the moving axis, and fixing the substrate on the substrate holding table. Here, the moving axis means the moving axis of the rotary polishing pad moving on a straight line or the moving axis of the substrate holding table. As a tool The method of the body may be a method of using the positioning jig as shown in FIG. 6. The positioning jig 11 has a positioning pin 12 that can adjust the protrusion amount 13 by means of a bolt or a micrometer, etc. The protrusion amount of the positioning pin is such that the straight line 14 connecting the tips of the positioning pins to each other is the axis of movement In the parallel mode, use a micro picker to adjust separately. The rectangular substrate 16 is mounted on the substrate holding table 15, and the side surface is placed in contact with the positioning pin of the positioning jig, and then fixed. Examples of fixing methods for rectangular substrates include vacuum suction, mechanical clamping, permanent magnetic clamping, and electromagnetic clamping. The fixed rectangular substrate and the fixed base substrate can be adhered by wax, adhesive, UV curing resin, sealant, etc., or the fixed base substrate can be fixed by the method described above.

When grinding with a rotary polishing pad as described above, it is preferable to perform the grinding process in a state in which the grind grind slurry is interposed.

At this time, examples of the abrasive grain system include silicon dioxide, cerium oxide, corundum, white corundum (WA), FO (aluminum oxide), zirconium oxide, SiC, diamond, titanium dioxide, and germanium oxide. The particle size is 10 nm. ~10μm is ideal, these water slurry systems can be used ideally.

The rotating polishing pad system has a larger amount of polishing in the area near the outer periphery of the disc than the center portion. Therefore, if all parts of the side surface of the rectangular substrate are polished at a certain pressure and a certain speed, the end area of the side surface in the longitudinal direction The amount of grinding will be more than the central area of the long side, which may cause the side to become a convex ridge shape. Therefore, in the present invention, the moving speed during the relative parallel movement of the rotating polishing pad and the rectangular substrate is changed according to the polishing position to perform polishing. The ideal system is, compared to rotation The moving speed when the center of the polishing pad is located in the center region of the side surface of the rectangular substrate in the longitudinal direction, and the moving speed when it is located in the end region of the side surface in the longitudinal direction is a relatively rapid method of polishing, and is ideal. By grinding the side end area at a faster moving speed than the side center area, the side end area can be polished less than the side center area, and the end area can be prevented from being polished more than the center area. The field is over-polished.

In addition, the above-mentioned side end area assumes that when the length of one side of the substrate is 100, the length of one end side and the other end side of the one side is 25 or less, especially 15 to 25, The central area is ideal for areas between 50 and above, especially 50 to 70 between the two end areas, and more preferably for the length of one end and the other end to be 30 or less, especially 10 to 30. In terms of areas, the central area is an area between 40 and above, especially between 40 and 80.

Moreover, the moving speed when the rotary polishing pad and the rectangular substrate are moved in parallel can be changed according to the unevenness of the side surface of the rectangular substrate to perform polishing. For example, the flatness of the side surface of the rectangular substrate before polishing is measured in advance, and the moving speed is changed according to the uneven shape of the side surface, the moving speed is faster in the concave portion, and the moving speed is slower in the convex portion, etc. And control, you can get a flat side.

In the polishing by the rotary polishing pad, as shown in FIG. 7, the rotary polishing pad can be moved along the width direction of the side surface of the substrate relative to the rectangular substrate (shake up and down in the figure) relative to the situation. It moves parallel to the above-mentioned movement axis (sawtooth movement). Up and down The shaking is preferably performed by moving on a straight line parallel to the width direction of the side surface of the rectangular substrate. In addition, the up and down shaking range is preferably within a range where the rotating polishing pad contacts the side of the rectangular substrate. By performing the above-mentioned parallel movement to perform the grinding along with the up and down shaking, the grinding marks formed along the rotation locus of the rotating grinding pad on the side of the rectangular substrate can be reduced. 7 is an example of a method of fixing the position of a rectangular substrate and moving the rotary polishing pad up and down. The rotary polishing pad 21 is attached to a straight line 41 parallel to the width direction of the side surface of the rectangular substrate 16, and moves up and down, and moves in a rocking motion. FIG. 7 shows the position of the rotating polishing pad when it reaches the upper end and the lower end of the shaking range 42. The shaking range 42 is the range where the rotating polishing pad contacts the side of the rectangular substrate.

In the polishing performed by the rotary polishing pad, after the polishing of one side of the rectangular substrate is performed, the previous substrate is rotated 90° one by one, and the remaining sides are polished, and then all four sides of the rectangular substrate can be polished from the processing. In terms of accuracy and productivity, it is ideal. The method of rotating the substrate by 90° one by one can be a method of rotating the substrate holding table to which the rectangular substrate is fixed by a rotation mechanism with precise positioning function caused by a clutch tooth or a rotary encoder.

The front rectangular substrate is the front stage of the polishing performed by the rotary polishing pad of the previous paragraph, and the side surface is a substrate that has been ground by grinding processing. The side forming method caused by grinding processing is, for example, using a comprehensive processing machine or other numerically controlled working machine to rotate and move the whetstone under the grinding conditions without cracks, cracks, severe peeling, etc. The substrate is ground to form a side of a predetermined size and Of it. At this time, the curved corners and the chamfered portions may be formed by grinding in the same manner as the side surfaces as occasion demands.

Grinding processing is to use diamond grits, CBN grits, etc. fixed by electroplating or metal bonding, with a spindle rotation number of 100~30,000rpm, especially 1,000~15,000rpm, grinding speed of 1~10,000mm/min, Especially from 10 to 1,000 mm/min, it is ideal from the viewpoint of processing accuracy and productivity.

The curved corners and chamfers of the rectangular substrate for imprint lithography are polished and mirrored, which is ideal from the viewpoint of strength retention and cleanliness. Grinding of curved corners and chamfered parts should not contact the sides as much as possible. It is ideal to carry out methods that do not affect the processing accuracy of the sides. Specifically, there can be mentioned a method of performing the process while supplying the abrasive slurry and pressing the rotating polishing pad at a constant pressure while moving it along the shape of the curved corners and chamfers. When polishing with a rotary polishing pad, it is preferable to process in a state in which the abrasive grain slurry is interposed. The rotating polishing pad, pressurization method, and polishing grind slurry system can be the same as those in the previous side polishing.

The rectangular substrate for imprint lithography of the present invention is inscribed with a pattern caused by irregularities on the surface of the substrate. The method of marking the pattern caused by the unevenness may be any method that can remove a predetermined portion of the substrate, and examples include laser processing, wet etching, dry etching, photolithography, nanoimprint lithography, etc. . Although the following is an example of the method of marking the concave-convex pattern, the production method is not limited to the following method.

(Nano-level bump pattern)

A metal thin film is formed on the entire surface (surface) of one side of the rectangular substrate having front and back surfaces and four side surfaces facing up and down. As the film formation method, for example, a sputtering film formation method or a vapor deposition film formation method may be used. The metal thin film may be a single layer or a plurality of layers. As an example, a chromium thin film can be mentioned. Next, for example, a photoresist material for electron line drawing is coated on the metal thin film, and baking treatment is performed at a predetermined temperature and time to form a photoresist film.

Next, using an electronic drawing device or the like, after the predetermined pattern is drawn on the photoresist film, the photoresist film is developed. The metal film of the predetermined pattern is removed by etching. After etching, the remaining photoresist film can also be removed. Next, the pre-printed substrate is etched to engrave the concave-convex pattern on the substrate. The etching process here is, for example, in the case of forming a nano-level concave-convex pattern, and is preferably dry etching from the viewpoint of processing accuracy.

(Table structure for mold sealing)

A metal thin film is formed on the entire surface (surface) of one side of the rectangular substrate having front and back surfaces and four side surfaces facing up and down. The film forming method may be the same as the above method. In addition, a concave-convex shape such as a nano-level concave-convex pattern due to the above method may be imprinted on the surface of the substrate.

Next, for example, a photoresist material is coated on the metal thin film, and baking treatment is performed at a predetermined temperature and time to form a photoresist film.

On the photoresist film described above, for example, a photoresist pattern for mesa formation is formed by photolithography using an exposure device. Specifically, for example, The substrate is introduced into the exposure apparatus with a mesa patterned photomask, and exposure by ultraviolet rays is performed, and then development is performed. Next, the chromium thin film other than the part protected by the photoresist pattern lock for the mesa formation is removed by wet etching or the like. Then, the substrate is etched to form a mesa structure. The etching process here may be any method as long as it can etch the substrate, and it may be any of wet etching and dry etching.

In the same way, a structure such as a centimeter to micrometer level positioning mark can be formed on the substrate.

The rectangular substrate for imprint lithography of the present invention may have non-penetrating holes or grooves on the back. The processing method of non-penetrating holes or grooves is, for example, using a comprehensive processing machine or other numerically controlled working machine to rotate and move the whetstone on the processing surface of the substrate under grinding conditions that will not cause cracks, cracks, or severe peeling. The formation of non-through holes or grooves of a predetermined size and depth is performed by such grinding.

Specifically, using diamond grits, CBN grits, etc. fixed by electroplating or metal bonding, the spindle rotates at 100 to 30,000 rpm, especially 1,000 to 15,000 rpm, and the grinding speed is 1 to 10,000 mm/min. Especially it is ideal to grind at 10~1,000mm/min.

The grinding surfaces of the bottom and side surfaces of non-penetrating holes or grooves are ground as needed. By removing the processed modified layer on the ground surface to remove residual stress caused by grinding, the shape change of the substrate caused by the residual stress can be suppressed. In addition, if the bottom and side surfaces of non-penetrating holes or grooves are not polished, it is difficult to completely remove dirt by washing because The removal of clean dirt will cause the pattern to be contaminated, which is not ideal. By grinding the bottom and side surfaces of the non-through holes or grooves in this way, the strength of the bottom surface can be greatly increased.

The method of grinding the grinding surfaces of the bottom surface and side surfaces of the non-penetrating holes or grooves is, for example, the grinding processing portion of the rotary grinding tool is contacted with a predetermined pressure on the grinding surface to make it relatively move at a predetermined speed. Of it.

When grinding the side and bottom surfaces of the previously non-penetrating holes or grooves, the grinding process section of the rotary grinding tool can be brought into contact with the respective independent constant pressure on the side surfaces and bottom surfaces of the non-through holes or grooves that have been ground. In order to polish the ground surfaces of the side and bottom surfaces.

The rotary polishing tool is not limited as long as the polishing portion is a rotatable body that can be polished, but examples include a method in which a polishing tool is attached to a rotating shaft having a tool jaw portion and a Leutor.

As the material of the grinding tool, at least the grinding processing part is GC whetstone, WA whetstone, diamond whetstone, cerium whetstone, cerium pad, rubber whetstone, fluff polishing wheel, polyurethane, etc., and the processed object can be processed and removed. The type is not limited.

When the grinding surfaces of the bottom surface and side surfaces of the non-penetrating holes or grooves mentioned above are brought into contact with the grinding processing portion of the rotary grinding tool for grinding, it is preferable to perform the processing with the grinding whet slurry interposed.

At this time, examples of the abrasive grain system include silicon dioxide, cerium oxide, corundum, white corundum (WA), FO, zirconium oxide, SiC, diamond, titanium dioxide, and germanium oxide. The particle size is 10 nm to 10 μm. It is thought that these water slurry systems can be ideally used.

The bottom surface and side surfaces of the non-penetrating holes or grooves obtained by polishing as described above are preferably mirror surfaces with a surface roughness (Ra) of 2 nm or less, especially 1 nm or less from the viewpoint of transparency. In addition, the surface roughness Ra is a value based on JIS B0601.

The process of forming non-penetrating holes or grooves may be before or after the process of forming the side by grinding, or after the process of grinding the ground side, from the viewpoint of ease of processing and productivity See, the process of grinding non-penetrating holes or grooves is to perform the grinding of the non-penetrating holes or grooves that have been ground immediately before or after the side grinding process. It is ideal to perform the grinding of the ground side before or after the grinding process.

[Example]

The following shows examples to illustrate the present invention in detail, but the present invention is not limited by the following examples.

[Example 1]

The synthetic quartz crystal raw material forming the shape of a corner pillar is sliced to obtain a rectangular plate substrate with a 160.0 mm square shape and a 6.50 mm plate thickness.

Introduce the aforementioned rectangular substrate to the flywheel grinding device, and carry out grinding processing of the sides and chamfered parts caused by the grinding wheel with diamond grits to obtain an outline of 152.0mm square with a radius of curvature (R) of 2.5mm A rectangular substrate with a rectangular shape with curved corners and chamfers.

Next, a sanding process was performed to obtain a synthetic quartz glass substrate whose two surfaces facing each other were a ground glass surface (surface thickness: RMS=0.32 μm) as a rectangular substrate.

The synthetic quartz glass substrate described in the foregoing is introduced into the side mirroring device schematically shown in FIG. 8(A), and the vacuum suction holding portion of the substrate holding table 15 in the device abuts the side surface to the positioning pin 12 of the positioning jig 11, On one side, the side surface is provided parallel to the moving axis 51 of the rotary polishing pad 52, and the vacuum suction and holding portion is actuated to fix the synthetic quartz glass substrate to the substrate holding table. After that, the positioning jig is moved to a place where it does not interfere with the grinding, and is stored in the device.

Thereafter, the curved corners, chamfers, and sides of the synthetic quartz glass substrate described above were polished. The outline of the side mirror finishing device during polishing is shown in FIG. 8(B).

The above-mentioned polishing of curved corners and chamfers is performed while supplying abrasive slurry, while pressing the rotary polishing pad 54 with a certain pressure of 0.02 MPa, while making it follow the shape of curved corners and chamfers. Move on. Grinding is used, and the rotary polishing pad 54 with an air-piston pressurizing mechanism 55 is provided with a 5-axis multi-joint robot arm 56 at the tip of the arm. As the abrasive slurry, an aqueous solution of cerium oxide is used, and the polishing portion of the rotary polishing pad 54 uses a polyurethane-based polishing cloth.

The polishing of the side surface of the substrate mentioned above is to supply the abrasive slurry while pressing the rotary polishing pad 52 with a certain pressure of 0.04 MPa to the side surface in the vertical direction, and to move the side surface parallel to the longitudinal direction back and forth. To make it shake in the short side direction (width direction). When moving back and forth, when the center of the polishing pad reaches the long-side end area of the side surface, the polishing pad is moved at a faster speed than the long-side center area. As the abrasive slurry, an aqueous solution of cerium oxide is used, and the polishing portion of the rotary polishing pad 52 is a non-woven cloth.

The above-mentioned polishing of curved corners, chamfers, and sides is to sequentially rotate synthetic quartz glass substrates by a rotating mechanism with a precision positioning function caused by clutch teeth by 90° in order to polish. The order of polishing is in the order of the chamfered portion of the curved corner, the corner of the curved surface, the chamfered portion of the lateral surface, and the lateral surface.

After the curved corners, chamfers and side surfaces are all polished, the synthetic quartz glass substrate is taken out by the vacuum suction holding part. The outer shape of the substrate is 151.980mm square.

Next, the front and back surfaces of the aforementioned synthetic quartz glass substrate were rough polished with cerium oxide and precision polished with silica sol to obtain a smooth and low-defect two-faced surface of the opposing surface and back surface. Quartz glass substrate. The thickness of the substrate is 6.35mm.

A chromium thin film is formed on the entire surface of the synthetic quartz glass substrate by a sputtering film forming device. Next, a photoresist (ZEP720A: manufactured by Zeon, Japan) was applied on the chromium thin film with a spin coater, and baked at a predetermined temperature and time to form a photoresist film.

Next, using an electronic drawing machine, after drawing lines and spatial patterns on the photoresist film, the photoresist film was developed, the chromium film was removed by dry etching using chlorine gas, and dry etching using CHF ₃ gas was used to synthesize quartz. A concave-convex pattern was formed on the glass substrate to obtain a rectangular substrate for synthetic quartz imprint lithography as shown in FIG. 1 in which lines with a half pitch of 20 nm and spatial concave-convex patterns were imprinted on the surface.

The measurement results of the rectangular substrate for synthetic quartz imprint lithography described above are shown below.

(Flatness of side)

Measurement results on 4 sides

3.5μm, 3.5μm, 2.9μm, 3.5μm

(Angle between adjacent sides)

4 locations all within 90°±0.04°

(Surface roughness on the side)

Ra=0.15nm

The following equipment is used in each measurement

Side flatness: Zygo NewView7300

Angle between adjacent sides: dial indicator

Surface roughness on the side: interatomic force microscope

[Example 2]

The two surfaces facing each other on the front and back are precision ground, with mirror-finished sides, curved corners and chamfered by brushing, with a square shape of 153.0mm square and a plate thickness of 6.35mm The rectangular substrate of synthetic quartz glass is prepared as a raw material substrate.

Sputtering film forming device on the entire surface of the synthetic quartz glass substrate A chromium film is formed. Next, a positive type photoresist (AZP1350: manufactured by AZ Electronic Materials) was coated on the chromium thin film by spin coating, and a baking process was performed at a predetermined temperature and time to form a photoresist film.

A synthetic quartz glass substrate described above was introduced into an exposure apparatus provided with a photomask, and exposure by ultraviolet wavelength was performed. The photomask is a glass photomask substrate having a mesa pattern with a square shape of 26 mm×33 mm in the center.

Next, the aforementioned synthetic quartz glass substrate was taken out of the exposure apparatus and developed, and a photoresist pattern for mesa formation was formed. Then, the synthetic quartz glass substrate described above was etched with chromium by an aqueous solution of cerium ammonium nitrate, and the chromium thin film other than the portion protected by the photoresist pattern for the mesa formation was removed. Then, the previous synthetic quartz glass substrate was subjected to wet etching caused by an aqueous solution of hydrofluoric acid to remove the synthetic quartz except the portion protected by the photoresist pattern described above. Then, the photoresist film was removed with acetone to form a mesa structure with a chromium thin film on the surface and a film formation height of about 30 μm.

Next, with the surface facing upward, the aforementioned synthetic quartz glass substrate was attached to the SUS-made base plate with Shiftwax.

The synthetic quartz glass substrate connected to the base plate of the previous note is introduced into an integrated processing machine and fixed on a magnetic clamping device installed on a processing table of the integrated processing machine. Thereafter, the side surfaces and chamfered portions of the diamond whetstones were ground to form a rectangular substrate having a rectangular shape with a curved corner portion and a chamfered portion having an external shape of 152.0 mm square and R: 2.5 mm. After that, the entire pedestal plate to which the synthetic quartz glass substrate has been attached is taken out.

The synthetic quartz glass substrate attached to the base plate of the previous note is introduced into the side mirroring device shown in FIG. 8(A), and the magnetic clamping device of the substrate holding table 15 in the device makes the side of the substrate abut against the positioning treatment The positioning pin 12 of the tool 11 is arranged so that the side surface of the substrate is parallel to the moving axis 51 of the rotary polishing pad 52, and the magnetic clamping device is operated to fix the synthetic quartz glass substrate.

Thereafter, in the same manner as in Example 1, the curved corners, chamfers, and side surfaces of the aforementioned synthetic quartz glass substrate were polished.

After the curved corners, chamfers, and sides are all polished, the synthetic quartz glass substrate that has been attached to the base plate is taken out with a magnetic jaw device. Next, Shiftwax was melted by heating, and the synthetic quartz glass substrate was removed from the pedestal plate. After that, the substrate was washed to obtain a rectangular substrate for synthetic quartz imprint lithography having a mesa structure with a quadrangular shape of 26 mm×33 mm and a height of 30 μm inscribed on the surface as shown in FIG. 2.

The measurement results of the rectangular substrate for synthetic quartz imprint lithography described above are shown below. In each measurement, the same device as in Example 1 was used.

(Flatness of side)

Measurement results on 4 sides

1.9μm, 2.5μm, 1.9μm, 2.1μm

(Angle between adjacent sides)

4 locations all within 90°±0.04°

(Surface roughness on the side)

Ra=0.17nm

[Example 3]

The two surfaces facing each other on the front and back are precision ground, with mirror-finished sides, curved corners, and chamfers, 152.0mm square, 6.35mm square The rectangular substrate of synthetic quartz glass is prepared as a raw material substrate.

A chromium thin film is formed on the entire surface of the synthetic quartz glass substrate by a sputtering film forming device. Next, a photoresist (ZEP720A: manufactured by Zeon, Japan) was applied on the chromium thin film with a spin coater, and baked at a predetermined temperature and time to form a photoresist film.

Next, using an electronic drawing machine, after drawing lines and spatial patterns on the photoresist film, the photoresist film was developed, the chromium film was removed by dry etching using chlorine gas, and dry etching using CHF ₃ gas was used to synthesize quartz. A concave-convex pattern is formed on the glass substrate.

The rectangular substrate described above was introduced into a cutting device, and the cutting process by the cutting blade with diamond grits was carried out to obtain a rectangular substrate with a plate shape of 75.0 mm square.

Next, with the surface facing down, the aforementioned synthetic quartz glass substrate was attached to the SUS-made base plate with Shiftwax.

The synthetic quartz glass substrate connected to the base plate of the previous note is introduced into an integrated processing machine and fixed on a magnetic clamping device installed on a processing table of the integrated processing machine. After that, the grinding process of the side surface, chamfered part and non-penetrating hole caused by the whetstone with diamond whetstone is formed, and the outer shape is 70.0mm. Fang, a rectangular substrate with a curved corner and a chamfered portion of R: 1.0 mm, and a circular non-penetrating hole with a diameter of 50 mm and a depth of 4 mm. After that, the entire pedestal plate to which the synthetic quartz glass substrate has been attached is taken out.

Thereafter, in the same manner as in Example 1, the curved corners, chamfers, and side surfaces of the aforementioned synthetic quartz glass substrate were polished.

、高度30mm之羊毛絨毛拋光輪，在非貫通的孔之底面以3,500Pa、在側面以2,000Pa按壓，使基板保持台以10rpm進行旋轉，研磨60分鐘，將非貫通的孔之底面及側面之研削面進行鏡面加工。 After the curved corners, chamfers, and side surfaces are all polished, the synthetic quartz glass substrate that has been attached to the base plate is removed with a magnetic jaw device. Next, the synthetic quartz glass substrate was fixed to the substrate holding table, while supplying the cerium oxide-based abrasive slurry, while rotating at 500 rpm, the diameter was 50 mm.

, 30mm height wool fleece polishing wheel, press 3,500Pa on the bottom surface of the non-penetrating hole, press 2,000Pa on the side, rotate the substrate holding table at 10rpm, and grind for 60 minutes, the bottom surface and side surface of the non-penetrating hole Grinding surface for mirror processing.

Next, Shiftwax was melted by heating, and the synthetic quartz glass substrate was removed from the pedestal plate. After that, the substrate was washed to obtain a synthetic quartz press in which lines and space irregularities with a half pitch of 20 nm were engraved on the surface as shown in FIGS. 4(A) and (C), and circular non-through holes were formed on the back. Rectangular substrate for lithography.

The measurement results of the rectangular substrate for synthetic quartz imprint lithography described above are shown below. The same device as in Example 1 was used for each measurement

(Flatness of side)

Measurement results on 4 sides

1.7μm, 2.1μm, 2.3μm, 1.9μm

(Angle between adjacent sides)

4 locations all within 90°±0.04°

(Surface roughness on the side)

Ra=0.21nm

[Example 4]

The two surfaces facing each other on the front and back are precision ground, with mirror-finished sides, curved corners and chamfered by brushing, with a square shape of 153.0mm square and a plate thickness of 6.35mm The rectangular substrate of synthetic quartz glass is prepared as a raw material substrate.

A chromium thin film is formed on the entire surface of the synthetic quartz glass substrate by a sputtering film forming device. Next, a positive type photoresist (AZP1350: manufactured by AZ Electronic Materials) was coated on the chromium thin film by spin coating, and a baking process was performed at a predetermined temperature and time to form a photoresist film.

A synthetic quartz glass substrate described above was introduced into an exposure apparatus provided with a photomask, and exposure by ultraviolet wavelength was performed. The photomask is a glass photomask substrate having a mesa pattern with a square shape of 26 mm×33 mm in the center.

Next, the aforementioned synthetic quartz glass substrate was taken out of the exposure apparatus and developed, and a photoresist pattern for mesa formation was formed. Then, the synthetic quartz glass substrate described above was etched with chromium by an aqueous solution of cerium ammonium nitrate, and the chromium thin film other than the portion protected by the photoresist pattern for the mesa formation was removed. Then, apply hydrofluoric acid water to the synthetic quartz glass substrate The wet etching caused by the solution removes the synthetic quartz except the part protected by the photoresist pattern. Then, the photoresist film was removed with acetone to form a mesa structure with a chromium thin film on the surface and a film formation height of about 30 μm.

Next, with the surface facing down, the aforementioned synthetic quartz glass substrate was attached to the SUS-made base plate with Shiftwax.

The synthetic quartz glass substrate connected to the base plate of the previous note is introduced into an integrated processing machine and fixed on a magnetic clamping device installed on a processing table of the integrated processing machine. After that, the grinding process of the side surface, chamfered part and groove caused by the whetstone with diamond grits was carried out to form a curved corner part and chamfered part with an external shape of 152.0 mm square, R: 2.5 mm, and a depth of 3 mm , A rectangular substrate with a rectangular shape of a groove parallel to the end face and having a width of 30 mm and a length of 152 mm. After that, the entire pedestal plate to which the synthetic quartz glass substrate has been attached is taken out.

Thereafter, in the same manner as in Example 1, the curved corners, chamfers, and side surfaces of the aforementioned synthetic quartz glass substrate were polished.

、高度30mm之羊毛絨毛拋光輪，在溝底面以2,000Pa、在單方之側面以2,000Pa按壓，使基板保持台以50mm/min來回移動5次，在溝底面及另一方之側面以和上記相同的壓力按壓並使基板保持台以50mm/min來回移動5次而進行鏡面加工。 After the curved corners, chamfers, and sides are all polished, the synthetic quartz glass substrate that has been attached to the base plate is taken out with a magnetic jaw device. Next, the synthetic quartz glass substrate was fixed to the substrate holding table, while supplying the cerium oxide-based abrasive slurry, while rotating at 1,000 rpm with a diameter of 30 mm

, Wool and fluff polishing wheel with a height of 30mm, press 2,000Pa on the bottom of the groove and 2,000Pa on the side of one side, so that the substrate holding table moves back and forth 5 times at 50mm/min, the same as above The pressure is pressed and the substrate holding table is moved back and forth 5 times at 50 mm/min to perform mirror processing.

Next, Shiftwax was melted by heating, and the synthetic quartz glass substrate was removed from the pedestal plate. After that, the substrate was washed to obtain a mesa structure with a quadrilateral mesa with 26 mm × 33 mm and a height of 30 μm engraved on the surface as shown in FIGS. 5(B) and (D), and a synthetic quartz embossment with grooves on the back Rectangular substrate for lithography.

The measurement results of the rectangular substrate for synthetic quartz imprint lithography described above are shown below. The same device as in Example 1 was used for each measurement

(Flatness of side)

Measurement results on 4 sides

3.1μm, 3.1μm, 2.6μm, 2.5μm

(Angle between adjacent sides)

4 locations all within 90°±0.04°

(Surface roughness on the side)

Ra=0.19nm

Claims (13)

A method for manufacturing a rectangular substrate for imprinting lithography, characterized in that the side of the substrate is the side of the rectangular substrate for imprinting lithography that has been processed by grinding, and the surface is pressed and rotated with a certain pressure in the vertical direction The polishing pad moves the rotating polishing pad parallel to the previous rectangular substrate on the side of the previous note, and grinds the side of the previous rectangular substrate; when the previous note moves in parallel, the moving speed of the relative movement of the rotating polishing pad and the rectangular substrate follows The polishing position is changed according to the above-mentioned polishing position of the side surface of the rectangular substrate; compared to the moving speed when the center of the rotary polishing pad is located in the central region of the longitudinal direction of the side surface of the rectangular substrate, it is located at the end region of the longitudinal direction of the side surface The movement speed is relatively fast while grinding. The method for manufacturing a rectangular substrate for imprint lithography as recited in claim 1, wherein the moving speed of the relative movement of the rotary polishing pad and the rectangular substrate during the parallel movement in the foregoing is in accordance with the unevenness of the side surface of the rectangular substrate Instead, change and grind. The method for manufacturing a rectangular substrate for imprint lithography as recited in claim 2, wherein the moving speed on the convex portion of the side surface is fast, and the moving speed on the concave portion of the side surface is slow to perform polishing. The method for manufacturing a rectangular substrate for imprint lithography as recited in claim 1, wherein the rectangular substrate and the rotary polishing pad are relatively moved along the short side direction (width direction) of the side surface of the rectangular substrate for polishing . Manufacture of rectangular substrate for imprint lithography as described in claim 1 In the method, after grinding one side of the rectangular substrate described above, the substrate is rotated by 90° one by one to grind the remaining sides, thereby grinding all four sides of the rectangular substrate. The method for manufacturing a rectangular substrate for imprint lithography as recited in claim 1, wherein before and after the process of forming the side surface by grinding or the process of polishing the side surface processed by grinding, Including: The process of forming non-penetrating holes or grooves by grinding on the back of the rectangular substrate. The method for manufacturing a rectangular substrate for imprint lithography as described in claim 6 further includes the process of grinding the side and bottom surfaces of the non-through holes or grooves that have been ground. The method for manufacturing a rectangular substrate for imprint lithography as recited in claim 7, wherein the process of polishing the side and bottom surfaces of the previously non-penetrating holes or grooves is as follows: The side and bottom surfaces of the through holes or grooves are the processes of making the grinding parts of the rotary grinding tool come into contact with a certain independent pressure to grind the grinding surfaces of the side and bottom surfaces. A rectangular substrate for imprinting lithography, which is characterized by a rectangular substrate for imprinting lithography having a front surface and a back surface and four side surfaces, and the surface is engraved with a pattern caused by concavities and convexities. The degree system is 20 μm or less. The rectangular substrate for imprint lithography as recited in claim 9, wherein the angle between adjacent side surfaces of the rectangular substrate is within a range of 90±0.1°. The rectangular substrate for imprint lithography as recited in claim 9 or 10, wherein each side surface of the rectangular substrate is a mirror surface. The rectangular substrate for imprint lithography as recited in claim 11, wherein the surface roughness (Ra) of each side of the rectangular substrate is 0.01 to 2 nm. The rectangular substrate according to claim 9 or 10, wherein the rectangular substrate has a non-penetrating hole or groove on the back surface.

Images