US20080160129A1 - Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template - Google Patents

Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template Download PDF

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US20080160129A1
US20080160129A1 US11/744,698 US74469807A US2008160129A1 US 20080160129 A1 US20080160129 A1 US 20080160129A1 US 74469807 A US74469807 A US 74469807A US 2008160129 A1 US2008160129 A1 US 2008160129A1
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region
template
body
side
distance
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US11/744,698
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Douglas J. Resnick
Mario J. Meissl
Byung-Jin Choi
Sidlgata V. Sreenivasan
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Canon Nanotechnologies Inc
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Canon Nanotechnologies Inc
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Application filed by Canon Nanotechnologies Inc filed Critical Canon Nanotechnologies Inc
Priority to US11/744,698 priority patent/US20080160129A1/en
Assigned to MOLECULAR IMPRINTS, INC. reassignment MOLECULAR IMPRINTS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MEISSL, MARIO J., RESNICK, DOUGLAS J., DR., SREENIVASAN, SIDLGATA V., DR., CHOI, BYUNG-JIN, DR.
Publication of US20080160129A1 publication Critical patent/US20080160129A1/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like

Abstract

A nanoimprint lithography template including, inter alia, a body having first and second opposed sides with a first surface disposed on the first side, the second side having a recess disposed therein, the body having first and second regions with the second region surrounding the first region and the recess in superimposition with the first region, with a portion of the first surface in superimposition with the first region being spaced-apart from the second side a first distance and a portion of the first surface in superimposition with the second region being spaced-apart from the second side a second distance, with the second distance being greater than the first distance; and a mold disposed on the first side of the body in superimposition a portion of the first region.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • The present application claims priority to U.S. Provisional Application No. 60/799,496, filed on May 11, 2006, entitled “Imprint Template with a Hollowed Central Region,” which is incorporated herein by reference.
  • BACKGROUND INFORMATION
  • Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nanometers or smaller. One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. As the semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
  • An exemplary nano-fabrication technique is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as United States patent application publication 2004/0065976 filed as U.S. patent application Ser. No. 10/264,960, entitled “Method and a Mold to Arrange Features on a Substrate to Replicate Features having Minimal Dimensional Variability”; United States patent application publication 2004/0065252 filed as U.S. patent application Ser. No. 10/264,926, entitled “Method of Forming a Layer on a Substrate to Facilitate Fabrication of Metrology Standards”; and U.S. Pat. No. 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention.
  • The imprint lithography technique disclosed in each of the aforementioned United States patent application publications and United States patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be positioned upon a stage to obtain a desired position to facilitate patterning thereof To that end, a mold is employed spaced-apart from the substrate with a formable liquid present between the mold and the substrate. The liquid is solidified to form a patterned layer that has a pattern recorded therein that is conforming to a shape of the surface of the mold in contact with the liquid. The mold is then separated from the patterned layer such that the mold and the substrate are spaced-apart. The substrate and the patterned layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the patterned layer.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross-sectional view of a lithographic system having a patterning device spaced-apart from a substrate;
  • FIG. 2 is a cross-sectional view of the patterning device shown in FIG. 1;
  • FIG. 3 is a top down view of the patterning device shown in FIG. 2;
  • FIG. 4 is a top down view of the patterning device shown in FIG. 2, in a second embodiment;
  • FIG. 5 is a top down view of the patterning device shown in FIG. 2, in a third embodiment
  • FIG. 6 is a top down view of the patterning device shown in FIG. 2, in a fourth embodiment
  • FIG. 7 is a cross-sectional view of the patterning device and the template chuck, both shown in FIG. 1;
  • FIG. 8 is a bottom-up plan view of the template chuck shown in FIG. 7;
  • FIG. 9 is a top down view showing an array of droplets of imprinting material positioned upon a region of the substrate shown in FIG. 1;
  • FIG. 10 is a cross-sectional view of the substrate shown in FIG. 1, having a patterned layer thereon;
  • FIG. 11 is a top down view of the patterning device shown in FIG. 1, having an actuation system coupled thereto, in a first embodiment;
  • FIG. 12 is a top down view of the patterning device shown in FIG. 1, having an actuation system coupled thereto, in a second embodiment;
  • FIG. 13 is a cross-sectional view of the patterning device and actuation system, both shown in FIG. 12;
  • FIG. 14 a flow diagram showing a method of patterning a region of the substrate shown in FIG. 1, in a first embodiment;
  • FIG. 15 is a cross-sectional view of the patterning device shown in FIG. 1, with a shape of the patterning device being altered;
  • FIG. 16 is a cross-sectional view of the patterning device shown in FIG. 15, in contact with a portion of the droplets of imprinting material shown in FIG. 9;
  • FIGS. 17-20 are top down views showing the compression of the droplets shown in FIG. 9, employing the altered shape of the patterning device shown in FIG. 16;
  • FIG. 21 is a side view of first and second bodies spaced-apart, with the first body having an adhesive composition positioned thereon;
  • FIG. 22 is a side view of the first and second bodies shown in FIG. 21, coupled together forming the patterning device, shown in FIG. 2;
  • FIG. 23 is a top down view of the patterning device shown in FIG. 2, in a fifth embodiment; and
  • FIG. 24 is a top down view of the patterning device shown in FIG. 2, in a sixth embodiment.
  • DETAILED DESCRIPTION
  • Referring to FIG. 1, a system 10 to form a relief pattern on a substrate 12 is shown. Substrate 12 may be coupled to a substrate chuck 14. Substrate 12 and substrate chuck 14 may be supported upon a stage 16. Further, stage 16, substrate 12, and substrate chuck 14 may be positioned on a base (not shown). Stage 16 may provide motion about the x and y axes. Substrate chuck 12 may be any chuck including, but not limited to, vacuum, pin-type, groove-type, or electromagnetic, as described in U.S. Pat. No. 6,873,087 entitled “High-Precision Orientation Alignment and Gap Control Stages for Imprint Lithography Processes,” which is incorporated herein by reference.
  • Referring to FIGS. 1-3, spaced-apart from substrate 12 is a patterning device 18. Patterning device 18 comprises a template 20 having first and second sides 22 and 24. First side may have a first surface 25 positioned thereon and extending therefrom towards substrate 12 with a patterning surface 28 thereon. First side 22 of template 20 may be substantially planar. Second side 24 of template 20 may have a second surface 30 and a recess 32 disposed therein. Recess 32 may comprise a nadir surface 34 and a boundary surface 36, with boundary surface 36 extending transversely between nadir surface 34 and second surface 30. Recess 32 may have a circular shape associated therewith, however, recess may have any geometric shape associated therewith. More specifically, recess 32 may have a square shape, as shown in FIG. 4; a rectangular shape, as shown in FIG. 5; or an elliptical shape as shown in FIG. 6.
  • Template 20 may further comprises a first region 38 and a second region 40, with second region 40 surrounding first region 38 and second region 40 having a perimeter 41. First region 38 may be in superimposition with recess 32. To that end, template 20 may have a varying thickness with respect to first and second regions 38 and 40. More specifically, a portion of first surface 25 in superimposition with first region 38 may be spaced-apart from second side 24 a first distance d1 defining a first thickness t1 and a portion of first surface 25 in superimposition with second region 40 may be spaced-apart from second side 24 a second distance d2, defining a second thickness t2. Distance d2 may be greater than distance d1 and thickness t2 may be greater than thickness t1. In an example, distance d2 may have a magnitude of approximately 0.25 inches and distance d1 may have a magnitude of approximately 700 microns. In a further example, distance d1 may have a magnitude in a range of 1 micron to 0.25 inches.
  • Mesa 26 may be referred to as a mold 26. Mesa 26 may also be referred to as a nanoimprint mold 26. In a further embodiment, template 20 may be substantially absent of mold 26. Template 20 and/or mold 26 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire. As shown, patterning surface 28 comprises features defined by a plurality of spaced-apart recesses 42 and protrusions 44. However, in a further embodiment, patterning surface 28 may be substantially smooth and/or planar. Patterning surface 28 may define an original pattern that forms the basis of a pattern to be formed on substrate 12. Further, mold 26 may be in superimposition with a portion of first region 38, however, in a further embodiment, mold 26 may be in superimposition with an entirety of first region 38.
  • Referring to FIGS. 1, 7, and 8, template 20 may be coupled to a template chuck 46, template chuck 46 being any chuck including, but not limited to, vacuum, pin-type, groove-type, or electromagnetic, as described in U.S. Pat. No. 6,873,087 entitled “High-Precision Orientation Alignment and Gap Control Stages for Imprint Lithography Processes”. Template chuck 46 includes first 11 and second 13 opposed sides. A side, or edge, surface 15 extends between first side 11 and second side 13. First side 11 includes a first recess 17 and a second recess 19, spaced-apart from first recess 17, defining first 21 and second 23 spaced-apart support regions. First support region 21 cinctures second support region 23 and first 17 and second 19 recesses. Second support region 23 cinctures second recess 19. In a further embodiment, first and second support regions 21 and 23 may be formed from a compliant material. First support region 21 may have a square shape and second support region 23 may have a circular shape; however, in a further embodiment, first and second support regions 21 and 23 may comprise any geometric shape desired. A portion 27 of template chuck 46 in superimposition with second recess 19 may be transparent to radiation having a predetermined wavelength. To that end, portion 27 may be made from a thin layer of transparent material, such as glass. However, the material from which portion 27 is made may depend upon the wavelength of radiation, described further below. Portion 27 extends between second side 13 and terminates proximate to second recess 19 and should define an area at least as large as an area of mold 26 so that mold 26 is in superimposition therewith.
  • Formed in template chuck 46 are throughways 27 and 29, however, template chuck 46 may comprise any number of throughways. Throughway 27 places first recess 17 in fluid communication with side surface 15, however, in a further embodiment, it should be understood that throughway 27 may place first recess 17 in fluid communication with any surface of template chuck 46. Throughway 29 places second recess 19 in fluid communication with second side 13, however, in a further embodiment, it should be understood that throughway 29 may place second recess 19 in fluid communication with any surface of template chuck 46. Furthermore, what is desired is that throughways 27 and 29 facilitate placing first and second recess 17 and 19, respectively, in fluid communication with a pressure control system, such as a pump system 31.
  • Pump system 31 may include one or more pumps to control the pressure proximate to first and second recess 17 and 19. To that end, when template 20 is coupled to template chuck 46, template 20 rests against first 21 and second 23 support regions, covering first 17 and second 19 recesses. First region 38 of template 20 may be in superimposition with second recess 19, defining a first chamber 33 and second region 40 template 20 may be in superimposition with first recess 17, defining a second chamber 35. Pump system 31 operates to control a pressure in first and second chambers 33 and 35. Further, template chuck 46 may be coupled to an imprint head 48 to facilitate movement of patterning device 18.
  • Referring to FIGS. 1 and 9, system 10 further comprises a fluid dispense system 50. Fluid dispense system 50 may be in fluid communication with substrate 12 so as to deposit polymeric material 52 thereon. System 10 may comprise any number of fluid dispensers, and fluid dispense system 50 may comprise a plurality of dispensing units therein. Polymeric material 52 may be positioned upon substrate 12 using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like. Typically, polymeric material 52 is disposed upon substrate 12 before the desired volume is defined between mold 26 and substrate 12. However, polymeric material 52 may fill the volume after the desired volume has been obtained. As shown in FIG. 9, polymeric material 52 may be deposited upon substrate 12 as a plurality of spaced-apart droplets 54, defining a matrix array 56. In an example, each droplet of droplets 54 may have a unit volume of approximately 1-10 pico-liters. Droplets 54 of matrix array 56 may be arranged in five columns c1-c5 and five rows r1-r5. However, droplets 54 may be arranged in any two-dimensional arrangement on substrate 12.
  • Referring to FIGS. 1 and 10, system 10 further comprises a source 58 of energy 60 coupled to direct energy 60 along a path 62. Imprint head 48 and stage 16 are configured to arrange mold 26 and substrate 12, respectively, to be in superimposition and disposed in path 62. Either imprint head 48, stage 16, or both vary a distance between mold 26 and substrate 12 to define a desired volume therebetween that is filled by polymeric material 52. After the desired volume is filled with polymeric material 52, source 58 produces energy 60, e.g., broadband ultraviolet radiation that causes polymeric material 52 to solidify and/or cross-link conforming to the shape of a surface 64 of substrate 12 and patterning surface 28, defining a patterned layer 66 on substrate 12. Patterned layer 66 may comprise a residual layer 68 and a plurality of features shown as protrusions 70 and recessions 72. System 10 may be regulated by a processor 74 that is in data communication with stage 16, pump system 31, imprint head 48, fluid dispense system 50, and source 58, operating on a computer readable program stored in memory 76. In a further embodiment, patterned layer 66 may be formed employing any known technique, e.g., photolithography (various wavelengths including G line, I line, 248 nm, 193 nm, 157 nm, and 13.2-13.4 nm), contact lithography, e-beam lithography, x-ray lithography, ion-beam lithography and atomic beam lithography.
  • Referring to FIGS. 2 and 11, system 10 further comprises an actuator system 78 surrounding patterning device 18. Actuation system 78 includes a plurality of actuators 80 coupled to patterned device 18. Each of actuators 80 are arranged to facilitate generation of a force upon second region 40 of patterning device 18. Actuators 80 may be any force or displacement actuator known in the art including, inter alia, pneumatic, piezoelectric, magnetostrictive, and voice coils.
  • As shown, actuation system 78 comprises sixteen actuators 80 coupled to a perimeter 41 of patterning device 18, with each side of patterning device 18 having four actuators 80 coupled thereto. However, patterning device 18 may have any number of actuators 80 coupled thereto and may have differing number of actuators 80 coupled to each side of patterning device 18. Patterning device 18 may have any configuration and number of actuators 80 positioned thereon. In a further embodiment, actuators 80 may be coupled to boundary surface 36 of recess 32, as shown in FIGS. 12 and 13. Actuation system 78 may be in data communication with processor 74, operating on a computer readable program stored in memory 76, to control an operation thereof, and more specifically, generate control signals that are transmitted to actuators 80 of actuation system 78.
  • Referring to FIGS. 1, 9, and 10, as mentioned above, a distance between mold 26 and substrate 12 is varied such that a desired volume is defined therebetween that is filled by polymeric material 52. Furthermore, after solidification, polymeric material 52 conforms to the shape of surface 64 of substrate 12 and patterning surface 28, defining patterned layer 66 on substrate 12. To that end, in a volume 82 defined between droplets 54 of matrix array 56, there are gases present, and droplets 54 in matrix array 56 are spread over substrate 12 so as to avoid, if not prevent, trapping of gases and/or gas pockets between substrate 12 and mold 26 and within patterned layer 66. The gases and/or gas pockets may be such gases including, but not limited to air, nitrogen, carbon dioxide, and helium. Gas and/or gas pockets between substrate 12 and mold 26 and within patterned layer 66 may result in, inter alia, pattern distortion of features formed in patterned layer 66, low fidelity of features formed in patterned layer 66, and a non-uniform thickness of residual layer 48 across patterned layer 68, all of which are undesirable. To that end, a method and a system of minimizing, if not preventing, trapping of gas and/or gas pockets between substrate 12 and mold 26 and within patterned layer 66 are described below.
  • Referring to FIGS. 1 and 14, in a first embodiment, a method of expelling gas between substrate 12 and mold 26 is shown. More specifically, at step 100, as mentioned above, polymeric material 52 may be positioned on substrate 12 by drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like. In a further embodiment, polymeric material 52 may be positioned on mold 26.
  • Referring to FIGS. 2, 11, 14, and 15, at step 102, a shape of patterning device 18 may be altered such that a distance h1 defined between mold 26 and substrate 12 at a center sub-portion of mold 26 is less than a distance defined between mold 26 and substrate 12 at remaining portions of mold 26. In an example, distance h1 is less than a distance h2, distance h2 being defined at an edge of mold 26. In a further embodiment, the distance h1 may be defined at any desired location of mold 26. The shape of patterning device 18 may be altered by applying a plurality of forces by actuators 80 upon patterning device 18. More specifically, as a result of first region 38 of template 20 having a first thickness ti, upon application of the force by actuators 80, a shape of first region 38 of template 20 may be altered such that first region 38 of template 20 bows toward substrate 12 and away from template chuck 46. Furthermore, each of actuators 80 may exert a differing force upon patterning device 18. In an example, the bowing of first region 38 of template 20 may be on the order of 0-200 nm over 41 nm diameter employing actuators 80.
  • Referring to FIGS. 2, 7, and 8, in a further embodiment, the shape of patterning device 18 may be altered by controlling a pressure within first and second chambers 33 and 35. More specifically, as mentioned above, pump system 31 operates to control a pressure within first and second chambers 33 and 35. To that end, in a first example, pump system 31 may increase a magnitude of a pressure created within first chamber 33 via throughway 29 such that first region 38 of template 20 may bow away from template chuck 46 and towards substrate 12. In a second example, pump system 31 may create a vacuum within second chamber 35 via throughway 27 such that second region 40 of template 20 may bow away from substrate 12 and bow towards template chuck 46. As a result of bowing second region 40 of template 20 away from substrate 12, first region 38 of template 20 may bow towards substrate 12 and away from template chuck 36, as described in U.S. patent application Ser. No. 11/565,393 entitled “Method for Expelling Gas Positioned Between a Substrate and a Mold” which is incorporated herein by reference. In an example, the bowing of first region 38 of template 20 may be on the order of 0-35 μm nm over 41 nm diameter employing pump system 31. In still a further embodiment, any combination of the methods mentioned above for altering the shape of patterning device 38 may be employed.
  • Referring to FIGS. 14, 16, and 17, at step 104, as described above with respect to FIG. 1, either imprint head 48, shown in FIG. 1, stage 14, or both, may vary distance h1, shown in FIG. 15, such that a sub-portion of mold 26 contacts a sub-portion of droplets 54. As shown, a center sub-portion of mold 26 contacts a sub-portion of droplets 54 prior to the remaining portions of mold 26 contacting the remaining droplets of droplets 54. However, in a further embodiment, any portion of mold 26 may contact droplets 54 prior to remaining portions of mold 26. To that end, this causes droplets 54 to spread and to produce a contiguous liquid sheet 84 of polymeric material 52. Edge 86 of liquid sheet 84 defines a liquid-gas interface 88 that functions to push gases in volume 82 toward edges 90 a, 90 b, 90 c, and 90 d of substrate 12. Volume 82 between droplets 54 in columns c1-c5 define gas passages through which gas may be pushed to edges 90 a, 90 b, 90 c, and 90 d. As a result, liquid-gas interface 88 in conjunction with the gas passages reduces, if not prevents, trapping of gases in liquid sheet 84.
  • Referring to FIGS. 14 and 16, at step 106, the shape of patterning device 18 may be altered such that the desired volume defined between mold 26 and substrate 12 may be filled by polymeric material 52, as described above with respect to FIG. 1. More specifically, the shape of patterning device 18 may be altered such that polymeric material 52 associated with subsequent subsets of droplets 54, shown in FIG. 18, spread to become included in contiguous fluid sheet 84. The shape of patterning device 18 continues to be altered such that mold 26 subsequently comes into contact with the remaining droplets 54 so that polymeric material 52 associated therewith spreads to become included in contiguous sheet 84, as shown in FIGS. 19 and 20. As can be seen, interface 88 has moved towards edges 90 a, 90 b, 90 c, and 90 d so that there is an unimpeded path for the gases in the remaining volume 82, shown in FIG. 17, to travel thereto. This allows gases in volume 82, shown in FIG. 17, to egress from between mold 26 and substrate 12 vis-à-vis edges 90 a, 90 b, 90 c and 90 d. In this manner, the trapping of gas and/or gas pockets between substrate 12 and mold 26 and within patterned layer 68, shown in FIG. 10, is minimized, if not prevented. In a further embodiment, the shape of patterning device 18 may be altered concurrently with decreasing the distance h1, as mentioned above with respect to FIG. 15. Furthermore, it may be desired to balance a speed at which polymeric material 52 fills the desired volume between mold 26 and substrate 12. More specifically, if interface 88 propagates towards edges 90 a, 90 b, 90 c, and 90 d too fast, pockets of gas may be created between mold 26 and substrate 12, which is undesirable. To that end, in an example, the shape of patterning device 18 may be altered such that polymeric material 52 fills the desired volume between mold 26 and substrate 12 at a speed of 800 mm2 mm in a few seconds.
  • Referring to FIGS. 11 and 14, at step 108, actuation system 78 may selectively deform patterning device 18. This facilitates correcting various parameters of the pattern shape, i.e., magnification characteristics, skew/orthogonality characteristics, and trapezoidal characteristics. Magnification characteristics may be magnification error, such as where the overall pattern changes from a square shape to a rectangular shape. Skew/orthogonality characteristics may be skew/orthogonality error where adjacent edges form an oblique or obtuse angle with respect to one another instead of an orthogonal angle. Trapezoidal characteristics may be trapezoidal error where as in where a square/rectangular assumes the shape of a trapezium, with trapezium including a trapezoid. To control the pattern shape, patterning device 18 may be selectively deformed by actuators 80 to minimize, if not cancel, the distortions present, thereby reducing overlay errors.
  • Referring to FIGS. 1 and 14, at step 110, as mentioned above with respect to FIG. 1, polymeric material 52 may be then be solidified and/or cross-linked, defining patterned layer 68, shown in FIG. 10. Subsequently, at step 112, mold 26 may be separated from patterned layer 68, shown in FIG. 10. To facilitate separation, a shape of patterning device 18 may altered analogous to that mentioned above with respect to FIG. 15 and step 102.
  • Referring to FIGS. 21 and 22, in an example, patterning device 18 may be formed by coupling a first body 96 and second bodies 98 a and 98 b. More specifically, second bodies 98 a and 98 b may be coupled to a periphery of first body 96 such that second bodies 98 a and 98 b define second region 40 of template 20, shown in FIG. 2. Second bodies 98 a and 98 b may be coupled to first body 96 employing an adhesive material 99, with adhesive material 99 being any coupling composition commonly employed in the art, with adhesive material 99 that is stiff enough to transmit sheer loads between first body 96 and second bodies 98 a and 98 b.
  • Referring to FIGS. 1, 23, and 24, a further embodiment of patterning device 18 is shown as patterning devices 118 and 218, respectively. Patterning devices 118 and 120 further comprise portions 94 a, 94 b, 94 c, and 94 d positioned within second region 40 of template 20, shown in FIG. 2, with portions 94 a, 94 b, 94 c, and 94 d having a thickness substantially the same as thickness t1 of first region 38, shown in FIG. 2. Patterning device 118 may be employed were the shape of the same to be altered by application of a plurality of forces by actuators 80. Patterning device 218 may be employed were the shape of the same to be altered by a combination of application of a plurality of forces by actuators 80 and creating a pressure within first chamber 33, shown in FIG. 8. Furthermore, were either patterning device 118 or 120 employed in the above-mentioned process, a vacuum between template chuck 46 and patterning device 118 or 120 may be initially a partial vacuum to facilitate altering a shape of patterning device 118 or 120 and upon completion of altering the shape of patterning device 118 or 120, a full vacuum between template chuck 46 may be employed.
  • The embodiments of the present invention described above are exemplary. Many changes and modifications may be made to the disclosure recited above, while remaining within the scope of the invention. Therefore, the scope of the invention should not be limited by the above description, but instead should be determined with reference to the appended claims along with their full scope of equivalents.

Claims (20)

1. A nanoimprint lithography template comprising:
a body having first and second opposed sides with a first surface disposed on said first side, said second side having a recess disposed therein, said body having first and second regions with said second region surrounding said first region and said recess in superimposition with said first region, with a portion of said first surface in superimposition with said first region being spaced-apart from said second side a first distance and a portion of said first surface in superimposition with said second region being spaced-apart from said second side a second distance, with said second distance being greater than said first distance; and
a mold disposed on said first side of said body in superimposition with a portion of said first region.
2. The template as recited in claim 1 wherein said recess has a geometric shape selected from a group of geometric shapes consisting of square, rectangular, circular, and elliptical.
3. The template as recited in claim 1 wherein said recess comprises a nadir surface, with said portion of said first surface in superimposition with said first region being spaced-apart from said nadir surface a first distance.
4. The template as recited in claim 1 wherein said second distance has a magnitude of approximately 0.25 inches.
5. The template as recited in claim 1 wherein said first distance has a magnitude of approximately 700 microns.
6. The template as recited in claim 1 wherein said first distance has a magnitude in a range of 1 micron to 0.25 inches.
7. The template as recited in claim 1 wherein said mold comprises a plurality of protrusions and recessions.
8. A nanoimprint lithography template comprising:
a body having first and second opposed sides with a first surface disposed on said first side being substantially planar, said body having first and second regions with said second region surrounding said first region, with a portion of said body in superimposition with said first region having a first thickness and a portion of said body in superimposition with said second region having a second thickness, with said second thickness being greater than said first thickness; and
a mold disposed on said first side in superimposition with a portion of said first region.
9. The template as recited in claim 8 wherein said second side of said body has a recess disposed therein, with said recess being in superimposition with said first region of said body.
10. The template as recited in claim 9 wherein said recess has a geometric shape selected from a group of geometric shapes consisting of square, rectangular, circular, and elliptical.
11. The template as recited in claim 8 wherein said second thickness has a magnitude of approximately 0.25 inches.
12. The template as recited in claim 8 wherein said first distance has a magnitude of approximately 700 microns.
13. The template as recited in claim 8 wherein said first distance has a magnitude in a range of 1 micron to 0.25 inches.
14. The template as recited in claim 8 wherein said mold comprises a plurality of protrusions and recessions.
15. A nanoimprint lithography system comprising:
a body having first and second opposed sides with a first surface disposed on said first side, said second side having a recess disposed therein, said body having first and second regions with said second region surrounding said first region and said recess in superimposition with said first region, with a portion of said first surface in superimposition with said first region being spaced-apart from said second side a first distance and a portion of said first surface in superimposition with said second region being spaced-apart from said second side a second distance, with said second distance being greater than said first distance, said body further having a mold disposed on said first side in superimposition with a portion of said first region; and
an actuator coupled to said body to apply a force to said body to bow said first region of said body away from said second side of said body.
16. The system as recited in claim 15 further including a plurality of actuators.
17. The system as recited in claim 15 wherein said force of said actuator may vary dimensions of said body.
18. The system as recited in claim 15 wherein said recess has a geometric shape selected from a group of geometric shapes consisting of square, rectangular, circular, and elliptical.
19. The system as recited in claim 15 wherein said actuator is coupled to a periphery of said body.
20. The system as recited in claim 15 wherein said recess comprises a nadir surface spaced-apart from said first side and said body comprises a boundary surface defined between said nadir surface and said second side, with said actuator being coupled to said boundary surface.
US11/744,698 2006-05-11 2007-05-04 Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template Abandoned US20080160129A1 (en)

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Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090140458A1 (en) * 2007-11-21 2009-06-04 Molecular Imprints, Inc. Porous template and imprinting stack for nano-imprint lithography
US20100015270A1 (en) * 2008-07-15 2010-01-21 Molecular Imprints, Inc. Inner cavity system for nano-imprint lithography
US20100072671A1 (en) * 2008-09-25 2010-03-25 Molecular Imprints, Inc. Nano-imprint lithography template fabrication and treatment
US20100084376A1 (en) * 2008-10-02 2010-04-08 Molecular Imprints, Inc. Nano-imprint lithography templates
US20100104852A1 (en) * 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of High-Throughput Nano-Imprint Lithography Templates
US20100102469A1 (en) * 2008-10-24 2010-04-29 Molecular Imprints, Inc. Strain and Kinetics Control During Separation Phase of Imprint Process
EP2221163A1 (en) * 2009-02-20 2010-08-25 API Group PLC Machine head for production of a surface relief
WO2011043820A1 (en) 2009-10-08 2011-04-14 Molecular Imprints, Inc. Large area linear array nanoimprinting
US20110171340A1 (en) * 2002-07-08 2011-07-14 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US20110183027A1 (en) * 2010-01-26 2011-07-28 Molecular Imprints, Inc. Micro-Conformal Templates for Nanoimprint Lithography
US20110189329A1 (en) * 2010-01-29 2011-08-04 Molecular Imprints, Inc. Ultra-Compliant Nanoimprint Lithography Template
US20110272838A1 (en) * 2010-05-06 2011-11-10 Matt Malloy Apparatus, System, and Method for Nanoimprint Template with a Backside Recess Having Tapered Sidewalls
US20120061875A1 (en) * 2010-09-13 2012-03-15 Takuya Kono Template chuck, imprint apparatus, and pattern forming method
WO2012083578A1 (en) * 2010-12-22 2012-06-28 青岛理工大学 Device and method for nano-imprinting full wafer
EP2587312A1 (en) * 2011-10-24 2013-05-01 Shin-Etsu Chemical Co., Ltd. Electronic grade glass substrate and making method
US20130196122A1 (en) * 2012-01-31 2013-08-01 Seagate Technology, Llc Method of surface tension control to reduce trapped gas bubbles
US20130221571A1 (en) * 2012-02-29 2013-08-29 Kabushiki Kaisha Toshiba Pattern forming device and semiconductor device manufacturing method
CN104094380A (en) * 2012-02-07 2014-10-08 佳能株式会社 Imprint apparatus and method of manufacturing article
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US8889332B2 (en) 2004-10-18 2014-11-18 Canon Nanotechnologies, Inc. Low-K dielectric functional imprinting materials
US20150183151A1 (en) * 2013-12-31 2015-07-02 Canon Nanotechnologies, Inc. Asymmetric Template Shape Modulation for Partial Field Imprinting
JP2015198215A (en) * 2014-04-03 2015-11-09 大日本印刷株式会社 Substrate for imprint mold and manufacturing method therefor, and imprint mold
US9323143B2 (en) 2008-02-05 2016-04-26 Canon Nanotechnologies, Inc. Controlling template surface composition in nano-imprint lithography
JP2017028322A (en) * 2016-10-24 2017-02-02 大日本印刷株式会社 Nanoimprinting template
US9793120B2 (en) 2015-06-16 2017-10-17 Toshiba Memory Corporation Device substrate, method of manufacturing device substrate, and method of manufacturing semiconductor device
TWI623411B (en) * 2015-02-13 2018-05-11 Canon Kk Mold, imprint apparatus, and method of manufacturing article

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US20090212012A1 (en) * 2008-02-27 2009-08-27 Molecular Imprints, Inc. Critical dimension control during template formation
US8043085B2 (en) 2008-08-19 2011-10-25 Asml Netherlands B.V. Imprint lithography
NL2004266A (en) 2009-04-27 2010-10-28 Asml Netherlands Bv An actuator.
JP5534311B2 (en) * 2010-01-22 2014-06-25 Hoya株式会社 Mask substrate and manufacturing method thereof blank, the imprint mold for a mask blank and a method of manufacturing the same, and the imprint mold and a manufacturing method thereof
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JP5664471B2 (en) 2010-06-28 2015-02-04 信越化学工業株式会社 The method of manufacturing a semiconductor for the synthetic quartz glass substrate
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WO2012133840A1 (en) * 2011-03-30 2012-10-04 日本電気株式会社 Imprinting device imprinting method, electronic circuit substrate, and electronic device
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WO2013044181A1 (en) * 2011-09-23 2013-03-28 1366 Technologies Inc. Methods and apparati for handling, heating and cooling a substrate upon which a pattern is made by a tool in heat flowable material coating, including substrate transport, tool laydown, tool tensioning, and tool retraction
KR20130085759A (en) 2012-01-20 2013-07-30 삼성전자주식회사 Stamp and method of fabricating stamp and imprinting method using the same
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KR20130123760A (en) 2012-05-03 2013-11-13 삼성전자주식회사 Active template system and the nano-imprint method using the same
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Citations (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577593A (en) * 1968-10-29 1971-05-04 Bird & Son Apparatus for heat and vacuum-pressure machine molding
US3677178A (en) * 1965-10-11 1972-07-18 Scott Paper Co Dry planographic plates and methods, production and use
US4722878A (en) * 1984-11-09 1988-02-02 Mitsubishi Denki Kabushiki Kaisha Photomask material
US4959252A (en) * 1986-09-29 1990-09-25 Rhone-Poulenc Chimie Highly oriented thermotropic optical disc member
US5016691A (en) * 1990-06-19 1991-05-21 Lucien Bernier Apparatus for centering template guide on router
US5206983A (en) * 1991-06-24 1993-05-04 Wisconsin Alumni Research Foundation Method of manufacturing micromechanical devices
US5348616A (en) * 1993-05-03 1994-09-20 Motorola, Inc. Method for patterning a mold
US5464711A (en) * 1994-08-01 1995-11-07 Motorola Inc. Process for fabricating an X-ray absorbing mask
US5477058A (en) * 1994-11-09 1995-12-19 Kabushiki Kaisha Toshiba Attenuated phase-shifting mask with opaque reticle alignment marks
US5509041A (en) * 1994-06-30 1996-04-16 Motorola, Inc. X-ray lithography method for irradiating an object to form a pattern thereon
US5621594A (en) * 1995-02-17 1997-04-15 Aiwa Research And Development, Inc. Electroplated thin film conductor coil assembly
US5684660A (en) * 1995-02-17 1997-11-04 Aiwa Research And Development, Inc. Thin film coil head assembly with protective planarizing cocoon structure
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US5804017A (en) * 1995-07-27 1998-09-08 Imation Corp. Method and apparatus for making an optical information record
US5817376A (en) * 1996-03-26 1998-10-06 Minnesota Mining And Manufacturing Company Free-radically polymerizable compositions capable of being coated by electrostatic assistance
US5885514A (en) * 1996-12-09 1999-03-23 Dana Corporation Ambient UVL-curable elastomer mold apparatus
US5937758A (en) * 1997-11-26 1999-08-17 Motorola, Inc. Micro-contact printing stamp
US6117708A (en) * 1998-02-05 2000-09-12 Micron Technology, Inc. Use of residual organic compounds to facilitate gate break on a carrier substrate for a semiconductor device
US6165911A (en) * 1999-12-29 2000-12-26 Calveley; Peter Braden Method of patterning a metal layer
US6190929B1 (en) * 1999-07-23 2001-02-20 Micron Technology, Inc. Methods of forming semiconductor devices and methods of forming field emission displays
US6261469B1 (en) * 1998-10-13 2001-07-17 Honeywell International Inc. Three dimensionally periodic structural assemblies on nanometer and longer scales
US6305925B1 (en) * 1997-08-01 2001-10-23 Sacmi- Cooperative Meccanici Imola - Soc. Coop. A.R.L. Apparatus for pressing ceramic powders
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6368752B1 (en) * 1996-10-29 2002-04-09 Motorola, Inc. Low stress hard mask formation method during refractory radiation mask fabrication
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US6399406B2 (en) * 2000-06-19 2002-06-04 International Business Machines Corporation Encapsulated MEMS band-pass filter for integrated circuits and method of fabrication thereof
US20020122993A1 (en) * 2001-03-04 2002-09-05 Nikon Corporation Stencil reticles for charged-particle-beam microlithography, and fabrication methods for making same
US6446933B1 (en) * 1998-09-03 2002-09-10 Micron Technology, Inc. Film on a surface of a mold used during semiconductor device fabrication
US20020135099A1 (en) * 2001-01-19 2002-09-26 Robinson Timothy R. Mold with metal oxide surface compatible with ionic release agents
US6465365B1 (en) * 2000-04-07 2002-10-15 Koninklijke Philips Electronics N.V. Method of improving adhesion of cap oxide to nanoporous silica for integrated circuit fabrication
US20020159918A1 (en) * 2000-06-25 2002-10-31 Fan-Gang Tseng Micro-fabricated stamp array for depositing biologic diagnostic testing samples on bio-bindable surface
US20020175298A1 (en) * 2001-05-23 2002-11-28 Akemi Moniwa Method of manufacturing semiconductor device
US20030026896A1 (en) * 2000-08-03 2003-02-06 Ichiro Shinkoda Method and apparatus for fabrication of color filters
US6517977B2 (en) * 2001-03-28 2003-02-11 Motorola, Inc. Lithographic template and method of formation and use
US6605849B1 (en) * 2002-02-14 2003-08-12 Symmetricom, Inc. MEMS analog frequency divider
US20030180631A1 (en) * 2002-02-22 2003-09-25 Hoya Corporation Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same
US20030224262A1 (en) * 2002-03-01 2003-12-04 Asml Netherlands, B.V. Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods
US6664026B2 (en) * 2001-03-22 2003-12-16 International Business Machines Corporation Method of manufacturing high aspect ratio photolithographic features
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
US6716754B2 (en) * 2002-03-12 2004-04-06 Micron Technology, Inc. Methods of forming patterns and molds for semiconductor constructions
US6743368B2 (en) * 2002-01-31 2004-06-01 Hewlett-Packard Development Company, L.P. Nano-size imprinting stamp using spacer technique
US6753131B1 (en) * 1996-07-22 2004-06-22 President And Fellows Of Harvard College Transparent elastomeric, contact-mode photolithography mask, sensor, and wavefront engineering element
US6780001B2 (en) * 1999-07-30 2004-08-24 Formfactor, Inc. Forming tool for forming a contoured microelectronic spring mold
US20040163563A1 (en) * 2000-07-16 2004-08-26 The Board Of Regents, The University Of Texas System Imprint lithography template having a mold to compensate for material changes of an underlying liquid
US20040197712A1 (en) * 2002-12-02 2004-10-07 Jacobson Joseph M. System for contact printing
US20040202865A1 (en) * 2003-04-08 2004-10-14 Andrew Homola Release coating for stamper
US6808646B1 (en) * 2003-04-29 2004-10-26 Hewlett-Packard Development Company, L.P. Method of replicating a high resolution three-dimensional imprint pattern on a compliant media of arbitrary size
US20040219246A1 (en) * 2003-04-29 2004-11-04 Jeans Albert H. Apparatus for embossing a flexible substrate with a pattern carried by an optically transparent compliant media
US20050006343A1 (en) * 2003-07-09 2005-01-13 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US6852454B2 (en) * 2002-06-18 2005-02-08 Freescale Semiconductor, Inc. Multi-tiered lithographic template and method of formation and use
US20050051698A1 (en) * 2002-07-08 2005-03-10 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US6890688B2 (en) * 2001-12-18 2005-05-10 Freescale Semiconductor, Inc. Lithographic template and method of formation and use
US20050098534A1 (en) * 2003-11-12 2005-05-12 Molecular Imprints, Inc. Formation of conductive templates employing indium tin oxide
US20050133954A1 (en) * 2003-12-19 2005-06-23 Homola Andrew M. Composite stamper for imprint lithography
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US20050158637A1 (en) * 2004-01-15 2005-07-21 Samsung Electronics Co., Ltd. Template, method of forming the template and method of forming a pattern on a semiconductor device using the template
US20050184436A1 (en) * 2004-02-24 2005-08-25 Korea Institute Of Machinery & Materials UV nanoimprint lithography process and apparatus
US20050185169A1 (en) * 2004-02-19 2005-08-25 Molecular Imprints, Inc. Method and system to measure characteristics of a film disposed on a substrate
US20050208171A1 (en) * 2004-02-20 2005-09-22 Canon Kabushiki Kaisha Mold and molding apparatus using the same
US6957608B1 (en) * 2002-08-02 2005-10-25 Kovio, Inc. Contact print methods
US20050266587A1 (en) * 2004-05-28 2005-12-01 Board Of Regents, The University Of Texas System Substrate support method
US6982783B2 (en) * 2002-11-13 2006-01-03 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20060019183A1 (en) * 2004-07-20 2006-01-26 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7029944B1 (en) * 2004-09-30 2006-04-18 Sharp Laboratories Of America, Inc. Methods of forming a microlens array over a substrate employing a CMP stop
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US7041604B2 (en) * 2004-09-21 2006-05-09 Molecular Imprints, Inc. Method of patterning surfaces while providing greater control of recess anisotropy
US20060172549A1 (en) * 2005-01-31 2006-08-03 Molecular Imprints, Inc. Method of separating a mold from a solidified layer disposed on a substrate
US20060172553A1 (en) * 2005-01-31 2006-08-03 Molecular Imprints, Inc. Method of retaining a substrate to a wafer chuck
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7136150B2 (en) * 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7140861B2 (en) * 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
US20070228589A1 (en) * 2002-11-13 2007-10-04 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US20070231422A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. System to vary dimensions of a thin template
US7281919B2 (en) * 2004-12-07 2007-10-16 Molecular Imprints, Inc. System for controlling a volume of material on a mold
US20070243655A1 (en) * 2006-04-18 2007-10-18 Molecular Imprints, Inc. Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features
US20070287081A1 (en) * 2004-06-03 2007-12-13 Molecular Imprints, Inc. Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
US7309225B2 (en) * 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
US7316554B2 (en) * 2005-09-21 2008-01-08 Molecular Imprints, Inc. System to control an atmosphere between a body and a substrate

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2975476A (en) * 1959-03-02 1961-03-21 John E Burke Press
US3130412A (en) * 1959-07-31 1964-04-21 Scott Paper Co Process of and apparatus for treating sheet materials and product
FR2209967B1 (en) * 1972-12-08 1979-03-30 Thomson Csf
US3946367A (en) * 1972-12-20 1976-03-23 Videonics Of Hawaii, Inc. Three dimensional electro-optical retrieval system
FR2339741B1 (en) * 1976-01-30 1980-01-04 Snecma
NL177721B (en) * 1977-03-14 1985-06-03 Philips Nv A process for producing a plastic information carrier with layered structure, as well as a device for carrying out the method.
NL7710555A (en) 1977-09-28 1979-03-30 Philips Nv Method and apparatus for the manufacture of information-containing plates.
US4223261A (en) * 1978-08-23 1980-09-16 Exxon Research & Engineering Co. Multi-phase synchronous machine system
NL7906117A (en) * 1979-08-10 1981-02-12 Philips Nv A method and apparatus for producing a plastic information carrier.
US4601861A (en) * 1982-09-30 1986-07-22 Amerace Corporation Methods and apparatus for embossing a precision optical pattern in a resinous sheet or laminate
JPS613339A (en) * 1984-06-18 1986-01-09 Hitachi Ltd Stamper for reproduction of high-density information recording disk and its production
US4514249A (en) * 1984-07-19 1985-04-30 Brown & Williamson Tobacco Corporation Device for making grooves in cigarette filters
DE3719200A1 (en) * 1987-06-09 1988-12-29 Ibm Deutschland Optical storage disk and process for their manufacture
US5876454A (en) * 1993-05-10 1999-03-02 Universite De Montreal Modified implant with bioactive conjugates on its surface for improved integration
JPH08227539A (en) * 1994-12-03 1996-09-03 Skc Ltd Production of replica stamper
US5708652A (en) * 1995-02-28 1998-01-13 Sony Corporation Multi-layer recording medium and method for producing same
JP3298607B2 (en) * 1995-09-29 2002-07-02 ソニー株式会社 A liquid crystal device and manufacturing method thereof
US5669303A (en) * 1996-03-04 1997-09-23 Motorola Apparatus and method for stamping a surface
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
SE515607C2 (en) * 1999-12-10 2001-09-10 Obducat Ab Apparatus and method for the production of structures
US6482742B1 (en) * 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US7018572B2 (en) * 2001-06-11 2006-03-28 General Electric Company Method for producing data storage media
DE10130392C2 (en) * 2001-06-23 2003-06-26 Bernd Spaeth Sliding elements, such as snow sliding elements, with improved properties
JP3580280B2 (en) * 2001-10-25 2004-10-20 株式会社日立製作所 Recording medium and manufacturing method thereof
US7144539B2 (en) * 2002-04-04 2006-12-05 Obducat Ab Imprint method and device
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6900881B2 (en) * 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6936194B2 (en) * 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US20040132301A1 (en) * 2002-09-12 2004-07-08 Harper Bruce M. Indirect fluid pressure imprinting
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
JP4340086B2 (en) * 2003-03-20 2009-10-07 株式会社日立製作所 Nanoprinting stamper, and microstructure transfer method
TW570290U (en) * 2003-05-02 2004-01-01 Ind Tech Res Inst Uniform pressing device for nanometer transfer-print
JP4183245B2 (en) * 2003-05-12 2008-11-19 キヤノン株式会社 Alignment method, exposure method using the alignment method
JP4194514B2 (en) * 2003-06-26 2008-12-10 キヤノン株式会社 Design method and method of manufacturing the exposure mask
JP2005085922A (en) * 2003-09-08 2005-03-31 Canon Inc Method of manufacturing mask, and the mask having very small opening
US20050189676A1 (en) * 2004-02-27 2005-09-01 Molecular Imprints, Inc. Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography
JP4393244B2 (en) * 2004-03-29 2010-01-06 キヤノン株式会社 Imprint apparatus
US20050230882A1 (en) * 2004-04-19 2005-10-20 Molecular Imprints, Inc. Method of forming a deep-featured template employed in imprint lithography
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
WO2006060757A2 (en) * 2004-12-01 2006-06-08 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
DE602004014002D1 (en) * 2004-12-10 2008-07-03 Essilor Int Stamp for applying a subject, methods for the stamp-making and methods of manufacturing of an object based on this stamp
US7922474B2 (en) 2005-02-17 2011-04-12 Asml Netherlands B.V. Imprint lithography
US8001924B2 (en) * 2006-03-31 2011-08-23 Asml Netherlands B.V. Imprint lithography
US20080160129A1 (en) * 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
JP4819577B2 (en) * 2006-05-31 2011-11-24 キヤノン株式会社 Pattern transfer methods and pattern transfer apparatus
US7906274B2 (en) * 2007-11-21 2011-03-15 Molecular Imprints, Inc. Method of creating a template employing a lift-off process
CN101868760B (en) * 2007-11-21 2013-01-16 分子制模股份有限公司 Porous template, method and imprinting stack for nano-imprint lithography
WO2009085286A1 (en) * 2007-12-28 2009-07-09 Molecular Imprints, Inc. Template pattern density doubling
US9323143B2 (en) * 2008-02-05 2016-04-26 Canon Nanotechnologies, Inc. Controlling template surface composition in nano-imprint lithography
US20090212012A1 (en) * 2008-02-27 2009-08-27 Molecular Imprints, Inc. Critical dimension control during template formation
JP4815464B2 (en) * 2008-03-31 2011-11-16 株式会社日立製作所 Microstructure transfer stamper and microstructure transfer device
US8187515B2 (en) * 2008-04-01 2012-05-29 Molecular Imprints, Inc. Large area roll-to-roll imprint lithography
US20100015270A1 (en) * 2008-07-15 2010-01-21 Molecular Imprints, Inc. Inner cavity system for nano-imprint lithography
JP5411557B2 (en) * 2009-04-03 2014-02-12 株式会社日立ハイテクノロジーズ Microstructure transfer device
US20110084417A1 (en) * 2009-10-08 2011-04-14 Molecular Imprints, Inc. Large area linear array nanoimprinting
US20110140304A1 (en) * 2009-12-10 2011-06-16 Molecular Imprints, Inc. Imprint lithography template
US20110272838A1 (en) * 2010-05-06 2011-11-10 Matt Malloy Apparatus, System, and Method for Nanoimprint Template with a Backside Recess Having Tapered Sidewalls

Patent Citations (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3677178A (en) * 1965-10-11 1972-07-18 Scott Paper Co Dry planographic plates and methods, production and use
US3577593A (en) * 1968-10-29 1971-05-04 Bird & Son Apparatus for heat and vacuum-pressure machine molding
US4722878A (en) * 1984-11-09 1988-02-02 Mitsubishi Denki Kabushiki Kaisha Photomask material
US4959252A (en) * 1986-09-29 1990-09-25 Rhone-Poulenc Chimie Highly oriented thermotropic optical disc member
US5016691A (en) * 1990-06-19 1991-05-21 Lucien Bernier Apparatus for centering template guide on router
US5206983A (en) * 1991-06-24 1993-05-04 Wisconsin Alumni Research Foundation Method of manufacturing micromechanical devices
US5348616A (en) * 1993-05-03 1994-09-20 Motorola, Inc. Method for patterning a mold
US5509041A (en) * 1994-06-30 1996-04-16 Motorola, Inc. X-ray lithography method for irradiating an object to form a pattern thereon
US5464711A (en) * 1994-08-01 1995-11-07 Motorola Inc. Process for fabricating an X-ray absorbing mask
US5477058A (en) * 1994-11-09 1995-12-19 Kabushiki Kaisha Toshiba Attenuated phase-shifting mask with opaque reticle alignment marks
US5621594A (en) * 1995-02-17 1997-04-15 Aiwa Research And Development, Inc. Electroplated thin film conductor coil assembly
US5684660A (en) * 1995-02-17 1997-11-04 Aiwa Research And Development, Inc. Thin film coil head assembly with protective planarizing cocoon structure
US5804017A (en) * 1995-07-27 1998-09-08 Imation Corp. Method and apparatus for making an optical information record
US6309580B1 (en) * 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US5817376A (en) * 1996-03-26 1998-10-06 Minnesota Mining And Manufacturing Company Free-radically polymerizable compositions capable of being coated by electrostatic assistance
US6753131B1 (en) * 1996-07-22 2004-06-22 President And Fellows Of Harvard College Transparent elastomeric, contact-mode photolithography mask, sensor, and wavefront engineering element
US6368752B1 (en) * 1996-10-29 2002-04-09 Motorola, Inc. Low stress hard mask formation method during refractory radiation mask fabrication
US5885514A (en) * 1996-12-09 1999-03-23 Dana Corporation Ambient UVL-curable elastomer mold apparatus
US6305925B1 (en) * 1997-08-01 2001-10-23 Sacmi- Cooperative Meccanici Imola - Soc. Coop. A.R.L. Apparatus for pressing ceramic powders
US5937758A (en) * 1997-11-26 1999-08-17 Motorola, Inc. Micro-contact printing stamp
US6117708A (en) * 1998-02-05 2000-09-12 Micron Technology, Inc. Use of residual organic compounds to facilitate gate break on a carrier substrate for a semiconductor device
US6316290B1 (en) * 1998-02-05 2001-11-13 Micron Technology, Inc. Method of fabricating a semiconductor device utilizing a residual organic compound to facilitate gate break on a carrier substrate
US6607173B2 (en) * 1998-09-03 2003-08-19 Micron Technology, Inc. Film on a surface of a mold used during semiconductor device fabrication
US6446933B1 (en) * 1998-09-03 2002-09-10 Micron Technology, Inc. Film on a surface of a mold used during semiconductor device fabrication
US6261469B1 (en) * 1998-10-13 2001-07-17 Honeywell International Inc. Three dimensionally periodic structural assemblies on nanometer and longer scales
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6190929B1 (en) * 1999-07-23 2001-02-20 Micron Technology, Inc. Methods of forming semiconductor devices and methods of forming field emission displays
US6780001B2 (en) * 1999-07-30 2004-08-24 Formfactor, Inc. Forming tool for forming a contoured microelectronic spring mold
US6165911A (en) * 1999-12-29 2000-12-26 Calveley; Peter Braden Method of patterning a metal layer
US6465365B1 (en) * 2000-04-07 2002-10-15 Koninklijke Philips Electronics N.V. Method of improving adhesion of cap oxide to nanoporous silica for integrated circuit fabrication
US6399406B2 (en) * 2000-06-19 2002-06-04 International Business Machines Corporation Encapsulated MEMS band-pass filter for integrated circuits and method of fabrication thereof
US20020159918A1 (en) * 2000-06-25 2002-10-31 Fan-Gang Tseng Micro-fabricated stamp array for depositing biologic diagnostic testing samples on bio-bindable surface
US20040163563A1 (en) * 2000-07-16 2004-08-26 The Board Of Regents, The University Of Texas System Imprint lithography template having a mold to compensate for material changes of an underlying liquid
US20040141163A1 (en) * 2000-07-16 2004-07-22 The University Of Texas System, Board Of Regents, Ut System Device for holding a template for use in imprint lithography
US20030026896A1 (en) * 2000-08-03 2003-02-06 Ichiro Shinkoda Method and apparatus for fabrication of color filters
US7229273B2 (en) * 2000-10-12 2007-06-12 Board Of Regents, The University Of Texas System Imprint lithography template having a feature size under 250 nm
US6696220B2 (en) * 2000-10-12 2004-02-24 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro-and nano-imprint lithography
US20020135099A1 (en) * 2001-01-19 2002-09-26 Robinson Timothy R. Mold with metal oxide surface compatible with ionic release agents
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US20020122993A1 (en) * 2001-03-04 2002-09-05 Nikon Corporation Stencil reticles for charged-particle-beam microlithography, and fabrication methods for making same
US6664026B2 (en) * 2001-03-22 2003-12-16 International Business Machines Corporation Method of manufacturing high aspect ratio photolithographic features
US6517977B2 (en) * 2001-03-28 2003-02-11 Motorola, Inc. Lithographic template and method of formation and use
US20020175298A1 (en) * 2001-05-23 2002-11-28 Akemi Moniwa Method of manufacturing semiconductor device
US6890688B2 (en) * 2001-12-18 2005-05-10 Freescale Semiconductor, Inc. Lithographic template and method of formation and use
US6743368B2 (en) * 2002-01-31 2004-06-01 Hewlett-Packard Development Company, L.P. Nano-size imprinting stamp using spacer technique
US6605849B1 (en) * 2002-02-14 2003-08-12 Symmetricom, Inc. MEMS analog frequency divider
US20030180631A1 (en) * 2002-02-22 2003-09-25 Hoya Corporation Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same
US20030224262A1 (en) * 2002-03-01 2003-12-04 Asml Netherlands, B.V. Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods
US6716754B2 (en) * 2002-03-12 2004-04-06 Micron Technology, Inc. Methods of forming patterns and molds for semiconductor constructions
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US6852454B2 (en) * 2002-06-18 2005-02-08 Freescale Semiconductor, Inc. Multi-tiered lithographic template and method of formation and use
US20070122942A1 (en) * 2002-07-08 2007-05-31 Molecular Imprints, Inc. Conforming Template for Patterning Liquids Disposed on Substrates
US20050051698A1 (en) * 2002-07-08 2005-03-10 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US7179079B2 (en) * 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US6957608B1 (en) * 2002-08-02 2005-10-25 Kovio, Inc. Contact print methods
US20070114686A1 (en) * 2002-11-13 2007-05-24 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US7224443B2 (en) * 2002-11-13 2007-05-29 Molecular Imprints, Inc. Imprint lithography substrate processing tool for modulating shapes of substrates
US20060176466A1 (en) * 2002-11-13 2006-08-10 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20070228589A1 (en) * 2002-11-13 2007-10-04 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US6982783B2 (en) * 2002-11-13 2006-01-03 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20040197712A1 (en) * 2002-12-02 2004-10-07 Jacobson Joseph M. System for contact printing
US20040202865A1 (en) * 2003-04-08 2004-10-14 Andrew Homola Release coating for stamper
US6808646B1 (en) * 2003-04-29 2004-10-26 Hewlett-Packard Development Company, L.P. Method of replicating a high resolution three-dimensional imprint pattern on a compliant media of arbitrary size
US20040219246A1 (en) * 2003-04-29 2004-11-04 Jeans Albert H. Apparatus for embossing a flexible substrate with a pattern carried by an optically transparent compliant media
US7150622B2 (en) * 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US20050006343A1 (en) * 2003-07-09 2005-01-13 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US7136150B2 (en) * 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7270533B2 (en) * 2003-10-02 2007-09-18 University Of Texas System, Board Of Regents System for creating a turbulent flow of fluid between a mold and a substrate
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US20050098534A1 (en) * 2003-11-12 2005-05-12 Molecular Imprints, Inc. Formation of conductive templates employing indium tin oxide
US20050133954A1 (en) * 2003-12-19 2005-06-23 Homola Andrew M. Composite stamper for imprint lithography
US20050158637A1 (en) * 2004-01-15 2005-07-21 Samsung Electronics Co., Ltd. Template, method of forming the template and method of forming a pattern on a semiconductor device using the template
US20050185169A1 (en) * 2004-02-19 2005-08-25 Molecular Imprints, Inc. Method and system to measure characteristics of a film disposed on a substrate
US20050208171A1 (en) * 2004-02-20 2005-09-22 Canon Kabushiki Kaisha Mold and molding apparatus using the same
US20050184436A1 (en) * 2004-02-24 2005-08-25 Korea Institute Of Machinery & Materials UV nanoimprint lithography process and apparatus
US7140861B2 (en) * 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US7279113B2 (en) * 2004-04-27 2007-10-09 Molecular Imprints, Inc. Method of forming a compliant template for UV imprinting
US7259833B2 (en) * 2004-05-28 2007-08-21 Board Of Regents, The Universtiy Of Texas System Substrate support method
US7245358B2 (en) * 2004-05-28 2007-07-17 Board Of Regents, The University Of Texas System Substrate support system
US20050266587A1 (en) * 2004-05-28 2005-12-01 Board Of Regents, The University Of Texas System Substrate support method
US20070287081A1 (en) * 2004-06-03 2007-12-13 Molecular Imprints, Inc. Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
US20060019183A1 (en) * 2004-07-20 2006-01-26 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7309225B2 (en) * 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
US7041604B2 (en) * 2004-09-21 2006-05-09 Molecular Imprints, Inc. Method of patterning surfaces while providing greater control of recess anisotropy
US7029944B1 (en) * 2004-09-30 2006-04-18 Sharp Laboratories Of America, Inc. Methods of forming a microlens array over a substrate employing a CMP stop
US7281919B2 (en) * 2004-12-07 2007-10-16 Molecular Imprints, Inc. System for controlling a volume of material on a mold
US20060172549A1 (en) * 2005-01-31 2006-08-03 Molecular Imprints, Inc. Method of separating a mold from a solidified layer disposed on a substrate
US20060172031A1 (en) * 2005-01-31 2006-08-03 Molecular Imprints, Inc. Chucking system for nano-manufacturing
US20070243279A1 (en) * 2005-01-31 2007-10-18 Molecular Imprints, Inc. Imprint Lithography Template to Facilitate Control of Liquid Movement
US20060172553A1 (en) * 2005-01-31 2006-08-03 Molecular Imprints, Inc. Method of retaining a substrate to a wafer chuck
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
US7316554B2 (en) * 2005-09-21 2008-01-08 Molecular Imprints, Inc. System to control an atmosphere between a body and a substrate
US20070231422A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. System to vary dimensions of a thin template
US20070243655A1 (en) * 2006-04-18 2007-10-18 Molecular Imprints, Inc. Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110171340A1 (en) * 2002-07-08 2011-07-14 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US8556616B2 (en) 2002-07-08 2013-10-15 Molecular Imprints, Inc. Template having a varying thickness to facilitate expelling a gas positioned between a substrate and the template
US8889332B2 (en) 2004-10-18 2014-11-18 Canon Nanotechnologies, Inc. Low-K dielectric functional imprinting materials
US9778562B2 (en) 2007-11-21 2017-10-03 Canon Nanotechnologies, Inc. Porous template and imprinting stack for nano-imprint lithography
US20090140458A1 (en) * 2007-11-21 2009-06-04 Molecular Imprints, Inc. Porous template and imprinting stack for nano-imprint lithography
US9323143B2 (en) 2008-02-05 2016-04-26 Canon Nanotechnologies, Inc. Controlling template surface composition in nano-imprint lithography
WO2010008508A1 (en) * 2008-07-15 2010-01-21 Molecular Imprints, Inc. Inner cavity system for nano-imprint lithography
US20100015270A1 (en) * 2008-07-15 2010-01-21 Molecular Imprints, Inc. Inner cavity system for nano-imprint lithography
US20100072671A1 (en) * 2008-09-25 2010-03-25 Molecular Imprints, Inc. Nano-imprint lithography template fabrication and treatment
US20100084376A1 (en) * 2008-10-02 2010-04-08 Molecular Imprints, Inc. Nano-imprint lithography templates
US8470188B2 (en) 2008-10-02 2013-06-25 Molecular Imprints, Inc. Nano-imprint lithography templates
US20100104852A1 (en) * 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of High-Throughput Nano-Imprint Lithography Templates
US20140117574A1 (en) * 2008-10-24 2014-05-01 Molecular Imprints, Inc. Strain and Kinetics Control During Separation Phase of Imprint Process
US8652393B2 (en) 2008-10-24 2014-02-18 Molecular Imprints, Inc. Strain and kinetics control during separation phase of imprint process
US20100102469A1 (en) * 2008-10-24 2010-04-29 Molecular Imprints, Inc. Strain and Kinetics Control During Separation Phase of Imprint Process
EP2221163A1 (en) * 2009-02-20 2010-08-25 API Group PLC Machine head for production of a surface relief
US8163222B2 (en) 2009-02-20 2012-04-24 Api Group Plc Machine head for production of a surface relief
US20100213637A1 (en) * 2009-02-20 2010-08-26 Api Group Plc Machine head for production of a surface relief
US20110084417A1 (en) * 2009-10-08 2011-04-14 Molecular Imprints, Inc. Large area linear array nanoimprinting
WO2011043820A1 (en) 2009-10-08 2011-04-14 Molecular Imprints, Inc. Large area linear array nanoimprinting
US20110183027A1 (en) * 2010-01-26 2011-07-28 Molecular Imprints, Inc. Micro-Conformal Templates for Nanoimprint Lithography
US8616873B2 (en) 2010-01-26 2013-12-31 Molecular Imprints, Inc. Micro-conformal templates for nanoimprint lithography
US20110189329A1 (en) * 2010-01-29 2011-08-04 Molecular Imprints, Inc. Ultra-Compliant Nanoimprint Lithography Template
US20110272838A1 (en) * 2010-05-06 2011-11-10 Matt Malloy Apparatus, System, and Method for Nanoimprint Template with a Backside Recess Having Tapered Sidewalls
US20120061875A1 (en) * 2010-09-13 2012-03-15 Takuya Kono Template chuck, imprint apparatus, and pattern forming method
WO2012083578A1 (en) * 2010-12-22 2012-06-28 青岛理工大学 Device and method for nano-imprinting full wafer
US8741199B2 (en) 2010-12-22 2014-06-03 Qingdao Technological University Method and device for full wafer nanoimprint lithography
US9902037B2 (en) 2011-10-24 2018-02-27 Shin-Etsu Chemical Co., Ltd. Electronic grade glass substrate and making method
US9205528B2 (en) 2011-10-24 2015-12-08 Shin-Etsu Chemical Co., Ltd. Electronic grade glass substrate and making method
EP2587312A1 (en) * 2011-10-24 2013-05-01 Shin-Etsu Chemical Co., Ltd. Electronic grade glass substrate and making method
US9278857B2 (en) * 2012-01-31 2016-03-08 Seagate Technology Inc. Method of surface tension control to reduce trapped gas bubbles
US9610712B2 (en) * 2012-01-31 2017-04-04 Seagate Technology Llc Method of surface tension control to reduce trapped gas bubbles
US20130196122A1 (en) * 2012-01-31 2013-08-01 Seagate Technology, Llc Method of surface tension control to reduce trapped gas bubbles
US20160158972A1 (en) * 2012-01-31 2016-06-09 Seagate Technology Llc Method of surface tension control to reduce trapped gas bubbles
US9798231B2 (en) 2012-02-07 2017-10-24 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
US10018909B2 (en) 2012-02-07 2018-07-10 Canon Kabushiki Kaisha Imprint apparatus and method of manufacturing article
CN104094379A (en) * 2012-02-07 2014-10-08 佳能株式会社 Imprint apparatus and method of manufacturing article
CN104094380A (en) * 2012-02-07 2014-10-08 佳能株式会社 Imprint apparatus and method of manufacturing article
US9437414B2 (en) * 2012-02-29 2016-09-06 Kabushiki Kaisha Toshiba Pattern forming device and semiconductor device manufacturing method
US20130221571A1 (en) * 2012-02-29 2013-08-29 Kabushiki Kaisha Toshiba Pattern forming device and semiconductor device manufacturing method
CN106030756A (en) * 2013-12-31 2016-10-12 佳能纳米技术公司 Asymmetric template shape modulation for partial field imprinting
JP2017502510A (en) * 2013-12-31 2017-01-19 キャノン・ナノテクノロジーズ・インコーポレーテッド Regulation of asymmetric template shape for the partial field imprint
US20150183151A1 (en) * 2013-12-31 2015-07-02 Canon Nanotechnologies, Inc. Asymmetric Template Shape Modulation for Partial Field Imprinting
JP2015198215A (en) * 2014-04-03 2015-11-09 大日本印刷株式会社 Substrate for imprint mold and manufacturing method therefor, and imprint mold
TWI623411B (en) * 2015-02-13 2018-05-11 Canon Kk Mold, imprint apparatus, and method of manufacturing article
US9793120B2 (en) 2015-06-16 2017-10-17 Toshiba Memory Corporation Device substrate, method of manufacturing device substrate, and method of manufacturing semiconductor device
US10192741B2 (en) 2015-06-16 2019-01-29 Toshiba Memory Corporation Device substrate, method of manufacturing device substrate, and method of manufacturing semiconductor device
JP2017028322A (en) * 2016-10-24 2017-02-02 大日本印刷株式会社 Nanoimprinting template

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