US20040065252A1 - Method of forming a layer on a substrate to facilitate fabrication of metrology standards - Google Patents
Method of forming a layer on a substrate to facilitate fabrication of metrology standards Download PDFInfo
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- US20040065252A1 US20040065252A1 US10/264,926 US26492602A US2004065252A1 US 20040065252 A1 US20040065252 A1 US 20040065252A1 US 26492602 A US26492602 A US 26492602A US 2004065252 A1 US2004065252 A1 US 2004065252A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Definitions
- the field of invention relates generally to imprint lithography. More particularly, the present invention is directed to forming layers on a substrate to facilitate fabrication of high resolution patterning features suited for use as metrology standards.
- Metrology standards are employed in many industries to measure the operation of varying equipment and processes.
- a typical metrology standard may include grating structures, L-shaped structures and other common patterning geometries found on production devices. In this manner, the metrology standards facilitate measurement of the performance of the processing equipment.
- Conventional metrology standards are manufactured from a variety of conventional processes, such as e-beam lithography, optical lithography, and using various materials. Exemplary materials include insulative, conductive or semiconductive materials.
- a post process characterization technique is employed to measure the accuracy of the metrology features. This is due, in part, to the difficulty in repeatably producing reliable accurate metrology standards.
- a drawback with the conventional processes for manufacturing metrology standards is that the post process characterization step is time consuming.
- the difficulty in repeatably producing reliable metrology standards results in a low yield rate.
- a processing technique that may prove beneficial in overcoming the drawbacks of the conventional processes for fabricating metrology standards is known as imprint lithography.
- FIG. 1 An exemplary imprint lithography process is disclosed in U.S. Pat. No. 6,334,960 to Willson et al.
- Willson et al. disclose a method of forming a relief image in a structure. The method includes providing a substrate having a planarization layer. The planarization layer is covered with a polymerizable fluid composition. A mold makes mechanical contact with the polymerizable fluid. The mold includes a relief structure, and the polymerizable fluid composition fills the relief structure. The polymerizable fluid composition is then subjected to conditions to solidify and polymerize the same, forming a solidified polymeric material on the planarization layer that contains a relief structure complimentary to that of the mold.
- the mold is then separated from the solid polymeric material such that a replica of the relief structure in the mold is formed in the solidified polymeric material.
- the planarization layer and the solidified polymeric material are subjected to an environment to selectively etch the planarization layer relative to the solidified polymeric material such that a relief image is formed in the planarization layer.
- the present invention is directed to a method of forming a layer on a solidified portion of a substrate that facilitates fabrication of metrology standards.
- the method features defining a planarity of the layer, which is formed by creating a flowable region on the solidified portion of the substrate, as a function of the volume of the flowable material in the region. Recognizing that the topology of a substrate upon which the layer is formed is not planar, on the nano-scale, the present invention is directed to fabricating high resolution features on the substrate and transferring the features into a solidified region of the substrate.
- the method includes creating a flowable region on the substrate.
- the flowable region has a volume associated therewith.
- a layer is defined in the flowable region to have opposed sides and an area associated therewith.
- One of the opposed sides faces the substrate, defining an interface thereat.
- the remaining side faces away from the substrate, and the layer has a thickness measured between the opposed sides.
- the volume is selected to maximize the planarity of the interface over the area.
- the volume of the flowable region determines the area of the substrate to be covered by the layer that maximizes the planarity of the interface.
- the flowable region is formed from a bead of polymerizable liquid to form the layer using imprint lithography.
- another method in accordance with the present invention includes depositing a bead of polymerizable liquid upon the substrate.
- the bead has a volume associated therewith and is spread over an area of the substrate by contacting the bead with a mold.
- the mold has a plurality of relief structures, defined by multiple recessions and protrusions, formed into the mold surface.
- the contact with the mold defines a layer having first and second opposed sides.
- the first side faces the substrate and has a planarity associated therewith.
- the second side faces away from the substrate and has a plurality of recesses therein.
- Each of the recesses has a nadir.
- the thickness of the layer is measured between the first side and a plane that is coplanar with each nadir associated with the plurality of recesses.
- the planarity is defined by the volume.
- FIG. 1 is a simplified elevation view of a lithographic system in accordance with the present invention
- FIG. 2 is a simplified representation of material from which an imprinting layer, shown in FIG. 1, is comprised before being polymerized and cross-linked;
- FIG. 3 is a simplified representation of cross-linked polymer material into which the material shown in FIG. 2 is transformed after being subjected to radiation;
- FIG. 4 is a simplified elevation view of the mold spaced-apart from the imprinting layer, shown in FIG. 1, after patterning of the imprinting layer;
- FIG. 5 is a detailed view of the imprinting layer shown in FIG. 4 demonstrating the non-planarity of substrate
- FIG. 6 is a detailed view of the imprinting layer shown in FIG. 5 showing the transfer of the features in the imprinting layer into the substrate during an etching process;
- FIG. 7 is a detailed view of the substrate shown in FIG. 6 after completion of the etch process that transfers features of the imprinting layer into the substrate;
- FIG. 8 is a perspective view of the substrate shown in FIGS. 1 - 7 ;
- FIG. 9 is a detailed view of a mold shown in FIG. 1, in accordance with one embodiment of the present invention.
- FIG. 10 is a detailed view of the imprinting layer shown in FIG. 4 using a planarization layer to overcome the non-planarity of the substrate, in accordance with a second embodiment of the present invention
- FIG. 11 is plan view of the substrate shown in FIG. 10, with a patterned imprinting layer being present.
- FIG. 12 is a plan view of the substrate shown in FIG. 11 after etching of the pattern into planarization layer.
- a lithographic system in accordance with an embodiment of the present invention includes a substrate 10 , having a substantially planar region shown as surface 12 . Disposed opposite substrate 10 is an imprint device, such as a mold 14 , having a plurality of features thereon, forming a plurality of spaced-apart recessions 16 and protrusions 18 .
- recessions 16 are a plurality of grooves extending along a direction parallel to protrusions 18 that provide a cross-section of mold 14 with a shape of a battlement.
- recessions 16 may correspond to virtually any feature required to create an integrated circuit.
- a translation device 20 is connected between mold 14 and substrate 10 to vary a distance “d” between mold 14 and substrate 10 .
- a radiation source 22 is located so that mold 14 is positioned between radiation source 22 and substrate 10 . Radiation source 22 is configured to impinge radiation on substrate 10 . To realize this, mold 14 is fabricated from material that allows it to be substantially transparent to the radiation produced by radiation source 22 .
- a flowable region such as an imprinting layer 24 , is disposed formed on surface 12 .
- Flowable region may be formed using any known technique such as a hot embossing process disclosed in U.S. Pat. No. 5,772,905, which is incorporated by reference in its entirety herein, or a laser assisted direct imprinting (LADI) process of the type described by Chou et al. in Ultrafast and Direct Imprint of Nanostructures in Silicon, Nature, Col. 417, pp. 835-837, June 2002.
- LADI laser assisted direct imprinting
- flowable region is formed using imprint lithography.
- flowable region consists of imprinting layer 24 deposited as a plurality of spaced-apart discrete beads 25 of material 25 a on substrate 10 , discussed more fully below.
- Imprinting layer 24 is formed from a material 25 a that may be selectively polymerized and cross-linked to record a desired pattern.
- Material 25 a is shown in FIG. 3 as being cross-linked at points 25 b, forming cross-linked polymer material 25 c.
- the pattern recorded by imprinting layer 24 is produced, in part, by mechanical contact with mold 14 .
- translation device 20 reduces the distance “d” to allow imprinting layer 24 to come into mechanical contact with mold 14 , spreading beads 25 so as to form imprinting layer 24 with a contiguous formation of material 25 a over surface 12 .
- distance “d” is reduced to allow sub-portions 24 a of imprinting layer 24 to ingress into and fill recessions 16 .
- material 25 a is provided with the requisite properties to completely fill recessions while covering surface 12 with a contiguous formation of material 25 a.
- sub-portions 24 a of imprinting layer 24 in superimposition with protrusions 18 remain after the desired, usually minimum distance “d”, has been reached, leaving sub-portions 24 a with a thickness t 1 , and sub-portions 24 b with a thickness, t 2 .
- Thicknesses “t 1 ” and “t 2 ” may be any thickness desired, dependent upon the application.
- t 1 is selected so as to be no greater than twice width u of sub-portions 24 a , i.e., t 1 ⁇ 2u.
- radiation source 22 produces actinic radiation that polymerizes and cross-links material 25 a, forming cross-linked polymer material 25 c.
- the composition of imprinting layer 24 transforms from material 25 a to material 25 c, which is a solid.
- material 25 c is solidified to provide side 24 c of imprinting layer 24 with a shape conforming to a shape of a surface 14 a of mold 14 , shown more clearly in FIG. 4.
- an exemplary radiation source 22 may produce ultraviolet radiation.
- Other radiation sources may be employed, such as thermal, electromagnetic and the like.
- the selection of radiation employed to initiate the polymerization of the material in imprinting layer 24 is known to one skilled in the art and typically depends on the specific application which is desired.
- translation device 20 increases the distance “d” so that mold 14 and imprinting layer 24 are spaced-apart.
- substrate 10 and imprinting layer 24 may be etched to increase the aspect ratio of recesses 30 in imprinting layer 24 .
- the material from which imprinting layer 24 is formed may be varied to define a relative etch rate with respect to substrate 10 , as desired.
- the relative etch rate of imprinting layer 24 to substrate 10 may be in a range of about 1.5:1 to about 100:1.
- imprinting layer 24 may be provided with an etch differential with respect to photo-resist material (not shown) selectively disposed on side 24 c.
- the photoresist material (not shown) may be provided to further pattern imprinting layer 24 , using known techniques. Any etch process may be employed, dependent upon the etch rate desired and the underlying constituents that form substrate 10 and imprinting layer 24 . Exemplary etch processes may include plasma etching, reactive ion etching, chemical wet etching and the like.
- a problem addressed by the present invention concerns formation of features on substrates having extreme topologies when compared to the dimensions of features formed thereon.
- substrate 10 appears to present a non-planar surface 12 .
- This has been traditionally found in substrates formed from gallium arsenide (GAs) or indium phosphide (InP).
- Gs gallium arsenide
- InP indium phosphide
- substrates that have historically been considered planar may present a non-planar surface to features formed thereon.
- substrate 10 is shown with variations in surface height.
- the variation in height frustrates attempts to control the dimensions of features formed into substrate 10 , because of the resulting differences in distances between nadirs 130 a and 160 a from surface 12 , shown as h 1 and h 2 , respectively.
- the height differential, ⁇ h, between surface nadir 130 a and nadir 160 a is defined as follows:
- an etch differential occurs, i.e., the etch process to which substrate 10 is exposed to form vias therein differs over substrate surface 12 .
- the etch differential is problematic, because it results in anisotropic etching that distorts the features transferred into substrate 10 from imprinting layer 24 .
- the distortion presents, inter alia, by variations in width w 3 between vias 231 , 241 , 251 and 261 formed into substrate 10 .
- the width of recesses 131 , 141 , 151 and 161 , w 1 should be substantially similar to width w 3 .
- the height differential, ⁇ h results in w 3 of vias 251 and 261 being greater than w 1 , as well as larger than w 3 of vias 231 and 241 .
- the difference between the widths w 3 of vias 231 , 241 , 251 and 261 defines a differential width ⁇ w.
- the greater the height differential, ⁇ h the greater the differential width ⁇ w.
- ⁇ w of via 231 and 261 is greater than ⁇ w of vias 231 and 251 .
- the present invention seeks to minimize the height differential ⁇ h by minimizing layer thickness t 2 and selecting a region of substrate 10 upon which to locate and define area, A, so as to maximize the planarity of area A.
- Optimized production yield favors maximization of area A.
- minimization of area, A maximizes the planarity of the same.
- attempts to obtain large production yields appears to be in conflict with maximizing the planarity of area, A, because maximizing the area A reduces the planarity of surface 12 associated with area, A.
- the location and size of area, A is chosen to maximize the planarity of surface 12 in area, A of surface 12 over which vias 231 , 241 , 251 and 261 are formed. It is believed that by appropriately selecting area, A, over which vias 231 , 241 , 251 and 261 are formed, it will be possible to deposit an imprinting layer 24 of sufficiently small thickness t 2 while minimizing height differential ⁇ h, if not abrogating the height differential ⁇ h entirely. This provides greater control over the dimensions of recesses 131 , 141 , 151 and 161 , that may be subsequently formed into imprinting layer 24 , thereby affording the fabrication of features on the order of a few nanometers.
- the minimum layer thickness was chosen to avoid visco-elastic behavior of the liquid in beads 25 . It is believed that visco-elastic behavior makes difficult controlling the imprinting process. For example, the visco-elastic behavior defines a minimum thickness that layer 24 may reach, after which fluid properties, such as flow, cease. This may present by bulges in nadirs 130 a, 140 a, 150 a and 160 a as well as other problematic characteristics.
- the volume is typically selected to maximize the planarity of side 24 d, which forms an interface with surface 12 .
- the size and locus of area, A may be chosen to maximize planarity over area A. Knowing A and the desired layer thickness t 2 , the volume, V, may be derived from the following relationship:
- equation (2) is modified to take into consideration volumetric changes required due to the varying thickness of layer 24 over area, A.
- the volume, V is chosen so as to minimize thickness t 2 , while avoiding visco-elastic behavior and providing the requisite quantity of liquid to include features, such as sub-portions 24 a of thickness t 1 , and recess 131 , 141 , 151 and 161 into layer 24 .
- the volume, V, of liquid in beads 25 may be defined as follows:
- V A ( t 2 +ft 1 ) (3)
- f is the fill factor and A, t 2 and t 1 are as defined above.
- recessions 16 and protrusions 18 may be designed to define a uniform fill factor over mold surface 14 a.
- the size of etch areas will be substantially equal to the size of non-etch areas of substrate 10 in area A, where features on mold surface 14 a are imprinted. This arrangement of features reduces, if not avoids, variations in imprinting layer 24 thickness by minimizing pattern density variations.
- mold surface 14 a may be formed with uniform period features having common shapes, as well as having differing shapes, as shown. Further, recessions 16 and protrusions 18 may be arranged on mold 14 to form virtually any desired geometric pattern. Exemplary patterns include a series of linear grooves/projections 80 , a series of L-Shaped grooves/projections 82 , a series of intersecting grooves/projections defining a matrix 84 , and a series of arcuate grooves/projections 86 . Additionally, pillars 88 may project from mold 14 and have any cross-sectional shape desired, e.g., circular, polygonal etc.
- further control of formation of vias 231 , 241 , 251 and 261 may be achieved by orientating the lattice structure of substrate 10 to ensure that sidewalls 231 a, 241 a, 251 a and 261 a are orientated to be substantially parallel to one of the crystal planes of the material from which the substrate 10 is formed.
- substrate 10 may be fabricated so that the sidewalls 231 a, 241 a, 251 a and 261 a extend parallel to either of the 100 , 010 or the 110 planes.
- the force ⁇ overscore (F) ⁇ applied by mold 14 should be deminimis and only sufficient magnitude to facilitate contact with beads 25 .
- the spreading of liquid in beads 25 should be attributable primarily through capillary action with mold surface 14 a.
- material 25 a are important to efficiently pattern substrate 10 in light of the unique deposition process that is in accordance with the present invention.
- material 25 a is deposited on substrate 10 as a plurality of discrete and spaced-apart beads 25 .
- the combined volume of beads 25 is such that the material 25 a is distributed appropriately over area of surface 12 where imprinting layer 24 is to be formed.
- imprinting layer 24 is spread and patterned concurrently, with the pattern being subsequently set by exposure to radiation, such as ultraviolet radiation.
- material 25 a has certain characteristics to facilitate even spreading of material 25 a in beads 25 over surface 12 so that the all thicknesses t 1 are substantially uniform and all thickness t 2 are substantially uniform and all widths, w 1 , are substantially uniform.
- the desirable characteristics include having a suitable viscosity to demonstrate satisfaction with these characteristics, as well as the ability to wet surface of substrate 10 and avoid subsequent pit or hole formation after polymerization.
- the wettability of imprinting layer 24 should be such that the angle, ⁇ 1 , is defined as follows:
- imprinting layer 24 may be made sufficiently thin while avoiding formation of pits or holes in the thinner regions of imprinting layer 24 .
- material 25 a another desirable characteristic that it is desired for material 25 a to possess is thermal stability such that the variation in an angle ⁇ , measured between a nadir 30 a of a recess 30 and a sidewall 30 b thereof, does not vary more than 10% after being heated to 75° C. for thirty (30) minutes. Additionally, material 25 a should transform to material 25 c, i.e., polymerize and cross-link, when subjected to a pulse of radiation containing less than 5 J cm ⁇ 2 . In the present example, polymerization and cross-linking was determined by analyzing the infrared absorption of the “C ⁇ C” bond contained in material 25 a.
- substrate surface 12 be relatively inert toward material 25 a, such that less than 500 nm of surface 12 be dissolved as a result sixty (60) seconds of contact with material 25 a. It is further desired that the wetting of mold 14 by imprinting layer 24 be minimized, i.e., wetting angle, ⁇ 2 , be should be of requisite magnitude. To that end, the wetting angle, ⁇ 2 , should be greater than 75°.
- substrate 10 may be formed from a number of different materials.
- the chemical composition of surface 12 varies dependent upon the material from which substrate 10 is formed.
- substrate 10 may be formed from silicon, plastics, gallium arsenide, mercury telluride, and composites thereof.
- substrate 10 may include one or more layers in region, e.g., dielectric layer, metal layers, semiconductor layer and the like.
- the constituent components of material 25 a consist of acrylated monomers or methacrylated monomers that are not silyated, a cross-linking agent, and an initiator.
- the non-silyated acryl or methacryl monomers are selected to provide material 25 a with a minimal viscosity, e.g., viscosity approximating the viscosity of water (1-2 cps) or less.
- a minimal viscosity e.g., viscosity approximating the viscosity of water (1-2 cps) or less.
- the range of viscosity that may be employed is from 1 to 1,000 centipoise or greater.
- the cross-linking agent is included to cross-link the molecules of the non-silyated monomers, providing material 25 a with the properties to record a pattern thereon having very small feature sizes, on the order of a few nanometers and to provide the aforementioned thermal stability for further processing.
- the initiator is provided to produce a free radical reaction in response to radiation, causing the non-silyated monomers and the cross-linking agent to polymerize and cross-link, forming a cross-linked polymer material 25 c.
- a photo-initiator responsive to ultraviolet radiation is employed.
- a silyated monomer may also be included in material 25 a to control the etch rate of the resulting cross-linked polymer material 25 c, without substantially affecting the viscosity of material 25 a.
- non-silyated monomers include, but are not limited to, butyl acrylate, methyl acrylate, methyl methacrylate, or mixtures thereof.
- the non-silyated monomer may make up approximately 25% to 60% by weight of material 25 a. It is believed that the monomer provides adhesion to an underlying organic transfer layer, discussed more fully below.
- the cross-linking agent is a monomer that includes two or more polymerizable groups.
- polyfunctional siloxane derivatives may be used as a cross-linking agent.
- An example of a polyfunctional siloxane derivative is 1,3-bis(3-methacryloxypropyl)-tetramethyl disiloxane.
- Another suitable cross-linking agent consists of ethylene diol diacrylate.
- the cross-linking agent may be present in material 25 a in amounts of up to 20% by weight, but is more typically present in an amount of 5% to 15% by weight.
- the initiator may be any component that initiates a free radical reaction in response to radiation, produced by radiation source 22 , shown in FIG. 1, impinging thereupon and being absorbed thereby.
- Suitable initiators may include, but are not limited to, photo-initiators such as 1-hydroxycyclohexyl phenyl ketone or phenylbis(2,4,6-trimethyl benzoyl) phosphine oxide.
- the initiator may be present in material 25 a in amounts of up to 5% by weight, but is typically present in an amount of 1% to 4% by weight.
- suitable silylated monomers may include, but are not limited to, silyl-acryloxy and silyl methacryloxy derivatives. Specific examples are methacryloxypropyl tris(tri-methylsiloxy)silane and (3-acryloxypropyl)tris(tri-methoxysiloxy)-silane. Silylated monomers may be present in material 25 a in amounts from 25% to 50% by weight.
- the curable liquid may also include a dimethyl siloxane derivative. Examples of dimethyl siloxane derivatives include, but are not limited to, (acryloxypropyl) methylsiloxane dimethylsiloxane copolymer.
- exemplary compositions for material 25 a are as follows:
- compositions also include stabilizers that are well known in the chemical art to increase the operational life, as well as initiators. Further, to reduce distortions in the features of imprinting layer 24 due to shrinkage of material 25 a during curing, e.g., exposure to actinic radiation such as ultraviolet radiation, silicon nano-balls may be added to the material 25 a either before patterning, e.g., before application of beads 25 to surface 12 , or after application of beads 25 to surface 12 .
- surface 14 a may be treated with a modifying agent.
- a modifying agent is a release layer (not shown) formed from a fluorocarbon silylating agent.
- the release layer and other surface modifying agents may be applied using any known process. For example, processing techniques that may include chemical vapor deposition method, physical vapor deposition, atomic layer deposition or various other techniques, brazing and the like.
- imprinting layer 24 is located between substrate 10 and release layer (not shown), during imprint lithography processes.
- Planarization layer 125 functions to present a planar surface 125 a to imprinting layer 124 , shown more clearly in FIG. 11.
- planarization layer 125 may be formed from a number of differing materials, such as, for example, thermoset polymers, thermoplastic polymers, polyepoxies, polyamides, polyurethanes, polycarbonates, polyesters, and combinations thereof.
- planarization layer 125 is formed from an aromatic material so as to possess a continuous, smooth, relatively defect-free surface that may exhibit excellent adhesion to the imprinting layer 124 .
- surface 125 a presents a planar region upon which imprinting layer 124 may be disposed and recesses 331 , 341 , 351 and 361 are formed.
- Planarization layer 125 may be disposed on substrate 110 using any known deposition technique. In the present example, planarization layer 125 is disposed on substrate 110 using spin-on techniques. However, it was discovered that during etching, that the difference in height between nadirs 330 a and 360 a from surface 112 , shown as h 3 and h 4 , respectively, results in differing etch characteristics of vias formed into substrate 110 , for the reasons discussed above. The height differential between surface nadir 330 a and nadir 360 a is defined as follows:
- the features in imprinting layer 124 such as sub-portions 224 a are transferred into both planarization layer 125 and substrate 110 , forming sub-portions 225 a. Spaced apart between sub-portions 225 a are vias 431 , 441 , 451 and 461 . Due to height differential ⁇ h′ anisotropic etching occurs that distorts the features transferred into substrate 110 from imprinting layer 124 , as discussed above. To avoid the problems presented by the height differential ⁇ h′ the solutions described above may apply with equal weight here.
- planarization layer 125 may be formulated to compensate for the anisotropicity of the etch that occurs due to the height differential, ⁇ h, defined by equation 1. As a result, planarization layer may be employed to reduce, if not overcome, the deleterious effects of the height differential, ⁇ h, defined by equation 1.
Abstract
Description
- The field of invention relates generally to imprint lithography. More particularly, the present invention is directed to forming layers on a substrate to facilitate fabrication of high resolution patterning features suited for use as metrology standards.
- Metrology standards are employed in many industries to measure the operation of varying equipment and processes. For semiconductor processes, a typical metrology standard may include grating structures, L-shaped structures and other common patterning geometries found on production devices. In this manner, the metrology standards facilitate measurement of the performance of the processing equipment.
- Conventional metrology standards are manufactured from a variety of conventional processes, such as e-beam lithography, optical lithography, and using various materials. Exemplary materials include insulative, conductive or semiconductive materials. After formation of the metrology standards using conventional processes, a post process characterization technique is employed to measure the accuracy of the metrology features. This is due, in part, to the difficulty in repeatably producing reliable accurate metrology standards. A drawback with the conventional processes for manufacturing metrology standards is that the post process characterization step is time consuming. In addition, the difficulty in repeatably producing reliable metrology standards results in a low yield rate. A processing technique that may prove beneficial in overcoming the drawbacks of the conventional processes for fabricating metrology standards is known as imprint lithography.
- An exemplary imprint lithography process is disclosed in U.S. Pat. No. 6,334,960 to Willson et al. Willson et al. disclose a method of forming a relief image in a structure. The method includes providing a substrate having a planarization layer. The planarization layer is covered with a polymerizable fluid composition. A mold makes mechanical contact with the polymerizable fluid. The mold includes a relief structure, and the polymerizable fluid composition fills the relief structure. The polymerizable fluid composition is then subjected to conditions to solidify and polymerize the same, forming a solidified polymeric material on the planarization layer that contains a relief structure complimentary to that of the mold. The mold is then separated from the solid polymeric material such that a replica of the relief structure in the mold is formed in the solidified polymeric material. The planarization layer and the solidified polymeric material are subjected to an environment to selectively etch the planarization layer relative to the solidified polymeric material such that a relief image is formed in the planarization layer. Advantages with this imprint lithography process are that it affords fabrication of structures with minimum feature dimensions that are far smaller than is provided employing standard semiconductor process techniques.
- It is desired, therefore, to provide a method for reliably producing precision features on a substrate for use as metrology standards.
- The present invention is directed to a method of forming a layer on a solidified portion of a substrate that facilitates fabrication of metrology standards. The method features defining a planarity of the layer, which is formed by creating a flowable region on the solidified portion of the substrate, as a function of the volume of the flowable material in the region. Recognizing that the topology of a substrate upon which the layer is formed is not planar, on the nano-scale, the present invention is directed to fabricating high resolution features on the substrate and transferring the features into a solidified region of the substrate. Specifically, by minimization of the layer thickness while maximizing the planarity of the interface of the layer with the solidified portion of the substrate, it was found that very small features may be precisely and repeatably formed in the substrate. To that end, the method includes creating a flowable region on the substrate. The flowable region has a volume associated therewith. Thereafter, a layer is defined in the flowable region to have opposed sides and an area associated therewith. One of the opposed sides faces the substrate, defining an interface thereat. The remaining side faces away from the substrate, and the layer has a thickness measured between the opposed sides. The volume is selected to maximize the planarity of the interface over the area. Specifically, for a given layer thickness, e.g., 10 nanometers, the volume of the flowable region determines the area of the substrate to be covered by the layer that maximizes the planarity of the interface.
- In another embodiment, the flowable region is formed from a bead of polymerizable liquid to form the layer using imprint lithography. To that end, another method in accordance with the present invention includes depositing a bead of polymerizable liquid upon the substrate. The bead has a volume associated therewith and is spread over an area of the substrate by contacting the bead with a mold. The mold has a plurality of relief structures, defined by multiple recessions and protrusions, formed into the mold surface. The contact with the mold defines a layer having first and second opposed sides. The first side faces the substrate and has a planarity associated therewith. The second side faces away from the substrate and has a plurality of recesses therein. Each of the recesses has a nadir. The thickness of the layer is measured between the first side and a plane that is coplanar with each nadir associated with the plurality of recesses. The planarity is defined by the volume. Thereafter, the layer is subjected to conditions to polymerize the polymerizable material, forming a polymerized layer. Thereafter, subsequent processes, such as etching may or may not occur. These and other embodiments are described more fully below.
- FIG. 1 is a simplified elevation view of a lithographic system in accordance with the present invention;
- FIG. 2 is a simplified representation of material from which an imprinting layer, shown in FIG. 1, is comprised before being polymerized and cross-linked;
- FIG. 3 is a simplified representation of cross-linked polymer material into which the material shown in FIG. 2 is transformed after being subjected to radiation;
- FIG. 4 is a simplified elevation view of the mold spaced-apart from the imprinting layer, shown in FIG. 1, after patterning of the imprinting layer;
- FIG. 5 is a detailed view of the imprinting layer shown in FIG. 4 demonstrating the non-planarity of substrate;
- FIG. 6 is a detailed view of the imprinting layer shown in FIG. 5 showing the transfer of the features in the imprinting layer into the substrate during an etching process;
- FIG. 7 is a detailed view of the substrate shown in FIG. 6 after completion of the etch process that transfers features of the imprinting layer into the substrate;
- FIG. 8 is a perspective view of the substrate shown in FIGS.1-7;
- FIG. 9 is a detailed view of a mold shown in FIG. 1, in accordance with one embodiment of the present invention;
- FIG. 10 is a detailed view of the imprinting layer shown in FIG. 4 using a planarization layer to overcome the non-planarity of the substrate, in accordance with a second embodiment of the present invention;
- FIG. 11 is plan view of the substrate shown in FIG. 10, with a patterned imprinting layer being present; and
- FIG. 12 is a plan view of the substrate shown in FIG. 11 after etching of the pattern into planarization layer.
- Referring to FIG. 1, a lithographic system in accordance with an embodiment of the present invention includes a
substrate 10, having a substantially planar region shown assurface 12. Disposedopposite substrate 10 is an imprint device, such as amold 14, having a plurality of features thereon, forming a plurality of spaced-apart recessions 16 andprotrusions 18. In the present embodiment,recessions 16 are a plurality of grooves extending along a direction parallel toprotrusions 18 that provide a cross-section ofmold 14 with a shape of a battlement. However,recessions 16 may correspond to virtually any feature required to create an integrated circuit. Atranslation device 20 is connected betweenmold 14 andsubstrate 10 to vary a distance “d” betweenmold 14 andsubstrate 10. Aradiation source 22 is located so thatmold 14 is positioned betweenradiation source 22 andsubstrate 10.Radiation source 22 is configured to impinge radiation onsubstrate 10. To realize this,mold 14 is fabricated from material that allows it to be substantially transparent to the radiation produced byradiation source 22. - Referring to both FIGS. 1 and 2, a flowable region, such as an
imprinting layer 24, is disposed formed onsurface 12. Flowable region may be formed using any known technique such as a hot embossing process disclosed in U.S. Pat. No. 5,772,905, which is incorporated by reference in its entirety herein, or a laser assisted direct imprinting (LADI) process of the type described by Chou et al. in Ultrafast and Direct Imprint of Nanostructures in Silicon, Nature, Col. 417, pp. 835-837, June 2002. In the present embodiment, however, flowable region is formed using imprint lithography. Specifically, flowable region consists ofimprinting layer 24 deposited as a plurality of spaced-apartdiscrete beads 25 ofmaterial 25 a onsubstrate 10, discussed more fully below. Imprintinglayer 24 is formed from a material 25 a that may be selectively polymerized and cross-linked to record a desired pattern.Material 25 a is shown in FIG. 3 as being cross-linked atpoints 25 b, formingcross-linked polymer material 25 c. - Referring to FIGS. 1, 2 and4, the pattern recorded by imprinting
layer 24 is produced, in part, by mechanical contact withmold 14. To that end,translation device 20 reduces the distance “d” to allowimprinting layer 24 to come into mechanical contact withmold 14, spreadingbeads 25 so as to form imprintinglayer 24 with a contiguous formation ofmaterial 25 a oversurface 12. In one embodiment, distance “d” is reduced to allow sub-portions 24 a ofimprinting layer 24 to ingress into and fillrecessions 16. - To facilitate filling of
recessions 16,material 25 a is provided with the requisite properties to completely fill recessions while coveringsurface 12 with a contiguous formation ofmaterial 25 a. In the present embodiment, sub-portions 24 a ofimprinting layer 24 in superimposition withprotrusions 18 remain after the desired, usually minimum distance “d”, has been reached, leaving sub-portions 24 a with a thickness t1, and sub-portions 24 b with a thickness, t2. Thicknesses “t1” and “t2” may be any thickness desired, dependent upon the application. Typically, t1, is selected so as to be no greater than twice width u of sub-portions 24 a, i.e., t1≦2u. - Referring to FIGS. 1, 2 and3, after a desired distance “d” has been reached,
radiation source 22 produces actinic radiation that polymerizes andcross-links material 25 a, formingcross-linked polymer material 25 c. As a result, the composition ofimprinting layer 24 transforms frommaterial 25 a tomaterial 25 c, which is a solid. Specifically,material 25 c is solidified to provide side 24 c ofimprinting layer 24 with a shape conforming to a shape of asurface 14 a ofmold 14, shown more clearly in FIG. 4. - Referring to FIGS. 1, 2 and3 an
exemplary radiation source 22 may produce ultraviolet radiation. Other radiation sources may be employed, such as thermal, electromagnetic and the like. The selection of radiation employed to initiate the polymerization of the material inimprinting layer 24 is known to one skilled in the art and typically depends on the specific application which is desired. After imprintinglayer 24 is transformed to consist ofmaterial 25 c,translation device 20 increases the distance “d” so thatmold 14 andimprinting layer 24 are spaced-apart. - Referring to FIG. 4, additional processing may be employed to complete the patterning of
substrate 10. For example,substrate 10 andimprinting layer 24 may be etched to increase the aspect ratio ofrecesses 30 inimprinting layer 24. To facilitate etching, the material from whichimprinting layer 24 is formed may be varied to define a relative etch rate with respect tosubstrate 10, as desired. The relative etch rate ofimprinting layer 24 tosubstrate 10 may be in a range of about 1.5:1 to about 100:1. Alternatively, or in addition to,imprinting layer 24 may be provided with an etch differential with respect to photo-resist material (not shown) selectively disposed on side 24 c. The photoresist material (not shown) may be provided to furtherpattern imprinting layer 24, using known techniques. Any etch process may be employed, dependent upon the etch rate desired and the underlying constituents that formsubstrate 10 andimprinting layer 24. Exemplary etch processes may include plasma etching, reactive ion etching, chemical wet etching and the like. - Referring to FIG. 5, a problem addressed by the present invention concerns formation of features on substrates having extreme topologies when compared to the dimensions of features formed thereon. As a result,
substrate 10 appears to present anon-planar surface 12. This has been traditionally found in substrates formed from gallium arsenide (GAs) or indium phosphide (InP). However, as the feature dimensions decrease substrates that have historically been considered planar may present a non-planar surface to features formed thereon. For example,substrate 10 is shown with variations in surface height. The variation in height frustrates attempts to control the dimensions of features formed intosubstrate 10, because of the resulting differences in distances between nadirs 130 a and 160 a fromsurface 12, shown as h1 and h2, respectively. The height differential, Δh, between surface nadir 130 a and nadir 160 a is defined as follows: - Δh=|h 1 −h 2| (1)
- Height differential, Δh, results in differing etch characteristics of vias formed into
substrate 10, discussed more fully below with respect to FIGS. 6 and 7. - Referring to FIGS. 5, 6 and7, transfer of the features, such as
recesses imprinting layer 24 intosubstrate 10 occurs through etch processes. The height differential, Δh, results during formation of via 261 insubstrate 10 before formation of the remaining vias, which will be formed in regions ofsubstrate 10 in superimposition withrecesses substrate 10 is etched during formation of vias. Specifically, nadir 160 areaches surface 12 ofsubstrate 10 before the remaining nadirs 130 a, 140 a and 150 a. As a result an etch differential occurs, i.e., the etch process to whichsubstrate 10 is exposed to form vias therein differs oversubstrate surface 12. The etch differential is problematic, because it results in anisotropic etching that distorts the features transferred intosubstrate 10 from imprintinglayer 24. The distortion presents, inter alia, by variations in width w3 betweenvias substrate 10. - Ideally, the width of
recesses vias 251 and 261 being greater than w1, as well as larger than w3 ofvias 231 and 241. The difference between the widths w3 ofvias vias 231 and 251. - Referring to both FIGS. 4, 6,7 and 8, to avoid these drawbacks, the present invention seeks to minimize the height differential Δh by minimizing layer thickness t2 and selecting a region of
substrate 10 upon which to locate and define area, A, so as to maximize the planarity of area A. Optimized production yield favors maximization of area A. However, it was determined that the smaller area, A, is made, the greater the planarity ofsubstrate surface 12 in area, A. In short, minimization of area, A, maximizes the planarity of the same. Thus, attempts to obtain large production yields, appears to be in conflict with maximizing the planarity of area, A, because maximizing the area A reduces the planarity ofsurface 12 associated with area, A. - The manufacture of metrology standards, however, does not require large yields. Therefore, in the present embodiment of the invention, the location and size of area, A, is chosen to maximize the planarity of
surface 12 in area, A ofsurface 12 over which vias 231, 241, 251 and 261 are formed. It is believed that by appropriately selecting area, A, over which vias 231, 241, 251 and 261 are formed, it will be possible to deposit animprinting layer 24 of sufficiently small thickness t2 while minimizing height differential Δh, if not abrogating the height differential Δh entirely. This provides greater control over the dimensions ofrecesses imprinting layer 24, thereby affording the fabrication of features on the order of a few nanometers. - Referring to FIGS. 1, 4 and8, to that end, the minimum layer thickness was chosen to avoid visco-elastic behavior of the liquid in
beads 25. It is believed that visco-elastic behavior makes difficult controlling the imprinting process. For example, the visco-elastic behavior defines a minimum thickness thatlayer 24 may reach, after which fluid properties, such as flow, cease. This may present by bulges in nadirs 130 a, 140 a, 150 a and 160 a as well as other problematic characteristics. In the present embodiment it was determined that providingimprinting layer 24 with a minimum thickness t2 of no less than approximately 10 nanometers satisfied this criteria, i.e., it was the minimum thickness that could be achieved while preventingimprinting layer 24 from demonstrating visco-elastic behavior. Assuming a uniform thickness, t2, overlayer 24, e.g., sub-portions 24 a and recesses 131, 141, 151 and 161 not being present so that side 24 c is planar it was determined that the volume of liquid inbeads 25 may define the planarity of side 24 d that forms an interface withsurface 12 and is disposed opposite to side 24 c. The volume is typically selected to maximize the planarity of side 24 d, which forms an interface withsurface 12. With a priori knowledge of the topology ofsurface 12, the size and locus of area, A, may be chosen to maximize planarity over area A. Knowing A and the desired layer thickness t2, the volume, V, may be derived from the following relationship: - V=At2 (2)
- However, with the presence of features, such as sub-portions24 a and recesses 131, 141, 151 and 161, results in
layer 24 having a varying thickness over area, A. Thus, equation (2) is modified to take into consideration volumetric changes required due to the varying thickness oflayer 24 over area, A. Specifically, the volume, V, is chosen so as to minimize thickness t2, while avoiding visco-elastic behavior and providing the requisite quantity of liquid to include features, such as sub-portions 24 a of thickness t1, andrecess layer 24. As a result, in accordance with this embodiment of the invention, the volume, V, of liquid inbeads 25 may be defined as follows: - V=A(t 2 +ft 1) (3)
- where f is the fill factor and A, t2 and t1 are as defined above.
- Referring to FIGS. 1, 4,7, 8 and 9, further control of the dimensions of features formed into
substrate 10 may be achieved by proper placement and selection ofrecessions 16 andprotrusions 18 oversurface 14 a. Specifically, the arrangement ofrecessions 16 andprotrusions 18 onmold 14 may be designed to define a uniform fill factor overmold surface 14 a. As a result, the size of etch areas will be substantially equal to the size of non-etch areas ofsubstrate 10 in area A, where features onmold surface 14 a are imprinted. This arrangement of features reduces, if not avoids, variations inimprinting layer 24 thickness by minimizing pattern density variations. By avoiding thickness variations inimprinting layer 24, distortions caused by the transfer of features intosubstrate 10 during etch processes are reduced, if not avoided. Additional control can be obtained by having therecessions 16 andprotrusions 18 formed to be periodic oversurface 14 a ofmold 14. As a result, the features transferred toimprinting layer 24 and subsequently etched into area A, i.e., vias 231, 241, 251 and 261, fully populate and are periodic in area A. - It should be noted that
mold surface 14 a may be formed with uniform period features having common shapes, as well as having differing shapes, as shown. Further,recessions 16 andprotrusions 18 may be arranged onmold 14 to form virtually any desired geometric pattern. Exemplary patterns include a series of linear grooves/projections 80, a series of L-Shaped grooves/projections 82, a series of intersecting grooves/projections defining amatrix 84, and a series of arcuate grooves/projections 86. Additionally,pillars 88 may project frommold 14 and have any cross-sectional shape desired, e.g., circular, polygonal etc. - Additionally, it is desired not to employ features as part of the metrology standards that are located proximate to the edge of
imprinting layer 24 and, therefore, area A. These features become distorted when transferred intosubstrate 10 during etching. The distortion is produced by edge-effects due to microloading, thereby exacerbating control of the feature dimensions. - Referring to FIGS. 7 and 8, in another embodiment of the present invention, further control of formation of
vias substrate 10 to ensure that sidewalls 231 a, 241 a, 251 a and 261 a are orientated to be substantially parallel to one of the crystal planes of the material from which thesubstrate 10 is formed. For example,substrate 10 may be fabricated so that the sidewalls 231 a, 241 a, 251 a and 261 a extend parallel to either of the 100, 010 or the 110 planes. This facilitates more precise control of the width w3 ofvias imprinting layer 24 are transferred intosubstrate 10 using wet etch chemistries. - Referring to FIG. 1 in accordance with another embodiment of the present invention, to further provide greater control of the feature dimensions in imprinting layers24, it has been found that the force {overscore (F)} applied by
mold 14 should be deminimis and only sufficient magnitude to facilitate contact withbeads 25. The spreading of liquid inbeads 25 should be attributable primarily through capillary action withmold surface 14 a. - Referring to FIGS. 1, 2 and4, the characteristics of
material 25 a are important to efficientlypattern substrate 10 in light of the unique deposition process that is in accordance with the present invention. As mentioned above,material 25 a is deposited onsubstrate 10 as a plurality of discrete and spaced-apartbeads 25. The combined volume ofbeads 25 is such that the material 25 a is distributed appropriately over area ofsurface 12 whereimprinting layer 24 is to be formed. As a result,imprinting layer 24 is spread and patterned concurrently, with the pattern being subsequently set by exposure to radiation, such as ultraviolet radiation. It is desired, therefore, that material 25 a has certain characteristics to facilitate even spreading ofmaterial 25 a inbeads 25 oversurface 12 so that the all thicknesses t1 are substantially uniform and all thickness t2 are substantially uniform and all widths, w1, are substantially uniform. The desirable characteristics include having a suitable viscosity to demonstrate satisfaction with these characteristics, as well as the ability to wet surface ofsubstrate 10 and avoid subsequent pit or hole formation after polymerization. To that end, in one example, the wettability ofimprinting layer 24, as defined by the contact angle method, should be such that the angle, θ1, is defined as follows: - 0>θ1<75° (4)
- With these two characteristics being satisfied, imprinting
layer 24 may be made sufficiently thin while avoiding formation of pits or holes in the thinner regions ofimprinting layer 24. - Referring to FIGS. 2, 3,4 and 5, another desirable characteristic that it is desired for
material 25 a to possess is thermal stability such that the variation in an angle Φ, measured between a nadir 30 a of arecess 30 and a sidewall 30 b thereof, does not vary more than 10% after being heated to 75° C. for thirty (30) minutes. Additionally,material 25 a should transform tomaterial 25 c, i.e., polymerize and cross-link, when subjected to a pulse of radiation containing less than 5 J cm−2. In the present example, polymerization and cross-linking was determined by analyzing the infrared absorption of the “C═C” bond contained inmaterial 25 a. Additionally, it is desired thatsubstrate surface 12 be relatively inert towardmaterial 25 a, such that less than 500 nm ofsurface 12 be dissolved as a result sixty (60) seconds of contact withmaterial 25 a. It is further desired that the wetting ofmold 14 by imprintinglayer 24 be minimized, i.e., wetting angle, θ2, be should be of requisite magnitude. To that end, the wetting angle, θ2, should be greater than 75°. - The constituent components that form material25 a to provide the aforementioned characteristics may differ. This results from
substrate 10 being formed from a number of different materials. As a result, the chemical composition ofsurface 12 varies dependent upon the material from whichsubstrate 10 is formed. For example,substrate 10 may be formed from silicon, plastics, gallium arsenide, mercury telluride, and composites thereof. Additionally,substrate 10 may include one or more layers in region, e.g., dielectric layer, metal layers, semiconductor layer and the like. - Referring to FIGS. 2 and 3, in one embodiment of the present invention, the constituent components of
material 25 a consist of acrylated monomers or methacrylated monomers that are not silyated, a cross-linking agent, and an initiator. The non-silyated acryl or methacryl monomers are selected to providematerial 25 a with a minimal viscosity, e.g., viscosity approximating the viscosity of water (1-2 cps) or less. However, it has been determined that the speed of imprinting may be sacrificed in favor of higher accuracy in feature dimensions. As a result, a much higher viscosity material may be employed. As a result the range of viscosity that may be employed is from 1 to 1,000 centipoise or greater. The cross-linking agent is included to cross-link the molecules of the non-silyated monomers, providingmaterial 25 a with the properties to record a pattern thereon having very small feature sizes, on the order of a few nanometers and to provide the aforementioned thermal stability for further processing. To that end, the initiator is provided to produce a free radical reaction in response to radiation, causing the non-silyated monomers and the cross-linking agent to polymerize and cross-link, forming across-linked polymer material 25 c. In the present example, a photo-initiator responsive to ultraviolet radiation is employed. In addition, if desired, a silyated monomer may also be included inmaterial 25 a to control the etch rate of the resultingcross-linked polymer material 25 c, without substantially affecting the viscosity ofmaterial 25 a. - Examples of non-silyated monomers include, but are not limited to, butyl acrylate, methyl acrylate, methyl methacrylate, or mixtures thereof. The non-silyated monomer may make up approximately 25% to 60% by weight of
material 25 a. It is believed that the monomer provides adhesion to an underlying organic transfer layer, discussed more fully below. - The cross-linking agent is a monomer that includes two or more polymerizable groups. In one embodiment, polyfunctional siloxane derivatives may be used as a cross-linking agent. An example of a polyfunctional siloxane derivative is 1,3-bis(3-methacryloxypropyl)-tetramethyl disiloxane. Another suitable cross-linking agent consists of ethylene diol diacrylate. The cross-linking agent may be present in
material 25 a in amounts of up to 20% by weight, but is more typically present in an amount of 5% to 15% by weight. - The initiator may be any component that initiates a free radical reaction in response to radiation, produced by
radiation source 22, shown in FIG. 1, impinging thereupon and being absorbed thereby. Suitable initiators may include, but are not limited to, photo-initiators such as 1-hydroxycyclohexyl phenyl ketone or phenylbis(2,4,6-trimethyl benzoyl) phosphine oxide. The initiator may be present inmaterial 25 a in amounts of up to 5% by weight, but is typically present in an amount of 1% to 4% by weight. - Were it desired to include silylated monomers in
material 25 a, suitable silylated monomers may include, but are not limited to, silyl-acryloxy and silyl methacryloxy derivatives. Specific examples are methacryloxypropyl tris(tri-methylsiloxy)silane and (3-acryloxypropyl)tris(tri-methoxysiloxy)-silane. Silylated monomers may be present inmaterial 25 a in amounts from 25% to 50% by weight. The curable liquid may also include a dimethyl siloxane derivative. Examples of dimethyl siloxane derivatives include, but are not limited to, (acryloxypropyl) methylsiloxane dimethylsiloxane copolymer. - Referring to both FIGS. 1 and 2, exemplary compositions for
material 25 a are as follows: - The above-identified compositions also include stabilizers that are well known in the chemical art to increase the operational life, as well as initiators. Further, to reduce distortions in the features of
imprinting layer 24 due to shrinkage ofmaterial 25 a during curing, e.g., exposure to actinic radiation such as ultraviolet radiation, silicon nano-balls may be added to the material 25 a either before patterning, e.g., before application ofbeads 25 to surface 12, or after application ofbeads 25 to surface 12. - Referring to FIGS. 1, 2 and3, additionally, to ensure that
imprinting layer 24 does not adhere to mold 14,surface 14 a may be treated with a modifying agent. One such modifying agent is a release layer (not shown) formed from a fluorocarbon silylating agent. The release layer and other surface modifying agents, may be applied using any known process. For example, processing techniques that may include chemical vapor deposition method, physical vapor deposition, atomic layer deposition or various other techniques, brazing and the like. In this configuration,imprinting layer 24 is located betweensubstrate 10 and release layer (not shown), during imprint lithography processes. - Referring to FIGS. 4 and 10, in some cases the non-planar topology of
substrate 110 may frustrate deposition of animprinting layer 24. This may be overcome by the use of aplanarization layer 125.Planarization layer 125 functions to present a planar surface 125 a toimprinting layer 124, shown more clearly in FIG. 11. - Referring to both FIGS. 10 and 11,
planarization layer 125 may be formed from a number of differing materials, such as, for example, thermoset polymers, thermoplastic polymers, polyepoxies, polyamides, polyurethanes, polycarbonates, polyesters, and combinations thereof. In the present example,planarization layer 125 is formed from an aromatic material so as to possess a continuous, smooth, relatively defect-free surface that may exhibit excellent adhesion to theimprinting layer 124. Specifically, surface 125 a presents a planar region upon whichimprinting layer 124 may be disposed and recesses 331, 341, 351 and 361 are formed. -
Planarization layer 125 may be disposed onsubstrate 110 using any known deposition technique. In the present example,planarization layer 125 is disposed onsubstrate 110 using spin-on techniques. However, it was discovered that during etching, that the difference in height between nadirs 330 a and 360 a fromsurface 112, shown as h3 and h4, respectively, results in differing etch characteristics of vias formed intosubstrate 110, for the reasons discussed above. The height differential between surface nadir 330 a and nadir 360 a is defined as follows: - Δh′=|h 3 −h 4| (5)
- Referring to both FIGS. 11 and 12, during the etching process, the features in
imprinting layer 124, such as sub-portions 224 a are transferred into bothplanarization layer 125 andsubstrate 110, forming sub-portions 225 a. Spaced apart between sub-portions 225 a are vias 431, 441, 451 and 461. Due to height differential Δh′ anisotropic etching occurs that distorts the features transferred intosubstrate 110 fromimprinting layer 124, as discussed above. To avoid the problems presented by the height differential Δh′ the solutions described above may apply with equal weight here. An additional advantage with providingplanarization layer 125 is that it may be formulated to compensate for the anisotropicity of the etch that occurs due to the height differential, Δh, defined by equation 1. As a result, planarization layer may be employed to reduce, if not overcome, the deleterious effects of the height differential, Δh, defined by equation 1. - The embodiments of the present invention described above are exemplary. Many changes and modifications may be made to the disclosure recited above, while remaining within the scope of the invention. For example, as mentioned above, many of the embodiments discussed above may be implemented in existing imprint lithography processes that do not employ formation of an imprinting layer by deposition of beads of polymerizable material. Exemplary processes in which differing embodiments of the present invention may be employed include a hot embossing process disclosed in U.S. Pat. No. 5,772,905, which is incorporated by reference in its entirety herein. Additionally, many of the embodiments of the present invention may be employed using a laser assisted direct imprinting (LADI) process of the type described by Chou et al. inUltrafast and Direct Imprint of Nanostructures in Silicon, Nature, Col. 417, pp. 835-837, June 2002. Therefore, the scope of the invention should be determined not with reference to the above description, but instead should be determined with reference to the appended claims along with their full scope of equivalents.
Claims (20)
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Cited By (132)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030235787A1 (en) * | 2002-06-24 | 2003-12-25 | Watts Michael P.C. | Low viscosity high resolution patterning material |
US20040116548A1 (en) * | 2002-12-12 | 2004-06-17 | Molecular Imprints, Inc. | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US20040112862A1 (en) * | 2002-12-12 | 2004-06-17 | Molecular Imprints, Inc. | Planarization composition and method of patterning a substrate using the same |
US20040124566A1 (en) * | 2002-07-11 | 2004-07-01 | Sreenivasan Sidlgata V. | Step and repeat imprint lithography processes |
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US20050192421A1 (en) * | 2004-02-27 | 2005-09-01 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
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US20060035464A1 (en) * | 2004-08-13 | 2006-02-16 | Molecular Imprints, Inc. | Method of planarizing a semiconductor substrate |
US20060035029A1 (en) * | 2004-08-16 | 2006-02-16 | Molecular Imprints, Inc. | Method to provide a layer with uniform etch characteristics |
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US20060081557A1 (en) * | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
US20060111454A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
US20060108710A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Method to reduce adhesion between a conformable region and a mold |
US20060113697A1 (en) * | 2004-12-01 | 2006-06-01 | Molecular Imprints, Inc. | Eliminating printability of sub-resolution defects in imprint lithography |
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US7122482B2 (en) | 2003-10-27 | 2006-10-17 | Molecular Imprints, Inc. | Methods for fabricating patterned features utilizing imprint lithography |
US20070017631A1 (en) * | 2005-07-22 | 2007-01-25 | Molecular Imprints, Inc. | Method for adhering materials together |
US20070021520A1 (en) * | 2005-07-22 | 2007-01-25 | Molecular Imprints, Inc. | Composition for adhering materials together |
US20070126156A1 (en) * | 2005-12-01 | 2007-06-07 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
US20070126150A1 (en) * | 2005-12-01 | 2007-06-07 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
WO2007067488A2 (en) | 2005-12-08 | 2007-06-14 | Molecular Imprints, Inc. | Method and system for double-sided patterning of substrates |
US7244386B2 (en) | 2004-09-27 | 2007-07-17 | Molecular Imprints, Inc. | Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom |
US20070170617A1 (en) * | 2006-01-20 | 2007-07-26 | Molecular Imprints, Inc. | Patterning Substrates Employing Multiple Chucks |
US20070212494A1 (en) * | 2005-07-22 | 2007-09-13 | Molecular Imprints, Inc. | Method for Imprint Lithography Utilizing an Adhesion Primer Layer |
US20070228610A1 (en) * | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks |
US20070243655A1 (en) * | 2006-04-18 | 2007-10-18 | Molecular Imprints, Inc. | Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features |
US20070264481A1 (en) * | 2003-12-19 | 2007-11-15 | Desimone Joseph M | Isolated and fixed micro and nano structures and methods thereof |
US20070275193A1 (en) * | 2004-02-13 | 2007-11-29 | Desimone Joseph M | Functional Materials and Novel Methods for the Fabrication of Microfluidic Devices |
US20070287081A1 (en) * | 2004-06-03 | 2007-12-13 | Molecular Imprints, Inc. | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
US20080110557A1 (en) * | 2006-11-15 | 2008-05-15 | Molecular Imprints, Inc. | Methods and Compositions for Providing Preferential Adhesion and Release of Adjacent Surfaces |
US20080181958A1 (en) * | 2006-06-19 | 2008-07-31 | Rothrock Ginger D | Nanoparticle fabrication methods, systems, and materials |
US20080308971A1 (en) * | 2007-06-18 | 2008-12-18 | Molecular Imprints, Inc. | Solvent-Assisted Layer Formation for Imprint Lithography |
US20090004319A1 (en) * | 2007-05-30 | 2009-01-01 | Molecular Imprints, Inc. | Template Having a Silicon Nitride, Silicon Carbide or Silicon Oxynitride Film |
US7472576B1 (en) | 2004-11-17 | 2009-01-06 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University | Nanometrology device standards for scanning probe microscopes and processes for their fabrication and use |
US20090028910A1 (en) * | 2003-12-19 | 2009-01-29 | University Of North Carolina At Chapel Hill | Methods for Fabrication Isolated Micro-and Nano-Structures Using Soft or Imprint Lithography |
US20090026657A1 (en) * | 2007-07-20 | 2009-01-29 | Molecular Imprints, Inc. | Alignment System and Method for a Substrate in a Nano-Imprint Process |
US20090027603A1 (en) * | 2005-02-03 | 2009-01-29 | Samulski Edward T | Low Surface Energy Polymeric Material for Use in Liquid Crystal Displays |
US20090035934A1 (en) * | 2007-07-31 | 2009-02-05 | Molecular Imprints, Inc. | Self-Aligned Cross-Point Memory Fabrication |
US20090053535A1 (en) * | 2007-08-24 | 2009-02-26 | Molecular Imprints, Inc. | Reduced Residual Formation in Etched Multi-Layer Stacks |
US20090130598A1 (en) * | 2007-11-21 | 2009-05-21 | Molecular Imprints, Inc. | Method of Creating a Template Employing a Lift-Off Process |
US20090136654A1 (en) * | 2005-10-05 | 2009-05-28 | Molecular Imprints, Inc. | Contact Angle Attenuations on Multiple Surfaces |
US20090133751A1 (en) * | 2007-11-28 | 2009-05-28 | Molecular Imprints, Inc. | Nanostructured Organic Solar Cells |
US20090140458A1 (en) * | 2007-11-21 | 2009-06-04 | Molecular Imprints, Inc. | Porous template and imprinting stack for nano-imprint lithography |
US20090147237A1 (en) * | 2007-12-05 | 2009-06-11 | Molecular Imprints, Inc. | Spatial Phase Feature Location |
WO2009073200A1 (en) | 2007-12-04 | 2009-06-11 | Molecular Imprints, Inc. | High throughput imprint based on contact line motion tracking control |
US20090165320A1 (en) * | 2003-09-23 | 2009-07-02 | Desimone Joseph M | Photocurable perfluoropolyethers for use as novel materials in microfluidic devices |
US20090200710A1 (en) * | 2008-02-08 | 2009-08-13 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
US20090250840A1 (en) * | 2006-04-18 | 2009-10-08 | Molecular Imprints, Inc. | Template Having Alignment Marks Formed of Contrast Material |
US20090304992A1 (en) * | 2005-08-08 | 2009-12-10 | Desimone Joseph M | Micro and Nano-Structure Metrology |
EP2146369A2 (en) | 2004-09-21 | 2010-01-20 | Molecular Imprints, Inc. | Method of forming an in-situ recessed structure |
US20100072671A1 (en) * | 2008-09-25 | 2010-03-25 | Molecular Imprints, Inc. | Nano-imprint lithography template fabrication and treatment |
US20100084376A1 (en) * | 2008-10-02 | 2010-04-08 | Molecular Imprints, Inc. | Nano-imprint lithography templates |
US20100090341A1 (en) * | 2008-10-14 | 2010-04-15 | Molecular Imprints, Inc. | Nano-patterned active layers formed by nano-imprint lithography |
US20100098848A1 (en) * | 2008-10-22 | 2010-04-22 | Molecular Imprints, Inc. | Fluid Dispense Device Calibration |
US20100096776A1 (en) * | 2008-10-21 | 2010-04-22 | Molecular Imprints, Inc. | Reduction of Stress During Template Separation |
US20100098940A1 (en) * | 2008-10-20 | 2010-04-22 | Molecular Imprints, Inc. | Nano-Imprint Lithography Stack with Enhanced Adhesion Between Silicon-Containing and Non-Silicon Containing Layers |
US20100095862A1 (en) * | 2008-10-22 | 2010-04-22 | Molecular Imprints, Inc. | Double Sidewall Angle Nano-Imprint Template |
US20100102469A1 (en) * | 2008-10-24 | 2010-04-29 | Molecular Imprints, Inc. | Strain and Kinetics Control During Separation Phase of Imprint Process |
WO2010047788A2 (en) | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Imprint lithography system and method |
US20100104852A1 (en) * | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Fabrication of High-Throughput Nano-Imprint Lithography Templates |
US20100109205A1 (en) * | 2008-11-04 | 2010-05-06 | Molecular Imprints, Inc. | Photocatalytic reactions in nano-imprint lithography processes |
US20100109195A1 (en) * | 2008-11-05 | 2010-05-06 | Molecular Imprints, Inc. | Release agent partition control in imprint lithography |
US20100112220A1 (en) * | 2008-11-03 | 2010-05-06 | Molecular Imprints, Inc. | Dispense system set-up and characterization |
US20100112236A1 (en) * | 2008-10-30 | 2010-05-06 | Molecular Imprints, Inc. | Facilitating Adhesion Between Substrate and Patterned Layer |
US20100151031A1 (en) * | 2007-03-23 | 2010-06-17 | Desimone Joseph M | Discrete size and shape specific organic nanoparticles designed to elicit an immune response |
US7802978B2 (en) | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
WO2010147671A1 (en) | 2009-06-19 | 2010-12-23 | Molecular Imprints, Inc. | Dual zone template chuck |
EP2267531A2 (en) | 2004-06-03 | 2010-12-29 | Molecular Imprints, Inc. | Method to vary dimensions of a substrate during nano-scale manufacturing |
WO2011002518A2 (en) | 2009-07-02 | 2011-01-06 | Molecular Imprints, Inc. | Chucking system with recessed support feature |
US20110030770A1 (en) * | 2009-08-04 | 2011-02-10 | Molecular Imprints, Inc. | Nanostructured organic solar cells |
US20110031650A1 (en) * | 2009-08-04 | 2011-02-10 | Molecular Imprints, Inc. | Adjacent Field Alignment |
US20110048518A1 (en) * | 2009-08-26 | 2011-03-03 | Molecular Imprints, Inc. | Nanostructured thin film inorganic solar cells |
US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
WO2011043820A1 (en) | 2009-10-08 | 2011-04-14 | Molecular Imprints, Inc. | Large area linear array nanoimprinting |
WO2011066450A2 (en) | 2009-11-24 | 2011-06-03 | Molecular Imprints, Inc. | Adhesion layers in nanoimprint lithography |
WO2011072202A1 (en) | 2009-12-10 | 2011-06-16 | Molecular Imprints, Inc. | Imprint lithography template |
US20110171340A1 (en) * | 2002-07-08 | 2011-07-14 | Molecular Imprints, Inc. | Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template |
US7985530B2 (en) | 2006-09-19 | 2011-07-26 | Molecular Imprints, Inc. | Etch-enhanced technique for lift-off patterning |
US20110183070A1 (en) * | 2010-01-28 | 2011-07-28 | Molecular Imprints, Inc. | Roll-to-roll imprint lithography and purging system |
US20110180127A1 (en) * | 2010-01-28 | 2011-07-28 | Molecular Imprints, Inc. | Solar cell fabrication by nanoimprint lithography |
US20110183027A1 (en) * | 2010-01-26 | 2011-07-28 | Molecular Imprints, Inc. | Micro-Conformal Templates for Nanoimprint Lithography |
US20110183521A1 (en) * | 2010-01-27 | 2011-07-28 | Molecular Imprints, Inc. | Methods and systems of material removal and pattern transfer |
US20110189329A1 (en) * | 2010-01-29 | 2011-08-04 | Molecular Imprints, Inc. | Ultra-Compliant Nanoimprint Lithography Template |
US20110190463A1 (en) * | 2009-08-26 | 2011-08-04 | Molecular Imprints, Inc. | Nanoimprint lithography processes for forming nanoparticles |
US20110192302A1 (en) * | 2010-02-05 | 2011-08-11 | Molecular Imprints, Inc. | Templates Having High Contrast Alignment Marks |
US20110193251A1 (en) * | 2010-02-09 | 2011-08-11 | Molecular Imprints, Inc. | Process Gas Confinement for Nano-Imprinting |
WO2011139782A1 (en) | 2010-04-27 | 2011-11-10 | Molecular Imprints, Inc. | Separation control substrate/template for nanoimprint lithography |
WO2012006521A1 (en) | 2010-07-08 | 2012-01-12 | Molecular Imprints, Inc. | Enhanced densification of silicon oxide layers |
US8142850B2 (en) | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
US8158728B2 (en) | 2004-02-13 | 2012-04-17 | The University Of North Carolina At Chapel Hill | Methods and materials for fabricating microfluidic devices |
US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
WO2013126750A1 (en) | 2012-02-22 | 2013-08-29 | Molecular Imprints, Inc. | Large area imprint lithography |
US20130337176A1 (en) * | 2012-06-19 | 2013-12-19 | Seagate Technology Llc | Nano-scale void reduction |
US8828297B2 (en) | 2010-11-05 | 2014-09-09 | Molecular Imprints, Inc. | Patterning of non-convex shaped nanostructures |
US20140265013A1 (en) * | 2013-03-15 | 2014-09-18 | The Trustees Of Princeton University | Methods for creating large-area complex nanopatterns for nanoimprint molds |
WO2014145634A2 (en) | 2013-03-15 | 2014-09-18 | Canon Nanotechnologies, Inc. | Nano imprinting with reusable polymer template with metallic or oxide coating |
US8846195B2 (en) | 2005-07-22 | 2014-09-30 | Canon Nanotechnologies, Inc. | Ultra-thin polymeric adhesion layer |
US8891080B2 (en) | 2010-07-08 | 2014-11-18 | Canon Nanotechnologies, Inc. | Contaminate detection and substrate cleaning |
US8916200B2 (en) | 2010-11-05 | 2014-12-23 | Molecular Imprints, Inc. | Nanoimprint lithography formation of functional nanoparticles using dual release layers |
US8926888B2 (en) | 2011-02-25 | 2015-01-06 | Board Of Regents, The University Of Texas System | Fluorinated silazane release agents in nanoimprint lithography |
US8935981B2 (en) | 2010-09-24 | 2015-01-20 | Canon Nanotechnologies, Inc. | High contrast alignment marks through multiple stage imprinting |
US8961800B2 (en) | 2009-08-26 | 2015-02-24 | Board Of Regents, The University Of Texas System | Functional nanoparticles |
US8967992B2 (en) | 2011-04-25 | 2015-03-03 | Canon Nanotechnologies, Inc. | Optically absorptive material for alignment marks |
WO2015070054A1 (en) | 2013-11-08 | 2015-05-14 | Canon Nanotechnologies, Inc. | Low contact imprint lithography template chuck system for improved overlay correction |
WO2015089158A1 (en) | 2013-12-10 | 2015-06-18 | Canon Nanotechnologies, Inc. | Imprint lithography template and method for zero-gap imprinting |
US9070803B2 (en) | 2010-05-11 | 2015-06-30 | Molecular Imprints, Inc. | Nanostructured solar cell |
WO2015103232A1 (en) | 2013-12-30 | 2015-07-09 | Canon Nanotechnologies, Inc. | Methods for uniform imprint pattern transfer of sub-20 nm features |
US9452574B2 (en) | 2011-12-19 | 2016-09-27 | Canon Nanotechnologies, Inc. | Fabrication of seamless large area master templates for imprint lithography using step and repeat tools |
EP3141956A1 (en) | 2015-09-08 | 2017-03-15 | Canon Kabushiki Kaisha | Substrate pretreatment for reducing fill time in nanoimprint lithography |
US9651862B2 (en) | 2013-07-12 | 2017-05-16 | Canon Nanotechnologies, Inc. | Drop pattern generation for imprint lithography with directionally-patterned templates |
US10095106B2 (en) | 2016-03-31 | 2018-10-09 | Canon Kabushiki Kaisha | Removing substrate pretreatment compositions in nanoimprint lithography |
US10134588B2 (en) | 2016-03-31 | 2018-11-20 | Canon Kabushiki Kaisha | Imprint resist and substrate pretreatment for reducing fill time in nanoimprint lithography |
US10189188B2 (en) | 2016-05-20 | 2019-01-29 | Canon Kabushiki Kaisha | Nanoimprint lithography adhesion layer |
US10317793B2 (en) | 2017-03-03 | 2019-06-11 | Canon Kabushiki Kaisha | Substrate pretreatment compositions for nanoimprint lithography |
US10390724B2 (en) | 2013-06-26 | 2019-08-27 | The Penn State Research Foundation | Three-dimensional bio-medical probe sensing and contacting structures with addressibility and tunability |
US10488753B2 (en) | 2015-09-08 | 2019-11-26 | Canon Kabushiki Kaisha | Substrate pretreatment and etch uniformity in nanoimprint lithography |
US10509313B2 (en) | 2016-06-28 | 2019-12-17 | Canon Kabushiki Kaisha | Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography |
US10578964B2 (en) | 2013-12-31 | 2020-03-03 | Canon Nanotechnologies, Inc. | Asymmetric template shape modulation for partial field imprinting |
US10620539B2 (en) | 2016-03-31 | 2020-04-14 | Canon Kabushiki Kaisha | Curing substrate pretreatment compositions in nanoimprint lithography |
US10953370B2 (en) | 2015-02-05 | 2021-03-23 | The Penn State Research Foundation | Nano-pore arrays for bio-medical, environmental, and industrial sorting, filtering, monitoring, or dispensing |
JP2021511543A (en) * | 2018-01-26 | 2021-05-06 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Control of diffraction grating out-coupling strength of AR waveguide coupler |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US10935883B2 (en) | 2017-09-29 | 2021-03-02 | Canon Kabushiki Kaisha | Nanoimprint template with light blocking material and method of fabrication |
US10895806B2 (en) | 2017-09-29 | 2021-01-19 | Canon Kabushiki Kaisha | Imprinting method and apparatus |
US10788749B2 (en) | 2017-11-30 | 2020-09-29 | Canon Kabushiki Kaisha | System and method for improving the throughput of a nanoimprint system |
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US11194247B2 (en) | 2018-01-31 | 2021-12-07 | Canon Kabushiki Kaisha | Extrusion control by capillary force reduction |
US11249405B2 (en) | 2018-04-30 | 2022-02-15 | Canon Kabushiki Kaisha | System and method for improving the performance of a nanoimprint system |
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Citations (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4552832A (en) * | 1982-03-06 | 1985-11-12 | Braun Aktiengesellschaft | Shear foil having protrusions on its skin-contacting surface thereof |
US4731155A (en) * | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US4959252A (en) * | 1986-09-29 | 1990-09-25 | Rhone-Poulenc Chimie | Highly oriented thermotropic optical disc member |
US5240550A (en) * | 1990-09-21 | 1993-08-31 | U.S. Philips Corp. | Method of forming at least one groove in a substrate layer |
US5246880A (en) * | 1992-04-27 | 1993-09-21 | Eastman Kodak Company | Method for creating substrate electrodes for flip chip and other applications |
US5480047A (en) * | 1993-06-04 | 1996-01-02 | Sharp Kabushiki Kaisha | Method for forming a fine resist pattern |
US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
US5545367A (en) * | 1992-04-15 | 1996-08-13 | Soane Technologies, Inc. | Rapid prototype three dimensional stereolithography |
US5724145A (en) * | 1995-07-17 | 1998-03-03 | Seiko Epson Corporation | Optical film thickness measurement method, film formation method, and semiconductor laser fabrication method |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US5776748A (en) * | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
US5888650A (en) * | 1996-06-03 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Temperature-responsive adhesive article |
US5900160A (en) * | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
US5948470A (en) * | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US6038280A (en) * | 1997-03-13 | 2000-03-14 | Helmut Fischer Gmbh & Co. Institut Fur Electronik Und Messtechnik | Method and apparatus for measuring the thicknesses of thin layers by means of x-ray fluorescence |
US6039897A (en) * | 1996-08-28 | 2000-03-21 | University Of Washington | Multiple patterned structures on a single substrate fabricated by elastomeric micro-molding techniques |
US6046056A (en) * | 1996-06-28 | 2000-04-04 | Caliper Technologies Corporation | High throughput screening assay systems in microscale fluidic devices |
US6074827A (en) * | 1996-07-30 | 2000-06-13 | Aclara Biosciences, Inc. | Microfluidic method for nucleic acid purification and processing |
US6096220A (en) * | 1998-11-16 | 2000-08-01 | Archimedes Technology Group, Inc. | Plasma mass filter |
US6128085A (en) * | 1997-12-09 | 2000-10-03 | N & K Technology, Inc. | Reflectance spectroscopic apparatus with toroidal mirrors |
US6143412A (en) * | 1997-02-10 | 2000-11-07 | President And Fellows Of Harvard College | Fabrication of carbon microstructures |
US6180239B1 (en) * | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
US6218316B1 (en) * | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6326627B1 (en) * | 2000-08-02 | 2001-12-04 | Archimedes Technology Group, Inc. | Mass filtering sputtered ion source |
US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US20020094496A1 (en) * | 2000-07-17 | 2002-07-18 | Choi Byung J. | Method and system of automatic fluid dispensing for imprint lithography processes |
US6482742B1 (en) * | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US6503829B2 (en) * | 2000-08-19 | 2003-01-07 | Samsung Electronics Co., Ltd. | Metal via contact of a semiconductor device and method for fabricating the same |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6517977B2 (en) * | 2001-03-28 | 2003-02-11 | Motorola, Inc. | Lithographic template and method of formation and use |
US20040029041A1 (en) * | 2002-02-27 | 2004-02-12 | Brewer Science, Inc. | Novel planarization method for multi-layer lithography processing |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6861365B2 (en) * | 2002-06-28 | 2005-03-01 | Hewlett-Packard Development Company, L.P. | Method and system for forming a semiconductor device |
-
2002
- 2002-10-04 US US10/264,926 patent/US20040065252A1/en not_active Abandoned
-
2010
- 2010-03-30 US US12/749,552 patent/US8066930B2/en not_active Expired - Fee Related
Patent Citations (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4552832A (en) * | 1982-03-06 | 1985-11-12 | Braun Aktiengesellschaft | Shear foil having protrusions on its skin-contacting surface thereof |
US4959252A (en) * | 1986-09-29 | 1990-09-25 | Rhone-Poulenc Chimie | Highly oriented thermotropic optical disc member |
US4731155A (en) * | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US5240550A (en) * | 1990-09-21 | 1993-08-31 | U.S. Philips Corp. | Method of forming at least one groove in a substrate layer |
US5545367A (en) * | 1992-04-15 | 1996-08-13 | Soane Technologies, Inc. | Rapid prototype three dimensional stereolithography |
US5246880A (en) * | 1992-04-27 | 1993-09-21 | Eastman Kodak Company | Method for creating substrate electrodes for flip chip and other applications |
US5480047A (en) * | 1993-06-04 | 1996-01-02 | Sharp Kabushiki Kaisha | Method for forming a fine resist pattern |
US6180239B1 (en) * | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
US5776748A (en) * | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
US5900160A (en) * | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
US5724145A (en) * | 1995-07-17 | 1998-03-03 | Seiko Epson Corporation | Optical film thickness measurement method, film formation method, and semiconductor laser fabrication method |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US5888650A (en) * | 1996-06-03 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Temperature-responsive adhesive article |
US6046056A (en) * | 1996-06-28 | 2000-04-04 | Caliper Technologies Corporation | High throughput screening assay systems in microscale fluidic devices |
US6074827A (en) * | 1996-07-30 | 2000-06-13 | Aclara Biosciences, Inc. | Microfluidic method for nucleic acid purification and processing |
US6039897A (en) * | 1996-08-28 | 2000-03-21 | University Of Washington | Multiple patterned structures on a single substrate fabricated by elastomeric micro-molding techniques |
US6143412A (en) * | 1997-02-10 | 2000-11-07 | President And Fellows Of Harvard College | Fabrication of carbon microstructures |
US6038280A (en) * | 1997-03-13 | 2000-03-14 | Helmut Fischer Gmbh & Co. Institut Fur Electronik Und Messtechnik | Method and apparatus for measuring the thicknesses of thin layers by means of x-ray fluorescence |
US5948470A (en) * | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US6128085A (en) * | 1997-12-09 | 2000-10-03 | N & K Technology, Inc. | Reflectance spectroscopic apparatus with toroidal mirrors |
US6218316B1 (en) * | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6096220A (en) * | 1998-11-16 | 2000-08-01 | Archimedes Technology Group, Inc. | Plasma mass filter |
US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US20020094496A1 (en) * | 2000-07-17 | 2002-07-18 | Choi Byung J. | Method and system of automatic fluid dispensing for imprint lithography processes |
US6482742B1 (en) * | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US6326627B1 (en) * | 2000-08-02 | 2001-12-04 | Archimedes Technology Group, Inc. | Mass filtering sputtered ion source |
US6503829B2 (en) * | 2000-08-19 | 2003-01-07 | Samsung Electronics Co., Ltd. | Metal via contact of a semiconductor device and method for fabricating the same |
US6517977B2 (en) * | 2001-03-28 | 2003-02-11 | Motorola, Inc. | Lithographic template and method of formation and use |
US20040029041A1 (en) * | 2002-02-27 | 2004-02-12 | Brewer Science, Inc. | Novel planarization method for multi-layer lithography processing |
Cited By (233)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050236739A1 (en) * | 1999-03-11 | 2005-10-27 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US20030235787A1 (en) * | 2002-06-24 | 2003-12-25 | Watts Michael P.C. | Low viscosity high resolution patterning material |
US20110171340A1 (en) * | 2002-07-08 | 2011-07-14 | Molecular Imprints, Inc. | Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template |
US8556616B2 (en) | 2002-07-08 | 2013-10-15 | Molecular Imprints, Inc. | Template having a varying thickness to facilitate expelling a gas positioned between a substrate and the template |
US20040124566A1 (en) * | 2002-07-11 | 2004-07-01 | Sreenivasan Sidlgata V. | Step and repeat imprint lithography processes |
US7727453B2 (en) | 2002-07-11 | 2010-06-01 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
US20040116548A1 (en) * | 2002-12-12 | 2004-06-17 | Molecular Imprints, Inc. | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US20040112862A1 (en) * | 2002-12-12 | 2004-06-17 | Molecular Imprints, Inc. | Planarization composition and method of patterning a substrate using the same |
US20050028618A1 (en) * | 2002-12-12 | 2005-02-10 | Molecular Imprints, Inc. | System for determining characteristics of substrates employing fluid geometries |
US7365103B2 (en) | 2002-12-12 | 2008-04-29 | Board Of Regents, The University Of Texas System | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US20040168613A1 (en) * | 2003-02-27 | 2004-09-02 | Molecular Imprints, Inc. | Composition and method to form a release layer |
US8152511B2 (en) | 2003-06-17 | 2012-04-10 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
US20090272875A1 (en) * | 2003-06-17 | 2009-11-05 | Molecular Imprints, Inc. | Composition to Reduce Adhesion Between a Conformable Region and a Mold |
US8268446B2 (en) | 2003-09-23 | 2012-09-18 | The University Of North Carolina At Chapel Hill | Photocurable perfluoropolyethers for use as novel materials in microfluidic devices |
US20090165320A1 (en) * | 2003-09-23 | 2009-07-02 | Desimone Joseph M | Photocurable perfluoropolyethers for use as novel materials in microfluidic devices |
US20050067379A1 (en) * | 2003-09-25 | 2005-03-31 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
US20050084804A1 (en) * | 2003-10-16 | 2005-04-21 | Molecular Imprints, Inc. | Low surface energy templates |
US7122482B2 (en) | 2003-10-27 | 2006-10-17 | Molecular Imprints, Inc. | Methods for fabricating patterned features utilizing imprint lithography |
US10842748B2 (en) | 2003-12-19 | 2020-11-24 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US9877920B2 (en) | 2003-12-19 | 2018-01-30 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US20090028910A1 (en) * | 2003-12-19 | 2009-01-29 | University Of North Carolina At Chapel Hill | Methods for Fabrication Isolated Micro-and Nano-Structures Using Soft or Imprint Lithography |
US11642313B2 (en) | 2003-12-19 | 2023-05-09 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US8263129B2 (en) | 2003-12-19 | 2012-09-11 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro-and nano-structures using soft or imprint lithography |
US20090061152A1 (en) * | 2003-12-19 | 2009-03-05 | Desimone Joseph M | Methods for fabricating isolated micro- and nano- structures using soft or imprint lithography |
US8420124B2 (en) | 2003-12-19 | 2013-04-16 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- and nano-structures using soft or imprint lithography |
US8992992B2 (en) | 2003-12-19 | 2015-03-31 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US9040090B2 (en) | 2003-12-19 | 2015-05-26 | The University Of North Carolina At Chapel Hill | Isolated and fixed micro and nano structures and methods thereof |
US10517824B2 (en) | 2003-12-19 | 2019-12-31 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US9902818B2 (en) | 2003-12-19 | 2018-02-27 | The University Of North Carolina At Chapel Hill | Isolated and fixed micro and nano structures and methods thereof |
US20070264481A1 (en) * | 2003-12-19 | 2007-11-15 | Desimone Joseph M | Isolated and fixed micro and nano structures and methods thereof |
US7837921B2 (en) | 2004-01-23 | 2010-11-23 | Molecular Imprints, Inc. | Method of providing desirable wetting and release characteristics between a mold and a polymerizable composition |
US20110031651A1 (en) * | 2004-01-23 | 2011-02-10 | Molecular Imprints, Inc. | Desirable wetting and release between an imprint lithography mold and a polymerizable composition |
US20050160934A1 (en) * | 2004-01-23 | 2005-07-28 | Molecular Imprints, Inc. | Materials and methods for imprint lithography |
US8268220B2 (en) | 2004-01-23 | 2012-09-18 | Molecular Imprints, Inc. | Imprint lithography method |
US8158728B2 (en) | 2004-02-13 | 2012-04-17 | The University Of North Carolina At Chapel Hill | Methods and materials for fabricating microfluidic devices |
US8444899B2 (en) | 2004-02-13 | 2013-05-21 | The University Of North Carolina At Chapel Hill | Methods and materials for fabricating microfluidic devices |
US20070275193A1 (en) * | 2004-02-13 | 2007-11-29 | Desimone Joseph M | Functional Materials and Novel Methods for the Fabrication of Microfluidic Devices |
US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
US20050187339A1 (en) * | 2004-02-23 | 2005-08-25 | Molecular Imprints, Inc. | Materials for imprint lithography |
US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US20050192421A1 (en) * | 2004-02-27 | 2005-09-01 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US20110140306A1 (en) * | 2004-02-27 | 2011-06-16 | Molecular Imprints, Inc. | Composition for an Etching Mask Comprising a Silicon-Containing Material |
WO2005119395A2 (en) | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Method and system to control movement of a body for nano-scale manufacturing |
US20050276919A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Method for dispensing a fluid on a substrate |
US20110048160A1 (en) * | 2004-06-01 | 2011-03-03 | Molecular Imprints. Inc. | Method and System to Control Movement of a Body for Nano-Scale Manufacturing |
US8387482B2 (en) | 2004-06-01 | 2013-03-05 | Molecular Imprints, Inc. | Method and system to control movement of a body for nano-scale manufacturing |
US20070287081A1 (en) * | 2004-06-03 | 2007-12-13 | Molecular Imprints, Inc. | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
EP2267531A2 (en) | 2004-06-03 | 2010-12-29 | Molecular Imprints, Inc. | Method to vary dimensions of a substrate during nano-scale manufacturing |
US7768624B2 (en) | 2004-06-03 | 2010-08-03 | Board Of Regents, The University Of Texas System | Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques |
US20060017876A1 (en) * | 2004-07-23 | 2006-01-26 | Molecular Imprints, Inc. | Displays and method for fabricating displays |
US7105452B2 (en) | 2004-08-13 | 2006-09-12 | Molecular Imprints, Inc. | Method of planarizing a semiconductor substrate with an etching chemistry |
US20060035464A1 (en) * | 2004-08-13 | 2006-02-16 | Molecular Imprints, Inc. | Method of planarizing a semiconductor substrate |
US7939131B2 (en) | 2004-08-16 | 2011-05-10 | Molecular Imprints, Inc. | Method to provide a layer with uniform etch characteristics |
US20060036051A1 (en) * | 2004-08-16 | 2006-02-16 | Molecular Imprints, Inc. | Composition to provide a layer with uniform etch characteristics |
US20060035029A1 (en) * | 2004-08-16 | 2006-02-16 | Molecular Imprints, Inc. | Method to provide a layer with uniform etch characteristics |
US7282550B2 (en) | 2004-08-16 | 2007-10-16 | Molecular Imprints, Inc. | Composition to provide a layer with uniform etch characteristics |
EP2146370A2 (en) | 2004-09-21 | 2010-01-20 | Molecular Imprints, Inc. | Method of forming an in-situ recessed structure |
EP2146369A2 (en) | 2004-09-21 | 2010-01-20 | Molecular Imprints, Inc. | Method of forming an in-situ recessed structure |
US20060063359A1 (en) * | 2004-09-21 | 2006-03-23 | Molecular Imprints, Inc. | Patterning substrates employing multi-film layers defining etch differential interfaces |
US7981481B2 (en) | 2004-09-23 | 2011-07-19 | Molecular Imprints, Inc. | Method for controlling distribution of fluid components on a body |
US20070141271A1 (en) * | 2004-09-23 | 2007-06-21 | Molecular Imprints, Inc. | Method for controlling distribution of fluid components on a body |
US20080085465A1 (en) * | 2004-09-23 | 2008-04-10 | Molecular Imprints, Inc. | Polymerization Technique to Attenuate Oxygen Inhibition of Solidification of Liquids and Composition Therefor |
US7845931B2 (en) | 2004-09-23 | 2010-12-07 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US20060062922A1 (en) * | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US7244386B2 (en) | 2004-09-27 | 2007-07-17 | Molecular Imprints, Inc. | Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom |
US20060081557A1 (en) * | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
US8889332B2 (en) | 2004-10-18 | 2014-11-18 | Canon Nanotechnologies, Inc. | Low-K dielectric functional imprinting materials |
US7472576B1 (en) | 2004-11-17 | 2009-01-06 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University | Nanometrology device standards for scanning probe microscopes and processes for their fabrication and use |
US20060111454A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
US20060108710A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Method to reduce adhesion between a conformable region and a mold |
US20110215503A1 (en) * | 2004-11-24 | 2011-09-08 | Molecular Imprints, Inc. | Reducing Adhesion between a Conformable Region and a Mold |
WO2006057843A2 (en) | 2004-11-24 | 2006-06-01 | Molecular Imprints, Inc. | Method and composition providing desirable characteristics between a mold and a polymerizable composition |
US20060113697A1 (en) * | 2004-12-01 | 2006-06-01 | Molecular Imprints, Inc. | Eliminating printability of sub-resolution defects in imprint lithography |
US20060145398A1 (en) * | 2004-12-30 | 2006-07-06 | Board Of Regents, The University Of Texas System | Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks |
US20090027603A1 (en) * | 2005-02-03 | 2009-01-29 | Samulski Edward T | Low Surface Energy Polymeric Material for Use in Liquid Crystal Displays |
US20070212494A1 (en) * | 2005-07-22 | 2007-09-13 | Molecular Imprints, Inc. | Method for Imprint Lithography Utilizing an Adhesion Primer Layer |
US8557351B2 (en) | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
US7759407B2 (en) | 2005-07-22 | 2010-07-20 | Molecular Imprints, Inc. | Composition for adhering materials together |
US8808808B2 (en) | 2005-07-22 | 2014-08-19 | Molecular Imprints, Inc. | Method for imprint lithography utilizing an adhesion primer layer |
US20070017631A1 (en) * | 2005-07-22 | 2007-01-25 | Molecular Imprints, Inc. | Method for adhering materials together |
US20070021520A1 (en) * | 2005-07-22 | 2007-01-25 | Molecular Imprints, Inc. | Composition for adhering materials together |
US8846195B2 (en) | 2005-07-22 | 2014-09-30 | Canon Nanotechnologies, Inc. | Ultra-thin polymeric adhesion layer |
US20090304992A1 (en) * | 2005-08-08 | 2009-12-10 | Desimone Joseph M | Micro and Nano-Structure Metrology |
US20090136654A1 (en) * | 2005-10-05 | 2009-05-28 | Molecular Imprints, Inc. | Contact Angle Attenuations on Multiple Surfaces |
US8142703B2 (en) | 2005-10-05 | 2012-03-27 | Molecular Imprints, Inc. | Imprint lithography method |
US20070126150A1 (en) * | 2005-12-01 | 2007-06-07 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
US7906058B2 (en) | 2005-12-01 | 2011-03-15 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
US20070126156A1 (en) * | 2005-12-01 | 2007-06-07 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
EP2413189A1 (en) | 2005-12-01 | 2012-02-01 | Molecular Imprints, Inc. | A method for spreading a conformable material between a substrate and a template |
US7803308B2 (en) | 2005-12-01 | 2010-09-28 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
WO2007067488A2 (en) | 2005-12-08 | 2007-06-14 | Molecular Imprints, Inc. | Method and system for double-sided patterning of substrates |
US7670529B2 (en) | 2005-12-08 | 2010-03-02 | Molecular Imprints, Inc. | Method and system for double-sided patterning of substrates |
US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
US20070170617A1 (en) * | 2006-01-20 | 2007-07-26 | Molecular Imprints, Inc. | Patterning Substrates Employing Multiple Chucks |
US7802978B2 (en) | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
US7780893B2 (en) | 2006-04-03 | 2010-08-24 | Molecular Imprints, Inc. | Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks |
US8142850B2 (en) | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
US20070228610A1 (en) * | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Method of Concurrently Patterning a Substrate Having a Plurality of Fields and a Plurality of Alignment Marks |
US8012395B2 (en) | 2006-04-18 | 2011-09-06 | Molecular Imprints, Inc. | Template having alignment marks formed of contrast material |
US20090250840A1 (en) * | 2006-04-18 | 2009-10-08 | Molecular Imprints, Inc. | Template Having Alignment Marks Formed of Contrast Material |
US20070243655A1 (en) * | 2006-04-18 | 2007-10-18 | Molecular Imprints, Inc. | Self-Aligned Process for Fabricating Imprint Templates Containing Variously Etched Features |
USRE47483E1 (en) | 2006-05-11 | 2019-07-02 | Molecular Imprints, Inc. | Template having a varying thickness to facilitate expelling a gas positioned between a substrate and the template |
US20080181958A1 (en) * | 2006-06-19 | 2008-07-31 | Rothrock Ginger D | Nanoparticle fabrication methods, systems, and materials |
US7985530B2 (en) | 2006-09-19 | 2011-07-26 | Molecular Imprints, Inc. | Etch-enhanced technique for lift-off patterning |
US20080110557A1 (en) * | 2006-11-15 | 2008-05-15 | Molecular Imprints, Inc. | Methods and Compositions for Providing Preferential Adhesion and Release of Adjacent Surfaces |
US20100151031A1 (en) * | 2007-03-23 | 2010-06-17 | Desimone Joseph M | Discrete size and shape specific organic nanoparticles designed to elicit an immune response |
US20090004319A1 (en) * | 2007-05-30 | 2009-01-01 | Molecular Imprints, Inc. | Template Having a Silicon Nitride, Silicon Carbide or Silicon Oxynitride Film |
US8142702B2 (en) | 2007-06-18 | 2012-03-27 | Molecular Imprints, Inc. | Solvent-assisted layer formation for imprint lithography |
US20080308971A1 (en) * | 2007-06-18 | 2008-12-18 | Molecular Imprints, Inc. | Solvent-Assisted Layer Formation for Imprint Lithography |
US20090026657A1 (en) * | 2007-07-20 | 2009-01-29 | Molecular Imprints, Inc. | Alignment System and Method for a Substrate in a Nano-Imprint Process |
US7837907B2 (en) | 2007-07-20 | 2010-11-23 | Molecular Imprints, Inc. | Alignment system and method for a substrate in a nano-imprint process |
US20090035934A1 (en) * | 2007-07-31 | 2009-02-05 | Molecular Imprints, Inc. | Self-Aligned Cross-Point Memory Fabrication |
US7795132B2 (en) * | 2007-07-31 | 2010-09-14 | Molecular Imprints, Inc. | Self-aligned cross-point memory fabrication |
US20090053535A1 (en) * | 2007-08-24 | 2009-02-26 | Molecular Imprints, Inc. | Reduced Residual Formation in Etched Multi-Layer Stacks |
US7906274B2 (en) | 2007-11-21 | 2011-03-15 | Molecular Imprints, Inc. | Method of creating a template employing a lift-off process |
US20090130598A1 (en) * | 2007-11-21 | 2009-05-21 | Molecular Imprints, Inc. | Method of Creating a Template Employing a Lift-Off Process |
US20090140458A1 (en) * | 2007-11-21 | 2009-06-04 | Molecular Imprints, Inc. | Porous template and imprinting stack for nano-imprint lithography |
US9778562B2 (en) | 2007-11-21 | 2017-10-03 | Canon Nanotechnologies, Inc. | Porous template and imprinting stack for nano-imprint lithography |
US20090133751A1 (en) * | 2007-11-28 | 2009-05-28 | Molecular Imprints, Inc. | Nanostructured Organic Solar Cells |
WO2009073200A1 (en) | 2007-12-04 | 2009-06-11 | Molecular Imprints, Inc. | High throughput imprint based on contact line motion tracking control |
US20090147237A1 (en) * | 2007-12-05 | 2009-06-11 | Molecular Imprints, Inc. | Spatial Phase Feature Location |
JP2011508686A (en) * | 2007-12-18 | 2011-03-17 | モレキュラー・インプリンツ・インコーポレーテッド | Reduction of contact angle on multiple surfaces |
CN101939704A (en) * | 2008-02-08 | 2011-01-05 | 分子制模股份有限公司 | Extrusion reduction in imprint lithography |
US20090200710A1 (en) * | 2008-02-08 | 2009-08-13 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
KR102171030B1 (en) * | 2008-02-08 | 2020-10-28 | 캐논 나노테크놀로지즈 인코퍼레이티드 | Extrusion reduction in imprint lithography |
KR102065400B1 (en) * | 2008-02-08 | 2020-01-13 | 캐논 나노테크놀로지즈 인코퍼레이티드 | Extrusion reduction in imprint lithography |
US8361371B2 (en) | 2008-02-08 | 2013-01-29 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
KR20190120443A (en) * | 2008-02-08 | 2019-10-23 | 캐논 나노테크놀로지즈 인코퍼레이티드 | Extrusion reduction in imprint lithography |
JP2011521438A (en) * | 2008-02-08 | 2011-07-21 | モレキュラー・インプリンツ・インコーポレーテッド | Reduction of protrusion in imprint lithography |
KR20160054631A (en) * | 2008-02-08 | 2016-05-16 | 캐논 나노테크놀로지즈 인코퍼레이티드 | Extrusion reduction in imprint lithography |
WO2009099666A1 (en) * | 2008-02-08 | 2009-08-13 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
US20100072671A1 (en) * | 2008-09-25 | 2010-03-25 | Molecular Imprints, Inc. | Nano-imprint lithography template fabrication and treatment |
US8470188B2 (en) | 2008-10-02 | 2013-06-25 | Molecular Imprints, Inc. | Nano-imprint lithography templates |
US20100084376A1 (en) * | 2008-10-02 | 2010-04-08 | Molecular Imprints, Inc. | Nano-imprint lithography templates |
US20100090341A1 (en) * | 2008-10-14 | 2010-04-15 | Molecular Imprints, Inc. | Nano-patterned active layers formed by nano-imprint lithography |
US20100098940A1 (en) * | 2008-10-20 | 2010-04-22 | Molecular Imprints, Inc. | Nano-Imprint Lithography Stack with Enhanced Adhesion Between Silicon-Containing and Non-Silicon Containing Layers |
US8415010B2 (en) | 2008-10-20 | 2013-04-09 | Molecular Imprints, Inc. | Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers |
US8075299B2 (en) | 2008-10-21 | 2011-12-13 | Molecular Imprints, Inc. | Reduction of stress during template separation |
US20100096776A1 (en) * | 2008-10-21 | 2010-04-22 | Molecular Imprints, Inc. | Reduction of Stress During Template Separation |
US20100098848A1 (en) * | 2008-10-22 | 2010-04-22 | Molecular Imprints, Inc. | Fluid Dispense Device Calibration |
US20100095862A1 (en) * | 2008-10-22 | 2010-04-22 | Molecular Imprints, Inc. | Double Sidewall Angle Nano-Imprint Template |
US20100104852A1 (en) * | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Fabrication of High-Throughput Nano-Imprint Lithography Templates |
WO2010047788A2 (en) | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Imprint lithography system and method |
US20100102469A1 (en) * | 2008-10-24 | 2010-04-29 | Molecular Imprints, Inc. | Strain and Kinetics Control During Separation Phase of Imprint Process |
US11161280B2 (en) | 2008-10-24 | 2021-11-02 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
US20100112236A1 (en) * | 2008-10-30 | 2010-05-06 | Molecular Imprints, Inc. | Facilitating Adhesion Between Substrate and Patterned Layer |
US8361546B2 (en) | 2008-10-30 | 2013-01-29 | Molecular Imprints, Inc. | Facilitating adhesion between substrate and patterned layer |
US20100112220A1 (en) * | 2008-11-03 | 2010-05-06 | Molecular Imprints, Inc. | Dispense system set-up and characterization |
US20100109205A1 (en) * | 2008-11-04 | 2010-05-06 | Molecular Imprints, Inc. | Photocatalytic reactions in nano-imprint lithography processes |
US8637587B2 (en) | 2008-11-05 | 2014-01-28 | Molecular Imprints, Inc. | Release agent partition control in imprint lithography |
US20100109195A1 (en) * | 2008-11-05 | 2010-05-06 | Molecular Imprints, Inc. | Release agent partition control in imprint lithography |
WO2010147671A1 (en) | 2009-06-19 | 2010-12-23 | Molecular Imprints, Inc. | Dual zone template chuck |
WO2011002518A2 (en) | 2009-07-02 | 2011-01-06 | Molecular Imprints, Inc. | Chucking system with recessed support feature |
US8913230B2 (en) | 2009-07-02 | 2014-12-16 | Canon Nanotechnologies, Inc. | Chucking system with recessed support feature |
US20110030770A1 (en) * | 2009-08-04 | 2011-02-10 | Molecular Imprints, Inc. | Nanostructured organic solar cells |
WO2011016849A2 (en) | 2009-08-04 | 2011-02-10 | Molecular Imprints, Inc. | Adjacent field alignment |
US20110031650A1 (en) * | 2009-08-04 | 2011-02-10 | Molecular Imprints, Inc. | Adjacent Field Alignment |
WO2011016839A1 (en) | 2009-08-04 | 2011-02-10 | Board Of Regents, The University Of Texas System | Nanostructured organic solar cells |
WO2011031293A2 (en) | 2009-08-26 | 2011-03-17 | Molecular Imprints, Inc. | Nanostructured thin film inorganic solar cells |
US20110190463A1 (en) * | 2009-08-26 | 2011-08-04 | Molecular Imprints, Inc. | Nanoimprint lithography processes for forming nanoparticles |
US8802747B2 (en) | 2009-08-26 | 2014-08-12 | Molecular Imprints, Inc. | Nanoimprint lithography processes for forming nanoparticles |
US8961800B2 (en) | 2009-08-26 | 2015-02-24 | Board Of Regents, The University Of Texas System | Functional nanoparticles |
US20110048518A1 (en) * | 2009-08-26 | 2011-03-03 | Molecular Imprints, Inc. | Nanostructured thin film inorganic solar cells |
WO2011043820A1 (en) | 2009-10-08 | 2011-04-14 | Molecular Imprints, Inc. | Large area linear array nanoimprinting |
US20110084417A1 (en) * | 2009-10-08 | 2011-04-14 | Molecular Imprints, Inc. | Large area linear array nanoimprinting |
WO2011066450A2 (en) | 2009-11-24 | 2011-06-03 | Molecular Imprints, Inc. | Adhesion layers in nanoimprint lithography |
US20110165412A1 (en) * | 2009-11-24 | 2011-07-07 | Molecular Imprints, Inc. | Adhesion layers in nanoimprint lithograhy |
US9227361B2 (en) | 2009-12-10 | 2016-01-05 | Canon Nanotechnologies, Inc. | Imprint lithography template |
WO2011072202A1 (en) | 2009-12-10 | 2011-06-16 | Molecular Imprints, Inc. | Imprint lithography template |
US8616873B2 (en) | 2010-01-26 | 2013-12-31 | Molecular Imprints, Inc. | Micro-conformal templates for nanoimprint lithography |
US20110183027A1 (en) * | 2010-01-26 | 2011-07-28 | Molecular Imprints, Inc. | Micro-Conformal Templates for Nanoimprint Lithography |
WO2011094317A2 (en) | 2010-01-26 | 2011-08-04 | Molecular Imprints, Inc. | Micro-conformal templates for nanoimprint lithography |
US8980751B2 (en) | 2010-01-27 | 2015-03-17 | Canon Nanotechnologies, Inc. | Methods and systems of material removal and pattern transfer |
US20110183521A1 (en) * | 2010-01-27 | 2011-07-28 | Molecular Imprints, Inc. | Methods and systems of material removal and pattern transfer |
WO2011094383A2 (en) | 2010-01-27 | 2011-08-04 | Molecular Imprints, Inc. | Methods and systems of material removal and pattern transfer |
US20110183070A1 (en) * | 2010-01-28 | 2011-07-28 | Molecular Imprints, Inc. | Roll-to-roll imprint lithography and purging system |
WO2011094014A1 (en) | 2010-01-28 | 2011-08-04 | Molecular Imprints, Inc. | Roll-to-roll imprint lithography and purging system |
US8691134B2 (en) | 2010-01-28 | 2014-04-08 | Molecular Imprints, Inc. | Roll-to-roll imprint lithography and purging system |
WO2011094015A1 (en) | 2010-01-28 | 2011-08-04 | Molecular Imprints, Inc. | Solar cell fabrication by nanoimprint lithography |
US20110180127A1 (en) * | 2010-01-28 | 2011-07-28 | Molecular Imprints, Inc. | Solar cell fabrication by nanoimprint lithography |
US20110189329A1 (en) * | 2010-01-29 | 2011-08-04 | Molecular Imprints, Inc. | Ultra-Compliant Nanoimprint Lithography Template |
WO2011094696A2 (en) | 2010-01-29 | 2011-08-04 | Molecular Imprints, Inc. | Ultra-compliant nanoimprint lithography template |
WO2011094672A2 (en) | 2010-01-29 | 2011-08-04 | Molecular Imprints, Inc. | Nanoimprint lithography processes for forming nanoparticles |
US8961852B2 (en) | 2010-02-05 | 2015-02-24 | Canon Nanotechnologies, Inc. | Templates having high contrast alignment marks |
WO2011097514A2 (en) | 2010-02-05 | 2011-08-11 | Molecular Imprints, Inc. | Templates having high contrast alignment marks |
US20110192302A1 (en) * | 2010-02-05 | 2011-08-11 | Molecular Imprints, Inc. | Templates Having High Contrast Alignment Marks |
US20110193251A1 (en) * | 2010-02-09 | 2011-08-11 | Molecular Imprints, Inc. | Process Gas Confinement for Nano-Imprinting |
WO2011100050A2 (en) | 2010-02-09 | 2011-08-18 | Molecular Imprints, Inc. | Process gas confinement for nano-imprinting |
US11020894B2 (en) | 2010-04-27 | 2021-06-01 | Molecular Imprints, Inc. | Safe separation for nano imprinting |
WO2011139782A1 (en) | 2010-04-27 | 2011-11-10 | Molecular Imprints, Inc. | Separation control substrate/template for nanoimprint lithography |
US8968620B2 (en) | 2010-04-27 | 2015-03-03 | Canon Nanotechnologies, Inc. | Safe separation for nano imprinting |
US9070803B2 (en) | 2010-05-11 | 2015-06-30 | Molecular Imprints, Inc. | Nanostructured solar cell |
US9196765B2 (en) | 2010-05-11 | 2015-11-24 | Molecular Imprints, Inc.; Board Of Regents, The University Of Texas System | Nanostructured solar cell |
US8541053B2 (en) | 2010-07-08 | 2013-09-24 | Molecular Imprints, Inc. | Enhanced densification of silicon oxide layers |
WO2012006521A1 (en) | 2010-07-08 | 2012-01-12 | Molecular Imprints, Inc. | Enhanced densification of silicon oxide layers |
US8891080B2 (en) | 2010-07-08 | 2014-11-18 | Canon Nanotechnologies, Inc. | Contaminate detection and substrate cleaning |
US8935981B2 (en) | 2010-09-24 | 2015-01-20 | Canon Nanotechnologies, Inc. | High contrast alignment marks through multiple stage imprinting |
US8828297B2 (en) | 2010-11-05 | 2014-09-09 | Molecular Imprints, Inc. | Patterning of non-convex shaped nanostructures |
US8916200B2 (en) | 2010-11-05 | 2014-12-23 | Molecular Imprints, Inc. | Nanoimprint lithography formation of functional nanoparticles using dual release layers |
US8926888B2 (en) | 2011-02-25 | 2015-01-06 | Board Of Regents, The University Of Texas System | Fluorinated silazane release agents in nanoimprint lithography |
US8967992B2 (en) | 2011-04-25 | 2015-03-03 | Canon Nanotechnologies, Inc. | Optically absorptive material for alignment marks |
US9452574B2 (en) | 2011-12-19 | 2016-09-27 | Canon Nanotechnologies, Inc. | Fabrication of seamless large area master templates for imprint lithography using step and repeat tools |
US9616614B2 (en) | 2012-02-22 | 2017-04-11 | Canon Nanotechnologies, Inc. | Large area imprint lithography |
WO2013126750A1 (en) | 2012-02-22 | 2013-08-29 | Molecular Imprints, Inc. | Large area imprint lithography |
US20130337176A1 (en) * | 2012-06-19 | 2013-12-19 | Seagate Technology Llc | Nano-scale void reduction |
US10968516B2 (en) | 2013-03-15 | 2021-04-06 | Molecular Imprints, Inc. | Nano imprinting with reusable polymer template with metallic or oxide coating |
US10718054B2 (en) | 2013-03-15 | 2020-07-21 | Molecular Imprints, Inc. | Nano imprinting with reusable polymer template with metallic or oxide coating |
US9816186B2 (en) | 2013-03-15 | 2017-11-14 | Molecular Imprints, Inc. | Nano imprinting with reusable polymer template with metallic or oxide coating |
US9170485B2 (en) | 2013-03-15 | 2015-10-27 | Canon Nanotechnologies, Inc. | Nano imprinting with reusable polymer template with metallic or oxide coating |
US20140265013A1 (en) * | 2013-03-15 | 2014-09-18 | The Trustees Of Princeton University | Methods for creating large-area complex nanopatterns for nanoimprint molds |
WO2014145634A2 (en) | 2013-03-15 | 2014-09-18 | Canon Nanotechnologies, Inc. | Nano imprinting with reusable polymer template with metallic or oxide coating |
US10390724B2 (en) | 2013-06-26 | 2019-08-27 | The Penn State Research Foundation | Three-dimensional bio-medical probe sensing and contacting structures with addressibility and tunability |
US9651862B2 (en) | 2013-07-12 | 2017-05-16 | Canon Nanotechnologies, Inc. | Drop pattern generation for imprint lithography with directionally-patterned templates |
WO2015070054A1 (en) | 2013-11-08 | 2015-05-14 | Canon Nanotechnologies, Inc. | Low contact imprint lithography template chuck system for improved overlay correction |
US9778578B2 (en) | 2013-11-08 | 2017-10-03 | Canon Nanotechnologies, Inc. | Low contact imprint lithography template chuck system for improved overlay correction |
WO2015089158A1 (en) | 2013-12-10 | 2015-06-18 | Canon Nanotechnologies, Inc. | Imprint lithography template and method for zero-gap imprinting |
US10124529B2 (en) | 2013-12-10 | 2018-11-13 | Canon Nanotechnologies, Inc. | Imprint lithography template and method for zero-gap imprinting |
WO2015103232A1 (en) | 2013-12-30 | 2015-07-09 | Canon Nanotechnologies, Inc. | Methods for uniform imprint pattern transfer of sub-20 nm features |
US9514950B2 (en) | 2013-12-30 | 2016-12-06 | Canon Nanotechnologies, Inc. | Methods for uniform imprint pattern transfer of sub-20 nm features |
US10578964B2 (en) | 2013-12-31 | 2020-03-03 | Canon Nanotechnologies, Inc. | Asymmetric template shape modulation for partial field imprinting |
US10953370B2 (en) | 2015-02-05 | 2021-03-23 | The Penn State Research Foundation | Nano-pore arrays for bio-medical, environmental, and industrial sorting, filtering, monitoring, or dispensing |
EP3141956A1 (en) | 2015-09-08 | 2017-03-15 | Canon Kabushiki Kaisha | Substrate pretreatment for reducing fill time in nanoimprint lithography |
US10488753B2 (en) | 2015-09-08 | 2019-11-26 | Canon Kabushiki Kaisha | Substrate pretreatment and etch uniformity in nanoimprint lithography |
US10668677B2 (en) | 2015-09-08 | 2020-06-02 | Canon Kabushiki Kaisha | Substrate pretreatment for reducing fill time in nanoimprint lithography |
US10620539B2 (en) | 2016-03-31 | 2020-04-14 | Canon Kabushiki Kaisha | Curing substrate pretreatment compositions in nanoimprint lithography |
US10095106B2 (en) | 2016-03-31 | 2018-10-09 | Canon Kabushiki Kaisha | Removing substrate pretreatment compositions in nanoimprint lithography |
US10134588B2 (en) | 2016-03-31 | 2018-11-20 | Canon Kabushiki Kaisha | Imprint resist and substrate pretreatment for reducing fill time in nanoimprint lithography |
US10189188B2 (en) | 2016-05-20 | 2019-01-29 | Canon Kabushiki Kaisha | Nanoimprint lithography adhesion layer |
US10509313B2 (en) | 2016-06-28 | 2019-12-17 | Canon Kabushiki Kaisha | Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography |
US10317793B2 (en) | 2017-03-03 | 2019-06-11 | Canon Kabushiki Kaisha | Substrate pretreatment compositions for nanoimprint lithography |
JP2021511543A (en) * | 2018-01-26 | 2021-05-06 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Control of diffraction grating out-coupling strength of AR waveguide coupler |
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