US10509313B2 - Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography - Google Patents

Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography Download PDF

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US10509313B2
US10509313B2 US15/620,621 US201715620621A US10509313B2 US 10509313 B2 US10509313 B2 US 10509313B2 US 201715620621 A US201715620621 A US 201715620621A US 10509313 B2 US10509313 B2 US 10509313B2
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Prior art keywords
imprint resist
fluorinated
nanoimprint lithography
substrate
pretreatment
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US15/620,621
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US20170371240A1 (en
Inventor
Weijun Liu
Fen Wan
Timothy Brian Stachowiak
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Canon Inc
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Canon Inc
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Priority to US201662355760P priority Critical
Application filed by Canon Inc filed Critical Canon Inc
Priority to US15/620,621 priority patent/US10509313B2/en
Priority claimed from TW106120619A external-priority patent/TWI712484B/en
Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LIU, WEIJUN, STACHOWIAK, TIMOTHY BRIAN, WAN, FEN
Publication of US20170371240A1 publication Critical patent/US20170371240A1/en
Publication of US10509313B2 publication Critical patent/US10509313B2/en
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