CN206116360U

CN206116360U - A device for wafer paster

Info

Publication number: CN206116360U
Application number: CN201621099509.7U
Authority: CN
Inventors: 王斌; 吴建耀
Original assignee: XI'AN LIXIN OPTOELECTRONIC TECHNOLOGY Co Ltd
Current assignee: XI'AN LIXIN OPTOELECTRONIC TECHNOLOGY Co Ltd
Priority date: 2016-09-30
Filing date: 2016-09-30
Publication date: 2017-04-19
Anticipated expiration: 2026-09-30

Abstract

The utility model provides a device for wafer paster, includes actuating system and bonding cavity, the cavity of wherein binding mainly comprises last cavity and lower cavity, the indoor wafer plummer that is provided with of cavity of resorption, the epicoele is indoor be provided with and the corresponding holding down plate of wafer plummer, it is down that wafer bonding in -process, actuating system promote to go up the cavity, and forms airtight space after the cavity closure down, the holding down plate is for spherical surface structure and adopt elastic material, forms hollow airtight cavity between holding down plate and epicoele roof portion, goes up the cavity and is provided with first breather pipe. Based on the utility model discloses, the adhesive can coat ground thinner, the whole thickness deviation of bonding back wafer reduces, reduces the lobe of a leaf, has improved the yield, this thickness deviation's reduction is favorable to guaranteeing light spot pattern and light -emitting effect, also is favorable to the encapsulation in chip later stage simultaneously to and the radiating effect of encapsulation back device.

Description

A kind of device for wafer paster

Technical field

This utility model is related to a kind of device for wafer paster.

Background technology

The thinning of wafer is frequently involved in semiconductor processes, especially in the preparation process of semiconductor laser chip In, in order to reach good radiating effect and adapt to the light littleization development trend of laser chip, need to subtract 400 microns of wafer 100 microns are as thin as, but the thinning of wafer thickness causes its mechanical strength to reduce, and causes and is easy to produce in thinning process Raw fragment, production yield is greatly reduced.Therefore before reduction process is carried out, need that the front of wafer is existed by adhesive bond Have on certain thickness glass or ceramic substrate, to facilitate the operation of reduction process, increase wafer mechanical strength, split so as to reduce Piece, lifting yield.

At present conventional bonding mode is that substrate is coated into paraffin, and wafer is fitted therewith after paraffin melting, is then adopted Apply certain pressure with cylinder to bond the two, while solidifying in paraffin by cooling.The contact plate that pushes of cylinder is one flat Plate, by bonding with wafer comprehensive engagement pressure.This mode can cause unnecessary paraffin and air to discharge in time, from And making paraffin layer blocked up, integral thickness deviation TTV (total thickness variation) of wafer compares after causing to bond Greatly, typically greater than 10um, introduces unnecessary error, causes thinning wafer TTV afterwards larger, in follow-up Cleaving Process Produce sliver.Additionally, crystal column surface out-of-flatness can also make photoresist coating uneven, and then litho pattern is caused to deform, chip The beam spot deformation of generation, has a strong impact on the photoelectric properties of device.

Because bubble can not be discharged in time in adhesion process, can cause the presence of substantial amounts of bubble between wafer and substrate, reduce The intensity of bonding；It is also easy to produce breach at the bubble of crystal round fringes in thinning process, causes to split in subsequent technique Piece；Additionally, the bubble of crystal round fringes also results in abrasive grain in thinning process produces accumulation at edge, wafer frontside is caused Scratch and pollute.

Utility model content

In order to avoid prior art is because binding agent is blocked up in adhesion process and bubble can not in time discharge caused one and be Row problem, the utility model proposes a kind of new device for wafer paster.

The device includes drive system and bonding chamber, wherein bonding chamber is mainly made up of upper chamber and lower chambers, under Within the chamber is provided with wafer carrying platform, and the lower platen corresponding with the wafer carrying platform is provided with epicoele room；Wafer is bonded During, drive system promotes upper chamber descending, and after closing with lower chambers confined space is formed；Be different from prior art is： The lower platen is for spherical structure and adopts elastomeric material, and between lower platen and upper chamber top hollow airtight cavity is formed, on Chamber is provided with the first breather so that form after the confined space in the presence of gas is passed through the lower platen from center Point contact start pushes to the periphery extension and finally forms face contact to the whole plane of wafer.

On the basis of above scheme, this utility model has also made following optimization：

Above-mentioned bonding chamber is additionally provided with the second breather for connecing vacuum generating system.In addition, after binding agent solidification, Second breather can also be changed to be passed through compressed air, and (auxiliary) promotes upper chamber up.

Above-mentioned second breather can be located at the side wall of lower chambers.

Above-mentioned drive system can be using cylinder system, hydraulic system etc..

The bottom of above-mentioned wafer carrying platform is provided with chiller.

Above-mentioned elastomeric material can be using silica gel, rubber etc..

This utility model has following technique effect：

In wafer adhesion process, contact surface is extended from center to surrounding, is finally reached lower platen bottom and wafer Whole plane forms face contact, and can guarantee that whole interface pressure is consistent, so that wafer and base plate bonding, have prevented bubble Generation.

Based on this utility model, binding agent can coat thinner, the integral thickness deviation reduction of wafer, reduction after bonding Sliver, improves yield；The reduction of the thickness deviation, advantageously ensures that light spot shape and light-out effect, while being also beneficial to core The encapsulation in piece later stage, and the radiating effect of encapsulated device.

Description of the drawings

Fig. 1 is structural representation of the present utility model.

View when Fig. 2 is closed for the upper and lower chamber of bind cavity.

Lower platen schematic diagram when Fig. 3 is non-gas injection.

Fig. 4 is the lower platen schematic diagram after gas injection.

Drawing reference numeral explanation：

1- bind cavity lower chambers；2- slide holders；The breathers of 3- second；4- bind cavities upper chamber；5- cylinder systems；6- first Breather；7- lower platens.

Specific embodiment

As shown in figure 1, bonding chamber is made up of upper and lower two parts, upper chamber connects with cylinders, in wafer adhesion process, Cylinder promotes upper chamber descending, chamber is bonded after closing with lower chambers and forms confined space.

In epicoele room, centre is provided with sphere lower platen, the lower platen be by the material with certain elasticity such as Silica gel is processed.Hollow airtight cavity (as shown in Figure 2), the top of upper chamber are formed between sphere lower platen and upper chamber top Portion is provided with the first breather.The sphere top of lower platen forms point and contacts (such as with the centre of wafer first when cylinder is descending Shown in Fig. 3), cylinder by the first breather at the top of bind cavity upper chamber is passed through compressed air afterwards in place, makes lower platen cavity Extended from center to surrounding with the contact surface of wafer, be finally reached lower platen bottom and contact with the whole plane formation face of wafer (as shown in Figure 4), and can guarantee that whole interface pressure is consistent, so that wafer and base plate bonding.

Wafer carrying platform is provided with bottom chamber, the bottom of plummer is provided with chiller, is provided with the side wall of lower chambers Breather is used to connect vacuum generating system, and the system starts evacuation after upper and lower chamber closure, is in bonding within the chamber Negative pressure state, unnecessary air, paraffin etc. can in time be discharged in the case where pressure and negative pressure are acted on simultaneously between wafer and substrate, so as to keep away Exempt from that paraffin layer is blocked up and generation of bubble.

The hard paraffin of embodiment one

1) substrate is put on hot plate, then paraffin is applied on substrate；

2) wafer and baseplate-laminating are then placed on the plummer of bonding chamber after paraffin melts completely；

3) the upper and lower chamber closure of bind cavity is exercised under cylinder；

4) pressure is passed through into spherical lower platen cavity by the breather of bind cavity upper chamber while upper and lower chamber is closed Contracting air, while starting vacuum generating system；

5) after 4min；

6) after paraffin solidification, compressed air is passed through by the breather of lower chambers, cylinder is up, by the wafer after bonding Take out.

The fluid binder of embodiment two

1) liquid adhesive is coated on substrate；

2) by wafer and baseplate-laminating, it is then placed on the plummer of bonding chamber；

4) pressure is passed through into spherical lower platen cavity by the breather of bind cavity upper chamber while upper and lower chamber is closed Contracting air, starts vacuum generating system and cooling system；

5) after to be bonded dose of solidification, compressed air is passed through by the breather of lower chambers, cylinder is up, by the crystalline substance after bonding Circle takes out.

Claims

1. a kind of device for wafer paster, including drive system and bonding chamber, wherein bonding chamber is mainly by upper chamber Constitute with lower chambers, bottom chamber is provided with wafer carrying platform, is provided with epicoele room corresponding with the wafer carrying platform Lower platen；In wafer adhesion process, drive system promotes upper chamber descending, and after closing with lower chambers confined space is formed；It is special Levy and be：The lower platen is spherical structure and to adopt elastomeric material, forms hollow closed between lower platen and upper chamber top Cavity, upper chamber is provided with the first breather so that form described in the presence of gas is passed through after the confined space pushing Plate pushes to the periphery extension and finally forms face contact to the whole plane of wafer from central point contact start.

2. the device for wafer paster according to claim 1, it is characterised in that：The bonding chamber is additionally provided with the Two breathers are used to connect vacuum generating system.

3. the device for wafer paster according to claim 2, it is characterised in that：Second breather is located at cavity of resorption The side wall of room.

4. the device for wafer paster according to claim 1, it is characterised in that：The drive system adopts cylinder system System or hydraulic system.

5. the device for wafer paster according to claim 1, it is characterised in that：The bottom of the wafer carrying platform sets It is equipped with chiller.

6. the device for wafer paster according to claim 1, it is characterised in that：The elastomeric material is silica gel or rubber Glue.