TW202145322A - Sheet peeling method and sheet peeling device including the sheet-abutting step, the adhered object supporting step, and the sheet pulling step - Google Patents
Sheet peeling method and sheet peeling device including the sheet-abutting step, the adhered object supporting step, and the sheet pulling step Download PDFInfo
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
- B65H29/00—Delivering or advancing articles from machines; Advancing articles to or into piles
- B65H29/54—Article strippers, e.g. for stripping from advancing elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
- B65H41/00—Machines for separating superposed webs
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- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
- B65H2301/00—Handling processes for sheets or webs
- B65H2301/50—Auxiliary process performed during handling process
- B65H2301/51—Modifying a characteristic of handled material
- B65H2301/511—Processing surface of handled material upon transport or guiding thereof, e.g. cleaning
- B65H2301/5112—Processing surface of handled material upon transport or guiding thereof, e.g. cleaning removing material from outer surface
- B65H2301/51122—Processing surface of handled material upon transport or guiding thereof, e.g. cleaning removing material from outer surface peeling layer of material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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Abstract
Description
本發明有關於薄片剝離方法以及薄片剝離裝置。The present invention relates to a sheet peeling method and a sheet peeling device.
現存已知將使複數凸部的頂點抵接的黏著薄片牽引到凸部形成面,從被黏體貼附於黏著薄片之一體物將該黏著薄片剝離的薄片剝離方法(例如,參照文獻1:日本特開平4-192348號公報)。 在文獻1所記載的膠帶晶片的剝離方法(薄片剝離方法)中,有著將覆蓋於具有複數凸部(凸部)的吸台1之上側面(凸部形成面)的晶圓片5(黏著薄片)牽引到凸部形成面,從晶片6(被黏體)貼附於黏著薄片的一體物將該黏著薄片剝離時,引發被黏體位置偏移這類問題。There is known a sheet peeling method in which an adhesive sheet that abuts the vertices of a plurality of convex portions is pulled to the convex portion forming surface, and the adhesive sheet is peeled off from an object that is adhered to the adhesive sheet (for example, refer to Document 1: Japan Japanese Patent Laid-Open No. 4-192348). In the tape wafer peeling method (sheet peeling method) described in Document 1, there is a wafer 5 (adhesion) to be covered on the upper side surface (convex portion forming surface) of the suction table 1 having a plurality of convex portions (convex portions). When the wafer 6 (adhesive body) is pulled to the convex portion forming surface, and the adhesive sheet is peeled off from the integrated body in which the wafer 6 (adhesive body) is attached to the adhesive sheet, the problem of positional displacement of the adhesive body occurs.
本發明的目地在於:提供可以防止從被黏體貼附於黏著薄片的一體物將黏著薄片剝離時,引發被黏體位置偏移之情形的薄片剝離方法以及薄片剝離裝置。 本發明採用請求項所記載的構造。 依據本發明,由於以被黏體支撐手段來支撐被黏體,並藉由該被黏體支撐手段與使複數凸部的頂點抵接的薄片抵接手段來將一體物夾入,因而可以防止從被黏體貼附於黏著薄片的一體物將黏著薄片剝離時,引發被黏體位置偏移的情形。 另外,若實施氣體供給步驟的話,藉著將黏著薄片牽引到凸部形成面時,在黏著薄片和被黏體支撐手段之間產生負壓,可以抑制黏著薄片被拉往被黏體支撐手段側的情形,從一體物確實地剝離黏著薄片。An object of the present invention is to provide a sheet peeling method and a sheet peeling device that can prevent the position of the adherend from being displaced when the adhesive sheet is peeled off from the integrated object in which the adherend adheres to the adhesive sheet. The present invention adopts the structure described in the claim. According to the present invention, since the adherend is supported by the adherend supporting means, and the integrated body is sandwiched by the adherend supporting means and the sheet abutting means for abutting the apexes of the plurality of convex portions, it is possible to prevent the When the adhesive sheet is peeled off from the integrated object in which the adherend is attached to the adhesive sheet, the position of the adherend is displaced. In addition, when the gas supply step is performed, when the adhesive sheet is pulled to the convex portion forming surface, a negative pressure is generated between the adhesive sheet and the adherend supporting means, so that the adhesive sheet can be suppressed from being pulled toward the adherend supporting means. In the case of , the adhesive sheet is surely peeled off from the one-piece body.
以下,將本發明的一個實施方式根據圖1A至圖2C進行說明。
此外,本實施方式之X軸、Y軸、Z軸,分別位於正交的關係,X軸及Y軸,作為既定平面內的軸,Z軸,作為正交於前述既定平面的軸。並且,在本實施方式中,在將從與Y軸平行之圖1A的近側方向觀看之情況下為基準,且表示方向的情況下,「上」為Z軸的箭頭方向且「下」為其相反方向,「左」為X軸的箭頭方向且「右」為其相反方向,「前」為與Y軸平行的圖1A中近側方向且「後」為其相反方向。
本發明的薄片剝離裝置EA是將黏著薄片AS從作為被黏體的晶片CP貼附於黏著薄片AS之一體物UP剝離的裝置,具備:薄片抵接手段10,具有形成複數凸部12A的凸部形成面12B;被黏體支撐手段20,支撐一體物UP之晶片CP,並與藉由使複數凸部12A的頂點12C抵接於黏著薄片AS的薄片抵接手段10來將一體物UP夾入;薄片牽引手段30,將夾入的一體物UP之黏著薄片AS牽引到凸部形成面12B;以及氣體供給手段40,以薄片抵接手段10和被黏體支撐手段20來將一體物UP夾入時,在黏著薄片AS和被黏體支撐手段20之間供給空氣及氣體等的氣體,配置於將張力施加於黏著薄片AS,將複數晶片CP的相互間隔加大之分離手段50的附近。
薄片抵接手段10,具備:線性馬達11,作為驅動機器;以及保持構件12,受到線性馬達11的未圖示之滑動件支撐。
保持構件12,具備:凸部形成面12B;環狀的槽部12D,將凸部形成面12B區隔於內側;以及環狀的密封部12E,被區隔於槽部12D的外側,以密封材、海棉、橡膠、樹脂等的密封構件所形成。凸部形成面12B之凸部12A,配置成格子圖案,並且其前端為平面。
被黏體支撐手段20具備支撐盤21,該支撐盤21受到線性馬達11的未圖示之滑動件支撐,且具有可藉由真空泵及真空抽氣器等的未圖示之減壓手段吸持的支撐面21A。
支撐盤21的大小,在俯視比凸部形成面12B的內徑更小。
薄片牽引手段30,具備:減壓手段31,是真空泵及真空抽氣器等;以及吸引孔32,設置於保持構件12,經由配管31A將減壓手段31和槽部12D連通。
氣體供給手段40,具備連接於增壓泵及渦輪等未圖示之加壓手段的噴嘴41。
分離手段50,具備:複數直線型馬達51,作為驅動機器;以及把持手段52,是受到各直線型馬達51的輸出軸51A支撐,且將黏著薄片AS的端部予以把持的機械式夾盤及吸盤圓筒等。
說明以上的薄片剝離裝置EA的動作。
首先,當該薄片剝離裝置EA的使用者(以下,簡稱為「使用者」),或多關節機械人及帶式輸送機等的未圖示之搬運手段,對於各構件配置於在圖1A表示的初期位置的薄片剝離裝置EA,將貼附半導體晶圓(以下,也簡稱為「晶圓」)WF的黏著薄片AS搬運至保持構件12和支撐盤21之間的既定位置時,分離手段50驅動直線型馬達51及把持手段52,以把持手段52將黏著薄片AS予以把持。此外,晶圓WF,以雷射照射裝置及藥液施加裝置等的脆弱化手段在晶圓WF物理性或化學性形成脆弱層,或以切割刀等的切斷手段將晶圓WF半切斷來形成凹槽及缺口,成為可分割成複數晶片CP的狀態。接下來,分離手段50驅動直線型馬達51,如圖1A中以雙虛鏈線表示般,藉著將張力施加於黏著薄片AS而將晶圓WF分割成複數晶片CP,形成晶片CP貼附於黏著薄片AS的一體物UP,並且將該複數晶片CP的相互間隔加大(分離步驟)。
其後,薄片抵接手段10及被黏體支撐手段20驅動線性馬達11,如圖2A所示般,使保持構件12和支撐盤21接近,使複數凸部12A的頂點12C抵接於一體物UP的黏著薄片AS(薄片抵接步驟),並且以保持構件12和支撐盤21將一體物UP夾入,以支撐面21A支撐晶片CP(被黏體支撐步驟)。此時,晶片CP,如圖1B中以雙虛鏈線表示般,藉由凸部12A的頂點12C以複數點(在本實施方式中為3點)來支撐。
接著,薄片牽引手段30驅動減壓手段31,將在黏著薄片AS和凸部形成面12B之間形成的空間予以減壓且開始以凸部形成面12B來吸持黏著薄片AS,如圖2B所示般,將黏著薄片AS牽引到凸部形成面12B(薄片牽引步驟)。藉此,黏著薄片AS跟隨凸部形成面12B的凹凸而變形,從晶片CP被部分剝離。
而且,被黏體支撐手段20驅動未圖示的減壓手段,開始以支撐面21A之晶片CP的吸持後,氣體供給手段40驅動未圖示的加壓手段,如圖2B以箭頭表示般,在跟隨凸部形成面12B的凹凸的黏著薄片AS和支撐面21A之間供給氣體(氣體供給步驟)。藉此,在薄片牽引步驟將黏著薄片AS牽引到凸部形成面12B時,藉著在黏著薄片AS和支撐面21A之間產生負壓,抑制黏著薄片AS被拉往支撐面21A側的情形,維持黏著薄片AS從晶片CP剝離的狀態。
接下來,被黏體支撐手段20驅動線性馬達11,如圖2C所示般,使支撐盤21復歸於初期位置後,將未圖示之減壓手段的驅動停止,解除以支撐面21A之晶片CP的吸持。其後,黏著薄片AS被剝離的晶片CP,為了製造具備該晶片CP的半導體裝置,所以藉由使用者或未圖示的搬運手段而從支撐面21A搬運,且積層於未圖示的引線框架及基板等(積層步驟)。
接著,薄片牽引手段30將減壓手段31的驅動停止,解除以凸部形成面12B吸持黏著薄片AS後,薄片抵接手段10驅動線性馬達11,使保持構件12復歸於初期位置。而且,當分離手段50驅動把持手段52,解除以把持手段52的黏著薄片AS的把持時,使用者或未圖示的搬運手段,將已剝離晶片CP的黏著薄片AS回收於箱及袋等的未圖示之回收手段(回收步驟),以後重覆上述同樣的步驟。
依據如上述般的實施方式,由於以被黏體支撐手段20來支撐晶片CP,並藉由該被黏體支撐手段20與使複數凸部12A的頂點12C抵接的薄片抵接手段10來將一體物UP夾入,因而可以防止將黏著薄片AS從晶片CP貼附於黏著薄片AS的一體物UP剝離時,引發晶片CP位置偏移的情形。
如上述般,用於實施本發明的最佳構成、方法等,雖於前述記載中揭示,但本發明未限定於此。換言之,本發明,雖有關於主要特定的實施方式特別加以圖示,且進行說明,但對於不偏離本發明的技術思想及目地範圍,且以上所述的實施方式,在形狀、材質、數量、其他詳細的構成中,本領域技術人員可以施加各種變形。另外,上述所揭示之限定形狀、材質等的記載,是為了容易理解本發明所例示性記載之敘述,由於並非用來限定本發明,因而以那些形狀、材質等之限定的一部分或移除全部限定之構件的名稱的記載,被包含在本發明。
例如,薄片抵接手段10,也可以藉獨立於被黏體支撐手段20的驅動機器來使保持構件12移動,也可以一邊不使保持構件12移動地或使其移動,一邊使分離手段50移動來使複數凸部12A的頂點12C抵接於黏著薄片AS。
被黏體支撐手段20,可以藉獨立於薄片抵接手段10的驅動機器來使支撐盤21移動,也可以一邊不使保持構件12移動地或使其移動,一邊使支撐盤21及分離手段50移動,以與薄片抵接手段10將一體物UP夾入來支撐晶片CP,或者不使支撐盤21移動地且使保持構件12及分離手段50移動,以與薄片抵接手段10將一體物UP夾入來支撐晶片CP。
薄片牽引手段30,可以藉庫倫力、磁力、伯努利吸附等將黏著薄片AS牽引到凸部形成面12B,取代或併用將黏著薄片AS和凸部形成面12B之間的空間予以減壓而將黏著薄片AS牽引到凸部形成面12B的方式,也可以藉著從支撐面21A往黏著薄片AS噴附氣體,將黏著薄片AS牽引到凸部形成面12B,或以線圈加熱器及熱導管等之加熱側等的加熱手段來將黏著薄片AS加熱,或以帕耳帖元件及熱導管的冷卻側等的冷卻手段來將黏著薄片AS冷卻。
也可以在本發明的薄片剝離裝置EA設置氣體供給手段40,或不設置。
分離手段50,可以預先將分割的複數晶片CP的相互間隔加大,於黏著薄片AS,例如,可以朝上下方向施加張力;或者朝右方、左方、前方及後方的4方向,右方及左方的2方向,左前方、左後方及右方的3方向,或包含前後左右方向的成分之5方向以上施加張力,以加大晶片CP的相互間隔,可以藉由多關節機械人等的驅動機器,使分離手段50和支撐盤21相對移動來將張力施加於黏著薄片AS,藉此加大晶片CP的相互間隔,也可以在使用經由黏著薄片AS來與晶圓WF或晶片CP成為一體化的環狀框架等之框架構件的情況下,以分離手段50來支撐框架構件,使分離手段50和支撐盤21相對移動來將張力施加於黏著薄片AS,藉此加大晶片CP的相互間隔。
分離手段50,也可以設置在本發明的薄片剝離裝置EA,或不設置,在不設置的情況下,使用預先複數晶片CP在互相加大間隔的狀態貼附於黏著薄片AS的一體物UP即可。
薄片剝離裝置EA,可以設有將黏著薄片AS以壓輥等的押壓手段貼附於晶圓WF或晶片CP的貼附手段,或設有將晶圓WF研削來減少該晶圓WF的厚度的研削手段,也可以設有將晶圓WF或晶片CP與框架構件經由黏著薄片AS成為一體化的一體化手段。
框架構件,除了環狀框架以外,也可以是非環狀(外周未相連接)構件,或圓形、橢圓形、多角形、其他的形狀。
積層步驟及回收步驟,也可以實施或不實施。
本發明之手段及步驟,只要可以完成針對那些手段及步驟進行說明的動作、功能或步驟則無任何限定,更何況,完全不限定於在前述實施方式揭示的單純一個實施方式的構成物及步驟。例如,薄片抵接步驟,只要是使具有形成複數凸部之凸部形成面的薄片抵接手段之該複數凸部的頂點,抵接於一體物之黏著薄片的步驟的話,對照申請當初的技術常識,只要是其技術範圍內的話無任何限定(其他的手段及步驟也相同)。
黏著薄片AS及被黏體的材質、種別、形狀等,未特別限定。例如,黏著薄片AS及被黏體,也可以是圓形、橢圓形、三角形及四角形等的多角形、其他的形狀,黏著薄片AS也可以是壓敏接著性、熱敏接著性等的接著形態。另外,如此般的黏著薄片AS,例如,也可以是僅接著劑層的單層的薄片、在基材和接著劑層之間具有中間層的薄片、在基材的上側面具有覆蓋層等3層以上的薄片、甚至是可以將基材從接著劑層剝離的所謂雙面黏著薄片般的薄片,雙面黏著薄片也可以是具有單層或複層的中間層的薄片,及無中間層的單層或複層的薄片。另外,就被黏體而言,例如,可以是食品、樹脂容器、矽半導體晶圓及化合物半導體晶圓等的半導體晶圓、回路基板、光碟等的資訊記錄基板、玻璃板、鋼板、陶器、木板或樹脂等的單質物,也可以是以那些兩個以上形成的複合物,任意形態的構件及物品等也可以作為對象。此外,黏著薄片AS,也可以換成功能性、用途性的讀法,例如,資訊記載用標籤、裝飾用標籤、保護薄片、切割膠帶、固晶膜、固晶膠帶、記錄層形成樹脂薄片等的任意薄片、薄膜、膠帶等。
前述實施方式之驅動機器,不但可以採用轉動馬達、直線型馬達、線性馬達、單軸機械人、具備2軸或3軸以上關節的多關節機械人等的電動機器、氣缸、油壓缸、無桿氣缸及旋轉氣缸等的致動器等,還可以採用將這些直接地或間接地組合的機器。
在前述實施方式中,採用壓輥及壓頭等的押壓手段及押壓構件這類將被押壓物進行押壓之構件的情況下,也可以採用輥、圓棒、片材、橡膠、樹脂、海棉等的構件,以取代或併用在上述所例示的構件,或採用藉由空氣及氣體等的氣體之噴附進行押壓的構造,也可以將押壓的構件以橡膠及樹脂等可變形的構件來構成,也可以由不變形的構件來構成,採用支撐(保持)手段及支撐(保持)構件等的支撐(保持)被支撐構件(被保持構件)之構件的情況下,也可採用以機械式夾盤及吸盤圓筒等的把持手段、庫倫力、接著劑(接著薄片、接著膠帶)、黏著劑(黏著薄片、黏著膠帶)、磁力、伯努利吸附、吸引吸附、驅動機器等來支撐(保持)被支撐構件的構成,採用切斷手段及切斷構件等將被切斷構件切斷,或在被切斷構件形成切痕及切斷線的情況下,也可以採用藉切割刀、雷射切割器、離子束、火力、熱、水壓、電熱線、氣體及液體等的噴附等來進行切斷的構件,以取代或併用在上述所例示的構件,或以將適當的驅動機器組合而成的構件來使進行切斷的構件移動且進行切斷。Hereinafter, one embodiment of the present invention will be described with reference to FIGS. 1A to 2C .
In addition, the X-axis, Y-axis, and Z-axis of this embodiment are in an orthogonal relationship, respectively. The X-axis and the Y-axis are axes in a predetermined plane, and the Z-axis is an axis that is orthogonal to the predetermined plane. In addition, in the present embodiment, when viewed from the proximal direction of FIG. 1A parallel to the Y-axis as a reference, and when indicating directions, "up" is the arrow direction of the Z-axis and "down" is The opposite directions, "left" is the arrow direction of the X-axis and "right" is the opposite direction, "front" is the proximal direction in Fig. 1A parallel to the Y-axis and "rear" is the opposite direction.
The sheet peeling apparatus EA of the present invention is an apparatus for peeling off the adhesive sheet AS from the wafer CP, which is an adherend, to an object UP, which is one of the adhesive sheets AS, and includes sheet contact means 10 having protrusions forming a plurality of
5:晶圓片
6:晶片(被黏體)
10:薄片抵接手段
11:線性馬達
12:保持構件
12A:凸部
12B:凸部形成面
12C:凸部的頂點
12D:槽部
12E:密封部
20:被黏體支撐手段
21:支撐盤
21A:支撐面
30:薄片牽引手段
31:減壓手段
31A:配管
32:吸引孔
40:氣體供給手段
41:噴嘴
50:分離手段
51:直線型馬達
51A:輸出軸
52:把持手段
AS:黏著薄片
CP:晶片
EA:薄片剝離裝置
WF:晶圓
UP:一體物5: Wafer
6: Wafer (bonded body)
10: Sheet abutting means
11: Linear motor
12:
[圖1A]是實施本發明之一個實施方式所涉及的薄片剝離方法之薄片剝離裝置的說明圖。 [圖1B]是實施本發明之一個實施方式所涉及的薄片剝離方法之薄片剝離裝置的說明圖。 [圖2A]是薄片剝離方法的說明圖。 [圖2B]是薄片剝離方法的說明圖。 [圖2C]是薄片剝離方法的說明圖。It is explanatory drawing of the sheet peeling apparatus which implements the sheet peeling method which concerns on one Embodiment of this invention. 1B is an explanatory diagram of a sheet peeling apparatus that implements the sheet peeling method according to one embodiment of the present invention. [ Fig. 2A ] An explanatory diagram of a sheet peeling method. [ Fig. 2B ] An explanatory diagram of a sheet peeling method. [ Fig. 2C ] An explanatory diagram of a sheet peeling method.
10:薄片抵接手段 10: Sheet abutting means
11:線性馬達 11: Linear motor
12:保持構件 12: Hold Components
12A:凸部 12A: convex part
12B:凸部形成面 12B: convex part forming surface
12C:凸部的頂點 12C: Vertex of the convex part
12D:槽部 12D: Groove
12E:密封部 12E: Sealing part
20:被黏體支撐手段 20: Supported by the sticky body
21:支撐盤 21: Support plate
21A:支撐面 21A: Support surface
30:薄片牽引手段 30: Sheet pulling means
31:減壓手段 31: Decompression means
31A:配管 31A: Piping
32:吸引孔 32: Attraction holes
40:氣體供給手段 40: Gas supply means
41:噴嘴 41: Nozzle
50:分離手段 50: Separation Means
51:直線型馬達 51: Linear motor
51A:輸出軸 51A: output shaft
52:把持手段 52: Holding Means
AS:黏著薄片 AS: Adhesive Sheet
CP:晶片 CP: Wafer
EA:薄片剝離裝置 EA: Flake peeling device
WF:晶圓 WF: Wafer
UP:一體物 UP: One thing
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JP2020029159A JP7421950B2 (en) | 2020-02-25 | 2020-02-25 | Sheet peeling method and sheet peeling device |
JP2020-029159 | 2020-02-25 |
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TW202145322A true TW202145322A (en) | 2021-12-01 |
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KR (1) | KR20210108320A (en) |
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