TWI746645B - Semiconductor device manufacturing method and semiconductor manufacturing device - Google Patents

Semiconductor device manufacturing method and semiconductor manufacturing device Download PDF

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TWI746645B
TWI746645B TW106132672A TW106132672A TWI746645B TW I746645 B TWI746645 B TW I746645B TW 106132672 A TW106132672 A TW 106132672A TW 106132672 A TW106132672 A TW 106132672A TW I746645 B TWI746645 B TW I746645B
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adhesive
semiconductor wafer
grinding
semiconductor
manufacturing
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TW201814847A (en
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三井貴彦
山本榮一
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日商岡本工作機械製作所股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/008—Machines comprising two or more tools or having several working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06—Dust extraction equipment on grinding or polishing machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06—Dust extraction equipment on grinding or polishing machines
    • B24B55/08—Dust extraction equipment on grinding or polishing machines specially designed for belt grinding machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Abstract

本發明提供半導體裝置的製造方法和半導體製造裝置，能使半導體晶片的厚度均勻並能在抑制端部崩碎的同時使半導體晶片薄化。半導體裝置的製造方法包括：在形成突出部的半導體晶片的表面塗布黏接劑的過程；磨削半導體晶片上塗布的黏接劑的表面的過程；將塗布有黏接劑的半導體晶片的周圍端部和黏接劑一起修邊的過程；將黏接劑的表面被磨削且周圍端部被修邊的半導體晶片借助黏接劑張貼到支撐基板的過程；以及磨削支撐基板上張貼的半導體晶片的背面的過程。可以使半導體晶片的厚度均勻，在抑制半導體晶片的端部崩碎的同時，使半導體晶片薄化。The present invention provides a method for manufacturing a semiconductor device and a semiconductor manufacturing device, which can make the thickness of the semiconductor wafer uniform and can reduce the thickness of the semiconductor wafer while suppressing the collapse of the end portion. The method of manufacturing a semiconductor device includes: applying an adhesive on the surface of the semiconductor wafer forming the protrusion; grinding the surface of the adhesive coated on the semiconductor wafer; and applying the adhesive to the peripheral end of the semiconductor wafer The process of trimming the surface of the adhesive together with the adhesive; the process of attaching the semiconductor wafer with the surface of the adhesive to be ground and the peripheral edge trimmed to the supporting substrate with the adhesive; and the process of grinding the semiconductor posted on the supporting substrate The process of the back side of the wafer. The thickness of the semiconductor wafer can be made uniform, and the semiconductor wafer can be thinned while suppressing the chipping of the end of the semiconductor wafer.

Description

半導體裝置的製造方法和半導體製造裝置Semiconductor device manufacturing method and semiconductor manufacturing device

本發明涉及半導體裝置的製造方法和半導體製造裝置。The present invention relates to a method of manufacturing a semiconductor device and a semiconductor manufacturing device.

以往，為了提高半導體裝置的集成率，通過對表面形成有電路等的半導體晶片的未形成有電路等的背面進行磨削，使半導體晶片薄化。此外，在包含層疊的多枚半導體晶片的三維安裝的半導體裝置的製造方法中，通過磨削形成有貫穿電極（TSV：Through Silicon Via）的半導體晶片的背面，使貫穿電極出頭已被公知。Conventionally, in order to increase the integration rate of semiconductor devices, the semiconductor wafer has been thinned by grinding the back surface of a semiconductor wafer on which a circuit or the like is formed on the back surface of the semiconductor wafer where no circuit or the like is formed. In addition, in a method of manufacturing a three-dimensionally mounted semiconductor device including a plurality of stacked semiconductor wafers, it is known to grind the back surface of a semiconductor wafer on which a through electrode (TSV: Through Silicon Via) is formed to make the through electrode protrude.

例如，日本專利公開公報特開2015-32679號中，記述了半導體裝置的製造方法。所述製造方法中的銅貫穿電極的出頭加工中，由杯形砂輪磨削形成有銅貫穿電極的矽基板的背面。這樣，矽和銅同時被除去。按照所述文獻所述的半導體裝置的製造方法，在磨削矽基板的背面前，採用黏接劑片材或黏接劑將矽基板的表面張貼在磨削裝置的基板卡盤上。For example, Japanese Patent Laid-Open Publication No. 2015-32679 describes a method of manufacturing a semiconductor device. In the tapping process of the copper through electrode in the manufacturing method, the back surface of the silicon substrate on which the copper through electrode is formed is ground by a cup-shaped grinding wheel. In this way, silicon and copper are removed at the same time. According to the semiconductor device manufacturing method described in the document, before grinding the back surface of the silicon substrate, the surface of the silicon substrate is stuck on the substrate chuck of the grinding device using an adhesive sheet or adhesive.

可是，上述現有技術這種在矽基板的表面張貼黏接劑片材等的方法中，為了通過使半導體晶片薄化而提高半導體裝置的集成率，存在需要改進的問題。However, in the above-mentioned prior art method of applying an adhesive sheet or the like on the surface of a silicon substrate, there is a problem that needs improvement in order to increase the integration rate of semiconductor devices by making the semiconductor wafer thinner.

具體而言，有時半導體晶片的表面形成凸出等突出部。此時，受到所述突出部的影響，在半導體晶片的表面張貼的黏接劑片等的表面會產生凹凸。因此，將半導體晶片張貼到基板卡盤上後，磨削半導體晶片的背面時，存在出現半導體晶片的厚度不均的問題。Specifically, protrusions such as bumps may be formed on the surface of the semiconductor wafer. At this time, under the influence of the protruding portion, unevenness occurs on the surface of the adhesive sheet or the like that is applied to the surface of the semiconductor wafer. Therefore, after the semiconductor wafer is placed on the substrate chuck, when the back surface of the semiconductor wafer is ground, there is a problem of uneven thickness of the semiconductor wafer.

這樣，出現半導體晶片的厚度不均，成為半導體裝置的品質降低的要因。特別是，這種情況在三維安裝的半導體裝置中，存在引起各層間的接點不良的危險。按照現有技術的製造方法，難以在抑制半導體晶片的厚度不均的同時進一步實現薄化。因此，開發將半導體晶片的背面均勻磨削的技術，成為提高半導體裝置的集成率上的課題。In this way, unevenness in the thickness of the semiconductor wafer occurs, which becomes a factor in the deterioration of the quality of the semiconductor device. In particular, in this case, in a three-dimensionally mounted semiconductor device, there is a risk of causing poor contact between the layers. According to the manufacturing method of the prior art, it is difficult to further reduce the thickness of the semiconductor wafer while suppressing unevenness in the thickness of the semiconductor wafer. Therefore, the development of a technique for uniformly grinding the back surface of a semiconductor wafer has become a problem in increasing the integration rate of semiconductor devices.

此外，為使半導體晶片的厚度均勻，可以考慮以下的手法。即，在磨削中測定半導體晶片的厚度等。根據其測定結果，改變砂輪與半導體晶片的接觸方法等。可是，所述手法需要測定半導體晶片的厚度的裝置，以及在高度上調整砂輪的位置的裝置等。因此，磨削裝置造價昂貴。In addition, in order to make the thickness of the semiconductor wafer uniform, the following technique can be considered. That is, the thickness of the semiconductor wafer and the like are measured during grinding. Based on the measurement results, the contact method between the grinding wheel and the semiconductor wafer was changed. However, the above method requires a device for measuring the thickness of the semiconductor wafer, a device for adjusting the position of the grinding wheel in height, and the like. Therefore, the grinding device is expensive to manufacture.

此外，背面磨削前的半導體晶片的周圍端部附近，存在薄壁的部分。所述部分例如是倒圓的邊緣部以及形成傾斜的端面。因此，磨削半導體晶片的背面時，半導體晶片的周圍端部附近，形成比其他部分薄的部位。因此，存在容易發生端部的崩碎即崩裂的問題。In addition, there is a thin portion near the peripheral end of the semiconductor wafer before back grinding. The parts are, for example, rounded edges and inclined end faces. Therefore, when the back surface of the semiconductor wafer is ground, the vicinity of the peripheral end of the semiconductor wafer is formed to be thinner than other parts. Therefore, there is a problem that chipping or chipping of the ends easily occurs.

鑒於上述問題，本發明的一個目的是提供半導體裝置的製造方法和半導體製造裝置，使半導體晶片的厚度均勻，並且在抑制端部崩碎的同時使半導體晶片薄化。In view of the above-mentioned problems, an object of the present invention is to provide a semiconductor device manufacturing method and a semiconductor manufacturing apparatus that make the thickness of a semiconductor wafer uniform and suppress end chipping while reducing the thickness of the semiconductor wafer.

本發明的一個方式的半導體裝置的製造方法（本製造方法）包括：在形成突出部的半導體晶片的表面塗布黏接劑的過程；磨削所述半導體晶片上塗布的所述黏接劑的表面的過程；將塗布有所述黏接劑的所述半導體晶片的周圍端部和所述黏接劑一起修邊的過程；將所述黏接劑的表面被磨削且所述周圍端部被修邊的所述半導體晶片借助所述黏接劑張貼到支撐基板的過程；以及磨削所述支撐基板上張貼的所述半導體晶片的背面的過程。A method of manufacturing a semiconductor device according to one aspect of the present invention (this manufacturing method) includes: applying an adhesive to the surface of a semiconductor wafer forming a protrusion; and grinding the surface of the adhesive applied on the semiconductor wafer The process; the process of trimming the peripheral end of the semiconductor wafer coated with the adhesive and the adhesive together; the surface of the adhesive is ground and the peripheral end is A process in which the trimmed semiconductor wafer is posted to a supporting substrate with the aid of the adhesive; and a process in which the backside of the semiconductor wafer posted on the supporting substrate is ground.

此外，本發明的一個方式的半導體製造裝置（本製造裝置）包括：工作盤，吸附保持表面具有突出部且所述表面塗布有黏接劑的半導體晶片；黏接劑磨削工具，磨削吸附保持在所述工作盤上的所述半導體晶片的所述黏接劑的表面；以及研磨帶，將吸附保持在所述工作盤上的所述半導體晶片的周圍端部和所述黏接劑一起修邊。In addition, a semiconductor manufacturing apparatus (this manufacturing apparatus) according to an aspect of the present invention includes: a work plate that adsorbs and holds a semiconductor wafer having a protrusion on a surface and an adhesive is coated on the surface; an adhesive grinding tool, and a grinding suction tool The surface of the adhesive of the semiconductor wafer held on the work plate; and a polishing tape that adsorbs and holds the peripheral end of the semiconductor wafer on the work plate together with the adhesive Trimming.

本製造方法具備在形成突出部的半導體晶片的表面塗布黏接劑的過程，以及磨削所述半導體晶片上塗布的所述黏接劑的表面的過程。這樣，可以使塗布的黏接劑的表面平坦。而且，可以使黏接劑層的厚度均勻。因此，能夠將背面磨削後的半導體晶片的厚度高精度統一。The manufacturing method includes a process of applying an adhesive on the surface of a semiconductor wafer forming a protrusion, and a process of grinding the surface of the adhesive applied on the semiconductor wafer. In this way, the surface of the applied adhesive can be made flat. Moreover, the thickness of the adhesive layer can be made uniform. Therefore, the thickness of the semiconductor wafer after the back surface grinding can be uniformized with high accuracy.

此外，本製造方法具備將塗布有所述黏接劑的所述半導體晶片的周圍端部和所述黏接劑一起修邊的過程。這樣，可以除去半導體晶片的周圍端部附近的圓角和傾斜。因此，可以抑制將半導體晶片薄化磨削時的端部附近的崩裂。此外，塗布黏接劑後，對半導體晶片的周圍端部修邊。這樣，可以將黏接劑的端部和半導體晶片的周圍端部一起修邊。因此，可以除去黏接劑層的端部附近的圓角。因此，能夠使黏接劑層的厚度均勻。其結果，可以抑制半導體晶片的端部附近變薄。In addition, the manufacturing method includes a process of trimming the peripheral end of the semiconductor wafer coated with the adhesive and the adhesive together. In this way, round corners and inclination in the vicinity of the peripheral end of the semiconductor wafer can be removed. Therefore, it is possible to suppress chipping in the vicinity of the end portion when the semiconductor wafer is thinned and ground. In addition, after the adhesive is applied, the peripheral edge of the semiconductor wafer is trimmed. In this way, the end of the adhesive and the peripheral end of the semiconductor wafer can be trimmed together. Therefore, the rounded corners near the end of the adhesive layer can be removed. Therefore, the thickness of the adhesive layer can be made uniform. As a result, the thickness of the vicinity of the end of the semiconductor wafer can be suppressed.

此外，本製造方法具備將所述黏接劑的表面被磨削且周圍端部被修邊的所述半導體晶片借助所述黏接劑張貼到支撐基板的過程；以及磨削所述支撐基板上張貼的所述半導體晶片的背面的過程。這樣，本製造方法在半導體晶片上的黏接劑的表面被磨削，而且半導體晶片的周圍端部修邊後，將支撐基板張貼到半導體晶片上，磨削半導體晶片的背面。這樣，可以使半導體晶片的厚度均勻，並且抑制半導體晶片的破損。其結果，本製造方法能夠製造比現有技術的半導體晶片更薄且高品質的半導體晶片。In addition, the manufacturing method includes a process of attaching the semiconductor wafer with the surface of the adhesive to be ground and the peripheral edge trimmed to a supporting substrate via the adhesive; and grinding the supporting substrate The process of posting the backside of the semiconductor wafer. In this way, in this manufacturing method, the surface of the adhesive on the semiconductor wafer is ground, and after the peripheral end of the semiconductor wafer is trimmed, the support substrate is attached to the semiconductor wafer to grind the back surface of the semiconductor wafer. In this way, the thickness of the semiconductor wafer can be made uniform, and the damage of the semiconductor wafer can be suppressed. As a result, this manufacturing method can manufacture thinner and high-quality semiconductor wafers than conventional semiconductor wafers.

此外，本製造方法的磨削所述黏接劑的表面的過程，可以包括向磨削所述黏接劑的表面的黏接劑磨削工具吹拂清洗液。這樣，在用清洗液將黏接劑磨削工具上附著的黏接劑的切削屑除去的同時，可以由黏接劑磨削工具磨削黏接劑。因此，可以使黏接劑的表面高精度且容易磨削。In addition, the process of grinding the surface of the adhesive in the manufacturing method may include blowing a cleaning solution on an adhesive grinding tool that grinds the surface of the adhesive. In this way, while the cutting debris of the adhesive attached to the adhesive grinding tool is removed with the cleaning fluid, the adhesive can be ground by the adhesive grinding tool. Therefore, the surface of the adhesive can be made highly accurate and easy to grind.

此外，按照本製造方法，可以向所述黏接劑磨削工具的從所述黏接劑的表面分離的砂輪的刃尖吹拂所述清洗液。這樣，抑制了黏接劑的切削屑再次附著到黏接劑的表面。其結果，能使黏接劑的表面平坦且高精度加工黏接劑層的厚度。In addition, according to the manufacturing method, the cleaning liquid can be blown onto the edge of the grinding wheel separated from the surface of the adhesive of the adhesive grinding tool. In this way, cutting chips of the adhesive are prevented from being attached to the surface of the adhesive again. As a result, the surface of the adhesive can be made flat and the thickness of the adhesive layer can be processed with high precision.

此外，按照本製造方法，優選所述半導體晶片具有貫穿電極，磨削所述半導體晶片的背面的過程，同時磨削所述半導體晶片和所述貫穿電極。這樣，可以同時高效進行半導體晶片的薄化過程和貫穿電極的出頭過程。而且，不僅可以使半導體晶片的厚度均勻統一，還可以使半導體晶片上形成的貫穿電極的高度均勻統一。In addition, according to the manufacturing method, it is preferable that the semiconductor wafer has a through electrode, and the process of grinding the back surface of the semiconductor wafer is performed while grinding the semiconductor wafer and the through electrode. In this way, the thinning process of the semiconductor wafer and the tapping process of the penetrating electrode can be performed efficiently at the same time. Moreover, not only the thickness of the semiconductor wafer can be made uniform, but also the height of the through electrodes formed on the semiconductor wafer can be made uniform.

此外，此時優選磨削所述半導體晶片的背面的過程，包括向磨削所述半導體晶片的背面的晶片磨削工具吹拂清洗液。通過向晶片磨削工具吹拂清洗液，可以抑制半導體晶片的污染。因此，能夠高效高品質製造具有高集成率的小型三維安裝的半導體裝置。In addition, at this time, it is preferable that the process of grinding the back surface of the semiconductor wafer includes blowing a cleaning liquid on a wafer grinding tool grinding the back surface of the semiconductor wafer. By blowing the cleaning liquid on the wafer grinding tool, contamination of the semiconductor wafer can be suppressed. Therefore, a small, three-dimensionally mounted semiconductor device with a high integration rate can be manufactured efficiently and with high quality.

此外，本製造裝置包括：工作盤，吸附保持表面具有突出部且所述表面塗布有黏接劑的半導體晶片；黏接劑磨削工具，磨削吸附保持在所述工作盤上的所述半導體晶片的所述黏接劑的表面；以及研磨帶，將吸附保持在所述工作盤上的所述半導體晶片的周圍端部和所述黏接劑一起修邊。這樣，通過一個裝置，可以有效進行對半導體晶片的表面上塗布的黏接劑的表面的磨削，以及半導體晶片的周圍端部的修邊。因此，不僅能提高將半導體晶片高精度薄化的製造方法中的生產效率，還可以抑制設備費用的增加。In addition, the manufacturing apparatus includes: a work plate that adsorbs and holds a semiconductor wafer with a protrusion on the surface and an adhesive coated on the surface; an adhesive grinding tool that grinds the semiconductor wafer held on the work plate by adsorption The surface of the adhesive of the wafer; and a polishing tape for trimming the peripheral end of the semiconductor wafer that is adsorbed and held on the working plate and the adhesive together. In this way, with one device, grinding of the surface of the adhesive applied on the surface of the semiconductor wafer and trimming of the peripheral end of the semiconductor wafer can be effectively performed. Therefore, not only can the production efficiency in the manufacturing method of thinning the semiconductor wafer with high precision be improved, but also the increase in equipment cost can be suppressed.

此外，優選本製造裝置還具備向所述黏接劑磨削工具吹拂清洗液的清洗液噴射裝置。這樣，可以高精度、高品質且容易磨削黏接劑的表面。In addition, it is preferable that the manufacturing apparatus further includes a cleaning liquid spraying device that blows a cleaning liquid to the adhesive grinding tool. In this way, the surface of the adhesive can be ground with high precision, high quality and easily.

以下，根據附圖具體說明本發明的實施方式的半導體裝置的製造方法和半導體製造裝置。Hereinafter, a method of manufacturing a semiconductor device and a semiconductor manufacturing apparatus according to an embodiment of the present invention will be described in detail based on the drawings.

圖1是表示本發明的實施方式的半導體裝置的製造過程的流程圖。所述流程圖具體涉及將表面10a（參照圖5A）上形成有電路的半導體晶片10（參照圖5A）薄化的過程。本實施方式的半導體裝置的製造方法，特別適合磨削表面10a上形成有突出部的半導體晶片10的背面10b（參照圖5A）。FIG. 1 is a flowchart showing a manufacturing process of a semiconductor device according to an embodiment of the present invention. The flowchart specifically relates to the thinning process of the semiconductor wafer 10 (refer to FIG. 5A) on which the circuit is formed on the surface 10a (refer to FIG. 5A). The manufacturing method of the semiconductor device of the present embodiment is particularly suitable for grinding the back surface 10b of the semiconductor wafer 10 having protrusions formed on the surface 10a (see FIG. 5A).

如圖1所示，本實施方式的半導體裝置的製造方法，具備電路形成過程S10、黏接劑塗布過程S20、黏接劑磨削過程S30、端部修邊過程S40、支撐基板張貼過程S50、背面磨削過程S60和支撐基板拆取過程S70。As shown in FIG. 1, the method of manufacturing a semiconductor device of this embodiment includes a circuit formation process S10, an adhesive coating process S20, an adhesive grinding process S30, an edge trimming process S40, and a supporting substrate attaching process S50. The back grinding process S60 and the supporting substrate removal process S70.

首先，在電路形成過程S10中，根據以往的方法，在半導體晶片10的表面10a形成電路。作為半導體晶片10，例如採用具有720μm至770μm的厚度的矽（Si）基板。此外，可以在半導體晶片10上形成貫穿電極。此時，貫穿電極通過電路形成過程S10形成。First, in the circuit formation process S10, a circuit is formed on the surface 10a of the semiconductor wafer 10 according to the conventional method. As the semiconductor wafer 10, for example, a silicon (Si) substrate having a thickness of 720 μm to 770 μm is used. In addition, through electrodes may be formed on the semiconductor wafer 10. At this time, the through electrode is formed through the circuit forming process S10.

接著，在黏接劑塗布過程S20中，向半導體晶片10的形成有電路等的面（即表面10a）塗布黏接劑12（參照圖5B）。通過在半導體晶片10的表面10a塗布黏接劑12，由黏接劑12保護半導體晶片10的表面10a上形成的電路。而且，可以由黏接劑12將半導體晶片10張貼到後述支撐基板13（參照圖6B）。Next, in the adhesive application process S20, the adhesive 12 is applied to the surface of the semiconductor wafer 10 on which the circuit and the like are formed (that is, the surface 10a) (see FIG. 5B). By coating the adhesive 12 on the surface 10 a of the semiconductor wafer 10, the adhesive 12 protects the circuit formed on the surface 10 a of the semiconductor wafer 10. In addition, the semiconductor wafer 10 can be pasted to the support substrate 13 described later by the adhesive 12 (see FIG. 6B).

使半導體晶片10的表面10a上塗布的黏接劑12固化後，進行黏接劑磨削過程S30。在黏接劑磨削過程S30中，採用後述黏接劑磨削裝置20（參照圖2），磨削黏接劑12的表面。另外，如後所述，黏接劑磨削過程S30可以包括向磨削黏接劑12的表面的黏接劑磨削工具吹拂清洗液。After curing the adhesive 12 coated on the surface 10a of the semiconductor wafer 10, the adhesive grinding process S30 is performed. In the adhesive grinding process S30, the surface of the adhesive 12 is ground using the adhesive grinding apparatus 20 (refer FIG. 2) mentioned later. In addition, as described later, the adhesive grinding process S30 may include blowing a cleaning solution to an adhesive grinding tool that grinds the surface of the adhesive 12.

而後，在端部修邊過程S40中，利用後述邊緣修邊裝置40（參照圖3）磨削或研磨半導體晶片10的端部。此時，黏接劑12也同時被磨削或研磨。另外，黏接劑磨削過程S30和端部修邊過程S40，可以將順序交替執行。即，可以在半導體晶片10的表面10a上塗布黏接劑12後，進行半導體晶片10的端部的修邊，之後磨削黏接劑12的表面。Then, in the edge trimming process S40, the edge of the semiconductor wafer 10 is ground or polished by the edge trimming device 40 (refer to FIG. 3) described later. At this time, the adhesive 12 is also ground or ground at the same time. In addition, the adhesive grinding process S30 and the end trimming process S40 may be executed alternately in order. That is, after applying the adhesive 12 on the surface 10 a of the semiconductor wafer 10, the edge of the semiconductor wafer 10 may be trimmed, and then the surface of the adhesive 12 may be ground.

接著，在支撐基板張貼過程S50中，在半導體晶片10的表面10a側張貼支撐基板13。通過張貼支撐基板13，可以將半導體晶片10的表面10a側固定在背面磨削裝置等上。這樣，能夠容易實施半導體晶片10的磨削以及薄化磨削後的半導體晶片10的搬送等。Next, in the support substrate attaching process S50, the support substrate 13 is posted on the surface 10a side of the semiconductor wafer 10. By attaching the support substrate 13, the surface 10a side of the semiconductor wafer 10 can be fixed to a back surface grinding device or the like. In this way, the grinding of the semiconductor wafer 10 and the transportation of the semiconductor wafer 10 after the thinning and grinding can be easily performed.

而後接著，在背面磨削過程S60中，磨削或研磨半導體晶片10的背面10b。這樣，使半導體晶片10薄化。另外，半導體晶片10上形成有貫穿電極的情況下，背面磨削時半導體晶片10和貫穿電極被同時磨削。此外，在背面磨削過程S60中，採用和黏接劑磨削裝置20同等的裝置。即，半導體晶片10的背面10b的磨削可以採用和黏接劑12的磨削同樣的裝置。另外，如後所述，背面磨削過程S60可以包括向磨削半導體晶片10的背面10b的晶片磨削工具吹拂清洗液。Then, in the back surface grinding process S60, the back surface 10b of the semiconductor wafer 10 is ground or polished. In this way, the semiconductor wafer 10 is thinned. In addition, when the through electrode is formed on the semiconductor wafer 10, the semiconductor wafer 10 and the through electrode are simultaneously ground at the time of back grinding. In addition, in the back grinding process S60, a device equivalent to the adhesive grinding device 20 is used. That is, for the grinding of the back surface 10b of the semiconductor wafer 10, the same device as the grinding of the adhesive 12 can be used. In addition, as described later, the back surface grinding process S60 may include blowing a cleaning solution to a wafer grinding tool for grinding the back surface 10 b of the semiconductor wafer 10.

另外，半導體晶片10的背面10b的磨削結束後，可以執行精加工過程和/或檢查過程等。精加工過程例如包括在貫穿電極的頂面形成罩層的過程，通過對未形成罩層的矽面進行鹼性蝕刻或化學機械研磨（CMP）加工使貫穿電極第二次出頭的過程，以及在背面10b上堆疊絕緣膜後利用研磨加工或蝕刻加工除去貫穿電極的頂面的絕緣膜的過程。In addition, after the grinding of the back surface 10b of the semiconductor wafer 10 is completed, a finishing process and/or an inspection process, etc. may be performed. The finishing process includes, for example, the process of forming a cap layer on the top surface of the through electrode, the process of making the through electrode a second time by performing alkaline etching or chemical mechanical polishing (CMP) processing on the silicon surface where the cap layer is not formed, and The insulating film is stacked on the back surface 10b and then the insulating film penetrating the top surface of the electrode is removed by grinding or etching.

在支撐基板拆取過程S70中，從半導體晶片10取下支撐基板13。此時，為了根據使用的黏接劑12的特性降低黏接劑12的黏接力，例如進行紫外線照射或者溶劑或者剝離劑等的供給。In the support substrate removal process S70, the support substrate 13 is removed from the semiconductor wafer 10. At this time, in order to reduce the adhesive force of the adhesive 12 according to the characteristics of the adhesive 12 used, for example, ultraviolet irradiation or supply of a solvent or a release agent is performed.

取下的半導體晶片10可以層疊到其他半導體晶片等上。半導體晶片10取下後（或者，半導體晶片10層疊到其他半導體晶片等上後），經過切割過程、晶片裝配過程、引線接合過程、澆注過程、修邊過程和檢查過程等各種後續過程，完成半導體裝置。The removed semiconductor wafer 10 can be laminated on other semiconductor wafers or the like. After the semiconductor wafer 10 is removed (or after the semiconductor wafer 10 is laminated on other semiconductor wafers, etc.), the semiconductor wafer is completed through various subsequent processes such as the cutting process, the wafer assembly process, the wire bonding process, the pouring process, the trimming process, and the inspection process. Device.

圖2是表示黏接劑磨削裝置20的簡要結構的主視圖。黏接劑磨削裝置20是在前述圖1所示的黏接劑磨削過程S30中磨削黏接劑12的表面的裝置。FIG. 2 is a front view showing the schematic structure of the adhesive grinding device 20. The adhesive grinding device 20 is a device that grinds the surface of the adhesive 12 in the adhesive grinding process S30 shown in FIG. 1.

如圖2所示，黏接劑磨削裝置20具有砂輪22。砂輪22是用於磨削工作盤30（後述）上吸附保持的半導體晶片10的黏接劑12的黏接劑磨削工具。砂輪22例如為杯形磨削砂輪。砂輪22設置在磨削頭21的大體水準的下表面。磨削頭21與旋轉軸23連接，而被旋轉驅動。As shown in FIG. 2, the adhesive grinding device 20 has a grinding wheel 22. The grinding wheel 22 is an adhesive grinding tool for grinding the adhesive 12 of the semiconductor wafer 10 adsorbed and held on a work plate 30 (described later). The grinding wheel 22 is, for example, a cup-shaped grinding wheel. The grinding wheel 22 is provided on the substantially level lower surface of the grinding head 21. The grinding head 21 is connected to the rotating shaft 23 and driven to rotate.

砂輪22的砂粒根據被磨削的黏接劑12適當選擇。作為砂輪22的砂粒，例如採用砂號＃300～＃1200的鑽石、立方氮化硼（cBN）以及碳化矽（SiC）。此外，作為固定砂粒的連接材料，採用陶瓷結合劑、金屬結合劑和樹脂結合劑等。The sand grains of the grinding wheel 22 are appropriately selected according to the adhesive 12 to be ground. As the sand grains of the grinding wheel 22, for example, diamonds with sand numbers #300 to #1200, cubic boron nitride (cBN), and silicon carbide (SiC) are used. In addition, ceramic bonding agents, metal bonding agents, resin bonding agents, etc. are used as connecting materials for fixing sand particles.

旋轉軸23與磨削頭21的上部連接。所述旋轉軸23例如與未圖示的電機連接。通過所述電機驅動，使旋轉軸23和磨削頭21旋轉。這樣，砂輪22以規定的速度旋轉移動，砂輪22的刃尖摩擦黏接劑12的表面，將規定量的黏接劑12除去。The rotating shaft 23 is connected to the upper part of the grinding head 21. The rotating shaft 23 is connected to a motor (not shown), for example. Driven by the motor, the rotating shaft 23 and the grinding head 21 are rotated. In this way, the grinding wheel 22 rotates and moves at a predetermined speed, and the blade tip of the grinding wheel 22 rubs the surface of the adhesive 12 to remove the predetermined amount of the adhesive 12.

此外，黏接劑磨削裝置20具有用於承載半導體晶片10的工作盤30。工作盤30的上表面設有用於保持半導體晶片10的基板卡盤31。基板卡盤31的上表面與包圍基板卡盤31的工作盤30的上表面，形成在彼此大體同一個面上且大體水準。In addition, the adhesive grinding device 20 has a working plate 30 for carrying the semiconductor wafer 10. The upper surface of the work tray 30 is provided with a substrate chuck 31 for holding the semiconductor wafer 10. The upper surface of the substrate chuck 31 and the upper surface of the work plate 30 surrounding the substrate chuck 31 are formed on the same surface and substantially level with each other.

基板卡盤31例如是多孔陶瓷構成的板狀體。成為基板卡盤31的下方的工作盤30的內部，形成有與基板卡盤31相連的流體室33。流體室33與抽氣管34和供水管35連接。抽氣管34與未圖示的真空泵等連接。供水管35與未圖示的供水泵等連接。The substrate chuck 31 is, for example, a plate-shaped body made of porous ceramic. A fluid chamber 33 connected to the substrate chuck 31 is formed in the inside of the work disk 30 which is below the substrate chuck 31. The fluid chamber 33 is connected to the suction pipe 34 and the water supply pipe 35. The exhaust pipe 34 is connected to a vacuum pump and the like not shown. The water supply pipe 35 is connected to a water supply pump and the like not shown.

這種結構下，通過利用所述真空泵等並借助抽氣管34排出流體室33內的空氣，使流體室33減壓。這樣，半導體晶片10的背面10b被基板卡盤31吸附並保持。即，借助基板卡盤31，半導體晶片10固定在工作盤30的上表面。With this structure, the fluid chamber 33 is decompressed by exhausting the air in the fluid chamber 33 through the suction pipe 34 by using the vacuum pump or the like. In this way, the back surface 10b of the semiconductor wafer 10 is sucked and held by the substrate chuck 31. That is, the semiconductor wafer 10 is fixed to the upper surface of the work plate 30 by the substrate chuck 31.

通過解除基板卡盤31的吸附來取下半導體晶片10時，將與抽氣管34連接的真空泵等停止，或將與真空泵等相連的未圖示的閥等關閉。而且，利用與供水管35連接的供水泵等並借助供水管35，向流體室33供給純水。這樣，可以將半導體晶片10容易拆下。When the semiconductor wafer 10 is removed by releasing the adsorption of the substrate chuck 31, the vacuum pump connected to the exhaust pipe 34 is stopped, or the unillustrated valve connected to the vacuum pump or the like is closed. In addition, pure water is supplied to the fluid chamber 33 via the water supply pipe 35 using a water supply pump or the like connected to the water supply pipe 35. In this way, the semiconductor wafer 10 can be easily removed.

此外，工作盤30的下部連接有用於支承工作盤30的旋轉軸32。旋轉軸32連接例如未圖示的電機。通過所述電機驅動，使旋轉軸32和工作盤30旋轉。這樣，可以使半導體晶片10以規定的速度旋轉，並且可以磨削黏接劑12的表面整體。In addition, a rotating shaft 32 for supporting the work plate 30 is connected to the lower part of the work plate 30. The rotating shaft 32 is connected to, for example, an unillustrated motor. Driven by the motor, the rotating shaft 32 and the working plate 30 are rotated. In this way, the semiconductor wafer 10 can be rotated at a predetermined speed, and the entire surface of the adhesive 12 can be ground.

此外，黏接劑磨削裝置20具有供給磨削液的磨削液供給噴嘴26以及清洗液噴射裝置27。磨削液供給噴嘴26例如向黏接劑12的表面即被磨削或研磨的面供給磨削液。作為使用的磨削液，例如可以列舉純水、乙醇胺水溶液、羥化四甲銨水溶液、苛性鹼水溶液、二氧化鈰水分散液和氧化鋁水分散液。In addition, the adhesive grinding device 20 has a grinding fluid supply nozzle 26 for supplying grinding fluid, and a cleaning fluid spraying device 27. The grinding fluid supply nozzle 26 supplies the grinding fluid to the surface of the adhesive 12, that is, the surface to be ground or polished, for example. As the grinding fluid used, for example, pure water, ethanolamine aqueous solution, tetramethylammonium hydroxide aqueous solution, caustic alkali aqueous solution, ceria aqueous dispersion, and alumina aqueous dispersion can be cited.

清洗液噴射裝置27是用於清洗砂輪22的裝置，具有用於向砂輪22吹拂清洗液的噴射噴嘴28。清洗液噴射裝置27從噴射噴嘴28，例如以3MPa至17MPa的壓力，向非磨削加工中的砂輪22（從黏接劑12的表面分離的砂輪22）的刃尖噴射清洗液。這樣，可以洗掉磨削或研磨黏接劑12時附著在砂輪22上的切削屑。這樣，能夠高精度、高品質且容易磨削黏接劑12的表面。The washing liquid spraying device 27 is a device for washing the grinding wheel 22 and has a spray nozzle 28 for blowing washing liquid to the grinding wheel 22. The cleaning fluid spray device 27 sprays the cleaning fluid from the spray nozzle 28 to the edge of the grinding wheel 22 (the grinding wheel 22 separated from the surface of the adhesive 12) at a pressure of 3 MPa to 17 MPa, for example. In this way, the cutting chips attached to the grinding wheel 22 during grinding or grinding of the adhesive 12 can be washed away. In this way, the surface of the adhesive 12 can be ground with high precision, high quality, and easily.

另外，作為從噴射噴嘴28噴射的清洗液，可以採用和前述的磨削液相同的。例如作為使用的清洗液，可以列舉純水、乙醇胺水溶液、羥化四甲銨水溶液、苛性鹼水溶液、二氧化鈰水分散液和氧化鋁水分散液等。In addition, as the cleaning fluid sprayed from the spray nozzle 28, the same as the aforementioned grinding fluid can be used. For example, as the cleaning liquid used, pure water, ethanolamine aqueous solution, tetramethylammonium hydroxide aqueous solution, caustic alkali aqueous solution, ceria aqueous dispersion, alumina aqueous dispersion, and the like can be cited.

另外，背面磨削過程S60中使用磨削半導體晶片10的背面10b的背面磨削裝置（未圖示）。所述背面磨削裝置可以和參照圖2說明的用於磨削黏接劑12的表面的黏接劑磨削裝置20具有大體同等的結構。In addition, in the back surface grinding process S60, a back surface grinding device (not shown) that grinds the back surface 10b of the semiconductor wafer 10 is used. The back surface grinding device may have substantially the same structure as the adhesive grinding device 20 for grinding the surface of the adhesive 12 described with reference to FIG. 2.

此外，作為用於磨削半導體晶片10的背面10b的晶片磨削工具，可以採用和前述用於磨削黏接劑12的砂輪22具有大體同樣結構的砂輪。但是，作為晶片磨削工具的規格（砂粒和黏接劑等），選擇適於切削半導體晶片10的矽和貫穿電極的規格。In addition, as a wafer grinding tool for grinding the back surface 10b of the semiconductor wafer 10, a grinding wheel having substantially the same structure as the aforementioned grinding wheel 22 for grinding the adhesive 12 can be used. However, as the specifications of the wafer grinding tool (sand, adhesive, etc.), the specifications of silicon and through electrodes suitable for cutting the semiconductor wafer 10 are selected.

此外，背面磨削裝置具有和前述的工作盤30大體相同的工作盤。在背面磨削過程S60中，半導體晶片10的表面10a側上張貼的支撐基板13（參照圖6C），被吸附保持在所述工作盤的上表面。In addition, the back surface grinding device has a work plate substantially the same as the work plate 30 described above. In the back grinding process S60, the support substrate 13 (refer to FIG. 6C) posted on the surface 10a side of the semiconductor wafer 10 is sucked and held on the upper surface of the work plate.

圖3是表示邊緣修邊裝置40的簡要結構的主視圖。如圖3所示，邊緣修邊裝置40如上所述，是對半導體晶片10的周圍端部修邊的裝置。邊緣修邊裝置40具備修邊頭41。修邊頭41具有將工作盤吸附保持的半導體晶片10的周圍端部和黏接劑12一起修邊（磨削或研磨）的研磨帶42。FIG. 3 is a front view showing the schematic structure of the edge trimming device 40. As shown in FIG. 3, the edge trimming device 40 is a device for trimming the peripheral end of the semiconductor wafer 10 as described above. The edge trimming device 40 includes a trimming head 41. The trimming head 41 has a polishing tape 42 that trims (grinds or polishes) the peripheral end of the semiconductor wafer 10 that is sucked and held by the work disk together with the adhesive 12.

研磨帶42例如為大體帶狀的構件。研磨帶42具有100μm至150μm厚度的聚對苯二甲酸乙二醇酯等薄膜基材，以及設置在所述薄膜基材上的碳化矽或者鑽石等的砂粒。所述砂粒設置在研磨帶42的摩擦半導體晶片10的面（即研磨面）上。研磨帶42捲繞在未圖示的供給卷軸和卷取卷軸上。對半導體晶片10的端部修邊時，研磨帶42從供給卷軸送出，並被卷取卷軸捲繞。The polishing belt 42 is, for example, a substantially belt-shaped member. The polishing belt 42 has a film substrate such as polyethylene terephthalate with a thickness of 100 μm to 150 μm, and sand particles such as silicon carbide or diamond provided on the film substrate. The sand grains are arranged on the surface of the polishing belt 42 that rubs the semiconductor wafer 10 (that is, the polishing surface). The polishing tape 42 is wound on a supply reel and a take-up reel (not shown). When trimming the edge of the semiconductor wafer 10, the polishing tape 42 is sent out from the supply reel and is wound by the take-up reel.

研磨帶42張掛在修邊頭41的規定位置上排列的多個導輥44上。這樣，研磨帶42以使研磨帶42的研磨面摩擦半導體晶片10的規定位置的方式配置。另外，修邊頭41設置成通過未圖示的伺服電機等位置調整自如。The polishing belt 42 is stretched on a plurality of guide rollers 44 arranged at predetermined positions of the trimming head 41. In this way, the polishing tape 42 is arranged such that the polishing surface of the polishing tape 42 rubs a predetermined position of the semiconductor wafer 10. In addition, the trimming head 41 is provided so as to be positionally adjustable by a servo motor, not shown, or the like.

此外，邊緣修邊裝置40具有用於使研磨帶42與半導體晶片10的端部抵接的抵板43。抵板43例如由發泡矽樹脂形成。抵板43從研磨帶42的研磨面的相反側的面（即背面）抵接研磨帶42。抵板43使研磨帶42的研磨面從半導體晶片10的側方壓抵半導體晶片10的端部。即，研磨帶42在被夾持於抵板43和半導體晶片10的端部之間的狀態下，磨削或研磨半導體晶片10的端部。In addition, the edge trimming device 40 has a contact plate 43 for bringing the polishing tape 42 into contact with the end of the semiconductor wafer 10. The abutment plate 43 is formed of, for example, foamed silicone resin. The abutment plate 43 abuts the polishing tape 42 from the surface (that is, the back surface) opposite to the polishing surface of the polishing tape 42. The abutment plate 43 presses the polishing surface of the polishing tape 42 against the end of the semiconductor wafer 10 from the side of the semiconductor wafer 10. That is, the polishing tape 42 grinds or grinds the end of the semiconductor wafer 10 while being sandwiched between the resist 43 and the end of the semiconductor wafer 10.

此外，邊緣修邊裝置40和前述的黏接劑磨削裝置20（參照圖2）同樣，具備用於吸附保持半導體晶片10的工作盤45以及旋轉驅動自如地支承工作盤45的旋轉軸46。通過由未圖示的電機等使旋轉軸46和工作盤45旋轉，使半導體晶片10旋轉。這樣，可以對半導體晶片10的全周端部修邊。另外，作為工作盤45的用於吸附保持半導體晶片10的吸附卡盤機構，可以採用和上述說明的工作盤30的吸附卡盤機構同樣的結構。In addition, the edge trimming device 40 is similar to the aforementioned adhesive grinding device 20 (see FIG. 2 ), and includes a table 45 for sucking and holding the semiconductor wafer 10 and a rotating shaft 46 that rotatably supports the table 45 rotatably. The semiconductor wafer 10 is rotated by rotating the rotating shaft 46 and the work plate 45 by a motor or the like not shown. In this way, the entire peripheral end of the semiconductor wafer 10 can be trimmed. In addition, as the suction chuck mechanism of the work disk 45 for suction-holding the semiconductor wafer 10, the same structure as the suction chuck mechanism of the work disk 30 described above can be adopted.

邊緣修邊裝置40具有冷卻水噴射噴嘴49。這樣，邊緣修邊裝置40邊從冷卻水噴射噴嘴49向摩擦半導體晶片10的研磨帶42的研磨面噴射冷卻水，邊磨削或研磨半導體晶片10的端部。利用這種結構，邊緣修邊裝置40可以將半導體晶片10的周圍端部和黏接劑12一起高精度修邊。The edge trimming device 40 has a cooling water spray nozzle 49. In this way, the edge trimming device 40 grinds or grinds the end of the semiconductor wafer 10 while spraying cooling water from the cooling water spray nozzle 49 to the polishing surface of the polishing belt 42 rubbing the semiconductor wafer 10. With this structure, the edge trimming device 40 can trim the peripheral end of the semiconductor wafer 10 and the adhesive 12 together with high precision.

另外，黏接劑磨削裝置20和邊緣修邊裝置40，可以作為分別獨立的裝置構成，也可以作為將這些功能一體組裝的一個裝置構成。In addition, the adhesive grinding device 20 and the edge trimming device 40 may be configured as separate devices, or may be configured as a single device that integrates these functions.

以下，參照圖4A和圖4B，說明黏接劑磨削裝置20的結構和邊緣修邊裝置40的結構一體組裝在一個裝置的示例。Hereinafter, referring to FIGS. 4A and 4B, an example in which the structure of the adhesive grinding device 20 and the structure of the edge trimming device 40 are integrated into one device will be described.

圖4A是表示黏接劑磨削裝置120的簡要結構的主視圖。圖4B是同裝置的俯視圖。另外，在圖4A和圖4B中，對於和已說明的實施方式的結構要素相同的結構要素或發揮同樣的作用和效果的結構要素，標註相同的附圖標記。FIG. 4A is a front view showing the schematic structure of the adhesive grinding device 120. Fig. 4B is a top view of the same device. In addition, in FIGS. 4A and 4B, the same reference numerals are given to the same structural elements or structural elements that exert the same functions and effects as the structural elements of the described embodiment.

如圖4A和圖4B所示，黏接劑磨削裝置120具有磨削頭21和修邊頭41。磨削頭21具有砂輪22。砂輪22是用於磨削黏接劑12的表面的黏接劑磨削工具。修邊頭41具有用於磨削或研磨半導體晶片10的周圍端部的研磨帶42。As shown in FIGS. 4A and 4B, the adhesive grinding device 120 has a grinding head 21 and a trimming head 41. The grinding head 21 has a grinding wheel 22. The grinding wheel 22 is an adhesive grinding tool for grinding the surface of the adhesive 12. The trimming head 41 has a polishing belt 42 for grinding or polishing the peripheral end of the semiconductor wafer 10.

此外，黏接劑磨削裝置120具備用於吸附保持半導體晶片10的工作盤45。工作盤45的結構和功能如上所述。但是，在黏接劑磨削過程S30和端部修邊過程S40兩過程中，黏接劑磨削裝置120採用共通的工作盤45。In addition, the adhesive grinding device 120 includes a work plate 45 for sucking and holding the semiconductor wafer 10. The structure and function of the working plate 45 are as described above. However, in both the adhesive grinding process S30 and the end trimming process S40, the adhesive grinding device 120 uses a common working plate 45.

這裏，工作盤45以其外徑小於半導體晶片10的外徑為特徵。這樣，可以在工作盤45與修邊頭41不接觸的情況下，將承載在工作盤45的上表面並被吸附保持的半導體晶片10的周圍端部，用修邊頭41的研磨帶42修邊。Here, the working disk 45 is characterized in that its outer diameter is smaller than the outer diameter of the semiconductor wafer 10. In this way, the peripheral end of the semiconductor wafer 10, which is carried on the upper surface of the work plate 45 and held by suction, can be repaired with the polishing tape 42 of the edging head 41 without contacting the work plate 45 and the trimming head 41. side.

黏接劑磨削裝置120在上述的構件以外，具備磨削液供給噴嘴26、清洗液噴射裝置27和冷卻水噴射噴嘴49等和已說明的黏接劑磨削裝置20及邊緣修邊裝置40大體相同的構件。In addition to the above-mentioned components, the adhesive grinding device 120 includes a grinding fluid supply nozzle 26, a cleaning fluid spray device 27, a cooling water spray nozzle 49, etc., and the adhesive grinding device 20 and edge trimming device 40 already described. Roughly the same components.

按照具有上述結構的黏接劑磨削裝置120，用一個黏接劑磨削裝置120，可以執行磨削黏接劑12的表面的黏接劑磨削過程S30，以及對半導體晶片10的周圍端部修邊的端部修邊過程S40。這樣，能夠削減半導體晶片10的搬送過程和設置過程。其結果，不僅可以提高生產效率，還能夠削減設備費用。According to the adhesive grinding device 120 having the above-mentioned structure, with one adhesive grinding device 120, the adhesive grinding process S30 of grinding the surface of the adhesive 12 and the peripheral end of the semiconductor wafer 10 can be performed. The end trimming process S40. In this way, it is possible to reduce the transportation process and the installation process of the semiconductor wafer 10. As a result, not only can production efficiency be improved, but also equipment costs can be reduced.

接著，參照圖5A～圖5C和圖6A～圖6C，具體說明圖1所示的半導體裝置的製造方法。Next, referring to FIGS. 5A to 5C and FIGS. 6A to 6C, a method of manufacturing the semiconductor device shown in FIG. 1 will be specifically described.

圖5A是表面10a上形成有電路的半導體晶片10的示意圖。圖5B是表面10a塗布有黏接劑12的半導體晶片10的示意圖。圖5C是表示半導體晶片10上的黏接劑12被磨削的狀態的示意圖。此外，圖6A是表示半導體晶片10的周圍端部被修邊狀態的示意圖。圖6B是張貼有支撐基板13的半導體晶片10的示意圖。圖6C是表示半導體晶片10的背面10b被磨削狀態的示意圖。FIG. 5A is a schematic diagram of a semiconductor wafer 10 with a circuit formed on the surface 10a. FIG. 5B is a schematic diagram of the semiconductor wafer 10 with the adhesive 12 coated on the surface 10 a. FIG. 5C is a schematic diagram showing a state where the adhesive 12 on the semiconductor wafer 10 is ground. 6A is a schematic diagram showing a state where the peripheral end portion of the semiconductor wafer 10 is trimmed. FIG. 6B is a schematic diagram of the semiconductor wafer 10 on which the support substrate 13 is pasted. FIG. 6C is a schematic diagram showing a state where the back surface 10b of the semiconductor wafer 10 is ground.

如圖5A所示，在電路形成過程S10中，通過對半導體晶片10的表面10a實施（或者重複實施）規定的過程，形成電路。規定的過程例如包含光刻膠塗布過程、通過光掩模的圖形電鍍過程、蝕刻過程、氧化過程、擴散過程、化學氣相沉積（CVD）過程、離子注入過程和CMP過程。As shown in FIG. 5A, in the circuit forming process S10, a predetermined process is performed (or repeated) on the surface 10a of the semiconductor wafer 10 to form a circuit. The prescribed process includes, for example, a photoresist coating process, a pattern plating process through a photomask, an etching process, an oxidation process, a diffusion process, a chemical vapor deposition (CVD) process, an ion implantation process, and a CMP process.

此外，在電路形成過程S10中，在半導體晶片10上形成未圖示的貫穿電極。而且，作為突出部（具有凸出形狀的部分），半導體晶片10的表面10a形成有例如與貫穿電極連接的凸出11。例如，在形成有電路的半導體晶片10上，通過蝕刻加工或者鐳射加工等形成多個孔。形成的所述孔的內表面上設有絕緣膜。隨後，由鉭或鈦在所述孔的表面形成金屬晶種層。而後，金屬晶種層的進一步內側，填充銅樹脂膏等。這樣，形成貫穿電極。而後，在貫穿電極的表面10a側的頂面上形成凸出形狀的凸出11。In addition, in the circuit formation process S10, through electrodes (not shown) are formed on the semiconductor wafer 10. Also, as a protrusion (a portion having a convex shape), the surface 10 a of the semiconductor wafer 10 is formed with, for example, a protrusion 11 connected to a through electrode. For example, in the semiconductor wafer 10 on which the circuit is formed, a plurality of holes are formed by etching processing, laser processing, or the like. An insulating film is provided on the inner surface of the formed hole. Subsequently, a metal seed layer is formed of tantalum or titanium on the surface of the hole. Then, the further inner side of the metal seed layer is filled with copper resin paste or the like. In this way, through electrodes are formed. Then, a protrusion 11 in a convex shape is formed on the top surface on the surface 10a side of the penetrating electrode.

另外，半導體晶片10不限於具有上述的貫穿電極。半導體晶片10上也可以不形成貫穿電極。此外，半導體晶片10的表面10a的突出部，不限於與貫穿電極連接的凸出11。突出部可以是由其他電路和標記等形成的各種凸出狀部等。In addition, the semiconductor wafer 10 is not limited to having the above-mentioned through electrodes. The semiconductor wafer 10 does not have to form through electrodes. In addition, the protrusions on the surface 10a of the semiconductor wafer 10 are not limited to the protrusions 11 connected to the through electrodes. The protrusion may be various protrusions formed by other circuits, marks, and the like.

如圖5B所示，在黏接劑塗布過程S20中，在半導體晶片10的表面10a上塗布黏接劑12。作為使用的黏接劑12，例如可以列舉丙烯酸樹脂系、橡膠系、矽樹脂系和苯酚樹脂系等各種樹脂膠、黏接劑和黏合劑。黏接劑12可以是紫外線固化型黏合劑等。黏接劑12例如通過旋塗法塗布。另外，以黏接劑12形成的層的厚度大於凸出11的高度的方式，塗布黏接劑12。As shown in FIG. 5B, in the adhesive coating process S20, the adhesive 12 is coated on the surface 10a of the semiconductor wafer 10. Examples of the adhesive 12 used include various resin glues, adhesives, and adhesives such as acrylic resin, rubber, silicone, and phenol resin. The adhesive 12 may be an ultraviolet curable adhesive or the like. The adhesive 12 is applied by, for example, a spin coating method. In addition, the adhesive 12 is applied in such a way that the thickness of the layer formed by the adhesive 12 is greater than the height of the protrusion 11.

而後，塗布黏接劑12後，通過與使用的黏接劑12的種類對應的規定的方法，進行使黏接劑12固化的處理。Then, after applying the adhesive 12, a process of curing the adhesive 12 is performed by a predetermined method corresponding to the type of the adhesive 12 used.

這樣，通過在半導體晶片10的表面10a塗布黏接劑12，半導體晶片10的表面10a上形成的電路被黏接劑12保護。而且，可以將半導體晶片10張貼到後述支撐基板13（參照圖6B）上。In this way, by coating the adhesive 12 on the surface 10 a of the semiconductor wafer 10, the circuit formed on the surface 10 a of the semiconductor wafer 10 is protected by the adhesive 12. Furthermore, the semiconductor wafer 10 may be pasted on a supporting substrate 13 (refer to FIG. 6B) described later.

這裏，黏接劑12覆蓋半導體晶片10的表面10a上形成的凸出11。因此，黏接劑12的表面容易因凸出11而成為一部分略微隆起的狀態。Here, the adhesive 12 covers the protrusion 11 formed on the surface 10 a of the semiconductor wafer 10. Therefore, the surface of the adhesive 12 is likely to be partially raised slightly due to the protrusions 11.

半導體晶片10的表面10a上塗布的黏接劑12固化後，進行黏接劑磨削過程S30。如圖5C所示，在黏接劑磨削過程S30中，採用參照圖2說明的黏接劑磨削裝置20的磨削頭21，磨削黏接劑12的表面。這樣，黏接劑12的表面形成的隆起等被除去，使黏接劑12的表面平坦。另外，黏接劑12的厚度大於凸出11的高度。因此，磨削黏接劑12的表面時，凸出11不會和黏接劑12一起被磨削。After the adhesive 12 coated on the surface 10a of the semiconductor wafer 10 is cured, the adhesive grinding process S30 is performed. As shown in FIG. 5C, in the adhesive grinding process S30, the grinding head 21 of the adhesive grinding device 20 described with reference to FIG. 2 is used to grind the surface of the adhesive 12. In this way, the bumps and the like formed on the surface of the adhesive 12 are removed, and the surface of the adhesive 12 is made flat. In addition, the thickness of the adhesive 12 is greater than the height of the protrusion 11. Therefore, when the surface of the adhesive 12 is ground, the protrusions 11 will not be ground together with the adhesive 12.

這樣，磨削半導體晶片10的表面10a上塗布的黏接劑12的表面。如此，可以使從半導體晶片10的表面10a至黏接劑12的表面的高度，即黏接劑12的厚度均勻。其結果，可以高精度統一黏接劑12的厚度尺寸。In this way, the surface of the adhesive 12 applied on the surface 10a of the semiconductor wafer 10 is ground. In this way, the height from the surface 10a of the semiconductor wafer 10 to the surface of the adhesive 12, that is, the thickness of the adhesive 12, can be made uniform. As a result, the thickness dimension of the adhesive 12 can be unified with high accuracy.

如圖6A所示，在端部修邊過程S40中，採用參照圖3說明的邊緣修邊裝置40，對半導體晶片10的周圍端部進行修邊。在端部修邊過程S40中，半導體晶片10的端部和黏接劑12同時被磨削或研磨。這樣，半導體晶片10的端部和黏接劑12的端部的圓角和傾斜被除去。這樣，抑制了通過磨削半導體晶片10的背面10b使半導體晶片10薄化時半導體晶片10的端部附近變得比其他部分薄。由此，能夠抑制半導體晶片10的端部附近的崩裂。As shown in FIG. 6A, in the edge trimming process S40, the edge trimming device 40 described with reference to FIG. 3 is used to trim the peripheral end of the semiconductor wafer 10. In the end trimming process S40, the end of the semiconductor wafer 10 and the adhesive 12 are ground or polished at the same time. In this way, the rounded corners and inclination of the end of the semiconductor wafer 10 and the end of the adhesive 12 are removed. In this way, it is suppressed that the vicinity of the end portion of the semiconductor wafer 10 becomes thinner than other portions when the semiconductor wafer 10 is thinned by grinding the back surface 10b of the semiconductor wafer 10. Thereby, it is possible to suppress cracking in the vicinity of the end portion of the semiconductor wafer 10.

如圖6B所示，在支撐基板張貼過程S50中，在塗布有黏接劑12的半導體晶片10的表面10a側，張貼支撐基板13。即，支撐基板13利用半導體晶片10的表面10a上塗布的黏接劑12，黏接到半導體晶片10的表面10a側。As shown in FIG. 6B, in the support substrate attaching process S50, the support substrate 13 is posted on the surface 10a side of the semiconductor wafer 10 coated with the adhesive 12. That is, the support substrate 13 is bonded to the surface 10a side of the semiconductor wafer 10 by the adhesive 12 applied on the surface 10a of the semiconductor wafer 10.

支撐基板13是高剛性的板狀體。作為支撐基板13的材料，可以列舉玻璃、金屬、陶瓷和合成樹脂等。另外，作為在黏接劑12的表面黏接支撐基板13的方法，根據使用的黏接劑12的特性等，可以採用各種方法。The support substrate 13 is a highly rigid plate-shaped body. As the material of the supporting substrate 13, glass, metal, ceramic, synthetic resin, and the like can be cited. In addition, as a method of bonding the support substrate 13 to the surface of the adhesive 12, various methods can be adopted depending on the characteristics of the adhesive 12 used and the like.

如上所述，通過黏接劑磨削過程S30（參照圖5C）使黏接劑12的表面平坦，使黏接劑12的厚度均勻化。在所述黏接劑12上張貼高剛性的支撐基板13。這樣，半導體晶片10的背面10b與支撐基板13的主面大體平行。As described above, through the adhesive grinding process S30 (refer to FIG. 5C), the surface of the adhesive 12 is flattened, and the thickness of the adhesive 12 is made uniform. A high-rigidity support substrate 13 is pasted on the adhesive 12. In this way, the back surface 10b of the semiconductor wafer 10 is substantially parallel to the main surface of the support substrate 13.

如圖6C所示，在背面磨削過程S60中，採用和圖2所示的黏接劑磨削裝置20大體相同的背面磨削裝置，對半導體晶片10的背面10b進行磨削。半導體晶片10以支撐基板13在下的狀態承載在背面磨削裝置的工作盤的上表面，由基板卡盤吸附、保持。即，半導體晶片10以其背面10b朝向上方的狀態，設置在工作盤的上表面上。而後，半導體晶片10的背面10b被晶片磨削工具磨削。As shown in FIG. 6C, in the back surface grinding process S60, a back surface grinding device that is substantially the same as the adhesive grinding device 20 shown in FIG. 2 is used to grind the back surface 10b of the semiconductor wafer 10. The semiconductor wafer 10 is placed on the upper surface of the work table of the back grinding device with the support substrate 13 in the lower state, and is sucked and held by the substrate chuck. That is, the semiconductor wafer 10 is placed on the upper surface of the work plate with its back surface 10b facing upward. Then, the back surface 10b of the semiconductor wafer 10 is ground by a wafer grinding tool.

如上所述，在黏接劑磨削過程S30（參照圖5C）中使黏接劑12的厚度均勻化。其結果，半導體晶片10的背面10b與支撐基板13的主面大體平行。因此，半導體晶片10的背面10b與背面磨削裝置的工作盤的上表面大體平行。即，半導體晶片10大體水準承載在工作盤的上表面。As described above, the thickness of the adhesive 12 is made uniform in the adhesive grinding process S30 (refer to FIG. 5C). As a result, the back surface 10b of the semiconductor wafer 10 and the main surface of the support substrate 13 are substantially parallel. Therefore, the back surface 10b of the semiconductor wafer 10 is substantially parallel to the upper surface of the working plate of the back surface grinding device. In other words, the semiconductor wafer 10 is mounted on the upper surface of the work plate substantially horizontally.

如上所述，在本實施方式中，半導體晶片10上的黏接劑12的表面被磨削，而且半導體晶片10的周圍端部被修邊後，將支撐基板13張貼到半導體晶片10上，磨削半導體晶片10的背面10b。這樣，可以使半導體晶片10的厚度均勻，並且可以抑制半導體晶片10的破損。其結果，本實施方式能夠製造比現有技術的半導體晶片更薄且高品質的半導體晶片10。As described above, in this embodiment, the surface of the adhesive 12 on the semiconductor wafer 10 is ground, and the peripheral end of the semiconductor wafer 10 is trimmed, and then the supporting substrate 13 is placed on the semiconductor wafer 10 and ground The back surface 10b of the semiconductor wafer 10 is shaved. In this way, the thickness of the semiconductor wafer 10 can be made uniform, and the damage of the semiconductor wafer 10 can be suppressed. As a result, this embodiment can manufacture a thinner and high-quality semiconductor wafer 10 than conventional semiconductor wafers.

此外，在背面磨削過程S60中，同時磨削半導體晶片10和貫穿電極。這樣，可以同時高效進行半導體晶片的薄化過程和貫穿電極的出頭過程。而且，不僅使半導體晶片10的厚度均勻統一，還可以使半導體晶片10上形成的貫穿電極的高度均勻統一。此外，向磨削半導體晶片10的背面10b的晶片磨削工具吹拂清洗液。這樣，可以抑制半導體晶片10的污染。因此，能夠高效製造具有高集成率的小型三維安裝的半導體裝置。In addition, in the back surface grinding process S60, the semiconductor wafer 10 and the through electrode are simultaneously ground. In this way, the thinning process of the semiconductor wafer and the tapping process of the penetrating electrode can be performed efficiently at the same time. Moreover, not only the thickness of the semiconductor wafer 10 can be made uniform, but also the height of the through electrodes formed on the semiconductor wafer 10 can be made uniform. In addition, the cleaning liquid is blown to the wafer grinding tool for grinding the back surface 10b of the semiconductor wafer 10. In this way, contamination of the semiconductor wafer 10 can be suppressed. Therefore, it is possible to efficiently manufacture a small three-dimensionally mounted semiconductor device with a high integration rate.

另外，也可以在磨削半導體晶片10的背面10b後，執行用於精加工的各種過程。作為所述過程，例如可以列舉在背面10b上形成絕緣膜的過程。In addition, after grinding the back surface 10b of the semiconductor wafer 10, various processes for finishing may be performed. As the process, for example, a process of forming an insulating film on the back surface 10b can be cited.

具體可以對半導體晶片10進行無電解鍍鎳（Ni）過程。所述過程可以僅在從半導體晶片10的背面10b的矽面露出的貫穿電極的頂面上選擇性形成罩層。無電解鍍鎳液在鎳（Ni）以外，可以包含硼（B）、磷（P）或鈷（Co）等。Specifically, the semiconductor wafer 10 may be subjected to an electroless nickel (Ni) plating process. The process can selectively form a mask layer only on the top surface of the through electrode exposed from the silicon surface of the back surface 10b of the semiconductor wafer 10. The electroless nickel plating solution may contain boron (B), phosphorus (P), cobalt (Co), etc. in addition to nickel (Ni).

接著，可以通過對未形成罩層的矽面進行鹼性蝕刻或CMP加工，進行貫穿電極的第二次出頭加工。Then, by performing alkaline etching or CMP processing on the silicon surface where the mask layer is not formed, the second tapping processing of the penetrating electrode can be performed.

而後，可以在進行過貫穿電極的第二次出頭加工的半導體晶片10的背面10b上，進行堆疊絕緣膜（insulator）的處理。隨後，可以採用CMP組合物和研磨拋光輪進行研磨加工。而且，也可以將貫穿電極的頂面的所述絕緣膜除去。After that, a process of stacking an insulator may be performed on the back surface 10b of the semiconductor wafer 10 that has undergone the second tapping process of the through electrode. Subsequently, the CMP composition and an abrasive polishing wheel can be used for abrasive processing. Moreover, the insulating film penetrating the top surface of the electrode may be removed.

另外，本發明不限於上述實施方式。上述的實施方式在不脫離本發明的發明思想的範圍內可以進行各種變更。In addition, the present invention is not limited to the above-mentioned embodiment. The above-mentioned embodiment can be variously changed without departing from the inventive concept of the present invention.

10‧‧‧半導體晶片10a‧‧‧表面10b‧‧‧背面11‧‧‧凸出12‧‧‧黏接劑13‧‧‧支撐基板20‧‧‧黏接劑磨削裝置21‧‧‧磨削頭22‧‧‧砂輪23‧‧‧旋轉軸26‧‧‧噴嘴27‧‧‧清洗液噴射裝置28‧‧‧噴射噴嘴30‧‧‧工作盤31‧‧‧基板卡盤32‧‧‧旋轉軸33‧‧‧流體室34‧‧‧抽氣管35‧‧‧供水管40‧‧‧邊緣修邊裝置41‧‧‧修邊頭42‧‧‧研磨帶43‧‧‧抵板45‧‧‧工作盤46‧‧‧旋轉軸49‧‧‧噴射噴嘴120‧‧‧黏接劑磨削裝10‧‧‧Semiconductor wafer 10a‧‧‧Surface 10b‧‧‧Back 11‧‧‧Protrusion 12‧‧‧Adhesive 13‧‧‧Supporting substrate 20‧‧‧Adhesive grinding device 21‧‧‧Grinding Cutting head 22‧‧‧grinding wheel 23‧‧‧rotating shaft 26‧‧‧nozzle 27‧‧‧cleaning fluid spraying device 28‧‧‧spraying nozzle 30‧‧‧working plate 31‧‧‧substrate chuck 32‧‧‧rotation Shaft 33. Working plate 46‧‧‧Rotating shaft 49‧‧‧Jet nozzle 120‧‧‧Adhesive grinding device

圖1是表示本發明的實施方式的半導體裝置的製造過程的流程圖。 圖2是表示本發明的實施方式的半導體裝置的製造方法中採用的黏接劑磨削裝置的簡要結構的主視圖。 圖3是表示本發明的實施方式的半導體裝置的製造方法中採用的邊緣修邊裝置的簡要結構的主視圖。 圖4A是表示本發明的實施方式的半導體裝置的製造方法中採用的黏接劑磨削裝置的其他示例的主視圖，圖4B是同裝置的俯視圖。 圖5A～5C表示了本發明的實施方式的半導體裝置的製造方法的半導體晶片。圖5A是形成有電路的半導體晶片的示意圖。圖5B是塗布有黏接劑的半導體晶片的示意圖。圖5C是表示半導體晶片上的黏接劑被磨削的狀態的示意圖。 圖6A～6C表示了本發明的實施方式的半導體裝置的製造方法的半導體晶片。圖6A是表示半導體晶片的周圍端部被修邊的狀態的示意圖。圖6B是表示張貼有支撐基板的半導體晶片的示意圖。圖6C是表示半導體晶片的背面被磨削的狀態的示意圖。FIG. 1 is a flowchart showing a manufacturing process of a semiconductor device according to an embodiment of the present invention. 2 is a front view showing a schematic configuration of an adhesive grinding device used in a method of manufacturing a semiconductor device according to an embodiment of the present invention. 3 is a front view showing a schematic configuration of an edge trimming device used in the method of manufacturing a semiconductor device according to the embodiment of the present invention. 4A is a front view showing another example of the adhesive grinding device used in the method of manufacturing a semiconductor device according to the embodiment of the present invention, and FIG. 4B is a plan view of the same device. 5A to 5C show a semiconductor wafer in a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 5A is a schematic diagram of a semiconductor wafer on which a circuit is formed. FIG. 5B is a schematic diagram of a semiconductor wafer coated with an adhesive. Fig. 5C is a schematic diagram showing a state where the adhesive on the semiconductor wafer is ground. 6A to 6C show a semiconductor wafer in a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 6A is a schematic diagram showing a state where the peripheral end portion of the semiconductor wafer is trimmed. Fig. 6B is a schematic diagram showing a semiconductor wafer on which a supporting substrate is attached. FIG. 6C is a schematic diagram showing a state where the back surface of the semiconductor wafer is ground.

Claims (7)

一種半導體裝置的製造方法，其特徵在於包括：在形成一突出部的一半導體晶片的一表面塗布一黏接劑的過程；磨削所述半導體晶片上塗布的所述黏接劑的表面的過程；將塗布有所述黏接劑的所述半導體晶片的一周圍端部和所述黏接劑一起修邊的過程；將所述黏接劑的表面被磨削且所述周圍端部被修邊的所述半導體晶片借助所述黏接劑張貼到一支撐基板的過程；以及磨削所述支撐基板上張貼的所述半導體晶片的一背面的過程，使用一個黏接劑磨削裝置並採用共通的工作盤執行磨削所述半導體晶片上塗布的所述黏接劑的表面的過程，以及將塗布有所述黏接劑的所述半導體晶片的周圍端部和所述黏接劑一起修邊的過程。 A method of manufacturing a semiconductor device, characterized in that it comprises: a process of applying an adhesive on a surface of a semiconductor wafer forming a protrusion; a process of grinding the surface of the adhesive applied on the semiconductor wafer The process of trimming a peripheral end of the semiconductor wafer coated with the adhesive and the adhesive; the surface of the adhesive is ground and the peripheral end is trimmed The process of attaching the semiconductor wafer on the side to a support substrate with the aid of the adhesive; and the process of grinding a back surface of the semiconductor wafer posted on the support substrate using an adhesive grinding device and The common worktable performs the process of grinding the surface of the adhesive coated on the semiconductor wafer, and repairs the peripheral end of the semiconductor wafer coated with the adhesive together with the adhesive Side process. 如請求項1所述的半導體裝置的製造方法，其特徵在於，磨削所述黏接劑的表面的過程，包括向磨削所述黏接劑的表面的一黏接劑磨削工具吹拂一清洗液。 The method of manufacturing a semiconductor device according to claim 1, wherein the process of grinding the surface of the adhesive includes blowing an adhesive grinding tool that grinds the surface of the adhesive. Cleaning fluid. 如請求項2所述的半導體裝置的製造方法，其特徵在於，向所述黏接劑磨削工具的從所述黏接劑的表面分離的一砂輪的一刃尖吹拂所述清洗液。 The method of manufacturing a semiconductor device according to claim 2, wherein the cleaning liquid is blown on a tip of a grinding wheel separated from the surface of the adhesive of the adhesive grinding tool. 如請求項1至3中任意一項所述的半導體裝置的製造方法，其特徵在於，所述半導體晶片具有一貫穿電極，磨削所述半導體晶片的所述背面的過程，同時磨削所述半導體晶 片和所述貫穿電極。 The method of manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the semiconductor wafer has a through electrode, the process of grinding the back surface of the semiconductor wafer, and simultaneously grinding the Semiconductor crystal Sheet and the through electrode. 如請求項4所述的半導體裝置的製造方法，其特徵在於，磨削所述半導體晶片的所述背面的過程，包括向磨削所述半導體晶片的所述背面的所述晶片磨削工具吹拂所述清洗液。 The method of manufacturing a semiconductor device according to claim 4, wherein the process of grinding the back surface of the semiconductor wafer includes blowing on the wafer grinding tool for grinding the back surface of the semiconductor wafer The cleaning liquid. 一種半導體製造裝置，其特徵在於包括：一工作盤，吸附保持一表面具有一突出部且所述表面塗布有一黏接劑的一半導體晶片；一杯形磨削砂輪，邊旋轉邊磨削吸附保持在所述工作盤上並處於旋轉狀態的所述半導體晶片的所述黏接劑的表面；以及一研磨帶，將吸附保持在所述工作盤上的所述半導體晶片的一周圍端部和所述黏接劑一起修邊。 A semiconductor manufacturing device, which is characterized in that it comprises: a working plate for adsorbing and holding a semiconductor wafer with a protruding part on the surface and an adhesive coated on the surface; a cup-shaped grinding wheel for grinding and holding on the The surface of the adhesive of the semiconductor wafer in a rotating state on the work plate; and a polishing tape for adsorbing and holding a peripheral end of the semiconductor wafer on the work plate and the The adhesive is trimmed together. 如請求項6所述的半導體製造裝置，其特徵在於，還具備向所述杯形磨削砂輪吹拂一清洗液的一清洗液噴射裝置。The semiconductor manufacturing apparatus according to claim 6, further comprising a cleaning liquid spraying device that blows a cleaning liquid to the cup-shaped grinding wheel.
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