JP2013258203A - Processing method of wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing method of a wafer for preventing the grinding dust from sticking to a wafer, and for removing the grinding dust from the wafer, and to provide a processing device of a wafer.SOLUTION: The processing method of a wafer includes a cleaning step for cleaning the grinding dust formed in the grinding step by ejecting a mixed fluid composed of a gas and a liquid to the backside of a wafer, a drying step for drying the backside of a wafer by ejecting a gas thereto following to the cleaning step, and a dry processing step for removing the grinding dust produced on the wafer in the grinding step by performing dry processing on the backside of a wafer following to the drying step.

Description

  The present invention relates to a method for processing a wafer such as a semiconductor wafer and a wafer processing apparatus.

  Conventionally, as disclosed in, for example, Patent Document 1, an apparatus for grinding and polishing a back surface of a wafer (semiconductor wafer) in a semiconductor chip manufacturing process is known. In such an apparatus, the wafer is thinned by grinding, and grinding distortion is removed by polishing.

  Further, as disclosed in Patent Document 2, after forming a division groove having a predetermined depth along a division line from the surface of the wafer and attaching a protective member to the surface of the wafer on which the division groove is formed In addition, DBG processing (dicing before grinding) which separates into individual semiconductor chips by turning over and grinding the back surface of the wafer is known.

  In such DBG processing, as a protective member attached to the surface of the wafer, for example, as disclosed in Patent Document 3, a glue layer (adhesive layer) and a base material layer (base material film) are provided. A protective tape is used.

JP 2002-28311 A JP 2004-193241 A JP-A-5-198542

  In the above-described DBG processing, grinding scraps are generated by grinding, and the grinding scraps remain in the gaps between the chips formed by the division and the outer peripheral portion of the wafer.

  And when the protective tape which has a glue layer is used, since grinding waste adheres to the glue layer of a protective tape, it is difficult to remove grinding waste sufficiently with the grinding fluid supplied during grinding. It will be.

  On the other hand, in order to remove the grinding distortion formed by grinding, processes such as dry polishing as disclosed in Patent Document 1 and known plasma etching are performed. During these processes, a gas is supplied to the back surface of the wafer. It is assumed that the wafer back surface is dried.

  However, there is a concern that the supply of gas causes a gap between the chips and a part of the grinding dust remaining in the outer peripheral portion of the wafer to rise and adhere to the back surface or side surface of the wafer.

  Furthermore, there is a problem in that the remaining grinding dust adheres when drying with gas is performed with the grinding dust remaining on the back surface, the chip side surface, or the gap between the chips. The grinding dust once dried and fixed cannot be removed even after washing.

  The present invention has been made in view of the above problems, and the object of the present invention is to process the wafer for preventing the grinding dust from adhering to the wafer and removing the grinding dust from the wafer. It is to provide a method and a wafer processing apparatus.

  According to the first aspect of the present invention, there is provided a wafer processing method in which a device is formed in each region defined by a plurality of division lines that intersect with each other on the surface. A cutting groove forming step for forming a cutting groove having a depth that reaches a finished thickness by cutting with a cutting blade, and a protective member disposing step for disposing a protective member on the surface of the wafer after performing the cutting groove forming step, After carrying out the protective member placement step, the wafer is ground to the individual chip by supplying the grinding fluid to the wafer and grinding the backside of the wafer to thin it to the finished thickness and exposing the cutting grooves to the backside of the wafer. Grinding debris formed in the grinding step by ejecting a mixed fluid consisting of gas and liquid to the back surface of the wafer after performing the grinding step to be divided and the grinding step After performing the cleaning step, the cleaning step, the drying step for blowing the gas to the back surface of the wafer to dry the back surface of the wafer, the drying step, and then the dry processing of the back surface of the wafer and the grinding step And a dry processing step for removing grinding distortion generated in the wafer.

  According to the invention described in claim 2, a holding table that holds the wafer on which the protection member is disposed via the protection member, and a grinding means that includes a grinding wheel that grinds the back surface of the wafer held by the holding table; While grinding the wafer with the grinding means, a grinding fluid supply means for supplying the grinding liquid to the wafer and a mixed fluid of gas and liquid disposed on the back surface of the wafer disposed adjacent to the grinding means and ground by the grinding means. A mixed fluid ejecting means for ejecting, a drying means for drying the back surface of the wafer by jetting gas to the wafer back surface of the wafer ground by the grinding means and cleaned with the mixed fluid ejected from the mixed fluid ejecting means, and a drying means And a dry processing means for removing the grinding distortion generated on the wafer by grinding by the grinding means by dry-processing the back surface of the wafer dried in step (1). There is provided.

  According to the present invention, the wafer after grinding is washed away by the mixed fluid consisting of gas and liquid, and is reliably removed without remaining on the wafer.

  Furthermore, after the grinding waste is removed by cleaning, gas is supplied to the wafer and drying is performed, so that the problem that the grinding waste is dried and remains attached to the wafer is prevented.

  In particular, when dry polishing is performed using a dry polishing pad, the grinding waste and the grinding fluid contained in the grinding waste do not remain on the wafer, so the grinding waste and the grinding fluid are attached and contaminated. Processing the wafer with the polishing pad is prevented.

  Further, depending on the type of dry polishing pad, there is a risk that the product life of the polishing pad may be shortened or damaged due to the adhesion of moisture, but according to the present invention, the grinding liquid may adhere to the polishing pad. Therefore, the product life of the polishing pad is shortened and damage is prevented.

It is a surface side perspective view of a semiconductor wafer. It is a perspective view explaining the cutting groove formation step. It is a perspective view explaining a protection member arrangement step. 1 is a perspective view of a grinding apparatus suitable for performing a grinding step. It is a perspective view explaining a grinding step. It is a side view explaining a grinding step. It is a side view explaining a washing | cleaning step. It is a side view explaining a drying step. It is a side view explaining a dry-type process step. It is a perspective view shown about embodiment which uses a dry-type process means as a plasma etching unit.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view of a semiconductor wafer 11 before processing. A semiconductor wafer 11 shown in FIG. 1 (hereinafter also simply referred to as “wafer 11”) is made of, for example, a silicon wafer having a thickness of 700 μm, and a plurality of streets (division lines) 13 are formed in a lattice shape on the surface 11a. At the same time, devices 15 such as IC and LSI are formed in each region partitioned by the plurality of division lines 13.

  The wafer 11 configured as described above includes a device region 17 where the device 15 is formed, and an outer peripheral surplus region 19 surrounding the device region 17. A notch 12 as a mark indicating the crystal orientation of the silicon wafer is formed on the outer periphery of the wafer 11.

  Hereinafter, the processing method of the present invention for the wafer 11 thus configured will be described in detail. First, as shown in FIG. 2, a cutting groove forming step is performed in which the cutting groove 22 is cut from the surface 11a of the wafer 11 along the scheduled dividing line 13 with a cutting blade 22 to a depth reaching the finished thickness. .

  In the cutting groove forming step of the present embodiment, a cutting unit 20 having a cutting blade 22 attached to the tip of the spindle 24 is used. The wafer 11 is processed and fed in the X-axis direction by a chuck table (not shown), and a cutting groove 21 having a predetermined depth is formed by cutting a rotating cutting blade 22 along the scheduled division line 13.

  The cutting unit 20 is index-fed in the Y-axis direction, and cutting grooves 21 are formed for all the division lines 13 in the X-axis direction in FIG. Thereafter, by rotating the wafer 11 by 90 degrees, the cutting grooves 21 are formed in the same manner for all the division lines 13 in the Y-axis direction in FIG.

  The cutting groove 21 is formed so as to have a depth from the surface 11a of the wafer 11 to the finished thickness, and is divided into chips by grinding the back surface 11b of the wafer 11 by a grinding step to be described later. Thus, DBG processing is performed.

  After performing the cutting groove forming step, as shown in FIG. 3, the protective member disposing step of disposing the protective member 30 on the surface 11a of the wafer 11 is performed.

  On the surface 11 a of the wafer 11, the cutting grooves 21 are formed in a cross-beam shape, and the devices 15 are arranged at the respective portions partitioned by the cutting grooves 21.

  A protection member 30 is attached to the surface 11 a of the wafer 11 so as to protect the device 15. The protective member 30 has a glue layer 34 formed on the back surface 32 a of the base material 32. When the back surface 32 a of the base material 32 is covered with the front surface 11 a of the wafer 11, the protective member 30 is attached to the wafer 11 by the glue layer 34. Affixed to.

  After carrying out the protective member disposing step, a grinding apparatus 2 as shown in FIG. 4 is used to grind the back surface of the wafer while supplying a grinding liquid to the wafer to reduce the thickness to the finished thickness and to form the cutting groove on the wafer. A grinding step is performed in which the wafer is divided into individual chips by exposure to the back surface.

  FIG. 4 shows an embodiment of the grinding apparatus 2, holding tables 41, 41 that hold the wafer 11 (FIG. 3) on which the protection member 30 is disposed via the protection member 30, and the holding table 41. , 41 and grinding units (grinding means) 51, 53 including grinding wheels 51a, 53a for grinding the back surface of the wafer 11, and a grinding liquid is supplied to the wafer while the grinding units 51, 53 grind the wafer. Grinding fluid supply units (grinding fluid supply means) 62a, 62b and grinding units 51, 53 are disposed adjacent to each other, and the back surface of the wafer ground by the grinding units 51, 53 is composed of a mixed fluid of gas and liquid. A mixed fluid cleaning liquid ejection unit (mixed fluid cleaning liquid ejection means) 64 that ejects the cleaning liquid, and a mixed fluid cleaning liquid ejection unit that is ground by the grinding units 51 and 53. A drying unit (drying means) 66 for drying the back surface of the wafer by blowing gas to the back surface of the wafer cleaned with the mixed fluid cleaning liquid ejected from the liquid 64, and dry processing the back surface of the wafer dried by the drying unit 66. And a dry processing unit (dry processing means) 70 for removing grinding distortion generated on the wafer by grinding by the grinding units 51 and 53.

  The grinding device 2 will be described in detail. A column 82 is erected at the rear portion of the base 81, and grinding units 51 and 53 are provided on the column 82. The grinding units 51 and 53 are provided so as to be movable in an oblique direction with respect to the column 82 in plan view.

  The grinding units 51 and 53 include grinding wheels 51a and 53a that are rotationally driven by motors 51b and 53b. The grinding wheels 51a and 53a are configured to move up and down, and contact the back surface of the wafer held on the holding table 41 to grind the wafer to a predetermined thickness.

  In the base 81, a column 83 is erected at a position to be a side portion of the grinding unit 53, and the dry processing unit 70 is provided on the column 83.

  The dry processing unit 70 includes a polishing wheel 71a that is rotationally driven by a motor 71b. The polishing wheel 71a is configured to move up and down, and polishes by contacting the back surface of the wafer held on the holding table 41 to remove grinding distortion.

  A turntable 85 is provided on the base 81 so as to be rotatable in a horizontal plane. The turntable 85 is provided with four holding tables 41 and 41 that are separated by 90 degrees in the circumferential direction. When the turntable 85 is rotated, each holding table 41 and 41 has a wafer loading / unloading area. A, rough grinding region B, finish grinding region C, and dry processing region D are positioned respectively.

  On the base 81, there are provided grinding fluid supply units 62a and 62b for supplying a grinding fluid to the wafer when grinding is performed in the grinding units 51 and 53, respectively. Grinding fluid is supplied from the grinding fluid supply unit 62a to the wafer on the holding table 41 arranged in the rough grinding region B, and the holding table arranged in the finish grinding region C from the grinding fluid supply unit 62b. A grinding fluid is supplied to the wafer on 41.

  On the base 81, a mixed fluid cleaning liquid ejection unit 64 is provided for ejecting a cleaning liquid composed of a mixed fluid of gas and liquid on the back surface of the wafer ground by the grinding units 51 and 53. In the present embodiment, the cleaning liquid can be supplied to the holding tables 41 arranged in the rough grinding region B and the finish grinding region C by rotating one mixed fluid cleaning liquid ejection unit 64.

  In addition, in order to supply the cleaning liquid independently for each of the rough grinding region B and the finish grinding region C, two mixed fluid cleaning liquid ejection units may be provided, and not on the base 81 but on the turntable 85. It is good also as providing a mixed fluid washing | cleaning liquid ejection unit in this.

  On the base 81, there is provided a drying unit 66 for ejecting gas to the back surface of the wafer cleaned with the mixed fluid cleaning solution ejected from the mixed fluid cleaning solution ejecting unit 64 to dry the back surface of the wafer. A dry gas is supplied from the drying unit 66 to the wafer on the holding table 41 disposed in the dry processing region D.

  A portion on the front side of the base 81 is configured to be higher than that of the base 81, and cassette mounting tables 90 and 91 are fixed to the front end of the base 81. A cassette 92 containing wafers before grinding is placed on the cassette placing table 90, and a cassette 93 is placed on the cassette placing table 91, and wafers that have been ground are accommodated in the cassette 93.

  A recess 94 is formed in the base 81 adjacent to the cassette mounting tables 90 and 91, and a wafer transfer robot 95 is accommodated in the recess 94. The front portion of the base 81 further includes a positioning table 96 having a plurality of positioning pins 97, a wafer carry-in mechanism (loading arm) 86, a wafer carry-out mechanism (unloading arm) 87, and a ground and polished wafer. In addition, a spinner cleaning device 98 for spin drying is provided.

  Using the grinding apparatus 2 configured as described above, a grinding step for dividing the wafer into individual chips is performed. First, in the cassette 92 containing the wafer before grinding, as shown in FIG. 4, the wafer 11 in a state where the protective member 30 is adhered to the surface 11a on which the cutting groove 21 is formed is housed. Yes.

  The wafer 11 in the cassette 92 is transferred to the positioning table 96 by the wafer transfer robot 95 and then placed on the holding table 41 positioned in the wafer carry-in / out area A by the wafer carry-in mechanism 86. At this time, the wafer 11 is held on the holding table 41 so that the back surface thereof is on the upper side.

  Next, when the holding table 41 is positioned in the rough grinding region B by rotating the turntable 85, the wafer 11 is positioned immediately below the grinding wheel 51a of the grinding unit 51, as shown in FIGS. .

  Then, while rotating the holding table 41 in the direction indicated by the arrow a at, for example, 300 rpm, the grinding wheel 51a is rotated in the direction indicated by the arrow b, for example, at 6000 rpm, and the grinding wheel 51c provided at the lower portion of the grinding wheel 51a is attached to the wafer 11. Is brought into contact with the back surface 11b.

  The grinding wheel 51a is ground and fed by a predetermined amount at a predetermined grinding feed speed, and is roughly ground until the wafer 11 has a predetermined thickness. In the rough grinding, the grinding fluid 62c is supplied from the grinding fluid supply unit 62a toward the back surface 11b of the wafer 11.

  In the grinding unit 51 for performing rough grinding, for example, a grinding wheel including # 320 or more and # 400 or less abrasive grains defined by JIS standard “R6001: Grain size of grinding wheel abrasive” is mounted. A grinding wheel 51a is used.

  After carrying out this rough grinding, the turntable 85 is rotated to position the holding table 41 in the finish grinding region C. In the same manner as the rough grinding shown in FIG. 5, the grinding unit 53 (see FIG. 4) Finish grinding is performed. By this finish grinding, the wafer 11 is ground to a finish thickness (for example, a thickness of 100 μm).

  Then, when the wafer 11 is thinned to the finished thickness, the cutting groove 21 formed in advance by the cutting groove forming step appears on the back surface 11b side of the wafer 11, so that the cutting groove 21 penetrates the wafer 11. As a result, the wafer 11 is divided into individual chips.

  In addition, in the grinding unit 53 that performs finish grinding, for example, a grinding wheel including abrasive grains of # 1000 or more and # 2000 or less defined by JIS standard “R6001: Grain size of abrasive for grinding wheel” is mounted. A grinding wheel 53a is used.

  In the present embodiment described above, the two grinding units 51 and 53 are divided into rough grinding and finish grinding, and the grinding process is performed step by step to reduce the wafer to a predetermined thickness (finish thickness). However, an embodiment in which the wafer is thinned to a predetermined thickness (finished thickness) by performing grinding with one grinding unit is also conceivable.

  After performing the grinding step as described above, as shown in FIGS. 4 and 7, the mixed fluid cleaning liquid jet unit 64 is used to jet the mixed fluid 64 a composed of gas and liquid to the back surface 11 b of the wafer 11. A cleaning step for cleaning the grinding waste formed in the grinding step is performed.

  In the cleaning step, a mixed fluid cleaning liquid ejection unit 64 is used. The mixed fluid cleaning liquid jet unit 64 is positioned above the wafer 11 held by the holding table 41 and jets the mixed fluid 64 a to the wafer 11. The mixed fluid cleaning liquid jet unit 64 of the present embodiment is configured by a pipe-like member, and supports a jet part 64b that is arranged substantially horizontally so as to cross over the wafer 11, and a jet part 64b that can rotate. It is set as the structure which has the rotation support part 64c to do.

  A series of flow paths 64d through which the mixed fluid 64a flows are formed inside the ejection part 64b and the rotation support part 64c, and the flow path 64d is connected to the liquid supply source 64e and the gas supply source 64f. .

  From the liquid supply source 64e, a liquid for the purpose of removing the grinding dust 25, 25 generated by the grinding step is supplied. For example, water may be supplied. The gas supply source 64f supplies a gas for the purpose of removing the grinding dust 25, 25 generated in the grinding step. For example, air (air) taken in via a dust filter or the like is supplied. It is possible to be supplied.

  The liquid supplied from the liquid supply source 64e and the gas supplied from the gas supply source 64f are mixed along a route on the way to the mixed fluid cleaning liquid ejection unit 64 to become a mixed fluid 64a, which is supplied into the flow path 64d. Is done. In the flow path 64d, the liquid from the liquid supply source 64e and the gas from the gas supply source 64f may be mixed.

  The ejection part 64b is formed with ejection nozzles 64g and 64g having minute ejection openings at predetermined intervals, and the mixed fluid 64a in the flow path 64d is directed to the back surface 11b of the wafer 11 through the ejection nozzles 64g and 64g. On the other hand it is erupted. In addition, it is good also as a structure which provides a slit (linear opening) instead of providing the ejection nozzle 64g in the ejection part 64b, and the mixed fluid 64a is ejected from the said slit. Further, by applying ultrasonic vibration to the liquid, gas, or mixed fluid 64a, the mixed fluid 64a to which ultrasonic waves are applied is jetted, and the cleaning effect by applying ultrasonic waves may be improved. Good. The installation location of the apparatus for applying the ultrasonic vibration may be any one of the liquid supply source 64e, the gas supply source 64f, and the mixed fluid cleaning liquid ejection unit 64, or a plurality of locations.

  For the mixed fluid 64a ejected from the ejection part 64b, for example, by setting the flow rate of the liquid (for example, water) to 200 ml / min and the pressure to 0.4 MPa, the grinding dust adhering to the wafer 11 can be reliably detected. It is preferable to wash away. The predetermined pressure is preferably set as high as possible within a range in which the chip divided by the ejection of the mixed fluid 64a does not move (is not displaced), and is set as appropriate.

  As described above, the ground wafer 11 is cleaned by the mixed fluid 64a ejected at a predetermined pressure, and the grinding debris 25, 25 adhering to the wafer 11 is reliably removed without remaining on the wafer. Is done. That is, if the liquid is simply flowed over the surface of the wafer 11, there is a concern that the grinding debris 25, 25 will remain without peeling from the wafer 11, and if the gas is simply blown over the surface of the wafer 11, There is a concern that the raised grinding scraps 25 and 25 will adhere to the wafer 11 again, but by performing cleaning by jetting the mixed fluid 64a and spraying the wafer 11 on the wafer 11, the grinding scraps can be separated by liquid or gas alone. The problem which is a concern when removing 25 and 25 will be solved. Also, the grinding scraps 25, 25 between the cutting grooves 21 can be reliably removed without remaining in the cutting grooves 21.

  The above-described cleaning of the wafer 11 by the mixed fluid cleaning liquid jet unit 64 may be performed in one or both of the rough grinding by the grinding unit 51 and the finish grinding by the grinding unit 53. Preferably, it is always performed after finish grinding by the grinding unit 53.

  Further, in the mixed fluid cleaning liquid ejection unit 64 of the present embodiment, the coarse grinding region B and the finish grinding region C are alternatively washed by rotating the ejection part 64b around the rotational support part 64c. Although possible, a mixed fluid cleaning liquid ejection unit for performing cleaning independently in each of the rough grinding region B and the finish grinding region C may be provided.

  After performing the cleaning step as described above, as shown in FIG. 8, a drying step is performed in which gas is blown onto the back surface 11 b of the wafer 11 to dry the back surface 11 b of the wafer 11.

  In the drying step, a drying unit 66 is used. The drying unit 66 is for supplying a dried gas to the wafer on the holding table 41 arranged in the dry processing region D (FIG. 4). The drying unit 66 of the present embodiment is configured by a pipe-like member, and a jet part 66b that is arranged substantially horizontally so as to cross the upper side of the wafer 11, and a pivot that supports the jet part 66b in a rotatable manner. It has the structure which has the support part 66c.

  A series of flow paths 66d for circulating the drying gas 66a are formed inside the ejection part 66b and the rotation support part 66c, and the flow path 66d is connected to a gas supply source (not shown). The drying gas 66a used here is not particularly limited, but it is possible to use a gas obtained by drying the atmosphere (air) to a predetermined humidity or lower. Further, the flow path 66d may be connected to the gas supply source 64f described above, and the drying gas 66a may be supplied from the gas supply source 64f.

  The ejection portion 66b is formed with ejection nozzles 66g and 66g having minute ejection openings at a predetermined interval, and the drying gas 66a in the flow path 66d is passed through the ejection nozzles 66g and 66g to the back surface 11b of the wafer 11. Is ejected against. Instead of providing the ejection nozzle 66g in the ejection part 66b, a slit (linear opening) may be provided, and the drying gas 66a may be ejected from the slit.

  As described above, the back surface 11b of the wafer 11 after being cleaned by the mixed fluid 64a is dried by the drying gas 66a. Since this drying is performed after the grinding waste is removed by washing, the problem of the grinding waste being dried and remaining on the wafer is prevented.

  Next, after performing the above drying step, as shown in FIG. 9, a dry processing step is performed in which the back surface 11 b of the wafer 11 is dry processed to remove grinding distortion generated in the wafer 11 in the grinding step.

  In the present embodiment, a dry processing step is performed by the dry processing unit 70. At the stage where the above-described drying step is performed, the wafer 11 with the back surface 11b dried is held by the holding table 41 in the dry processing region D (FIG. 4) immediately below the dry processing unit 70. .

  Then, while rotating the holding table 41 in the direction indicated by the arrow a at 100 rpm, for example, the polishing wheel 71a is rotated in the direction indicated by the arrow b at, for example, 1600 rpm, and the polishing pad 71c provided at the lower part of the polishing wheel 71a is moved to the wafer 11. The back surface 11b is pressed and polished with a predetermined pressure (for example, 300 N).

  By polishing in this manner, grinding distortion generated on the wafer 11 can be removed, and the bending strength of the individual chips 11C and 11C formed in a divided manner can be improved.

  In this embodiment, dry polishing is performed using a dry polishing pad. In other words, polishing is performed without using a polishing liquid. Even when such dry polishing is performed, grinding waste is removed by the above-described cleaning step, and further, the back surface 11b of the wafer 11 is dried by the subsequent drying step, so that no grinding liquid remains, It is possible to prevent the wafer from being processed with a polishing pad that is contaminated with grinding scraps or grinding liquid.

  Furthermore, depending on the type of dry polishing pad, there is a risk that the product life of the polishing pad may be shortened or damaged due to moisture adhering thereto, but according to the above embodiment, the grinding liquid adheres to the polishing pad. Therefore, the product life of the polishing pad is shortened and damage is prevented.

  In the dry processing step described above, dry polishing is performed by the dry processing unit 70 (FIG. 4) using a polishing pad, and, as shown in FIG. 10, a plasma etching unit 75 is used and grinding distortion is performed by well-known plasma etching. It is good also as removing.

  According to the dry processing step by this plasma etching, even if grinding debris remains between chips in the cleaning step, this debris can be removed by etching, and grinding distortion The bending strength can be improved by removing the.

  The plasma etching unit 75 shown in FIG. 10 is an embodiment of the dry processing means. For example, the wafer 11 on the holding table 41 positioned in the dry processing region D is lifted upward and accommodated in the apparatus to perform plasma etching. And after the plasma etching, the wafer 11 is returned to the holding table 41.

  The dry processing unit 70 (FIG. 4) and the plasma etching unit 75 (FIG. 10) using the polishing pad, which is an embodiment of the dry processing means described above, are mounted on the grinding apparatus 2 and integrated with the grinding apparatus 2. It is good also as a structure (installation in what is called an in-line form) arrange | positioned side by side with the grinding apparatus 2 besides having the structure provided in general.

2 Grinding machine 11 Wafer 21 Cutting groove 30 Protection member 51 Grinding unit 53 Grinding unit 62a Grinding liquid supply unit 62b Grinding liquid supply unit 64 Mixed fluid cleaning liquid ejection unit 64a Mixed fluid 66 Drying unit 66a Drying gas 70 Dry processing unit 71c Polishing pad

Claims (2)

A wafer processing method in which a device is formed in each of the regions defined by a plurality of division lines intersecting the surface,
A cutting groove forming step for forming a cutting groove having a depth that reaches the finished thickness by cutting with a cutting blade along the line to be divided from the surface of the wafer;
After performing the cutting groove forming step, a protective member disposing step of disposing a protective member on the surface of the wafer;
After carrying out the protective member disposing step, the back surface of the wafer is ground and thinned to the finished thickness while supplying a grinding liquid to the wafer, and the cutting groove is exposed to the back surface of the wafer. Grinding step to divide the wafer into individual chips;
After performing the grinding step, a cleaning step of cleaning a grinding waste formed in the grinding step by ejecting a mixed fluid composed of a gas and a liquid to the back surface of the wafer;
After performing the cleaning step, a drying step of blowing gas to the back surface of the wafer to dry the back surface of the wafer;
After performing the drying step, dry processing step of dry processing the back surface of the wafer to remove the grinding distortion generated in the wafer in the grinding step;
For processing a wafer comprising: A holding table for holding the wafer on which the protective member is disposed via the protective member;
Grinding means including a grinding wheel for grinding the back surface of the wafer held by the holding table;
A grinding fluid supply means for supplying a grinding fluid to the wafer while the wafer is ground by the grinding means;
A mixed fluid ejecting means disposed adjacent to the grinding means and ejecting a mixed fluid of gas and liquid to the back surface of the wafer ground by the grinding means;
Drying means for spraying gas to the wafer back surface of the wafer ground by the grinding means and cleaned with the mixed fluid ejected from the mixed fluid ejecting means to dry the back surface of the wafer;
Dry processing means for dry processing the back surface of the wafer dried by the drying means and removing grinding distortion generated in the wafer by grinding by the grinding means;
Wafer processing equipment equipped with.

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