JP7251899B2 - Workpiece processing method - Google Patents

Workpiece processing method Download PDF

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JP7251899B2
JP7251899B2 JP2018231760A JP2018231760A JP7251899B2 JP 7251899 B2 JP7251899 B2 JP 7251899B2 JP 2018231760 A JP2018231760 A JP 2018231760A JP 2018231760 A JP2018231760 A JP 2018231760A JP 7251899 B2 JP7251899 B2 JP 7251899B2
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workpiece
porous portion
chuck table
processing
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JP2020093330A (en
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祐介 藤井
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Disco Corp
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Disco Corp
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Priority to KR1020190151131A priority patent/KR20200071660A/en
Priority to CN201911248258.2A priority patent/CN111312615B/en
Priority to TW108144932A priority patent/TWI808283B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Threshing Machine Elements (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)

Description

本発明は、加工ユニットとチャックテーブルとを有する加工装置によって被加工物を加工する際に用いられる被加工物の加工方法に関する。 TECHNICAL FIELD The present invention relates to a method of processing a workpiece, which is used when a workpiece is processed by a machining apparatus having a machining unit and a chuck table.

ＩＣ（Integrated Circuit）、ＬＳＩ（Large Scale Integration）等のデバイスが形成された半導体ウェーハを分割することにより、デバイスをそれぞれ備える複数のデバイスチップが製造される。また、基板上に実装された複数のデバイスチップを樹脂でなる封止材（モールド樹脂）で被覆して得たパッケージ基板を分割することにより、デバイスチップをそれぞれ備える複数のパッケージデバイスが製造される。このパッケージデバイスは、携帯電話やパーソナルコンピュータに代表される様々な電子機器に内蔵される。 By dividing a semiconductor wafer on which devices such as ICs (Integrated Circuits) and LSIs (Large Scale Integration) are formed, a plurality of device chips each having a device are manufactured. Also, by dividing a package substrate obtained by covering a plurality of device chips mounted on the substrate with a sealing material (mold resin) made of resin, a plurality of package devices each having a device chip are manufactured. . This package device is incorporated in various electronic equipment represented by mobile phones and personal computers.

近年、電子機器の小型化、薄型化に伴い、デバイスチップやパッケージデバイスにも薄型化が求められている。そこで、分割前の半導体ウェーハやパッケージ基板を研削して薄化する手法が用いられている。 In recent years, along with the miniaturization and thinning of electronic equipment, there is a demand for thinning of device chips and package devices. Therefore, a method of grinding and thinning a semiconductor wafer or a package substrate before division is used.

半導体ウェーハやパッケージ基板等の被加工物を研削する際には、例えば、被加工物を保持するチャックテーブルと、被加工物を研削する研削ユニットとを備える研削装置が用いられる。この研削ユニットには、被加工物を研削するための研削砥石を備えた研削ホイールが装着される。被加工物をチャックテーブルによって吸引保持した状態で、チャックテーブルと研削ホイールとをそれぞれ回転させながら研削砥石を被加工物に接触させることにより、被加工物が研削され、薄化される。 2. Description of the Related Art When grinding a workpiece such as a semiconductor wafer or a package substrate, for example, a grinding apparatus is used that includes a chuck table that holds the workpiece and a grinding unit that grinds the workpiece. A grinding wheel with a grinding wheel for grinding the workpiece is attached to the grinding unit. The workpiece is ground and thinned by bringing the grinding wheel into contact with the workpiece while rotating the chuck table and the grinding wheel while the workpiece is held by suction by the chuck table.

研削加工が完了すると、被加工物はチャックテーブルから取り外される。このとき、チャックテーブルから所定の流体（例えば、水とエアーとが混合された流体）を噴出させると、流体が被加工物のチャックテーブルと対向する面側に作用し、被加工物をチャックテーブルから取り外しやすくなる。 After the grinding process is completed, the workpiece is removed from the chuck table. At this time, when a predetermined fluid (for example, a mixture of water and air) is ejected from the chuck table, the fluid acts on the side of the workpiece facing the chuck table, causing the workpiece to move to the chuck table. Easier to remove from

なお、被加工物を研削すると、研削加工によって発生した屑（加工屑）がチャックテーブルによって吸引され、チャックテーブルの内部に蓄積する。そして、研削加工の完了後、被加工物を取り外すためにチャックテーブルから流体を噴出させると、チャックテーブルの内部に蓄積された加工屑が流体とともに噴出され、被加工物に付着してしまうことがある。 When the workpiece is ground, scraps (processing scraps) generated by the grinding process are sucked by the chuck table and accumulated inside the chuck table. When the fluid is ejected from the chuck table to remove the workpiece after the grinding process is completed, machining chips accumulated inside the chuck table are ejected together with the fluid and may adhere to the workpiece. be.

そこで、研削加工後には、洗浄装置等を用いて被加工物を洗浄し、被加工物に付着した加工屑を洗い流す作業が行われる。例えば特許文献１には、被加工物（洗浄対象物）の外周縁を支持しつつ、洗浄ローラによって被加工物の下面側を洗浄する洗浄装置が開示されている。 Therefore, after the grinding process, the workpiece is cleaned using a cleaning device or the like to wash away the machining waste adhering to the workpiece. For example, Patent Literature 1 discloses a cleaning apparatus that cleans the lower surface side of a workpiece (object to be cleaned) with cleaning rollers while supporting the outer peripheral edge of the workpiece (object to be cleaned).

特開２０１３－２３９４９８号公報JP 2013-239498 A

上記のように、研削装置のチャックテーブルから被加工物を取り外す際にチャックテーブルから流体を噴出させると、被加工物に加工屑が付着する。この加工屑は被加工物に強固に固着するため、研削加工後の被加工物に対して洗浄処理を施しても、被加工物に付着した加工屑が完全には除去されないことが多い。よって、チャックテーブルから流体を噴出させる際には、加工屑の被加工物への付着が極力抑制されることが望まれる。 As described above, if the fluid is ejected from the chuck table when removing the workpiece from the chuck table of the grinding apparatus, the workpiece adheres to the workpiece. Since this processing waste adheres strongly to the workpiece, it is often the case that the processing waste adhering to the workpiece is not completely removed even when the workpiece is washed after being ground. Therefore, when the fluid is ejected from the chuck table, it is desirable to suppress the adhesion of the machining waste to the workpiece as much as possible.

本発明はかかる問題に鑑みてなされたものであり、被加工物への加工屑の付着を抑制することが可能な被加工物の加工方法の提供を目的とする。 SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of processing a workpiece that can suppress the adhesion of machining waste to the workpiece.

本発明の一態様によれば、被加工物を加工する加工ユニットと、該被加工物を保持する保持面を備える第１のポーラス部と、該被加工物を保持する保持面を備え該第１のポーラス部を囲繞する第２のポーラス部と、該第１のポーラス部と該第２のポーラス部とを仕切る仕切り部と、該第２のポーラス部を囲繞する枠体と、を備えるチャックテーブルと、を有する加工装置によって該被加工物を加工する被加工物の加工方法であって、該第１のポーラス部の保持面の全体を覆うように該被加工物を該チャックテーブル上に配置し、該第１のポーラス部の保持面及び該第２のポーラス部の保持面に吸引源の負圧を作用させることにより、該被加工物を該チャックテーブルによって吸引保持する保持ステップと、該チャックテーブルによって保持された該被加工物を該加工ユニットによって加工する加工ステップと、流体供給源から供給される流体を該第１のポーラス部から噴出させ、且つ、該第２のポーラス部から該流体を噴出させずに、該チャックテーブルから該被加工物を取り外す取り外しステップと、を備える被加工物の加工方法が提供される。 According to one aspect of the present invention, there is provided a processing unit that processes a work piece, a first porous portion that includes a holding surface that holds the work piece, and a holding surface that holds the work piece. A chuck comprising a second porous portion surrounding one porous portion, a partition portion separating the first porous portion and the second porous portion, and a frame surrounding the second porous portion. and a table, wherein the workpiece is placed on the chuck table so as to cover the entire holding surface of the first porous portion. a holding step of sucking and holding the workpiece by the chuck table by applying a negative pressure of a suction source to the holding surface of the first porous portion and the holding surface of the second porous portion; a processing step of processing the workpiece held by the chuck table by the processing unit; and ejecting fluid supplied from a fluid supply source from the first porous portion and from the second porous portion. and removing the workpiece from the chuck table without ejecting the fluid.

なお、好ましくは、上記の被加工物の加工方法は、該取り外しステップ後に、該第２のポーラス部から該流体を噴出させることによって該第２のポーラス部に吸引された加工屑を該第２のポーラス部から噴出させる噴出ステップを更に備える。 Preferably, in the above-described method of processing a workpiece, after the removing step, the processing waste sucked into the second porous portion is removed from the second porous portion by ejecting the fluid from the second porous portion. It further comprises a jetting step of jetting from the porous portion of the.

本発明の一態様に係る被加工物の加工方法では、第１のポーラス部の保持面及び第２のポーラス部の保持面に負圧を作用させて被加工物を吸引保持した状態で、被加工物を加工ユニットによって加工する。その後、第１のポーラス部から流体を噴出させ、且つ、第２のポーラス部から流体を噴出させずに、チャックテーブルから被加工物を取り外す。 In the method for processing a workpiece according to one aspect of the present invention, a negative pressure is applied to the holding surface of the first porous portion and the holding surface of the second porous portion to suck and hold the workpiece. A workpiece is processed by a processing unit. After that, the workpiece is removed from the chuck table while ejecting the fluid from the first porous portion and without ejecting the fluid from the second porous portion.

上記の被加工物の加工方法を用いると、被加工物をチャックテーブル上から取り外す際、第２のポーラス部に吸引された加工屑が被加工物に向かって噴出されない。これにより、被加工物への加工屑の付着が抑制される。 When the above-described method for machining a workpiece is used, when the workpiece is removed from the chuck table, the machining scraps sucked into the second porous portion are not ejected toward the workpiece. As a result, the attachment of processing waste to the workpiece is suppressed.

被加工物を示す斜視図である。It is a perspective view which shows a to-be-processed object. 図２（Ａ）は加工装置を示す一部断面正面図であり、図２（Ｂ）はチャックテーブルを示す平面図である。FIG. 2(A) is a partially cross-sectional front view showing a processing apparatus, and FIG. 2(B) is a plan view showing a chuck table. 図３（Ａ）は加工ステップでの加工装置を示す一部断面正面図であり、図３（Ｂ）は加工ステップでの被加工物及びチャックテーブルを拡大して示す断面図である。FIG. 3A is a partial cross-sectional front view showing the processing apparatus in the processing step, and FIG. 3B is an enlarged sectional view showing the workpiece and the chuck table in the processing step. 図４（Ａ）は取り外しステップでの加工装置を示す断面図であり、図４（Ｂ）は取り外しステップでの被加工物及びチャックテーブルを拡大して示す断面図である。FIG. 4A is a sectional view showing the processing apparatus in the removing step, and FIG. 4B is an enlarged sectional view showing the workpiece and the chuck table in the removing step.

以下、添付図面を参照して本発明の一態様に係る実施形態を説明する。まず、本実施形態に係る被加工物の加工方法を用いて加工することが可能な被加工物の構成例について説明する。図１は、被加工物１１を示す斜視図である。 An embodiment according to one aspect of the present invention will be described below with reference to the accompanying drawings. First, a configuration example of a workpiece that can be processed using the method for processing a workpiece according to the present embodiment will be described. FIG. 1 is a perspective view showing a workpiece 11. FIG.

被加工物１１は、例えばシリコン等の材料を用いて円盤状に形成され、表面１１ａ及び裏面１１ｂを備える。被加工物１１は、互いに交差するように格子状に配列された複数の分割予定ライン（ストリート）１３によって複数の領域に区画されており、この複数の領域の表面１１ａ側にはそれぞれ、ＩＣ（Integrated Circuit）、ＬＳＩ（Large Scale Integration）、ＬＥＤ（Light Emitting Diode）等のデバイス１５が形成されている。 The workpiece 11 is formed in a disc shape using a material such as silicon, and has a front surface 11a and a back surface 11b. The workpiece 11 is partitioned into a plurality of regions by a plurality of division lines (streets) 13 arranged in a grid pattern so as to intersect each other. Integrated Circuit), LSI (Large Scale Integration), LED (Light Emitting Diode), and other devices 15 are formed.

なお、被加工物１１の材質、形状、構造、大きさ等に制限はない。例えば被加工物１１は、シリコン以外の半導体（ＧａＡｓ、ＩｎＰ、ＧａＮ、ＳｉＣ等）、ガラス、セラミックス、樹脂、金属等の材料でなるウェーハであってもよいし、ＣＳＰ（Chip Size Package）、ＱＦＮ（Quad Flat Non-leaded Package）等のパッケージ基板であってもよい。また、デバイス１５の種類、数量、形状、構造、大きさ、配置等にも制限はない。 The material, shape, structure, size, etc. of the workpiece 11 are not limited. For example, the workpiece 11 may be a wafer made of materials such as semiconductors other than silicon (GaAs, InP, GaN, SiC, etc.), glass, ceramics, resin, metal, etc., CSP (Chip Size Package), QFN A package substrate such as (Quad Flat Non-leaded Package) may be used. Moreover, there are no restrictions on the type, number, shape, structure, size, arrangement, etc. of the device 15 .

被加工物１１を分割予定ライン１３に沿って分割することにより、デバイス１５をそれぞれ備える複数のデバイスチップが得られる。被加工物１１の分割には、例えば、円環状の切削ブレードが装着される切削ユニットを備えた加工装置（切削装置）や、被加工物１１にレーザービームを照射するレーザー照射ユニットを備えた加工装置（レーザー加工装置）等が用いられる。 By dividing the workpiece 11 along the dividing lines 13, a plurality of device chips each having a device 15 are obtained. For dividing the workpiece 11, for example, a processing apparatus (cutting apparatus) equipped with a cutting unit to which an annular cutting blade is attached, or a machining apparatus equipped with a laser irradiation unit for irradiating the workpiece 11 with a laser beam. A device (laser processing device) or the like is used.

また、分割前の被加工物１１に対しては、デバイスチップの薄型化等を目的として研削加工が施される。この研削加工には、被加工物１１を研削するための加工装置（研削装置）が用いられる。以下では、被加工物１１の裏面１１ｂを研削することによって被加工物１１を薄化する例について説明する。 Further, the workpiece 11 before division is subjected to grinding for the purpose of thinning the device chip. A processing device (grinding device) for grinding the workpiece 11 is used for this grinding. An example of thinning the workpiece 11 by grinding the back surface 11b of the workpiece 11 will be described below.

被加工物１１の裏面１１ｂ側を研削する際は、まず、被加工物１１の表面１１ａ側に円形の保護部材（保護テープ）１７を貼付する。保護部材１７は、樹脂等でなり、被加工物１１と概ね同径に形成されている。保護部材１７が被加工物１１の表面１１ａ側に貼付されると、複数のデバイス１５が保護部材１７によって覆われて保護される。なお、被加工物１１の表面１１ａ側を保護する必要がない場合は、保護部材１７の貼付を省略できる。 When grinding the back surface 11 b side of the workpiece 11 , first, a circular protective member (protective tape) 17 is attached to the front surface 11 a side of the workpiece 11 . The protective member 17 is made of resin or the like, and is formed to have approximately the same diameter as the workpiece 11 . When the protective member 17 is attached to the surface 11a side of the workpiece 11, the plurality of devices 15 are covered with the protective member 17 and protected. In addition, when it is not necessary to protect the surface 11a side of the workpiece 11, the attachment of the protective member 17 can be omitted.

次に、被加工物１１を研削する加工ユニット（研削ユニット）を備える加工装置（研削装置）を用いて、被加工物１１を加工する。図２（Ａ）は加工装置２を示す一部断面正面図であり、図２（Ｂ）はチャックテーブル４を示す平面図である。なお、図２（Ａ）では、加工装置２の構成要素の一部をブロックで示している。 Next, the workpiece 11 is processed using a processing apparatus (grinding apparatus) having a processing unit (grinding unit) for grinding the workpiece 11 . 2A is a partially cross-sectional front view showing the processing apparatus 2, and FIG. 2B is a plan view showing the chuck table 4. FIG. In addition, in FIG. 2A, some of the constituent elements of the processing apparatus 2 are indicated by blocks.

加工装置２は、被加工物１１を保持するチャックテーブル４を備える。チャックテーブル４は、被加工物１１の形状に対応して平面視で円形に形成されている。ただし、チャックテーブル４の形状は被加工物１１の形状等に応じて適宜変更される。 The processing device 2 includes a chuck table 4 that holds a workpiece 11 . The chuck table 4 is formed in a circular shape in plan view corresponding to the shape of the workpiece 11 . However, the shape of the chuck table 4 is appropriately changed according to the shape of the workpiece 11 and the like.

チャックテーブル４は、例えばセラミックスや樹脂等を用いて形成された枠体（本体部）６を備える。枠体６の上面６ａ側には、平面視で円形の凹部６ｂが形成されている。この凹部６ｂの内部には、チャックテーブル４の中央側に配置された円盤状の第１のポーラス部８と、チャックテーブル４の外周側に配置され第１のポーラス部８を囲繞する環状の第２のポーラス部１０とが設けられている。すなわち、枠体６は第１のポーラス部８と第２のポーラス部１０とを囲繞している。 The chuck table 4 includes a frame (main body) 6 made of, for example, ceramics or resin. A concave portion 6b that is circular in plan view is formed on the upper surface 6a side of the frame 6. As shown in FIG. Inside the concave portion 6b are a disk-shaped first porous portion 8 arranged on the central side of the chuck table 4 and an annular first porous portion 8 arranged on the outer peripheral side of the chuck table 4 and surrounding the first porous portion 8. 2 porous portions 10 are provided. That is, the frame 6 surrounds the first porous portion 8 and the second porous portion 10 .

第１のポーラス部８と第２のポーラス部１０とはそれぞれ、例えばポーラスセラミックス等でなり、上下に連通するポーラス状に形成されている。第１のポーラス部８の上面は、被加工物１１を保持する円形の保持面８ａを構成し、第２のポーラス部１０の上面は、保持面８ａを囲繞し被加工物１１を保持する環状の保持面１０ａを構成する。枠体６の上面６ａ、第１のポーラス部８の保持面８ａ、及び第２のポーラス部１０の保持面１０ａは概ね同一平面上に配置されており、チャックテーブル４の上面を構成する。 The first porous portion 8 and the second porous portion 10 are each made of, for example, porous ceramics or the like, and formed in a porous shape communicating vertically. The upper surface of the first porous portion 8 constitutes a circular holding surface 8a that holds the workpiece 11, and the upper surface of the second porous portion 10 surrounds the holding surface 8a and holds the workpiece 11. constitutes the holding surface 10a. The upper surface 6 a of the frame 6 , the holding surface 8 a of the first porous portion 8 , and the holding surface 10 a of the second porous portion 10 are arranged substantially on the same plane, forming the upper surface of the chuck table 4 .

なお、第１のポーラス部８及び第２のポーラス部１０の形状は、被加工物１１の形状等に応じて適宜変更される。ただし、第１のポーラス部８は、保持面８ａの全体を被加工物１１によって覆うことが可能な大きさに形成される。例えば第１のポーラス部８は、その直径が被加工物１１の直径よりも小さくなるように形成される。 The shapes of the first porous portion 8 and the second porous portion 10 are appropriately changed according to the shape of the workpiece 11 and the like. However, the first porous portion 8 is formed in a size that allows the entire holding surface 8 a to be covered with the workpiece 11 . For example, the first porous portion 8 is formed so that its diameter is smaller than the diameter of the workpiece 11 .

また、凹部６ｂの内部には、凹部６ｂの底から上方に突出する環状の仕切り部１２が形成されている。仕切り部１２は、第１のポーラス部８と第２のポーラス部１０との間に設けられ、第１のポーラス部８と第２のポーラス部１０とを仕切っている。すなわち、仕切り部１２は、第１のポーラス部８を囲み、且つ、第２のポーラス部１０によって囲まれるように配置されている。なお、図２（Ａ）では仕切り部１２が枠体６と一体化されているが、仕切り部１２は枠体６と別途形成された後、凹部６ｂの内部に固定されてもよい。 An annular partition 12 is formed inside the recess 6b and protrudes upward from the bottom of the recess 6b. The partition part 12 is provided between the first porous part 8 and the second porous part 10 and partitions the first porous part 8 and the second porous part 10 . That is, the partition section 12 is arranged so as to surround the first porous section 8 and be surrounded by the second porous section 10 . Although the partition 12 is integrated with the frame 6 in FIG. 2A, the partition 12 may be formed separately from the frame 6 and then fixed inside the recess 6b.

第１のポーラス部８の保持面８ａは、枠体６の内部に形成された吸引路（不図示）を介してバルブ１４と接続されている。また、第２のポーラス部１０の保持面１０ａは、枠体６の内部に形成された吸引路（不図示）を介してバルブ１６と接続されている。バルブ１４とバルブ１６とはそれぞれ、バルブ１８を介してエジェクタ等でなる吸引源２０と接続され、バルブ２２ａ，２２ｂを介して流体を供給する流体供給源２４と接続されている。 The holding surface 8 a of the first porous portion 8 is connected to the valve 14 via a suction path (not shown) formed inside the frame 6 . Further, the holding surface 10 a of the second porous portion 10 is connected to the valve 16 via a suction path (not shown) formed inside the frame 6 . The valves 14 and 16 are connected to a suction source 20 such as an ejector via a valve 18, and connected to a fluid supply source 24 via valves 22a and 22b.

流体供給源２４は、バルブ２２ａと接続され水を供給する水供給源２４ａと、バルブ２２ｂと接続されエアーを供給するエアー供給源２４ｂとを備える。バルブ２２ａ，２２ｂを開くと、水供給源２４ａから供給された水とエアー供給源２４ｂから供給されたエアーとが混合され、水とエアーとを含む混合流体が生成される。 The fluid supply source 24 includes a water supply source 24a connected to the valve 22a to supply water, and an air supply source 24b connected to the valve 22b to supply air. When the valves 22a and 22b are opened, the water supplied from the water supply source 24a and the air supplied from the air supply source 24b are mixed to generate a mixed fluid containing water and air.

また、チャックテーブル４はモータ等の回転駆動源（不図示）と接続されており、この回転駆動源はチャックテーブル４を鉛直方向に概ね平行な回転軸の周りに回転させる。さらに、チャックテーブル４の下方には移動機構（不図示）が設けられており、この移動機構はチャックテーブル４を水平方向に移動させる。 The chuck table 4 is also connected to a rotary drive source (not shown) such as a motor, and this rotary drive source rotates the chuck table 4 around a rotary shaft substantially parallel to the vertical direction. Further, a moving mechanism (not shown) is provided below the chuck table 4, and this moving mechanism moves the chuck table 4 in the horizontal direction.

チャックテーブル４の上方には、被加工物１１に対して研削加工を施す加工ユニット（研削ユニット）３０が配置されている。加工ユニット３０は、昇降機構（不図示）によって支持されたスピンドルハウジング（不図示）を備えている。スピンドルハウジングにはスピンドル３２が収容されており、スピンドルハウジングから露出したスピンドル３２の下端部に円盤状のマウント３４が固定されている。 A processing unit (grinding unit) 30 for grinding the workpiece 11 is arranged above the chuck table 4 . The processing unit 30 includes a spindle housing (not shown) supported by a lifting mechanism (not shown). A spindle 32 is accommodated in the spindle housing, and a disk-shaped mount 34 is fixed to the lower end of the spindle 32 exposed from the spindle housing.

マウント３４の下面側には、マウント３４と概ね同径の研削ホイール３６が装着される。研削ホイール３６は、ステンレス、アルミニウム等の金属材料で形成された円環状のホイール基台３８を備える。また、ホイール基台３８の下面側には、直方体状に形成された複数の研削砥石４０がホイール基台３８の外周に沿って配列されている。 A grinding wheel 36 having approximately the same diameter as the mount 34 is attached to the lower surface side of the mount 34 . The grinding wheel 36 has an annular wheel base 38 made of a metal material such as stainless steel or aluminum. A plurality of rectangular parallelepiped grinding wheels 40 are arranged along the outer periphery of the wheel base 38 on the lower surface side of the wheel base 38 .

スピンドル３２の上端側（基端側）にはモータ等の回転駆動源（不図示）が接続されており、研削ホイール３６はこの回転駆動源で発生する力によって鉛直方向に概ね平行な回転軸の周りに回転する。また、加工ユニット３０の内部又は近傍には、チャックテーブル４によって保持された被加工物１１及び研削砥石４０に純水等の加工液（研削液）を供給するためのノズル（不図示）が設けられている。 A rotary drive source (not shown) such as a motor is connected to the upper end side (base end side) of the spindle 32, and the grinding wheel 36 is driven by a force generated by this rotary drive source to rotate a rotating shaft substantially parallel to the vertical direction. rotate around. A nozzle (not shown) for supplying a working liquid (grinding liquid) such as pure water to the workpiece 11 held by the chuck table 4 and the grinding wheel 40 is provided inside or near the processing unit 30 . It is

被加工物１１を研削する際は、まず、被加工物１１をチャックテーブル４によって吸引保持する（保持ステップ）。保持ステップでは、被加工物１１の表面１１ａ側（保護部材１７）とチャックテーブル４の上面とが対向するように、被加工物１１をチャックテーブル４上に配置する。 When grinding the workpiece 11, first, the workpiece 11 is suction-held by the chuck table 4 (holding step). In the holding step, the workpiece 11 is arranged on the chuck table 4 so that the surface 11a side (protective member 17) of the workpiece 11 and the upper surface of the chuck table 4 face each other.

なお、被加工物１１は、第１のポーラス部８の保持面８ａの全体が被加工物１１の表面１１ａ側によって覆われるように配置される。具体的には、被加工物１１の表面１１ａ側に形成された保護部材１７が、第１のポーラス部８の保持面８ａの全体と接触する。 The work piece 11 is arranged so that the entire holding surface 8 a of the first porous portion 8 is covered with the surface 11 a side of the work piece 11 . Specifically, the protective member 17 formed on the surface 11 a side of the workpiece 11 contacts the entire holding surface 8 a of the first porous portion 8 .

また、第２のポーラス部１０の保持面１０ａも、被加工物１１の表面１１ａ側によって覆われる。ただし、被加工物１１の大きさや形状等によっては、第２のポーラス部１０の保持面１０ａの一部が保護部材１７と接触しない場合がある。 Moreover, the holding surface 10a of the second porous portion 10 is also covered with the surface 11a side of the workpiece 11 . However, part of the holding surface 10 a of the second porous portion 10 may not contact the protective member 17 depending on the size, shape, etc. of the workpiece 11 .

例えば図２（Ａ）に示すように、被加工物１１の直径が第２のポーラス部１０の直径よりも僅かに小さい場合、第２のポーラス部１０の保持面１０ａの一部が露出した状態となる。また、被加工物１１の直径が第２のポーラス部１０の直径以上であっても、例えば被加工物１１の側面が曲面状に形成されていることにより、被加工物１１と第２のポーラス部１０との間に隙間が生じる場合がある。 For example, as shown in FIG. 2A, when the diameter of the workpiece 11 is slightly smaller than the diameter of the second porous portion 10, a portion of the holding surface 10a of the second porous portion 10 is exposed. becomes. Further, even if the diameter of the workpiece 11 is equal to or greater than the diameter of the second porous portion 10, for example, because the side surface of the workpiece 11 is formed into a curved surface, the workpiece 11 and the second porous portion 10 are separated from each other. A gap may occur between the part 10 and the part 10 .

被加工物１１をチャックテーブル４上に配置した状態で、バルブ１４、バルブ１６、及びバルブ１８を開き、バルブ２２ａ，２２ｂを閉じる。これにより、第１のポーラス部８の保持面８ａと、第２のポーラス部１０の保持面１０ａとに吸引源２０の負圧が作用し、被加工物１１がチャックテーブル４によって吸引保持される。 With the workpiece 11 placed on the chuck table 4, the valves 14, 16 and 18 are opened and the valves 22a and 22b are closed. As a result, the negative pressure of the suction source 20 acts on the holding surface 8a of the first porous portion 8 and the holding surface 10a of the second porous portion 10, and the workpiece 11 is suction-held by the chuck table 4. .

なお、第１のポーラス部８と第２のポーラス部１０との間には仕切り部１２が設けられており、第１のポーラス部８と第２のポーラス部１０との間での流体の流動は仕切り部１２によって遮断される。そのため、第１のポーラス部８での被加工物１１の吸引と第２のポーラス部１０での被加工物１１を吸引とは、それぞれ独立に制御できる。 In addition, a partition portion 12 is provided between the first porous portion 8 and the second porous portion 10 to prevent the fluid from flowing between the first porous portion 8 and the second porous portion 10. is blocked by the partition 12 . Therefore, the suction of the workpiece 11 by the first porous portion 8 and the suction of the workpiece 11 by the second porous portion 10 can be independently controlled.

図２（Ａ）に示すように、第２のポーラス部１０の保持面１０ａの一部が露出している場合、この露出した領域から吸引源２０の負圧がリークすることがある。ただし、露出した領域が僅かであればリークも小さく、第２のポーラス部１０による被加工物１１の保持に支障は生じない。 As shown in FIG. 2A, when a part of the holding surface 10a of the second porous part 10 is exposed, the negative pressure of the suction source 20 may leak from this exposed area. However, if the exposed area is small, the leak is also small, and the holding of the workpiece 11 by the second porous portion 10 is not hindered.

次に、チャックテーブル４によって保持された被加工物１１を加工ユニット３０によって加工する（加工ステップ）。本実施形態では、加工ユニット３０によって被加工物１１の裏面１１ｂ側に研削加工を施す。図３（Ａ）は加工ステップでの加工装置２を示す一部断面正面図であり、図３（Ｂ）は加工ステップでの被加工物１１及びチャックテーブル４を拡大して示す断面図である。 Next, the workpiece 11 held by the chuck table 4 is processed by the processing unit 30 (processing step). In this embodiment, the processing unit 30 grinds the back surface 11b side of the workpiece 11 . 3A is a partial cross-sectional front view showing the processing apparatus 2 in the processing step, and FIG. 3B is an enlarged sectional view showing the workpiece 11 and the chuck table 4 in the processing step. .

加工ステップでは、まず、被加工物１１を保持したチャックテーブル４を加工ユニット３０の下方に移動させる。そして、チャックテーブル４と研削ホイール３６とをそれぞれ回転させて、加工液を被加工物１１の裏面１１ｂ側に向かって供給しながらスピンドル３２を下降させる。このときのスピンドル３２の下降速度は、研削砥石４０が適切な力で被加工物１１の裏面１１ｂ側に押し当てられるように調整される。 In the processing step, first, the chuck table 4 holding the workpiece 11 is moved below the processing unit 30 . Then, the chuck table 4 and the grinding wheel 36 are rotated, and the spindle 32 is lowered while supplying the working fluid toward the back surface 11b of the workpiece 11 . The descending speed of the spindle 32 at this time is adjusted so that the grinding wheel 40 is pressed against the back surface 11b side of the workpiece 11 with an appropriate force.

研削砥石４０が被加工物１１の裏面１１ｂ側に接触すると、被加工物１１が研削されて薄化される。そして、被加工物１１が所望の厚さになると、被加工物１１の研削加工が完了する。 When the grinding wheel 40 contacts the back surface 11b side of the workpiece 11, the workpiece 11 is ground and thinned. When the workpiece 11 reaches a desired thickness, the grinding of the workpiece 11 is completed.

なお、加工ユニット３０によって被加工物１１を加工すると、チャックテーブル４上で加工屑が発生する。この加工屑は加工液によって洗い流されるが、その一部がチャックテーブル４の外周側に位置する第２のポーラス部１０に吸引されることがある。例えば、図３（Ｂ）に示すように第２のポーラス部１０の保持面１０ａの一部が露出していると、この露出した領域で加工屑５０が吸引され、第２のポーラス部１０の内部に加工屑５０が蓄積される。 When the workpiece 11 is processed by the processing unit 30 , processing chips are generated on the chuck table 4 . Although this processing waste is washed away by the processing liquid, part of it may be sucked into the second porous portion 10 located on the outer peripheral side of the chuck table 4 . For example, if a part of the holding surface 10a of the second porous portion 10 is exposed as shown in FIG. Processing waste 50 is accumulated inside.

次に、チャックテーブル４から被加工物１１を取り外す（取り外しステップ）。図４（Ａ）は取り外しステップでの加工装置２を示す断面図であり、図４（Ｂ）は取り外しステップでの被加工物１１及びチャックテーブル４を拡大して示す断面図である。 Next, the workpiece 11 is removed from the chuck table 4 (removing step). FIG. 4A is a sectional view showing the processing apparatus 2 in the removing step, and FIG. 4B is an enlarged sectional view showing the workpiece 11 and the chuck table 4 in the removing step.

チャックテーブル４から被加工物１１を取り外す際は、バルブ１４及びバルブ２２ａ，２２ｂを開き、バルブ１６及びバルブ１８を閉じる。これにより、保持面８ａ及び保持面１０ａに作用していた負圧が解除され、チャックテーブル４による被加工物１１の吸引が解除される。また、水供給源２４ａから供給された水とエアー供給源２４ｂから供給されたエアーとが混合されて流体５２が生成され、第１のポーラス部８に供給される。そして、流体５２は第１のポーラス部８の保持面８ａから上方に向かって噴出する。 When removing the workpiece 11 from the chuck table 4, the valve 14 and the valves 22a and 22b are opened, and the valves 16 and 18 are closed. As a result, the negative pressure acting on the holding surfaces 8a and 10a is released, and the suction of the workpiece 11 by the chuck table 4 is released. Further, the water supplied from the water supply source 24a and the air supplied from the air supply source 24b are mixed to generate the fluid 52, which is supplied to the first porous portion 8. FIG. Then, the fluid 52 is jetted upward from the holding surface 8a of the first porous portion 8. As shown in FIG.

なお、第１のポーラス部８と第２のポーラス部１０との間での流体５２の流動は、仕切り部１２によって遮断される。そのため、第１のポーラス部８への流体５２の供給と、第２のポーラス部１０への流体５２の供給とは、それぞれ独立に制御できる。 In addition, the flow of the fluid 52 between the first porous portion 8 and the second porous portion 10 is blocked by the partition portion 12 . Therefore, the supply of the fluid 52 to the first porous portion 8 and the supply of the fluid 52 to the second porous portion 10 can be independently controlled.

被加工物１１を取り外す際に第１のポーラス部８に流体５２を供給すると、第１のポーラス部８の内部の真空が解除されるとともに、保持面８ａから噴出した流体５２が被加工物１１の表面１１ａ側（保護部材１７）に吹き付けられる。これにより、被加工物１１の取り外しがアシストされ、被加工物１１をチャックテーブル４上から容易に取り外すことが可能となる。 When the fluid 52 is supplied to the first porous portion 8 when removing the workpiece 11 , the vacuum inside the first porous portion 8 is released, and the fluid 52 ejected from the holding surface 8 a is ejected from the workpiece 11 . is sprayed on the surface 11a side (protective member 17). As a result, removal of the workpiece 11 is assisted, and the workpiece 11 can be easily removed from the chuck table 4 .

なお、流体５２が水を含む場合、流体供給源２４から供給された流体５２が第１のポーラス部８の内部で水平方向に広がりやすく、保持面８ａの全体から流体５２が噴出しやすくなる。これにより、被加工物１１の表面１１ａ側の広範囲にわたって流体５２が作用し、被加工物１１が取り外しやすくなる。また、流体５２が水に加えてエアーも含む場合、第１のポーラス部８の保持面８ａと保護部材１７との間に入り込んだ水の表面張力がエアーによって緩和される。これにより、被加工物１１の取り外しがさらに容易になる。 When the fluid 52 contains water, the fluid 52 supplied from the fluid supply source 24 tends to spread horizontally inside the first porous portion 8, and the fluid 52 tends to jet out from the entire holding surface 8a. As a result, the fluid 52 acts over a wide area on the surface 11a side of the workpiece 11, and the workpiece 11 can be easily removed. Further, when the fluid 52 contains air in addition to water, the surface tension of water entering between the holding surface 8a of the first porous portion 8 and the protective member 17 is relaxed by the air. This makes it easier to remove the workpiece 11 .

よって、流体５２としては、水とエアーとを含む流体を用いることが特に好ましい。ただし、被加工物１１の取り外しのアシストが可能であれば、流体５２の成分に制限はない。また、流体供給源２４の構成は、流体５２の成分に応じて適宜変更される。 Therefore, it is particularly preferable to use a fluid containing water and air as the fluid 52 . However, the components of the fluid 52 are not limited as long as the removal of the workpiece 11 can be assisted. Also, the configuration of the fluid supply source 24 is appropriately changed according to the components of the fluid 52 .

ここで、仮に被加工物１１を取り外す際に第２のポーラス部１０からも流体５２を噴出させると、加工ステップで第２のポーラス部１０に吸引された加工屑５０（図４（Ｂ）参照）が、流体５２とともに被加工物１１に向かって噴出する。そして、加工屑５０は被加工物１１の表面１１ａ側（保護部材１７）に付着するとともに、被加工物１１の側面を伝って裏面１１ｂ側にも付着する。この加工屑５０は被加工物１１に強固に固着するため、その後に被加工物１１に対して洗浄処理を施しても完全には除去されないことが多い。 Here, if the fluid 52 is also ejected from the second porous portion 10 when removing the workpiece 11, the processing waste 50 (see FIG. 4B) sucked into the second porous portion 10 in the processing step ) is ejected toward the workpiece 11 together with the fluid 52 . The processing waste 50 adheres to the front surface 11a side (protective member 17) of the workpiece 11, and adheres to the back surface 11b side along the side surface of the workpiece 11 as well. Since this processing waste 50 is firmly adhered to the workpiece 11, it is often not completely removed even if the workpiece 11 is subjected to a cleaning process thereafter.

一方、本実施形態に係る加工方法では、取り外しステップを実施する際にバルブ１６が閉じられており、第２のポーラス部１０からは流体５２が噴出しない。そのため、第２のポーラス部１０の内部に蓄積した加工屑５０が被加工物１１に向かって噴出されず、被加工物１１への加工屑５０の付着が抑制される。 On the other hand, in the processing method according to this embodiment, the valve 16 is closed when the removal step is performed, and the fluid 52 does not jet out from the second porous portion 10 . Therefore, the processing waste 50 accumulated inside the second porous portion 10 is not spouted toward the workpiece 11, and adhesion of the processing waste 50 to the workpiece 11 is suppressed.

ただし、第２のポーラス部１０の内部に大量の加工屑５０が蓄積すると、被加工物１１をチャックテーブル４によって保持する際、第２のポーラス部１０による被加工物１１の吸引が弱まる恐れがある。そのため、取り外しステップを実施した後に、第２のポーラス部１０に吸引された加工屑５０を噴出させることが好ましい（噴出ステップ）。 However, if a large amount of processing waste 50 accumulates inside the second porous portion 10, there is a possibility that the suction of the workpiece 11 by the second porous portion 10 may weaken when the workpiece 11 is held by the chuck table 4. be. Therefore, it is preferable to eject the processing waste 50 sucked into the second porous portion 10 after performing the removal step (ejection step).

具体的には、被加工物１１をチャックテーブル４上から取り外した後、バルブ１６を開き、第２のポーラス部１０に流体５２を供給する。これにより、第２のポーラス部１０に吸引された加工屑５０が、流体５２とともに第２のポーラス部１０の保持面１０ａから噴出され、加工屑５０が第２のポーラス部１０の内部から排出される。このように、噴出ステップを実施することにより、加工屑５０が第２のポーラス部１０の内部に蓄積して被加工物１１の吸引が妨げられることを防止できる。 Specifically, after removing the workpiece 11 from the chuck table 4 , the valve 16 is opened to supply the fluid 52 to the second porous portion 10 . As a result, the processing waste 50 sucked into the second porous portion 10 is ejected from the holding surface 10a of the second porous portion 10 together with the fluid 52, and the processing waste 50 is discharged from the inside of the second porous portion 10. be. By performing the ejection step in this way, it is possible to prevent the processing waste 50 from accumulating inside the second porous portion 10 and hindering the suction of the workpiece 11 .

以上の通り、本実施形態に係る被加工物の加工方法では、第１のポーラス部８の保持面８ａ及び第２のポーラス部１０の保持面１０ａに負圧を作用させて被加工物１１を吸引保持した状態で、被加工物１１を加工ユニット３０によって加工する。その後、第１のポーラス部８から流体５２を噴出させ、且つ、第２のポーラス部１０から流体５２を噴出させずに、チャックテーブル４から被加工物１１を取り外す。 As described above, in the method for processing a workpiece according to the present embodiment, negative pressure is applied to the holding surface 8a of the first porous portion 8 and the holding surface 10a of the second porous portion 10 to move the workpiece 11. The workpiece 11 is machined by the machining unit 30 while being sucked and held. Thereafter, the workpiece 11 is removed from the chuck table 4 without ejecting the fluid 52 from the first porous portion 8 and the second porous portion 10 .

上記の被加工物の加工方法を用いると、被加工物１１をチャックテーブル４上から取り外す際、第２のポーラス部１０に吸引された加工屑５０が被加工物１１に向かって噴出されない。これにより、被加工物１１への加工屑５０の付着が抑制される。 When the above-described method for machining a workpiece is used, when the workpiece 11 is removed from the chuck table 4 , the machining scraps 50 sucked into the second porous portion 10 are not ejected toward the workpiece 11 . This suppresses the adhesion of the scraps 50 to the workpiece 11 .

なお、上記では、加工装置２が加工ユニット３０によって被加工物１１を研削する研削装置である場合について説明したが、加工装置２は研削装置に限られない。すなわち、本実施形態に係る被加工物の加工方法は、加工屑が発生し得る他の様々な加工にも適用することができる。 In addition, although the case where the processing apparatus 2 is a grinding apparatus which grinds the to-be-processed object 11 by the processing unit 30 was demonstrated above, the processing apparatus 2 is not restricted to a grinding apparatus. That is, the method for processing a workpiece according to the present embodiment can also be applied to various other types of processing that may generate processing waste.

例えば加工装置２は、加工ユニット３０に代えて、被加工物１１を切削するための切削ブレードが装着される加工ユニット（切削ユニット）、被加工物１１を研磨するための研磨パッドが装着される加工ユニット（研磨ユニット）、又はレーザービームの照射によって被加工物１１を加工する加工ユニット（レーザー照射ユニット）を備えていてもよい。この場合、加工装置２はそれぞれ、切削装置、研磨装置、レーザー加工装置として機能する。 For example, the processing device 2 is equipped with a processing unit (cutting unit) to which a cutting blade for cutting the workpiece 11 and a polishing pad for polishing the workpiece 11 are attached instead of the processing unit 30. A processing unit (polishing unit) or a processing unit (laser irradiation unit) that processes the workpiece 11 by irradiating it with a laser beam may be provided. In this case, the processing device 2 functions as a cutting device, a polishing device, and a laser processing device, respectively.

切削装置、研磨装置、又はレーザー加工装置を用いて被加工物１１を加工する場合にも、加工屑が発生することがある。しかしながら、本実施形態に係る被加工物の加工方法を適用することにより、被加工物１１への加工屑の付着を抑制できる。 When the workpiece 11 is processed using a cutting device, a polishing device, or a laser processing device, processing waste may also be generated. However, by applying the method for processing a workpiece according to the present embodiment, it is possible to suppress the adhesion of processing chips to the workpiece 11 .

その他、上記実施形態に係る構造、方法等は、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施できる。 In addition, the structures, methods, and the like according to the above-described embodiments can be modified as appropriate without departing from the scope of the present invention.

１１ 被加工物
１１ａ 表面
１１ｂ 裏面
１３ 分割予定ライン（ストリート）
１５ デバイス
１７ 保護部材（保護テープ）
２ 加工装置
４ チャックテーブル
６ 枠体（本体部）
６ａ 上面
６ｂ 凹部
８ 第１のポーラス部
８ａ 保持面
１０ 第２のポーラス部
１０ａ 保持面
１２ 仕切り部
１４ バルブ
１６ バルブ
１８ バルブ
２０ 吸引源
２２ａ，２２ｂ バルブ
２４ 流体供給源
２４ａ 水供給源
２４ｂ エアー供給源
３０ 加工ユニット（研削ユニット）
３２ スピンドル
３４ マウント
３６ 研削ホイール
３８ ホイール基台
４０ 研削砥石
５０ 加工屑
５２ 流体 REFERENCE SIGNS LIST 11 Work piece 11a Front surface 11b Back surface 13 Scheduled division line (street)
15 device 17 protective member (protective tape)
2 processing device 4 chuck table 6 frame (main body)
6a upper surface 6b recess 8 first porous portion 8a holding surface 10 second porous portion 10a holding surface 12 partition portion 14 valve 16 valve 18 valve 20 suction source 22a, 22b valve 24 fluid supply source 24a water supply source 24b air supply source 30 processing unit (grinding unit)
32 Spindle 34 Mount 36 Grinding Wheel 38 Wheel Base 40 Grinding Wheel 50 Chips 52 Fluid

Claims (2)

被加工物を加工する加工ユニットと、
該被加工物を保持する保持面を備える第１のポーラス部と、該被加工物を保持する保持面を備え該第１のポーラス部を囲繞する第２のポーラス部と、該第１のポーラス部と該第２のポーラス部とを仕切る仕切り部と、該第２のポーラス部を囲繞する枠体と、を備えるチャックテーブルと、
を有する加工装置によって該被加工物を加工する被加工物の加工方法であって、
該第１のポーラス部の保持面の全体を覆うように該被加工物を該チャックテーブル上に配置し、該第１のポーラス部の保持面及び該第２のポーラス部の保持面に吸引源の負圧を作用させることにより、該被加工物を該チャックテーブルによって吸引保持する保持ステップと、
該チャックテーブルによって保持された該被加工物を該加工ユニットによって加工する加工ステップと、
流体供給源から供給される流体を該第１のポーラス部から噴出させ、且つ、該第２のポーラス部から該流体を噴出させずに、該チャックテーブルから該被加工物を取り外す取り外しステップと、を備えることを特徴とする被加工物の加工方法。 a processing unit for processing a workpiece;
A first porous section having a holding surface for holding the workpiece, a second porous section having a holding surface for holding the workpiece and surrounding the first porous section, and the first porous section a chuck table comprising: a partition section that separates the section from the second porous section; and a frame that surrounds the second porous section;
A method of processing a workpiece for processing the workpiece by a processing apparatus having
The workpiece is placed on the chuck table so as to cover the entire holding surface of the first porous portion, and a suction source is attached to the holding surface of the first porous portion and the holding surface of the second porous portion. a holding step of sucking and holding the workpiece by the chuck table by applying a negative pressure of
a machining step of machining the workpiece held by the chuck table by the machining unit;
a removing step of removing the workpiece from the chuck table by ejecting fluid supplied from a fluid supply source from the first porous portion and without ejecting the fluid from the second porous portion; A method of processing a workpiece, comprising: 該取り外しステップ後に、該第２のポーラス部から該流体を噴出させることによって該第２のポーラス部に吸引された加工屑を該第２のポーラス部から噴出させる噴出ステップを更に備えることを特徴とする請求項１記載の被加工物の加工方法。 The method further comprises, after the removing step, an ejecting step of ejecting the processing waste sucked into the second porous portion from the second porous portion by ejecting the fluid from the second porous portion. 2. The method of processing a workpiece according to claim 1.
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JP5183169B2 (en) * 2007-11-28 2013-04-17 株式会社東京精密 Wafer processing equipment
JP5955635B2 (en) 2012-05-11 2016-07-20 株式会社ディスコ Cleaning device

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JP2003332410A (en) 2002-05-17 2003-11-21 Tokyo Seimitsu Co Ltd Vacuum sucking apparatus
JP2012020374A (en) 2010-07-15 2012-02-02 Disco Corp Grinding device
US20170047234A1 (en) 2015-08-11 2017-02-16 Canon Kabushiki Kaisha Imprint apparatus, and method of manufacturing article

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