TW202216365A - Polishing apparatus and polishing method - Google Patents
Polishing apparatus and polishing method Download PDFInfo
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- TW202216365A TW202216365A TW110125006A TW110125006A TW202216365A TW 202216365 A TW202216365 A TW 202216365A TW 110125006 A TW110125006 A TW 110125006A TW 110125006 A TW110125006 A TW 110125006A TW 202216365 A TW202216365 A TW 202216365A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
本發明是有關於一種研磨半導體晶圓等的被加工物之研磨裝置、及以研磨裝置研磨該被加工物之研磨方法。The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer, and a polishing method for polishing the workpiece with the polishing apparatus.
在行動電話或電腦等之電子機器上被使用之器件晶片的製造步驟中,首先會在半導體晶圓的正面形成IC(積體電路,Integrated Circuit)、LSI(大型積體電路,Large Scale Integration)等的複數個器件。接著,將該晶圓從背面側磨削來薄化至預定的厚度,且將該晶圓按每個器件來分割而形成一個個的器件晶片。In the process of manufacturing device chips used in electronic devices such as mobile phones and computers, IC (Integrated Circuit) and LSI (Large Scale Integration) are first formed on the front surface of a semiconductor wafer. multiple devices, etc. Next, the wafer is ground from the back side to be thinned to a predetermined thickness, and the wafer is divided for each device to form individual device wafers.
當磨削晶圓的背面側時,會在被磨削面形成微小的凹凸形狀而當作磨削痕跡。因此,在分割晶圓而形成的器件晶片上也會殘留微小的凹凸形狀。此微小的凹凸形狀會成為使器件晶片的抗折強度降低的主要因素。於是,已知有以下作法:在實施磨削後,藉由例如CMP(化學機械研磨,Chemical Mechanical Polishing)法等來研磨該晶圓的背面(參照專利文獻1)。When the back side of the wafer is ground, minute concavities and convexities are formed on the surface to be ground as grinding marks. Therefore, minute concavo-convex shapes remain on the device wafer formed by dividing the wafer. This minute concavo-convex shape is a major factor in reducing the flexural strength of the device wafer. Then, there is known a method of polishing the back surface of the wafer by, for example, a CMP (Chemical Mechanical Polishing) method after grinding (refer to Patent Document 1).
對晶圓等的被加工物進行研磨之研磨裝置具備保持該被加工物之工作夾台、及裝設有研磨墊之研磨單元,前述研磨墊會研磨已保持在該工作夾台之該被加工物。當使用研磨裝置來研磨被加工物時,可將微小的凹凸去除而將被加工物加工成鏡面。A polishing apparatus for polishing a workpiece such as a wafer includes a work chuck that holds the workpiece, and a polishing unit equipped with a polishing pad that polishes the workpiece that has been held on the work chuck. thing. When a polishing device is used to polish a workpiece, it is possible to remove minute irregularities and process the workpiece into a mirror surface.
在研磨裝置中,會在被加工物的研磨時將研磨漿料作為研磨液來供給到該被加工物之被研磨面。研磨漿料為例如分散有磨粒之藥液。研磨漿料不僅以化學性及機械性的方式作用而有助於研磨,也有助於因研磨而產生之研磨屑的排出。研磨漿料可從設置在中心的供給路來供給到研磨墊,並在研磨墊與被加工物之間行進而到達被加工物的外周。 先前技術文獻 專利文獻 In the polishing apparatus, a polishing slurry is supplied as a polishing liquid to the polished surface of the workpiece during polishing of the workpiece. The abrasive slurry is, for example, a chemical liquid in which abrasive grains are dispersed. The polishing slurry acts not only chemically and mechanically to contribute to polishing, but also contributes to the discharge of abrasive dust generated by polishing. The polishing slurry can be supplied to the polishing pad from a supply path provided in the center, and travel between the polishing pad and the workpiece to reach the outer periphery of the workpiece. prior art literature Patent Literature
專利文獻1:日本特開平8-99265號公報Patent Document 1: Japanese Patent Application Laid-Open No. 8-99265
發明欲解決之課題The problem to be solved by the invention
已到達被加工物的外周之包含研磨屑的研磨漿料會從被加工物的被研磨面掉落並堆積、固著於工作夾台的保持面的外周部。並且,若在完成被加工物的研磨後將該被加工物從工作夾台上搬出時,已固著於該工作夾台的上表面之研磨屑會殘留成圍繞原本存在有該被加工物之區域。The polishing slurry containing grinding dust that has reached the outer periphery of the workpiece falls from the polished surface of the workpiece, accumulates, and is fixed to the outer peripheral portion of the holding surface of the table. Furthermore, when the workpiece is removed from the work table after the grinding of the workpiece is completed, the grinding debris that has been fixed on the upper surface of the table will remain around the place where the workpiece originally existed. area.
在將研磨墊接下來要研磨的被加工物搬入工作夾台上之時,會有此已固著之研磨屑進入該工作夾台以及該被加工物之間等,而成為搬入之妨礙的情形。例如,雖然為了去除已固著之研磨屑而考慮有將洗淨水供給至工作夾台的保持面的外周部之作法,但要將已固著之研磨屑去除並不容易。When the workpiece to be polished by the polishing pad is carried into the table, the fixed grinding dust may enter between the table and the workpiece, and it may become an obstacle to the transfer. . For example, a method of supplying washing water to the outer peripheral portion of the holding surface of the work chuck is conceivable in order to remove the fixed grinding dust, but it is not easy to remove the fixed grinding dust.
又,為了在已到達被加工物的外周部之包含研磨屑的研磨漿料固著之前將該研磨漿料沖洗掉,而考慮有以下作法:於正在以研磨墊研磨被加工物之時,將充分之量的洗淨液供給至工作夾台的保持面的外周部。然而,若該洗淨液混入到已供給到研磨墊與被加工物之間的研磨漿料而讓研磨漿料變稀的話,會有無法合宜地實施研磨步驟之疑慮。In addition, in order to wash away the polishing slurry containing the polishing dust that has reached the outer peripheral portion of the workpiece before the polishing slurry is fixed, a method is considered as follows: when the workpiece is being polished with the polishing pad, A sufficient amount of cleaning liquid is supplied to the outer peripheral portion of the holding surface of the work chuck. However, if the cleaning liquid is mixed into the polishing slurry that has been supplied between the polishing pad and the workpiece, and the polishing slurry is diluted, there is a possibility that the polishing step cannot be properly performed.
本發明是有鑒於所述之問題點而作成的發明,其目的在於提供一種可以將已固著於工作夾台的外周部之研磨屑去除之研磨裝置及研磨方法。 用以解決課題之手段 The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a polishing apparatus and a polishing method which can remove the polishing dust fixed to the outer peripheral portion of the table. means of solving problems
根據本發明的一個態樣,可提供一種研磨裝置,是研磨被加工物之研磨裝置,其特徵在於:包含:工作夾台,具有保持面,且對已載置於該保持面之該被加工物進行吸引保持;研磨單元,一邊對已被該工作夾台所保持之該被加工物供給研磨漿料一邊以研磨墊研磨該被加工物;及高壓水蒸氣噴射單元,具備有對該工作夾台的該保持面噴射高壓水蒸氣之噴嘴,可以從該高壓水蒸氣噴射單元對已堆積在該保持面的外周部之研磨屑噴射高壓水蒸氣,來將該研磨屑從該保持面去除。According to one aspect of the present invention, a grinding device can be provided, which is a grinding device for grinding a workpiece, which is characterized by comprising: a work chuck having a holding surface, and a grinding device for grinding the workpiece placed on the holding surface. The workpiece is sucked and held; a grinding unit is used to grind the workpiece with a polishing pad while supplying a polishing slurry to the workpiece held by the work chuck; and a high-pressure steam jet unit is provided with the work chuck The nozzle for spraying high-pressure water vapor on the holding surface can spray high-pressure water vapor from the high-pressure water vapor spraying unit to the grinding dust accumulated on the outer peripheral portion of the holding surface, so as to remove the grinding dust from the holding surface.
根據本發明的其他的一個態樣,可提供一種研磨方法,是使用了研磨裝置之研磨方法,前述研磨裝置具備有:工作夾台,對已載置於保持面之被加工物進行吸引保持;及研磨單元,一邊對已被該工作夾台所保持之該被加工物供給研磨漿料一邊以研磨墊研磨該被加工物,前述研磨方法的特徵在於具備以下步驟: 保持步驟,將該被加工物載置於該保持面而以該工作夾台來保持; 研磨步驟,一邊對已被該工作夾台所保持之該被加工物供給研磨漿料一邊以該研磨墊研磨該被加工物; 搬出步驟,將在該研磨步驟中經研磨之該被加工物從該工作夾台搬出;及 研磨屑去除步驟,對已堆積在該工作夾台的該保持面的外周部之研磨屑噴射高壓水蒸氣,來去除該研磨屑。 發明效果 According to another aspect of the present invention, there can be provided a grinding method using a grinding device, wherein the grinding device includes: a work chuck for sucking and holding the workpiece placed on the holding surface; And a grinding unit, while supplying a polishing slurry to the workpiece held by the working chuck, grinding the workpiece with a polishing pad, the aforementioned grinding method is characterized by having the following steps: Holding step, the workpiece is placed on the holding surface and held by the work chuck; Grinding step, while supplying abrasive slurry to the workpiece held by the work chuck, grinding the workpiece with the polishing pad; a carrying-out step, carrying out the workpiece that has been ground in the grinding step from the work chuck; and In the grinding dust removal step, high-pressure water vapor is sprayed on the grinding dust accumulated on the outer peripheral portion of the holding surface of the work chuck to remove the grinding dust. Invention effect
在本發明之一態樣的研磨裝置及研磨方法中,是一邊對被加工物供給研磨漿料一邊以研磨墊研磨該被加工物。當研磨被加工物時,所產生之研磨屑會堆積並固著在工作夾台的保持面的外周部。在此,若對已固著在保持面的外周部之研磨屑噴射高壓水蒸氣,已固著的研磨屑會因受熱且水被送入而軟化。因此,當持續進行高壓水蒸氣的噴射時,可以比較容易地將已固著之研磨屑從保持面去除。若可以從保持面去除研磨屑,便可讓新的被加工物不受妨礙地載置在該保持面。In the polishing apparatus and the polishing method of one aspect of the present invention, the workpiece is polished with a polishing pad while supplying the polishing slurry to the workpiece. When the workpiece is ground, the generated grinding dust accumulates and is fixed on the outer peripheral portion of the holding surface of the table. Here, when high-pressure water vapor is sprayed on the grinding dust fixed on the outer peripheral portion of the holding surface, the fixed grinding dust is heated and water is sent in and softened. Therefore, when the high-pressure steam is continuously sprayed, the fixed abrasive dust can be removed from the holding surface relatively easily. If the grinding dust can be removed from the holding surface, a new workpiece can be placed on the holding surface without hindrance.
從而,根據本發明的一個態樣,可提供一種可以將已固著於工作夾台的外周部之研磨屑去除之研磨裝置及研磨方法。Therefore, according to one aspect of the present invention, it is possible to provide a polishing apparatus and a polishing method that can remove the polishing dust fixed to the outer peripheral portion of the work chuck.
用以實施發明之形態Form for carrying out the invention
參照附加圖式,說明本發明的一個態樣之實施形態。針對以本實施形態之研磨裝置及研磨方法所研磨之被加工物進行說明。於圖3中包含有將半導體晶圓等的被加工物1示意地顯示的立體圖。An embodiment of one aspect of the present invention will be described with reference to the accompanying drawings. The object to be polished by the polishing apparatus and polishing method of the present embodiment will be described. FIG. 3 includes a perspective view schematically showing a
被加工物1可為例如以矽、SiC(碳化矽)、或者其他的半導體等的材料來形成之晶圓、或是由藍寶石、玻璃、石英等的材料所形成之大致圓板狀的基板。被加工物1的正面1a藉由經配置排列成格子狀的複數條分割預定線(切割道)5而被區劃成複數個區域,且在該複數個區域的每一個中形成有IC或LSI等的器件7。最終,可藉由沿著分割預定線5來分割被加工物1,而形成一個個的器件晶片。The
被加工物1是藉由磨削背面1b而被薄化。在已被磨削之被加工物1的背面1b,會形成被稱為磨削痕跡之微小的凹凸形狀。若直接在此狀態下沿著分割預定線5分割被加工物1來製造器件晶片,會在該器件晶片殘留微小的凹凸形狀,而成為使該器件晶片的抗折強度降低的主要因素。於是,會對已磨削背面1b之被加工物1的背面1b側進行研磨,將該背面1b的微小的凹凸去除來進行平坦化。如此一來,便不會在器件晶片殘留該微小的凹凸形狀。The
在研磨被加工物1的背面1b側時,會為了保護該被加工物1的正面1a側而事先貼附保護膠帶3。保護膠帶3會保護被加工物1的正面1a側免於受到對被加工物1的背面1b之研磨或被加工物1之搬送等之時所施加的衝擊,且防止在器件7產生損傷。When polishing the
保護膠帶3具有基材與糊層(接著劑層),前述基材是具有可撓性的薄膜狀,前述糊層形成於該基材的其中一面。例如,關於基材,可採用聚烯烴、聚對苯二甲酸乙二酯、聚氯乙烯、或聚苯乙烯等。又,關於糊層(接著劑層),可採用例如矽氧橡膠、丙烯酸系材料、環氧系材料等。The
接著,說明將被加工物1的背面1b作為被研磨面來研磨之本實施形態的研磨裝置。圖1是示意地顯示研磨裝置2的立體圖。研磨裝置2具有支撐各構成之基台4。於基台4的前側部分的上表面設置有片匣載置台6a、6b。Next, the grinding|polishing apparatus of this embodiment which grinds the
在片匣載置台6a上可載置例如容置有研磨前的被加工物1之片匣8a。在片匣載置台6b可載置例如用於容置研磨後的被加工物1之片匣8b。在基台4上安裝設置有相鄰於片匣載置台6a、6b來搬送被加工物1之被加工物搬送機器人10。On the cassette mounting table 6a, the
在基台4的前側部分的上表面更配設有定位工作台12與被加工物搬入機構(裝載臂)14,前述定位工作台12是以複數個定位銷來夾住被加工物1而調整該被加工物1的位置,前述被加工物搬入機構14將被加工物1載置於工作夾台20。此外,配設有將被加工物1從工作夾台20搬出之被加工物搬出機構(卸載臂)16、及將經研磨之被加工物1洗淨以及旋轉乾燥之旋轉洗淨裝置52。A positioning table 12 and a workpiece carrying mechanism (loading arm) 14 are further disposed on the upper surface of the front side portion of the
在基台4的後側部分的上表面設置有開口4a。在該開口4a內具備有X軸移動工作台18,前述X軸移動工作台18將吸引保持被加工物1之工作夾台20載置於上表面。X軸移動工作台18是藉由未圖示之X軸方向移動機構而可朝X軸方向移動。X軸移動工作台18可藉由X軸方向移動機構的功能來定位到搬出入區域22與加工區域24,前述搬出入區域22是在工作夾台20上裝卸被加工物1之區域,前述加工區域24是對被吸引保持在該工作夾台20上之被加工物1進行研磨加工之區域。An
在工作夾台20的上表面,露出有與被加工物1同等之直徑的圓板狀的多孔質構件。工作夾台20的上表面是成為保持被加工物1的保持面20a。工作夾台20在內部具備吸引路(未圖示),前述吸引路將一端連通到該多孔質構件且將另一端連接到未圖示之吸引源。當使該吸引源作動時,負壓會作用於已載置在保持面20a上之被加工物1,而可將該被加工物1吸引保持於工作夾台20。又,工作夾台20可以繞著垂直於保持面20a的軸而旋轉。On the upper surface of the table 20, a disk-shaped porous member having the same diameter as the
在加工區域24的上方配設有研磨被加工物1之研磨單元26。於研磨裝置2的基台4的後方端部豎立設置有支撐部28,可藉由此支撐部28支撐研磨單元26。於支撐部28的前表面設有朝Z軸方向伸長之一對Z軸導軌30,且在各個Z軸導軌30上可滑動地安裝有Z軸移動板32。Above the
在Z軸移動板32的背面側(後表面側)設置有螺帽部(未圖示),在此螺帽部螺合有平行於Z軸導軌30的Z軸滾珠螺桿34。在Z軸滾珠螺桿34的一端部連結有Z軸脈衝馬達36。只要以Z軸脈衝馬達36使Z軸滾珠螺桿34旋轉,Z軸移動板32即沿著Z軸導軌30在Z軸方向上移動。在Z軸移動板32的前表面側下部固定有研磨單元26。如果使Z軸移動板32在Z軸方向上移動,研磨單元26即可以在Z軸方向上移動。A nut portion (not shown) is provided on the back side (rear surface side) of the Z-
研磨單元26具備主軸40與研磨輪44,前述主軸40藉由連結在基端側的馬達而旋轉,前述研磨輪44藉由固定具46來固定在已配設於該主軸40的前端側的安裝座42。該馬達設置在主軸殼體38內,當使該馬達作動後,研磨輪44即隨著主軸40的旋轉而旋轉。The grinding
圖2是示意地顯示研磨輪44的研磨面側的立體圖。研磨輪44具備研磨墊44b與輪座44a,前述研磨墊44b是以例如直徑比被加工物1的背面1b更大之毛氈料的胺甲酸酯等所形成,前述輪座44a供該研磨墊44b固定。FIG. 2 is a perspective view schematically showing the grinding surface side of the
在輪座44a中,於和固定有研磨墊44b之側的面為相反側的面上設置有供固定具46進入之複數個固定孔(未圖示)。在研磨輪44的輪座44a與研磨墊44b,形成有在厚度方向上貫穿於中央之貫通孔,且該貫通孔的研磨墊44b側的端部為研磨液供給口54。In the
如圖1中以虛線所示,在研磨單元26的內部形成有在Z軸方向上貫穿於該研磨單元26之研磨液供給路50。研磨液供給路50的上端側會連接於研磨液供給源48,在被加工物1的研磨時,會從該研磨液供給源48通過該研磨液供給路50朝形成於該研磨墊44b的中央部之研磨液供給口54(參照圖2)供給稱為研磨漿料之研磨液。As shown by the dotted line in FIG. 1 , inside the polishing
研磨漿料是分散有磨粒(游離磨粒)之藥液,可因應於被加工物1的材質等來適當選擇磨粒的材質、磨粒的粒徑、分散介質的種類等。The polishing slurry is a chemical solution in which abrasive grains (free abrasive grains) are dispersed, and the material of the abrasive grains, the particle size of the abrasive grains, the type of dispersion medium, and the like can be appropriately selected according to the material of the
作為磨粒,可以使用例如二氧化矽、氧化鋁、二氧化鋯、二氧化錳、二氧化鈰、膠質二氧化矽(colloidal silica)、氣相二氧化矽(fumed silica)、水鋁石(boehmite)、α-三羥鋁石(bayerite)、鑽石等。作為分散介質,可以使用例如溶解有醋酸鉀、氯化鉀、氫氧化鉀、氫氧化鈉、碳酸銨、碳酸氫鉀、碳酸氫鈉、咪唑(imidazole)、吡唑(pyrazole)、吡𠯤(pyrazine)之鹼水溶液。不過,包含於研磨漿料之構件並示非限定於此,亦可添加其他的添加劑等。As abrasive grains, for example, silica, alumina, zirconia, manganese dioxide, ceria, colloidal silica, fumed silica, boehmite can be used. ), α-bayerite, diamond, etc. As the dispersion medium, for example, potassium acetate, potassium chloride, potassium hydroxide, sodium hydroxide, ammonium carbonate, potassium hydrogencarbonate, sodium hydrogencarbonate, imidazole, pyrazole, pyrazine can be used. ) of the alkaline aqueous solution. However, the member contained in the polishing slurry is not limited to this, and other additives and the like may be added.
在對已被定位到加工區域24之工作夾台20所保持之被加工物1進行研磨時,會將研磨墊44b配設於被加工物1的上方。並且,使研磨輪44與工作夾台20以繞著沿著Z軸方向之各自的軸的方式旋轉,且使該研磨輪44下降來使研磨墊44b抵接於被加工物1。此時,為了將研磨漿料供給到被加工物1與研磨墊44b之間,使研磨液供給源48作動,而將研磨漿料送到研磨液供給路50。When polishing the
圖5是示意地顯示研磨被加工物1之情形的立體圖。在研磨被加工物1之時,宜例如將工作夾台20之旋轉數設為300rpm左右,並將研磨輪44之旋轉數設為1000rpm左右。FIG. 5 is a perspective view schematically showing a state in which the
將工作夾台20的位置預先調整成研磨墊44b的研磨液供給口54被被加工物1堵塞。因此,從研磨液供給口54所供給的該研磨漿料會留在被加工物1上。當使研磨墊44b與被加工物1一邊相互抵接一邊以繞著沿著Z軸方向之軸的方式來旋轉時,研磨漿料會侵入研磨墊44b與被加工物1的被研磨面(背面1b)之間。The position of the table 20 is adjusted in advance so that the polishing
當以研磨墊44b研磨被加工物1時,會從被研磨面(背面1b)產生研磨屑。該研磨屑會被研磨漿料攝入並朝向研磨墊44b的外側排出。攝入有研磨屑之研磨漿料56不久之後即到達被加工物1的背面1b的外周部,並掉落到工作夾台20的保持面20a的外周部20b。When the
之後,一部分的研磨漿料56會從工作夾台20脫落並從形成於研磨裝置2的基台4的開口4a之排水口4b排出。另一方面,已掉落在工作夾台20的保持面20a的外周部20b之研磨漿料的其他的一部分,會在外周部20b上乾燥,且與磨削屑一起固著於該外周部20b。在被加工物1的背面1b中,雖然會因研磨產生加工熱而將研磨漿料的溫度維持得相對較高,但因為已掉落到保持面20a的外周部20b之研磨漿料的溫度會急遽減少地降低,所以易於增進固著。After that, a part of the polishing
圖6是示意地顯示將經研磨之被加工物1從工作夾台20搬出之情形的立體圖。如圖6所示,在工作夾台20的保持面20a的外周部20b會殘留已固著之研磨屑9。FIG. 6 is a perspective view schematically showing a state in which the
在研磨裝置2中會進行:將已容置在片匣8a的複數個被加工物1接連地搬出並載置到工作夾台20、以研磨單元26來研磨、從該工作夾台20搬出、以旋轉洗淨裝置52洗淨並容置到片匣8b。然後,會在外周部20b殘留有已固著之研磨屑9的保持面20a載置接著要被研磨之被加工物1。In the polishing apparatus 2 : successively unloading the plurality of
若重複複數個被加工物1的研磨後,研磨屑9會接連地堆積於保持面20a的外周部20b。並且,若已固著於外周部20b之研磨屑9的量增加後,在將新的被加工物1載置於工作夾台20時,恐有研磨屑9會進入被加工物1與保持面20a之間的疑慮。在此情況下,因為無法以工作夾台20來合宜地保持被加工物1,所以會變得無法以研磨單元26合宜地研磨被加工物1。When the grinding of the
例如,雖然可考慮對研磨屑9噴射水來洗淨工作夾台20的保持面20a之作法,但僅單純地噴射水,洗淨效果低且無法將研磨屑9完全去除。又,雖然也可考慮以機械性的方式研磨工作夾台20的保持面20a之作法,但是會有已固著於保持面20a的研磨屑9被拖曳而在保持面20a產生損傷之疑慮。For example, it is possible to spray water on the grinding
於是,在本實施形態之研磨裝置2中,是以高壓水蒸氣對保持面20a的外周部20b固著有研磨屑9之工作夾台20進行洗淨。研磨裝置2在例如實施被加工物1之搬出入之搬出入區域22的附近設置高壓水蒸氣噴射單元58。Therefore, in the
圖7(A)是示意地顯示被高壓水蒸氣噴射單元58噴射高壓水蒸氣60之工作夾台20的立體圖。高壓水蒸氣噴射單元58是具備例如在Z軸方向上伸長之軸部58a、從軸部58a的上端在水平方向上伸長之臂部58b、及設置在臂部58b的前端之噴嘴58c的管狀的構件。高壓水蒸氣噴射單元58亦可例如藉由旋轉軸部58a而使臂部58b旋轉,來將噴嘴58c定位在預定的位置。FIG. 7(A) is a perspective view schematically showing the
在軸部58a的下端連接有未圖示之高壓水蒸氣供給源。該高壓水蒸氣供給源具備例如將水加熱至預定的溫度之加熱部(未圖示)。高壓水蒸氣噴射單元58是例如以0.3MPa左右之壓力將已加熱至105℃左右之水蒸氣噴射到工作夾台20的保持面20a的外周部20b。A high-pressure steam supply source (not shown) is connected to the lower end of the
在對工作夾台20的保持面20a的外周部20b進行洗淨時,宜例如使工作夾台以30rpm左右的旋轉數來旋轉。如此一來,可對保持面20a的外周部20b涵蓋全周來噴射高壓水蒸氣60。When cleaning the outer
若對已固著在保持面20a的外周部20b之研磨屑9噴射高壓水蒸氣60後,因為研磨屑9被加熱且接觸到水,所以研磨屑9會軟化。並且,若持續進行高壓水蒸氣60的噴射,不久之後即可將研磨屑9從保持面20a的外周部20b剝離並去除。When the high-
再者,在從高壓水蒸氣噴射單元58噴射高壓水蒸氣60的期間,宜從形成工作夾台20的保持面20a之多孔質構件噴出水。在此情況下,因為已從外周部20b剝離之研磨屑9可在不會進入該多孔質構件的情形下朝工作夾台20的保持面20a的外側排出,所以可以抑制已剝離之研磨屑9對保持面20a的再附著等的問題。In addition, it is preferable to spray water from the porous member forming the holding
在此,高壓水蒸氣噴射單元58的噴嘴58c宜例如朝向鉛直方向(Z軸方向)的下方。水蒸氣因為有在環境氣體中容易上升之傾向,所以當從正上方朝保持面20a的外周部20b噴射高壓水蒸氣60時,會變得易於讓高壓水蒸氣60有效率地作用在研磨屑9。Here, the
又,高壓水蒸氣噴射單元58的噴嘴58c亦可和工作夾台20的保持面20a的外周部20b的被噴射位置中的工作夾台20的旋轉方向相向,而以預定的角度來相對於Z軸方向傾斜。在此情況下,因為將高壓水蒸氣60對載置於保持面20a的外周部20b且旋轉移動之研磨屑9從相反於行進方向之方向來噴射,所以變得易於讓高壓水蒸氣60強力地作用於研磨屑9。不過,在本實施形態之研磨裝置2中,噴嘴58c的方向並非限定於此。In addition, the
如以上所說明,在本實施形態之研磨裝置2中,可以對已固著於工作夾台20的保持面20a的外周部20b之研磨屑9噴射高壓水蒸氣,而可以容易地去除該研磨屑9。圖7(B)是示意地顯示已從保持面20a的外周部20b去除研磨屑9之工作夾台20的立體圖。因為保持面20a已被洗淨的工作夾台20可以毫無問題地吸引保持新的被加工物1,所以可以用研磨單元26合宜地研磨該被加工物1。As described above, in the
接著,說明以研磨裝置2研磨被加工物1,並將工作夾台20的保持面20a的外周部20b洗淨之本實施形態的研磨方法。圖8(A)是示意地顯示本實施形態之研磨方法的各步驟的流程的流程圖。Next, the grinding|polishing method of this embodiment which grinds the to-
在本實施形態之研磨方法中,首先實施將被加工物1載置於保持面20a並以工作夾台20進行保持之保持步驟S10。圖4是示意地顯示保持步驟S10的立體圖。In the grinding|polishing method of this embodiment, the holding|maintenance step S10 of placing the
在保持步驟S10中,會將X軸移動工作台18預先定位在搬出入區域22,並以被加工物搬入機構14將經定位工作台12定位到預定的位置之被加工物1搬入到保持面20a上。此時,將貼附有保護膠帶3之被加工物1的正面1a朝向保持面20a,且將成為被研磨面的背面1b朝向上方。並且,使工作夾台20的吸引源作動,而以工作夾台20來吸引保持被加工物1。並且,使X軸移動工作台18移動至加工區域24。In the holding step S10 , the X-axis moving table 18 is preliminarily positioned in the carry-in
接著,實施研磨步驟S20,前述研磨步驟S20是一邊對已保持在工作夾台20之被加工物1供給研磨漿料一邊以研磨墊研磨該被加工物1。圖5是示意地顯示研磨步驟S20的立體圖。在研磨步驟S20中,使工作夾台20及研磨輪44以繞各自的軸的方式旋轉。然後,從研磨液供給源48透過研磨液供給路50將研磨漿料供給至被加工物1的背面1b,並且使研磨單元26下降而使研磨墊44b接觸於該背面1b。Next, a polishing step S20 is performed, in which the
此時,研磨漿料會進入研磨墊44b與被加工物1的背面1b之間,且被加工物1的背面1b側會被研磨而變得平坦。從被加工物1等所產生之研磨屑會被研磨漿料攝入並被搬運至被加工物1的外周側。並且,已攝入有研磨屑之研磨漿料56會掉落到工作夾台20的保持面20a的外周部20b,且一部分的研磨屑等會固著在外周部20b。At this time, the polishing slurry enters between the
接著,實施將在研磨步驟S20中經研磨之被加工物1從工作夾台20搬出之搬出步驟S30。在搬出步驟S30中,是使X軸移動工作台18移動至搬出入區域22,並解除由工作夾台20所進行之被加工物1的吸引保持,且以被加工物搬出機構16將被加工物1搬送至旋轉洗淨裝置52。並且,以旋轉洗淨裝置52將被加工物1洗淨及乾燥,且以被加工物搬送機器人10將被加工物1容置至片匣8b。Next, the carrying out step S30 of carrying out the
在本實施形態之研磨方法中,在將被加工物1從工作夾台20搬出後,會實施研磨屑去除步驟S40,前述研磨屑去除步驟S40是對已堆積在工作夾台20的保持面20a的外周部20b之研磨屑9噴射高壓水蒸氣60,而將該研磨屑9去除。圖7(A)是示意地顯示研磨屑去除步驟S40的立體圖。In the polishing method of the present embodiment, after the
在研磨屑去除步驟S40中,是將高壓水蒸氣噴射單元58的噴嘴58c朝向工作夾台20的保持面20a的外周部20b。然後,使高壓水蒸氣60從噴嘴58c朝保持面20a的外周部20b噴出。此時,以預定的旋轉速度使工作夾台20旋轉。如此一來,已固著於外周部20b之研磨屑9會因被加熱並且接觸到水而軟化,且可藉由進一步的高壓水蒸氣60的噴射而被去除。In the polishing dust removal step S40 , the
又,在研磨屑去除步驟S40中,可以藉由使水從構成保持面20a之多孔質構件噴出,來防止已從保持面20a的外周部20b去除之研磨屑9往該多孔質構件之進入。圖7(B)是示意地顯示已被洗淨且研磨屑9已被去除之工作夾台20的立體圖。如以上所說明,在本實施形態之研磨方法中,可以容易地從保持面20a的外周部20b去除研磨屑9。In addition, in the grinding dust removal step S40, by spraying water from the porous member constituting the holding
再者,在本實施形態之研磨裝置2中,亦可在加工區域24的附近設置朝工作夾台20的保持面20a噴射高壓水蒸氣60之高壓水蒸氣噴射單元58。並且,在本實施形態之研磨方法中,亦可在實施研磨步驟S20的期間實施研磨屑去除步驟S40。圖8(B)是顯示在研磨步驟S20中實施研磨屑去除步驟S40的情況下之本實施形態之研磨方法的各步驟的流程的流程圖。Furthermore, in the
若將高壓水蒸氣噴射單元58設置在加工區域24的附近,在藉由研磨單元26實施被加工物1的研磨時,可以從高壓水蒸氣噴射單元58對工作夾台20的保持面20a的外周部20b噴射高壓水蒸氣60。在此情況下,可以在已到達外周部20b之包含研磨屑的研磨漿料之溫度降低且乾燥而固著之前,利用高壓水蒸氣60從外周部20b去除研磨漿料。If the high-pressure
在此情況下,會有以下疑慮:高壓水蒸氣60進入研磨墊44b與被加工物1的背面1b之間而使研磨漿料的濃度降低。然而,和例如對保持面20a的外周部20b噴射高壓之水的情況相比較,從高壓水蒸氣噴射單元58供給到工作夾台20的保持面20a之水的量是極為少量的。因此,高壓水蒸氣60的噴射對研磨造成的影響很少。In this case, there is a possibility that the high-
在此情況下,因為可以在將已完成研磨的被加工物1從工作夾台20搬出後,立即將新的被加工物1搬入工作夾台20,所以可以有效率地研磨複數個被加工物1。In this case, since the
此外,在本實施形態之研磨方法中,研磨屑去除步驟S40亦可在保持步驟S10之前實施。圖8(C)是示意地顯示在保持步驟S10之前實施研磨屑去除步驟S40的情況下之被加工物之研磨方法的各步驟的流程的流程圖。In addition, in the polishing method of the present embodiment, the polishing dust removal step S40 may be implemented before the holding step S10. FIG. 8(C) is a flowchart schematically showing the flow of each step of the grinding method of the workpiece in the case where the grinding dust removal step S40 is carried out before the holding step S10.
例如在接連地以研磨裝置2研磨複數個被加工物1時,會成為以下問題:於將新的被加工物1搬入工作夾台20之時,源自在那之前已被研磨單元26研磨之被加工物1的研磨屑9已固著在保持面20a的外周部20b。於是,亦可在實施保持步驟S10之前實施研磨屑去除步驟S40而藉由高壓水蒸氣60的噴射來洗淨保持面20a。For example, when a plurality of
亦即,研磨屑去除步驟S40也可以考慮為為了合宜地研磨被加工物1而事先實施之步驟。又,研磨屑去除步驟S40也可以考慮為將在研磨步驟S20中因被加工物1的研磨而產生且已固著在保持面20a的外周部20b之研磨屑9去除之步驟。That is, the grinding dust removal step S40 can also be considered as a step performed in advance in order to polish the
無論是何種情況,本實施形態之研磨方法都可對以研磨裝置2所研磨之所有的被加工物1發揮如下之效果:以工作夾台20合宜地保持被加工物1且合宜地研磨被加工物1。因為既減少花費在工作夾台20的更換或洗淨之工時,也減少研磨單元26的停止時間,所以被加工物1的加工效率也會提高。In any case, the polishing method of the present embodiment can exert the following effects on all the
再者,本發明並不限定於上述實施形態之記載,可作各種變更而實施。例如,在上述實施形態中,雖然說明了以研磨被加工物1之研磨裝置2來研磨被加工物1的情況,但本發明的一個態樣並非限定於此。例如,研磨裝置2亦可除了研磨被加工物1之研磨單元26以外,還具有磨削被加工物1之磨削單元(未圖示)。並且,亦可為以該磨削單元來磨削已被工作夾台20所保持之被加工物1,且在那之後以研磨單元26來處理。In addition, this invention is not limited to the description of the said embodiment, Various changes can be made and implemented. For example, in the above-described embodiment, the case where the
在此情況下,在工作夾台20的保持面20a的外周部20b,會成為除了研磨屑9以外也堆積磨削屑之情形。即使是在此情況下,若從高壓水蒸氣噴射單元58朝該外周部20b噴出高壓水蒸氣,仍然可以將磨削屑和研磨屑9一起去除。從而,在將新的被加工物1載置於工作夾台20時,不會有研磨屑9及磨削屑妨礙由工作夾台20所進行之該被加工物1的合宜的保持之情形。In this case, in addition to the grinding
另外,上述實施形態之構造、方法等,只要在不脫離本發明之目的之範圍內,均可適當變更而實施。In addition, the structure, method, etc. of the above-mentioned embodiment can be suitably changed and implemented in the range which does not deviate from the objective of this invention.
1:被加工物
1a:正面
1b:背面
2:研磨裝置
3:保護膠帶
4:基台
4a:開口
4b:排水口
5:分割預定線
6a,6b:片匣載置台
7:器件
8a,8b:片匣
9:研磨屑
10:被加工物搬送機器人
12:定位工作台
14:被加工物搬入機構(裝載臂)
16:被加工物搬出機構(卸載臂)
18:X軸移動工作台
20:工作夾台
20a:保持面
20b:外周部
22:搬出入區域
24:加工區域
26:研磨單元
28:支撐部
30:Z軸導軌
32:Z軸移動板
34:Z軸滾珠螺桿
36:Z軸脈衝馬達
38:主軸殼體
40:主軸
42:安裝座
44:研磨輪
44a:輪座
44b:研磨墊
46:固定具
48:研磨液供給源
50:研磨液供給路
52:旋轉洗淨裝置
54:研磨液供給口
56:研磨漿料
58:高壓水蒸氣噴射單元
58a:軸部
58b:臂部
58c:噴嘴
60:高壓水蒸氣
X,Y,Z:方向
S10:保持步驟
S20:研磨步驟
S30:搬出步驟
S40:研磨屑去除步驟
1: processed object
1a: front
1b: Back
2: Grinding device
3: Protective tape
4:
圖1是示意地顯示研磨裝置的立體圖。 圖2是示意地顯示研磨輪的立體圖。 圖3是示意地顯示將保護構件貼附於被加工物的正面之情形的立體圖。 圖4是示意地顯示將被加工物載置於工作夾台的保持面之情形的立體圖。 圖5是示意地顯示研磨被加工物之情形的立體圖。 圖6是示意地顯示將經研磨之被加工物從工作夾台的保持面搬出之情形的立體圖。 圖7(A)是示意地顯示對工作夾台的保持面的外周部進行洗淨之情形的立體圖,圖7(B)是示意地顯示保持面已被洗淨之工作夾台的立體圖。 圖8(A)是顯示被加工物之研磨方法之一例的各步驟的流程的流程圖,圖8(B)是顯示被加工物之研磨方法的其他之一例的各步驟的流程的流程圖,圖8(C)是顯示被加工物之研磨方法的另外的其他之一例的各步驟的流程的流程圖。 FIG. 1 is a perspective view schematically showing a polishing apparatus. FIG. 2 is a perspective view schematically showing a grinding wheel. 3 is a perspective view schematically showing a state in which a protective member is attached to the front surface of a workpiece. FIG. 4 is a perspective view schematically showing a state in which a workpiece is placed on a holding surface of a table. FIG. 5 is a perspective view schematically showing a state of grinding a workpiece. FIG. 6 is a perspective view schematically showing a state in which the ground workpiece is carried out from the holding surface of the table. FIG. 7(A) is a perspective view schematically showing a state in which the outer peripheral portion of the holding surface of the table is cleaned, and FIG. 7(B) is a perspective view schematically showing the table with the holding surface cleaned. FIG. 8(A) is a flowchart showing the flow of each step of an example of a method for polishing a workpiece, and FIG. 8(B) is a flowchart showing the flow of each step in another example of the method for polishing a workpiece, FIG. 8(C) is a flowchart showing the flow of each step of another example of the polishing method of the workpiece.
9:研磨屑 9: Grinding dust
20:工作夾台 20: Work clamp table
20a:保持面 20a: Keep Faces
20b:外周部 20b: Peripheral part
58:高壓水蒸氣噴射單元 58: High pressure water vapor injection unit
58a:軸部 58a: Shaft
58b:臂部 58b: Arm
58c:噴嘴 58c: Nozzle
60:高壓水蒸氣 60: High pressure water vapor
Claims (2)
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JP2020-120358 | 2020-07-14 | ||
JP2020120358A JP7490311B2 (en) | 2020-07-14 | 2020-07-14 | Polishing apparatus and polishing method |
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TW202216365A true TW202216365A (en) | 2022-05-01 |
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US (1) | US20220016740A1 (en) |
JP (1) | JP7490311B2 (en) |
KR (1) | KR20220008761A (en) |
CN (1) | CN113997193A (en) |
TW (1) | TW202216365A (en) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0899265A (en) | 1994-09-30 | 1996-04-16 | Disco Abrasive Syst Ltd | Polishing device |
DE19522525A1 (en) * | 1994-10-04 | 1996-04-11 | Kunze Concewitz Horst Dipl Phy | Method and device for fine cleaning of surfaces |
US6332835B1 (en) * | 1997-11-20 | 2001-12-25 | Canon Kabushiki Kaisha | Polishing apparatus with transfer arm for moving polished object without drying it |
US6217422B1 (en) * | 1999-01-20 | 2001-04-17 | International Business Machines Corporation | Light energy cleaning of polishing pads |
JP2001062714A (en) | 1999-08-26 | 2001-03-13 | Hiroshima Nippon Denki Kk | Polishing device |
JP4617028B2 (en) * | 2001-08-17 | 2011-01-19 | 株式会社ディスコ | Processing strain remover |
JP2007035973A (en) | 2005-07-27 | 2007-02-08 | Fujitsu Ltd | Semiconductor manufacturing method and polishing equipment |
JP2012106293A (en) | 2010-11-15 | 2012-06-07 | Disco Corp | Method and apparatus for polishing wafer |
JP2016043471A (en) | 2014-08-26 | 2016-04-04 | 株式会社荏原製作所 | Substrate processing apparatus |
JP6517108B2 (en) | 2015-08-05 | 2019-05-22 | 株式会社ディスコ | CMP polisher |
KR20200026396A (en) * | 2018-08-31 | 2020-03-11 | 삼성전자주식회사 | Chemical mechanical polishing apparatus |
US11628478B2 (en) * | 2019-05-29 | 2023-04-18 | Applied Materials, Inc. | Steam cleaning of CMP components |
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US20220016740A1 (en) | 2022-01-20 |
KR20220008761A (en) | 2022-01-21 |
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