TWI769294B - polishing pad - Google Patents
polishing pad Download PDFInfo
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- TWI769294B TWI769294B TW107128810A TW107128810A TWI769294B TW I769294 B TWI769294 B TW I769294B TW 107128810 A TW107128810 A TW 107128810A TW 107128810 A TW107128810 A TW 107128810A TW I769294 B TWI769294 B TW I769294B
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- polishing
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- grinding
- polishing liquid
- supply path
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
在研磨墊與工件之間適當地提供研磨液。 A polishing liquid is appropriately supplied between the polishing pad and the workpiece.
一種研磨墊,安 裝在研磨裝置的研磨單元上且為圓板狀,該研磨裝置具備:保持台,保持工件;以及該研磨單元,研磨保持於該保持台的工件;該研磨墊的特徵在於具備:研磨液供給路徑,在厚度方向上貫穿中央部;槽,形成於接觸該工件的面,並且到達該研磨液供給路徑;以及栓狀構件,具有在該厚度方向上貫穿的多個孔,並且配設成阻塞住該研磨液供給路徑。 A polishing pad, an A disc-shaped polishing unit mounted on a polishing device, the polishing device having: a holding table for holding a workpiece; and the polishing unit for polishing the workpiece held on the holding table; the polishing pad is characterized by being provided with: a polishing liquid supply a path penetrating the central portion in the thickness direction; a groove formed on a surface contacting the workpiece and reaching the polishing liquid supply path; and a plug-shaped member having a plurality of holes penetrating in the thickness direction and arranged to block stop the slurry supply path.
Description
本發明涉及安裝在研磨裝置上的研磨墊。 The present invention relates to a polishing pad mounted on a polishing apparatus.
在用於手機或電腦等電子設備之元件晶片的製造過程中,首先,在作為半導體之晶圓的正面上,形成IC(Integrated Circuit,積體電路)、LSI(Large Scale Integration,大型積體電路)等多個元件。接著,從背面側研削該晶圓並且薄化至預定的厚度,針對每個元件分割該晶圓以形成一個個的元件晶片。 In the manufacturing process of component chips used in electronic devices such as mobile phones and computers, first, IC (Integrated Circuit, integrated circuit), LSI (Large Scale Integration, large-scale integrated circuit) are formed on the front surface of the semiconductor wafer. ) and other components. Next, the wafer is ground from the back side and thinned to a predetermined thickness, and the wafer is divided for each element to form individual element wafers.
該晶圓的研削是利用研削裝置實施。該研削裝置具有:保持台,保持晶圓;以及研削單元,研削該晶圓,且該研削單元具備:主軸;以及研削輪,安裝在該主軸下端。該研削輪包含研削磨石,接觸該晶圓以研削該晶圓。對於晶圓的研削,會使用研削裝置,其具有:粗研削用研削單元,包含具有相對較大的磨粒之研削磨石;以及精研削用研削單元,包含具有相對較小的磨粒之研削磨石。 The grinding of the wafer is carried out using a grinding apparatus. The grinding device includes: a holding table for holding a wafer; and a grinding unit for grinding the wafer, and the grinding unit includes a main shaft; and a grinding wheel attached to the lower end of the main shaft. The grinding wheel includes a grinding stone that contacts the wafer to grind the wafer. For the grinding of wafers, a grinding apparatus is used, which has: a grinding unit for rough grinding, which includes a grinding stone with relatively large abrasive grains; and a grinding unit for fine grinding, which includes grinding with relatively small abrasive grains millstone.
若研削該晶圓的背面側時,會有於在被研削面上形成微小凹凸形狀的趨勢。因此,已知在實施研削之後,例如,透過CMP(Chemical Mechanical Polishing,化學機械拋光)法研磨該晶圓的背面,去除該微小的凹凸(參照專利文獻2)。 When the back surface side of the wafer is ground, the surface to be ground tends to form minute concavo-convex shapes. Therefore, it is known that after grinding, for example, the back surface of the wafer is polished by a CMP (Chemical Mechanical Polishing) method to remove the minute irregularities (see Patent Document 2).
研磨晶圓等工件的研磨裝置具備:保持台,保持該工件;以及研磨墊,研磨該工件。該研磨墊的直徑比該晶圓的直徑大,在研磨該晶圓時配設該研磨墊,以覆蓋保持於該保持台的晶圓的整個被加工面。然後,使該研磨墊和保持該晶圓的保持台以彼此平行的各個旋轉軸為中心而旋轉,當使該研磨墊抵接該晶圓時則研磨該晶圓。 A polishing apparatus for polishing a workpiece such as a wafer includes a holding table for holding the workpiece, and a polishing pad for polishing the workpiece. The diameter of the polishing pad is larger than the diameter of the wafer, and the polishing pad is arranged to cover the entire processed surface of the wafer held on the holding table when polishing the wafer. Then, the polishing pad and the holding table holding the wafer are rotated around respective rotation axes parallel to each other, and the wafer is polished when the polishing pad is brought into contact with the wafer.
在研磨墊的中央部形成有研磨液供給路徑,在厚度方向上貫穿該研磨墊,在研磨晶圓時,通過該研磨液供給路徑向該晶圓供給研磨液。該研磨液例如是磨粒分散的藥液(slurry,漿)。在研磨工件時,不只以化學和機械性 地起作用而有助於研磨,也有助於排出經由研磨而產生的研磨屑。因此,有需要對整個被加工面適當地供給該研磨液,所以例如在研磨墊的研磨面上形成槽。 A polishing liquid supply path is formed in the center of the polishing pad, penetrates the polishing pad in the thickness direction, and when polishing a wafer, the polishing liquid is supplied to the wafer through the polishing liquid supply path. The polishing liquid is, for example, a slurry in which abrasive particles are dispersed. When grinding workpieces, not only chemical and mechanical It acts on the ground to help grinding, and it also helps to discharge the grinding dust generated by grinding. Therefore, it is necessary to appropriately supply the polishing liquid to the entire surface to be processed, so for example, grooves are formed on the polishing surface of the polishing pad.
[習知技術文獻] [Previously known technical literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本特開2000-288881號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2000-288881
[專利文獻2]日本特開平8-99265號公報 [Patent Document 2] Japanese Patent Laid-Open No. 8-99265
例如,使該研磨墊抵接工件,以研磨諸如直徑200mm或直徑300mm之相對較大直徑的工件時,由於該研磨墊的該研磨液供給路徑的下端因工件而被阻塞住,因此該研磨液停留在該研磨液供給路徑內。在研磨時,使形成該槽的研磨墊和被保持於該保持台的工件一邊抵接,一邊以繞著互相平行的各個軸的方式旋轉。然後,在該研磨墊與被加工面之間,適當地供給該研磨液。 For example, when the polishing pad is brought into abutment with a workpiece for polishing a relatively large diameter workpiece such as 200 mm in diameter or 300 mm in diameter, since the lower end of the polishing liquid supply path of the polishing pad is blocked by the workpiece, the polishing liquid stay in the polishing liquid supply path. At the time of polishing, the polishing pad forming the groove and the workpiece held by the holding table are brought into contact with each other and rotated around respective axes parallel to each other. Then, the polishing liquid is appropriately supplied between the polishing pad and the surface to be processed.
另一方面,相對直徑較小的工件,特別是在直徑比該研磨墊的半徑小的工件之狀況下,即使配設該研磨墊,以覆蓋工件的整個表面,該研磨液供給路徑的下端仍可能不被該工件阻塞住。然後,即使對該研磨液供給路徑供給研磨液,由於該研磨液的大部分會流出,因此無法通過形成於研磨面的槽對該工件的被加工面適當地供給該研磨液。若無法適當地供給該研磨液,則無法適當地實施該工件的研磨。 On the other hand, a workpiece with a relatively small diameter, especially in the case of a workpiece whose diameter is smaller than the radius of the polishing pad, even if the polishing pad is arranged to cover the entire surface of the workpiece, the lower end of the polishing liquid supply path still remains. May not be blocked by the workpiece. Then, even if the polishing liquid is supplied to the polishing liquid supply path, since most of the polishing liquid flows out, the polishing liquid cannot be appropriately supplied to the workpiece surface of the workpiece through the grooves formed in the polishing surface. If the polishing liquid cannot be appropriately supplied, the workpiece cannot be properly polished.
本發明是鑑於上述問題點而完成,其目的在於提供一種研磨墊,可以在研磨墊與工件之間適當地供給研磨液。 The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a polishing pad capable of appropriately supplying a polishing liquid between the polishing pad and the workpiece.
根據本發明的一個態樣,提供一種研磨墊,安裝在研磨裝置的研磨單元上且為圓板狀,該研磨裝置具備:保持台,保持工件;以及該研磨單元,研磨保持於該保持台的工件,該研磨墊的特徵在於具備:研磨液供給路徑,在厚度方向上貫穿中央部;槽,形成於接觸該工件的面,並且到達該研磨液供給路徑;以及栓狀構件,具有在該厚度方向上貫穿的多個孔,並且配設成阻塞住該研磨液供給路徑。 According to an aspect of the present invention, there is provided a polishing pad mounted on a polishing unit of a polishing apparatus and having a disk shape, the polishing apparatus including: a holding table for holding a workpiece; and the polishing unit for polishing a workpiece held by the holding table A workpiece, and the polishing pad is characterized by comprising: a polishing liquid supply path penetrating a central portion in the thickness direction; a groove formed on a surface contacting the workpiece and reaching the polishing liquid supply path; and a plug-shaped member having a thickness of A plurality of holes penetrating in the direction are arranged so as to block the polishing liquid supply path.
在本發明的一個態樣的研磨墊上形成有研磨液供給路徑,在厚度方向上貫穿該研磨墊,在研磨工件時,向該研磨液供給路徑供給研磨液。在該研磨墊上配設有栓狀構件,以阻塞住該研磨液供給路徑,並且在該栓狀構件上形成有多個孔,在該厚度方向上貫穿。因此,該研磨液藉由通過該孔而通過該栓狀構件。 A polishing liquid supply path is formed on the polishing pad of one aspect of the present invention, penetrates the polishing pad in the thickness direction, and supplies the polishing liquid to the polishing liquid supply path when polishing a workpiece. A plug-shaped member is disposed on the polishing pad to block the polishing liquid supply path, and a plurality of holes are formed in the plug-shaped member to penetrate in the thickness direction. Therefore, the polishing liquid passes through the plug-like member by passing through the hole.
通過該栓狀構件的該孔之該研磨液在從該孔的下方被排出時,分散並且分布至該研磨液供給路徑的內壁面。然後,該研磨液被供給至到達該研磨液供給路徑之槽,並且透過該槽將該研磨液供給至工件的被加工面的整個區域。 When the polishing liquid passing through the hole of the plug-like member is discharged from below the hole, it is dispersed and distributed to the inner wall surface of the polishing liquid supply path. Then, the polishing liquid is supplied to the groove that reaches the polishing liquid supply path, and the polishing liquid is supplied to the entire area of the workpiece surface of the workpiece through the groove.
因此,根據本發明的一個態樣,提供一種研磨墊,可以在研磨墊與工件之間適當地供給研磨液。 Therefore, according to one aspect of the present invention, there is provided a polishing pad in which a polishing liquid can be appropriately supplied between the polishing pad and a workpiece.
1:工件 1: Workpiece
3:保護膠帶 3: Protective tape
2:研磨裝置 2: Grinding device
4:基台 4: Abutment
4a:開口 4a: Opening
6a.6b:卡匣載置台 6a.6b: Cassette stage
8a.8b:卡匣 8a.8b: Cassette
10:工件搬送機器手臂 10: Workpiece conveying robot arm
12:定位台 12: Positioning table
14:工件搬入機構(裝載臂) 14: Workpiece loading mechanism (loading arm)
16:工件搬出機構(卸載臂) 16: Workpiece unloading mechanism (unloading arm)
18:X軸移動台 18: X-axis moving table
20:保持台 20: Hold Desk
20a:保持面 20a: Keep Faces
20b:吸引路徑 20b: Path of Attraction
22:搬入搬出區域 22: Moving in and out of the area
24:加工區域 24: Processing area
26:研磨單元 26: Grinding unit
28:支撐部 28: Support Department
30:Z軸導軌 30: Z-axis guide
32:Z軸移動板 32: Z-axis moving board
34:Z軸滾珠螺桿 34: Z-axis ball screw
36:Z軸脈衝馬達 36: Z-axis pulse motor
38:主軸外殼 38: Spindle housing
40:主軸 40: Spindle
42:安裝件 42: Mounting pieces
44:研磨墊 44: Polishing pad
46:固定具 46: Fixtures
48:研磨液供給源 48: Grinding fluid supply source
50:研磨液供給路徑 50: Grinding liquid supply path
52:旋轉清洗裝置 52: Rotary cleaning device
54:基材層 54: substrate layer
56:研磨層 56: abrasive layer
58:螺孔 58: screw hole
60:研削液供給路徑 60: Grinding fluid supply path
62:槽 62: Groove
64:栓狀構件 64: Bolt-like member
66:孔 66: Hole
68:研磨液 68: Grinding fluid
圖1是示意性地表示研磨裝置的的立體圖。 FIG. 1 is a perspective view schematically showing a polishing apparatus.
圖2(A)是示意性地表示從基材層側看到的研磨墊的立體圖,圖2(B)是示意性地表示從研磨層側看到的研磨墊的立體圖。圖2(C)是示意性地表示從研磨層側看到的研磨墊的俯視圖。 FIG. 2(A) is a perspective view schematically showing the polishing pad viewed from the base layer side, and FIG. 2(B) is a perspective view schematically showing the polishing pad viewed from the polishing layer side. FIG. 2(C) is a plan view schematically showing the polishing pad viewed from the polishing layer side.
圖3是示意性地表示使用研磨墊的研磨步驟的剖面圖。 3 is a cross-sectional view schematically showing a polishing step using a polishing pad.
參照附圖說明關於本發明的一個態樣的實施例。本實施例的研磨墊被安裝在研磨裝置上。關於利用該研磨裝置研磨的工件與研磨該工件的研磨裝置,使用圖1進行說明。圖1是示意性地表示研磨半導體晶圓等的工件1的研磨裝置2的立體圖。
Embodiments relating to one aspect of the present invention will be described with reference to the accompanying drawings. The polishing pad of the present example was attached to a polishing apparatus. The workpiece polished by the polishing apparatus and the polishing apparatus for polishing the workpiece will be described with reference to FIG. 1 . FIG. 1 is a perspective view schematically showing a
在研磨裝置2加工的工件1例如是由矽、SiC(碳化矽),或是其他的半導體等的材料,抑或是藍寶石、玻璃、石英等的材料所構成之大致圓板狀的基板。工件1的表面透過排列成格子狀的多條分割預定線(切割道)劃分多個區域,在該多個區域的各自中形成有IC等的元件。最後,沿著該分割預定線分割工件1,而形成一個個的元件晶片。
The
工件1透過研削背面而被薄化。被研削的該工件1的背面有形成微小凹凸形狀的趨勢。因此,在實施研削之後,研磨該工件1的背面,以去除該微小的凹凸。在研磨工件1的背面側時,可以在該工件1的正面黏貼保護膠帶3。保護膠帶3保護工件1的正面側以免受到在諸如針對工件1的背面研磨時或搬送工件1時被施加的衝擊,而防止元件上產生損害。
The
保護膠帶3具有:薄膜狀的基材,具有可撓性;糊層(黏著劑層),形成在該基材的一個表面上。例如,對於基材使用PO(polyolefin,聚烯烴)、PET(polyethylene terephthalate,聚對苯二甲酸乙二酯)、聚氯乙烯、或是聚苯乙烯等。然後,對於糊層(接著劑層),例如,使用矽膠橡膠、丙烯酸系材料,環氧樹脂系材料等。
The
研磨裝置2具有支撐每個構造的基台4。基台4的前側部分的上表面設有卡匣載置台6a、6b。卡匣載置台6a上例如載置有卡匣8a,容納研磨前的工件1。卡匣載置台8b上例如載置有卡匣8b,用於容納研磨後的工件1。基台4上安裝有工件搬送機器手臂10,比鄰卡匣載置台6a、6b,並且搬送工件1。
The grinding
基台4的前側部分的上表面上進一步配設:定位台12,利用多個定位銷定位工件1的位置;工件搬入機構(裝載臂)14,將工件1載置在保持台20上;工件搬出機構(卸載臂)16,從保持台20搬出工件1;以及旋轉清洗裝置52,清洗以及旋轉乾燥研磨過的工件1。
The upper surface of the front side part of the
基台4的後側部分的上表面設有開口4a。在該開口4a的內部具備X軸移動保持台18,其上表面放置有吸引保持工件1的保持台(卡盤台)20。該X軸移動台18透過未圖示的X軸方向移動機構而可以在X軸方向上移動。該X軸移動台18被定位在:透過X軸方向移動機構的功能在保持台20上裝卸工件1之搬入搬出區域22;以及研磨加工被吸引保持在該保持台20上的工件1之加工區域24。
The upper surface of the rear side portion of the
該保持台20的上表面成為保持面20a,保持該工件1。該保持台20的內部具備吸引路徑20b(參照圖3),其一端通到該保持台20的保持面20a,另一端連接至未圖示的吸引源。使該吸引源作動時,則負壓作用於被放置在該保持面20a上的工件1,該工件1被吸引保持在保持台20上。然後,該保持台20能夠以繞著垂直於該保持面20a的軸的方式旋轉。
The upper surface of the holding table 20 is the holding
在該加工區域24的上方配設研磨單元26,研磨該工件1。在研磨裝置2的基台4的後方端部立設支撐部28,透過此支撐部28支撐研磨單元26。在
支撐部28的前面設置在Z軸方向上伸長的一對Z軸導軌30,Z軸移動板32可滑動地安裝在各個的Z軸導軌30上。
A grinding
Z軸移動板32的背面側(後面側)裝設有螺母部(未圖示),平行於Z軸導軌30的Z軸滾珠螺桿34則螺合於此螺母部。Z軸滾珠螺桿34的一端部連接有Z軸脈衝馬達36。若利用Z軸脈衝馬達36使Z軸滾珠螺桿34旋轉,Z軸移動板32沿著Z軸導軌30在Z軸方向上移動。
A nut portion (not shown) is mounted on the rear side (rear side) of the Z-
Z軸移動板32的前面側下部固定有該研磨單元26。若使Z軸移動板32在Z軸方向上移動,則該研磨單元26可以在Z軸方向上移動。
The grinding
該研磨單元26具備:主軸40,透過連接至基端側的馬達旋轉;本實施例的研磨墊44,透過固定具46固定在安裝件42,安裝件42配設於該主軸40的前端側。在主軸外殼38內具備該馬達,當使該馬達作動時,該研磨墊44依據該主軸40的旋轉而旋轉。
The polishing
在該研磨單元26的內部形成有研磨液供給路徑50,在Z軸方向上貫穿該研磨單元26。該研磨液供給路徑50的上端側連接至研磨液供給源48,在研磨工件1時,從該研磨液供給源48通過該研磨液供給路徑50對形成在該研磨墊44的中央部的研磨液供給路徑60(參照圖3)供給研磨液。
A polishing
在研磨被保持於定位在加工區域24之保持台20之工件1時,將該研磨墊44配設在該工件1的上方,以覆蓋工件1的整個被研磨面。然後,以繞著沿著Z軸方向的各個的軸之方式使該研磨墊44和保持台20旋轉,並且使該研磨墊44下降而抵接工件1。此時,為了在該工件1與該研磨墊44之間供給研磨液,使該研磨液供給源48作動,對該研磨液供給路徑50輸送研磨液。
When polishing the
例如,使該研磨墊44抵接工件1,以研磨比研磨墊44的半徑大的工件1時,由於該研磨墊44的該研磨液供給路徑60的下端經由工件1被阻塞住,因此該研磨液停留在該工件1上。由於在研磨時,使該研磨墊44與工件1一邊互相抵接,一邊以繞著沿著Z軸方向的軸之方式旋轉,故該研磨液被適當地供給至該研磨墊44與該工件1的被加工面之間。
For example, when the
另一方面,在研磨其徑小於該研磨墊44的半徑之工件1時,即使使該研磨墊44抵接該工件1,亦會有該研磨墊44的該研磨液供給路徑60沒被工件1阻塞住的情況。然後,即使對該研磨液供給路徑60提供研磨液,由於該研磨液
的大部分會流出,因此無法對該工件1的被加工面適當地供給該研磨液。若無法適當地對被加工面供給該研磨液,則無法適當地實施該工件1的研磨。
On the other hand, when polishing the
因此,為了在研磨其直徑小於該研磨墊44的半徑的工件1時也能對該被加工面適當地供給研磨液,而使用本實施例的研磨墊44。接著,更詳細地描述該研磨墊44。
Therefore, even when polishing the
該研磨墊44是圓板狀,具有:基材層54,在該研磨墊44被安裝在該研磨單元26的安裝件42上時,接觸該安裝件42;以及研磨層56,在研磨該工件1時,接觸該工件1。圖2(A)是示意性地表示從基材層54側看到的研磨墊44的立體圖,圖2(B)是示意性地表示從研磨層56側看到的研磨墊44的立體圖。圖2(C)是示意性地表示從研磨層56側看到的研磨墊44的俯視圖。
The
如圖2(A)所示,在該基材層54上形成螺孔58。將該研磨墊44固定在安裝件42上時,具有螺紋的固定具46被旋入該螺孔58。此外,如圖2(B)所示,在接觸該研磨層56的工件1的面上形成有槽62。在研磨墊44的中央部形成有在厚度方向上貫穿該研磨墊44的研磨液供給路徑60,該槽62到達研磨液供給路徑60。該研磨液供給路徑60的直徑例如為20mm~30mm。
As shown in FIG. 2(A) , screw holes 58 are formed in the
如圖2(A)以及圖2(C)所示,在該研磨液供給路徑上配設栓狀構件64,以阻塞住該研磨液供給路徑。在該栓狀構件64上形成有多個孔66,在該厚度方向上貫穿該栓狀構件64。例如,該孔66的直徑約是4mm,並且在該栓狀構件64上形成4處。該栓狀構件64是例如透過利用鑽孔機等在圓板狀的氯乙烯等的樹脂上形成孔66而被製作出來。
As shown in FIGS. 2(A) and 2(C) , a plug-
該研磨層56是例如包含磨粒的不織布。在使用固定磨粒墊(其用了於該研磨層56包含該磨粒的不織布)的情況下,於研磨工件1時,使用不包含磨粒的研磨液。該研磨液是例如在溶解氫氧化鈉或氫氧化鉀等的鹼性溶液添加甘油或乙二醇等的水溶性有機物質而得到的鹼性溶液。或者,也可以使用純水。
The
然後,不含磨粒的不織布也可以使用於該研磨層56。在這種情況下,例如使用使固體粒子分散在分散介質中的漿於該研磨液中。該漿的分散介質的類型、固定粒子的類型,該固體粒子的形狀以及大小等根據預定研磨的內容或工件1的類型來選擇。
Then, a non-woven fabric that does not contain abrasive grains can also be used for the
進一步,也可以使該研磨層56包含:固相反應微粒子,誘發與工件1的固相反應;去疵用微粒子,莫氏硬度比工件1高,並且可以在被加工面上
形成去疵層。當形成該去疵層,則可以抑制雜質元素侵入在工件上形成的元件。具有該研磨層56的該研磨墊44是透過使該固相反應微粒子與該去疵用微粒子分散在液狀的結合材上,並且使該液狀的結合材浸漬在不織布中,使該不織布乾燥而形成。
Furthermore, the
接著,針對安裝在該研磨墊44的研磨裝置2中的工件1的研磨進行說明。圖3是示意性地表示使用研磨墊44的研磨步驟的剖面圖。如圖3所示,該研磨墊44是被安裝在配設於主軸40的下端的安裝件42上而使用。
Next, the grinding|polishing of the workpiece|
當該研磨墊44安裝在該安裝件42上,則形成在研磨單元26的內部的研磨液供給路徑50與形成在該研磨墊44的中央部的研磨液供給路徑60連接。
When the
首先,使保持台20的吸引源作動,並且使工件1吸引保持在保持面20a之上。然後,使該保持台20在加工區域24中移動,在該工件1的上方配設研磨單元26,以覆蓋該工件1的被研磨面。然後,以繞著沿著Z軸方向的各個的軸之方式使該保持台20和研磨墊44旋轉,並且使該研磨墊44下降。接著,當該研磨墊44接觸到工件1,則開始工件1的研磨。
First, the suction source of the holding table 20 is actuated, and the
在研磨工件1時,使研磨裝置2的研磨液供給源48作動,並且對該研磨液供給路徑50供給該研磨液。供給至該研磨液供給路徑50的研磨液透過該栓狀構件64暫時留在該栓狀構件64的上方,然後從孔66向下方流出。從該孔66向下方流出的該研磨液由於是經由研磨墊44的研磨液供給路徑60的內壁面而流向下方,因此亦供給到達該研磨液供給路徑60的槽62。
When polishing the
因此,即使該研磨墊44的該研磨液供給路徑60不被工件1阻塞住,該研磨液也會供給至該槽62。到達該槽62的研磨液,由於經由該槽62供給至該工件1的被加工面的整個區域,因此該工件1被適當地研磨。
Therefore, even if the polishing
栓狀構件64未配設在研磨墊44的情況下,該研磨液不一定經由該研磨液供給路徑60的內壁面。因此,為了使該研磨液確實地到達該槽62,必須對該研磨液供給源供給大量的研磨液。對此,由於在本實施例的研磨墊44中配設有該栓狀構件64,可以使該研磨液傳遞至研磨液供給路徑60的內壁面,因此不需要供給大量的研磨液。
When the plug-
如上所述,根據本實施例的研磨墊44,可以在該研磨墊44與工件1之間適當地供給研磨液。
As described above, according to the
另外,本發明不限於上述實施例的描述,並且可以進行各種修改而實施。例如,在上述實施例中,雖然說明了關於配設有該栓狀構件64的研磨墊44,但是本發明的一態樣並不限於此。例如,裝入至具有研磨液供給路徑60的研磨墊44的該研磨液供給路徑60中的栓狀構件64也是本發明的一個態樣。
In addition, the present invention is not limited to the description of the above-described embodiments, and can be implemented with various modifications. For example, in the above-described embodiment, the
此外,栓狀構件64也可以不配設在該研磨液供給路徑60,例如,也可以是具有與該研磨墊相似的徑的圓板狀構件。在該圓板狀構件的中央附近設有在厚度方向上貫穿該圓板狀構件的孔。接著,在將該研磨墊44固定在主軸40的下端的安裝件42上時,若該圓板狀構件被夾在研磨墊44與該安裝件42之間,則該研磨液供給路徑60被該圓板狀構件阻塞住,使研磨液變成通過該孔向下方流出。
In addition, the plug-shaped
另外,在不脫離本發明的目的的範圍的情況下,可以適當地變更而實施和上述實施例相關的結構、方法等。 In addition, the structures, methods, and the like related to the above-described embodiments can be implemented with appropriate modifications without departing from the scope of the object of the present invention.
1:工件 1: Workpiece
3:保護膠帶 3: Protective tape
20:保持台 20: Hold Desk
20a:保持面 20a: Keep Faces
20b:吸引路徑 20b: Path of Attraction
40:主軸 40: Spindle
42:安裝件 42: Mounting pieces
46:固定具 46: Fixtures
50:研磨液供給路徑 50: Grinding liquid supply path
54:基材層 54: substrate layer
56:研磨層 56: abrasive layer
60:研削液供給路徑 60: Grinding fluid supply path
62:槽 62: Groove
64:栓狀構件 64: Bolt-like member
66:孔 66: Hole
68:研磨液 68: Grinding fluid
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JP2002187062A (en) * | 2000-12-22 | 2002-07-02 | Toshiba Mach Co Ltd | Device, method and grinding wheel for surface grinding |
TW201102222A (en) * | 2009-07-03 | 2011-01-16 | Kinik Co | Grinding tool with dynamical balance and debris exhaust |
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TW201714709A (en) * | 2015-10-22 | 2017-05-01 | Kinik Co | Grinding disc having internal fluid supply structure to effectively slow down the deformation of the grinding surface to reduce the number of dressing |
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JPS63232980A (en) * | 1987-03-19 | 1988-09-28 | Genichi Sato | Grinding wheel |
JPH0899265A (en) | 1994-09-30 | 1996-04-16 | Disco Abrasive Syst Ltd | Polishing device |
JPH1034528A (en) * | 1996-05-22 | 1998-02-10 | Sony Corp | Polishing device and polishing method |
JP2868011B1 (en) * | 1998-02-20 | 1999-03-10 | 日本電気株式会社 | Method and apparatus for polishing plastic members |
JP4154067B2 (en) | 1999-04-06 | 2008-09-24 | 株式会社ディスコ | Grinding equipment |
JP5516051B2 (en) * | 2010-05-13 | 2014-06-11 | 旭硝子株式会社 | Polishing apparatus using polishing pad and glass plate manufacturing method |
JP2016092247A (en) * | 2014-11-06 | 2016-05-23 | 株式会社ディスコ | Method for polishing silicon carbide substrate |
CN105234823B (en) * | 2015-10-27 | 2017-09-29 | 上海华力微电子有限公司 | Lapping liquid is supplied and grinding pad collating unit, grinder station |
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JP2002187062A (en) * | 2000-12-22 | 2002-07-02 | Toshiba Mach Co Ltd | Device, method and grinding wheel for surface grinding |
TW201102222A (en) * | 2009-07-03 | 2011-01-16 | Kinik Co | Grinding tool with dynamical balance and debris exhaust |
TW201507811A (en) * | 2013-07-08 | 2015-03-01 | Sumco Techxiv Corp | Scattering plate, grinding wheel, and grinding device |
TW201714709A (en) * | 2015-10-22 | 2017-05-01 | Kinik Co | Grinding disc having internal fluid supply structure to effectively slow down the deformation of the grinding surface to reduce the number of dressing |
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