JP2020123666A - Processing method of workpiece - Google Patents

Processing method of workpiece Download PDF

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JP2020123666A
JP2020123666A JP2019014646A JP2019014646A JP2020123666A JP 2020123666 A JP2020123666 A JP 2020123666A JP 2019014646 A JP2019014646 A JP 2019014646A JP 2019014646 A JP2019014646 A JP 2019014646A JP 2020123666 A JP2020123666 A JP 2020123666A
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workpiece
outer peripheral
region
protective member
liquid resin
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哲一 杉谷
Tetsukazu Sugitani
哲一 杉谷
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Disco Corp
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Disco Abrasive Systems Ltd
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Abstract

To provide a processing method of a workpiece capable of being corresponded to a semiconductor wafer of which a shape of a device region is different, and having a high general purpose.SOLUTION: A processing method is for a workpiece, comprises: a device region where a device comprising an electrode bump in a plurality of regions segmented by a plurality of crossed-division scheduled lines is formed, respectively; and an outer peripheral surplus region which is provided so as to surround the device region and where the electrode bump is not formed on a front face side. The processing method includes: a step of forming a step resolving member, in which a difference from a height position of an end part of a height direction of the electrode bump is within an acceptable range in the outer surplus region; a step of adhering a protective member, in which the protective member is adhered onto the front face side of the workpiece so as to cover the front face side of the workpiece; and a grinding step of holding the protective member side with a chuck table and grinding a back face side of the workpiece.SELECTED DRAWING: Figure 2

Description

本発明は、電極バンプを備える被加工物の加工方法に関する。 The present invention relates to a method of processing a work piece having an electrode bump.

従来より、半導体デバイスチップの表面側に形成された電極パッドに金属製のワイヤが接続される様に構成された、ワイヤ・ボンディング方式の半導体デバイスチップが知られている。これに対して、近年では、電極バンプが半導体デバイスチップの表面側に形成されたフリップチップ方式の半導体デバイスチップも実用化されている。 Conventionally, a wire bonding type semiconductor device chip is known in which a metal wire is connected to an electrode pad formed on the front surface side of the semiconductor device chip. On the other hand, in recent years, a flip-chip type semiconductor device chip in which electrode bumps are formed on the front surface side of the semiconductor device chip has also been put into practical use.

フリップチップ方式の半導体デバイスチップを製造する場合は、通常は、電極バンプ形成後に、研削装置を用いて半導体ウェーハの裏面側を研削する。但し、研削時には、半導体ウェーハの表面側の段差(即ち、電極バンプが形成されたデバイス領域と、デバイス領域を囲む様に設けられ且つ電極バンプが形成されていない外周余剰領域との高さの差)に起因して、半導体ウェーハに割れが生じやすいという問題がある。 When manufacturing a flip-chip type semiconductor device chip, usually, after forming electrode bumps, the back side of the semiconductor wafer is ground using a grinding machine. However, at the time of grinding, the height difference between the step on the front surface side of the semiconductor wafer (that is, the height of the device region in which the electrode bumps are formed and the outer peripheral region provided so as to surround the device region and in which the electrode bumps are not formed) ), there is a problem that the semiconductor wafer is likely to be cracked.

この段差を解消するべく、電極バンプをめり込ませることができる柔らかい保護テープを、半導体ウェーハの表面側に設けた上で、裏面側を研削する場合があった。但し、電極バンプには、例えば、高さが50μm程度の比較的低いタイプの他にも、高さが300μmを超えるいわゆるハイバンプタイプ等がある。ハイバンプタイプの電極バンプが用いられる場合、電極バンプを保護テープに完全にめり込ませることは難しく、保護テープを使用しても必ずしも段差を解消できない。 In order to eliminate this step, there is a case where a soft protective tape into which the electrode bump can be inserted is provided on the front surface side of the semiconductor wafer and then the back surface side is ground. However, the electrode bumps include, for example, a relatively low type having a height of about 50 μm and a so-called high bump type having a height of more than 300 μm. When a high bump type electrode bump is used, it is difficult to completely insert the electrode bump into the protective tape, and even if the protective tape is used, the step cannot be eliminated.

そこで、表面側の段差を解消するべく、デバイス領域に対応する領域に粘着層が無く、外周余剰領域に対応する領域に粘着層(即ち、段差解消部材)を有する比較的厚い保護テープが開発された(特許文献1参照)。 Therefore, in order to eliminate the step on the front surface side, a relatively thick protective tape having no adhesive layer in the area corresponding to the device area and having an adhesive layer (that is, a step eliminating member) in the area corresponding to the outer peripheral excess area has been developed. (See Patent Document 1).

特開2009−188010号公報JP, 2009-188010, A

しかしながら、デバイス領域の形状に応じて外周余剰領域の形状も異なるので、デバイス領域に対応する領域に粘着層が無い保護テープを、デバイス領域の形状が異なる半導体ウェーハには適用できなかった。 However, since the shape of the outer peripheral surplus area is different depending on the shape of the device area, the protective tape having no adhesive layer in the area corresponding to the device area cannot be applied to the semiconductor wafer having the different shape of the device area.

本発明は係る問題点に鑑みてなされたものであり、デバイス領域の形状が異なる半導体ウェーハにも対応できる汎用性の高い被加工物の加工方法を提供することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a highly versatile method for processing a workpiece which can be applied to semiconductor wafers having different device regions.

本発明の一態様によれば、互いに交差する複数の分割予定ラインによって区画された複数の領域に電極バンプを備えるデバイスがそれぞれ形成されたデバイス領域と、該デバイス領域を囲む様に設けられ且つ該電極バンプが形成されていない外周余剰領域とを表面側に備える被加工物の加工方法であって、該電極バンプの高さ方向の端部の高さ位置との差が許容範囲内である段差解消部材を、該外周余剰領域の形状に応じて、該外周余剰領域に形成する段差解消部材形成ステップと、該段差解消部材形成ステップ後、該被加工物の該表面側を覆う様に該被加工物の該表面側に保護部材を貼り付ける保護部材貼り付けステップと、該保護部材貼り付けステップ後、該保護部材側をチャックテーブルで保持し、該表面とは反対側に位置する該被加工物の裏面側を研削する研削ステップと、を備える被加工物の加工方法が提供される。 According to one aspect of the present invention, a device region in which a device including an electrode bump is formed in each of a plurality of regions defined by a plurality of planned dividing lines that intersect with each other, and the device region is provided so as to surround the device region, and A method for processing a work piece, the outer peripheral area of which electrode bumps are not formed and a front surface side, wherein a difference from a height position of an end portion in the height direction of the electrode bump is within an allowable range. A step for eliminating a step of forming a canceling member in the outer peripheral excess area in accordance with the shape of the outer peripheral excessive area, and after the step for eliminating the step differentiating step, the workpiece is covered so as to cover the front surface side of the workpiece. Protective member attaching step of attaching a protective member to the surface side of the workpiece, and after the protective member attaching step, the protective member side is held by a chuck table, and the workpiece to be processed is located on the opposite side of the surface. A method of processing a work piece is provided, which comprises a grinding step of grinding the back side of the work piece.

好ましくは、該段差解消部材形成ステップでは、ジェットディスペンサを用いて液状樹脂を該外周余剰領域に塗布する。 Preferably, in the step eliminating member forming step, a liquid resin is applied to the outer peripheral excess area using a jet dispenser.

また、好ましくは、該段差解消部材形成ステップでは、硬化型液状樹脂を該外周余剰領域に塗布した後、該硬化型液状樹脂を硬化させて該外周余剰領域に該段差解消部材を形成する。 Further, preferably, in the step of eliminating the step, the curable liquid resin is applied to the outer peripheral surplus region, and then the curable liquid resin is cured to form the step eliminating member in the outer peripheral surplus region.

本発明の一態様に係る被加工物の加工方法の段差解消部材形成ステップでは、電極バンプの高さ方向の端部の高さ位置との差が許容範囲内である段差解消部材を、外周余剰領域の形状に応じて、外周余剰領域に形成する。それゆえ、あらゆる形状の外周余剰領域に応じて適切な段差解消部材を形成できる。 In the step eliminating member forming step of the method for processing a workpiece according to an aspect of the present invention, the step eliminating member having a difference from the height position of the end portion in the height direction of the electrode bump is within an allowable range is used as an outer peripheral surplus. It is formed in the outer peripheral surplus region according to the shape of the region. Therefore, an appropriate step eliminating member can be formed according to the outer peripheral surplus region of any shape.

被加工物の斜視図である。It is a perspective view of a work piece. 図2(A)は、樹脂塗布工程を示す一部断面側面図であり、図2(B)は、樹脂硬化工程後の被加工物の斜視図である。FIG. 2(A) is a partial cross-sectional side view showing the resin coating step, and FIG. 2(B) is a perspective view of the workpiece after the resin curing step. 図3(A)は、樹脂層の高さ方向の端部の高さ位置が電極バンプの高さ方向の端部の高さ位置よりも高い場合を示す図であり、図3(B)は、樹脂層の高さ方向の端部の高さ位置が電極バンプの高さ方向の端部の高さ位置よりも低い場合を示す図である。FIG. 3A is a diagram showing a case where the height position of the end portion in the height direction of the resin layer is higher than the height position of the end portion in the height direction of the electrode bump, and FIG. FIG. 6 is a diagram showing a case where the height position of the end portion of the resin layer in the height direction is lower than the height position of the end portion of the electrode bump in the height direction. 図4(A)は、保護部材押圧工程を示す一部断面側面図であり、図4(B)は、保護部材切断工程後の被加工物等の断面図である。FIG. 4(A) is a partial cross-sectional side view showing the protective member pressing step, and FIG. 4(B) is a sectional view of the workpiece or the like after the protective member cutting step. 研削ステップを示す一部断面側面図である。It is a partial cross-sectional side view which shows a grinding step. 被加工物の加工方法を示すフロー図である。It is a flowchart which shows the processing method of a to-be-processed object.

添付図面を参照して、本発明の一態様に係る実施形態について説明する。図1は、被加工物11の斜視図である。本実施形態の被加工物11は、主としてシリコン(Si)から成り、厚さが500μmから1000μm程度の円盤状に形成されているウェーハを有する。 An embodiment according to an aspect of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a perspective view of the workpiece 11. The workpiece 11 of this embodiment has a wafer which is mainly made of silicon (Si) and has a disk shape with a thickness of about 500 μm to 1000 μm.

なお、半導体基板の材質、形状、構造、大きさ等に制限はない。例えば、ウェーハは、ガリウムヒ素(GaAs)、炭化ケイ素(SiC)などから成るシリコン以外の半導体材料等で形成されてもよい。 The material, shape, structure and size of the semiconductor substrate are not limited. For example, the wafer may be formed of a semiconductor material other than silicon such as gallium arsenide (GaAs) or silicon carbide (SiC).

被加工物11は、ウェーハに接する様に形成され、ウェーハよりも薄い厚さを有する配線層(不図示)を更に有する。本実施形態では、ウェーハに接する面とは反対側に位置する配線層の一面を被加工物11の表面11aと称し、表面11aとは反対側に位置する被加工物11の他面を被加工物11の裏面11bと称する。 The workpiece 11 further includes a wiring layer (not shown) formed so as to be in contact with the wafer and having a thickness smaller than that of the wafer. In this embodiment, one surface of the wiring layer located on the side opposite to the surface in contact with the wafer is referred to as the surface 11a of the workpiece 11, and the other surface of the workpiece 11 located on the side opposite to the surface 11a is processed. It is referred to as the back surface 11b of the object 11.

配線層は、積層された複数の電極層(不図示)を有し、この複数の電極層は、ウェーハの表面11a側に位置する活性領域と電気的に接続する様に形成されている。配線層は、層間絶縁層として機能する低誘電率絶縁体層(いわゆる、Low−k材料層)(不図示)を更に有し、この低誘電率絶縁体層は、電極層間に配置されている。配線層と、ウェーハの活性領域とにより、IC(Integrated Circuit)、LSI(Large Scale Integration)等のデバイス17aが構成されている。 The wiring layer has a plurality of laminated electrode layers (not shown), and the plurality of electrode layers are formed so as to be electrically connected to the active region located on the front surface 11a side of the wafer. The wiring layer further has a low dielectric constant insulating layer (so-called Low-k material layer) (not shown) that functions as an interlayer insulating layer, and the low dielectric constant insulating layer is arranged between the electrode layers. .. The wiring layer and the active region of the wafer form a device 17a such as an IC (Integrated Circuit) or an LSI (Large Scale Integration).

被加工物11の表面11a側には、複数のデバイス17aを含むデバイス領域15aが形成されている。デバイス領域15aは、互いに交差する様に(例えば、格子状に)配置された複数の分割予定ライン(ストリート)13により、複数の領域に区画されており、複数の分割予定ライン13によって区画された各領域にデバイス17aが形成されている。 A device region 15a including a plurality of devices 17a is formed on the surface 11a side of the workpiece 11. The device region 15a is partitioned into a plurality of regions by a plurality of planned dividing lines (streets) 13 arranged so as to intersect with each other (for example, in a grid pattern), and is partitioned by the plurality of planned dividing lines 13. The device 17a is formed in each region.

デバイス17aの表面11a側には、半田等の金属材料で略球状に形成された複数の電極バンプ17bが設けられている。複数の電極バンプ17bの各々は、例えば、300μm程度の高さを有する、いわゆるハイバンプタイプの電極バンプである。 On the surface 11a side of the device 17a, a plurality of electrode bumps 17b formed of a metal material such as solder and having a substantially spherical shape are provided. Each of the plurality of electrode bumps 17b is, for example, a so-called high bump type electrode bump having a height of about 300 μm.

複数の電極バンプ17bの各々は、最も上側に位置し且つ低誘電率絶縁体層から露出している上述の電極層に接しており、複数の電極層を介して上述の活性領域に電気的に接続している。なお、電極バンプ17bの種類、数量、形状、構造、大きさ、配置等に制限はない。 Each of the plurality of electrode bumps 17b is in contact with the above-mentioned electrode layer located on the uppermost side and exposed from the low dielectric constant insulator layer, and electrically connected to the above-mentioned active region through the plurality of electrode layers. Connected. There is no limitation on the type, quantity, shape, structure, size, arrangement, etc. of the electrode bumps 17b.

デバイス領域15aの外縁よりも外側には、デバイス領域15aを囲む略環状の領域である外周余剰領域15bが存在している。この外周余剰領域15bには、電極バンプ17bが形成されていないので、デバイス領域15aの表面11a側の高さと外周余剰領域15bの表面11a側の高さとには、高さの差(即ち、段差)が形成されている。 An outer peripheral surplus region 15b, which is a substantially annular region surrounding the device region 15a, exists outside the outer edge of the device region 15a. Since the electrode bumps 17b are not formed in the outer peripheral surplus region 15b, the height difference (that is, the step difference) between the height of the device region 15a on the surface 11a side and the height of the outer peripheral surplus region 15b on the surface 11a side. ) Has been formed.

外周余剰領域15bの外周端部の一部には、半導体基板の結晶方位を示すノッチ11cが設けられている。なお、ノッチ11cに代えて、オリエンテーションフラット等の他のマークが設けられてもよい。 A notch 11c indicating the crystal orientation of the semiconductor substrate is provided in a part of the outer peripheral end of the outer peripheral surplus region 15b. Instead of the notch 11c, another mark such as an orientation flat may be provided.

次に、図2から図6を用いて、被加工物11の加工方法について説明する。図2(A)は、樹脂塗布工程(S10)を示す一部断面側面図である。なお、図6は、被加工物11の加工方法を示すフロー図である。 Next, a method of processing the workpiece 11 will be described with reference to FIGS. 2 to 6. FIG. 2A is a partial cross-sectional side view showing the resin coating step (S10). Note that FIG. 6 is a flow chart showing the processing method of the workpiece 11.

樹脂塗布工程(S10)では、樹脂層形成装置18を用いて被加工物11の外周余剰領域15bに液状樹脂22aを塗布する。樹脂層形成装置18は、被加工物11の裏面11b側を吸引して保持する吸着テーブル20を備える。吸着テーブル20の上部には、複数の吸引孔(不図示)が設けられている。 In the resin applying step (S10), the liquid resin 22a is applied to the outer peripheral surplus region 15b of the workpiece 11 by using the resin layer forming device 18. The resin layer forming apparatus 18 includes a suction table 20 that sucks and holds the back surface 11b side of the workpiece 11. A plurality of suction holes (not shown) are provided on the suction table 20.

各吸引孔の一端は、エジェクタ等の吸引源(不図示)に接続されており、各吸引孔の他端は、吸着テーブル20の表面に露出している。吸引源を動作させると、吸着テーブル20の表面には負圧が生じ、この表面は被加工物11を吸引して保持する保持面20aとして機能する。 One end of each suction hole is connected to a suction source (not shown) such as an ejector, and the other end of each suction hole is exposed on the surface of the suction table 20. When the suction source is operated, a negative pressure is generated on the surface of the suction table 20, and this surface functions as a holding surface 20a that sucks and holds the workpiece 11.

吸着テーブル20の下方には、ボールねじ式のX軸移動機構(不図示)が設けられており、吸着テーブル20は、X軸移動機構によりX軸方向に沿って移動させられる。吸着テーブル20の上方には、液状樹脂22aを吐出可能なジェットディスペンサ24が設けられている。 A ball screw type X-axis moving mechanism (not shown) is provided below the suction table 20, and the suction table 20 is moved along the X-axis direction by the X-axis moving mechanism. A jet dispenser 24 capable of ejecting the liquid resin 22a is provided above the suction table 20.

ジェットディスペンサ24には、ボールねじ式のY軸移動機構(不図示)が設けられており、ジェットディスペンサ24は、Y軸移動機構によりY軸方向に沿って移動させられる。ジェットディスペンサ24は、液状樹脂22aを吐出するノズル24aを有し、このノズル24aの吐出口は、吸着テーブル20に対向する様に配置されている。 The jet dispenser 24 is provided with a ball screw type Y-axis moving mechanism (not shown), and the jet dispenser 24 is moved along the Y-axis direction by the Y-axis moving mechanism. The jet dispenser 24 has a nozzle 24 a for ejecting the liquid resin 22 a, and the ejection port of the nozzle 24 a is arranged so as to face the suction table 20.

本実施形態のジェットディスペンサ24は、ピエゾ素子を利用してバルブを高速で開閉するピエゾジェットディスペンサである。なお、ジェットディスペンサ24は、バネの復元力等を利用して機械的にロッドを往復運動させることで、液状樹脂22aを吐出する機械式ジェットディスペンサであってもよい。 The jet dispenser 24 of this embodiment is a piezo jet dispenser that uses a piezo element to open and close a valve at high speed. The jet dispenser 24 may be a mechanical jet dispenser that discharges the liquid resin 22a by mechanically reciprocating the rod by utilizing the restoring force of a spring or the like.

本実施形態では、液状樹脂22aとして、UV(即ち、紫外線)硬化型液状樹脂が用いられる。但し、液状樹脂22aは、UV以外の波長帯域の光で硬化する光硬化型液状樹脂、熱により硬化する熱硬化型液状樹脂、又は、常温環境で硬化する自然硬化型液状樹脂であってもよい。 In the present embodiment, a UV (that is, ultraviolet) curable liquid resin is used as the liquid resin 22a. However, the liquid resin 22a may be a photo-curable liquid resin that is cured by light in a wavelength band other than UV, a thermosetting liquid resin that is cured by heat, or a naturally curable liquid resin that is cured in a normal temperature environment. ..

樹脂塗布工程(S10)では、まず、被加工物11の裏面11b側が保持面20aに接する様に、被加工物11を吸着テーブル20上に載置する。そして、吸引源を動作させて、被加工物11の裏面11b側を保持面20aで吸引して保持する。 In the resin coating step (S10), first, the workpiece 11 is placed on the suction table 20 so that the back surface 11b side of the workpiece 11 contacts the holding surface 20a. Then, the suction source is operated to suck and hold the back surface 11b side of the workpiece 11 by the holding surface 20a.

その後、X軸移動機構及びY軸移動機構を用いて、ノズル24aと吸着テーブル20とを相対的に移動させながら、ノズル24aから被加工物11の表面11a側に液状樹脂22aを吐出させる。 After that, the liquid resin 22a is discharged from the nozzle 24a to the surface 11a side of the workpiece 11 while moving the nozzle 24a and the suction table 20 relatively using the X-axis moving mechanism and the Y-axis moving mechanism.

例えば、デバイス領域15a側(即ち、内側)の外周余剰領域15bの縁に沿って液状樹脂22aを吐出させ、次いで、吐出された液状樹脂22aの吐出領域の外側の縁に沿って液状樹脂22aを吐出させる。 For example, the liquid resin 22a is discharged along the edge of the outer peripheral surplus region 15b on the device region 15a side (that is, the inner side), and then the liquid resin 22a is discharged along the outer edge of the discharged region of the discharged liquid resin 22a. Discharge.

液状樹脂22aは所定の粘性を有しており、単位時間当たりの吐出量を調整することで、吐出された液状樹脂22aの表面11aからの高さは調整可能である。例えば、液状樹脂22aの吐出量は、電極バンプ17bの高さ方向(例えば、裏面11bから表面11aに向かう方向)の端部の位置との高さ位置の差が許容範囲内となる様に調整される。 The liquid resin 22a has a predetermined viscosity, and the height of the discharged liquid resin 22a from the surface 11a can be adjusted by adjusting the discharge amount per unit time. For example, the discharge amount of the liquid resin 22a is adjusted such that the difference between the height position and the position of the end of the electrode bump 17b in the height direction (for example, the direction from the back surface 11b to the front surface 11a) is within the allowable range. To be done.

外周余剰領域15b全体には、液状樹脂22aが塗布されるが、本実施形態では、ノッチ11cにも液状樹脂22aを吐出する。これにより、ノッチ11cは、液状樹脂22aで埋められる。 The liquid resin 22a is applied to the entire outer peripheral surplus region 15b, but in the present embodiment, the liquid resin 22a is also discharged to the notches 11c. As a result, the notch 11c is filled with the liquid resin 22a.

この様に、本実施形態では、ジェットディスペンサ24を用いて、外周余剰領域15bの形状に対応する様に、液状樹脂22aを塗布する。それゆえ、液状樹脂22aの塗布領域を任意の形状に調節できる。 Thus, in the present embodiment, the liquid resin 22a is applied using the jet dispenser 24 so as to correspond to the shape of the outer peripheral surplus region 15b. Therefore, the application area of the liquid resin 22a can be adjusted to an arbitrary shape.

なお、樹脂層形成装置18では、ノズル24aと吸着テーブル20とが相対的に移動できればよく、吸着テーブル20及びノズル24aのどちらか一方のみがX軸及びY軸方向に移動可能な様に樹脂層形成装置18を構成してもよい。 In the resin layer forming apparatus 18, it is sufficient that the nozzle 24a and the suction table 20 can move relative to each other, and only one of the suction table 20 and the nozzle 24a can move in the X-axis and Y-axis directions. The forming device 18 may be configured.

樹脂塗布工程(S10)後に、樹脂硬化工程(S20)を行い、液状樹脂22aを硬化させる。本実施形態の液状樹脂22aはUV硬化型液状樹脂であるので、樹脂硬化工程(S20)では、UV照射装置(不図示)が用いられる。UV照射装置は、例えば、吸着テーブル20の保持面20aに向けてUVを照射する様に、吸着テーブル20上に配置されている。 After the resin application step (S10), the resin curing step (S20) is performed to cure the liquid resin 22a. Since the liquid resin 22a of the present embodiment is a UV curable liquid resin, a UV irradiation device (not shown) is used in the resin curing step (S20). The UV irradiation device is arranged on the suction table 20, for example, so as to irradiate the holding surface 20 a of the suction table 20 with UV.

UV照射装置は、例えば、Y軸方向に沿って直列的に配列された複数のUV光源(不図示)を有し、被加工物11の直径と略同等の直線領域にUVを照射する。なお、液状樹脂22aが熱硬化型液状樹脂である場合、UV照射装置に代えて、吸着テーブル20の下に加熱装置(不図示)が設けられてもよい。 The UV irradiator has, for example, a plurality of UV light sources (not shown) arranged in series along the Y-axis direction, and irradiates UV onto a linear region substantially equivalent to the diameter of the workpiece 11. When the liquid resin 22a is a thermosetting liquid resin, a heating device (not shown) may be provided below the adsorption table 20 instead of the UV irradiation device.

樹脂硬化工程(S20)では、UV照射装置から吸着テーブル20へUVを照射させながら、X軸移動機構を用いて吸着テーブル20をX軸方向に沿って移動させる。X軸方向に沿って被加工物11の一端から他端までUVを照射することで、外周余剰領域15b全体にUVを照射する。なお、UV照射装置にX軸移動機構を設け、UV照射装置をX軸方向に移動させてもよい。 In the resin curing step (S20), the suction table 20 is moved along the X-axis direction by using the X-axis moving mechanism while irradiating the suction table 20 with UV from the UV irradiation device. By irradiating UV from one end to the other end of the workpiece 11 along the X-axis direction, the entire outer peripheral surplus region 15b is irradiated with UV. The UV irradiation device may be provided with an X-axis moving mechanism to move the UV irradiation device in the X-axis direction.

UV照射により、外周余剰領域15bの全体に塗布された液状樹脂22aは、硬化して樹脂層22bとなる。液状樹脂22aがUV硬化型液状樹脂である場合、液状樹脂22aに数秒間UVを照射するだけで液状樹脂22aを硬化させることができるので、自然硬化型液状樹脂等を硬化させる場合に比べて、樹脂硬化工程(S20)に要する作業時間を短縮できる。 The liquid resin 22a applied to the entire outer peripheral surplus region 15b by UV irradiation is cured to form a resin layer 22b. When the liquid resin 22a is a UV curable liquid resin, the liquid resin 22a can be cured only by irradiating the liquid resin 22a with UV for several seconds, and therefore, as compared with the case of curing a naturally curable liquid resin or the like, The working time required for the resin curing step (S20) can be shortened.

図2(B)は、樹脂硬化工程(S20)後の被加工物11の斜視図である。なお、本実施形態では、樹脂塗布工程(S10)及び樹脂硬化工程(S20)を合わせて、段差解消部材形成ステップと称する。硬化した樹脂層22bは、外周余剰領域15bに形成された段差解消部材の一例である。 FIG. 2B is a perspective view of the workpiece 11 after the resin curing step (S20). In the present embodiment, the resin applying step (S10) and the resin curing step (S20) are collectively referred to as a step eliminating member forming step. The cured resin layer 22b is an example of a step eliminating member formed in the outer peripheral surplus region 15b.

本実施形態の段差解消部材形成ステップでは、外周余剰領域15bの形状に応じて、電極バンプ17bとの高さの差が許容範囲内である樹脂層22b(即ち、段差解消部材)を外周余剰領域15bに形成できる。それゆえ、任意の形状の外周余剰領域15bに応じて段差解消部材を形成できる。 In the step eliminating member forming step of the present embodiment, the resin layer 22b (that is, the step eliminating member) whose height difference from the electrode bumps 17b is within the allowable range is formed in the outer peripheral excess area according to the shape of the outer peripheral extra area 15b. 15b can be formed. Therefore, the step difference eliminating member can be formed according to the outer peripheral surplus region 15b having an arbitrary shape.

ところで、後述する研削ステップ(S50)では、電極バンプ17b及び樹脂層22bが設けられた被加工物11の表面11a側を下方に向け、裏面11b側を上方に向けて、裏面11b側が研削される。 By the way, in a grinding step (S50) described later, the back surface 11b side is ground with the front surface 11a side of the workpiece 11 provided with the electrode bumps 17b and the resin layer 22b facing downward and the back surface 11b side facing upward. ..

但し、樹脂層22bの高さが電極バンプ17bの高さよりも高すぎる場合、デバイス領域15aが外周余剰領域15bに比べて窪んだ状態で裏面11b側が研削される。それゆえ、被加工物11を均一な厚さに薄化することが難しい。 However, when the height of the resin layer 22b is too higher than the height of the electrode bump 17b, the back surface 11b side is ground in a state where the device region 15a is recessed as compared with the outer peripheral surplus region 15b. Therefore, it is difficult to thin the workpiece 11 to a uniform thickness.

また、樹脂層22bの高さが電極バンプ17bの高さよりも低すぎる場合、デバイス領域15aが外周余剰領域15bに比べて突出した状態で裏面11b側が研削されるので、被加工物11を均一な厚さに薄化することが難しい。 Further, when the height of the resin layer 22b is too lower than the height of the electrode bump 17b, the back surface 11b side is ground in a state in which the device region 15a projects as compared with the outer peripheral surplus region 15b, so that the workpiece 11 is made uniform. It is difficult to reduce the thickness.

加えて、デバイス領域15aが外周余剰領域15bに比べて窪んだ状態又は突出した状態で裏面11b側が研削されると、被加工物11の割れが生じやすくなるという問題がある。また、この様な状態で裏面11b側が研削されると、表面11a側にシート状の保護部材25が貼られている場合に、この保護部材25が剥がれやすくなるという問題がある。 In addition, if the back surface 11b side is ground in a state where the device region 15a is recessed or protruded as compared with the outer peripheral surplus region 15b, there is a problem that the workpiece 11 is likely to crack. Further, when the back surface 11b side is ground in such a state, there is a problem that the protection member 25 is easily peeled off when the sheet-shaped protection member 25 is attached to the front surface 11a side.

それゆえ、樹脂層22bの高さ方向の端部の高さ位置と電極バンプ17bの高さ方向の端部の高さ位置との差は、研削ステップ(S50)で問題が生じない程度の所定の許容範囲内とすることが望ましい。例えば、高さの差の許容範囲は、100μm以内とする。 Therefore, the difference between the height position of the end portion in the height direction of the resin layer 22b and the height position of the end portion in the height direction of the electrode bump 17b is a predetermined value that does not cause a problem in the grinding step (S50). It is desirable to be within the allowable range of. For example, the allowable range of height difference is within 100 μm.

図3(A)は、樹脂層22bの高さ方向の端部の高さ位置が、電極バンプ17bの高さ方向の端部の高さ位置よりも高い場合を示す図である。この場合、樹脂層22bの高さ方向の端部の高さ位置と電極バンプ17bの高さ方向の端部の高さ位置との高さの差L1は、許容範囲(例えば、100μm以下が好ましく、50μm以下がより好ましく、10μm以下が更に好ましい)とする。 FIG. 3A is a diagram showing a case where the height position of the end portion of the resin layer 22b in the height direction is higher than the height position of the end portion of the electrode bump 17b in the height direction. In this case, the height difference L1 between the height position of the end of the resin layer 22b in the height direction and the height position of the end of the electrode bump 17b in the height direction is within an allowable range (for example, 100 μm or less is preferable. , 50 μm or less is more preferable, and 10 μm or less is further preferable).

図3(B)は、樹脂層22bの高さ方向の端部の高さ位置が電極バンプ17bの高さ方向の端部の高さ位置よりも低い場合を示す図である。この場合、電極バンプ17bの高さ方向の端部の高さ位置と樹脂層22bの高さ方向の端部の高さ位置との高さの差L2は、許容範囲(例えば、100μm以下が好ましく、50μm以下がより好ましく、10μm以下が更に好ましい)とする。 FIG. 3B is a diagram showing a case where the height position of the end portion of the resin layer 22b in the height direction is lower than the height position of the end portion of the electrode bump 17b in the height direction. In this case, the height difference L2 between the height position of the end of the electrode bump 17b in the height direction and the height position of the end of the resin layer 22b in the height direction is within an allowable range (for example, 100 μm or less is preferable. , 50 μm or less is more preferable, and 10 μm or less is further preferable).

樹脂硬化工程(S20)後、被加工物11の表面11a側を覆う様に被加工物11の表面11a側に保護部材25を貼り付ける(保護部材押圧工程(S30))。図4(A)は、保護部材押圧工程(S30)を示す一部断面側面図である。 After the resin curing step (S20), the protective member 25 is attached to the surface 11a side of the workpiece 11 so as to cover the surface 11a side of the workpiece 11 (protective member pressing step (S30)). FIG. 4A is a partial cross-sectional side view showing the protective member pressing step (S30).

保護部材25は、樹脂製の矩形状のフィルムであり、例えば、粘着性を有する粘着層(不図示)と、粘着性を有しない基材層(不図示)との積層構造を有する。なお、保護部材25は、粘着層を有せず、基材層のみを有してもよい。 The protection member 25 is a resin-made rectangular film, and has, for example, a laminated structure of an adhesive layer having adhesive properties (not shown) and a base material layer having no adhesive property (not shown). The protective member 25 may not have the adhesive layer and may have only the base material layer.

保護部材押圧工程(S30)では、保護部材貼り付け装置26が用いられる。保護部材貼り付け装置26は、被加工物11の裏面11b側を吸引して保持するチャックテーブル28を備える。チャックテーブル28の上部には、多孔質材料で形成された円盤状のポーラス板(不図示)が設けられている。 In the protective member pressing step (S30), the protective member attaching device 26 is used. The protection member attaching device 26 includes a chuck table 28 that sucks and holds the back surface 11b side of the workpiece 11. A disc-shaped porous plate (not shown) made of a porous material is provided on the chuck table 28.

ポーラス板は、エジェクタ等の吸引源(不図示)に一端が接続された吸引路(不図示)を内部に有する。吸引路の他端は、ポーラス板の表面に露出している。吸引源を動作させると、ポーラス板の表面には負圧が生じ、この表面は被加工物11を吸引して保持する保持面28aとして機能する。 The porous plate has a suction passage (not shown) whose one end is connected to a suction source (not shown) such as an ejector. The other end of the suction path is exposed on the surface of the porous plate. When the suction source is operated, a negative pressure is generated on the surface of the porous plate, and this surface functions as a holding surface 28a that sucks and holds the workpiece 11.

チャックテーブル28よりも上方には、テープ体(不図示)が設けられている。また、テープ体の近傍には、テープ体から送り出された矩形状の保護部材25を被加工物11に対して押圧するローラー状の押圧部材28bが配置されている。押圧部材28bは、回転しながら所定の方向(例えば、X軸方向)に移動可能な態様で構成されている。 A tape body (not shown) is provided above the chuck table 28. A roller-shaped pressing member 28b that presses the rectangular protection member 25 sent out from the tape body against the workpiece 11 is arranged near the tape body. The pressing member 28b is configured to be movable in a predetermined direction (for example, the X-axis direction) while rotating.

保護部材押圧工程(S30)では、まず、被加工物11の裏面11b側が保持面28aに接する様に、被加工物11をチャックテーブル28上に載置する。そして、吸引源を動作させて、被加工物11の裏面11b側を保持面28aで吸引して保持する。 In the protective member pressing step (S30), first, the workpiece 11 is placed on the chuck table 28 so that the back surface 11b side of the workpiece 11 contacts the holding surface 28a. Then, the suction source is operated to suck and hold the back surface 11b side of the workpiece 11 by the holding surface 28a.

そして、保護部材25を押圧部材28bと被加工物11の表面11aとの間に配置し、押圧部材28bを表面11aに押圧した状態で、押圧部材28bをX軸方向に沿って回転させながら移動させる。これにより、被加工物11の表面11a側の全体を覆うように、矩形状の保護部材25が貼り付けられる。 Then, the protection member 25 is disposed between the pressing member 28b and the surface 11a of the workpiece 11, and the pressing member 28b is moved while being rotated along the X-axis direction in a state where the pressing member 28b is pressed against the surface 11a. Let As a result, the rectangular protection member 25 is attached so as to cover the entire surface 11a of the workpiece 11.

なお、保護部材25が粘着層を有しない場合には、保護部材25を加熱することにより保護部材25を軟化及び変形させつつ、押圧部材28bで保護部材25を被加工物11の表面11a側に密着させてよい。また、保護部材25に温風等を当てることで、加熱により保護部材25を軟化及び変形させつつ、風圧により保護部材25を被加工物11の表面11a側に密着させてもよい。加熱温度は、保護部材25の材料の軟化点に応じて、適宜調節してよい。 In addition, when the protective member 25 does not have an adhesive layer, the protective member 25 is softened and deformed by heating the protective member 25, and the protective member 25 is moved to the surface 11a side of the workpiece 11 by the pressing member 28b. May be closely attached. Alternatively, by applying warm air or the like to the protective member 25, the protective member 25 may be softened and deformed by heating, and the protective member 25 may be brought into close contact with the surface 11a side of the workpiece 11 by wind pressure. The heating temperature may be appropriately adjusted according to the softening point of the material of the protective member 25.

保護部材押圧工程(S30)後、被加工物11の外周縁に沿って保護部材25を切り取る(保護部材切断工程(S40))。保護部材切断工程(S40)では、上述のテープ体及び押圧部材28bの近傍に配置されたカッター(不図示)により、矩形状の保護部材25が被加工物11の外周に沿う様に円状に切り取られる。 After the protective member pressing step (S30), the protective member 25 is cut along the outer peripheral edge of the workpiece 11 (protective member cutting step (S40)). In the protective member cutting step (S40), the rectangular protective member 25 is formed into a circular shape along the outer periphery of the workpiece 11 by the cutter (not shown) arranged near the tape body and the pressing member 28b. Cut off.

図4(B)は、保護部材切断工程(S40)後の被加工物11等の断面図である。保護部材押圧工程(S30)及び保護部材切断工程(S40)を経て、保護部材25が表面11a側に貼り付けられた被加工物11が形成される。なお、本実施形態では、保護部材押圧工程(S30)及び保護部材切断工程(S40)を合わせて、保護部材貼り付けステップと称する。 FIG. 4B is a cross-sectional view of the workpiece 11 and the like after the protective member cutting step (S40). Through the protective member pressing step (S30) and the protective member cutting step (S40), the workpiece 11 having the protective member 25 attached to the front surface 11a side is formed. In this embodiment, the protective member pressing step (S30) and the protective member cutting step (S40) are collectively referred to as a protective member attaching step.

保護部材切断工程(S40)の後、被加工物11の裏面11b側が研削される(研削ステップ(S50))。図5は、研削ステップ(S50)を示す一部断面側面図である。研磨ステップ(S50)では、研削装置30が用いられる。 After the protective member cutting step (S40), the back surface 11b side of the workpiece 11 is ground (grinding step (S50)). FIG. 5 is a partial cross-sectional side view showing the grinding step (S50). In the polishing step (S50), the grinding device 30 is used.

研削装置30は、被加工物11の保護部材25側を保持するためのチャックテーブル32を備える。チャックテーブル32はモーター等の回転駆動源(不図示)と接続されており、鉛直方向に概ね平行な直線を回転軸として回転する。 The grinding device 30 includes a chuck table 32 for holding the workpiece 11 on the side of the protective member 25. The chuck table 32 is connected to a rotary drive source (not shown) such as a motor, and rotates about a straight line substantially parallel to the vertical direction as a rotation axis.

チャックテーブル32の上面側には、多孔質材料で形成された円盤状のポーラス板(不図示)が設けられている。ポーラス板は、エジェクタ等の吸引源(不図示)に一端が接続された吸引路(不図示)を内部に有する。吸引路の他端は、ポーラス板の表面に露出している。吸引源を動作させると、ポーラス板の表面には負圧が生じ、この表面は被加工物11の保護部材25側を吸引して保持する保持面32aとして機能する。 A disc-shaped porous plate (not shown) made of a porous material is provided on the upper surface side of the chuck table 32. The porous plate has a suction passage (not shown) whose one end is connected to a suction source (not shown) such as an ejector. The other end of the suction path is exposed on the surface of the porous plate. When the suction source is operated, a negative pressure is generated on the surface of the porous plate, and this surface functions as a holding surface 32a that sucks and holds the protection member 25 side of the workpiece 11.

チャックテーブル32の上方には、研削ユニット34が設けられている。研削ユニット34は、昇降機構(不図示)によって支持された円筒状のスピンドルハウジング(不図示)を備える。スピンドルハウジングにはスピンドル36が回転可能に収容されており、スピンドルハウジングから露出したスピンドル36の下端部には円盤状のホイールマウント38が固定されている。 A grinding unit 34 is provided above the chuck table 32. The grinding unit 34 includes a cylindrical spindle housing (not shown) supported by a lifting mechanism (not shown). A spindle 36 is rotatably accommodated in the spindle housing, and a disc-shaped wheel mount 38 is fixed to the lower end of the spindle 36 exposed from the spindle housing.

ホイールマウント38の下面側には、ホイールマウント38と概ね同径の研削ホイール40が装着される。研削ホイール40は、ステンレス、アルミニウム等の金属材料で形成された円環状のホイール基台40aを有する。また、ホイール基台40aの下面側には、直方体状の複数の研削砥石(砥石チップ)40bがホイール基台40aの外周に沿って円環状に配列されている。 A grinding wheel 40 having substantially the same diameter as that of the wheel mount 38 is mounted on the lower surface side of the wheel mount 38. The grinding wheel 40 has an annular wheel base 40a made of a metal material such as stainless steel or aluminum. Further, on the lower surface side of the wheel base 40a, a plurality of rectangular parallelepiped grinding wheels (grinding stone chips) 40b are arranged in an annular shape along the outer periphery of the wheel base 40a.

研削砥石40bは、例えば、金属、セラミックス、樹脂等の結合材に、ダイヤモンド、cBN(cubic boron nitride)等の砥粒を混合して形成される。ただし、結合材及び砥粒の種類に制限はなく、研削砥石40bの仕様に応じて適宜選択できる。 The grinding wheel 40b is formed, for example, by mixing a bonding material such as metal, ceramics, or resin with abrasive grains such as diamond or cBN (cubic boron nitride). However, the types of the binder and the abrasive grains are not limited, and can be appropriately selected according to the specifications of the grinding wheel 40b.

スピンドル36の上端側にはモーター等の回転駆動源(不図示)が接続されており、研削ホイール40は、この回転駆動源が発生する力によってスピンドル36を回転軸として回転する。また、研削ユニット34には、研削砥石40b及び被加工物11に純水等の研削液を供給するためのノズル(不図示)が設けられている。 A rotary drive source (not shown) such as a motor is connected to the upper end side of the spindle 36, and the grinding wheel 40 is rotated about the spindle 36 by the force generated by the rotary drive source. Further, the grinding unit 34 is provided with a nozzle (not shown) for supplying a grinding liquid such as pure water to the grinding wheel 40b and the workpiece 11.

研削ステップ(S50)では、まず、裏面11b側が上方に露出した状態となるように被加工物11をチャックテーブル32の保持面32a上に配置する。この状態で吸引源を動作させて保持面32aに負圧を作用させる。これにより、被加工物11の表面11a側は、保護部材25を介して保持面32aに吸引されて保持される。 In the grinding step (S50), first, the workpiece 11 is placed on the holding surface 32a of the chuck table 32 so that the back surface 11b side is exposed upward. In this state, the suction source is operated to apply a negative pressure to the holding surface 32a. As a result, the surface 11 a side of the workpiece 11 is sucked and held by the holding surface 32 a via the protective member 25.

次に、チャックテーブル32と研削ホイール40とを所定の方向にそれぞれ回転させて、純水等の研削液を研削砥石40b及び被加工物11の裏面11b側に供給しながらスピンドル36を降下させる。 Next, the chuck table 32 and the grinding wheel 40 are respectively rotated in predetermined directions, and the spindle 36 is lowered while supplying a grinding liquid such as pure water to the grinding wheel 40b and the back surface 11b side of the workpiece 11.

スピンドル36の降下速度は、研削砥石40bが適切な力で被加工物11の裏面11b側に押し当てられるように調節される。被加工物11は、裏面11b側が研削され、所定の厚さになるまで薄化される。 The descending speed of the spindle 36 is adjusted so that the grinding wheel 40b is pressed against the back surface 11b side of the workpiece 11 with an appropriate force. The workpiece 11 is ground on the back surface 11b side and thinned to a predetermined thickness.

本実施形態に係る被加工物11の加工方法では、電極バンプ17bとの高さの差が許容範囲内である樹脂層22b(即ち、段差解消部材)が外周余剰領域15bに設けられているので、段差解消部材が無い場合に比べて、被加工物11をより均一な厚さにできる。また、段差解消部材が無い場合に比べて、被加工物11の割れを低減でき、保護部材25の剥がれも抑制できる。 In the method of processing the workpiece 11 according to the present embodiment, the resin layer 22b (that is, the step eliminating member) having a height difference with the electrode bump 17b within the allowable range is provided in the outer peripheral surplus region 15b. As compared with the case where there is no step eliminating member, the workpiece 11 can have a more uniform thickness. In addition, cracking of the workpiece 11 can be reduced and peeling of the protective member 25 can be suppressed as compared with the case where there is no step eliminating member.

なお、本実施形態では、ノッチ11cを樹脂層22bで埋めるので、ノッチ11cを樹脂層22bで埋めない場合に比べて、研削ステップ(S50)での被加工物11の割れを低減できる。 In this embodiment, since the notch 11c is filled with the resin layer 22b, cracks of the workpiece 11 in the grinding step (S50) can be reduced as compared with the case where the notch 11c is not filled with the resin layer 22b.

その他、上記実施形態に係る構造、方法等は、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施できる。例えば、複数のデバイスチップがモールド樹脂で封止され一面に複数の電極バンプ17bが設けられた樹脂パッケージ基板が被加工物11として用いられてもよい。 In addition, the structures, methods, and the like according to the above-described embodiments can be appropriately modified and implemented without departing from the scope of the object of the invention. For example, a resin package substrate in which a plurality of device chips are sealed with a mold resin and a plurality of electrode bumps 17b are provided on one surface may be used as the workpiece 11.

また、例えば、表面11a側が封止樹脂でモールドされ、封止樹脂から電極バンプ17bが突出する様に配置されたウェーハレベルチップサイズパッケージ(WL−CSP:Wafer Level Chip Size Package)が被加工物11として用いられてもよい。 Further, for example, a wafer level chip size package (WL-CSP: Wafer Level Chip Size Package) in which the surface 11a side is molded with a sealing resin and the electrode bumps 17b are arranged to project from the sealing resin is a workpiece 11 May be used as.

11 被加工物
11a 表面
11b 裏面
11c ノッチ
13 分割予定ライン
15a デバイス領域
15b 外周余剰領域
17a デバイス
17b 電極バンプ
18 樹脂層形成装置
20 吸着テーブル
20a 保持面
22a 液状樹脂
22b 樹脂層
24 ジェットディスペンサ
24a ノズル
25 保護部材
26 保護部材貼り付け装置
28 チャックテーブル
28a 保持面
28b 押圧部材
30 研削装置
32 チャックテーブル
32a 保持面
34 研削ユニット
36 スピンドル
38 ホイールマウント
40 研削ホイール
40a ホイール基台
40b 研削砥石
L1 高さの差
L2 高さの差
11 Workpiece 11a Front surface 11b Back surface 11c Notch 13 Planned division line 15a Device area 15b Perimeter surplus area 17a Device 17b Electrode bump 18 Resin layer forming device 20 Adsorption table 20a Holding surface 22a Liquid resin 22b Resin layer 24 Jet dispenser 24a Nozzle 25 Protection Member 26 Protective member pasting device 28 Chuck table 28a Holding surface 28b Pressing member 30 Grinding device 32 Chuck table 32a Holding surface 34 Grinding unit 36 Spindle 38 Wheel mount 40 Grinding wheel 40a Wheel base 40b Grinding wheel L1 Height difference L2 High Difference

Claims (3)

互いに交差する複数の分割予定ラインによって区画された複数の領域に電極バンプを備えるデバイスがそれぞれ形成されたデバイス領域と、該デバイス領域を囲む様に設けられ且つ該電極バンプが形成されていない外周余剰領域とを表面側に備える被加工物の加工方法であって、
該電極バンプの高さ方向の端部の高さ位置との差が許容範囲内である段差解消部材を、該外周余剰領域の形状に応じて、該外周余剰領域に形成する段差解消部材形成ステップと、
該段差解消部材形成ステップ後、該被加工物の該表面側を覆う様に該被加工物の該表面側に保護部材を貼り付ける保護部材貼り付けステップと、
該保護部材貼り付けステップ後、該保護部材側をチャックテーブルで保持し、該表面とは反対側に位置する該被加工物の裏面側を研削する研削ステップと、を備えることを特徴とする被加工物の加工方法。
A device region in which devices each having an electrode bump are formed in a plurality of regions defined by a plurality of planned dividing lines intersecting with each other, and an outer peripheral surplus that is provided so as to surround the device region and is not formed with the electrode bump. A method of processing a workpiece, which comprises a region and a surface side,
A step eliminating member forming step of forming a step eliminating member whose difference from the height position of the end portion in the height direction of the electrode bump is within an allowable range in the outer peripheral extra region in accordance with the shape of the outer peripheral extra region. When,
A protective member attaching step of attaching a protective member to the surface side of the workpiece so as to cover the surface side of the workpiece after the step of eliminating the step difference;
After the step of attaching the protective member, the step of holding the protective member side by a chuck table and grinding the back surface side of the workpiece located on the side opposite to the front surface is provided. How to process a work piece.
該段差解消部材形成ステップでは、ジェットディスペンサを用いて液状樹脂を該外周余剰領域に塗布することを特徴とする請求項1記載の被加工物の加工方法。 The method for processing a work piece according to claim 1, wherein in the step of eliminating the step difference, a liquid resin is applied to the outer peripheral surplus region by using a jet dispenser. 該段差解消部材形成ステップでは、硬化型液状樹脂を該外周余剰領域に塗布した後、該硬化型液状樹脂を硬化させて該外周余剰領域に該段差解消部材を形成することを特徴とする請求項1又は2記載の被加工物の加工方法。 The step difference eliminating member forming step comprises applying a curable liquid resin to the outer peripheral excess area and then curing the curable liquid resin to form the step difference eliminating member in the outer peripheral excessive area. The method for processing a workpiece according to 1 or 2.
JP2019014646A 2019-01-30 2019-01-30 Processing method of workpiece Pending JP2020123666A (en)

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WO2023189168A1 (en) * 2022-03-28 2023-10-05 リンテック株式会社 Workpiece processing method
WO2024070692A1 (en) * 2022-09-30 2024-04-04 リンテック株式会社 Workpiece processing method

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JP2005109433A (en) * 2004-03-31 2005-04-21 Disco Abrasive Syst Ltd Method for abrading semiconductor wafer and protecting member of bump for abrading
JP2009141265A (en) * 2007-12-10 2009-06-25 Lintec Corp Surface protection sheet and method for grinding semiconductor wafer
JP2010027685A (en) * 2008-07-15 2010-02-04 Lintec Corp Method for grinding semiconductor wafer

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JP2005109433A (en) * 2004-03-31 2005-04-21 Disco Abrasive Syst Ltd Method for abrading semiconductor wafer and protecting member of bump for abrading
JP2009141265A (en) * 2007-12-10 2009-06-25 Lintec Corp Surface protection sheet and method for grinding semiconductor wafer
JP2010027685A (en) * 2008-07-15 2010-02-04 Lintec Corp Method for grinding semiconductor wafer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023189168A1 (en) * 2022-03-28 2023-10-05 リンテック株式会社 Workpiece processing method
WO2024070692A1 (en) * 2022-09-30 2024-04-04 リンテック株式会社 Workpiece processing method

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