CN104924199A - Manufacturing technique of a single-sided ground silicon wafer with binding method - Google Patents
Manufacturing technique of a single-sided ground silicon wafer with binding method Download PDFInfo
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- CN104924199A CN104924199A CN201510281726.1A CN201510281726A CN104924199A CN 104924199 A CN104924199 A CN 104924199A CN 201510281726 A CN201510281726 A CN 201510281726A CN 104924199 A CN104924199 A CN 104924199A
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- silicon chip
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- bonding
- manufacture craft
- cleaning
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a manufacturing technique of a single-sided ground silicon wafer with a binding method, and relates to the technical field of silicon wafer grinding. According to the manufacturing technique, a prepressing plate, a heat insulating plate, a silicon wafer containing platform and a heating plate are used; with the adoption of a method by binding surfaces, not required to be ground, of two silicon wafers and then grinding the other two surfaces of the silicon wafers with a grinder, the purpose of quickly and efficiently removing the ground surfaces is achieved; and the manufacturing technique is high in practicability, and more convenient to use, improves the grinding efficiency greatly, protects the silicon wafers very well, allows the surfaces of the ground silicon wafers to meet requirements, and cannot affect an appearance effect of a component.
Description
[technical field]
The present invention relates to silicon chip grinding technical field, especially relate to a kind of manufacture craft of Method for bonding one side grinding silicon chip.
[background technology]
Known, silicon transistor has constantly released novel silicon power device and semiconductor manufacturing novel technique since appearance, but its foundation structure is diffuseed to form by the doping of III under high temperature (boron, aluminium, gallium), V race (phosphorus) elemental semiconductor impurity, in order to form N-/N+, P-/P+, N-/P+, P-/N+ moldeed depth junction structure, need wherein the grinding of one side N+ or P+ layer to remove, then need wherein one side N or P layer removal for rectifying device, traditional one side removing method has following several: thinning single surface, sandblasting, single-sided corrosion.
Sandblasting and single-sided corrosion can be implemented reluctantly for removal surplus less (being less than 10 microns), but also there is sand blasted surface inequality, damage layer inconsistence problems, and single-sided corrosion easily occurs that surface corrosion is cheated, and orange peel, the depth of parallelism become bad problem; And use thinning single surface machine thinning single surface, conventional thinning single surface machine uses 1000# emery wheel corase grind, and then use 2000# emery wheel, due to emery wheel size and equipment restriction itself can only monolithic or single file thinning, therefore working (machining) efficiency is low, and the wearing and tearing of emery wheel also can cause the thinning rear silicon chip depth of parallelism to become bad, processing uniformity is poor, because its motion track is fixed, thinning rear silicon chip surface can leave thinning texture, thus affects appearance of device effect.
[summary of the invention]
In order to overcome the deficiency in background technology, the invention discloses a kind of manufacture craft of Method for bonding one side grinding silicon chip, two silicon chips do not need the face of grinding to be glued together by adopting by the present invention, then by the method in other two faces of grinder grinding silicon chip, reach fast, efficiently remove the object of abradant surface with this.
In order to realize described goal of the invention, the present invention adopts following technical scheme:
A kind of manufacture craft of Method for bonding one side grinding silicon chip, comprise prefabricating plate, thermal insulation board, Sheng sheet platform and heating plate, first described manufacture craft comprises the steps:, cleaning silicon chip, the particle of silicon chip surface to be processed and organic matter are cleared up by the SC-1 cleaning fluid that silicon chip is special, uses pure water ultrasonic cleaning simultaneously;
Further, use non-contact type Thickness measuring instrument that every for silicon chip two microns of one grade of thickness are carried out stepping;
Further, open heating plate, be coated with uniformly in the non-abrasive side that the silicon chip of same shelves is paired and wax, then the alignment of two panels silicon chip bonds together, put into the containing tank containing sheet platform after bonding to heat, then use prefabricating plate to be pressed on silicon chip, wax unnecessary between silicon chip is extruded, after extruding, the silicon chip after precompressed is taken out by getting sheet mouth, cold solid by carrying out pressurization after silicon chip extracting;
Further, the silicon chip of the same thickness pasted is placed on grinder grinds;
Further, the silicon chip after grinding is first rinsed silicon chip surface by giant;
Further, silicon chip after cleaning is positioned in dewax solution and carries out invading bubble, then use plastic tab to have a common boundary along biplate silicon chip is separated, then the silicon chip after being separated is carried out dewax cleaning, more just can complete the dewax cleaning of silicon chip by pure water ultrasonic cleaning.
Described non-contact type Thickness measuring instrument is amesdial.
The temperature of described heating plate controls at 90 DEG C ~ 120 DEG C, and the heat time is 1 minute ~ 2 minutes, and prefabricating plate is to being the pressing time of silicon chip 15 seconds ~ 30 seconds.
The described pressurization cold solid time is 30 seconds ~ 50 seconds, and the weight of pressurization is 10 kilograms ~ 20 kilograms.
Between described bonding rear silicon chip, the thickness of wax layer is between 5 ± 2 μm.
The temperature of invading bubble dewax solution before described separation is 80 DEG C ~ 100 DEG C, and invading the bubble time is 2 minutes ~ 5 minutes.
The temperature of the dewax solution that described separation is cleaned afterwards is 50 DEG C ~ 70 DEG C, and scavenging period is 8 minutes ~ 13 minutes.
The time of described pure water first ultrasonic cleaning is 8 minutes ~ 13 minutes, supersonic frequency is 20 ~ 30KHZ, the time of pure water ultrasonic cleaning is used to be 13 minutes ~ 17 minutes after rinsing lapping liquid before silicon chip is separated, supersonic frequency is 20 ~ 30KHZ, the time of last pure water ultrasonic cleaning is 3 minutes ~ 8 minutes, and supersonic frequency is 20 ~ 30KHZ.
Cushion is provided with bottom described containing tank.
Owing to have employed technique scheme, the present invention has following beneficial effect:
The manufacture craft of a kind of Method for bonding one side grinding silicon chip of the present invention, comprise prefabricating plate, thermal insulation board, Sheng sheet platform and heating plate, the face of grinding is not needed to be glued together two silicon chips by adopting, then by the method in other two faces of grinder grinding silicon chip, reach fast, efficiently remove the object of abradant surface with this; The present invention is practical, uses more convenient, has increased substantially the efficiency of grinding, has not only well protected silicon chip, and the silicon chip surface after grinding is met the requirements, can not affect appearance of device effect.
[accompanying drawing explanation]
Fig. 1 is perspective view of the present invention;
In figure: 1, prefabricating plate; 2, thermal insulation board; 3, containing tank; 4, sheet mouth is got; 5, sheet platform is contained; 6, heating plate.
[detailed description of the invention]
By explanation the present invention that the following examples can be detailed, disclose object of the present invention and be intended to protect all technological improvements in the scope of the invention.
The manufacture craft of 1 enforcement a kind of Method for bonding one side grinding silicon chip of the present invention by reference to the accompanying drawings, manufacture craft comprises the steps:
First, cleaning silicon chip, is cleared up the particle of silicon chip surface to be processed and organic matter by the SC-1 cleaning fluid that silicon chip is special, guarantees that the surface of silicon chip does not have particle, and with pure water ultrasonic cleaning 10 minutes, supersonic frequency was 23 KHZ;
Further, use amesdial that every for silicon chip two microns of one grade of thickness are carried out stepping, will note during classification protecting the side of not grinding;
Further, open heating plate 6, the temperature of heating plate is made to remain on 98 DEG C, then be coated with uniformly in the non-abrasive side that the silicon chip of same shelves is paired and wax, the one side alignment of being waxed by two panels silicon chip bonds together, put into the containing tank 3 containing sheet platform 5 after bonding to heat, heat time is 70 seconds, then prefabricating plate 1 is used to be pressed on silicon chip with thermal insulation board 2 side, wax unnecessary between silicon chip is extruded, the pressing time of prefabricating plate 1 pair of silicon chip is 20 seconds, after extruding, the silicon chip after precompressed is taken out by getting sheet mouth 4, cold solid by carrying out pressurization after silicon chip extracting, the weight of pressurization is 15 kilograms, cold solid time of pressurizeing is 40 seconds, to make between bonding rear silicon chip wax-layer thickness between 5 ± 2 μm,
Further, being placed on by the silicon chip of the same thickness pasted and grinder adds lapping liquid carrying out twin grinding, is ensure that consistency of thickness is removed in top and bottom, removes thickness one half by upper and lower for silicon chip turn-over once being ground to;
Further, the silicon chip after grinding is first rinsed silicon chip surface by giant, washes away the lapping liquid of silicon chip surface, then uses pure water ultrasonic cleaning 15 minutes;
Further, it is carry out invading bubble in the dewax solution of 90 DEG C that silicon chip after cleaning is positioned over temperature, invading the bubble time is 3 minutes, then plastic tab is used to be separated by silicon chip along biplate intersection, again the silicon chip after separation being put into temperature is 60 DEG C, concentration is carry out cleaning 10 minutes in the dewax solution of 3%, then within 5 minutes, just can complete the dewax cleaning of silicon chip by pure water ultrasonic cleaning.
Part not in the detailed description of the invention is prior art.
Claims (9)
1. the manufacture craft of a Method for bonding one side grinding silicon chip, comprise prefabricating plate, thermal insulation board, Sheng sheet platform and heating plate, it is characterized in that: first described manufacture craft comprises the steps:, cleaning silicon chip, the particle of silicon chip surface to be processed and organic matter are cleared up by the SC-1 cleaning fluid that silicon chip is special, uses pure water ultrasonic cleaning simultaneously;
Further, use non-contact type Thickness measuring instrument that every for silicon chip two microns of one grade of thickness are carried out stepping;
Further, open heating plate, be coated with uniformly in the non-abrasive side that the silicon chip of same shelves is paired and wax, then the alignment of two panels silicon chip bonds together, put into the containing tank containing sheet platform after bonding to heat, then use prefabricating plate to be pressed on silicon chip, wax unnecessary between silicon chip is extruded, after extruding, the silicon chip after precompressed is taken out by getting sheet mouth, cold solid by carrying out pressurization after silicon chip extracting;
Further, the silicon chip of the same thickness pasted is placed on grinder grinds;
Further, the silicon chip after grinding is first rinsed silicon chip surface by giant;
Further, silicon chip after cleaning is positioned in dewax solution and carries out invading bubble, then use plastic tab to have a common boundary along biplate silicon chip is separated, then the silicon chip after being separated is carried out dewax cleaning, more just can complete the dewax cleaning of silicon chip by pure water ultrasonic cleaning.
2. the manufacture craft of a kind of Method for bonding one side grinding silicon chip according to claim 1, is characterized in that: described non-contact type Thickness measuring instrument is amesdial.
3. the manufacture craft of a kind of Method for bonding one side grinding silicon chip according to claim 1, is characterized in that: the temperature of described heating plate controls at 90 DEG C ~ 120 DEG C, and the heat time is 1 minute ~ 2 minutes, and prefabricating plate is to being the pressing time of silicon chip 15 seconds ~ 30 seconds.
4. the manufacture craft of a kind of Method for bonding one side grinding silicon chip according to claim 1, is characterized in that: the described pressurization cold solid time is 30 seconds ~ 50 seconds, and the weight of pressurization is 10 kilograms ~ 20 kilograms.
5. the manufacture craft of a kind of Method for bonding one side grinding silicon chip according to claim 1, is characterized in that: between described bonding rear silicon chip, the thickness of wax layer is between 5 ± 2 μm.
6. the manufacture craft of a kind of Method for bonding one side grinding silicon chip according to claim 1, is characterized in that: the temperature of invading bubble dewax solution before described separation is 80 DEG C ~ 100 DEG C, and invading the bubble time is 2 minutes ~ 5 minutes.
7. the manufacture craft of a kind of Method for bonding one side grinding silicon chip according to claim 1, is characterized in that: the temperature of the dewax solution that described separation is cleaned afterwards is 50 DEG C ~ 70 DEG C, and scavenging period is 8 minutes ~ 13 minutes.
8. the manufacture craft of a kind of Method for bonding one side grinding silicon chip according to claim 1, it is characterized in that: the time of described pure water first ultrasonic cleaning is 8 minutes ~ 13 minutes, supersonic frequency is 20 ~ 30KHZ, the time of pure water ultrasonic cleaning is used to be 13 minutes ~ 17 minutes after rinsing lapping liquid before silicon chip is separated, supersonic frequency is 20 ~ 30KHZ, the time of last pure water ultrasonic cleaning is 3 minutes ~ 8 minutes, and supersonic frequency is 20 ~ 30KHZ.
9. the manufacture craft of a kind of Method for bonding one side grinding silicon chip according to claim 1, is characterized in that: be provided with cushion bottom described containing tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510281726.1A CN104924199A (en) | 2015-05-28 | 2015-05-28 | Manufacturing technique of a single-sided ground silicon wafer with binding method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510281726.1A CN104924199A (en) | 2015-05-28 | 2015-05-28 | Manufacturing technique of a single-sided ground silicon wafer with binding method |
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| CN104924199A true CN104924199A (en) | 2015-09-23 |
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| CN201510281726.1A Pending CN104924199A (en) | 2015-05-28 | 2015-05-28 | Manufacturing technique of a single-sided ground silicon wafer with binding method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107243821A (en) * | 2017-08-02 | 2017-10-13 | 上海超硅半导体有限公司 | A kind of single-sided polishing method of sapphire substrate sheet |
| CN114147563A (en) * | 2021-12-15 | 2022-03-08 | 九江市庐山新华电子有限公司 | Efficient grinding machine for producing wafers |
| US11919125B2 (en) | 2018-09-29 | 2024-03-05 | Corning Incorporated | Carrier wafers and methods of forming carrier wafers |
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| JPH01274433A (en) * | 1988-04-27 | 1989-11-02 | Fujitsu Ltd | Manufacture of semiconductor wafer |
| JPH02178927A (en) * | 1988-12-29 | 1990-07-11 | Hitachi Ltd | Method of polishing plate |
| CN101373717A (en) * | 2008-10-23 | 2009-02-25 | 杭州杭鑫电子工业有限公司 | Method for manufacturing transistor by thinning silicon monocrystal thin sheet prediffusion single face |
| CN101807626A (en) * | 2010-03-17 | 2010-08-18 | 中国科学院半导体研究所 | GaAs/InP chip low-temperature direct bonding method for multi-junction solar cell |
| CN102753636A (en) * | 2010-02-12 | 2012-10-24 | 道康宁公司 | Temporary wafer bonding method for semiconductor processing |
| CN202572118U (en) * | 2012-04-24 | 2012-12-05 | 正恩科技有限公司 | Thinning structure for light emitting diode wafer |
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2015
- 2015-05-28 CN CN201510281726.1A patent/CN104924199A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH01274433A (en) * | 1988-04-27 | 1989-11-02 | Fujitsu Ltd | Manufacture of semiconductor wafer |
| JPH02178927A (en) * | 1988-12-29 | 1990-07-11 | Hitachi Ltd | Method of polishing plate |
| CN101373717A (en) * | 2008-10-23 | 2009-02-25 | 杭州杭鑫电子工业有限公司 | Method for manufacturing transistor by thinning silicon monocrystal thin sheet prediffusion single face |
| CN102753636A (en) * | 2010-02-12 | 2012-10-24 | 道康宁公司 | Temporary wafer bonding method for semiconductor processing |
| CN101807626A (en) * | 2010-03-17 | 2010-08-18 | 中国科学院半导体研究所 | GaAs/InP chip low-temperature direct bonding method for multi-junction solar cell |
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| 王占国等: "《信息功能材料手册·上》", 30 June 2009 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107243821A (en) * | 2017-08-02 | 2017-10-13 | 上海超硅半导体有限公司 | A kind of single-sided polishing method of sapphire substrate sheet |
| US11919125B2 (en) | 2018-09-29 | 2024-03-05 | Corning Incorporated | Carrier wafers and methods of forming carrier wafers |
| CN114147563A (en) * | 2021-12-15 | 2022-03-08 | 九江市庐山新华电子有限公司 | Efficient grinding machine for producing wafers |
| CN114147563B (en) * | 2021-12-15 | 2022-11-29 | 九江市庐山新华电子有限公司 | High-efficient machine that grinds of production wafer |
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Application publication date: 20150923 |
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