CN202572118U - Thinning structure for light emitting diode wafer - Google Patents
Thinning structure for light emitting diode wafer Download PDFInfo
- Publication number
- CN202572118U CN202572118U CN 201220178535 CN201220178535U CN202572118U CN 202572118 U CN202572118 U CN 202572118U CN 201220178535 CN201220178535 CN 201220178535 CN 201220178535 U CN201220178535 U CN 201220178535U CN 202572118 U CN202572118 U CN 202572118U
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- light emitting
- emitting diode
- diode wafer
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- film
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Abstract
The utility model provides a thinning structure for a light emitting diode wafer. The thinning structure is used for thinning the light emitting diode wafer and comprises a vacuum absorption device, a protective adhesion film and a grinding device. The vacuum absorption device is provided with an air suction surface, and the air suction surface is provided with a plurality of air suction holes for providing negative pressure; the protective adhesion film is provided with an adhesion surface and an absorbed surface, the adhesion surface is adhered on the light emitting diode wafer, and the absorbed surface is absorbed on the air suction surface and covers the air suction holes, so that the light emitting diode wafer is absorbed by the vacuum suction device, and the protective adhesion film is arranged between the light emitting diode wafer and the vacuum suction device; and the grinding device is provided with a grinding head, and the grinding head is in contact with the light emitting diode wafer rotationally, so that the light emitting diode wafer can be thinned. Owing to the protection effect of the protective adhesion film, the facts that the light emitting diode wafer is broken and damaged or a crystal growing surface of the light emitting diode wafer is scratched due to excessive stress can be avoided, the thinning structure for the light emitting diode wafer is high in yield, and service requirements can be met.
Description
Technical field
The utility model relates to the light emitting diode wafer, relates in particular to the attenuate structure of light emitting diode wafer.
Background technology
See also shown in Figure 1ly, light emitting diode wafer 1 must carry out the grinding wafer operation after make accomplishing, and reducing thickness, and is beneficial to operations such as follow-up wafer cutting, encapsulation.
Known luminescence diode wafer 1 must be in addition fixed when grinding operation, however suitable thin of the thickness of light emitting diode wafer 1; See also shown in Figure 2; Vacuum suction fixture 2 that its manufacture of semiconductor as using uses, required constant intensity when grinding, light emitting diode wafer 1 in order to satisfy might be because absorption affinity crosses by force local compression; It can cause crack or fragmentation, perhaps causes long crystal face scratch.
Therefore see also Fig. 3 and shown in Figure 4; Known before carrying out grinding operation; Be generally and utilize fixing cured 3 to stick together and be fixed on the workbench 4 a plurality of light emitting diode wafers 1, and keep light emitting diode wafer 1 motionless, therefore when using lapping device 5 to grind; Can utilize fixing cured 3 closely to attach the surface of light emitting diode wafers 1 and be attached on this workbench 4; Also be and utilize fixing cured 3 protection light emitting diode wafers 1,, cause crack or fragmentation to avoid grinding head 6 when the attenuate light emitting diode wafer 1.
Yet this fixed form; And after grinding and polishing operation finishes; Must use the spade cured 2 fixing light emitting diode wafers 1 that will be fixed to stick up; This operation is improper if the application of force has slightly, very easily makes light emitting diode wafer 1 produce fragmentation or crack, and it is that present light emitting diode wafer 1 promotes one of bottleneck of process rate.
Obviously known fixed light emitting diode wafer 1 mode of carrying out the attenuate operation is prone to become the bottleneck of process rate, can't satisfy the needs in the use.
The utility model content
So; The main purpose of the utility model is to disclose a kind of attenuate structure of light emitting diode wafer; It can protect the light emitting diode wafer, avoids the light emitting diode wafer in thinning process, produces crack, fragmentation or long crystal face scratch because of local pressure is excessive.
Based on above-mentioned purpose; The utility model is a kind of light emitting diode wafer attenuate structure, is used for attenuate one light emitting diode wafer, and it comprises a vacuum absorption device, a film and a lapping device are pasted in a protection; Wherein this vacuum absorption device has a suction face; This suction face is provided with a plurality of suction holes that negative pressure is provided, and this protection pastes film and have the face of pasting and and be adsorbed face, and this is pasted face and pastes this light emitting diode wafer; And this is adsorbed face and is attached on this suction face and covers this suction hole; So that film is pasted in this light emitting diode wafer this protection of interval and by this vacuum absorption device absorption, this lapping device has a grinding head again, this this light emitting diode wafer of grinding head rotation contact is with this light emitting diode wafer of attenuate.
Further, protection paste film the corresponding said light emitting diode wafer of size size and be provided with.
Further, protection paste film the corresponding vacuum absorption device of size suction face size and be provided with, and the light emitting diode wafer has a plurality of and the light emitting diode wafer scatters to paste and on the face.
In view of the above, the advantage that the utility model is compared prior art is, is the complete bottom that sticks in this light emitting diode wafer because film is pasted in this protection; And it is the material with toughness that film is pasted in this protection; Therefore can increase the structural strength of this light emitting diode wafer, and protect this light emitting diode wafer, and can avoid the edge of this light emitting diode wafer because stressed excessive and break; Cause the damage of this light emitting diode wafer; Perhaps can avoid causing long crystal face scratch, and form a kind of light emitting diode wafer attenuate structure of high yield, can satisfy the needs in the use.
Description of drawings
Fig. 1 is known luminescence diode crystal circle structure figure.
Fig. 2 is a fixedly sketch map of known luminescence diode wafer.
Fig. 3 is a fixedly sketch map of another known luminescence diode wafer.
Fig. 4 is another known luminescence diode wafer attenuate sketch map.
Fig. 5 is the utility model STRUCTURE DECOMPOSITION figure.
Fig. 6 is the utility model textural association figure.
Fig. 7 is another enforcement STRUCTURE DECOMPOSITION of the utility model figure.
The specific embodiment
Detailed description of relevant the utility model and technology contents just cooperate graphic explanation following at present:
See also Fig. 5 and shown in Figure 6; The utility model is a kind of attenuate structure of light emitting diode wafer; Be used for attenuate one light emitting diode wafer 10, it comprises a vacuum absorption device 20, a film 30A and a lapping device 40 are pasted in a protection, and wherein this vacuum absorption device 20 has a suction face 21; This suction face 21 is provided with a plurality of suction holes 22 that negative pressure is provided; This vacuum absorption device 20 can built-in air pump (figure does not show), reaches vacuum state to utilize air pump to discharge gas, in these a plurality of suction holes 22 places negative pressure to be provided.
This protection is pasted film 30A and is had the face of pasting 31 and and be adsorbed face 32, and it is the plastic sheeting with toughness that film 30A is pasted in this protection, coats viscose and processes as using the PVC film.And this is pasted face 31 and pastes this light emitting diode wafer 10, and this is adsorbed face 32 and is attached on this suction face 21, and covers this suction hole 22 so that this light emitting diode wafer 10 at interval these protections paste film 30A by these vacuum absorption device 20 absorption.This lapping device 40 has a grinding head 41, and these grinding head 41 rotations contact these light emitting diode wafers 10 and this light emitting diode wafer 10 of attenuate.
When the utility model is implemented in reality, for adsorbing a plurality of light emitting diode wafers 10 simultaneously, to grind simultaneously and polishing operation; Its embodiment can be divided into two kinds, and one of which is as shown in Figure 5; This protection is pasted film 30A and is of a size of being provided with by light emitting diode wafer 10; Also promptly under each these light emitting diode wafer 10 wafer, all film 30A is pasted in correspondence this protection that same size is set, and it can save the material that film 30A is pasted in this protection.
And another kind of embodiment; See also shown in Figure 7; Size that this protection pastes film 30B is provided with suction face 21 that should vacuum absorption device 20; And this light emitting diode wafer 10 has a plurality of and scatter and to stick in this and paste on the face 31, even also a plurality of this light emitting diode wafer 10 is pasted in same protection and pasted on the film 30B, its needs that can reduce successive process are removed the puzzlement that film 30B is pasted in protection one by one.
As stated, the utility model is pasted the complete bottom that is attached to this light emitting diode wafer of film through making this protection with toughness, therefore can be through increasing the structural strength of this light emitting diode wafer; Protect this light emitting diode wafer; So can resist the stress rupture that the attenuate operation is produced, avoid this light emitting diode wafer because of stressed excessive breaking, perhaps avoid long crystal face scratch; The light emitting diode wafer attenuate structure that it forms a kind of high yield can satisfy the needs in the use.
Claims (3)
1. the attenuate structure of a light emitting diode wafer is used for attenuate one light emitting diode wafer, it is characterized in that the attenuate structure of said light emitting diode wafer comprises:
One vacuum absorption device, said vacuum absorption device has a suction face, and said suction face is provided with a plurality of suction holes that negative pressure is provided;
Film is pasted in one protection; Said protection is pasted film and is had the face of pasting and and be adsorbed face; The said face of pasting is pasted said light emitting diode wafer; And the said face that is adsorbed is attached on the said suction face and covers said suction hole so that said light emitting diode wafer at interval said protection paste film and by said vacuum absorption device absorption;
One lapping device, said lapping device has a grinding head, and the said light emitting diode wafer of said grinding head rotation contact is with the said light emitting diode wafer of attenuate.
2. the attenuate structure of light emitting diode wafer according to claim 1 is characterized in that, said protection paste film the corresponding said light emitting diode wafer of size size and be provided with.
3. light emitting diode wafer attenuate structure according to claim 1; It is characterized in that; Said protection paste film the corresponding said vacuum absorption device of size said suction face size and be provided with, and said light emitting diode wafer has a plurality of and said light emitting diode wafer and scatters to paste said and paste on the face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220178535 CN202572118U (en) | 2012-04-24 | 2012-04-24 | Thinning structure for light emitting diode wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220178535 CN202572118U (en) | 2012-04-24 | 2012-04-24 | Thinning structure for light emitting diode wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202572118U true CN202572118U (en) | 2012-12-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220178535 Expired - Lifetime CN202572118U (en) | 2012-04-24 | 2012-04-24 | Thinning structure for light emitting diode wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202572118U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104924199A (en) * | 2015-05-28 | 2015-09-23 | 洛阳鸿泰半导体有限公司 | Manufacturing technique of a single-sided ground silicon wafer with binding method |
| CN105643431A (en) * | 2014-12-02 | 2016-06-08 | 中芯国际集成电路制造(上海)有限公司 | Wafer grinding method |
| CN106129194A (en) * | 2016-08-05 | 2016-11-16 | 华灿光电（浙江）有限公司 | Manufacturing method of red-yellow light emitting diode |
| CN106695538A (en) * | 2015-11-18 | 2017-05-24 | 富鼎电子科技(嘉善)有限公司 | Grinding fixing device and grinding method using grinding fixing device |
| US9728672B2 (en) | 2015-02-17 | 2017-08-08 | Genesis Photonics Inc. | Light emitting diode and manufacturing method thereof |
| CN107263301A (en) * | 2017-06-26 | 2017-10-20 | 镓特半导体科技（上海）有限公司 | A kind of method that abrasive chemical mechanically polishes gallium nitride wafer piece |
| CN110774077A (en) * | 2019-10-21 | 2020-02-11 | 王春宏 | Wafer processing thinning machine |
-
2012
- 2012-04-24 CN CN 201220178535 patent/CN202572118U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105643431A (en) * | 2014-12-02 | 2016-06-08 | 中芯国际集成电路制造(上海)有限公司 | Wafer grinding method |
| US9728672B2 (en) | 2015-02-17 | 2017-08-08 | Genesis Photonics Inc. | Light emitting diode and manufacturing method thereof |
| CN104924199A (en) * | 2015-05-28 | 2015-09-23 | 洛阳鸿泰半导体有限公司 | Manufacturing technique of a single-sided ground silicon wafer with binding method |
| US10177272B2 (en) | 2015-07-23 | 2019-01-08 | Genesis Photonics Inc. | Light-emitting diode and a method for manufacturing the same |
| CN106695538A (en) * | 2015-11-18 | 2017-05-24 | 富鼎电子科技(嘉善)有限公司 | Grinding fixing device and grinding method using grinding fixing device |
| CN106695538B (en) * | 2015-11-18 | 2019-07-05 | 富鼎电子科技(嘉善)有限公司 | Grind fixed device and the grinding method using the fixed device of the grinding |
| CN106129194A (en) * | 2016-08-05 | 2016-11-16 | 华灿光电（浙江）有限公司 | Manufacturing method of red-yellow light emitting diode |
| CN107263301A (en) * | 2017-06-26 | 2017-10-20 | 镓特半导体科技（上海）有限公司 | A kind of method that abrasive chemical mechanically polishes gallium nitride wafer piece |
| CN107263301B (en) * | 2017-06-26 | 2019-05-14 | 镓特半导体科技（上海）有限公司 | A kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece |
| CN110774077A (en) * | 2019-10-21 | 2020-02-11 | 王春宏 | Wafer processing thinning machine |
| CN110774077B (en) * | 2019-10-21 | 2021-08-10 | 无锡芯坤电子科技有限公司 | Wafer processing thinning machine |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20121205 |
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| CX01 | Expiry of patent term |