CN107611254B - A kind of diffusion interlinked device of PZT/Si - Google Patents
A kind of diffusion interlinked device of PZT/Si Download PDFInfo
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- CN107611254B CN107611254B CN201710653811.5A CN201710653811A CN107611254B CN 107611254 B CN107611254 B CN 107611254B CN 201710653811 A CN201710653811 A CN 201710653811A CN 107611254 B CN107611254 B CN 107611254B
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 238000003825 pressing Methods 0.000 claims abstract description 25
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000003963 antioxidant agent Substances 0.000 claims description 2
- 230000003078 antioxidant effect Effects 0.000 claims description 2
- 235000006708 antioxidants Nutrition 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 121
- 238000002360 preparation method Methods 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 6
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000003921 oil Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000002480 mineral oil Substances 0.000 description 2
- 235000010446 mineral oil Nutrition 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229960002415 trichloroethylene Drugs 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
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- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The present invention provides a kind of diffusion interlinked devices of PZT/Si, belong to advanced manufacturing technology field.A kind of diffusion interlinked device of PZT/Si, including pedestal, bolt fastener, briquetting, flexible pressing plate and nut fastener；It is machined with rectangular straight slot at the center of the pedestal, for placing PZT element and silicon substrate to be bonded；The briquetting is placed on PZT element and silicon substrate to be bonded, for compressing PZT element and silicon substrate to be bonded in rectangular straight slot；The flexible pressing plate is fastened by bolts part and nut fastener is fixed on the base, and compresses the briquetting being placed in rectangular straight slot.This device can guarantee that bonding pressure is uniform between PZT element and silicon wafer, keeps PZT/Si diffusion interlinked sufficiently, bond strength and bonding quality is improved, in addition, this device has many advantages, such as that structure is simple, easily operated.
Description
Technical field
The invention belongs to advanced manufacturing technology fields, provide a kind of diffusion interlinked device of PZT/Si.
Background technique
In recent years, as information collection, processing, the integrated MEMS (Micro-Electro- of execution
Mechanical Systems, MEMS) with its micromation, low energy consumption, high sensitivity, it is highly integrated the advantages that by academia and
The highest attention of industrial circle.
Piezoelectric material has can be by electric energy and the mechanical sensing that can be carried out the characteristic mutually converted, made using piezoelectric material
The piezoelectric MEMS devices such as device, actuator, energy harvester (pMEMS) have become an important branch of MEMS research field.
Wherein, it occupies an leading position by the pMEMS device of substrate of silicon.Lead zirconate titanate (PZT) piezoceramic material has relatively because of it
High piezoelectric coefficient d33, and it is widely used in silicon based piezoelectricity device.To prepare Silicon PZT piezoelectric device, it is necessary first to by PZT
Piezoelectric layer is integrated with silicon substrate, and piezoelectric layer thickness is usually 10~500 μm or so in pMEMS device, different to adapt to
Application demand generally also there is patterning to require it.Currently, preparing the method for PZT on a silicon substrate predominantly on silicon wafer
Direct precipitation film forming and mechanical reduction bulk are pasted onto silicon chip surface again.Direct precipitation PZT film needs follow-up sintering on silicon wafer
Crystallization treatment, the thermal mismatching of silicon and PZT generate larger stress in PZT sintering crystallization process, be easy to cause PZT crack into
And influence PZT film piezoelectric property.Since PZT is fragile material, it is the machining limit that PZT bulk, which is thinned to 100 μm, and
Yield rate is only 10%, subsequent transfer be bonded operation it is extremely difficult, by machining process by PZT bulk be thinned reuse
The method of glue bond on a silicon substrate is unfavorable for producing in batches.PZT/Si diffusion bond merges the techniques such as the grinding of bonding machine tool, polishing
It is the effective way for preparing PZT/Si element, the pMEMS device based on this method preparation has brilliant piezoelectric property.However,
In carrying out the diffusion interlinked technical process of PZT/Si, it is easy to appear unbalance stress between PZT and silicon, in turn results in PZT/Si bonding
Insufficient and bond strength is poor, influences PZT/Si element function.
Summary of the invention
The invention solves technical problem be to overcome the shortcomings of above-mentioned technology, invent a kind of PZT/Si diffusion bond and attach together
It sets.Firstly, carrying out surface preparation to PZT element and silicon substrate.PZT element and silicon substrate to be bonded are placed on the base,
Hemispherical briquetting is placed on PZT element, hemispherical briquetting is compressed by flexible pressing plate, and then apply to PZT element and silicon substrate
Plus-pressure, pressure size can be adjusted by fastener.Flexible pressing plate and hemispherical briquetting constitute single-point force modes, it is ensured that
Uniform stressed between PZT element and silicon substrate faying face；Then, by the PZT element of compression and silicon substrate together with bonding apparatus entirety
It is placed in held for some time in high temperature furnace, make lead element and silicon in PZT film that diffusion reaction occur and forms diffusion interlinked layer, from
And realize the firm combination of PZT element/silicon；Finally, obtaining the PZT of required thickness using subsequent mechanical grinding and polishing process
Piezoelectric layer.This device can guarantee that bonding pressure is uniform between PZT element and silicon wafer, keeps PZT/Si diffusion interlinked sufficiently, improves bonding
Intensity and bonding quality, in addition, this device has many advantages, such as that structure is simple, easily operated.
Technical solution of the present invention:
A kind of diffusion interlinked device of PZT/Si, including pedestal 1, bolt fastener 2, briquetting 3, flexible pressing plate 4 and nut are tight
Firmware 7；
Steps are as follows:
1) surface preparation of PZT element and silicon substrate
Before the diffusion interlinked technique for implementing PZT/Si, surface preparation need to be carried out to PZT element 5 and silicon substrate 6.For
PZT element 5 is allowed to surface smoothness lower than 600nm, roughness is low firstly, carrying out mechanical lapping polishing treatment to its PZT film
In 500nm, required with meeting bonding；Then, using acetone, the organic impurities of deionized water removal PZT film surface attachment；Most
Afterwards, oil removal treatment is carried out to PZT element 5 using degreasing fluid, removes the saponified oil and mineral oil on PZT film surface；
It for silicon substrate 6, is cleaned by RCA standard cleaning method, to remove the impurity of surface attachment；
2) pressurized treatments of PZT element and silicon substrate
Diffusion interlinked due to PZT/Si need to carry out under 700~1000 DEG C of hot conditions, and keep the temperature 10~60min,
The pedestal 1 and briquetting 3 is process by heat-resisting materials such as aluminium oxide, zirconium oxides, bolt fastener 2 and nut fastener
7 and flexible 4 the selection of material of pressing plate be high temperature resistants, anti-oxidant, high-strength material such as 310S stainless steel (0Cr25Ni20).In pedestal 1
A rectangular straight slot is processed at center to place PZT element 5 to be bonded (bonding face is in PZT film side) and silicon substrate 6.Described scratches
Property pressing plate 4 be fastened by bolts part 2 and nut fastener 7 is fixed on pedestal 1, compress the briquetting 3 being placed in rectangular straight slot.
For the diffusion interlinked technique for implementing PZT/Si, the bonding pressure between 6 faying face of PZT element 5 and silicon substrate should guarantee uniformly as far as possible,
For this purpose, the briquetting 3 is processed into hemispherical.Hemispherical briquetting 3 and flexible pressing plate 4 provide single-point force modes, pass through tune
The tightness of bolt fastener 2 and nut fastener 7 is saved, pressure is uniformly applied to PZT element 5 through briquetting 3 by flexible pressing plate 4
On, to ensure that the uniformity of bonding pressure between 6 faying face of PZT element 5 and silicon substrate；
3) PZT element is bonded with the High temperature diffusion of silicon substrate
After completing above-mentioned processing step, bonding apparatus, PZT element 5 and silicon substrate 6 are integrally placed at 700~1000 DEG C of height
Under warm environment, and 10~60min is kept the temperature, completes PZT element 5 and be bonded with the High temperature diffusion of silicon substrate 6；
4) reduction processing of PZT element
After completion PZT element 5 is bonded with the High temperature diffusion of silicon substrate 6, using mechanical lapping and polishing process, to PZT member
The PZT bulk part of part 5 carries out reduction processing, obtains the PZT piezoelectric layer of required thickness.Meanwhile PZT piezoelectric layer surface flatness
Lower than 800nm, roughness is 100~500nm.
The PZT element 5 is made of PZT bulk, electrode and PZT film.
The invention has the benefit that a kind of diffusion interlinked device of PZT/Si is provided, firstly, to PZT element and silicon substrate
Carry out surface preparation.PZT element and silicon substrate to be bonded are placed on the base, and hemispherical briquetting is placed on PZT element,
Hemispherical briquetting is compressed by flexible pressing plate, and then pressure is applied to PZT element and silicon substrate, pressure size can pass through fastener
It adjusts.Flexible pressing plate and hemispherical briquetting constitute single-point force modes, it is ensured that between PZT element and silicon substrate faying face uniformly by
Power；Then, the PZT element of compression and silicon wafer are integrally placed at held for some time in high temperature furnace together with bonding apparatus, make PZT film
In lead element and silicon diffusion reaction occur form diffusion interlinked layer, realize the firm combination of PZT element/silicon；Finally, after utilizing
Continuous mechanical lapping and polishing process, obtain the PZT piezoelectric layer of required thickness.This device can guarantee to be bonded between PZT element and silicon wafer
Pressure is uniform, keeps PZT/Si diffusion interlinked sufficiently, improves bond strength and bonding quality, in addition, this device have structure it is simple,
The advantages that easily operated.
Detailed description of the invention
Fig. 1 is the diffusion interlinked device main view of PZT/Si.
Fig. 2 is the diffusion interlinked device top view of PZT/Si.
In figure: 1 pedestal；2 bolt fasteners；3 briquettings；4 flexible pressing plates；5PZT element；6 silicon substrates；
7 nut fasteners.
Specific embodiment
Below in conjunction with technical solution and the attached drawing specific embodiment that the present invention will be described in detail.
The diffusion interlinked device of the PZT/Si of embodiment mainly by pedestal 1, bolt fastener 2, briquetting 3, flexible pressing plate 4 and
Nut fastener 7 forms.The pedestal 1 and briquetting 3 is process by aluminium oxide ceramics, bolt fastener 2, flexible pressing plate 4
It is 310S stainless steel with 7 the selection of material of nut fastener.Firstly, at the center of pedestal 1 process a rectangular straight slot with place to
The PZT element 5 and silicon substrate 6 of bonding.The flexible pressing plate 4 is fastened by bolts part 2 and nut fastener 7 is fixed on pedestal
On 1, the briquetting 3 being placed in rectangular straight slot is compressed.For the diffusion interlinked technique for implementing PZT/Si, PZT element 5 and silicon substrate 6
Bonding pressure between faying face should guarantee uniformly as far as possible, and the briquetting 3 is processed into hemispherical, hemispherical briquetting 3 and flexible pressure
Plate 4 provides single-point force modes, and by adjusting the tightness of bolt fastener 2 and nut fastener 7, flexible pressing plate 4 is passed through
Pressure is uniformly applied on PZT element 5 by briquetting 3, to ensure that bonding pressure between 6 faying face of PZT element 5 and silicon substrate
Uniformity；Then, the PZT element of compression 5 and silicon substrate 6 are integrally placed at one timing of heat preservation in high temperature furnace together with bonding apparatus
Between, make lead element and silicon in the PZT film of PZT element 5 that diffusion reaction occur and form diffusion interlinked layer, realizes PZT element/silicon
It is firm to combine；Finally, obtaining the PZT piezoelectric layer of required thickness using subsequent mechanical grinding and polishing process.
The specific implementation step of embodiment is as follows:
1) surface preparation of PZT element and silicon substrate
PZT element 5 is made of PZT bulk, electrode and PZT film in the present embodiment.In the diffusion interlinked work for implementing PZT/Si
Before skill, surface preparation need to be carried out to PZT element 5 and silicon substrate 6.For PZT element 5, firstly, being carried out to its PZT film mechanical
Grinding and polishing processing, is allowed to surface smoothness and roughness respectively reaches 500nm and 300nm, is required with meeting electrode sputtering；With
Afterwards, using 10min is successively cleaned by ultrasonic under acetone, ethyl alcohol, deionized water, trichloro ethylene room temperature, to remove having for surface attachment
Machine impurity；Finally, carrying out 5~10min at a temperature of 30~40 DEG C using degreasing fluid and being ultrasonically treated, to remove surface saponification oil
And mineral oil；
It for silicon substrate 6, is cleaned using preceding by RCA standard cleaning method, to remove the impurity of surface attachment.This reality
Applying the silicon wafer selected in example is single-sided polishing monocrystalline silicon piece, having a size of 15mm × 12mm × 0.3mm (length × width x thickness)；
2) pressurized treatments of PZT element and silicon substrate
PZT element 5 to be bonded (PZT film side is bonding face) and silicon substrate are placed at the central rectangular through slot of pedestal 1
6, after briquetting 3 is placed on PZT element 5, flexible pressing plate 4 is fastened by bolts part 2 and nut fastener 7 is fixed on pedestal 1,
And compress briquetting 3.By adjusting the tightness of bolt fastener 2 and nut fastener 7, flexible pressing plate 4 is through briquetting 3 by pressure
It is uniformly applied on PZT element 5, to ensure that the uniformity of bonding pressure between 6 faying face of PZT element 5 and silicon substrate；
3) PZT element is bonded with the High temperature diffusion of silicon substrate
PZT element 5, silicon substrate 6 after compression is integrally placed in high temperature furnace together with bonding apparatus.Furnace temperature is by room temperature (20
DEG C) start, 800 DEG C are gradually heated to the heating rate of 25 DEG C/min, and keep the temperature 20min；Then, room temperature is cooled to the furnace.
Withdrawing device unloads lower flexible pressing plate 4 and briquetting 3, takes out the PZT element 5 and silicon substrate 6 being bonded；
4) reduction processing of PZT element
After completion PZT element 5 is bonded with the High temperature diffusion of silicon substrate 6, using mechanical lapping and polishing process, to PZT member
The PZT bulk part of part 5 carries out reduction processing, until PZT bulk thickness reaches about 200 μm, surface smoothness and roughness are divided
Do not reach 500nm and 300nm, completes the preparation of PZT piezoelectric layer.
The present invention proposes a kind of diffusion interlinked device of PZT/Si.Locate in advance firstly, carrying out surface with silicon substrate to PZT element
Reason.PZT element and silicon substrate to be bonded are placed on the base, hemispherical briquetting is placed on PZT element, pass through flexible pressing plate
Hemispherical briquetting is compressed, and then pressure is applied to PZT element and silicon substrate, pressure size can be adjusted by fastener.Flexibility pressure
Plate and hemispherical briquetting constitute single-point force modes, it is ensured that uniform stressed between PZT element and silicon substrate faying face；Then, will
The PZT element and silicon substrate of compression are integrally placed at held for some time in high temperature furnace together with bonding apparatus, make the lead member in PZT film
Element occurs diffusion reaction with silicon and forms diffusion interlinked layer, to realize the firm combination of PZT element/silicon；Finally, utilizing subsequent machine
Tool grinding and polishing process, obtain the PZT piezoelectric layer of required thickness.This device can guarantee bonding pressure between PZT element and silicon wafer
Uniformly, make PZT/Si diffusion interlinked sufficiently, improve bond strength and bonding quality, structure is simple in addition, this device has, is easy to
The advantages that operation.
Claims (3)
1. a kind of diffusion interlinked device of PZT/Si, which is characterized in that the diffusion interlinked device of the PZT/Si include pedestal (1),
Bolt fastener (2), briquetting (3), flexible pressing plate (4) and nut fastener (7)；It is machined at the center of the pedestal (1)
Rectangular straight slot, for placing PZT element to be bonded (5) and silicon substrate (6)；The briquetting (3) is placed in PZT member to be bonded
On part (5) and silicon substrate (6), for compressing PZT element to be bonded (5) and silicon substrate (6) in rectangular straight slot；Described scratches
Property pressing plate (4) be fastened by bolts part (2) and nut fastener (7) is fixed on pedestal (1), and compress and be placed in rectangular straight slot
Interior briquetting (3)；The PZT element (5) is made of PZT bulk, electrode and PZT film, and PZT film side is bonding face.
2. the diffusion interlinked device of PZT/Si according to claim 1, which is characterized in that guarantee that PZT element (5) and silicon serve as a contrast
Bonding pressure between bottom (6) faying face is uniform as far as possible, and the briquetting (3) is hemispherical, hemispherical briquetting (3) and flexible pressing plate
(4) single-point force modes are provided, by adjusting the tightness of bolt fastener (2) and nut fastener (7), flexible pressing plate
(4) pressure is uniformly applied on PZT element (5) through briquetting (3), to guarantee PZT element (5) and silicon substrate (6) faying face
Between bonding pressure uniformity.
3. the diffusion interlinked device of PZT/Si according to claim 1 or 2, which is characterized in that the pedestal (1) and briquetting
(3) it is process by aluminium oxide, zirconium oxide heat-resisting material；The bolt fastener (2), flexible pressing plate (4) and nut are tight
The material of firmware (7) is the stainless steel high temperature resistant of 310S, anti-oxidant, high-strength material.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202004013700U1 (en) * | 2004-09-01 | 2004-11-11 | Sitec Industrietechnologie Gmbh | Device for producing a cylindrical piezoelectric element with electrical leads, comprises a mold with plastic filling channels on a base and a top plug press |
| CN1921166A (en) * | 2005-08-23 | 2007-02-28 | 中国科学院声学研究所 | Method for making niobic magnesium acid lead-lead titanate single-crystal longitudinal vibration transverter |
| CN101232258A (en) * | 2008-01-11 | 2008-07-30 | 大连理工大学 | Packaging fixation structure equipment of piezoelectricity fold stack driver |
| CN102785384A (en) * | 2012-08-28 | 2012-11-21 | 深圳先进技术研究院 | Flattening device |
-
2017
- 2017-08-03 CN CN201710653811.5A patent/CN107611254B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202004013700U1 (en) * | 2004-09-01 | 2004-11-11 | Sitec Industrietechnologie Gmbh | Device for producing a cylindrical piezoelectric element with electrical leads, comprises a mold with plastic filling channels on a base and a top plug press |
| CN1921166A (en) * | 2005-08-23 | 2007-02-28 | 中国科学院声学研究所 | Method for making niobic magnesium acid lead-lead titanate single-crystal longitudinal vibration transverter |
| CN101232258A (en) * | 2008-01-11 | 2008-07-30 | 大连理工大学 | Packaging fixation structure equipment of piezoelectricity fold stack driver |
| CN102785384A (en) * | 2012-08-28 | 2012-11-21 | 深圳先进技术研究院 | Flattening device |
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