CN110323183A - A method of 3D NAND wafer thin slice sliver is solved the problems, such as using laser ring cutting - Google Patents
A method of 3D NAND wafer thin slice sliver is solved the problems, such as using laser ring cutting Download PDFInfo
- Publication number
- CN110323183A CN110323183A CN201910704935.0A CN201910704935A CN110323183A CN 110323183 A CN110323183 A CN 110323183A CN 201910704935 A CN201910704935 A CN 201910704935A CN 110323183 A CN110323183 A CN 110323183A
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- China
- Prior art keywords
- wafer
- cutting
- laser
- thin slice
- pad pasting
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The invention discloses a kind of method for solving the problems, such as 3D NAND wafer thin slice sliver using laser ring cutting, pad pasting: the pad pasting outside wafer covers whole wafer；Laser ring cutting: the storage unit of 3D NAND wafer, observing visible each wafer particle under high magnification microscope, there are many storage units that the protrusion of 7um or so is come, and the leftover pieces at edge are not because have storage unit, edge vacuum is caused to be drawn bad, it is easy protrusion, it is easy breakage when by external force, therefore is cut by laser using storage unit edge of the laser ring cutting to 3D NAND wafer；Thin slice+pad pasting: thin slice processing is carried out to the wafer after laser cutting, and carries out pad pasting operation herein；Scribing: after operating by P1-P3, the scribing processing of wafer is carried out.
Description
Technical field
The present invention relates to a kind of methods for solving the problems, such as 3D NAND wafer thin slice sliver using laser ring cutting.
Background technique
With the development of technology, the storage chip unit of flash memory has developed to 3D, the i.e. knot of storage unit by original 2D
Structure becomes stereochemical structure via original planar structure, this has also required corresponding packaging technology to need to upgrade more simultaneously
Newly, wherein thin slice station be Gonna breakthrough needed for 3D NAND package emphasis.
As shown in Figure 1, being 3D NAND memory cell structure figure, the technique for continuing to use present 2D is found after wafer thin slice,
There is breakage at edge, changes emery wheel, leaf membrane, and optimization machine parameter etc. does not all improve significantly, as shown in Fig. 2, being thin slice
Back edge breakage schematic diagram.
The prior art uses sDBG scheme: sDBG (Stealth Dicing Before Grinding) technique, mainly
It is to be carried out cutting to certain depth (reserving certain surplus) for wafer with laser, then carry out thin slice, then paste mill before thin slice,
Finally by spread sheet by wafer spread sheet, the cutting of chip and adhesive tape is completed, program technology is mature, but needs huge investment
Equipment.
Therefore a kind of low cost is found, the method that the wafer of rate of good quality rate cuts few sliver can effectively improve wafer production
Energy.
Summary of the invention
Aiming at the problem that background technique is previously mentioned, laser ring cutting is used the technical problem to be solved in the present invention is to provide a kind of
The method for solving the problems, such as 3D NAND wafer thin slice sliver, this method are realized using laser ring cutting scheme.
A kind of method solving the problems, such as 3D NAND wafer thin slice sliver using laser ring cutting of the invention, including walk as follows
It is rapid:
Pad pasting: the pad pasting outside wafer covers whole wafer；
Laser ring cutting: the storage unit of 3D NAND wafer is observed under high magnification microscope there are many visible each wafer particles
The storage unit that the protrusion of 7um or so is come, and the leftover pieces at edge cause edge vacuum to be drawn not because not having storage unit
It is good, be easy protrusion, be easy breakage when by external force, therefore using laser ring cutting to the storage unit edge of 3D NAND wafer into
Row laser cutting；
Thin slice+pad pasting: thin slice processing is carried out to the wafer after laser cutting, and carries out pad pasting operation herein；
Scribing: after operating by P1-P3, the scribing processing of wafer is carried out.
Preferably, the pad pasting of the crystal column surface is the one or more of PE or PVC material.
Preferably, the wafer pad pasting is puted up by wafer film sticking equipment, preferably pad pasting is blue film.
The laser ring cutting is cut by laser machine and cuts to 3D NAND wafer fixed-point implementation, and laser cutting machine connection can
Programmable controller and camera, in advance by inputting wafer radius size, setting in the graphic interface of programmable controller
Cutting parameter, including cutting outer diameter and cutting internal diameter control laser then by camera positional dissection outer diameter and cutting internal diameter
Cutting head navigates in cutting internal diameter, realizes and is cut along cutting internal diameter.
Camera positions the cutting outer diameter and cutting internal diameter of 3D NAND wafer by vision algorithm, cuts outer diameter and cutting
Cutting width is formed between internal diameter.
The invention has the advantages that
1. the present invention only needs to increase by one station of laser ring cutting, increase a kind of equipment.
2. laser ring cutting equipment is simple, domestic vendors can be completed equipment and have made to order, and expense is relatively low, it is only necessary to about 30W
RMB。
Detailed description of the invention
Detailed description will be given by the following detailed implementation and drawings by the present invention for ease of explanation,.
Fig. 1 is 3D NAND memory cell structure figure.
Fig. 2 is that thin slice back edge is damaged.
Fig. 3 is laser ring cutting schematic diagram.
Fig. 4 is laser ring cutting process flow chart.
Specific embodiment
A method of 3D NAND wafer thin slice sliver is solved the problems, such as using laser ring cutting, with reference to Fig. 3 and Fig. 4, including such as
Lower step:
S1: pad pasting: the pad pasting outside wafer covers whole wafer；
S2: laser ring cutting: the storage unit of 3D NAND wafer, observing visible each wafer particle under high magnification microscope has perhaps
The storage unit that the protrusion of more 7um or so is come, and the leftover pieces at edge cause edge vacuum to be drawn not because not having storage unit
It is good, be easy protrusion, be easy breakage when by external force, therefore using laser ring cutting to the storage unit edge of 3D NAND wafer into
Row laser cutting, as shown in figure 3, being cut by laser when cutting along between wafer outer diameter A and wafer internal diameter B；
S3: thin slice+pad pasting: thin slice processing is carried out to the wafer after laser cutting, and carries out pad pasting operation herein；
S4: scribing: after operating by P1-P3, the scribing processing of wafer is carried out.
Preferably, the pad pasting of the crystal column surface is the one or more of PE or PVC material.
Preferably, the wafer pad pasting is puted up by wafer film sticking equipment, preferably pad pasting is blue film.
The laser ring cutting is cut by laser machine and cuts to 3D NAND wafer fixed-point implementation, and laser cutting machine connection can
Programmable controller and camera, in advance by inputting wafer radius size, setting in the graphic interface of programmable controller
Cutting parameter, including cutting outer diameter A and cutting internal diameter B, then pass through camera positional dissection outer diameter A and cutting internal diameter B, control
Laser cutting head navigates in cutting internal diameter B, realizes and is cut along cutting internal diameter B.
Camera positions the cutting outer diameter A and cutting internal diameter B of 3D NAND wafer by vision algorithm, cuts outer diameter A and cuts
It cuts and forms cutting width between internal diameter B.
The above-described embodiments are merely illustrative of preferred embodiments of the present invention, not to structure of the invention
Think and range is defined.Without departing from the design concept of the invention, ordinary people in the field is to technology of the invention
The all variations and modifications that scheme is made, should all drop into protection scope of the present invention, the claimed technology contents of the present invention,
It is all described in the claims.
Claims (5)
1. a kind of method for solving the problems, such as 3D NAND wafer thin slice sliver using laser ring cutting, which is characterized in that including walking as follows
It is rapid:
Pad pasting: the pad pasting outside wafer covers whole wafer；
Laser ring cutting: the storage unit of 3D NAND wafer is observed under high magnification microscope there are many visible each wafer particles
The storage unit that the protrusion of 7um or so is come, and the leftover pieces at edge cause edge vacuum to be drawn not because not having storage unit
It is good, be easy protrusion, be easy breakage when by external force, therefore using laser ring cutting to the storage unit edge of 3D NAND wafer into
Row laser cutting；
Thin slice+pad pasting: thin slice processing is carried out to the wafer after laser cutting, and carries out pad pasting operation herein；
Scribing: after operating by P1-P3, the scribing processing of wafer is carried out.
2. a kind of method for solving the problems, such as 3D NAND wafer thin slice sliver using laser ring cutting according to claim 1,
Be characterized in that: the pad pasting of the crystal column surface is the one or more of PE or PVC material.
3. a kind of method for solving the problems, such as 3D NAND wafer thin slice sliver using laser ring cutting according to claim 1,
Be characterized in that: the wafer pad pasting is puted up by wafer film sticking equipment, and preferably pad pasting is blue film.
4. a kind of method for solving the problems, such as 3D NAND wafer thin slice sliver using laser ring cutting according to claim 1,
Be characterized in that: the laser ring cutting is cut by laser machine and cuts to 3D NAND wafer fixed-point implementation, and laser cutting machine connection can
Programmable controller and camera, in advance by inputting wafer radius size, setting in the graphic interface of programmable controller
Cutting parameter, including cutting outer diameter and cutting internal diameter control laser then by camera positional dissection outer diameter and cutting internal diameter
Cutting head navigates in cutting internal diameter, realizes and is cut along cutting internal diameter.
5. a kind of method for solving the problems, such as 3D NAND wafer thin slice sliver using laser ring cutting according to claim 4,
Be characterized in that: the camera by vision algorithm position 3D NAND wafer cutting outer diameter and cutting internal diameter, cutting outer diameter and
Cutting width is formed between cutting internal diameter.
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| CN201910704935.0A CN110323183A (en) | 2019-08-01 | 2019-08-01 | A method of 3D NAND wafer thin slice sliver is solved the problems, such as using laser ring cutting |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729178A (en) * | 2019-10-18 | 2020-01-24 | 记忆科技(深圳)有限公司 | Processing method of 3D wafer |
| CN112435987A (en) * | 2020-11-09 | 2021-03-02 | 太极半导体（苏州）有限公司 | Groove type positioning method for 3D wafer |
| WO2021208440A1 (en) * | 2020-04-16 | 2021-10-21 | 江苏京创先进电子科技有限公司 | Edge-removing machining method for wafer chip, and scribing machine using same |
| CN114643650A (en) * | 2022-03-11 | 2022-06-21 | 江苏京创先进电子科技有限公司 | Ring removing workbench for TAIKO wafer processing |
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| CN102157446A (en) * | 2009-12-04 | 2011-08-17 | 株式会社迪思科 | Method for processing wafer |
| DE102015208890A1 (en) * | 2014-05-13 | 2015-11-19 | Disco Corporation | Wafer processing method |
| CN107123588A (en) * | 2017-06-26 | 2017-09-01 | 镓特半导体科技（上海）有限公司 | A kind of gallium nitride wafer piece border processing method |
| JP2019054082A (en) * | 2017-09-14 | 2019-04-04 | 株式会社ディスコ | Wafer processing method |
| CN109954983A (en) * | 2017-12-25 | 2019-07-02 | 广州智信科技有限公司 | Automatic cutting method |
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Patent Citations (5)
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| CN102157446A (en) * | 2009-12-04 | 2011-08-17 | 株式会社迪思科 | Method for processing wafer |
| DE102015208890A1 (en) * | 2014-05-13 | 2015-11-19 | Disco Corporation | Wafer processing method |
| CN107123588A (en) * | 2017-06-26 | 2017-09-01 | 镓特半导体科技（上海）有限公司 | A kind of gallium nitride wafer piece border processing method |
| JP2019054082A (en) * | 2017-09-14 | 2019-04-04 | 株式会社ディスコ | Wafer processing method |
| CN109954983A (en) * | 2017-12-25 | 2019-07-02 | 广州智信科技有限公司 | Automatic cutting method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729178A (en) * | 2019-10-18 | 2020-01-24 | 记忆科技(深圳)有限公司 | Processing method of 3D wafer |
| WO2021208440A1 (en) * | 2020-04-16 | 2021-10-21 | 江苏京创先进电子科技有限公司 | Edge-removing machining method for wafer chip, and scribing machine using same |
| CN112435987A (en) * | 2020-11-09 | 2021-03-02 | 太极半导体（苏州）有限公司 | Groove type positioning method for 3D wafer |
| CN114643650A (en) * | 2022-03-11 | 2022-06-21 | 江苏京创先进电子科技有限公司 | Ring removing workbench for TAIKO wafer processing |
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Application publication date: 20191011 |