CN107706120A - The method for packing of ultra-thin wafers - Google Patents
The method for packing of ultra-thin wafers Download PDFInfo
- Publication number
- CN107706120A CN107706120A CN201710895810.1A CN201710895810A CN107706120A CN 107706120 A CN107706120 A CN 107706120A CN 201710895810 A CN201710895810 A CN 201710895810A CN 107706120 A CN107706120 A CN 107706120A
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- Prior art keywords
- ultra
- thin wafers
- cutter
- cut
- counterdie
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Abstract
The invention provides a kind of method for packing of ultra-thin wafers, the ultra-thin wafers are formed in one structure, including：Ultra-thin wafers body is more than the thickness of the ultra-thin wafers body with the ultra-thin wafers body week extrorse outer shroud, the thickness of the outer shroud is arranged at；The front of outer shroud is positive concordant with ultra-thin wafers body；The back side of outer shroud protrudes from the back side of ultra-thin wafers body；The method for packing of the ultra-thin wafers includes：Step of membrane sticking：Counterdie is pasted at the back side of the ultra-thin wafers, ultra-thin wafers body and outer shroud is bonded with counterdie；Cutting step：Outer shroud is cut off, is cut from the front of ultra-thin wafers body, to cut out several chips；Paster encapsulation step：The chip for cutting formation is separated from counterdie, and moves on lead frame and is packaged.
Description
Technical field
The present invention relates to field of semiconductor package, more particularly to a kind of method for packing of ultra-thin wafers.
Background technology
At present, ultra-thin wafers are increasingly widely applied, variable because its thickness is between 50 microns~100 microns
Shape, it is very big according to conventional package technique progress pad pasting, cutting and paster encapsulation difficulty, can be to ultra-thin in each process
Wafer causes different degrees of damage.
The content of the invention
In order to solve the above-mentioned technical problem, it is existing to solve the invention reside in a kind of method for packing of ultra-thin wafers of offer
It is different degrees of so as to occur causing the ultra-thin wafers because being difficult to using conventional packaging method to ultra-thin wafers in technology
The problems such as damage.
For above-mentioned technical problem, the present invention proposes a kind of method for packing of ultra-thin wafers, and the ultra-thin wafers are integrated
Molding structure, including：Ultra-thin wafers body and it is arranged at ultra-thin wafers body week extrorse outer shroud, the thickness of the outer shroud
Thickness of the degree more than the ultra-thin wafers body；The front of outer shroud is positive concordant with ultra-thin wafers body；The back side of outer shroud is convex
For the back side of ultra-thin wafers body；The method for packing of the ultra-thin wafers includes：Step of membrane sticking：At the back side of the ultra-thin wafers
Counterdie is pasted, ultra-thin wafers body and outer shroud is bonded with counterdie；Cutting step：Outer shroud is cut off, from ultra-thin wafers body just
Face is cut, to cut out several chips；Paster encapsulation step：The chip for cutting formation is separated from counterdie, and moved
It is packaged on to lead frame.
In a preferred approach, in the step of membrane sticking, ultra-thin wafers are placed in vacuum laminator, while preheating temperature
To 60 DEG C, and counterdie is affixed on under the atmospheric pressure conditions less than 50 millibars (mbar) back side of ultra-thin wafers, makes ultra-thin crystalline substance
Circle body and outer shroud are bonded with counterdie.
In a preferred approach, the counterdie is UV films.
In a preferred approach, in the step of excision outer shroud, using cutter along the ultra-thin wafers body and outer shroud
The position of connection carries out drawing round type cutting；Wherein, the particles of silicon carbide degree of the cutter is 8.0 microns ± 0.6 micron, the cutter
Rotating speed is 30,000 revs/min, and cutter is cut using move angle each second as 5 ° of speed.
In a preferred approach, in the cutting step, successively using the first cutter and the second cutter to ultra-thin wafers sheet
Body is cut：Cut into first with the first cutter perpendicular to the direction of ultra-thin wafers body, and ultra-thin wafers body is cut
Enter a desired depth；Then the second cutter is also perpendicular to ultra-thin wafers body, and the feeding side of the second cutter and the first cutter
To identical and continue to cut on the cut channel of the first cutter, until cutting off the ultra-thin wafers body and stopping in counterdie；Wherein,
The thickness of first cutter be more than the second cutter thickness so that the first cutter kerf width be more than the second cutter cut channel width,
The rotating speed of first cutter is 40,000 revs/min~50,000 revs/min (KRPM), the rotating speed of the second cutter for 18,000 revs/min~
25000 revs/min (KRPM).
In a preferred approach, the thickness of first cutter is 25 microns~30 microns, and the thickness of second cutter is
10 microns~15 microns；First cutter and the second cutter are made by diamond dust, the diamond dust contained by first cutter
Granularity is 3.0 microns ± 0.4 micron, and the particles of silicon carbide degree contained by second cutter is 2.0 microns ± 0.4 micron.
In a preferred approach, also include in the cutting step：The depth that first cutter is cut into is ultra-thin wafers body
The 25% of gross thickness, the depth that the second cutter cuts into counterdie are the 30% of counterdie gross thickness.
In a preferred approach, in the paster step, using the thimble of square matrix distribution from ultra-thin wafers body
The back side jacks up chip across counterdie, while is picked up chip from the front of ultra-thin wafers using suction nozzle, so that chip is the bottom of from
Separated in film.
In a preferred approach, the center at the center of square matrix distribution thimble, the center of chip and suction nozzle is at one
On straight line.
In a preferred approach, the suction nozzle includes an absorption end, and the size of its end face is less than the size of chip, the absorption end
End face centre position be provided with the recess of right-angled intersection, the center of the recess is vacuum sucking holes, and the absorption end of suction nozzle is towards ultra-thin
Wafer body front simultaneously makes the recess form vacuum chamber so as to which chip be picked up.
Compared with prior art, the invention has the advantages that：The method for packing of ultra-thin wafers of the present invention, is applied to
Ultra-thin wafers with outer shroud, because outer ring thickness is more than the thickness of ultra-thin wafers body, thin wafer body can be supported in outer shroud,
It is readily transported and the processing of pad pasting.In particular, in the back side elder generation pad pasting of ultra-thin wafers, then outer shroud cut off, avoids ultra-thin wafers
The problems such as yielding and difficult processing that body is brought because thickness is small, it is ensured that the processing efficiency of chip, improve yield rate.
Brief description of the drawings
Fig. 1 is the structural representation of the present embodiment ultra-thin wafers.
Fig. 2 is the cross-sectional view of the present embodiment ultra-thin wafers.
Fig. 3 is the step flow chart of the method for packing of the present embodiment ultra-thin wafers.
Fig. 4 is the detailed step flow chart of the method for packing of the present embodiment ultra-thin wafers.
Fig. 5 is the structural representation of the present embodiment thimble seat.
Fig. 6 is the present embodiment thimble in the distributed architecture schematic diagram of thimble seat.
Fig. 7 is the structural representation of the present embodiment suction nozzle end.
Fig. 8 is the structural representation of the present embodiment suction nozzle section.
Description of reference numerals is as follows：2nd, ultra-thin wafers；21st, ultra-thin wafers body；22nd, outer shroud；3rd, thimble seat；31st, thimble；
32nd, perforate；4th, suction nozzle；41st, end is adsorbed；411st, recess；412nd, vacuum sucking holes.
Embodiment
Embodying the exemplary embodiment of feature of present invention and advantage will describe in detail in the following description.It should be understood that
The present invention can have various changes in different embodiments, and it is neither departed from the scope of the present invention, and theory therein
Bright and diagram is treated as purposes of discussion in itself, and is not used to the limitation present invention.
Refering to Fig. 1 to Fig. 2, the method for packing for the ultra-thin wafers that the present embodiment provides, its be applied to thickness 50 microns~
100 microns of wafer.The ultra-thin wafers 2 of the thickness range include：Ultra-thin wafers body 21 and with its integrally formed outer shroud 22,
The outer shroud 22 is arranged at the circumferential outer rim of ultra-thin wafers body 21, and the thickness of outer shroud 22 is more than ultra-thin wafers body 21 with will be ultra-thin
Wafer body 21 is supported in outer shroud 22.The ultra-thin wafers 2 have front and back, wherein, the front of ultra-thin wafers 2 is plane
So that the outer shroud 22 in the face and the flush of ultra-thin wafers body 21；The back side of ultra-thin wafers 2 is that surrounding is high, middle low knot
Structure, so that outer shroud 22 protrudes from the surface of ultra-thin wafers body 21 in the face, so as to which outer shroud 22 and ultra-thin wafers body 21 connect
Position formed ledge structure.
With continued reference to Fig. 3 and Fig. 4, the method for packing of the present embodiment ultra-thin wafers includes successively：Step of membrane sticking, cutting step
With paster encapsulation step.
Step of membrane sticking S1 includes：Counterdie is pasted at the back side of ultra-thin wafers 2, makes ultra-thin wafers body 21 and outer shroud 22 and bottom
Film is bonded.
In this step, ultra-thin wafers 2 and UV films are placed in the workbench of vacuum laminator using UV films by counterdie
It is bonded.Due to the back side of ultra-thin wafers 2, the surface height of its outer shroud 22 and ultra-thin wafers body 21 differs, and makes both it
Junction has ledge structure, and the position easily causes compression ring during being bonded.In the present embodiment, first preheating temperature
To 60 DEG C, and UV films are affixed on under the atmospheric pressure conditions less than 50 millibars (mbar) back side of ultra-thin wafers 2, and made ultra-thin
Wafer body 21 and outer shroud 22 are bonded with UV films, under this condition, can ensure that the width of compression ring is less than 600 microns, the width
The outer rim of ultra-thin wafers body 21 is preferably sticked together with UV films when the compression ring of degree scope ensures to cut off outer shroud 22, so that
Reduced in subsequent cutting step the degree of chipping, prevent the outward flange of ultra-thin wafers body 21 because be bonded with UV films it is poor cause
Infiltration and the problem of siliconising powder, meanwhile, reduce ultra-thin wafers body 21 and be cut into after chip from the difficulty of UV UF membranes.
Cutting step S2 includes：Outer shroud 22 is cut off, is cut from the front of ultra-thin wafers body 21, it is some to cut out
Individual chip.
Specifically, this step includes two sub-steps of front and rear progress：1) step S21, outer shroud 22, and 2) step are cut off
Rapid S22, cuts out chip.
In the step s 21, the cutting ring of cutting for setting particles of silicon carbide degree to be 8.0 microns ± 0.6 micron on cutter device has,
And calibrated in the front of ultra-thin wafers 2 on the basis of the center of circle of ultra-thin wafers 2 to cutting cutting ring tool, to reduce in subsequent step
In cut inclined problem.Afterwards, cut using cutting cutting ring tool and carry out drawing a round type along the position that ultra-thin wafers body 21 and outer shroud 22 connect
Cut；Wherein, during ring is cut, the rotating speed for cutting cutting ring tool is 30,000 revs/min, cuts cutting ring tool using move angle each second as 5 °
Speed cut, ensure to cut the breakage of cutting ring tool under this condition in cutting process, while prevent ultra-thin wafers body
The rupture at 21 edges.
Diced chip in step S22 is carried out using the knife of double-pole two cut-out cutting method.In the first main shaft of cutter device
With the first cutter and the second cutter are installed respectively on the second main shaft, the first main shaft and the second main shaft are separated by certain spacing so that
With the feeding of feed arrangement, the first cutter and the second cutter are cut with time order and function to same cut channel position in the same direction
Cut.
Specifically, ultra-thin wafers body 21 is cut using the first cutter and the second cutter successively for same position
Cut：First, ultra-thin wafers body 21 is cut into using rotating speed for first cutter of 40,000 revs/min~50,000 revs/min (KRPM)
One desired depth, wherein, the first cutter is cut into perpendicular to ultra-thin wafers body 21 along Cutting Road；Then, the second cutter is same
Sample is perpendicular to ultra-thin wafers body 21, and the second cutter is identical with the direction of feed of the first cutter and on the cut channel of the first cutter
Continue to cut into, the second cutter is cut into the 18000 revs/min~rotating speed of 25,000 revs/min (KRPM), until cutting off the ultra-thin crystalline substance
Circle body 21 is simultaneously stopped in counterdie.Wherein, the first cutter and the second cutter are made by diamond dust, the gold contained by the first cutter
Emery granularity is 3.0 microns ± 0.4 micron, and the particles of silicon carbide degree contained by the second cutter is 2.0 microns ± 0.4 micron.Enter
One step, the thickness of the first cutter is 25 microns~30 microns, and the thickness of the second cutter is 10 microns~15 microns, so that first
The thickness of cutter is more than the thickness of the second cutter so that the kerf width of the first cutter is more than the width of the second cutter cut channel.
It should be noted that when the first cutter and the second cutter are cut to the same position of ultra-thin wafers body 21, the
The tool marks of two cutters are located at the centre of the first cutter tool marks width, the i.e. axis of the first cutter tool marks and the second cutter tool marks
Axis it is overlapping.
More preferably, in step s 2, on ultra-thin wafers body 21 before diced chip, also using high-precision control
System first measures the thickness of ultra-thin wafers body 21 and counterdie, so that the depth that the first cutter is cut into is total for ultra-thin wafers body 21
The 25% of thickness, the depth that the second cutter cuts into counterdie are the 30% of counterdie gross thickness.
Paster encapsulation step S3 includes：The chip for cutting formation is separated from counterdie, and moves on lead frame and carries out
Encapsulation.
With continued reference to Fig. 5 to Fig. 8, during chip separates from counterdie, the thimble 31 of square matrix distribution is utilized
Chip is jacked up across counterdie from the back side of ultra-thin wafers body 21, while utilizes suction nozzle 4 from the front of ultra-thin wafers body 21
Chip is picked up, so that chip separates from counterdie.
Specifically, the thimble 31 of square matrix distribution is arranged on square thimble seat 3, the tip of every thimble 31 it is straight
Footpath is 0.3 millimeter.The thimble seat 3 is located at the side at the back side of ultra-thin wafers body 21, and thimble seat 3 is carried on the back towards ultra-thin wafers body 21
The end face in face is provided with multiple perforation 32, and thimble 31 is protruding with towards ultra-thin crystalline substance from the inside of thimble seat 3 along the perforation 32
Circle body 21 back side jacks up chip.It should be noted that multiple perforation 32 are distributed as square matrix distribution on thimble seat 3,
And in actual use, the quantity of thimble 31 stretched out is adjusted according to the size of chip and thickness, and the multiple thimbles stretched out are also
Square matrix is distributed.
Suction nozzle 4 is located at 21 positive side of ultra-thin wafers body, and the suction nozzle 4 includes absorption end 41, the end face of absorption end 41
Size be less than chip size, wherein, absorption the end face centre position of end 41 be provided with right-angled intersection recess 411, the recess 411
Center there are vacuum sucking holes 412, the absorption end 41 of suction nozzle 4 towards the front of ultra-thin wafers body 21 and forms recess 411
For vacuum chamber so as to which chip be picked up, the vacuum chamber of right-angled intersection make it that dynamics evenly, is reduced to chip when suction nozzle 4 adsorbs chip
Damage.
It should be noted that size and the size at absorption end 41 that the multiple thimbles 31 for acting on chip are distributed are respectively less than core
The size of piece；Meanwhile the center at the center of square matrix distribution thimble, the center of chip and suction nozzle 4 is point-blank,
And act on chip multiple thimbles 31 be distributed one group of relative outward flange, adsorb end 41 one group of relative outward flange with
Two sides of chip along its length are parallel.Needing to particularly point out is, the center of the square matrix distribution thimble is to act on core
The center that multiple thimbles of piece are distributed.
More preferably, adsorb end 41 perpendicular to Chip-wide direction an edge lengths compared with Chip-wide small 5mil~
10mil.When chip separates from counterdie, thimble 31 and suction nozzle 4 act on chip simultaneously.
Using the thimble of the more traditional circular distribution of square matrix distribution thimble 31 in this step S3, the arrangement of thimble 31 is more
Add uniform close, being jacked up chip makes to be more uniformly stressed, and avoids the rupture of chip.More preferably, the present embodiment suction nozzle 4
Absorption end 41 be made of soft material, it is smaller compared to conventional suction nozzle hardness, to chip when reducing suction nozzle 3 because of contact chip
Damage.
In step s3, chip first carries out bonding wire after moving on lead frame, with by bonding wire by chip and lead frame
Pin welding on frame.And then by plastic packaging, solidification, deburring, rib cutting separation, pin plating, test mark and pack out
Goods, to complete ultra-thin wafers encapsulation, see Fig. 4.The concrete operations of bonding wire, plastic packaging and each operation afterwards refer to prior art,
The present invention is no longer specific to be introduced.
The method for packing of ultra-thin wafers of the present invention, suitable for the ultra-thin wafers with outer shroud, because outer ring thickness is more than ultra-thin crystalline substance
The thickness of circle body, thin wafer body can be supported in outer shroud, be readily transported and the processing of pad pasting.In particular, in ultra-thin crystalline substance
Round back side elder generation pad pasting, then outer shroud is cut off, avoid yielding and difficult processing that ultra-thin wafers body brings because thickness is small etc.
Problem, it is ensured that the processing efficiency of chip, improve yield rate.
Although describing the present invention with reference to above exemplary embodiment, it is to be understood that, term used be explanation and
Exemplary and nonrestrictive term.Due to the present invention can be embodied in a variety of forms without departing from invention spirit or
Essence, it should therefore be appreciated that above-mentioned embodiment is not limited to any foregoing details, and should be limited in appended claims
Widely explained in spirit and scope, thus the whole changes fallen into claim or its equivalent scope and remodeling all should be with
Attached claim is covered.
Claims (10)
- A kind of 1. method for packing of ultra-thin wafers, it is characterised in that the ultra-thin wafers are formed in one structure, including：It is ultra-thin Wafer body is more than the ultra-thin wafers with the ultra-thin wafers body week extrorse outer shroud, the thickness of the outer shroud is arranged at The thickness of body；The front of outer shroud is positive concordant with ultra-thin wafers body；The back side of outer shroud protrudes from ultra-thin wafers body The back side；The method for packing of the ultra-thin wafers includes：Step of membrane sticking：Counterdie is pasted at the back side of the ultra-thin wafers, ultra-thin wafers body and outer shroud is bonded with counterdie；Cutting step：Outer shroud is cut off, is cut from the front of ultra-thin wafers body, to cut out several chips；Paster encapsulation step：The chip for cutting formation is separated from counterdie, and moves on lead frame and is packaged.
- 2. the method for packing of ultra-thin wafers as claimed in claim 1, it is characterised in that, will be ultra-thin in the step of membrane sticking Wafer is placed in vacuum laminator, while preheating temperature is to 60 DEG C, and under the atmospheric pressure conditions less than 50 millibars (mbar) Counterdie is affixed on to the back side of ultra-thin wafers, ultra-thin wafers body and outer shroud is bonded with counterdie.
- 3. the method for packing of ultra-thin wafers as claimed in claim 2, it is characterised in that the counterdie is UV films.
- 4. the method for packing of ultra-thin wafers as claimed in claim 1, it is characterised in that in the step of excision outer shroud, Using cutter a stroke round type cutting is carried out along the position that the ultra-thin wafers body connects with outer shroud；Wherein, the particles of silicon carbide degree of the cutter is 8.0 microns ± 0.6 micron, and the rotating speed of the cutter is 30,000 revs/min, knife Tool is cut using move angle each second as 5 ° of speed.
- 5. the method for packing of ultra-thin wafers as claimed in claim 1, it is characterised in that sharp successively in the cutting step Ultra-thin wafers body is cut with the first cutter and the second cutter：First with the first cutter perpendicular to ultra-thin wafers body Direction is cut into, and cuts into a desired depth to ultra-thin wafers body；Then the second cutter is also perpendicular to ultra-thin wafers sheet Body, and the second cutter is identical with the direction of feed of the first cutter and continues to cut on the cut channel of the first cutter, until cut-out should Ultra-thin wafers body is simultaneously stopped in counterdie；Wherein,The thickness of first cutter is more than the thickness of the second cutter so that the kerf width of the first cutter is more than the second cutter cut channel Width, the rotating speed of the first cutter is 40,000 revs/min~50,000 revs/min (KRPM), and the rotating speed of the second cutter is 18,000 revs/min Clock~25,000 rev/min (KRPM).
- 6. the method for packing of ultra-thin wafers as claimed in claim 5, it is characterised in that the thickness of first cutter is 25 micro- Rice~30 microns, the thickness of second cutter is 10 microns~15 microns；First cutter and the second cutter are made by diamond dust, and the particles of silicon carbide degree contained by first cutter is 3.0 ± 0.4 micron of micron, the particles of silicon carbide degree contained by second cutter are 2.0 microns ± 0.4 micron.
- 7. the method for packing of ultra-thin wafers as claimed in claim 5, it is characterised in that also include in the cutting step： The depth that first cutter is cut into is the 25% of ultra-thin wafers body gross thickness, and the depth that the second cutter cuts into counterdie is counterdie total thickness The 30% of degree.
- 8. the method for packing of ultra-thin wafers as claimed in claim 1, it is characterised in that in the paster step, utilize side The thimble of shape matrix distribution jacks up chip across counterdie from the back side of ultra-thin wafers body, while utilizes suction nozzle from ultra-thin wafers Front chip is picked up so that chip separates from counterdie.
- 9. the method for packing of ultra-thin wafers as claimed in claim 8, it is characterised in that the center of square matrix distribution thimble, The center of chip and the center of suction nozzle are point-blank.
- 10. the method for packing of ultra-thin wafers as claimed in claim 8, it is characterised in that the suction nozzle includes an absorption end, its The size of end face is less than the size of chip, and the end face centre position at the absorption end is provided with the recess of right-angled intersection, in the recess The heart is vacuum sucking holes, and the absorption end of suction nozzle towards ultra-thin wafers body front and makes the recess form vacuum chamber so as to which chip be inhaled Rise.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710895810.1A CN107706120B (en) | 2017-09-28 | 2017-09-28 | The packaging method of ultra-thin wafers |
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| CN201710895810.1A CN107706120B (en) | 2017-09-28 | 2017-09-28 | The packaging method of ultra-thin wafers |
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| CN107706120A true CN107706120A (en) | 2018-02-16 |
| CN107706120B CN107706120B (en) | 2019-10-22 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109103141A (en) * | 2018-07-14 | 2018-12-28 | 全讯射频科技(无锡)有限公司 | A kind of the cutting protection technique and protection structure of surface-sensitive wafer |
| CN111017626A (en) * | 2019-12-23 | 2020-04-17 | 青岛歌尔微电子研究院有限公司 | Film sticking device and film sticking method |
| CN111070448A (en) * | 2019-12-30 | 2020-04-28 | 成都先进功率半导体股份有限公司 | Wafer ring cutting method |
| CN111799186A (en) * | 2020-07-15 | 2020-10-20 | 芯盟科技有限公司 | Method for bonding chip to wafer and wafer with chip |
| CN112975148A (en) * | 2021-02-07 | 2021-06-18 | 苏州镭明激光科技有限公司 | Wafer laser invisible cutting equipment and cutting method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103515250A (en) * | 2013-09-10 | 2014-01-15 | 天水华天科技股份有限公司 | Production method of 75-micron ultrathin chips |
| CN103515316A (en) * | 2013-09-10 | 2014-01-15 | 天水华天科技股份有限公司 | Production method of 50-micron ultrathin chips |
| CN104124176A (en) * | 2013-04-24 | 2014-10-29 | 万国半导体股份有限公司 | Method for preparation of semiconductor device used in flip installing process |
| CN105428220A (en) * | 2015-12-22 | 2016-03-23 | 上海华虹宏力半导体制造有限公司 | Annular cutting process method of Taiko thinning process |
| CN106800272A (en) * | 2017-02-17 | 2017-06-06 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer cutting and wafer scale release and method of testing |
-
2017
- 2017-09-28 CN CN201710895810.1A patent/CN107706120B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124176A (en) * | 2013-04-24 | 2014-10-29 | 万国半导体股份有限公司 | Method for preparation of semiconductor device used in flip installing process |
| CN103515250A (en) * | 2013-09-10 | 2014-01-15 | 天水华天科技股份有限公司 | Production method of 75-micron ultrathin chips |
| CN103515316A (en) * | 2013-09-10 | 2014-01-15 | 天水华天科技股份有限公司 | Production method of 50-micron ultrathin chips |
| CN105428220A (en) * | 2015-12-22 | 2016-03-23 | 上海华虹宏力半导体制造有限公司 | Annular cutting process method of Taiko thinning process |
| CN106800272A (en) * | 2017-02-17 | 2017-06-06 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer cutting and wafer scale release and method of testing |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109103141A (en) * | 2018-07-14 | 2018-12-28 | 全讯射频科技(无锡)有限公司 | A kind of the cutting protection technique and protection structure of surface-sensitive wafer |
| CN111017626A (en) * | 2019-12-23 | 2020-04-17 | 青岛歌尔微电子研究院有限公司 | Film sticking device and film sticking method |
| CN111017626B (en) * | 2019-12-23 | 2021-09-03 | 青岛歌尔微电子研究院有限公司 | Film sticking device and film sticking method |
| CN111070448A (en) * | 2019-12-30 | 2020-04-28 | 成都先进功率半导体股份有限公司 | Wafer ring cutting method |
| CN111799186A (en) * | 2020-07-15 | 2020-10-20 | 芯盟科技有限公司 | Method for bonding chip to wafer and wafer with chip |
| CN112975148A (en) * | 2021-02-07 | 2021-06-18 | 苏州镭明激光科技有限公司 | Wafer laser invisible cutting equipment and cutting method |
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| Publication number | Publication date |
|---|---|
| CN107706120B (en) | 2019-10-22 |
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