CN109103141A - A kind of the cutting protection technique and protection structure of surface-sensitive wafer - Google Patents
A kind of the cutting protection technique and protection structure of surface-sensitive wafer Download PDFInfo
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- CN109103141A CN109103141A CN201810772935.XA CN201810772935A CN109103141A CN 109103141 A CN109103141 A CN 109103141A CN 201810772935 A CN201810772935 A CN 201810772935A CN 109103141 A CN109103141 A CN 109103141A
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- wafer
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- photoresist
- chip
- plastic hoop
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention provides a kind of cutting protection techniques of surface-sensitive wafer; it can protect crystal column surface to prevent plowing from the cutting action of wafer; improve product yield; reduce quality risk and bad retirement rate, comprising the following steps: the plastic hoop that size and wafer are adapted is attached on Non-UV film；By being face-up mounted on the inside of plastic hoop for wafer, the back side of wafer contacts fitting with Non-UV film;Photoresist is coated on the front of the wafer obtained in step 2 by equal glue cleaning machine；Wafer obtained in step 3 is put into baking oven and is dried, the photoetching adhesive curing coated in wafer frontside is made；The wafer that step 4 is obtained is cut, and completes the separation between the chip on wafer；The chip that step 5 is obtained, which is placed under ultraviolet lamp environment, to expose, and places into after exposure in spin coating cleaning machine and is cleaned using cleaning agent to chip, remove photoresist, while additionally providing a kind of protection structure of surface-sensitive wafer.
Description
Technical field
The present invention relates to semiconductor crystal wafer cutting technique, the cutting of specially a kind of surface-sensitive wafer protection technique and
Protect structure.
Background technique
Bigger water flow is needed to cool down in cutting surfaces sensitivity wafer using blade cutting technique in the prior art
Blade.While water flow takes away heat, the diamond particles fallen on the clast and blade of cutting can be taken away.However containing broken
The water impact of bits and particle on the wafer surface, is also easy to produce the subtle scuffing in surface, this scratch is for surface-sensitive component
The main performance of product will directly be will affect.Since water flow rinses the randomness for causing to scratch, these scratch defect on wafer
Distribution be also it is uncertain, need the inefficiency that can be just found under high power lens, however check under high power lens, it is serious to drop
Low production efficiency.If
Normally then to arrive a last process in stream could find scratch whether influence chip performance, cause Related product yield low
Under, quality risk is high, and bad retirement rate is high.
Summary of the invention
Aiming at the problem that can not protect crystal column surface in the cutting action of surface-sensitive wafer in the prior art, this hair
It is bright to provide a kind of cutting protection technique of surface-sensitive wafer, crystal column surface can be protected to keep away in the cutting action of wafer
Exempt to scratch, improve product yield, reduce quality risk and bad retirement rate, while additionally providing a kind of surface-sensitive wafer
Protect structure.
Its technical solution is such that a kind of cutting protection technique of surface-sensitive wafer, which is characterized in that including following
Step:
Step 1: the plastic hoop that size and wafer are adapted is attached on Non-UV film；
Step 2: by being face-up mounted on the inside of plastic hoop for wafer, the back side of wafer contacts fitting with Non-UV film;
Step 3: coating photoresist on the front of the wafer obtained in step 2 by equal glue cleaning machine；
Step 4: wafer obtained in step 3 being put into baking oven and is dried, the photoetching adhesive curing coated in wafer frontside is made；
Step 5: the wafer that step 4 is obtained is cut, and completes the separation between the chip on wafer；
Step 6: the chip that step 5 is obtained, which is placed under ultraviolet lamp environment, to expose, and places into spin coating cleaning machine and uses after exposure
Cleaning agent cleans chip, removes photoresist.
Further, in step 1, by roller pressure plastic hoop and Non-UV membrane pressure are closed, roller pressure is logical
Cross pressure control, air pressure range are as follows: 0.2Mpa ~ 0.5Mpa.
Further, in step 2, the platform revolving speed of equal glue cleaning machine is 10000 rev/min ~ 45000 rpms
Clock, the photoresist dosage that every wafer uses are 1ml ~ 4ml, and the bondline thickness of formation is 1 μm ~ 20 μm.
Further, in step 4, the baking temperature of baking oven is at 40 DEG C ~ 130 DEG C, baking time 20min-40min.
Further, in step 6, the time for exposure is 10min ~ 25min.
Further, in step 6, the platform revolving speed of equal glue cleaning machine is 1000 rev/min ~ 5000 rev/min,
The cleaning solution used is that isopropanol and deionized water combination are cleaned.
A kind of protection structure of surface-sensitive wafer, it is characterised in that: the Non-UV film layer including being covered in backside of wafer,
The outside of the Non-UV film layer is equipped with plastic hoop, and the plastic hoop is mounted in the Non-UV film layer, and the front of wafer applies
It is covered with photoresist layer.
After the cutting protection technique and protection structure of surface-sensitive wafer of the invention, when cutting crystal wafer, wafer
Front is covered with photoresist, and the back side of wafer is covered with the Non-UV film with plastic hoop, and crystalline substance can be protected in cutting technique
Round surface avoids the water impact containing clast and particle from generating scuffing on the wafer surface, removes after cutting technique brilliant
The positive photoresist of piece, photoresist are soluble in organic matter, crystal column surface can be cleaned completely and be done, and photoresist removing facilitates thorough
Bottom will not influence the production and use of postorder chip, and back surface of the wafer remains into finishing operations with the Non-UV film of plastic hoop, can
It is fixed and carrying chip left back to play, booster action is played in the pickup process of postorder chip.
Detailed description of the invention
Fig. 1 is the flow diagram of the cutting protection technique of surface-sensitive wafer of the invention.
Specific embodiment
See Fig. 1, a kind of protection structure of surface-sensitive wafer of the invention, it is characterised in that: carry on the back including being covered in wafer 1
The outside of the Non-UV film layer 3 in face, Non-UV film layer 3 is equipped with plastic hoop 2, and plastic hoop 2 is mounted in Non-UV film layer 3, wafer 1
Front surface coated have photoresist layer 4.
Embodiment 1:
See Fig. 1, a kind of cutting protection technique of surface-sensitive wafer of the invention, comprising the following steps:
Step 1: the plastic hoop 2 that size and wafer 1 are adapted being attached on Non-UV film 3, to mould by roller pressure
Expect that ring and Non-UV membrane pressure close, roller pressure passes through pressure control, air pressure range are as follows: 0.2Mpa；
Step 2: wafer 1 is face-up mounted on 2 inside of plastic hoop, the back side of wafer 1 contacts fitting with Non-UV film 3,
The platform revolving speed of equal glue cleaning machine is 10000 rev/min, and the photoresist dosage that every wafer uses is 1ml, the glue-line of formation
With a thickness of 1 μm；
Step 3: photoresist is coated on the front of the wafer obtained in step 2 by equal glue cleaning machine, photoresist crosses admittance pipe
It drips on the crystal column surface rotated, under the action of high speed rotation power, photoresist is coated uniformly on crystal column surface；
Step 4: wafer obtained in step 3 being put into baking oven and is dried, the photoetching adhesive curing coated in wafer frontside, baking oven are made
Baking temperature at 40 DEG C, baking time 40min；
Step 5: the wafer that step 4 is obtained is cut by diamond blade, completes the separation between the chip on wafer；
Step 6: the chip that step 5 is obtained, which is placed under ultraviolet lamp environment, to expose, and time for exposure 10min is placed into after exposure
Chip is cleaned using cleaning agent in spin coating cleaning machine, removes photoresist, the platform revolving speed of equal glue cleaning machine is 1000
Rev/min, the cleaning solution used are that isopropanol and deionized water combination are cleaned.
Embodiment 2:
A kind of cutting protection technique of surface-sensitive wafer of the invention, comprising the following steps:
Step 1: the plastic hoop 2 that size and wafer 1 are adapted being attached on Non-UV film 3, to mould by roller pressure
Expect that ring and Non-UV membrane pressure close, roller pressure passes through pressure control, air pressure range are as follows: 0.5Mpa；
Step 2: wafer 1 is face-up mounted on 2 inside of plastic hoop, the back side of wafer 1 contacts fitting with Non-UV film 3,
The platform revolving speed of equal glue cleaning machine is 45000 rev/min, and the photoresist dosage that every wafer uses is 4ml, the glue-line of formation
With a thickness of 20 μm；
Step 3: photoresist is coated on the front of the wafer obtained in step 2 by equal glue cleaning machine, photoresist crosses admittance pipe
It drips on the crystal column surface rotated, under the action of high speed rotation power, photoresist is coated uniformly on crystal column surface；
Step 4: wafer obtained in step 3 being put into baking oven and is dried, the photoetching adhesive curing coated in wafer frontside, baking oven are made
Baking temperature at 130 DEG C, baking time 20min；
Step 5: the wafer that step 4 is obtained is cut by diamond blade, completes the separation between the chip on wafer；
Step 6: the chip that step 5 is obtained, which is placed under ultraviolet lamp environment, to expose, and time for exposure 25min is placed into after exposure
Chip is cleaned using cleaning agent in spin coating cleaning machine, removes photoresist, the platform revolving speed of equal glue cleaning machine is 5000
Rev/min, the cleaning solution used are that isopropanol and deionized water combination are cleaned.
Embodiment 3:
A kind of cutting protection technique of surface-sensitive wafer of the invention, comprising the following steps:
Step 1: the plastic hoop 2 that size and wafer 1 are adapted being attached on Non-UV film 3, to mould by roller pressure
Expect that ring and Non-UV membrane pressure close, roller pressure passes through pressure control, air pressure range are as follows: 0.3Mpa；
Step 2: wafer 1 is face-up mounted on 2 inside of plastic hoop, the back side of wafer 1 contacts fitting with Non-UV film 3,
The platform revolving speed of equal glue cleaning machine is 45000 rev/min, and the photoresist dosage that every wafer uses is 2ml, the glue-line of formation
With a thickness of 10 μm；
Step 3: photoresist is coated on the front of the wafer obtained in step 2 by equal glue cleaning machine, photoresist crosses admittance pipe
It drips on the crystal column surface rotated, under the action of high speed rotation power, photoresist is coated uniformly on crystal column surface；
Step 4: wafer obtained in step 3 being put into baking oven and is dried, the photoetching adhesive curing coated in wafer frontside, baking oven are made
Baking temperature at 90 DEG C, baking time 30min；
Step 5: the wafer that step 4 is obtained is cut by diamond blade, completes the separation between the chip on wafer；
Step 6: the chip that step 5 is obtained, which is placed under ultraviolet lamp environment, to expose, and time for exposure 20min is placed into after exposure
Chip is cleaned using cleaning agent in spin coating cleaning machine, removes photoresist, the platform revolving speed of equal glue cleaning machine is 3000
Rev/min, the cleaning solution used are that isopropanol and deionized water combination are cleaned.
After the cutting protection technique and protection structure of surface-sensitive wafer of the invention, when cutting crystal wafer, wafer
Front is covered with photoresist, and the back side of wafer is covered with the Non-UV film with plastic hoop, and crystalline substance can be protected in cutting technique
Round surface avoids the water impact containing clast and particle from generating scuffing on the wafer surface, removes after cutting technique brilliant
The positive photoresist of piece, photoresist are soluble in organic matter, crystal column surface can be cleaned completely and be done, and photoresist removing facilitates thorough
Bottom will not influence the production and use of postorder chip, and back surface of the wafer remains into finishing operations with the Non-UV film of plastic hoop, can
It is fixed and carrying chip left back to play, booster action is played in the pickup process of postorder chip, is completed after picking up, plastics
Ring can be recycled, and Non-UV film is scrapped；The cutting protection technique of surface-sensitive wafer of the invention, and it is suitable for non-Huang
The production area of light.
Above embodiments only express wherein several embodiments of the invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (7)
1. a kind of cutting protection technique of surface-sensitive wafer, which comprises the following steps:
Step 1: the plastic hoop that size and wafer are adapted is attached on Non-UV film；
Step 2: by being face-up mounted on the inside of plastic hoop for wafer, the back side of wafer contacts fitting with Non-UV film；
Step 3: coating photoresist on the front of the wafer obtained in step 2 by equal glue cleaning machine；
Step 4: wafer obtained in step 3 being put into baking oven and is dried, the photoetching adhesive curing coated in wafer frontside is made；
Step 5: the wafer that step 4 is obtained is cut, and completes the separation between the chip on wafer；
Step 6: the chip that step 5 is obtained, which is placed under ultraviolet lamp environment, to expose, and places into spin coating cleaning machine and uses after exposure
Cleaning agent cleans chip, removes photoresist.
2. a kind of cutting protection technique of surface-sensitive wafer according to claim 1, it is characterised in that: in step 1,
By roller pressure plastic hoop and Non-UV membrane pressure are closed, pressure is by pressure control, air pressure range are as follows:
0.2Mpa ~0.5Mpa。
3. a kind of cutting protection technique of surface-sensitive wafer according to claim 1, it is characterised in that: in step 2,
The platform revolving speed of equal glue cleaning machine is 10000 rev/min ~ 45000 rev/min, the photoresist dosage that every wafer uses
For 1ml ~ 4ml, the bondline thickness of formation is 1 μm ~ 20 μm.
4. a kind of cutting protection technique of surface-sensitive wafer according to claim 1, it is characterised in that: in step 4,
The baking temperature of baking oven is at 40 ~ 130 °C, baking time 20min-40min.
5. a kind of cutting protection technique of surface-sensitive wafer according to claim 1, it is characterised in that: in step 6,
Time for exposure is 10min ~ 25min.
6. a kind of cutting protection technique of surface-sensitive wafer according to claim 1, it is characterised in that: in step 6,
The platform revolving speed of equal glue cleaning machine is 1000 rev/min ~ 5000 rev/min, the cleaning solution used be isopropanol and go from
Sub- water combination is cleaned.
7. a kind of protection structure of surface-sensitive wafer, it is characterised in that: the Non-UV film layer including being covered in backside of wafer, institute
The outside for stating Non-UV film layer is equipped with plastic hoop, and the plastic hoop is mounted in the Non-UV film layer, the front surface coated of wafer
There is photoresist layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810772935.XA CN109103141A (en) | 2018-07-14 | 2018-07-14 | A kind of the cutting protection technique and protection structure of surface-sensitive wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810772935.XA CN109103141A (en) | 2018-07-14 | 2018-07-14 | A kind of the cutting protection technique and protection structure of surface-sensitive wafer |
Publications (1)
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| CN109103141A true CN109103141A (en) | 2018-12-28 |
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| CN201810772935.XA Pending CN109103141A (en) | 2018-07-14 | 2018-07-14 | A kind of the cutting protection technique and protection structure of surface-sensitive wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113285352A (en) * | 2021-07-23 | 2021-08-20 | 华芯半导体研究院(北京)有限公司 | Vertical cavity surface emitting laser with sorting protection structure |
| CN113871348A (en) * | 2021-09-27 | 2021-12-31 | 东莞市译码半导体有限公司 | Novel laser cutting process technology |
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| GB0106575D0 (en) * | 1996-07-22 | 2001-05-09 | Kla Instr Corp | Broad spectrum ultraviolet catadioptric imaging system |
| CN104192791A (en) * | 2014-09-15 | 2014-12-10 | 华东光电集成器件研究所 | Cutting method for MEMS (Micro-electromechanical Systems) wafer |
| CN105931956A (en) * | 2015-02-27 | 2016-09-07 | 株式会社迪思科 | Wafer dividing method |
| CN106653690A (en) * | 2017-03-03 | 2017-05-10 | 成都中宇微芯科技有限公司 | Multi-dimension chip cutting technology |
| CN106800272A (en) * | 2017-02-17 | 2017-06-06 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer cutting and wafer scale release and method of testing |
| CN106816412A (en) * | 2017-01-19 | 2017-06-09 | 吉林麦吉柯半导体有限公司 | The cutting technique of wafer and the production method of wafer |
| US20170358537A1 (en) * | 2016-06-14 | 2017-12-14 | Freescale Semiconductor, Inc. | Method of wafer dicing for backside metallization |
| CN107706120A (en) * | 2017-09-28 | 2018-02-16 | 深圳赛意法微电子有限公司 | The method for packing of ultra-thin wafers |
-
2018
- 2018-07-14 CN CN201810772935.XA patent/CN109103141A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0106575D0 (en) * | 1996-07-22 | 2001-05-09 | Kla Instr Corp | Broad spectrum ultraviolet catadioptric imaging system |
| CN104192791A (en) * | 2014-09-15 | 2014-12-10 | 华东光电集成器件研究所 | Cutting method for MEMS (Micro-electromechanical Systems) wafer |
| CN105931956A (en) * | 2015-02-27 | 2016-09-07 | 株式会社迪思科 | Wafer dividing method |
| US20170358537A1 (en) * | 2016-06-14 | 2017-12-14 | Freescale Semiconductor, Inc. | Method of wafer dicing for backside metallization |
| CN106816412A (en) * | 2017-01-19 | 2017-06-09 | 吉林麦吉柯半导体有限公司 | The cutting technique of wafer and the production method of wafer |
| CN106800272A (en) * | 2017-02-17 | 2017-06-06 | 烟台睿创微纳技术股份有限公司 | A kind of MEMS wafer cutting and wafer scale release and method of testing |
| CN106653690A (en) * | 2017-03-03 | 2017-05-10 | 成都中宇微芯科技有限公司 | Multi-dimension chip cutting technology |
| CN107706120A (en) * | 2017-09-28 | 2018-02-16 | 深圳赛意法微电子有限公司 | The method for packing of ultra-thin wafers |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113285352A (en) * | 2021-07-23 | 2021-08-20 | 华芯半导体研究院(北京)有限公司 | Vertical cavity surface emitting laser with sorting protection structure |
| CN113871348A (en) * | 2021-09-27 | 2021-12-31 | 东莞市译码半导体有限公司 | Novel laser cutting process technology |
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Application publication date: 20181228 |
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